CN105720185A - LED module welded with semiconductor temperature difference power generation chips - Google Patents
LED module welded with semiconductor temperature difference power generation chips Download PDFInfo
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- CN105720185A CN105720185A CN201610238977.6A CN201610238977A CN105720185A CN 105720185 A CN105720185 A CN 105720185A CN 201610238977 A CN201610238977 A CN 201610238977A CN 105720185 A CN105720185 A CN 105720185A
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- welded
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- semiconductor temperature
- led
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000010248 power generation Methods 0.000 title abstract 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 238000005507 spraying Methods 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 230000005855 radiation Effects 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 4
- 230000000191 radiation effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 10
- 238000001816 cooling Methods 0.000 description 6
- 238000007751 thermal spraying Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004134 energy conservation Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000005678 Seebeck effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/645—Heat extraction or cooling elements the elements being electrically controlled, e.g. Peltier elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses an LED module welded with semiconductor temperature difference power generation chips. The LED module comprises LEDs and the semiconductor temperature difference power generation chips; the surface of one end of each temperature difference power generation chip is equipped with a circuit layer; the LEDs are welded on the circuit layers; the exposed end of the temperature difference power generation chip located at the most outer side is equipped with a metal layer; a heat radiation device is welded on the metal layer; and metal layers are produced on the surfaces of the semiconductor temperature difference power generation chips. According to the LED module, the conventional aluminum substrate structure is cancelled; the substrate is replaced by the temperature difference power generation chips; the structure and the production process are further simplified; the material cost is reduced; the production efficiency is effectively improved; multiple temperature difference power generation chips are mutually welded; therefore, the surplus heat energy generated by the LED can be utilized more efficiently; the heat is radiated; moreover, the heat energy is converted into electric energy; the electric energy is fed back to a drive power supply or an active heat radiation device, thus driving the LEDs to emit light or driving the heat radiation structure to work; and the heat radiation effect is improved.
Description
Technical field
The present invention relates to a kind of semiconductor temperature differential generating chip end surface and be provided with line layer, LED is welded on line layer, bared end at outermost thermo-electric generation chip is welded with heat abstractor and dispels the heat, and thermo-electric generation chip utilizes the LED module of the thermo-electric generation that LED heat amount produces.
Background technology
Light emitting diode (LED) is as novel light emitting semiconductor device, and in the work process with electroluminescent light, only smaller part of energy is converted into electric energy, and other major part electric energy convert for heat energy.If these heat energy can not effectively conduction dispelling the heat from LED chip, it will cause the problems such as the optical attenuation of LED and color waft or even irreversible damage.Therefore, in the application of LED light source, it is necessary to consider how that the heat quickly produced by LED light source is derived, dispelled the heat by heat abstractor, it is ensured that LED is the stability of duty under various working environments.
When LED heat amount distributes, from the angle of heat energy utilization, consider it is recycled, especially with semiconductor temperature differential generating sheet devices, by semi-conductor thermoelectric device, heat energy being converted to the supply unit of electric energy, it adopts unique thin film technique processing and manufacturing to form according to Seebeck effect principle, thermo-electric generation is produced, thus the recovery carrying out heat energy re-uses by contacting with the LED thermal source produced.
In the prior art, it has been disclosed that have and adopt heat pipe, semiconductor chilling plate or adopt the technical scheme of the multiple heat radiation such as cooling piece and heat pipe combination simultaneously.Such as, at a kind of LED encapsulated for support with semiconductor chilling plate that notification number is CN102810620A, it is characterized in that including semiconductor refrigerating plate rack and be packaged in the LED chip of the cold end outer surface of semiconductor refrigerating support, the described cold end of semiconductor refrigerating support is heat conductive insulating plate and its outer surface is printed with the printed circuit forming binding post for being electrically connected to LED chip.
In above-mentioned patent, LED chip is fixed on the cold end of cooling piece, is personnel's replacing it is contemplated that and the technological means practiced by baseplate material of LED encapsulation field.Although the program can effectively ensure that LED chip and is in normal working temperature, but not having the design of radiator structure, if merely by cooling piece work cooling, working long hours and will increase energy consumption undoubtedly, the characteristic energy-conservation with LED is consistent.If employing heat pipe structure, also only increase thermal convective efficiency, it is impossible to carry out reclaiming generating recycling to the LED heat produced, thus an enterprising step carries out energy saving optimizing on the basis that LED is energy-conservation.Outside removing radiator structure, being directly encapsulated into the cold end of cooling piece, if not arranging electrical connection between the cold end of chip and cooling piece, being also not easy to LED chip is driven luminescence.
Summary of the invention
The present invention is directed to above-mentioned deficiency, it is provided that a kind of LED module utilizing thermo-electric generation chip that LED is dispelled the heat and LED heat amount is reclaimed.
To achieve these goals, the technical solution used in the present invention is: a kind of LED module being welded with semiconductor temperature differential generating chip, include LED, semiconductor temperature differential generating chip, it is characterized in that, the end surface of described thermo-electric generation chip is provided with line layer, LED is welded on described line layer, and the exposed junction of outermost thermo-electric generation chip is provided with metal level, is welded with heat abstractor on the metal layer.
Described line layer is directly produced on one end of thermo-electric generation chip.
The surface of described semiconductor temperature differential generating chip makes metal level.
The production method of described semiconductor temperature differential generating chip surface metal level is plating, printing, compound or spraying.
Line layer is to be welded on the metal level of thermo-electric generation chip one end by wiring board to realize.
Described line layer at least includes solderable position and electrical connection distribution.
Described thermo-electric generation chip be a piece of and more than, the welding of contact surface each other.
Described heat abstractor is active heat removal or passively dispels the heat.
The described electrical connection between thermo-electric generation chip is series connection and/or parallel connection.
Described LED is LED chip, LED single-chip light source or multi-chip integrated (COB) light source.
Beneficial effects of the present invention:
Present invention eliminates traditional aluminum substrate structure, thermo-electric generation chip directly replace substrate, not only further simplify structure and production process, reduce material cost, it is also possible to be effectively improved production efficiency.
The thermo-electric generation chip adopting multi-disc is welded to each other, can more efficiently utilize the LED waste heat produced, while heat radiation, by converting heat to back electrical energy to driving in power supply or active heat removal, drive LED luminous or drive radiator structure work, improving radiating effect.
By making the indirect welding that the form of metal level realizes between thermo-electric generation chip and radiator structure, the thermal resistance that traditional mechanical contact, bonding etc. produce can be reduced to greatest extent, not only contribute to the transmission of LED light source heat, more can improve the efficiency that LED heat amount reclaims.In actual production process, welding can be realized by modes such as Reflow Solderings, and not only production technology is simple, is suitable for the large-scale production of mass, and is favorably improved production efficiency, reduces cost.
The present invention is as an independent LED luminescence radiating module, in application process, not by the impact of heat radiation volume, shape, it is possible to being used in alone or in combination in the various light fixtures such as street lamp, Tunnel Lamp, Down lamp, shot-light, application is wide, good market prospects.
Accompanying drawing explanation
Fig. 1 is the generalized section of a preferred embodiment of the present invention；
Fig. 2 is the generalized section of another preferred embodiment of the present invention.
Detailed description of the invention
As it is shown in figure 1, this preferred embodiment is mainly made up of parts such as LED light source 1, wiring board 2, radiator 3, lens 4, thermo-electric generation chip 5, the first metal layer the 6, second metal level 7, the 3rd metal levels 8.Wherein, the cold end surface thermal jet at thermo-electric generation chip 5 scribbles the first metal layer 6, and wiring board 2 directly welds the surface of the first metal layer 6, thus realizing the end surface at thermo-electric generation chip 5 to arrange a line layer.Welding position and electrical connection distribution it is respectively arranged with on the surface of line layer i.e. wiring board 2, LED light source 1 is directly welded on the solderable position of wiring board 2, and the pin passed through on LED light source 1 support is connected with electrical connection distribution, to realize being connected with other light sources or direct and driving power supply connection.It is fixedly arranged above lens 4 at LED light source 1, LED light source 1 is carried out luminous intensity distribution, to reach to design desired hot spot and effect.
In the present embodiment, thermo-electric generation chip 5 includes two panels, upper and lower two panels superposition, its quantity be a piece of or a piece of more than, size and thickness can be adjusted as desired by calculating.They thermal jets respectively of contact surface each other scribble the second metal level 7, and are welded to one another, and the electrical connection between semiconductor temperature differential generating chip is for for connecting and/or in parallel.Wherein, scribble the 3rd metal level 8 in outermost thermo-electric generation chip bared end thermal jet, the 3rd metal level 8 is welded with heat abstractor, i.e. radiator 3.The manufacturer of semiconductor temperature differential generating chip: such as Jaingxi Namike Thermoelectricity Electronics Co., Ltd., ChangShan WanGu Electronic techonlogy Co., Ltd. etc..
The production method of semiconductor temperature differential generating chip surface the second metal level 7 can be plating, printing, compound or spraying, by actual tests and contrast, the mode adopting thermal spraying can better adapt to the application of LED field, there is good weld strength and durability degree, it is suitable for mass production, it is thus preferred to thermal spraying mode.
The operation principle of this enforcement is mainly LED light source 1 and produces heat, pass to the first metal layer 6 and one end of thermo-electric generation chip 5, generation thermo-electric generation exports, heat is transmitted to lower thermo-electric generation chip simultaneously, and produce thermo-electric generation output, by that analogy, can generate electricity by multilamellar connection thermo-electric generation chip, finally unnecessary heat is dissipated by heat abstractor, in the process, the electricity of output can be directly fed back to drive power supply, is used for driving LED light source 1 luminous, or driving active heat radiating device, as fan dispels the heat.
Preferred as the present embodiment of LED light source 1, in actual application, LED chip can be directly adopted to carry out the operation such as die bond, bonding wire, form the absolute construction of a LED light source, or adopt the encapsulated LED single-chip light source completed, such as the present embodiment, or adopt multi-chip integrated (COB) light source.
On wiring board 2 except at least including solderable position and electrical connection distribution, it is also possible to be provided with electrostatic discharge protective circuit, one or more in the circuit such as rectification, pressure limiting, electric current control, to meet different function needs.Wiring board 2 material can be the one in FPC, rigid wiring board or Rigid Flex.
In this enforcement arranges, heat abstractor is passive heat radiation, namely adopts radiator 3, preferably employ conventional aluminum alloy material, owing to aluminum alloy materials has high thermal conductivity, at about 230W/mK, and stabilized metal is better, less costly, it is easy to molding by techniques such as aluminium extrusion..
The first metal layer 6, in the process of spraying, welds the thermal spraying position, one end of wiring board 2 for thermo-electric generation chip 5, it is possible to takes local fixed point spraying or all sprays.Adopt whole thermal spraying, it is not necessary to make the auxiliary accessories such as fixture, it is possible to direct spraying operates；Adopt local to pinpoint thermal spraying, relative to whole sprayings, then need to make the fixture of specialty, and control the accuracy of spraying well.In actual application process, the first metal layer 6 spraying position mainly needs according to wiring board 2 are adjusted, and the cold end that need to weld for thermo-electric generation chip chamber or hot junction, such as the second metal level 7 and the 3rd metal level 8, semiconductor temperature differential generating chip surface is all sprayed, thus reducing thermal resistance, make heat transfer more efficient.
The first metal layer 6 is weldable material, is mainly containing one or more in copper, lead, stannum, silver.Above metal material on the one hand, has good solderability, and is prone to processing spraying；Above metal material, itself has higher heat conductivity, good heat conductivity on the other hand.On the considering of performance and cost, it is preferred to use copper-bearing materials carries out thermal spraying.
In carrying out production process, solder preferably employs low temperature tin cream, after carrying out uniformly coating, it is preferred to use warm table and solder reflow device and technique, produces in batches, improve the automaticity in production process and concordance on solder side.
On radiator structure, except the radiator 3 of the present embodiment, it is also possible to adopt one or more combinations in heat pipe, fan, aluminium alloy heat radiator, to meet varying environment and specific heat load requirement.Mode and semiconductor temperature differential generating chip by welding are attached, and its thermal contact resistance can be greatly reduced, and is favorably improved heat conduction efficiency, this production process of another side is simple, it is suitable for the large-scale production of mass, is favorably improved production efficiency, reduce production cost.
As in figure 2 it is shown, be another preferred embodiment of the present invention, mainly it is made up of parts such as LED integrated (COB) light source 9, line layer 2, radiator 3, thermo-electric generation chip the 5, second metal level 7, the 3rd metal levels 8.Wherein, line layer 2 is directly produced on the end surface of thermo-electric generation chip 5, surface is respectively arranged with welding position and electrical connection distribution, COB light source 9 is directly welded on the solderable position of wiring board 2, positive and negative electrode respectively with the welding of electrical connection distribution, to realize being connected with other light sources or direct and driving power supply connection.
The processing technology of conventional aluminum substrate or other emerging combination process it are referred in the line layer 2 manufacture method on thermo-electric generation chip 5 surface.
In this enforcement row, thermo-electric generation chip 5 quantity is two panels, but is not limited to two panels, it is possible to for other multi-sheet structure, in general, thermo-electric generation chip 5 quantity of utilization is more many, and the LED heat amount efficiency of recovery is more high, but the many factors such as space, cost should be considered, select.
Contact surface thermal jet respectively between thermo-electric generation chip 5 and next thermo-electric generation chip scribbles the second metal level 7, the contact surface thermal jet respectively of semiconductor temperature differential generating chip and radiator 3 scribbles the 3rd metal level 8, they weld each other by solder, and the heat forming low thermal resistance efficiently transmits.
Embodiment described above, the simply present invention more preferably detailed description of the invention, the usual variations and alternatives that those skilled in the art carries out within the scope of technical scheme should be construed as being included in protection scope of the present invention.
Claims (10)
1. it is welded with the LED module of semiconductor temperature differential generating chip, include LED, semiconductor temperature differential generating chip, it is characterized in that, the end surface of described thermo-electric generation chip is provided with line layer, LED is welded on described line layer, the exposed junction of outermost thermo-electric generation chip is provided with metal level, is welded with heat abstractor on the metal layer.
2. it is welded with the LED module of semiconductor temperature differential generating chip according to claim 1, it is characterised in that described line layer is directly produced on one end of thermo-electric generation chip.
3. it is welded with the LED module of semiconductor temperature differential generating chip according to claim 1, it is characterised in that the surface of described semiconductor temperature differential generating chip makes metal level.
4. it is welded with the LED module of semiconductor temperature differential generating chip according to claim 3, it is characterised in that
The production method of described semiconductor temperature differential generating chip surface metal level is plating, printing, compound or spraying.
5. it is welded with the LED module of semiconductor temperature differential generating chip according to claim 4, it is characterised in that line layer is to be welded on the metal level of thermo-electric generation chip one end by wiring board to realize.
6. according to claim 2 or 5, it is welded with the LED module of semiconductor temperature differential generating chip, it is characterised in that described line layer at least includes solderable position and electrical connection distribution.
7. be welded with the LED module of semiconductor temperature differential generating chip according to claim 6, it is characterised in that described thermo-electric generation chip be a piece of and more than, the welding of contact surface each other.
8. according to claim 6 or 7, it is welded with the LED module of semiconductor temperature differential generating chip, it is characterised in that described heat abstractor is active heat removal or passively dispels the heat.
9. according to claim 6 or 7, it is welded with the LED module of semiconductor temperature differential generating chip, it is characterised in that the described electrical connection between thermo-electric generation chip is series connection and/or parallel connection.
10. it is welded with the LED module of semiconductor temperature differential generating chip according to claim 8, it is characterised in that described LED is LED chip, LED single-chip light source or multi-chip integrated (COB) light source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610238977.6A CN105720185A (en) | 2016-04-16 | 2016-04-16 | LED module welded with semiconductor temperature difference power generation chips |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610238977.6A CN105720185A (en) | 2016-04-16 | 2016-04-16 | LED module welded with semiconductor temperature difference power generation chips |
Publications (1)
| Publication Number | Publication Date |
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| CN105720185A true CN105720185A (en) | 2016-06-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610238977.6A Pending CN105720185A (en) | 2016-04-16 | 2016-04-16 | LED module welded with semiconductor temperature difference power generation chips |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106382602A (en) * | 2016-10-22 | 2017-02-08 | 浙江聚珖科技股份有限公司 | Light fixture for generating power through photovoltaic temperature difference waste heat |
| CN114129905A (en) * | 2021-12-08 | 2022-03-04 | 固安翌光科技有限公司 | Thermoelectric power generation heat dissipation module, phototherapy device comprising thermoelectric power generation heat dissipation module and phototherapy method |
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| CN202308056U (en) * | 2011-11-14 | 2012-07-04 | 李承恩 | High-power light emitting diode (LED) heat radiation structure |
| CN204300956U (en) * | 2014-12-17 | 2015-04-29 | 五邑大学 | The energy-conservation light compensating apparatus that adds lustre to of LED based on thermo-electric generation effect |
| CN206116458U (en) * | 2016-04-16 | 2017-04-19 | 浙江聚珖科技股份有限公司 | Welding has LED module of semiconductor thermoelectric generation chip |
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2016
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Patent Citations (5)
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| KR100923509B1 (en) * | 2008-12-23 | 2009-10-27 | 에이스텍 주식회사 | Self-generated lighting device and street light for using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106382602A (en) * | 2016-10-22 | 2017-02-08 | 浙江聚珖科技股份有限公司 | Light fixture for generating power through photovoltaic temperature difference waste heat |
| CN114129905A (en) * | 2021-12-08 | 2022-03-04 | 固安翌光科技有限公司 | Thermoelectric power generation heat dissipation module, phototherapy device comprising thermoelectric power generation heat dissipation module and phototherapy method |
| CN114129905B (en) * | 2021-12-08 | 2024-03-26 | 固安翌光科技有限公司 | Phototherapy device |
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Application publication date: 20160629 |
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