CN105720126B - A kind of upside-down mounting four-junction solar cell structure and preparation method thereof - Google Patents
A kind of upside-down mounting four-junction solar cell structure and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 44
- 230000012010 growth Effects 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 claims abstract description 22
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 20
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims description 19
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 238000000926 separation method Methods 0.000 claims description 11
- 230000007773 growth pattern Effects 0.000 claims description 4
- 238000000407 epitaxy Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 229910020328 SiSn Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000026267 regulation of growth Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The present invention discloses a kind of upside-down mounting four-junction solar cell structure and preparation method thereof, and the sub- batteries of GaInP and the sub- batteries of GaAs are sequentially formed on gaas substrates first with MOCVD or MBE, then recycles the UHVCVD growth sub- batteries of SiGeSn and the sub- batteries of SiGe.This battery structure has good currents match and Lattice Matching, can obtain high crystal mass and battery efficiency.
Description
Technical field
The present invention relates to efficient upside-down mounting four-junction solar cell structure of a kind of Lattice Matching and preparation method thereof, belong to chemical combination
The epitaxial growth of thing semiconductor solar cell and device preparation field.
Background technology
Due to the environmental degradation petered out and its constantly caused of the non-renewable energy resources such as coal, oil, the mankind compel to be essential
The huge problem for using green energy resource to solve to face by people.Solar energy is inexhaustible because of its safety and environmental protection, with it not
Exhaust, but it is ubiquitous, it is a kind of very good green regenerative energy sources, it is got most of the attention.Based compound semiconductor material
The third generation compound semiconductor multijunction solar cell of material is a kind of solar cell of conversion efficiency highest, while having resistance to
High-temperature behavior, capability of resistance to radiation are strong, good temp characteristic the advantages of.More to make full use of solar spectral, further improve too
The photoelectric transformation efficiency of positive energy battery, increases by the sub- batteries of knot 1.0eV, as numerous on the basis of conventional three-joint solar cell
One of selection.Such as the InGaAs selected in Chinese patent literature CN201010193582.1, this sub- battery with backing material because depositing
In larger lattice mismatch, fault in material is more.
The content of the invention
In view of the above-mentioned problems, the present invention provides a kind of upside-down mounting four-junction solar cell structure and preparation method thereof, its simultaneous
MOCVD and UHVCVD（Ultrahigh vacuum CVD）, using son electricity of the SiGeSn materials matched with GaAs substrate lattices as 1.0eV
Pond, can be effectively improved the problem of crystalline quality of material is poor, improve battery conversion efficiency.
According to the first aspect of the invention, a kind of preparation method of upside-down mounting four-junction solar cell：First with MOCVD
Or MBE sequentially forms the sub- batteries of GaInP and the sub- batteries of GaAs on gaas substrates, UHVCVD growths SiGeSn is then recycled
The sub- sub- battery of battery and SiGe.This battery structure has good currents match and Lattice Matching, can obtain high crystal matter
The battery efficiency of amount and superelevation.
It is preferred that, the sub- batteries of GaInP and the sub- batteries of GaAs and transfer are sequentially formed using MOCVD on gaas substrates first
Separation layer, then the sub- batteries of SiGeSn and the sub- batteries of SiGe are grown using UHVCVD.
It is preferred that, the transfer insolated layer materials are GaAs, and thickness is more than or equal to 200nm.
According to the second aspect of the invention, a kind of preparation method of upside-down mounting four-junction solar cell, including step：（1）
In MOCVD reaction chambers, in upside-down mounting growth etch stop layers, ohmic contact layer, the first sub- battery, the successively on a GaAs substrates
One tunnel junctions, the second sub- battery, the second tunnel junctions and transfer separation layer；（2）Above-mentioned sample is transferred in UHVCVD reaction chambers,
Surface heat-treatent is carried out to sample；（3）The sub- battery of growth regulation three successively in UHVCVD reaction chambers, the 3rd tunnel junctions, the 4th son
Battery and ohmic contact layer.
It is preferred that, the first sub- battery is the sub- batteries of GaInP, and the second sub- battery is the sub- batteries of GaAs.
It is preferred that, the 3rd sub- battery is the sub- batteries of SiGeSn, and the 4th sub- battery is the sub- batteries of SiGe.
It is preferred that, the 3rd tunnel junctions, the 4th sub- battery and Ohmic contact layer growth temperature are not higher than the 3rd sub- battery
Growth temperature, prevents the 3rd sub- battery is heated from easily separating out or decomposing.
It is preferred that, the step（2）In, first by step 1）The structure of completion is put into a cassette of substrates and sealed, the mistake
Journey is completed in glove box, and the MOCVD reaction chambers and the glove box are connected by a vacuum transmiting chamber, then by above-mentioned sample
It is transferred in UHVCVD reaction chambers.
It is preferred that, the transfer insolated layer materials are GaAs, and thickness is more than or equal to 200nm, is easy to obtaining
UHVCVD carries out the structure of the secondary epitaxy growth of battery.
According to the third aspect of the present invention, a kind of upside-down mounting four-junction solar cell, including：GaAs substrates；First son electricity
Pond, the second sub- battery and transfer separation layer, using MOCVD or MBE growth pattern be sequentially formed in the GaAs substrates it
On；3rd sub- battery and the 4th sub- battery, are sequentially formed on the transfer separation layer using UHVCVD growth pattern.
It is preferred that, the base material of the 3rd sub- battery is made up of band gap for 1.0eV SiGeSn materials, lattice constant with
GaAs is matched, wherein Si components 25% ~ 33%, Ge components 59% ~ 68%, Sn components 6% ~ 8%.
It is preferred that, the 4th sub- battery is the sub- batteries of SiGe.
It is preferred that, the first sub- battery, the second sub- battery, the band gap of the 3rd sub- battery and the 4th sub- battery is reduced successively, respectively
Sub- battery current matching, each sub- battery lattice constant is matched with GaAs substrates.
It is preferred that, the transfer insolated layer materials are GaAs, and thickness is more than 200nm, are easy to carry out in UHVCVD to obtain
The structure of the erc epitaxial growths of battery.
In addition, using upside-down mounting growth structure, i.e., first grow III-V battery structure in MOCVD, then by its turn
Move in UHVCVD, it is possible to prevente effectively from formal dress growth course, the SiGeSn first grown easily separates out Sn and dirty at high temperature
Contaminate MOCVD inferior position.
Relative to InGaAs materials, this patent, as the sub- batteries of 1.0eV, is entered using SiGeSn together with other three junction batteries
Row upside-down mounting grows, on the one hand, its lattice constant can accomplish to match with GaAs backing materials, can obtain high crystal mass,
In addition, Mr.'s growth of III-V binode battery is growing the sub- batteries of SiGeSn it is possible to prevente effectively from SiGeSn are electric caused by high temperature
Sn in pond is separated out at high temperature, should not first grow SiGeSn, then grows the sub- batteries of III-V by MOCVD, on the other hand, is fallen
It is possible to prevente effectively from the antiphase domain that III-V material is introduced when being grown on IV races material, is reduced in non-radiative recombination during dress growth
The heart, improves the conversion efficiency of battery.
Brief description of the drawings
Fig. 1 be the present invention relates to a kind of Lattice Matching efficient four-node solar battery structure schematic diagram.
In figure：
001 ：Growth substrates
002 ：Etch stop layers
003 ：Ohmic contact layer
101 ：First sub- battery Window layer
102 ：First sub- battery launch site
103 ：First sub- battery base
104 ：First sub- cell back field layer
501 ：First tunnel junctions
201 ：Second sub- battery Window layer
202 ：Second sub- battery launch site
203 ：Second sub- battery base
204 ：Second sub- cell back field layer
502 ：Second battery tunnel junctions
004 ：Shift separation layer
301 ：3rd sub- battery Window layer
302 ：3rd sub- battery launch site
303 ：3rd sub- battery base
304 ：3rd sub- cell back field layer
503 ：3rd tunnel junctions
401 ：4th sub- battery Window layer
402 ：4th sub- battery launch site
403 ：4th sub- battery base
404 ：4th sub- cell back field layer
005 ：Ohmic contact layer.
Embodiment
With reference to schematic diagram, the invention will be further described, but should not be limited the scope of the invention with this.
Example below discloses a kind of high efficiency four-junction solar cell, and its preparation mainly comprises the following steps：First
The first sub- battery and the second sub- battery are sequentially formed on gaas substrates using MOCVD or MBE, then recycle UHVCVD lifes
Long 3rd sub- battery and the 4th sub- battery.Under sign an undertaking the high efficiency four-junction solar cell for closing specific preparation method to this implementation
It is described in detail.
Step（1）：In MOCVD, adulterated from n-type, the GaAs substrates in 9 ° of [111] direction of deviation are served as a contrast as epitaxial growth
Bottom 001, thereon, epitaxial growth GaInP sacrifices cutoff layer 002 and n-GaAs ohmic contact layers 003 successively.Wherein, growth substrates
350 μm or so of 001 thickness, doping concentration is 1 × 1018cm-3 ~ 4×1018cm-3Between, GaInP sacrifices cutoff layer 002
Thickness is 200nm, doping 1 × 1018cm-3, the thickness of n-GaAs ohmic contact layers 003 is 500nm, doping 5 × 1018cm-3。
Step（2）：The sub- batteries of GaInP first are grown on n-GaAs ohmic contact layers 003, band gap is 1.9eV, its each layer
Lattice constant is matched with GaAs substrates.Specifically, first growing n-AlInP Window layers 101, thickness is 0.03 μm, doping concentration about 7
×1018cm-3, n-GaInP launch sites 102 are then grown, thickness is about 0.1 μm, and doping concentration is about 1 × 1018cm-3, Ran Housheng
Long p-GaInP bases 103, thickness is about 1.5 μm, and doping concentration is about 2 × 1017cm-3, finally grow p-AlGaAs back surface field layers
104, thickness is about 0.07 μm, and doping concentration is about 2 × 1018cm-3。
Step（3）：P++-AlGaAs/n++-GaInP tunnel junctions 501 are grown on the sub- batteries of GaInP first.Specifically,
First grow p++-AlGaAs layers, thickness 20nm, doping concentration 2 × 1020cm-3, n++-GaInP layers of regrowth, thickness 20nm mixes
Miscellaneous concentration 2 × 1019cm-3。
Step（4）：The sub- batteries of GaAs second are grown in p++-AlGaAs/n++-GaInP tunnel junctions 501, band gap is
1.42eV, its each layer lattice constant is matched with GaAs substrates.Specifically, first growing n-AlInP Window layers 201, thickness is 0.05 μ
M, doping concentration about 5 × 1018cm-3, n-GaAs launch sites 202 then being grown, thickness is about 0.2 μm, doping concentration is about 5 ×
1017cm-3, p-GaAs bases 203 are then grown, thickness is about 3.0 μm, and doping concentration is about 8 × 1016cm-3, finally grow p-
AlGaAs back surface field layers 204, thickness is about 0.07 μm, and doping concentration is about 1 × 1018cm-3。
Step（5）：P++-GaAs/n++-GaAs tunnel knots 502 are grown on the sub- batteries of GaAs second, p++- is first grown
GaAs layers, thickness 20nm, doping concentration 2 × 1020cm-3, n++-GaAs layers of regrowth, thickness 20nm, doping concentration 3 ×
1019cm-3。
Step（6）：GaAs transfer separation layers 004 are grown in p++-GaAs/n++-GaAs tunnel junctions 502, thickness is more than
Or equal to 200nm, preferred values is 0.5 μm, doping concentration is 2 × 1018cm-3, so far complete the epitaxial growth in MOCVD.
Step（7）：The structure of above-mentioned completion, which is put into cassette of substrates, to be sealed, and the process is completed in glove box, MOCVD
Reaction chamber and glove box are connected by a vacuum transmiting chamber；And the sample of above-mentioned good seal is transferred in UHVCVD reaction chambers,
10 ~ 20min of Surface heat-treatent is carried out to sample, treatment temperature is consistent with above-mentioned transfer separation layer growth temperature in MOCVD.
Step（8）：Continue epitaxial growth in UHVCVD reaction chambers, grown in GaAs cushions tunnel junctions 004
SiGeSn materials are constituted, and band gap is 1.0eV, wherein Si components 25% ~ 33%, Ge components 59% ~ 68%, Sn components 6% ~ 8%, its each layer
Lattice constant is matched with GaAs substrates, and growth temperature is 550 DEG C.In a preferred embodiment, n-SiSn Window layers are first grown
301, thickness is 0.05 μm, doping concentration about 5 × 1018cm-3, then grow n- Si0.28Ge0.654Sn0.066Launch site 302, it is thick
About 0.2 μm of degree, doping concentration is about 5 × 1017cm-3, then grow p- Si0.28Ge0.654Sn0.066Base 303, thickness is about
4.0 μm, doping concentration is about 1 × 1017cm-3, p-SiSn back surface field layers 304 are finally grown, thickness is about 0.07 μm, doping concentration
About 3 × 1018cm-3。
Step（9）：P++-SiGeSn/n++-SiGe tunnel knots 503, growth temperature are grown on the sub- batteries of SiGeSn the 3rd
Spend for 480 DEG C, first grow SiGeSn layers of p++-, thickness 20nm, doping concentration 5 × 1019cm-3, n++-SiGe layers of regrowth,
Thickness 20nm, doping concentration 5 × 1019cm-3。
Step（10）：The sub- batteries of SiGe the 4th, growth temperature are grown in p++-SiGeSn/n++-SiGe tunnel junctions 503
For 520 DEG C, band gap is 0.7eV, and its each layer lattice constant is matched with GaAs substrates.First grow n-SiGeSn Window layers 401, thickness
For 0.1 μm, doping concentration about 5 × 1018cm-3, n-SiGe launch sites 402 are then grown, thickness is about 0.2 μm, and doping concentration is about
For 5 × 1017cm-3, p-SiGe bases 403 are then grown, thickness is about 5.0 μm, and doping concentration is about 1 × 1017cm-3, finally give birth to
Long p-SiGeSn back surface field layers 404, thickness is about 0.1 μm, and doping concentration is about 3 × 1018cm-3。
Step（11）：SiGe cap rocks 005 are grown on the sub- batteries of SiGe the 4th, growth temperature is 520 DEG C, and thickness is about
0.5 μm, doping concentration is about 5 × 1018cm-3, battery structure epitaxial growth is completed, as shown in Figure 1.
Claims (12)
1. a kind of preparation method of upside-down mounting four-junction solar cell, it is characterised in that：First with MOCVD or MBE in GaAs
The sub- batteries of GaInP and the sub- batteries of GaAs are sequentially formed on substrate, the UHVCVD growth sub- batteries of SiGeSn and SiGe is then recycled
Sub- battery.
2. a kind of preparation method of upside-down mounting four-junction solar cell according to claim 1, it is characterised in that：Use first
MOCVD sequentially forms the sub- batteries of GaInP and the sub- batteries of GaAs and transfer separation layer on gaas substrates, then using UHVCVD growths
The sub- batteries of SiGeSn and the sub- batteries of SiGe.
3. a kind of preparation method of upside-down mounting four-junction solar cell, including step：
（1）In MOCVD reaction chambers, in upside-down mounting grows etch stop layers, ohmic contact layer, the first son successively on a GaAs substrates
Battery, the first tunnel junctions, the second sub- battery, the second tunnel junctions and transfer separation layer；（2）Above-mentioned sample is transferred to UHVCVD anti-
Answer in chamber, Surface heat-treatent is carried out to sample；
（3）Grow the sub- batteries of SiGeSn the 3rd successively in UHVCVD reaction chambers, the 3rd tunnel junctions, the 4th sub- battery and ohm connects
Contact layer.
4. the preparation method of the upside-down mounting four-junction solar cell according to claims 3, it is characterised in that：First sub- battery
For the sub- batteries of GaInP, the second sub- battery is the sub- batteries of GaAs.
5. the preparation method of the upside-down mounting four-junction solar cell according to claims 3, it is characterised in that：4th son
Battery is the sub- batteries of SiGe.
6. the preparation method of the upside-down mounting four-junction solar cell according to claims 3, it is characterised in that：3rd tunnel
Wear knot, the 4th sub- battery and Ohmic contact layer growth temperature and be not higher than the 3rd sub- battery growth temperature, prevent the 3rd sub- battery by
It is hot easily to separate out or decompose.
7. the preparation method of the upside-down mounting four-junction solar cell according to claims 3, it is characterised in that：The step
（2）In, first by step 1）The structure of completion is put into a cassette of substrates and sealed, and the process is completed in glove box, described
MOCVD reaction chambers and the glove box are connected by a vacuum transmiting chamber, then above-mentioned sample is transferred in UHVCVD reaction chambers.
8. the preparation method of the upside-down mounting four-junction solar cell according to claims 3, it is characterised in that：It is described transfer every
Layer material is GaAs, and thickness is more than or equal to 200nm, is easy to carry out the secondary epitaxy growth of battery in UHVCVD to obtain
Structure.
9. a kind of upside-down mounting four-junction solar cell, including：
GaAs substrates；
First sub- battery, the second sub- battery and transfer separation layer, institute is sequentially formed in using MOCVD or MBE growth pattern
State GaAs substrates；
3rd sub- battery and the 4th sub- battery, are sequentially formed on the transfer separation layer using UHVCVD growth pattern,
The 3rd sub- battery is the sub- batteries of SiGeSn.
10. a kind of upside-down mounting four-junction solar cell according to claims 9, it is characterised in that：The base of 3rd sub- battery
Area's material is made up of band gap for 1.0eV SiGeSn materials, and lattice constant is matched with GaAs, wherein Si components 25% ~ 33%, Ge groups
Divide 59% ~ 68%, Sn components 6% ~ 8%.
11. a kind of upside-down mounting four-junction solar cell according to claims 9, it is characterised in that：The 4th sub- battery
For the sub- batteries of SiGe.
12. a kind of upside-down mounting four-junction solar cell according to claims 9, it is characterised in that：First sub- battery, second
The band gap of sub- battery, the 3rd sub- battery and the 4th sub- battery is reduced successively, each sub- battery current matching, each sub- battery lattice constant
Matched with GaAs substrates.
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| CN201610267703.XA CN105720126B (en) | 2016-04-27 | 2016-04-27 | A kind of upside-down mounting four-junction solar cell structure and preparation method thereof |
| PCT/CN2016/111669 WO2017185774A1 (en) | 2016-04-27 | 2016-12-23 | Flip four-junction solar cell structure and preparation method therefor |
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| CN201610267703.XA CN105720126B (en) | 2016-04-27 | 2016-04-27 | A kind of upside-down mounting four-junction solar cell structure and preparation method thereof |
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| US10069026B2 (en) * | 2005-12-19 | 2018-09-04 | The Boeing Company | Reduced band gap absorber for solar cells |
| TW201138130A (en) * | 2010-04-23 | 2011-11-01 | Solapoint Corp | Multi-junction solar cell strucrure |
| US20140345679A1 (en) * | 2011-08-29 | 2014-11-27 | Iqe Plc. | Multijunction photovoltaic device having sige(sn) and gaasnsb cells |
| CN102790117B (en) * | 2012-07-19 | 2016-04-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaInP/GaAs/InGaNAs/Ge four-junction solar cell and preparation method thereof |
| US9997659B2 (en) * | 2012-09-14 | 2018-06-12 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
| US20140137930A1 (en) * | 2012-11-16 | 2014-05-22 | Solar Junction Corporation | Multijunction solar cells |
| CN103151413B (en) * | 2013-03-22 | 2016-01-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Upside-down mounting four-junction solar battery and preparation method thereof |
| CN103594551B (en) * | 2013-10-17 | 2015-10-28 | 中国电子科技集团公司第四十八研究所 | Silica-based gallium arsenide epitaxy material and device fabrication equipment and manufacture method |
| CN105390566B (en) * | 2014-09-03 | 2017-07-18 | 新疆中兴能源有限公司 | A kind of upside-down mounting solar battery chip manufacture method |
| CN104659158A (en) * | 2015-03-16 | 2015-05-27 | 天津三安光电有限公司 | Inverted multi-junction solar cell and manufacturing method thereof |
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| WO2017185774A1 (en) | 2017-11-02 |
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