CN105716735A - Temperature sensor - Google Patents
Temperature sensor Download PDFInfo
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- CN105716735A CN105716735A CN201410740115.4A CN201410740115A CN105716735A CN 105716735 A CN105716735 A CN 105716735A CN 201410740115 A CN201410740115 A CN 201410740115A CN 105716735 A CN105716735 A CN 105716735A
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Abstract
The invention relates to a temperature sensor, comprising a substrate (1), a platinum resistor (2) arranged on the substrate (1), a protection layer (4) covering the platinum resistor (2), and a covering layer (5) covering the protection layer (4), wherein the covering layer (5) comprises Al2O3 and SiO2. According to the invention, the covering layer (5) also comprises Y2O3.
Description
Technical field
The present invention relates to temperature sensor.
Background technology
The basis of the temperature sensor of the feature that the temperature sensor of the present invention is listed in the preamble with claim 1 is made.From US6,617,956B1 and US7,233,226B2 it is known that such temperature sensor.
US6,617,956B1 and US7,233,226B2 disclose the temperature sensor including platinum resistance, and wherein platinum resistance is arranged on substrate and by Al2O3Protection ceramic layer cover.Thin protective layer is by Al2O3, MgO and SiO2Mixture cover layer cover.Known temperature sensor is only capable of under being up to 1000 DEG C of temperature and uses, and shows obvious resistance drift after extension use at such high temperatures.
Summary of the invention
It is an object of the invention to improve the temperature tolerance of temperature sensor and reduce resistance drift.Temperature sensor according to claim 1 solves this problem.The further beneficial effect of the present invention comes from dependent claims.
Durothermic raising is realized by temperature below sensor, and this temperature sensor includes: substrate, the platinum resistance being arranged on substrate, cover the protective layer of platinum resistance, and the cover layer of protective mulch, wherein cover layer comprises Al2O3、SiO2, and Y2O3.By adding Y2O3To Al2O3And SiO2, it is possible to provide make layer spread the cover layer significantly reduced.Therefore, cover layer is less prone to form pore and can provide the positive sealing bearing higher temperature.And, layer diffusion reduces and means to stop at higher temperatures contact between cover layer and the material of platinum resistance and therefore reduce resistance drift.
Less amount of Y2O3It is enough to improve and mainly comprises Al2O3And SiO2The thermostability of layer.Such as, cover layer can comprise the Y of 5% or more weight2O3.In the modified embodiment of the present invention, cover layer can comprise the Y of 10% or more weight2O3。Y2O3Concentration increased to over 30% weight can't be obviously improved cover layer and be likely to uneconomical.One advantageous embodiment of the present invention is the Y that cover layer comprises less than 20% weight2O3。
Another advantageous embodiment of the present invention is Al in cover layer2O3And SiO2Weight add up and be at least 50%, for instance weight is 60% or more.
Another advantageous embodiment of the present invention is the SiO comprised in cover layer2Weight more than Al2O3Weight.Such as, cover layer can comprise weight is Al2O3The twice of weight or more SiO2。
Another advantageous embodiment of the present invention is the Y comprised in cover layer2O3Weight less than Al2O3Weight.Such as, another advantageous embodiment of the present invention is that cover layer can comprise weight more than Y2O3The SiO of weight2。
Preferably, cover layer comprises the SiO of at least 30% weight2, for instance 40% or the SiO of more weight2。SiO2Content be generally not favourable more than 70%.
Preferably, cover layer comprises the Al of at least 15% weight2O3, for instance 20% or more weight.Al2O3Content be generally not favourable more than 30%.
Cover layer also can comprise can up to the B of such as 25% weight2O3Deng.Such as, in one embodiment of the invention, cover layer can comprise the B of 1% to 20% weight2O3.Cover layer also can comprise other supplementary element, particularly except SiO2、Al2O3、Y2O3And B2O3Outside other oxides.Being likely in embodiment in the one of the present invention, the content of any other supplementary element amounts to and is smaller than the 20% of gross weight, for instance less than the 10% of gross weight.
Accompanying drawing explanation
Below with reference to the accompanying drawings embodiment of the present invention is further described.
Fig. 1 illustrates the schematic sectional view of temperature sensor.
Reference number:
1 substrate, 2 platinum resistance, 3 metal wires, 4 protective layers, 5 cover layers, 6 extra plays, 7 glass ceramics.
Detailed description of the invention
Temperature sensor shown in Fig. 1 includes substrate 1, for instance alumina substrate.Platinum resistance 2 is arranged on substrate 1, and platinum resistance 2 is connectable to metal wire 3.Platinum resistance 2 is resistive layer and the alloy by any platinum or based on platinum is made.The protective layer 4 of such as ceramic layer covers platinum resistance 2.Protective layer 4 can be made up of aluminium oxide or other ceramic materials.Cover layer 5 is arranged in the top of protective layer 4.Another extra play 6 of such as glaze layer can cover cover layer 5.The join domain of metal wire 3 and platinum resistance 2 can be covered by glass ceramics 7 with the connection between fixing and protection wire 3 and platinum resistance 2.
Cover layer 5 can be glass ceramics or glaze layer.Cover layer comprises SiO2、Al2O3And Y2O3.Such as, cover layer 5 can include the SiO of 40%-60% weight2, 20%-25% weight Al2O3, and, the Y of 10%-19% weight2O3.Cover layer 5 also can comprise can up to the B of 20% weight2O3, for instance the B of 5%-20% weight2O3, and can up to other compositions of 20% weight, particularly other oxides.Such temperature sensor can be used for measuring until the temperature of 1200 DEG C.
Protective layer 4 can be applied by vapour deposition process or apply as follow-up removed green paper tinsel.Cover layer 5 can pass through such as method for printing screen to be produced.In the embodiment of Fig. 1 (being not drawn to draw), cover layer 5 is thicker than protective layer 4.If extra play 6 is placed over the top of layer 5, this extra play 6 can even be thicker than cover layer 5.Then any extra play 6 can be applied in follow-up removal by such as printing as alite paste.The thickness of each layer is not the key that temperature sensor is worked, but can select based on manufacturing consideration.
Although the present invention allows many multi-form embodiments, but specification and drawings only describes the several possible embodiment of the present invention in detail.It is to be appreciated that the disclosure should be considered the illustration to the principle of the invention, it is not intended to limit the invention in the scope of exemplified embodiment.Without departing from the spirit of the invention, those skilled in the art will recognize that many deformation, and protection scope of the present invention should be determined by the content of appended claims.
Claims (10)
1. a temperature sensor, including:
Substrate (1)；
Platinum resistance (2), is arranged on described substrate (1)；
Protective layer (4), covers described platinum resistance (2)；
Cover layer (5), covers described protective layer (4)；
Described cover layer (5) comprises Al2O3And SiO2；
It is characterized in that, described cover layer (5) also comprises Y2O3。
2. temperature sensor according to claim 1, it is characterised in that described cover layer (5) comprises the Y of at least 5% weight2O3, it is preferable that the Y of at least 10% weight2O3。
3. the temperature sensor according to aforementioned any one of claim, it is characterised in that the SiO that described cover layer (5) comprises2Weight more than Al2O3Weight.
4. the temperature sensor according to aforementioned any one of claim, it is characterised in that the Al that described cover layer (5) comprises2O3Weight more than Y2O3Weight.
5. the temperature sensor according to aforementioned any one of claim, it is characterised in that described cover layer (5) comprises less than the Y of 30% weight2O3, it is preferred to less than the Y of 20% weight2O3。
6. the temperature sensor according to aforementioned any one of claim, it is characterised in that described cover layer (5) comprises the Al of 15%-30% weight2O3, it is preferable that the Al of 20%-25% weight2O3。
7. the temperature sensor according to aforementioned any one of claim, it is characterised in that described cover layer (5) comprises the SiO of 30%-70% weight2, it is preferable that the SiO of 40%-60% weight2。
8. the temperature sensor according to aforementioned any one of claim, it is characterised in that described cover layer (5) comprises the B of 0%-25% weight2O3, it is preferable that the B of 1%-20% weight2O3。
9. the temperature sensor according to aforementioned any one of claim, it is characterised in that described cover layer (5) also comprises less than 20% weight, it is preferable that less than 10% weight, and is not Al2O3、SiO2、Y2O3Or B2O3Composition.
10. the temperature sensor according to aforementioned any one of claim, it is characterised in that described cover layer (5) is glaze layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410740115.4A CN105716735A (en) | 2014-12-05 | 2014-12-05 | Temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410740115.4A CN105716735A (en) | 2014-12-05 | 2014-12-05 | Temperature sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105716735A true CN105716735A (en) | 2016-06-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410740115.4A Pending CN105716735A (en) | 2014-12-05 | 2014-12-05 | Temperature sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105716735A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108981958A (en) * | 2017-06-02 | 2018-12-11 | 森萨塔科技公司 | Oxidation aluminium diffusion barrier body for sensing element |
-
2014
- 2014-12-05 CN CN201410740115.4A patent/CN105716735A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108981958A (en) * | 2017-06-02 | 2018-12-11 | 森萨塔科技公司 | Oxidation aluminium diffusion barrier body for sensing element |
| GB2565190A (en) * | 2017-06-02 | 2019-02-06 | Sensata Technologies Inc | Alumina diffusion barrier for sensing elements |
| US10371581B2 (en) | 2017-06-02 | 2019-08-06 | Sensata Technologies, Inc. | Alumina diffusion barrier for sensing elements |
| GB2565190B (en) * | 2017-06-02 | 2020-11-04 | Sensata Technologies Inc | Alumina diffusion barrier for sensing elements |
| CN108981958B (en) * | 2017-06-02 | 2021-08-24 | 森萨塔科技公司 | Alumina diffusion barrier for sensing elements |
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| C06 | Publication | ||
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160629 |
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| WD01 | Invention patent application deemed withdrawn after publication |