CN105714267A - Tube-type PECVD cost-reducing double-layer coating process - Google Patents
Tube-type PECVD cost-reducing double-layer coating process Download PDFInfo
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- CN105714267A CN105714267A CN201610116524.6A CN201610116524A CN105714267A CN 105714267 A CN105714267 A CN 105714267A CN 201610116524 A CN201610116524 A CN 201610116524A CN 105714267 A CN105714267 A CN 105714267A
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- silicon
- nitride film
- cost
- based substrate
- silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
Abstract
The invention discloses a tube-type PECVD cost-reducing double-layer coating process. Through optimizing coating process parameters, not only can the efficiency be increased, but also the aim of reducing the cost can be achieved.
Description
Technical field
The present invention relates to a kind of tubular type PECVD cost-effective duplicature technique, belong to solar-photovoltaic technology field.
Background technology
In the face of global energy crisis, solar photovoltaic technology has become as the new hot-spot for development of semicon industry.Crystal silicon solar batteries manufacture is divided into making herbs into wool/clean, spreads, etches/the operation such as rear cleaning, PECVD plated film, silk screen printing, sintering, testing, sorting.
For crystal silicon solar energy battery tubular type PECVD(PECVD) silicon nitride film deposition technique, use ammonia and silane as plasma reaction gas source, use graphite boat piece as the loading plate of silicon chip and radio-frequency electrode, conventional PECVD coating process one tunic silane flow rate is all at about 1000scc, second tunic silane flow rate is all at about 800 scc, so that battery manufacture cost significantly rises.
Summary of the invention
It is an object of the invention to provide a kind of tubular type PECVD cost-effective duplicature technique, by optimizing the technological parameter of plated film, be possible not only to improve efficiency, it is also possible to reach cost-effective purpose.
A kind of tubular type PECVD cost-effective duplicature technique, comprises two-layer silicon nitride film including being deposited in silicon-based substrate.
A kind of tubular type PECVD cost-effective duplicature technique, in silicon-based substrate, the ground floor thickness of the two-layer silicon nitride film of deposition is 10 ~ 20 nm, and refractive index is 2.2 ~ 2.3；Second layer thickness is 60 ~ 70 nm, and refractive index is 2.0 ~ 2.1.
A kind of tubular type PECVD cost-effective duplicature technique, described silicon-based substrate is multicrystalline silicon substrate.
A kind of tubular type PECVD cost-effective duplicature technique, preparation method comprises the steps:
1) 156 × 156 silicon chips are carried out making herbs into wool；
2) silicon chip after making herbs into wool being diffused preparing PN junction, etching is removed phosphorosilicate glass and carves limit, is silicon-based substrate；
3), after the silicon-based substrate after cleaning inserts graphite boat, it is placed in evacuation in the deposit cavity of tubular type PECVD filming equipment, and is warming up to 300 ~ 500 DEG C；
4) 1600 ~ 1700 mtor are reached when PECVD device vacuum chamber vacuum, being passed through gas flow in boiler tube is the ammonia of 3400 sccm, the silane of 940 sccm, radio-frequency power at 6500 ~ 7200W, dutycycle is 5/50 time ionization 130 ~ 190 sec, depositing ground floor thickness in silicon-based substrate is 10 ~ 20 nm, and refractive index is the silicon nitride film of 2.3 ~ 2.4；
5) silicon chip being coated with ground floor silicon nitride film is proceeded deposition, depositing temperature is 300 ~ 500 DEG C, being passed through gas flow in boiler tube is the ammonia of 6800 sccm, the silane of 780 sccm, radio-frequency power at 6500 ~ 7200W, dutycycle is 5/50 time ionization 350 ~ 500 sec, on ground floor silicon nitride film, deposit thickness is 60 ~ 70 nm, and refractive index is the second layer silicon nitride film of 2.0 ~ 2.1.
It is an advantage of the invention that by technological parameter is optimized, it is not necessary to improve equipment, be possible not only to improve efficiency, also save cost.
Detailed description of the invention
Embodiment 1:
A kind of tubular type PECVD cost-effective duplicature technique, comprises the steps:
1) take the p-type polysilicon sheet 500 of 156mm × 156mm specification that resistivity is 0.5 ~ 3 Ω cm, silicon chip is carried out making herbs into wool；
2) silicon chip after making herbs into wool being diffused preparing PN junction, etching is removed phosphorosilicate glass and carves limit, is silicon-based substrate；
3), after the silicon-based substrate after cleaning inserts graphite boat, it is placed in evacuation in the deposit cavity of tubular type PECVD filming equipment, and is warming up to 400 DEG C；
4) 1600 mtor are reached when PECVD device vacuum chamber vacuum, being passed through gas flow in boiler tube is the ammonia of 3400 sccm, the silane of 950 sccm, radio-frequency power at 6500 W, dutycycle is 5/50 time ionization 140 sec, depositing ground floor thickness in silicon-based substrate is 10 ~ 20 nm, and refractive index is the silicon nitride film of 2.3；
5) silicon chip being coated with ground floor silicon nitride film is proceeded deposition, depositing temperature is 400 ~ 480 DEG C, being passed through gas flow in boiler tube is the ammonia of 6800sccm, the silane of 780 sccm, radio-frequency power at 7000 W, dutycycle is 5/50 time ionization 480 sec, on ground floor silicon nitride film, deposit thickness is 60 ~ 70 nm, and refractive index is the second layer silicon nitride film of 2.04.
Embodiment 2:
A kind of tubular type PECVD cost-effective duplicature technique, comprises the steps:
1) take the p-type polysilicon sheet 500 of 156mm × 156mm specification that resistivity is 0.5 ~ 3 Ω cm, silicon chip is carried out making herbs into wool；
2) silicon chip after making herbs into wool being diffused preparing PN junction, etching is removed phosphorosilicate glass and carves limit, is silicon-based substrate；
3), after the silicon-based substrate after cleaning inserts graphite boat, it is placed in evacuation in the deposit cavity of tubular type PECVD filming equipment, and is warming up to 400 DEG C；
4) 1700 mtor are reached when PECVD device vacuum chamber vacuum, being passed through gas flow in boiler tube is the ammonia of 3400 sccm, the silane of 940 sccm, radio-frequency power at 7000 W, dutycycle is 5/50 time ionization 140 sec, depositing ground floor thickness in silicon-based substrate is 10 ~ 20 nm, and refractive index is the silicon nitride film of 2.3；
5) silicon chip being coated with ground floor silicon nitride film is proceeded deposition, depositing temperature is 400 ~ 480 DEG C, being passed through gas flow in boiler tube is the ammonia of 6800 sccm, the silane of 780 sccm, radio-frequency power at 7000 W, dutycycle is 5/50 time ionization 480 sec, on ground floor silicon nitride film, deposit thickness is 60-70 nm, and refractive index is the second layer silicon nitride film of 2.04.
Comparative example:
Conventional pecvd process, comprises the steps:
1) take the p-type polysilicon sheet 500 of 156mm × 156mm specification that resistivity is 0.5 ~ 3 Ω cm, silicon chip is carried out making herbs into wool；
2) silicon chip after making herbs into wool being diffused preparing PN junction, etching is removed phosphorosilicate glass and carves limit, is silicon-based substrate；
3), after the silicon-based substrate after cleaning inserts graphite boat, it is placed in evacuation in the deposit cavity of tubular type PECVD filming equipment, and is warming up to 400 DEG C；
4) 1600 mtor are reached when PECVD device vacuum chamber vacuum, being passed through gas flow in boiler tube is the ammonia of 4200 sccm, the silane of 1000 sccm, radio-frequency power at 6500 W, dutycycle is 4/48 time ionization 190 sec, depositing ground floor thickness in silicon-based substrate is 10 ~ 20 nm, and refractive index is the silicon nitride film of 2.3；
5) silicon chip being coated with ground floor silicon nitride film is proceeded deposition, depositing temperature is 400 ~ 480 DEG C, being passed through gas flow in boiler tube is the ammonia of 7200 sccm, the silane of 800 sccm, radio-frequency power at 6500 W, dutycycle is 5/35 time ionization 420 sec, on ground floor silicon nitride film, deposit thickness is 65 ~ 70 nm, and refractive index is the second layer silicon nitride film of 2.04.
Comparative result:
As can be seen from the above table data, embodiments of the invention 1 and 2 compare with comparative example, are greatly saved ammonia and silane, and efficiency is also obviously improved simultaneously.
Claims (4)
1. a tubular type PECVD cost-effective duplicature technique, is characterized by: includes being deposited on and comprises two-layer silicon nitride film in silicon-based substrate.
2. a kind of tubular type PECVD cost-effective duplicature technique as claimed in claim 1, is characterized by: in silicon-based substrate, the ground floor thickness of the two-layer silicon nitride film of deposition is 10 ~ 20 nm, and refractive index is 2.2 ~ 2.3；Second layer thickness is 60 ~ 70 nm, and refractive index is 2.0 ~ 2.1.
3. a kind of tubular type PECVD cost-effective duplicature technique as claimed in claim 1, is characterized by: described silicon-based substrate is multicrystalline silicon substrate.
4. a tubular type PECVD cost-effective duplicature technique, is characterized by: preparation method comprises the steps:
1) 156 × 156 silicon chips are carried out making herbs into wool；
2) silicon chip after making herbs into wool being diffused preparing PN junction, etching is removed phosphorosilicate glass and carves limit, is silicon-based substrate；
3), after the silicon-based substrate after cleaning inserts graphite boat, it is placed in evacuation in the deposit cavity of tubular type PECVD filming equipment, and is warming up to 300 ~ 500 DEG C；
4) 1600 ~ 1700 are reached when PECVD device vacuum chamber vacuum
Mtor, being passed through gas flow in boiler tube is the ammonia of 3400 sccm, the silane of 940 sccm, and at the radio-frequency power of 6500 ~ 7200W, dutycycle is 5/50 time ionization 130 ~ 190 sec, depositing ground floor thickness in silicon-based substrate is 10 ~ 20 nm, and refractive index is the silicon nitride film of 2.3 ~ 2.4；
5) silicon chip being coated with ground floor silicon nitride film is proceeded deposition, depositing temperature is 300 ~ 500 DEG C, being passed through gas flow in boiler tube is the ammonia of 6800 sccm, the silane of 780 sccm, radio-frequency power at 6500 ~ 7200W, dutycycle is 5/50 time ionization 350 ~ 500 sec, on ground floor silicon nitride film, deposit thickness is 60 ~ 70 nm, and refractive index is the second layer silicon nitride film of 2.0 ~ 2.1.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610116524.6A CN105714267A (en) | 2016-03-02 | 2016-03-02 | Tube-type PECVD cost-reducing double-layer coating process |
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| CN201610116524.6A CN105714267A (en) | 2016-03-02 | 2016-03-02 | Tube-type PECVD cost-reducing double-layer coating process |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5932286A (en) * | 1993-03-16 | 1999-08-03 | Applied Materials, Inc. | Deposition of silicon nitride thin films |
| CN103545197A (en) * | 2013-10-24 | 2014-01-29 | 英利能源（中国）有限公司 | Tube-type PECVD double-layer silicon nitride film preparation process |
-
2016
- 2016-03-02 CN CN201610116524.6A patent/CN105714267A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5932286A (en) * | 1993-03-16 | 1999-08-03 | Applied Materials, Inc. | Deposition of silicon nitride thin films |
| CN103545197A (en) * | 2013-10-24 | 2014-01-29 | 英利能源（中国）有限公司 | Tube-type PECVD double-layer silicon nitride film preparation process |
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Application publication date: 20160629 |