CN105702874A - Top light-emitting device - Google Patents

Top light-emitting device Download PDF

Info

Publication number
CN105702874A
CN105702874A CN201410689351.8A CN201410689351A CN105702874A CN 105702874 A CN105702874 A CN 105702874A CN 201410689351 A CN201410689351 A CN 201410689351A CN 105702874 A CN105702874 A CN 105702874A
Authority
CN
China
Prior art keywords
layer
reflectance
illuminating device
substrate
protective layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410689351.8A
Other languages
Chinese (zh)
Inventor
朱映光
张国辉
王静
董艳波
宋沛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Visionox Technology Co Ltd
Original Assignee
Beijing Visionox Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Visionox Technology Co Ltd filed Critical Beijing Visionox Technology Co Ltd
Priority to CN201410689351.8A priority Critical patent/CN105702874A/en
Publication of CN105702874A publication Critical patent/CN105702874A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electroluminescent Light Sources (AREA)

Abstract

The invention discloses a top light-emitting device. The top light-emitting device comprises a substrate, a transparent conductive layer, an organic light emitting layer and a cathode layer; a high-diffusion reflection layer is arranged between the substrate and the transparent conductive layer; and the reflectivity of the high-diffusion reflection layer for visible light is larger than 8%. According to the top light-emitting device of the invention, the high-diffusion reflection layer is arranged between the substrate and the transparent conductive layer, so that the micro cavity effect of a traditional top light-emitting device can be eliminated, and therefore, white light can be obtained through modulation and can be used for lighting and the top light-emitting device of the invention has the advantages of simple process and high luminous efficiency.

Description

A kind of top illuminating device
Technical field
The present invention relates to OLED technology field, specifically, be a kind of top illuminating device。
Background technology
At OLED(OrganicLight-EmittingDiode, Organic Light Emitting Diode) in technical field, device architecture generally comprises end luminescent device and top illuminating device。End emitting OLED-device substrate used thereof must be transparent, which greatly limits the range of choice of substrate。The substrate of some excellent performances, as better in thermal diffusivity, mechanical strength is high, can as the tinsel substrate of flexible substrate, due to light tight, this kind of substrate is not used to the end luminescent device of illumination, can be only applied in top illuminating device。But traditional top-illuminating OLED device is due to microcavity effect, not easily modulates white light, so being rarely applied to lighting field。
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of top illuminating device, it is possible to making full use of the substrate of excellent performance, and can eliminate or slacken microcavity effect, thus modulating white light, being particularly well-suited to lighting field。
In order to solve above-mentioned technical problem, the invention provides a kind of top illuminating device, including substrate, transparency conducting layer, organic luminous layer and cathode layer, between described substrate and described transparency conducting layer, be additionally provided with high diffuse-reflectance layer, described high diffuse-reflectance layer to visible reflectance more than 80%。
Further, described high diffuse-reflectance layer to visible reflectance more than 95%。
Further, described high diffuse-reflectance layer is by coating substrate surface by high diffuse-reflectance rate material with spin coating, spraying or silk screen printing process, and described transparency conducting layer is formed on highly-reflective coating with sputtering method, nebulization, cladding process, infusion process, chemical vapour deposition technique, vacuum vapour deposition or sputtering method。
Further, described high diffuse-reflectance rate material is the mixture of at least one and rubstick class material in barium sulfate, titanium oxide, calcium carbonate, calcium sulfate, aluminium oxide, magnesium oxide, magnesium sulfate, magnesium silicate, zinc oxide, glass, aluminium nitride, boron nitride, silicon dioxide, zirconium oxide, Hollow Glass Sphere。
Further, described high diffuse-reflectance rate material is Fluorilon-99WTMMaterial。
Further; described high diffuse-reflectance rate material is the composite of high reflectance; the composite of described high reflectance includes base material, affine layer, the coat of metal and protective layer, and described base material, affine layer, the coat of metal, protective layer cover described substrate from bottom to up successively。
Further, described protective layer includes the first protective layer and the second protective layer, and the second protective layer covers the described coat of metal, and the first protective layer covers described second protective layer。
Further, the material of described base material is selected from aluminum, ferrum or copper;Described affine layer is porous oxide film;The described coat of metal is aluminium coated;Described second protective layer is fluoride coating;Described first protective layer is oxide coating。
Further, the material of described transparency conducting layer is metal-oxide film。
Further, described substrate is tinsel, or is polymer material substrate, or is polymer overlying sheet layer inorganic thin film, or is covering multilamellar organic/inorganic film-substrate on polymer。
The top illuminating device of the present invention, by arranging high diffuse-reflectance layer between substrate and transparency conducting layer, eliminates the microcavity effect of tradition top illuminating device with this, such that it is able to modulate white light, for illumination。Further, the top illuminating device technique of the present invention is simple, device light emitting efficiency is high。
Accompanying drawing explanation
Fig. 1 is the structural representation of the top illuminating device of the present invention。
In figure: 1. substrate, 2. high diffuse-reflectance rate layer, 3. transparency conducting layer, 4. organic luminous layer, 5. cathode layer。
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the invention will be further described, so that those skilled in the art can be more fully understood that the present invention and can be practiced, but illustrated embodiment is not as a limitation of the invention。
As it is shown in figure 1, the top illuminating device of the present invention, including substrate, transparency conducting layer, organic luminous layer and cathode layer, between substrate and transparency conducting layer, it is additionally provided with high diffuse-reflectance layer。Wherein, high diffuse-reflectance layer is positioned at substrate surface, and described transparency conducting layer is positioned on high diffuse-reflectance layer。Described high diffuse-reflectance layer, refers to the visible reflectance reflecting layer more than 80%, it is preferred to the visible reflectance reflecting layer more than 95%。
Preferably, high diffuse-reflectance layer is by coating substrate surface by high diffuse-reflectance rate material in spin coating mode, and transparency conducting layer sputtering is formed on highly-reflective coating。Certainly, high diffuse-reflectance layer is not limited to coat substrate surface with spin coating proceeding, it would however also be possible to employ the techniques such as spraying, silk-screen;Equally, transparency conducting layer is also not necessarily limited to be formed on high diffuse-reflectance coating with sputtering technology, it is also possible to adopt the techniques such as nebulization, cladding process, infusion process, chemical vapour deposition technique, vacuum vapour deposition, sputtering method。
Wherein, but at least one mixture with rubstick class material in high diffuse-reflectance rate material barium sulfate, titanium oxide, calcium carbonate, calcium sulfate, aluminium oxide, magnesium oxide, magnesium sulfate, magnesium silicate, zinc oxide, glass, aluminium nitride, boron nitride, silicon dioxide, zirconium oxide, Hollow Glass Sphere。
Wherein, rubstick class material such as resinae, organic photoresist, inorganic resist etc., mixed proportion is: the ratio of high diffuse-reflectance rate material and rubstick for more than 0 less than 3:1。Wherein high diffuse-reflective material mean diameter is 0.1-10um, and high diffuse-reflectance layer thickness is 0.5um-150um。
High diffuse-reflectance rate material can also is that Fluorilon-99WTMMaterial。Fluorilon-99WTMBe a kind of commercially available, there is the white of high diffuse-reflectance coefficient, high stable thermoplastic。This material has good heat stability (> 300 degrees Celsius) and chemical stability。
High diffuse-reflectance rate material can also is that the composite of high reflectance, and the composite of this high reflectance includes base material, affine layer, the coat of metal and protective layer, and protective layer includes again the first protective layer and the second protective layer。Base material, affine layer, the coat of metal, the second protective layer and the first protective layer cover substrate from bottom to up successively。Wherein, the material of base material is selected from aluminum, ferrum or copper;Affine layer is porous oxide film;The coat of metal is aluminium coated;Second protective layer is fluoride coating;First protective layer is oxide coating。The composite of this high reflectance to the reflectance of visible ray up to more than 98%。
In the top illuminating device of the present invention, the material of transparency conducting layer can be metal-oxide film (TCO), and it refers to and has the oxide of transparent conductivity, nitride, fluoride, doping oxide or mixed oxide, and wherein oxygen (nitrogen) compound is: In2O3、SnO2, ZnO, CdO, TiN。Doping oxide is: In2O3: Sn(ITO), ZnO:In(IZO), ZnO:Ga(GZO), ZnO:Al(AZO), ZnO2: F, TiO2: Ta。Mixed oxide is: In2O3-ZnO、CdIn2O4、Cd2Sn2O4、Zn2SnO4
And substrate can select tinsel。Tinsel substrate has that thermal diffusivity is good, mechanical strength is high, can as advantages such as flexible substrate。Certainly, substrate is not limited to tinsel, other light weight, the material that shock-resistant, water oxygen barrier performance is good, mechanical strength is high can also serve as substrate, for instance polymer material substrate (polyethylene, polypropylene, polystyrene etc.), polymer overlying sheet layer inorganic thin film or multilamellar organic/inorganic film-substrate etc.。
The top illuminating device of the present invention can eliminate or slacken the microcavity effect of tradition top illuminating device, such that it is able to modulate white light, is particularly well-suited to illumination。Further, the top illuminating device technique of the present invention is simple, device light emitting efficiency is high。
Embodiment described above is only the preferred embodiment lifted for absolutely proving the present invention, and protection scope of the present invention is not limited to this。Equivalent replacement that those skilled in the art make on basis of the present invention or conversion, all within protection scope of the present invention。Protection scope of the present invention is as the criterion with claims。

Claims (10)

1. a top illuminating device, including substrate, transparency conducting layer, organic luminous layer and cathode layer, it is characterised in that be additionally provided with high diffuse-reflectance layer between described substrate and described transparency conducting layer, described high diffuse-reflectance layer to visible reflectance more than 80%。
2. top illuminating device according to claim 1, it is characterised in that described high diffuse-reflectance layer to visible reflectance more than 95%。
3. top illuminating device according to claim 1, it is characterized in that, described high diffuse-reflectance layer is by coating substrate surface by high diffuse-reflectance rate material with spin coating, spraying or silk screen printing process, and described transparency conducting layer is formed on highly-reflective coating with sputtering method, nebulization, cladding process, infusion process, chemical vapour deposition technique, vacuum vapour deposition or sputtering method。
4. top illuminating device according to claim 3, it is characterized in that, described high diffuse-reflectance rate material is the mixture of at least one and rubstick class material in barium sulfate, titanium oxide, calcium carbonate, calcium sulfate, aluminium oxide, magnesium oxide, magnesium sulfate, magnesium silicate, zinc oxide, glass, aluminium nitride, boron nitride, silicon dioxide, zirconium oxide, Hollow Glass Sphere。
5. top illuminating device according to claim 3, it is characterised in that described high diffuse-reflectance rate material is Fluorilon-99WTMMaterial。
6. top illuminating device according to claim 3; it is characterized in that; described high diffuse-reflectance rate material is the composite of high reflectance; the composite of described high reflectance includes base material, affine layer, the coat of metal and protective layer, and described base material, affine layer, the coat of metal, protective layer cover described substrate from bottom to up successively。
7. top illuminating device according to claim 6, it is characterised in that described protective layer includes the first protective layer and the second protective layer, the second protective layer covers the described coat of metal, and the first protective layer covers described second protective layer。
8. top illuminating device according to claim 7, it is characterised in that the material of described base material is selected from aluminum, ferrum or copper;Described affine layer is porous oxide film;The described coat of metal is aluminium coated;Described second protective layer is fluoride coating;Described first protective layer is oxide coating。
9. top illuminating device according to claim 1, it is characterised in that the material of described transparency conducting layer is metal-oxide film。
10. top illuminating device according to claim 1, it is characterised in that described substrate is tinsel, or be polymer material substrate, or be polymer overlying sheet layer inorganic thin film, or be covering multilamellar organic/inorganic film-substrate on polymer。
CN201410689351.8A 2014-11-26 2014-11-26 Top light-emitting device Pending CN105702874A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410689351.8A CN105702874A (en) 2014-11-26 2014-11-26 Top light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410689351.8A CN105702874A (en) 2014-11-26 2014-11-26 Top light-emitting device

Publications (1)

Publication Number Publication Date
CN105702874A true CN105702874A (en) 2016-06-22

Family

ID=56942074

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410689351.8A Pending CN105702874A (en) 2014-11-26 2014-11-26 Top light-emitting device

Country Status (1)

Country Link
CN (1) CN105702874A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111146677A (en) * 2019-12-24 2020-05-12 丹阳市朗宁光电子科技有限公司 White light source

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008234931A (en) * 2007-03-19 2008-10-02 Toshiba Matsushita Display Technology Co Ltd Light emitting device
CN102514295A (en) * 2011-12-02 2012-06-27 上海安美特铝业有限公司 Ultrahigh-reflectivity composite material and preparation method thereof
CN102956837A (en) * 2011-08-26 2013-03-06 三菱综合材料株式会社 Organic electroluminescence component and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008234931A (en) * 2007-03-19 2008-10-02 Toshiba Matsushita Display Technology Co Ltd Light emitting device
CN102956837A (en) * 2011-08-26 2013-03-06 三菱综合材料株式会社 Organic electroluminescence component and manufacturing method thereof
CN102514295A (en) * 2011-12-02 2012-06-27 上海安美特铝业有限公司 Ultrahigh-reflectivity composite material and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111146677A (en) * 2019-12-24 2020-05-12 丹阳市朗宁光电子科技有限公司 White light source
CN111146677B (en) * 2019-12-24 2021-12-17 丹阳市朗宁光电子科技有限公司 White light source

Similar Documents

Publication Publication Date Title
US10079367B2 (en) Waterproof and anti-reflective flexible OLED apparatus and method for manufacturing the same
US8593055B2 (en) Substrate bearing an electrode, organic light-emitting device incorporating it, and its manufacture
JP2012523074A (en) Method of manufacturing an organic light emitting diode device having a structure with a textured surface, and the resulting OLED with a structure with a textured surface
JP2007287486A (en) Organic electroluminescence element having fine structure between transparent substrate and electrode
JP2008251500A (en) Surface light emitter
CN103490019A (en) Organic electroluminescence device packaging structure and method and display device
CN109065757B (en) Substrate for OLED lighting device and lighting device
CN104810436B (en) A kind of light-emitting diode chip for backlight unit and preparation method thereof
CN205194746U (en) Organic light -emitting diode device and have its display panel
JP2007035313A (en) Light take-out film, translucent element with light take-out film, and electroluminescent element
CN104769739B (en) Nesa coating and the organic luminescent device for including the nesa coating
WO2009007919A2 (en) Organic light emitting diodes having improved optical out-coupling
JP2010055894A (en) Sealing film for light-emitting element
CN203466226U (en) Packaging structure of organic light-emitting device and display device
TWI666804B (en) Transparent diffusive oled substrate and method for producing such a substrate
CN105702874A (en) Top light-emitting device
JP6198561B2 (en) Metal oxide thin film substrate for organic light emitting device and manufacturing method thereof
CN102593369B (en) A kind of OLED lighting device and manufacture method
CN106654064B (en) A kind of preparation method and applications of top emission OLED device refraction passivation layer
WO2014136723A1 (en) Organic electroluminescent element and method for manufacturing same
JP2007294438A (en) Organic el element
US20170084871A1 (en) Touch control organic light-emitting display panel
Cirpan et al. Indium tin oxide nanoparticles as anode for light‐emitting diodes
KR20110013049A (en) Organic light emitting device and method for manufacturing the same
CN102664240A (en) Organic electroluminescent display device and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20160622