CN105702858A - Phase-change memory and manufacturing method thereof - Google Patents
Phase-change memory and manufacturing method thereof Download PDFInfo
- Publication number
- CN105702858A CN105702858A CN201610168967.XA CN201610168967A CN105702858A CN 105702858 A CN105702858 A CN 105702858A CN 201610168967 A CN201610168967 A CN 201610168967A CN 105702858 A CN105702858 A CN 105702858A
- Authority
- CN
- China
- Prior art keywords
- heating
- layer
- zone
- material layer
- patterning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 238000010438 heat treatment Methods 0.000 claims abstract description 458
- 239000000463 material Substances 0.000 claims abstract description 287
- 238000000059 patterning Methods 0.000 claims abstract description 173
- 238000000034 method Methods 0.000 claims abstract description 66
- 230000008859 change Effects 0.000 claims description 118
- 238000010792 warming Methods 0.000 claims description 77
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 17
- 239000003989 dielectric material Substances 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 239000005360 phosphosilicate glass Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 238000005240 physical vapour deposition Methods 0.000 description 9
- 239000007769 metal material Substances 0.000 description 8
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910052714 tellurium Inorganic materials 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 239000012782 phase change material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910018110 Se—Te Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910001040 Beta-titanium Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
- 229910005900 GeTe Inorganic materials 0.000 description 1
- 229910005939 Ge—Sn Inorganic materials 0.000 description 1
- 229910017629 Sb2Te3 Inorganic materials 0.000 description 1
- 229910020938 Sn-Ni Inorganic materials 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- 229910002855 Sn-Pd Inorganic materials 0.000 description 1
- 229910018731 Sn—Au Inorganic materials 0.000 description 1
- 229910008937 Sn—Ni Inorganic materials 0.000 description 1
- 229910008772 Sn—Se Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/861—Thermal details
- H10N70/8613—Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
Abstract
The invention discloses a phase-change memory and a manufacturing method thereof. The method for manufacturing the phase-change memory comprises the following operations: (a) forming a stack-layer structure on a base material, wherein the stack-layer structure comprises a first heating material layer, a second heating material layer and a first dielectric layer; (b) forming a first notch to penetrate through the stack-layer structure; (c) forming a first conductive contact structure in the first notch; (d) patterning the stack-layer structure, and forming a first patterned heating material layer, a second patterned heating material layer and a first patterned dielectric layer by the residual part of the stack-layer structure; (e) forming a second notch to penetrate through the residual part of the stack-layer structure, disconnecting the first patterned heating material layer and the second patterned heating material layer by the second notch and forming a first multi-layer heating element and a second multi-layer heating element; and (f) forming a phase-change element in the second notch. The invention also discloses the phase-change memory. The disclosed phase-change memory has relatively high read-in data speed and reliability.
Description
Technical field
The invention relates to a kind of phase-change memory and manufacture method thereof。
Background technology
Computer or other electronic installations are commonly configured with various types of memory body, for instance random access memory (RAM), read-only memory (ROM), Dynamic Random Access Memory (DRAM), synchronous dynamic random-access memory body (SDRAM), phase change random access memory (PCRAM) or fast flash memory bank。Phase-change memory is nonvolatile memory body, can obtain be stored in data therein by measuring the resistance value of memory cell。It is said that in general, phase-change memory unit comprises heating element heater and phase change cell, phase change cell can because being heated and undergoing phase transition。When passing into electric current to heating element heater, heating element heater converts electric energy into heat, and produced heat promotes the change of phase change cell generation phase, for instance be transformed into crystalline phase (crystalline) from amorphous phase (amorphous)。Phase change cell has different resistance values in different crystalline phases, via detecting or the resistance value reading phase change cell, is just judged the data types of memory cell。Higher writing speed and better reliability is provided to be always up the target that memory body manufacturer makes great efforts。
Summary of the invention
Multiple embodiments according to the present invention, it is provided that the manufacture method of a kind of phase-change memory, the method can allow phase change element occur crystalline phase to change more quickly, and can improve the reliability of phase-change memory。The method comprises following operation: (a) forms a pile laminated construction on a base material, and stack layer structure comprises one first heating material layer, one second heating material layer and one first dielectric layer and is located between the first heating material layer and the second heating material layer；B () forms one first recess and runs through stack layer structure；C () forms one first conductive contact structure in the first recess, make the first conductive contact structure contact the first heating material layer and the second heating material layer；(d) patterning stack layer structure, the remainder making stack layer structure forms one first patterning heating material layer, one second patterning heating material layer and one first pattern dielectric layer and is located between the first patterning heating material layer and the second patterning heating material layer, and wherein the first patterning heating material layer and the second patterning heating material layer contact the first conductive contact structure；E () forms one second recess and runs through the remainder of stack layer structure, second recess patterns heating material layer by first and the second patterning heating material layer disconnects, wherein the residual fraction of the first patterning heating material layer and the second patterning heating material layer forms one first Multi-layer warming element and one second Multi-layer warming element respectively in the both sides of the second recess, and wherein the first Multi-layer warming element contacts the first conductive contact structure；And (f) forms a phase change element in the second recess, and phase change element contacts the first Multi-layer warming element and the second Multi-layer warming element。
In some embodiments, said method can following further operate: forms one second dielectric layer and covers the first conductive contact structure and phase change element；Form one the 3rd recess and run through the second dielectric layer and the second Multi-layer warming element；And form one second conductive contact structure in the 3rd recess, make the second conductive contact structure contact the second Multi-layer warming element。
In some embodiments, stack layer structure also comprises one the 3rd dielectric layer and one the 4th dielectric layer, and the 3rd dielectric layer is folded between base material and the first dielectric layer, and the 4th dielectric layer is positioned on the second heating material layer。
In some embodiments, after forming the second recess, also comprise: a sidewall of the sidewall of the first dielectric layer, a sidewall of the 3rd dielectric layer and the 4th dielectric layer that etch in the second recess, make an edge of the first Multi-layer warming element protrude the sidewall of the sidewall of the first dielectric layer, the sidewall of the 3rd dielectric layer and the 4th dielectric layer。
In some embodiments, in the operation of patterning stack layer structure, first patterning heating material layer and the second patterning each self-contained one first wide portion of heating material layer, one second wide portion and a cervical region, the each self-corresponding first wide portion of each neck bridge and the second width portion, and a width in the width of each cervical region width less than each self-corresponding first wide portion and the second wide portion。
In some embodiments, the operation forming the second recess comprises the part removing each cervical region, and disconnects the first patterning heating material layer and the second patterning heating material layer。
In some embodiments, run through in the operation of remainder of stack layer structure at formation the second recess, one remainder of the first patterning heating material layer and a remainder of the second patterning heating material layer form one first zone of heating structure and the one second zone of heating structure of the first Multi-layer warming element respectively, and another remainder of another remainder of the first patterning heating material layer and the second patterning heating material layer forms one the 3rd zone of heating structure and one the 4th zone of heating structure of the second Multi-layer warming element respectively。
Multiple embodiments according to the present invention, the method that another kind manufactures phase-change memory is provided, the method comprises following operation: (i) forms a patterning stacked structure on a base material, wherein patterning stacked structure comprises one first patterning heating material layer, one second patterning heating material layer and a patterned conductive layer are interposed between the first patterning heating material layer and the second patterning heating material layer, wherein the first patterning heating material layer, second patterning heating material layer and each self-contained one first width portion of patterned conductive layer, one second wide portion and one first narrow portion, each first narrow portion bridges each self-corresponding first wide portion and the second width portion；(ii) the first narrow portion of patterned conductive layer is removed, and remove the first wide portion and the second respective part in width portion of patterned conductive layer, to form one first conductive structure separated from one another and one second conductive structure, wherein the first conductive structure is interposed between the first wide portion of the first patterning heating material layer and the first width portion of the second patterning heating material layer, and the second conductive structure is interposed between the second wide portion of the first patterning heating material layer and the second width portion of the second patterning heating material layer；(iii) form one first dielectric layer and cover the first patterning heating material layer and the second patterning heating material layer and the first conductive structure and the second conductive structure；(iv) remove a part for each first narrow portion of the first patterning heating material layer and the second patterning heating material layer and remove a part for the first dielectric layer, and forming one first recess blocking each first narrow portion；And (v) forms a phase change element in the first recess。
In some embodiments, above-mentioned method, also comprise following operation: form one the 3rd dielectric layer and cover phase change element and the first dielectric layer；Forming one second recess in the 3rd dielectric layer and the first dielectric layer, the second recess exposes the second width portion of the second patterning heating material layer；And form one second conductive contact structure in the second recess, make the second width portion of second conductive contact structure contact the second patterning heating material layer。
In some embodiments, in operation (iv), one remainder of the first patterning heating material layer and a remainder of the second patterning heating material layer form one first zone of heating structure and one second zone of heating structure respectively, and first another remainder of patterning another remainder of heating material layer and the second patterning heating material layer form one the 3rd zone of heating structure and one the 4th zone of heating structure respectively, wherein the first zone of heating structure and the second zone of heating structure are positioned at the side of the first recess, and the 3rd zone of heating structure and the 4th zone of heating structure be positioned at the opposite side of the first recess。
In some embodiments, in operation (iv), the first recess further extends in the second dielectric layer。
In some embodiments, after operation (iv), also comprise: etch a sidewall of the first dielectric layer in the first recess and a sidewall of the second dielectric layer, make a marginal portion of at least one in the first zone of heating structure and the second zone of heating structure protrude the sidewall of the second dielectric layer and the sidewall of the first dielectric layer。
In some embodiments, in operation (i), first patterning heating material layer, the second patterning heating material layer and patterned conductive layer each also comprise one second narrow portion, each second narrow portion bridges each self-corresponding first wide portion and the second width portion, and wherein operation (iv) also comprises a part for the second narrow portion removing each first patterning heating material layer and the second patterning heating material layer, and form the first recess。
Multiple embodiments according to the present invention, it is provided that another kind of phase-change memory。This phase-change memory comprises one first conductive contact structure, a phase change element, one first Multi-layer warming element and one second conductive contact structure。Phase change element has the first side wall one and one second sidewall。First Multi-layer warming element is electrically connected this first conductive contact structure。This first Multi-layer warming element comprises one first zone of heating structure, one second zone of heating structure and one first conductive structure, this first conductive structure is interposed between this first zone of heating structure and this second zone of heating structure, this first side wall of this first zone of heating structure and this second zone of heating this phase change element of form touch。Second conductive contact structure is configured at above this phase change element。
In some embodiments, this second conductive contact structure directly contacts this phase change element。
In some embodiments, described phase-change memory also comprises one second Multi-layer warming element, this the second Multi-layer warming element comprises one the 3rd zone of heating structure, one the 4th zone of heating structure and one second conductive structure, this second conductive structure is interposed between the 3rd and the 4th zone of heating structure, this second sidewall of 3rd zone of heating structure and the 4th zone of heating this phase change element of form touch, this second conductive contact structure is electrically connected this second Multi-layer warming element。
In some embodiments, this first conductive contact structure runs through and contacts this first zone of heating structure and this second zone of heating structure, and this second conductive contact structure runs through and contacts the 3rd zone of heating structure and the 4th zone of heating structure。
In some embodiments, this the first zone of heating structure and this second zone of heating structure be horizontal expansion on one first height and one second height respectively, and the horizontal expansion on this first height and this second height respectively of the 3rd zone of heating structure and the 4th zone of heating structure。
In some embodiments, this the first zone of heating structure and each self-contained wide portion of this second zone of heating structure, one first narrow portion, and a width in each this wide portion is more than a width of respectively this first narrow portion, this first narrow portion is extended by this width portion and contacts this first side wall of this phase change element。
In some embodiments, this second conductive contact structure directly contacts this phase change element。
In some embodiments, described phase-change memory also comprises one second Multi-layer warming element, wherein this second Multi-layer warming element comprises one the 3rd zone of heating structure, one the 4th zone of heating structure and one second conductive structure, this second conductive structure is interposed between the 3rd zone of heating structure and the 4th zone of heating structure, this second sidewall of 3rd zone of heating structure and the 4th zone of heating this phase change element of form touch, this second conductive contact structure is electrically connected this second Multi-layer warming element。
In some embodiments, this first conductive contact structure runs through and contacts this first zone of heating structure and this second zone of heating structure, and this second conductive contact structure runs through and contacts the 3rd zone of heating structure and the 4th zone of heating structure。
In some embodiments, this the first zone of heating structure and this second zone of heating structure be horizontal expansion on one first height and one second height respectively, and the horizontal expansion on this first height and this second height respectively of the 3rd zone of heating structure and the 4th zone of heating structure。
In some embodiments, this the first zone of heating structure and each self-contained wide portion of this second zone of heating structure, one first narrow portion, and a width in each this wide portion is more than a width of respectively this first narrow portion, this first narrow portion is extended by this width portion and contacts this first side wall of this phase change element。
In some embodiments, this first zone of heating structure and this second zone of heating structure each also comprise one second narrow portion, and this second narrow portion is extended by this width portion and contacts this first side wall of this phase change element。
In some embodiments, this the first zone of heating structure and this second zone of heating structure at least one of which comprise the multiple sub-structure being stacked with, and two the material of adjacent described sub-structure different each other, allow and there is a resistivity differences between the material of described two adjacent sub-structure。
In some embodiments, a marginal portion of this first zone of heating structure and this second zone of heating structure at least one of which embeds this first side wall of this phase change element。
Accompanying drawing explanation
Figure 1A illustrates the flow chart of the method manufacturing phase-change memory according to some embodiment of the present invention；
Figure 1B illustrates the flow chart of other operations of the method manufacturing phase-change memory of some embodiment of the present invention；
Fig. 2 A-Figure 10 B figure illustrates upper schematic diagram and the generalized section of each process stage of the method manufacturing phase-change memory of some embodiment of the present invention respectively；
Figure 11 A-Figure 13 B figure illustrates upper schematic diagram and the generalized section of the different process stage of the method manufacturing phase-change memory of the present invention additionally some embodiment respectively；
Figure 14 illustrates the generalized section of the present invention additionally phase-change memory of some embodiment；
Figure 15 A illustrates the flow chart of the method manufacturing phase-change memory according to the present invention additionally some embodiment；
Figure 15 B illustrates the flow chart of other operations of the method manufacturing phase-change memory of the present invention additionally some embodiment；
Figure 16 A-Figure 24 C illustrates upper schematic diagram and the generalized section of each process stage of the method manufacturing phase-change memory of the present invention additionally some embodiment；
Figure 25-Figure 26 illustrates the generalized section of the present invention additionally phase-change memory of some embodiment；
Figure 27 A-Figure 27 B illustrates upper schematic diagram and the generalized section of the present invention additionally phase-change memory of some embodiment。
Detailed description of the invention
In order to the narration making the present invention is more detailed in complete, propose illustrative description below for the enforcement aspect of the present invention, embodiment and specific embodiment；But this not implements or uses the unique forms of the specific embodiment of the invention。Each embodiment disclosed below, can be mutually combined or replace useful when, it is possible to adds other embodiment in one embodiment, and need not further record or illustrate。
In the following description, reader will be described in detail many specific detail so that can fully understand below example。But, embodiments of the invention can be put into practice when without these specific detail。In other cases, for simplifying accompanying drawing, the structure known and device are only symbolically illustrated in figure。
Space used herein relative terms, for instance " lower section ", " under ", " top ", " on " etc., this is for the ease of describing the relativeness between an element or feature and another element or feature, depicted in figure。The true meaning of these relative terms spatially comprises other orientation。Such as, when diagram spins upside down 180 degree, the relation between an element and another element, it is possible to from " lower section ", " under " become " top ", " on "。Additionally, relative narration spatially used herein also should do same explanation。
The various enforcement aspects of the present invention or embodiment are to provide a kind of method manufacturing phase-change memory。Figure 1A illustrates the flow chart of the method 1 manufacturing phase-change memory according to some embodiment of the present invention。Method 1 comprises operation 10, operation 20, operation 30, operation 40, operation 50 and operation 60。
Although hereinafter utilizing a series of operation or step that the method in this exposure is described, but the order shown in these operations or step is not necessarily to be construed as the restriction of the present invention。Such as, some operation or step can be undertaken by different order and/or carry out with other step simultaneously。Enforcement aspect, the embodiment of the present invention could be realized additionally, not necessarily perform all steps illustrated or execute example。Additionally, each operation described herein or step can comprise several sub-step or action。
Implement aspect 1
In the operation 10 of Figure 1A, form stack layer structure on base material。Fig. 2 A illustrates the upper schematic diagram performing operation 10 of some embodiment of the present invention, and Fig. 2 B illustrates the generalized section in Fig. 2 A along line segment B-B '。As shown in Figure 2 A and 2 B, forming stack layer structure 110 on base material 101, stack layer structure 110 comprises the first heating material layer the 111, second heating material layer 112 and the first dielectric layer 113。First dielectric layer 113 is located between the first heating material layer 111 and the second heating material layer 112。In some embodiments, stack layer structure 110 also comprises the 3rd dielectric layer 114 and the 4th dielectric layer 115, and the 3rd dielectric layer 114 is folded between base material 101 and the first heating material layer 111, and the 4th dielectric layer 115 is positioned on the second heating material layer 112。In one embodiment, the 3rd dielectric layer 114 contacts base material 101 and the first heating material layer 111, and the 4th dielectric layer 115 forms the uppermost surface of stack layer structure 110。
In some embodiments, base material 101 can comprise doped or undoped Silicon Wafer or quasiconductor upper insulator (SOI) base material or similar semi-conducting material。
In some embodiments, first heating material layer 111 and the second heating material layer 112 can use blanket-deposited technology to be formed, for instance physical vapour deposition (PVD) processing procedure (PVD), chemical vapor deposition process (CVD), plasma enhanced chemical vapor (PECVD), ald processing procedure (ALD) and/or atomic layer chemical vapor deposition processing procedure (ALCVD) etc.。In certain embodiments, the first heating material layer 111 and the second heating material layer 112 can comprise the combination of titanium nitride (TiN), tantalum nitride (TaN), titanium (Ti), iridium (Ir), β-tantalum (β-Ta), tungsten nitride (WN), tungsten (W), platinum (Pt) or similar material or above-mentioned material。In some embodiments, the thickness of the first heating material layer 111 and the second heating material layer 112 can be about 2nm to about 40nm, it is advantageous to about 3nm to about 20nm, more preferably about 5nm to about 10nm。If the thickness of patterning heating material layer 130 is too thick, it is possible to be unfavorable for the performance of final products, but when the thickness of patterning heating material layer 130 is too thin, it is possible to cause that the dose rate of successive process declines, describe in greater detail below。
First dielectric layer the 113, the 3rd dielectric layer 114 and the 4th dielectric layer 115 can be any applicable dielectric materials, the dielectric materials such as the such as silica glass of silicon nitride, silicon oxide, doping, first dielectric layer the 113, the 3rd dielectric layer 114 and the 4th dielectric layer 115 can also be formed by the dielectric material of low-k, for instance phosphosilicate glass (PSG), boron-phosphorosilicate glass (BPSG), fluorine silica glass (FSG), carbofrax material or combinations of the above or similar material。
In follow-up Fig. 3 A to Figure 13 B, accompanying drawing number comprises the accompanying drawing of letter " A ", for instance Fig. 3 A, Fig. 4 A, Fig. 5 A etc. scheme, for upper schematic diagram；Accompanying drawing number comprises the accompanying drawing of primary and secondary " B ", for instance Fig. 3 B, Fig. 4 B, Fig. 5 B etc. scheme, for the generalized section along line segment B-B '。
In the operation 20 of Figure 1A, form the first recess and run through stack layer structure。Refer to Fig. 3 A and Fig. 3 B, operation 20 is including at least the part removing a part for the first heating material layer 111, the part of the second heating material layer 112 and the first dielectric layer 113, and forms the first recess 120 running through stack layer structure 110。Additionally, sidewall 112S, sidewall 111S and sidewall 112S that the operation forming the first recess 120 comprises the sidewall 111S and the second heating material layer 112 that form the first heating material layer 111 expose via the first recess 120。In some embodiments, the first recess 120 also exposes a part for base material 101。Some embodiment according to the present invention, in operation 20, is initially formed patterning shade 121 on the second dielectric layer 112, and patterning shade 121 has an opening。Then, it is etched processing procedure, removes the stack layer structure 110 of the opening range being arranged in patterning shade 121, and form the first recess 120。Afterwards, patterning shade 121 is removed。
In the operation 30 of Figure 1A, form the first conductive contact structure in the first recess 120。Refer to Fig. 4 A and Fig. 4 B, the first recess 120 is formed the first conductive contact structure 130, make the first conductive contact structure 130 contact the sidewall 111S of the first heating material layer 111 and sidewall 112S of the second heating material layer 112。In some embodiments, first code-pattern ground deposition layer of conductive material layer, this conductive material layer fills up the first recess 120, and is deposited on the top of stack layer structure 110。Then, carry out cmp, remove the conductive material layer above stack layer structure 110, and in the first recess 120, form the first conductive contact structure 130。
In the operation 40 of Figure 1A, refer to Fig. 5 A and Fig. 5 B, stack layer structure 110 is patterned processing procedure, allows the remainder 110R of stack layer structure 110 form the first patterning heating material layer 141, second and pattern heating material layer 142 and the first pattern dielectric layer 143。First pattern dielectric layer 143 is folded between the first patterning heating material layer 141 and the second patterning heating material layer 142。First and second patterning heating material layer 141,142 contacts the first conductive contact structure 130。For example, in operation 40, it is initially formed patterning shade 122 and covers a part for the first conductive contact structure 130 and stack layer structure 110, be then etched processing procedure, remove the part not being patterned the stack layer structure 110 that shade 122 covers。Afterwards, remove patterning shade 122, obtain the remainder 110R of stack layer structure 110。In some embodiments, the remainder 110R of stack layer structure 110 also comprises pattern dielectric layer 144 and pattern dielectric layer 145。In the present embodiment, the pattern of the remainder 110R of stack layer structure 110 is rectangle。
Refer to Fig. 6 A and Fig. 6 B, after operation 40, can be selectively formed dielectric layer 146 around the remainder 110R of stack layer structure 110。In some embodiments, first one layer of dielectric materials layer of deposition covers remainder 110R, and fills the space around remainder 110R；Then carry out CMP step and remove the dielectric material being deposited on above remainder 110R, and form dielectric layer 146。
In the operation 50 of Figure 1A, refer to Fig. 7 A and Fig. 7 B, form the second recess 150 and run through the remainder 110R of stack layer structure 110, and form the first Multi-layer warming element 151 and the second Multi-layer warming element 154。Specifically, the operation forming the second recess 150 comprises first and second patterning heating material layer 141,142 removing part, and first and second is patterned heating material layer 141,142 disconnection by the second recess 150。Some residual fraction 141a, 142a of first and second patterning heating material layer form the first Multi-layer warming element 151 in the side of the second recess 150, and other some residual fraction 141b, 142b of first and second patterning heating material layer 141,142 form the second Multi-layer warming element 154 at the opposite side of the second recess 150。Second recess 150 is spaced apart with the second Multi-layer warming element 154 by the first Multi-layer warming element 151, first Multi-layer warming element 151 material contact the first conductive contact structure 130。
In some embodiments, the residual fraction 141a of the first patterning heating material layer 141 constitutes the first zone of heating structure 152, the residual fraction 142a of the second patterning heating material layer 142 constitutes the second zone of heating structure 153, and first and second zone of heating structure 152,153 collectively forms the first Multi-layer warming element 151。Similarly, another residual fraction 141b of the first patterning heating material layer 141 constitutes the 3rd zone of heating structure 155, another residual fraction 142b of the second patterning heating material layer 142 constitutes the 4th zone of heating structure 156, and the 3rd and the 4th zone of heating structure 155,156 collectively forms the second Multi-layer warming element 154。First zone of heating structure 152 is between the first pattern dielectric layer 143 and pattern dielectric layer 144, and the second zone of heating structure 153 is between the first pattern dielectric layer 143 and pattern dielectric layer 145。
Some embodiment according to the present invention, in operation 50, is initially formed patterning shade 123 in Fig. 6 B structure illustrated, and patterning shade 123 has an opening corresponding to first and second patterning heating material layer 141,142。Then, it is etched processing procedure, removes the material part of the opening range being arranged in patterning shade 123, and form the second recess 150。The degree of depth of the second recess 150 reaches to run through the degree of depth of the first patterning heating material layer 141 to I haven't seen you for ages, and the length L of the second recess 150 is at least enough to block first and second patterning heating material layer 141,142。Afterwards, patterning shade 123 is removed。
In the operation 60 of Figure 1A, refer to Fig. 8 A and Fig. 8 B, form phase change element 160 in the second recess 150, and phase change element 160 contacts the first Multi-layer warming element 151 and the second Multi-layer warming element 154。For example, can first deposit one layer of phase-change material layer in pattern dielectric layer 145, and fill up the second recess 150。Then, carry out cmp, remove phase-change material layer and be positioned at the part above pattern dielectric layer 145, and obtain the phase change element 160 being filled in the second recess 150。
In some embodiments, phase change element comprises germanium-antimony-tellurium (GST) material, for instance Ge2Sb2Te5、Ge1Sb2Te4、Ge1Sb4Te7Or combinations of the above or similar material。Other phase-transition materials can be such as GeTe, Sb2Te3, GaSb, InSb, Al-Te, Te-Sn-Se, Ge-Sb-Te, In-Sb-Te, Ge-Se-Ga, Bi-Se-Sb, Ga-Se-Te, Sn-Sb-Te, In-Sb-Ge, Te-Ge-Sb-S, Te-Ge-Sn-O, Sb-Te-Bi-Se, Te-Ge-Sn-Au, Pd-Te-Ge-Sn, In-Se-Ti-Co, Ge-Sb-Te-Pd, Ag-In-Sb-Te, Ge-Te-Sn-Pt, Ge-Te-Sn-Ni, Ge-Te-Sn-Pd and Ge-Sb-Se-Te。
Phase change element 160 can because being heated and undergoing phase transition。In phase-change memory operates, electric current is transmitted to phase change element 160 from first conductive contact structure 130, the first zone of heating structure 152 via the first Multi-layer warming element 151 and the second zone of heating structure 153, a part of electric energy can be transformed into heat by first and second zone of heating structure 152,153, produced heat promotes phase change element 160 that the change of phase occurs, such as it is transformed into many crystalline phases (polycrystalline) or crystalline phase (crystalline) from amorphous phase (amorphous), or becomes amorphous phase from many crystalline phases or crystal transition。Phase change element 160 has different resistance values in different crystalline phases, via detecting or the resistance value reading phase change element 160, is just judged the data types of memory cell。
As mentioned before, according to certain embodiments of the invention, the thickness of the first heating material layer 111 and the second heating material layer 112 (being indicated in Fig. 3 B and Fig. 4 B) can be about 2nm to about 40nm, and the thickness of the first heating material layer 111 and the second heating material layer 112 substantially determines first, second, third and the 4th thickness of zone of heating structure 152,153,155,156。If the first heating material layer 111 and the second respective thickness of heating material layer 112 are too thick, for instance more than about 40nm, then the contact area of first and second zone of heating structure 152,153 and phase change element 160 becomes big。When electric current is by the first Multi-layer warming element 151, the electric current density causing first and second zone of heating structure 152,153 is reduced, thus reducing the heats of first and second 152,153 pairs of phase change elements 160 of zone of heating structure, therefore it is unfavorable for the performance of final products。Anti-, if the first heating material layer 111 and the second respective thickness of heating material layer 112 are too thin, such as less than approximately 2nm, then first, second, third and the 4th the contact area of zone of heating structure 152,153,155,156 and phase change element 160 too little, it is possible to cause that the reliability of contact interface is not good。So, according to certain embodiments of the invention, first, second, third and the 4th the thickness of zone of heating structure 152,153,155,156 (or first heating material layer 111 and second heating material layer 112) be about 2nm to about 40nm。
Fig. 8 C illustrates the partial enlarged drawing of the region C in Fig. 8 B, in some embodiment of present embodiment, the sidewall of the first pattern dielectric layer 143 etched in the second recess 150 and the sidewall of pattern dielectric layer 144,145 can be further comprised so that the edge 152a of the first zone of heating structure 152 and edge 153a of the second zone of heating structure 153 protrudes the sidewall of the second recess 150 after forming the second recess 150。Consequently, it is possible to after performing the formation phase change element described in operation 60, the edge 152a of the first zone of heating structure 152 and edge 153a of the second zone of heating structure 153 is just embedded the first side wall 161 of phase change element 160。First zone of heating structure 152 (or second zone of heating structure 153) embeds about 1/5 to about 1/20 that the length DL of phase change element 160 can be the thickness DT of the first zone of heating structure 152 (or second zone of heating structure 153), for instance for about 1/6, about 1/7, about 1/8, about 1/10, about 1/12, about 1/15 or about 1/18。When the sidewall of the edge embedding phase change element of the first and/or second zone of heating structure can improve phase-change memory running, make because of high temperature phase change element 160 produce the problem of the loose contact that deformation causes, further ensure that the reliability that phase change is remembered。
After operation 60, method 1 is selectively included other operations, for instance operation 70, operation 80 and the operation 90 that Figure 1B illustrates。
In operation 70, as shown in Fig. 8 A and Fig. 8 B, form the second dielectric layer 171 and cover the first conductive contact structure 130 and phase change element 160。In some embodiments, be utilize code-pattern whole property of deposition technique form the second dielectric layer 171。Second dielectric layer 171 can be any applicable dielectric material, the dielectric materials such as the such as silica glass of silicon nitride, silicon oxide, doping, second dielectric layer 171 can also be formed by the dielectric material of low-k, for instance phosphosilicate glass (PSG), boron-phosphorosilicate glass (BPSG), fluorine silica glass (FSG), carbofrax material or combinations of the above or similar material。
In operation 80, as shown in Fig. 9 A and Fig. 9 B, form the 3rd recess 180 and run through the second dielectric layer 171 and the second Multi-layer warming element 154。For example, in operation 80, being initially formed patterning shade 124 on the second dielectric layer 171, patterning shade 124 has an opening。Then, it is etched processing procedure, removes the portion of material of the opening range being arranged in patterning shade 124, and form the 3rd recess 180。Afterwards, patterning shade 124 is removed。It is other to all layers between the 3rd zone of heating structure 155 that 3rd recess 180 runs through the second dielectric layer 171。Additionally, the operation forming the 3rd recess 180 also forms the sidewall 155a of the 3rd zone of heating the structure 155 and sidewall 156a of the 4th zone of heating structure 156。Sidewall 155a and sidewall 156a exposes via the 3rd recess 180。
In operation 90, as shown in Figure 10 A and Figure 10 B, form the second conductive contact structure 190 in the 3rd recess 180, make the second conductive contact structure 190 contact the second Multi-layer warming element 154。For accompanying drawing clearly purpose, Figure 10 A does not illustrate the second conductive contact structure 190。In certain embodiments, the second conductive contact structure 190 contacts the sidewall 155a of the 3rd zone of heating the structure 155 and sidewall 156a of the 4th zone of heating structure 156。In certain embodiments, the second conductive contact structure 190 can such as comprising metal material or other metal materials being suitable for of tungsten (W)。In certain embodiments, the second conductive contact structure 190 fills up the 3rd recess 180 and covers at least one of second dielectric layer 171。
The content of the above-mentioned exposure of the present invention provides a kind of phase-change memory 100 simultaneously。Refer to Figure 10 A and Figure 10 B, phase-change memory 100 comprises first conductive contact structure the 130, first Multi-layer warming element the 151, second Multi-layer warming element 154, phase change element 160 and the second conductive contact structure 190。First Multi-layer warming element 151 comprises the first zone of heating structure 152 and the second zone of heating structure 153, and first and second zone of heating structure 152,153 goes up horizontal expansion respectively at various height, and contacts the first side wall 161 of phase change element 160。First conductive contact structure 130 runs through and contacts first and second zone of heating structure 152,153。Second Multi-layer warming element 154 comprises the 3rd zone of heating structure 155 and the 4th zone of heating structure 156, and the 3rd and the 4th zone of heating structure 155,156 goes up horizontal expansion respectively at various height, and contacts the second sidewall 162 of phase change element 160。Second conductive contact structure 190 runs through and contacts the 3rd and the 4th zone of heating structure 155,156。In some embodiments, first and second zone of heating structure 152,153 is horizontal expansion on the first height L1 and the second height L2 respectively, and the horizontal expansion on the first height L1 and the second height L2 respectively of the 3rd and the 4th zone of heating structure 155,156。In other words, the 3rd zone of heating structure 155 and first zone of heating structure 152 horizontal expansion on substantially identical height, the 4th zone of heating structure 156 and second zone of heating structure 153 horizontal expansion on substantially identical height。
Implement aspect 2
Implement aspect 2 and comprise the operation 10-60 implemented described in aspect 1, compared to implementing aspect 1, one of them of enforcement aspect 2 is different in that, implements aspect 2 and has different upper end out lines at the remainder 110R formed in 40 that operates of patterning stack layer structure 110。Figure 11 A illustrates the top view implementing aspect 2 in operation 40 formed structures, and Figure 11 B illustrates the generalized section in Figure 11 A along line segment BB '。In Figure 11 A and Figure 11 B, the same or similar element in enforcement aspect 1 represents with identical component symbol。
In the multiple embodiments implementing aspect 2, first and second patterning heating material layer 141,142 and first pattern dielectric layer 143 has the upper end out line being substantially the same。Specifically, first patterning heating material layer 141 comprises the first wide portion 141x, the second width portion 141y and cervical region 141z, cervical region 141z bridges the first wide portion 141x and the second width portion 141y, and the width W1 of cervical region 141z is less than the width W3 of the width W2 and the second width portion 141y of the first wide portion 141x。Similarly, second patterning heating material layer 142 comprises the first wide portion 142x, the second width portion 142y and cervical region 142z, cervical region 142z bridges the first wide portion 142x and the second width portion 142y, and the width W1 of cervical region 142z is less than the width W3 of the width W2 and the second width portion 142y of the first wide portion 142x。Similarly, first pattern dielectric layer 143 comprises the first wide portion 143x, the second width portion 143y and cervical region 143z, cervical region 143z bridges the first wide portion 143x and the second width portion 143y, and the width W1 of cervical region 143z is less than the width W3 of the width W2 and the second width portion 143y of the first wide portion 143x。
Compared to implementing aspect 1, implement another difference is that of aspect 2, the operation 50 implementing aspect 2 comprises the part removing each cervical region 141z, 142z, 143z, and first and second is patterned heating material layer the 141,142 and first pattern dielectric layer 143 and disconnects。Figure 12 A illustrates this enforcement aspect 2 performing the upper schematic diagram after operation 50 (namely-form the second recess 150) and operation 60 (namely-formation phase change elements 160), and Figure 12 B illustrates the generalized section in Figure 12 A along line segment BB '。
The second recess 150 that operation 50 is formed is a part of overlapping with each cervical region 141z, 142z, 143z's, and therefore operation 50 comprises the part removing each cervical region 141z, 142z, 143z。First and second is patterned heating material layer 141,142 in the position of each cervical region 141z, 142z, 143z and disconnects by the second recess 150, and forms the first Multi-layer warming element 151 and the second Multi-layer warming element 154。Each self-contained width portion 152x, 153x of first and second zone of heating structure 152,153 of first Multi-layer warming element 151 and cervical region 152z, 153z。The width of width portion 152x, 153x width more than cervical region 152z, 153z, wherein cervical region 152z, 153z extends to the first side wall 161 of phase change element 160 from each self-corresponding wide portion 152x, 153x。
In other words, the pattern of first and second zone of heating structure 152,153 of this enforcement aspect 2 is for being similar to " convex " word shape, and the pattern of the the 2nd the 3rd and the 4th zone of heating structure 155,156 is rectangle。Phase change element 160 is filled in the second recess 150。Other details implementing aspect 2 can be identical with enforcement aspect 1。After performing operation 60, implement aspect 2 and be selectively included Figure 1B operation 70, operation 80 and operation 90 illustrated。
Figure 13 A illustrates the upper schematic diagram of the phase-change memory 200 obtained by this enforcement aspect 2, and Figure 13 B illustrates the generalized section of Figure 13 A middle conductor B-B '。In Figure 13 A and Figure 13 B, the same or similar element in enforcement aspect 1 represents with identical component symbol。
Phase-change memory 200 comprises first conductive contact structure the 130, first Multi-layer warming element the 151, second Multi-layer warming element 154, phase change element 160 and the second conductive contact structure 190。First Multi-layer warming element 151 comprises the first zone of heating structure 152 and the second zone of heating structure 153, and the first zone of heating structure 152 and the second zone of heating structure 153 go up horizontal expansion respectively at various height, and contact the first side wall 161 of phase change element 160。First conductive contact structure 130 runs through and contacts first and second zone of heating structure 153。Second Multi-layer warming element 154 comprises the 3rd zone of heating structure 155 and the 4th zone of heating structure 156, and the 3rd zone of heating structure 155 and the 4th zone of heating structure 156 go up horizontal expansion respectively at various height, and contact the second sidewall 162 of phase change element 160。Second conductive contact structure 190 runs through and contacts the 3rd and the 4th zone of heating structure 156。Each self-contained width portion 152x, 153x of first and second zone of heating structure 152,153 of first Multi-layer warming element 151 and cervical region 152z, 153z。The width of width portion 152x, 153x width more than cervical region 152z, 153z, wherein cervical region 152z, 153z extends to the first side wall 161 of phase change element 160 from each self-corresponding wide portion 152x, 153x。
Because the width that the width of cervical region 152z, 153z of first and second zone of heating structure 152,153 is less than width portion 152x, 153x, when electric current is transferred to cervical region 152z, 153z by width portion 152x, 153x, electric current density is improved, so the engagement edge of the first side wall 161 of cervical region 152z, 153z and phase change element 160 has very big electric current density, contribute to allowing phase change element 160 occur crystalline phase to change rapidly such that it is able to improve speed and the reliability of write data。
Implement aspect 3
Figure 14 illustrates phase-change memory 300 generalized section of the enforcement aspect 3 of the present invention。Compared to implementing aspect 1, one of them of enforcement aspect 3 is a difference in that, in the operation 10 forming stack layer structure 110, first heating material layer 111 and the second each self-contained multiple sub-structure being stacked with of heating material layer 112 (being indicated in Fig. 2 B, Fig. 3 B and Fig. 4 B), first, second, third and the 4th each self-contained multiple sub-structure being stacked with of zone of heating structure 152,153,155,156 therefore formed in subsequent operation。Such as, the first zone of heating structure 152 comprises sub-structure 1521,1522,1523, and in sub-structure 1521,1522,1523, the material of two adjacent sub-structure is different each other, makes have resistivity differences between two adjacent sub-structure。In many embodiment, this resistivity differences is about 3 times to about 80 times of the material in these sub-structure with minimum specific resistance, for instance for about 3 times to about 70 times, about 3 times to about 60 times, about 3 times to about 50 times, about 3 times to about 40 times, about 3 times to about 30 times, about 3 times to about 20 times or about 3 times to about 10 times。Resistivity differences between above-mentioned two adjacent sub-structure, allows the interface between two adjacent sub-structure form higher resistivity。When electric current is flowed through first and second zone of heating structure 152,153 by conductive contact structure 130, when being transferred to phase change element 160, more electric current will be limited in the sub-structure of low resistivity, therefore the sub-structure of low-resistivity has bigger electric current density, also therefore produce higher temperature at sub-structure with the interface of phase change element 160, and be conducive to promoting phase change element 160 to occur crystalline phase to change。
Similarly, the second zone of heating structure 153 comprises sub-structure 1531,1532,1533, and in sub-structure 1531,1532,1533, the material of at least two adjacent sub-structure is different each other, makes have a resistivity differences between two adjacent sub-structure。This resistivity differences is about 3 times to about 80 times of the material in these sub-structure with minimum specific resistance, for instance for about 3 times to about 70 times, about 3 times to about 60 times, about 3 times to about 50 times, about 3 times to about 40 times, about 3 times to about 30 times, about 3 times to about 20 times or about 3 times to about 10 times。
In multiple embodiments, the 3rd zone of heating structure 155 comprises sub-structure 1551,1552,1553, and the material of above-mentioned sub-structure 1551,1552,1553 is identical with the material of the sub-structure 1521,1522,1523 of the first zone of heating structure 152 respectively。Additionally, the 4th zone of heating structure 156 comprises sub-structure 1561,1562,1563, the material of above-mentioned sub-structure 1561,1562,1563 is identical with the material of the sub-structure 1531,1532,1533 of the second zone of heating structure 153 respectively。
In some embodiment of this enforcement aspect 3, the material of above-mentioned sub-structure 1521,1522,1523,1531,1532,1533,1551,1552,1553,1561,1562,1563 can comprise the combination of titanium nitride (TiN), tantalum nitride (TaN), titanium (Ti), iridium (Ir), β-titanium (β-Ta), tungsten nitride (WN), tungsten (W), platinum (Pt) or above-mentioned material or similar material independently of one another。For example, the material of sub-structure 1521/1522/1523 can be TaN/TiN/TaN, TiN/TaN/TiN, TiN/Ir/TiN, Ir/TiN/Ir, β-Ta/TiN/ β-Ta, TiN/ β-Ta/TiN, WN/TiN/WN, TiN/WN/TiN, TiN/W/TiN, W/TaN/W, Pt/Ir/Pt or Ir/Pt/Ir。
In some embodiments, first, second, third and the 4th the respective thickness of zone of heating structure 152,153,155,156 can be 2 to 40nm, it is advantageous to 3 to 20nm, more preferably 5 to 10nm。The thickness of the sub-structure in each zone of heating structure may be the same or different。Compared with implementing aspect 1 or implement aspect 2, implement aspect 3 have and implement the first, second, third and the 4th of aspect 1 or 2 same thickness under zone of heating structure 152,153,155,156, phase change element 160 has higher electric current density, is more conducive to promote phase change element 160 to occur crystalline phase to change。
This enforcement aspect 3 first, second, third and the 4th zone of heating structure 152,153,155,156 pattern can with implement aspect 1 or implement aspect 2 same or similar。
Be similar to previously for the content described in Fig. 8 B and Fig. 8 C, this enforcement aspect 3 first, second, third and the 4th the marginal portion of zone of heating structure 152,153,155,156 can embed the first side wall 161 and/or the first side wall 162 of phase change element 160。
Implement aspect 4
Figure 15 A illustrates the flow chart of the method 2 manufacturing phase-change memory according to this enforcement aspect。Method 2 comprises operation 12, operation 22, operation 32, operation 42 and operation 52。In subsequent drawings Figure 16 A to Figure 24 C, accompanying drawing number comprises the accompanying drawing of letter " A ", for instance Figure 16 A, Figure 17 A, Figure 18 A etc. scheme, for upper schematic diagram；Accompanying drawing number comprises the accompanying drawing of primary and secondary " B ", for instance Figure 16 B, Figure 17 B, Figure 18 B etc. scheme, for the generalized section along line segment B-B '；Accompanying drawing number comprises the accompanying drawing of primary and secondary " C ", for instance Figure 18 C, Figure 19 C, Figure 20 C etc. scheme, for the generalized section along line segment C-C '。
In operation 12, forming patterning stacked structure on base material, Figure 16 A to Figure 18 C illustrates the detailed step schematic diagram performing operation 12 of this enforcement some embodiment of aspect。First, as shown in Figure 16 A and Figure 16 B, it is provided that or receive base material 210。Base material 210 comprises the second dielectric layer the 212, first conductive contact structure 214 and substrate 216, and the first conductive contact structure 214 and the second dielectric layer 212 are formed on substrate 216, and the first conductive contact structure 214 runs through the second dielectric layer 212。Base material 210 can comprise doped or undoped Silicon Wafer or quasiconductor upper insulator (SOI) base material or similar semi-conducting material。First conductive contact structure 214 can such as comprising metal material or other metal materials being suitable for of tungsten (W), second dielectric layer 212 can be any applicable dielectric material, the dielectric materials such as the such as silica glass of silicon nitride, silicon oxide, doping, second dielectric layer 212 can also be formed by the dielectric material of low-k, for instance phosphosilicate glass (PSG), boron-phosphorosilicate glass (BPSG), fluorine silica glass (FSG), carbofrax material or combinations of the above or similar material。
In Figure 17 A-Figure 17 B, deposited in sequential the first heating material layer 217, conductive layer 218 and the second heating material layer 219 are on base material 210。Multiple embodiments according to the present invention, the material of conductive layer 218 is different from the material of first and second heating material layer 217,219。The material of the first heating material layer 217 can be such as the combination of titanium nitride (TiN), tantalum nitride (TaN), titanium (Ti), iridium (Ir), β-tantalum (β-Ta), tungsten nitride (WN), platinum (Pt) or similar material or above-mentioned material。The material of conductive layer 218 can such as comprising metal material or other metal materials being suitable for of tungsten (W)。In some embodiments, the material of the second heating material layer 219 can be identical with the first heating material layer 217, but in other embodiments, the material of the second heating material layer 219 can be different from the first heating material layer 217。First and second respective thickness of heating material layer 217,219 is less than the thickness of conductive layer 218。In certain embodiments, first and second respective thickness of heating material layer 217,219 is about 2nm to about 40nm, it is advantageous to about 3nm to about 20nm, more preferably about 5nm to about 10nm。If the thickness of first and second heating material layer 217,219 after patterning is too thick, it is possible to be unfavorable for the performance of final products, but when the thickness of first and second heating material layer 217,219 after patterning is too thin, it is possible to cause that the dose rate of successive process declines。The technology such as such as physical vapour deposition (PVD) processing procedure (PVD), chemical vapor deposition process (CVD), plasma enhanced chemical vapor (PECVD), ald processing procedure (ALD) and/or atomic layer chemical vapor deposition processing procedure (ALCVD) can be used to form the first heating material layer 217, conductive layer 218 and the second heating material layer 219。
In Figure 18 A-Figure 18 C, the first heating material layer 217, conductive layer 218 and the second heating material layer 219 are patterned processing procedure, and form patterning stacked structure 220。Patterning stacked structure 220 comprises the first patterning heating material layer 230, second and patterns heating material layer 240 and patterned conductive layer 250。Patterned conductive layer 250 is interposed between first and second patterning heating material layer 230,240。In multiple embodiments, the first patterning heating material layer 230, second patterns heating material layer 240 and patterned conductive layer 250 generally has identical upper end out line。For example, patterning shade 221 can be initially formed on the second heating material layer 219, the pattern of patterning shade 221 definition patterning stacked structure 220, then it is etched processing procedure, remove and be not patterned the material that shade 221 covers, and form patterning stacked structure 220。Specifically, the first patterning heating material layer 230 comprises the first wide portion 230x, the second wide portion 230y and the first narrow portion 230z。Similarly, the second patterning heating material layer 240 comprises the first wide portion 240x, the second wide portion 240y and the first narrow portion 240z。Similarly, patterned conductive layer 250 comprises the first wide portion 250x, the second wide portion 250y and the first narrow portion 250z。First narrow portion 230z of the first patterning heating material layer 230 bridges the first wide portion 230x and the second width portion 230y。First narrow portion 240z of the second patterning heating material layer 240 bridges the first wide portion 240x and the second width portion 240y。First narrow portion 250z of patterned conductive layer 250 bridges the first wide portion 250x and the second width portion 250y。In some embodiments, first patterning heating material layer the 230, second patterning heating material layer 240 and patterned conductive layer 250 also comprise the second narrow portion 230w, the second narrow portion 240w and the second narrow portion 250w respectively。Each self-corresponding first wide portion and the second width portion is bridged from each second narrow portion 230w, 240w, 250w。In some embodiments, the width D 4 of width D 3 more than the first narrow portion 230z (and/or 240z, 250z) of the width D 1 in the first width portion 230x (and/or 240x, 250x) and the width D 2 in the second width portion 230y (and/or 240y, 250y) and/or the second narrow portion 230w (and/or 240w, 250w)。In one embodiment, the pattern patterning stacked structure 220 is the rectangle with opening 220a。
In the operation 22 of Figure 15 A, referring to Figure 18 A-Figure 18 C and Figure 19 A-Figure 19 C, remove the first narrow portion 250z of patterned conductive layer 250, and remove the first wide portion 250x and the second width portion respective part of 250y of patterned conductive layer 250, and form the first conductive structure 261 and the second conductive structure 265 (being shown in Figure 19 A and Figure 19 B) separated from one another。In more detail, in some embodiments, use wet etch process, and select the etchant that patterned conductive layer 250 is had high selectivity, Figure 18 A-Figure 18 C structure illustrated is etched, removes the patterned conductive layer 250 of part from the sidewall direction of patterned conductive layer 250。Owing to the characteristic size of the first narrow portion 250z of patterned conductive layer 250 is less, so can be completely removed in wet etch process。On the other hand, the characteristic size of the first wide portion 250x and the second width portion 250y of patterned conductive layer 250 is bigger, so will not all be removed, and the residual fraction of the first wide portion 250x and the second wide portion 250y forms the first conductive structure 261 and the second conductive structure 265 respectively。When patterned conductive layer 250 comprises the second narrow portion 250w, the second narrow portion 250w also can be completely removed, and the first conductive structure 261 therefore formed and the second conductive structure 265 are separated from one another, as shown in Figure 19 A and Figure 19 B。
First conductive structure 261 is interposed between the first width portion 240x of the first wide portion 230x and the second patterning heating material layer 240 of the first patterning heating material layer 230, and the second conductive structure 265 is interposed between the second width portion 240y of the second wide portion 230y and the second patterning heating material layer 240 of the first patterning heating material layer 230。Additionally, the characteristic size D5 of the first conductive structure 261 patterns the characteristic size D6 in the first width portion 230x (and/or 240x) of heating material layer 230 (and/or second patterning heating material layer 240) less than first。In like manner, the characteristic size D7 of the second conductive structure 265 patterns the characteristic size D8 in the second width portion 230y (and/or 240y) of heating material layer 230 (and/or second patterning heating material layer 240) less than first。Please note, owing to the first narrow portion 250z and/or the second narrow portion 250w of patterned conductive layer 250 are all removed, and the size reduction of the first wide portion 250x and the second width portion 250y, so in the position of C-C ' hatching (as shown in fig. 19 c), the patterned conductive layer 250 of also noresidue between the first patterning heating material layer 230 and the second patterning heating material layer 240。After performing operation 22, it is possible to optionally remove patterning shade 221。
In the operation 32 of Figure 15 A, refer to Figure 20 A-Figure 20 C, form the first dielectric layer 270 and cover first and second patterning heating material layer 230,240 and first and second conductive structure 261,265。First dielectric layer 270 can be any applicable dielectric material, the dielectric materials such as the such as silica glass of silicon nitride, silicon oxide, doping, first dielectric layer 270 can also be formed by the dielectric material of low-k, for instance phosphosilicate glass (PSG), boron-phosphorosilicate glass (BPSG), fluorine silica glass (FSG), carbofrax material or combinations of the above or similar material。The technology such as physical vapour deposition (PVD) processing procedure (PVD), chemical vapor deposition process (CVD), plasma enhanced chemical vapor (PECVD), ald processing procedure (ALD) and/or atomic layer chemical vapor deposition processing procedure (ALCVD) can be used to form the first dielectric layer 270。
In the operation 42 of Figure 15 A, refer to Figure 21 A-Figure 21 C, remove first and second patterning respective first narrow portion 230z of heating material layer 230,240, a part of 240z and remove the part of the first dielectric layer 270, and forming the first recess 274 and block each first narrow portion 230z, 240z。When first and second patterning heating material layer 230,240 each also comprises the second narrow portion 230w, 240w, operation 42 also can remove a part of the second narrow portion 230w, 240w, and the first recess 274 also can block the second narrow portion 230w, 240w。For example, patterning shade 222 can be initially formed on the first dielectric layer 270, patterning shade 222 has the opening position corresponding to the first narrow portion 230z, 240z and/or the second narrow portion 230w, 240w, then processing procedure it is etched, remove the portion of material in the opening range of patterning shade 222, and form the first recess 274。The degree of depth of the first recess 274 is at least enough to run through the first patterning heating material layer 230, and the length E1 of the first recess 274 is at least enough to block the first narrow portion 230z, 240z and/or the second narrow portion 230w, 240w。Afterwards, patterning shade 222 is removed。
In some embodiments, the remainder 240a of remainder 230a and the second patterning heating material layer 240 of the first patterning heating material layer 230 respectively constitutes the first zone of heating structure 231 and the second zone of heating structure 242。In certain embodiments, the first zone of heating structure 231 is positioned on the first conductive contact structure 214。Additionally, another remainder 240b of another remainder 230b and second patterning heating material layer 240 of the first patterning heating material layer 230 respectively constitutes the 3rd zone of heating structure 233 and the 4th zone of heating structure 244。First and second zone of heating structure 231,242 is positioned at the side of the first recess 274, and the 3rd and the 4th zone of heating structure 233,244 is positioned at the other side of the first recess 274。First zone of heating structure the 231, second zone of heating structure 242 and the first conductive structure 261 collectively form the first Multi-layer warming element 281。Additionally, the 3rd zone of heating structure the 233, the 4th zone of heating structure 244 and the second conductive structure 265 collectively form the second Multi-layer warming element 285。In one embodiment, the first recess 274 further extends in the second dielectric layer 212。
In the operation 52 of Figure 15 A, refer to Figure 22 A-Figure 22 C, form phase change element 290 in the first recess 274。For example, can first deposit one layer of phase-change material layer on the first dielectric layer 270, and fill up the first recess 274。Then, carry out cmp, remove phase-transition material and be deposited upon the part above the first dielectric layer 270, and obtain the phase change element 290 being filled in the first recess 274。Phase change element 290 contacts the first zone of heating structure the 231, second zone of heating structure the 242, the 3rd zone of heating structure 233 and the 4th zone of heating structure 244。The material of phase change element 290 can be identical with aforementioned enforcement aspect。
In some embodiment of this enforcement aspect, after performing formation the first recess 274 described in operation 40, can further comprise the sidewall of the first dielectric layer 270 etched in the first recess 274 and the sidewall of the second dielectric layer 212, make a marginal portion of at least one in first and second zone of heating structure 231,242 protrude the sidewall of the second dielectric layer 212 (being indicated in Figure 21 C) and the sidewall of the first dielectric layer 270。Thus, after performing the formation phase change element described in operation 50, the edge of the first zone of heating structure 231 and/or the second zone of heating structure 242 is just embedded the sidewall of phase change element 290, other details or feature, refer to described in Fig. 8 C previously for enforcement aspect 1。
After operation 52, method 2 is selectively included other operations, for instance operation 62, operation 72 and the operation 82 that Figure 15 B illustrates。
In operation 62, as shown in Figure 22 A-Figure 22 C, form the 3rd dielectric layer 271 and cover phase change element 290 and the first dielectric layer 270。In some embodiments, be utilize code-pattern whole property of deposition technique form the 3rd dielectric layer 271。3rd dielectric layer 271 can be any applicable dielectric material, the dielectric materials such as the such as silica glass of silicon nitride, silicon oxide, doping, 3rd dielectric layer 271 can also be formed by the dielectric material of low-k, for instance phosphosilicate glass (PSG), boron-phosphorosilicate glass (BPSG), fluorine silica glass (FSG), carbofrax material or combinations of the above or similar material。
In operation 72, as shown in Figure 23 A-Figure 23 C, forming the second recess 277 in the 3rd dielectric layer 271 and the first dielectric layer 270, the second recess 277 exposes the second width portion 240y of the second patterning heating material layer 240。For example, in operation 72, being initially formed patterning shade 223 on the 3rd dielectric layer 271, patterning shade 223 has an opening。Then, it is etched processing procedure, removes the portion of material of the opening range being arranged in patterning shade 223, and form the second recess 277 and expose the second width portion 240y of the second patterning heating material layer 240。
In operation 82, as shown in Figure 24 A-Figure 24 C, form the second conductive contact 294 structure in the second recess 277, make the second conductive contact 294 form touch second pattern the second width portion 240y of heating material layer 240。In certain embodiments, the second conductive contact structure 294 can such as comprising metal material or other metal materials being suitable for of tungsten (W)。In certain embodiments, the second conductive contact structure 294 fills up the second recess 277, and covers the 3rd dielectric layer 271 of a part。
The content of the above-mentioned exposure of the present invention provides a kind of phase-change memory 400 simultaneously。Refer to Figure 24 A-Figure 24 C, phase-change memory 400 comprises the first Multi-layer warming element the 281, second Multi-layer warming element 285 and phase change element 290。Phase change element 290 has the first side wall 291 and the second sidewall 292。First Multi-layer warming element 281 comprises the first zone of heating structure the 231, second zone of heating structure 242 and the first conductive structure 261, and the first conductive structure 261 is interposed between the first zone of heating structure 231 and the second zone of heating structure 242。First zone of heating structure 231 and the second zone of heating structure 242 go up horizontal expansion respectively at various height。First zone of heating structure 231 comprises the first side wall 291 that wide portion 231x and the first narrow portion 231z, the first narrow portion 231z are extended by wide portion 231x and contact phase change element 290。Second Multi-layer warming element 285 comprises the 3rd zone of heating structure the 233, the 4th zone of heating structure 244 and the second conductive structure 265。Second conductive structure 265 is interposed between the 3rd and the 4th zone of heating structure 233,244。3rd zone of heating structure 233 and the 4th zone of heating structure 244 go up horizontal expansion respectively at various height, and contact the second sidewall 292 of phase change element 290。In some embodiments, the first zone of heating structure 231 also comprises the second narrow portion 231w, and the second narrow portion 231w is extended by wide portion 231x and contacts the first side wall 291 of phase change element 290。In one embodiment, the width E3 of the width E2 and the first narrow portion 231z of the second narrow portion 231w is substantially the same。
Phase change element 290 can because being heated and undergoing phase transition。In phase-change memory operates, electric current is transmitted to phase change element 290 from the first zone of heating structure 231 and the second zone of heating structure 242 of the first Multi-layer warming element 281, a part of electric energy can be transformed into heat by first and second zone of heating structure 231,242, produced heat promotes phase change element 290 that the change of phase occurs, such as it is transformed into many crystalline phases (polycrystalline) or crystalline phase (crystalline) from amorphous phase (amorphous), or becomes amorphous phase from many crystalline phases or crystal transition。Phase change element 290 has different resistance values in different crystalline phases, via detecting or the resistance value reading phase change element 290, is just judged the data types of memory cell。
Because the summation of the wide E2 of the width E4 of the wide portion 231x of the first zone of heating structure width E3 more than the first narrow portion 231z and the second narrow portion 231w, when electric current is transferred to the first narrow portion 231z and the second narrow portion 231w by wide portion 231x, the electric current density of the first narrow portion 231z and the second narrow portion 231w is improved, so the engagement edge of the first side wall 291 of the first narrow portion 231z and the second narrow portion 231w and phase change element 290 has very big electric current density, contribute to allowing phase change element 290 occur crystalline phase to change rapidly such that it is able to improve speed and the reliability of write data。
In additionally some embodiment, the second zone of heating structure 242 and the first zone of heating structure 231 have the upper end out line being substantially the same, and therefore the second zone of heating structure 242 also comprises wide portion 242x, the first narrow portion 242z and the second narrow portion 242w。The first narrow portion 242z and the second narrow portion 242w of the second zone of heating structure 242 is extended to the first side wall 291 of phase change element 290 by wide portion 242x。Therefore, in phase-change memory 400, the first narrow portion 231z and the second narrow portion 231w of the first zone of heating structure 231 and the first narrow portion 242z and the second narrow portion 242w of the second zone of heating structure 242 contact the first side wall 291 of phase change element 290, so the first Multi-layer warming element 281 always has 4 contact points with phase change element 290, when wherein one or two or three contact points inefficacies, phase-change memory 400 still can operate。
Multiple embodiments according to this enforcement aspect, the area of the first conductive structure 261 is less than the area of the first zone of heating structure 231 area and the second zone of heating structure 242, so the first conductive structure 261 not in direct contact phase change element 290。
In many embodiment, horizontal expansion in first zone of heating structure 231 of the first Multi-layer warming element 281 and the substantially identical height of the 3rd zone of heating structure 233 of the second Multi-layer warming element 285, and horizontal expansion on substantially identical another height of the 4th zone of heating structure 244 of the second zone of heating structure 242 of the first Multi-layer warming element 281 and the second Multi-layer warming element 285。
Implement aspect 5
Figure 25 and Figure 26 illustrates phase-change memory 500 generalized section of the enforcement aspect 5 of the present invention, and the hatching of Figure 25 and Figure 26 can be such as the line segment B-B ' along Figure 24 C and line segment C-C '。Compared to implementing aspect 4, one of them of this enforcement aspect is a difference in that, in forming patterning stacked structure 220 described in operation 12, first patterning heating material layer 230 and second patterning heating material layer 240 (being indicated in Figure 18 B and Figure 18 C) each self-contained multiple sub-structure being stacked with, first, second, third and the 4th each self-contained multiple sub-structure being stacked with of zone of heating structure 231,242,233,244 therefore formed in subsequent operation。Such as, the first zone of heating structure 231 comprises sub-structure 2311,2312,2313, and in sub-structure 2311,2312,2313, the material of two adjacent sub-structure is different each other, makes have resistivity differences between two adjacent sub-structure。In many embodiment, this resistivity differences is about 3 times to about 80 times of the material in these sub-structure with minimum specific resistance, for instance for about 3 times to about 70 times, about 3 times to about 60 times, about 3 times to about 50 times, about 3 times to about 40 times, about 3 times to about 30 times, about 3 times to about 20 times or about 3 times to about 10 times。Resistivity differences between above-mentioned two adjacent sub-structure, allows the interface between two adjacent sub-structure form higher resistivity。
Similarly, the second zone of heating structure 242 comprises sub-structure 2421,2422,2423, and in sub-structure 2421,2422,2423, the material of at least two adjacent sub-structure is different each other, makes have a resistivity differences between two adjacent sub-structure。This resistivity differences is about 3 times to about 80 times of the material in these sub-structure with minimum specific resistance, for instance for about 3 times to about 70 times, about 3 times to about 60 times, about 3 times to about 50 times, about 3 times to about 40 times, about 3 times to about 30 times, about 3 times to about 20 times or about 3 times to about 10 times。When electric current is flowed through first and second zone of heating structure 231,242 by conductive contact structure 214, when being transferred to phase change element 290, more electric current will be limited in the sub-structure of low resistivity, therefore the sub-structure of low-resistivity has bigger electric current density, also therefore produce higher temperature at sub-structure with the interface of phase change element 290, and be conducive to promoting phase change element 160 to occur crystalline phase to change。
In multiple embodiments, the 3rd zone of heating structure 233 comprises sub-structure 2331,2332,2333, and the material of above-mentioned sub-structure 2331,2332,2333 is identical with the material of the sub-structure 2311,2312,2313 of the first zone of heating structure 231 respectively。Additionally, the 4th zone of heating structure 244 comprises sub-structure 2441,2442,2443, the material of above-mentioned sub-structure 2441,2442,2443 is identical with the material of the sub-structure 2421,2422,2423 of the second zone of heating structure 242 respectively。
Material in the above-mentioned sub-structure 2311,2312,2313,2421,2422,2423,2331,2332,2333,2441,2442,2443 of this enforcement aspect 5 can be identical with previously for what implement described in aspect 3。In some embodiments, first, second, third and the 4th the respective thickness of zone of heating structure 231,242,233,244 can be 2 to 40nm, it is advantageous to 3 to 20nm, more preferably 5 to 10nm。The thickness of the sub-structure in each zone of heating structure may be the same or different。
Implement aspect 6
Figure 27 A illustrates the upper schematic diagram of the phase-change memory 600 of this enforcement aspect 6, and Figure 27 B illustrates the generalized section in Figure 27 A along C-C' line segment。In Figure 27 A and Figure 27 B, the same or similar element in enforcement aspect 4 or enforcement aspect 5 represents with identical component symbol。
Referring to Figure 27 A and Figure 27 B, phase-change memory 600 comprises the first conductive contact structure 214, Multi-layer warming element 286, phase change element 290 and the second conductive contact structure 294。Multi-layer warming element 286 is electrically connected the first conductive contact structure 214。Multi-layer warming element 286 comprises the first zone of heating structure the 231, second zone of heating structure 242 and the first conductive structure 261。First conductive structure 261 is interposed between the first zone of heating structure 231 and the second zone of heating structure 242。First zone of heating structure 231 and the second zone of heating structure 242 go up horizontal expansion respectively at various height。First zone of heating structure 231 comprises wide portion 231x, the first narrow portion 231z and the second narrow portion 231w, the first narrow portion 231z and the second narrow portion 231w and is extended by width portion 231x。Phase change element 290 has sidewall 291, sidewall 291 material contact the first narrow portion 231z and the second narrow portion 231w。Second conductive contact structure 294 is configured at above phase change element 290。The end face of phase change element 290 directly contacts the second conductive contact structure 294。
In some embodiments, the second zone of heating structure 242 also comprises wide portion 242x, one first narrow portion 242z and one second narrow portion 242w, the first narrow portion 242z and the second narrow portion 242w and is extended by width portion 242x。In many embodiment, the first zone of heating structure 231 and the second zone of heating structure 242 have the upper end out line being substantially the same。
As mentioned before, first zone of heating structure 231 of this enforcement aspect 6 and/or the second zone of heating structure 242 comprise width portion 231x, 242x, first narrow portion 231z, 242z and the second narrow portion 231w, 242w, because width portion 231x, the width E5 of 242x is more than the first narrow portion 231z, the width E6 and the second narrow portion 231w of 242z, the summation of the width E7 of 242w, when electric current is by width portion 231x, 242x is transferred to the first narrow portion 231z, 242z and the second narrow portion 231w, during 242w, first narrow portion 231z, 242z and the second narrow portion 231w, 242w and the engagement edge of phase change element can provide bigger electric current density, contribute to allowing phase change element 290 occur crystalline phase to change rapidly, it is thus possible to improve speed and the reliability of write data。In addition, owing to having four contact points between Multi-layer warming element 286 and phase change element 290, therefore, when wherein one or two or three contact point loose contacts, electric current still has other contact point as conductive path, phase-change memory can be made can to maintain normal running。
Being similar to enforcement aspect 5, in the embodiment implementing aspect 6, the first zone of heating structure 231 comprises the multiple sub-structure 2311/2312/2313 being stacked with, and the second zone of heating structure 242 comprises the multiple sub-structure 2421/2422/2423 being stacked with。The material of above-mentioned each sub-structure, thickness and other feature or functions can be identical with previously for the content implemented described in aspect 3。
It is similar to previously for the content described in Fig. 8 C, in another embodiment implementing aspect 6, first narrow portion 231z, the 242z of first and second zone of heating structure 231,242 above-mentioned and the second narrow portion 231w, 242w can embed the sidewall 160b of phase change element 160, first narrow portion 231z, 242z and the second narrow portion 231w, 242w embed the length of sidewall 291 and other details or feature, can be identical with the content described previously for 8C figure。
Although the present invention is disclosed above to implement aspect; so it is not limited to the present invention, any is familiar with this those skilled in the art, without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations, therefore protection scope of the present invention ought be as the criterion depending on the scope that appending claims defines。
Claims (22)
1. the method manufacturing phase-change memory, it is characterised in that comprise following operation:
Forming a pile laminated construction on a base material, this stack layer structure comprises one first heating material layer, one second heating material layer and one first dielectric layer and is located between this first heating material layer and this second heating material layer；
Form one first recess and run through this stack layer structure；
Form one first conductive contact structure in this first recess, make this first conductive contact structure contact this first heating material layer and this second heating material layer；
Pattern this stack layer structure, the remainder making this stack layer structure forms one first patterning heating material layer, one second patterning heating material layer and one first pattern dielectric layer and is located between this first patterning heating material layer and this second patterning heating material layer, and wherein this first patterning heating material layer and this second patterning heating material layer contact this first conductive contact structure；
Form one second recess and run through this remainder of this stack layer structure, this first patterning heating material layer and this second patterning heating material layer are disconnected by this second recess, wherein the residual fraction of this first patterning heating material layer and this second patterning heating material layer forms one first Multi-layer warming element and one second Multi-layer warming element respectively in the both sides of this second recess, and wherein this first Multi-layer warming element contacts this first conductive contact structure；And
Form a phase change element in this second recess, and this phase change element contacts this first Multi-layer warming element and this second Multi-layer warming element。
2. the method manufacturing phase-change memory as claimed in claim 1, it is characterised in that also comprise following operation:
Form one second dielectric layer and cover this first conductive contact structure and this phase change element；
Form one the 3rd recess and run through this second dielectric layer and this second Multi-layer warming element；And
Form one second conductive contact structure in the 3rd recess, make this second conductive contact structure contact this second Multi-layer warming element。
3. the method manufacturing phase-change memory as claimed in claim 1, it is characterized in that, this stack layer structure also comprises one the 3rd dielectric layer and one the 4th dielectric layer, and the 3rd dielectric layer is folded between this base material and this first dielectric layer, and the 4th dielectric layer is positioned on this second heating material layer。
4. the method manufacturing phase-change memory as claimed in claim 3, it is characterized in that, after forming this second recess, also comprise: a sidewall of the sidewall of this first dielectric layer, a sidewall of the 3rd dielectric layer and the 4th dielectric layer that etch in this second recess, make an edge of this first Multi-layer warming element protrude this sidewall of this sidewall of this first dielectric layer, this sidewall of the 3rd dielectric layer and the 4th dielectric layer。
5. the method manufacturing phase-change memory as claimed in claim 1, it is characterized in that, in the operation patterning this stack layer structure, this first patterning heating material layer and this second patterning each self-contained one first wide portion of heating material layer, one second wide portion and a cervical region, respectively each this first wide portion self-corresponding of this neck bridge and this second width portion, and a width in the width of each this cervical region width less than each this first wide portion self-corresponding and this second wide portion。
6. the method manufacturing phase-change memory as claimed in claim 5, it is characterised in that the operation forming this second recess comprises the part removing respectively this cervical region, and disconnects this first patterning heating material layer and this second patterning heating material layer。
7. the method manufacturing phase-change memory as claimed in claim 1, it is characterized in that, run through in the operation of this remainder of this stack layer structure at this second recess of formation, one remainder of this first patterning heating material layer and a remainder of this second patterning heating material layer form one first zone of heating structure and the one second zone of heating structure of this first Multi-layer warming element respectively, and another remainder of another remainder of this first patterning heating material layer and this second patterning heating material layer forms one the 3rd zone of heating structure and one the 4th zone of heating structure of this second Multi-layer warming element respectively。
8. the method manufacturing phase-change memory, it is characterised in that comprise following operation:
I () forms a patterning stacked structure on a base material, wherein this patterning stacked structure comprise one first patterning heating material layer, one second patterning heating material layer and a patterned conductive layer be interposed in this first patterning heating material layer and this second patterning heating material layer between, wherein this first patterning heating material layer, this second patterning heating material layer and each self-contained one first wide portion of this patterned conductive layer, one second wide portion and one first narrow portion, respectively this first narrow portion bridges each this first wide portion self-corresponding and this second width portion；
(ii) this first narrow portion of this patterned conductive layer is removed, and remove this first wide portion and this respective part in the second width portion of this patterned conductive layer, to form one first conductive structure separated from one another and one second conductive structure, wherein this first conductive structure is interposed between this first wide portion of this first patterning heating material layer and this first width portion of this second patterning heating material layer, and this second conductive structure is interposed between this second wide portion of this first patterning heating material layer and this second width portion of this second patterning heating material layer；
(iii) form one first dielectric layer and cover this first patterning heating material layer and this second patterning heating material layer and this first conductive structure and this second conductive structure；
(iv) remove a part for respectively this first narrow portion of this first patterning heating material layer and this second patterning heating material layer and remove a part for this first dielectric layer, and forming one first recess blocking respectively this first narrow portion；And
V () forms a phase change element in this first recess。
9. the method manufacturing phase-change memory as claimed in claim 8, it is characterised in that also comprise following operation:
Form one the 3rd dielectric layer and cover this phase change element and this first dielectric layer；
Forming one second recess in the 3rd dielectric layer and this first dielectric layer, this second recess exposes this second width portion of this second patterning heating material layer；And
Form one second conductive contact structure in this second recess, make this second conductive contact structure contact this second width portion of this second patterning heating material layer。
10. the method manufacturing phase-change memory as claimed in claim 8, it is characterized in that, in operation (iv), one remainder of this first patterning heating material layer and a remainder of this second patterning heating material layer form one first zone of heating structure and one second zone of heating structure respectively, and another remainder of another remainder of this first patterning heating material layer and this second patterning heating material layer forms one the 3rd zone of heating structure and one the 4th zone of heating structure respectively, wherein this first zone of heating structure and this second zone of heating structure are positioned at the side of this first recess, and the 3rd zone of heating structure and the 4th zone of heating structure be positioned at the opposite side of this first recess。
11. the method manufacturing phase-change memory as claimed in claim 10, it is characterised in that in operation (iv), this first recess further extends in this second dielectric layer。
12. right wants the method manufacturing phase-change memory as described in 11, it is characterized in that, after operation (iv), also comprise: etch a sidewall of this first dielectric layer in this first recess and a sidewall of this second dielectric layer, make a marginal portion of at least one in this first zone of heating structure and this second zone of heating structure protrude this sidewall of this second dielectric layer and this sidewall of this first dielectric layer。
13. the method manufacturing phase-change memory as claimed in claim 8, it is characterized in that, in operation (i), this the first patterning heating material layer, this second patterning heating material layer and this patterned conductive layer each also comprise one second narrow portion, respectively this second narrow portion bridges each this first wide portion self-corresponding and this second width portion, and wherein operation (iv) also comprises the part removing respectively this second narrow portion of this first patterning heating material layer and the second patterning heating material layer, and form this first recess。
14. a phase-change memory, it is characterised in that comprise:
One first conductive contact structure；
One phase change element, has the first side wall one and one second sidewall；
One first Multi-layer warming element, it is electrically connected this first conductive contact structure, wherein this first Multi-layer warming element comprises one first zone of heating structure, one second zone of heating structure and one first conductive structure, this first conductive structure is interposed between this first zone of heating structure and this second zone of heating structure, this first side wall of this first zone of heating structure and this second zone of heating this phase change element of form touch；
And
One second conductive contact structure, is configured at above this phase change element。
15. phase-change memory as claimed in claim 14, it is characterised in that this second conductive contact structure directly contacts this phase change element。
16. phase-change memory as claimed in claim 14, it is characterized in that, also comprise one second Multi-layer warming element, wherein this second Multi-layer warming element comprises one the 3rd zone of heating structure, one the 4th zone of heating structure and one second conductive structure, this second conductive structure is interposed between the 3rd zone of heating structure and the 4th zone of heating structure, this second sidewall of 3rd zone of heating structure and the 4th zone of heating this phase change element of form touch, this second conductive contact structure is electrically connected this second Multi-layer warming element。
17. phase-change memory as claimed in claim 16, it is characterized in that, this first conductive contact structure runs through and contacts this first zone of heating structure and this second zone of heating structure, and this second conductive contact structure runs through and contacts the 3rd zone of heating structure and the 4th zone of heating structure。
18. phase-change memory as claimed in claim 17, it is characterized in that, this the first zone of heating structure and this second zone of heating structure be horizontal expansion on one first height and one second height respectively, and the horizontal expansion on this first height and this second height respectively of the 3rd zone of heating structure and the 4th zone of heating structure。
19. phase-change memory as claimed in claim 14, it is characterized in that, this the first zone of heating structure and each self-contained wide portion of this second zone of heating structure, one first narrow portion, and a width in each this wide portion is more than a width of respectively this first narrow portion, this first narrow portion is extended by this width portion and contacts this first side wall of this phase change element。
20. phase-change memory as claimed in claim 19, it is characterised in that this first zone of heating structure and this second zone of heating structure each also comprise one second narrow portion, and this second narrow portion is extended by this width portion and contacts this first side wall of this phase change element。
21. phase-change memory as claimed in claim 14, it is characterized in that, this the first zone of heating structure and this second zone of heating structure at least one of which comprise the multiple sub-structure being stacked with, and two the material of adjacent described sub-structure different each other, allow and there is a resistivity differences between the material of described two adjacent sub-structure。
22. phase-change memory as claimed in claim 14 a, it is characterised in that marginal portion of this first zone of heating structure and this second zone of heating structure at least one of which embeds this first side wall of this phase change element。
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610168967.XA CN105702858B (en) | 2016-03-23 | 2016-03-23 | Phase-change memory and its manufacturing method |
| CN201810068238.6A CN108110139B (en) | 2016-03-23 | 2016-03-23 | Phase change memory and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610168967.XA CN105702858B (en) | 2016-03-23 | 2016-03-23 | Phase-change memory and its manufacturing method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810068238.6A Division CN108110139B (en) | 2016-03-23 | 2016-03-23 | Phase change memory and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105702858A true CN105702858A (en) | 2016-06-22 |
| CN105702858B CN105702858B (en) | 2018-05-25 |
Family
ID=56232540
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610168967.XA Active CN105702858B (en) | 2016-03-23 | 2016-03-23 | Phase-change memory and its manufacturing method |
| CN201810068238.6A Active CN108110139B (en) | 2016-03-23 | 2016-03-23 | Phase change memory and manufacturing method thereof |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810068238.6A Active CN108110139B (en) | 2016-03-23 | 2016-03-23 | Phase change memory and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN105702858B (en) |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100448908B1 (en) * | 2002-09-03 | 2004-09-16 | 삼성전자주식회사 | Phase-changeable memory device structure and method for fabricating the same |
| KR100491978B1 (en) * | 2003-04-12 | 2005-05-27 | 한국전자통신연구원 | Phase change memory element capable of low power operation and method for fabricating the same |
| KR100568109B1 (en) * | 2003-11-24 | 2006-04-05 | 삼성전자주식회사 | Phase change memory devices and methods of forming the same |
| US20060273297A1 (en) * | 2005-06-07 | 2006-12-07 | Thomas Happ | Phase change memory cell having ring contacts |
| CN100578834C (en) * | 2006-08-31 | 2010-01-06 | 财团法人工业技术研究院 | Phase variation storage installation and its making method |
| US7579616B2 (en) * | 2007-04-10 | 2009-08-25 | International Business Machines Corporation | Four-terminal programmable via-containing structure and method of fabricating same |
| CN101286546A (en) * | 2007-04-13 | 2008-10-15 | 财团法人工业技术研究院 | Phase changeable storage device and its making method |
| CN101373814A (en) * | 2007-08-22 | 2009-02-25 | 财团法人工业技术研究院 | Phase variation memory and manufacturing method thereof |
| US20090189140A1 (en) * | 2008-01-25 | 2009-07-30 | Industrial Technology Research Institute | Phase-change memory element |
| KR101026603B1 (en) * | 2008-09-18 | 2011-04-04 | 주식회사 하이닉스반도체 | Method of manufaturing Phase Change RAM |
| CN103022347B (en) * | 2011-09-27 | 2016-03-09 | 中芯国际集成电路制造(北京)有限公司 | Semiconductor device and manufacture method thereof |
| CN105226181A (en) * | 2015-09-01 | 2016-01-06 | 宁波时代全芯科技有限公司 | Phase-change memory and manufacture method thereof |
-
2016
- 2016-03-23 CN CN201610168967.XA patent/CN105702858B/en active Active
- 2016-03-23 CN CN201810068238.6A patent/CN108110139B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN105702858B (en) | 2018-05-25 |
| CN108110139B (en) | 2021-11-19 |
| CN108110139A (en) | 2018-06-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI427743B (en) | Resistance variable memory cell structures and methods | |
| CN102124565B (en) | Memory devices and methods of forming the same | |
| JP5431701B2 (en) | Multi-level memory device and operation method thereof | |
| US8525144B2 (en) | Programmable via devices | |
| TW201735270A (en) | Semiconductor memory devices and methods of manufacturing the same | |
| TW200908224A (en) | Phase change memory device and method of fabricating the same | |
| JP2013232480A (en) | Semiconductor device and method of manufacturing the same | |
| KR101143485B1 (en) | Phase Change Random Access Memory And Fabricating The Same | |
| CN105261630B (en) | The method for manufacturing phase-change memory | |
| US7989920B2 (en) | Phase change memory | |
| CN105098071B (en) | The method for manufacturing phase-change memory | |
| US10833267B2 (en) | Structure and method to form phase change memory cell with self- align top electrode contact | |
| CN105702858A (en) | Phase-change memory and manufacturing method thereof | |
| CN105428524B (en) | The method for manufacturing phase-change memory | |
| CN105336851B (en) | The manufacture method of phase-change memory structure | |
| CN108123035B (en) | Phase change memory | |
| CN105405971B (en) | Phase-change memory and its manufacture method | |
| CN105742488B (en) | Phase-change memory and the method for manufacturing phase-change memory | |
| CN105789437B (en) | The method for manufacturing phase-change memory | |
| CN105489759B (en) | Phase-change memory and its manufacture method | |
| CN105261701B (en) | The method for manufacturing phase-change memory | |
| KR20060065919A (en) | Phase-change memory device and method for manufacturing the same | |
| CN105428529A (en) | Phase change memory and manufacturing method thereof | |
| CN113270545A (en) | Phase change memory and manufacturing method thereof | |
| KR20070060577A (en) | Phase-change memory device and method of manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20170703 Address after: No. 188 East Huaihe Road, Huaiyin District, Jiangsu, Huaian Applicant after: Jiangsu times all core storage technology Co.,Ltd. Applicant after: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Applicant after: BEING ADVANCED MEMORY TAIWAN LIMITED Address before: 315195 Zhejiang city of Ningbo province Yinzhou Jingjiang Road Industrial Park, No. 1785 Applicant before: NINGBO ADVANCED MEMORY TECHNOLOGY Corp. Applicant before: BEING ADVANCED MEMORY TAIWAN LIMITED |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: No. 601, Changjiang East Road, Huaiyin District, Huaian, Jiangsu Co-patentee after: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Patentee after: JIANGSU ADVANCED MEMORY TECHNOLOGY Co.,Ltd. Co-patentee after: BEING ADVANCED MEMORY TAIWAN LIMITED Address before: 223001 No. 188 Huaihe East Road, Huaiyin District, Huaian City, Jiangsu Province Co-patentee before: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Patentee before: Jiangsu times all core storage technology Co.,Ltd. Co-patentee before: BEING ADVANCED MEMORY TAIWAN LIMITED |
|
| CP03 | Change of name, title or address |
Address after: 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing Patentee after: Beijing times full core storage technology Co.,Ltd. Patentee after: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Patentee after: BEING ADVANCED MEMORY TAIWAN LIMITED Address before: 223001 No. 601, Changjiang East Road, Huaiyin District, Huai'an City, Jiangsu Province Patentee before: JIANGSU ADVANCED MEMORY TECHNOLOGY Co.,Ltd. Patentee before: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Patentee before: BEING ADVANCED MEMORY TAIWAN LIMITED |
|
| CP03 | Change of name, title or address | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220125 Address after: 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing Patentee after: Beijing times full core storage technology Co.,Ltd. Address before: Room 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing 100094 Patentee before: Beijing times full core storage technology Co.,Ltd. Patentee before: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Patentee before: BEING ADVANCED MEMORY TAIWAN LIMITED |