CN105700608B - Circuit for realizing various temperature coefficients of voltage output by charge pump - Google Patents
Circuit for realizing various temperature coefficients of voltage output by charge pump Download PDFInfo
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- CN105700608B CN105700608B CN201610250583.2A CN201610250583A CN105700608B CN 105700608 B CN105700608 B CN 105700608B CN 201610250583 A CN201610250583 A CN 201610250583A CN 105700608 B CN105700608 B CN 105700608B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
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Abstract
The invention discloses a circuit for realizing various temperature coefficients of voltage output by a charge pump. The circuit comprises a voltage division circuit, a comparator, a voltage stabilizer, an oscillator, the charge pump and a filtering capacitor, wherein the voltage division circuit adjusts a connecting mode of a resistance network through a switch or a metal modifying item, so that a temperature coefficient of the voltage output by the charge pump is changed at one time through the metal modifying item or changed in real time through the switch. A feedback circuit of the charge pump is integrated with a circuit for adjusting various temperature coefficients, so that the output voltage of the charge pump under erasing, writing and reading operations has ideal temperature coefficients.
Description
Technical field
The present invention relates to a kind of CMOS analog circuits, more particularly to one kind make charge pump output voltage have various temperature
The circuit of coefficient.
Background technology
Charge pump is for the circuit of the higher magnitude of voltage of producing ratio supply voltage.Its basic functional principle is using electricity
Container both end voltage drop can not be mutated and can only be in the case of consecutive variations, by adding step signal in capacitor one end, then separately
One terminal voltage can be elevated corresponding step pressure difference, then have the controlling switch of time order and function come on or off chain by some
Road causes the process that voltage is raised persistently to change, and such a magnitude of voltage higher than supply voltage is just generated.But so
A magnitude of voltage be not perhaps one needs preferable magnitude of voltage, particularly each process corner (MOSFET corners),
Under wide temperature range (- 40 DEG C～120 DEG C) and voltage change, charge pump output voltage is changed greatly.
In order to still obtain more stable output voltage (Vout) in all cases, designer is usually by charge pump
It is placed on the feedback loop of a similar low pressure difference linear voltage regulator (Low DropOut voltage regulator, LDO)
In, charge pump voltage-stabilizing circuit is constituted, as shown in figure 1, charge pump circuit structure of the typical case with loop control includes voltage
Circuit 10, comparator 20, voltage-stablizer 30, oscillator 40, charge pump 50 and filter capacitor Cp, wherein oscillator (OSC) 40 are used
To provide clock Pclk to charge pump, filter capacitor Cp is used to dispel the burr that charge pump exports Vout, voltage branch circuit 10
Generally it is made up of resistor network, is low voltage Vdivider for the high pressure Vout partial pressures that export charge pump, comparator
(comparator) 20 is common circuit (not shown its power supply and other necessary circuitries), for dividing charge pump output voltage
Pressure Vdivider is compared with reference voltage (reference voltage) Vref and error voltage Pctrl is exported to steady
The input of depressor, voltage-stablizer 30 is common circuit (Vcd is its power supply in figure), for error voltage Vpctrl to be adjusted
And voltage-stablizer output Vneg is exported to the input of charge pump 50, charge pump 50 is generally shape multilevel hierarchy as shown in Figure 2,
So as to adjust some parameters of charge pump circuit so that in expected scope, in Fig. 2, the charge pump has output voltage stabilization
There is even level (being illustrated as level Four) boost circuit structure, wherein PUMP1, PUMP2, PUMP3 and PUMP4 is respectively charge pump
First, second, third and fourth stage booster circuit；VDD is supply voltage；Vintreg is input voltage, and Pclk is that charge pump is required
Clock signal.
The erasing (erase) of memory cell, write (program) and reading in flash memories (flash memory)
(read) operation be required for using the high pressure (high voltage) higher than supply voltage, typically in memory integrated one or
Several charge pump circuits are providing the high pressure.And when the temperature is changed, the operation high pressure required for memory cell can change, or even
Voltage variety is also different under different generic operations.This requires that charge pump output voltage has the spy for varying with temperature and changing
Point, i.e., with temperature coefficient, or even when being changed with adaptive temperature with various temperature coefficient value, required behaviour under different operation modes
Make voltage.
A kind of comparatively ideal method is to be added on reference voltage (reference voltage) Vref with temperature coefficient
The differential input end of comparator (comparator) 20.Comparator 20 compares charge pump output voltage partial pressure value Vdivider and base
Quasi- voltage Vref, now Vdivider be：
Wherein a/ (a+b) is partial pressure coefficient, and a and b is real number.
The comparator of high-gain is very sensitive, under minor variations of the reference voltage (Vref) with temperature, comparator output
Voltage Vpctrl changes therewith.
Vpctrl=A (Vref-Vdivider) (3)
Wherein A is the open-loop gain of comparator amplifier.
The voltage acts on the regulation pipe (regulator MOSFET) of low pressure difference linear voltage regulator 30, controls input electricity
The input current change of lotus pump boosting link：
Iintreg=-gm*Vpctrl (4)
Wherein gmFor the mutual conductance of regulation pipe.
Because the pipe often works in linear zone, therefore gmValue be as follows：
Wherein W/L is the breadth length ratio of regulation pipe, and u (is here p-type MOSFET, is then the migration in hole for charge mobility
Rate), Cox is the capacitance of gate oxide, and Vds is poor for the drain-source voltage of regulation pipe.
The current value is the input of charge pump, in the case where supply voltage and clock input are certain, charge pump output electricity
The regulation of pressure size only relies on the current value.General current value is bigger, and charge pump output voltage value is higher；Current value is less,
Output voltage is lower.
Thus charge pump exports Vout
Wherein a is ratio factor, and the value is relevant with the power-efficient of charge pump, and Rout is the output resistance of charge pump,
Rload is charge pump load resistance.
More than joint various to draw, the change of charge pump reference voltage will change will charge pump output voltage, while
This change is exported to comparator input terminal in turn through bleeder circuit so that amplifier Differential Input differential mode amount reduces as far as possible,
And be finally zero, make charge pump output reach balance.Now temperature-compensating is completed.
Temperature adjustment is based on reference voltage V ref by this kind of temperature compensation, and reference voltage is outer signal.Therefore
The circuit has temperature coefficient adjustable, accurate advantage, but shortcoming is also obvious：Need the external electricity of the benchmark with temperature coefficient
Pressure, which increases the design complexities of peripheral circuit.
It is that temperature control is placed in into charge pump loop that another kind realizes that charge pump output voltage has the method for temperature coefficient
Voltage branch circuit 10 in.What is generally required due to each operation of flash memory is that the high pressure with negative temperature coefficient (i.e. get over by temperature
Height, voltage is less；Temperature is lower, and magnitude of voltage is higher), and the terminal voltage of diode (diode) drop has negative temperature coefficient, therefore
A kind of simple and effective method is exactly to be connected to what is biased with the diode forward of appropriate PN junction area in bleeder circuit, base
Quasi- voltage Vref is the stable voltage not varied with temperature.As shown in Figure 3.
Branch pressure voltage value is：
Wherein RdiodeFor diode equivalent conducting resistance.
Vdiode variation with temperature (temperature is higher, and Vdiode is less), direct reaction is in Vdivider so that compare
Device (comparator) exports value changes, subsequent process and as analyzed before.Finally cause charge pump output voltage Vout phases
Should change.And this change just meets equation
Vout=Vdiode+VR1+VR2 (8)
So that system is further stable, it is finally reached：
Wherein β is partial pressure coefficient.
Terminal voltage difference is had in the feedback control loop of Diode series to charge pump of negative temperature coefficient through above-mentioned analysis,
Appropriate adjustment diode PN junction area can make the high pressure of charge pump output tool negative temperature coefficient value in need.However, the method
Still have as a drawback that：Method is single, and temperature coefficient changes less and is fixed one kind.
The content of the invention
To overcome the shortcomings of that above-mentioned prior art is present, the purpose of the present invention is to provide one kind to make charge pump output voltage
Circuit with various temperature coefficient, by being integrated with the electricity with various temperature coefficient adjustment in the backfeed loop of charge pump
Road so that output voltage of the charge pump under erasing, write and read operation has preferable temperature coefficient.
It is that, up to above and other purpose, the present invention proposes a kind of electricity for making charge pump output voltage have various temperature coefficient
Road, including voltage branch circuit, comparator, voltage-stablizer, oscillator, charge pump and filter capacitor, the voltage branch circuit electricity
Pressure bleeder circuit adjusts the connected mode of resistor network by using switch or metal modification item, disposable using metal modification item
Or using the temperature coefficient of the real-time output voltage for changing charge pump of switch.
Further, the voltage branch circuit includes：
Switching network, changes under control of the control signal the access state of resistance after finishing for chip package；
Metal changes network, including some metal modification items, for the permanent access state for changing resistance before chip package；
Resistor network, for producing the partial pressure of the charge pump output voltage of different temperature coefficients in proportion.
Further, the switching network at least includes metal short circuit class modification item (op11, op13, op15, op17) with gold
Category disconnects class modification item (op12, op14, op16, op18, op21, op22).
Further, the resistor network at least includes the first diode (D1), the second diode (D2), the 3rd diode
(D3), the 4th diode (D4), digital-to-analogue conversion resistance, the 4th resistance (Rd1), the 5th resistance (Rd2), the 6th resistance (Rd3),
Seven resistance (Rd4) and first resistor (R1), second resistance (R2), 3rd resistor (R3), the digital-to-analogue conversion resistance is charge pump
Output voltage trimming circuit, it constitutes the fixed value of resistance on voltage branch circuit together with second resistance (R2), and the 3rd
Resistance (R3) is resistance under voltage branch circuit.
Further, the first diode (D1), the second diode (D2), the 3rd diode (D3), the 4th diode (D4)
Positive cascade successively, the 4th diode (D4) negative electrode connects one end of the digital-to-analogue conversion resistance, the other end of the digital-to-analogue conversion resistance
Connect the 4th resistance (Rd1), the 4th resistance (Rd1), the 5th resistance (Rd2), the 6th resistance (Rd3), the 7th resistance (Rd4) and first
Resistance (R1), second resistance (R2), 3rd resistor (R3) are cascaded successively, 3rd resistor (R3) ground connection.
Further, the switching network include first switch (SW1), second switch (SW2), the 3rd switch (SW11), the
Four switches (SW21) and the 5th switch (SW2b).
Further, one end of metal modification item (op13, op14, op21) connect respectively the first diode (D1) anode,
Two diodes (D2) anode, the 3rd diode (D3) anode, another termination of metal modification item (op13, op14, op21) this
One end of two switches (SW2), diode (D4) negative electrode of another termination the 4th of second switch (SW2), metal modification item (op12,
Op11 one end) connects respectively the 3rd diode (D3) negative electrode, the 4th diode (D4) negative electrode, metal modification item (op12,
Op11 one end of another termination first switch (SW1)), another termination of the first switch (SW1) first diode (D1)
Negative electrode, one end of metal modification item (op16, op15) connect respectively the 6th resistance (Rd3) and the 7th resistance (Rd4) common port, the 7th
Resistance (Rd4) and first resistor (R1) common port, another termination of metal modification item (op16, op15) connects the 5th switch
(SW2b) one end, the 4th resistance (Rd1) of another termination of the 5th switch (SW2b) is public with the digital-to-analogue conversion resistance
End, one end of metal modification item (op17), one end of the 4th switch (SW21), the 3rd switch (SW11) one end with this
Four resistance (Rd1) are connected with the common port of digital-to-analogue conversion resistance, the other end of metal modification item (op17), the 4th switch (SW21)
The other end be connected with the common port of metal modification item (op18, op22), the other end of metal modification item (op18, op22) point
The 4th resistance (Rd1) and the 5th resistance (Rd2) common port, the 5th resistance (Rd2) and the 6th resistance (Rd3) common port are not connect, should
Another termination first resistor (R1) of the 3rd switch (SW11) and the common port of the second resistance (R2).
Further, it is assumed that the temperature coefficient of single diode is t, when read operation is carried out, the first switch (SW1),
3rd switch (SW11), the 5th switch (SW2b) switch closure, the second switch (SW2) disconnects, the first diode in circuit
(D1) access in charge pump loop with second resistance (R2), second diode (D2), the 3rd diode (D3), the 4th diode
(D4), first resistor (R1), the 4th resistance (Rd1), the 5th resistance (Rd2), the 6th resistance (Rd3), the 7th resistance (Rd4) quilt
Switch short, the temperature coefficient of charge pump output voltage is t；When erasing operation is carried out, first switch (SW1), second switch
(SW2), the 3rd switch (SW11) disconnects, the 5th switch (SW2b) closure, all diodes in circuit, the 4th-the seven resistance, the
One resistance (R1) and second resistance (R2) are accessed in charge pump loop, and the 4th-the seven resistance is switched on and off short circuit, charge pump output
The temperature coefficient of voltage is 4t；When write operation is carried out, the first switch (SW1), the 3rd switch (SW11), the 5th switch
(SW2b) disconnect, second switch (SW2) closure, all diodes are shorted in circuit, it is first resistor (R1), the 4th-the seven electric
Resistance is accessed in charge pump loop, and the temperature coefficient of charge pump output voltage is 0.
Further, the temperature coefficient of the circuit is adjusted by changing metal modification item：When by the modification of metal short circuit class
Item (op13/op15/op17) changes metal into and disconnects class modification item, and metal is disconnected into (the op12/op14/op16/ of class modification item
When op18) changing the modification item of metal short circuit class into, then the circuit can be realized：
I (), when read operation is carried out, the first switch (SW1), the 3rd switch (SW11), the 5th switch (SW2b) switch are closed
Close, second switch (SW2), the 4th switch (SW21) disconnect, and the first diode (D1) and second resistance (R2) access electricity in circuit
In lotus pump loop, the second-the four diode (D2-D4) and first resistor (R1), the 4th-the seven resistance (Rd1-Rd4) quilt
Switch short, the temperature coefficient of charge pump output voltage is t；
(ii) when erasing operation is carried out, the first switch (SW1), second switch (SW2), the 3rd switch (SW11), the
Four switches (SW21) disconnect, the 5th switch (SW2b) closure, the first to the 3rd diode (D1-D3), first resistor in circuit
(R1), the 7th resistance (Rd4) and second resistance (R2) are accessed in charge pump loop, the 4th diode (D4) and the 4th-the six electric
Resistance (Rd1-Rd3) is switched on and off short circuit, and the temperature coefficient of charge pump output voltage is 3t；
(iii) when write operation is carried out, the first switch (SW1), the 3rd switch (SW11), the 5th switch (SW2b) break
Open, second switch (SW2), the 4th switch (SW21) closure, in circuit the first diode (D1) access charge pump loop, second to
4th diode (D2-D4) is shorted, and the 4th resistance (Rd1) is shorted, first resistor (R1), the 5th-the seven resistance (Rd2-
Rd4) and second resistance (R2) all accesses charge pump loop, the temperature coefficient of charge pump output voltage is t.
Further, the temperature coefficient of the circuit is adjusted by changing metal modification item：When by the modification of metal short circuit class
Item (op13/op15/op17) changes metal into and disconnects class modification item, and metal is disconnected into (the op12/op21/op16/ of class modification item
When op22) changing the modification item of metal short circuit class into, then the circuit can be realized：
I (), when read operation is carried out, the first switch (SW1), the 3rd switch (SW11), the 5th switch (SW2b) switch are closed
Close, second switch (SW2), the 4th switch (SW21) disconnect, and the first diode (D1) and second resistance (R2) access electricity in circuit
In lotus pump loop, the second to the 4th diode (D2-D4) and the 4th to the 7th resistance (Rd1-Rd4) are switched on and off short circuit, electricity
The temperature coefficient of lotus pump output voltage is t；
(ii) when erasing operation is carried out, the first switch (SW1), second switch (SW2), the 3rd switch (SW11), the
Four switches (SW21) disconnect, the 5th switch (SW2b) closure, the first to the 3rd diode (D1-D3), first resistor in circuit
(R1), the 7th resistance (Rd4) and second resistance (R2) are accessed in charge pump loop, the 4th diode (D4) and the 4th to the 6th electric
Resistance (Rd1-Rd3) is switched on and off short circuit, and the temperature coefficient of charge pump output voltage is 3t；
(iii) when write operation is carried out, the first switch (SW1), the 3rd switch (SW11), the 5th switch (SW2b) break
Open, second switch (SW2), the 4th switch (SW21) closure, the first diode (D1), the second diode (D2) access electricity in circuit
Lotus pump loop, the 3rd diode (D3), the 4th diode (D4) are shorted, and the 4th resistance (Rd1), the 5th resistance (Rd2) are short
Road, first resistor (R1), the 6th resistance (Rd3), the 7th resistance (Rd4) all access charge pump loop, charge pump output voltage
Temperature coefficient is 2t.
Compared with prior art, the present invention it is a kind of make the circuit that charge pump output voltage has various temperature coefficient by
The integrated circuit with various temperature coefficient adjustment in the backfeed loop of charge pump so that charge pump memory erasing, write
Enter and there is preferable temperature coefficient with the output voltage under read operation.
Description of the drawings
Fig. 1 is the circuit structure diagram of charge pump circuit of the prior art typical case with loop control；
Fig. 2 is the level Four charge pump construction schematic diagram of prior art；
Fig. 3 is that the negative temperature coefficient being placed in charge pump loop in prior art adjusts circuit diagram；
Fig. 4 is a kind of circuit diagram of the circuit for making charge pump output voltage have various temperature coefficient of the present invention；
Fig. 5 is the circuit diagram of voltage branch circuit in present pre-ferred embodiments.
Specific embodiment
Below by way of specific instantiation and embodiments of the present invention are described with reference to the drawings, those skilled in the art can
The further advantage and effect of the present invention are understood easily by content disclosed in the present specification.The present invention also can be different by other
Instantiation implemented or applied, the every details in this specification also can based on different viewpoints with application, without departing substantially from
Various modifications and change are carried out under the spirit of the present invention.
Fig. 4 is a kind of circuit diagram of the circuit for making charge pump output voltage have various temperature coefficient of the present invention.Such as
Shown in Fig. 4, a kind of circuit for making charge pump output voltage that there is various temperature coefficient of the present invention, including voltage branch circuit 40,
Comparator 41, voltage-stablizer 30, oscillator 42, charge pump 43 and filter capacitor Cp.
Wherein, comparator 41, voltage-stablizer 42, oscillator 43, charge pump 44 and filter capacitor Cp with it is of the prior art
Structure is identical, will not be described here.Voltage branch circuit 40 adjusts the company of resistor network by using switch or metal modification item
Mode is connect, disposably or using switch changes the temperature coefficient of the output voltage of charge pump in real time using metal modification item.
Fig. 5 is the circuit diagram of voltage branch circuit in present pre-ferred embodiments.As shown in figure 5, the voltage
Circuit, comprising resistor network 101, metal network 102 and switching network 103 are changed.
Wherein, switching network 103 by switch SW1, SW2, SW11, SW21, SW2b constitute, after finishing for chip package
Change the access state of resistance under the control of control signal (not shown)；Metal modification network 102 includes metal modification item
(option) op11-op18, op21-op22, op11, op13, op15, op17 class for metal short circuit (short) class modification item,
Op12, op14, op16, op18, op21, op22 class disconnects (open) class modification item for metal, for permanent before chip package
Change the access state of resistance；Resistor network 101 is by diode D1-D4 (equivalent to negative temperature coefficient resister), digital-to-analogue conversion electricity
Resistance R-DAC, resistance Rd1-Rd4, resistance R1-R3 compositions, for producing the charge pump output voltage of different temperature coefficients in proportion
Partial pressure Vdivider, digital-to-analogue conversion resistance R-DAC is charge pump output voltage trimming circuit, and it constitutes voltage point together with R2
The fixed value of resistance on volt circuit；Resistance R3 is resistance under voltage branch circuit.
Diode D1-D4 positive cascades successively, diode D4 negative electrodes connect one end of digital-to-analogue conversion resistance R-DAC, and digital-to-analogue turns
Another terminating resistor Rd1 of resistance R-DAC is changed, resistance Rd1-Rd4, resistance R1-R3 are cascaded successively, resistance R3 ground connection；Metal is repaiied
The one end for changing op13, op14, op21 connects respectively diode D1 anodes, diode D2 anodes (diode D1 negative electrodes), diode
D3 anodes (diode D2 negative electrodes), metal modification item op13, op14, one end of another termination switch SW2 of op21, switch SW2
Another terminating diode D4 negative electrodes, one end of metal modification item op12, op11 connects respectively diode D3 negative electrodes, and (diode D4 is positive
Pole), diode D4 negative electrodes, metal modification item op12, op11 it is another termination switch SW1 one end, switch SW1 another termination
Diode D1 negative electrodes (diode D2 anodes), one end difference connecting resistance Rd3 and Rd4 common port of metal modification item op16, op15,
Resistance Rd4 and R1 common ports, another one end for meeting switch SW2b of metal modification item op16, op15, switch SW2b is another
The common port of one terminating resistor Rd1 and digital-to-analogue conversion resistance R-DAC, one end of metal modification item op17, one end of switch SW21,
Switch SW11 one end be connected with resistance Rd1 with the common port of digital-to-analogue conversion resistance R-DAC, metal modification item op17 it is another
End, switch SW21 the other end be connected with the common port of metal modification item op18, op22, metal modification item op18, op22 it
The other end distinguishes connecting resistance Rd1 and Rd2 common ports, resistance Rd2 and Rd3 common port, switch SW11 another terminating resistor R1 and
R2 common ports.
The temperature coefficient for assuming single diode is t (t be negative, unit mV/ DEG C), then the circuit can be realized：
I (), when read operation is carried out, SW1/SW11/SW2b switch closures, SW2 disconnects, diode D1 and resistance in circuit
R2 is accessed in charge pump loop, and diode D2-D4, resistance R1, Rd1-Rd4 are switched on and off short circuit, charge pump output voltage
The temperature coefficient of Vout is t；
(ii) when erasing operation is carried out, SW1/SW2/SW11 disconnects, SW2b closures, all diode D1- in circuit
D4, resistance Rd1-Rd4R1 and R2 are accessed in charge pump loop, and resistance Rd1-Rd4 is switched on and off short-circuit (except R3), charge pump
The temperature coefficient of output voltage Vout is 4t；
(iii) when write operation is carried out, SW1/SW11/SW2b disconnects, SW2 closures, all diode (D1- in circuit
D4) it is shorted, all resistance (R1, Rd1-Rd4) are accessed in charge pump loop, the temperature coefficient of charge pump output voltage Vout
For 0；
The temperature coefficient of the circuit can also be adjusted additionally by metal modification item is changed.
Class modification item is disconnected when modification item op13/op15/op17 of metal short circuit class is changed into metal, and metal is disconnected
When the op12/op14/op16/op18 of class modification item changes the modification item of metal short circuit class into, then the circuit can be realized：
(i) when read operation is carried out, SW1/SW11/SW2b switch closure, SW2/SW21 disconnect, in circuit diode D1 and
Resistance R2 is accessed in charge pump loop, and diode D2-D4 and resistance R1, Rd1-Rd4 are switched on and off short circuit, charge pump output electricity
The temperature coefficient of pressure Vout is t；
(ii) when erasing operation is carried out, SW1/SW2/SW11/SW21 disconnects, SW2b closures, diode D1- in circuit
D3, resistance R1, Rd4 and R2 are accessed in charge pump loop, and diode D4 and resistance Rd1-Rd3 is switched on and off short circuit, and charge pump is defeated
The temperature coefficient for going out voltage Vout is 3t；
(iii) when write operation is carried out, SW1/SW11/SW2b disconnects, SW2/SW21 closures, and diode D1 connects in circuit
Enter charge pump loop, diode D2-D4 is shorted, and resistance Rd1 is shorted, resistance R1, Rd2-Rd4 and resistance R2 access electricity
Lotus pump loop, the temperature coefficient of charge pump output voltage Vout is t；
Class modification item is disconnected when modification item op13/op15/op17 of metal short circuit class is changed into metal, and metal is disconnected
When the op12/op21/op16/op22 of class modification item changes the modification item of metal short circuit class into, then the circuit can be realized：
(i) when read operation is carried out, SW1/SW11/SW2b switch closure, SW2/SW21 disconnect, in circuit diode D1 and
Resistance R2 is accessed in charge pump loop, and diode D2-D4 and resistance Rd1-Rd4 is switched on and off short circuit, charge pump output voltage
The temperature coefficient of Vout is t；
(ii) when erasing operation is carried out, SW1/SW2/SW11/SW21 disconnects, SW2b closures, diode D1- in circuit
3rd, resistance R1, Rd4 and R2 is accessed in charge pump loop, and diode D4 and resistance Rd1-Rd3 is switched on and off short circuit, and charge pump is defeated
The temperature coefficient for going out voltage Vout is 3t；
(iii) when write operation is carried out, SW1/SW11/SW2b disconnects, SW2/SW21 closures, diode D1- in circuit
2 access charge pump loop, and diode D3-D4 is shorted, and Rd1-Rd2 is shorted, and resistance R1, Rd3-Rd4 access charge pump
Loop, the temperature coefficient of charge pump output voltage Vout is 2t；
Jing is emulated to the present invention, is compared with the prior art result as follows：
By taking existing design circuit as an example, it is desirable to：
I when data are read, charge pump output voltage has -1.4mV/ DEG C of temperature coefficient to () memory；
(ii) in erasing operation, charge pump output voltage has -5.6mV/ DEG C of temperature coefficient to memory；
(iii) in write operation, charge pump output voltage has 0mV/ DEG C of temperature coefficient to memory；
Simulating, verifying as shown by data：
I when data are read, charge pump output voltage has -1.36mV/ DEG C of temperature coefficient to () memory；
(ii) in erasing operation, charge pump output voltage has -5.44mV/ DEG C of temperature coefficient to memory；
(iii) in write operation, charge pump output voltage has 0mV/ DEG C of temperature coefficient to memory；
These are all consistent with design requirement.
Simultaneously when the adjustment of row metal modification item is entered, can also realize：
I when data are read, charge pump output voltage has -1.4mV/ DEG C of temperature coefficient to () memory；
(ii) in erasing operation, charge pump output voltage has -4.2mV/ DEG C of temperature coefficient to memory；
(iii) in write operation, charge pump output voltage has -1.4mV/ DEG C of temperature coefficient to memory；
Again adjustment member metal modification item, can also realize：
I when data are read, charge pump output voltage has -1.4mV/ DEG C of temperature coefficient to () memory；
(ii) in erasing operation, charge pump output voltage has -4.2mV/ DEG C of temperature coefficient to memory；
(iii) in write operation, charge pump output voltage has -2.8mV/ DEG C of temperature coefficient to memory；
This two groups quick correcting for being embodied as designing is provided and ensured.
It can be seen that, the present invention is a kind of to make the circuit that charge pump output voltage has various temperature coefficient by the anti-of charge pump
It is fed back to the integrated circuit with various temperature coefficient adjustment in road so that charge pump is grasped in erasing, write and the reading of memory
Output voltage under making has preferable temperature coefficient.
The principle and its effect of above-described embodiment only illustrative present invention, it is of the invention not for limiting.Any
Art personnel can be modified above-described embodiment and are changed under the spirit and the scope without prejudice to the present invention.Therefore,
The scope of the present invention, should be as listed by claims.
Claims (8)
1. a kind of circuit for making charge pump output voltage that there is various temperature coefficient, including voltage branch circuit, comparator, voltage stabilizing
Device, oscillator, charge pump and filter capacitor, it is characterised in that：The voltage branch circuit is by using switch or metal modification
The connected mode of item adjustment resistor network, it is disposably or electric using the real-time output for changing charge pump of switch using metal modification item
The temperature coefficient of pressure；
The voltage branch circuit includes：
Switching network, changes under control of the control signal the access state of resistance after finishing for chip package；
Metal changes network, including some metal modification items, for the permanent access state for changing resistance before chip package；
Resistor network, for producing the partial pressure of the charge pump output voltage of different temperature coefficients in proportion；
The resistor network at least includes the first diode (D1), the second diode (D2), the 3rd diode (D3), the 4th diode
(D4), digital-to-analogue conversion resistance, the 4th resistance (Rd1), the 5th resistance (Rd2), the 6th resistance (Rd3), the 7th resistance (Rd4) and
First resistor (R1), second resistance (R2), 3rd resistor (R3), the digital-to-analogue conversion resistance is charge pump output voltage fine setting electricity
Road, it constitutes the fixed value of resistance on voltage branch circuit together with second resistance (R2), and the 3rd resistor (R3) is voltage
Resistance under bleeder circuit.
2. a kind of circuit for making charge pump output voltage that there is various temperature coefficient as claimed in claim 1, it is characterised in that：
The metal modification network at least includes that metal short circuit class modification item op11, op13, op15, op17 and metal disconnect class modification item
op12、op14、op16、op18、op21、op22。
3. a kind of circuit for making charge pump output voltage that there is various temperature coefficient as claimed in claim 2, it is characterised in that：
The positive cascade successively of first diode (D1), the second diode (D2), the 3rd diode (D3), the 4th diode (D4), the 4th
Diode (D4) negative electrode connects one end of the digital-to-analogue conversion resistance, the resistance (Rd1) of another termination the 4th of the digital-to-analogue conversion resistance, and
Four resistance (Rd1), the 5th resistance (Rd2), the 6th resistance (Rd3), the 7th resistance (Rd4) and first resistor (R1), second resistance
(R2), 3rd resistor (R3) is cascaded successively, 3rd resistor (R3) ground connection.
4. a kind of circuit for making charge pump output voltage that there is various temperature coefficient as claimed in claim 3, it is characterised in that：
The switching network include first switch (SW1), second switch (SW2), the 3rd switch (SW11), the 4th switch (SW21) and
5th switch (SW2b).
5. a kind of circuit for making charge pump output voltage that there is various temperature coefficient as claimed in claim 4, it is characterised in that：
Metal modification item op13, op14, one end of op21 connect respectively the first diode (D1) anode, the second diode (D2) anode,
Three diodes (D3) anode, metal modification item op13, op14, one end of another termination of op21 second switch (SW2), second
Diode (D4) negative electrode of another termination the 4th of switch (SW2), one end of metal modification item op12, op11 connects respectively the three or two pole
Pipe (D3) negative electrode, the 4th diode (D4) negative electrode, another termination first switch (SW1) of metal modification item op12, op11
One end, another termination of the first switch (SW1) the first diode (D1) negative electrode, one end of metal modification item op16, op15
The 6th resistance (Rd3) is connect respectively with the 7th resistance (Rd4) common port, the 7th resistance (Rd4) and first resistor (R1) common port, gold
One end of the switch of another termination the 5th (SW2b) of category modification item op16, op15, another termination of the 5th switch (SW2b)
The common port of the 4th resistance (Rd1) and the digital-to-analogue conversion resistance, one end of metal modification item op17, the 4th switch (SW21)
One end, the 3rd switch (SW11) one end be connected with the common port of digital-to-analogue conversion resistance with the 4th resistance (Rd1), metal
The other end of modification item op17, the other end of the 4th switch (SW21) are connected with the common port of metal modification item op18, op22,
The other end of metal modification item op18, op22 connects respectively the 4th resistance (Rd1) and the 5th resistance (Rd2) common port, the 5th resistance
(Rd2) with the 6th resistance (Rd3) common port, the 3rd switchs another termination first resistor (R1) of (SW11) and the second resistance
(R2) common port.
6. a kind of circuit for making charge pump output voltage that there is various temperature coefficient as claimed in claim 5, it is characterised in that：
The temperature coefficient for assuming single diode is t, when read operation is carried out, the first switch (SW1), the 3rd switch (SW11), the
Five switch (SW2b) switch closures, the second switch (SW2) disconnects, and the first diode (D1) and second resistance (R2) connect in circuit
In entering charge pump loop, second diode (D2), the 3rd diode (D3), the 4th diode (D4), first resistor (R1),
Four resistance (Rd1), the 5th resistance (Rd2), the 6th resistance (Rd3), the 7th resistance (Rd4) are switched on and off short circuit, charge pump output
The temperature coefficient of voltage is t；When erasing operation is carried out, first switch (SW1), second switch (SW2), the 3rd switch (SW11)
Disconnect, the 5th switch (SW2b) closure, all diodes, first resistor (R1) and second resistance (R2) access charge pump in circuit
In loop, the 4th-the seven resistance is switched on and off short circuit, and the temperature coefficient of charge pump output voltage is 4t；When carrying out write operation
When, the first switch (SW1), the 3rd switch (SW11), the 5th switch (SW2b) disconnect, second switch (SW2) closure, in circuit
All diodes are shorted, and first resistor (R1), the 4th-the seven resistance are accessed in charge pump loop, charge pump output voltage
Temperature coefficient is 0.
7. a kind of circuit for making charge pump output voltage that there is various temperature coefficient as claimed in claim 5, it is characterised in that
The temperature coefficient of the circuit is adjusted by changing metal modification item：When modification item op13/op15/op17 of metal short circuit class is changed
Class modification item is disconnected into metal, and changes the op12/op14/op16/op18 that metal disconnects class modification item into metal short circuit classes
During modification item, then the circuit can be realized：
I (), when read operation is carried out, the first switch (SW1), the 3rd switch (SW11), the 5th switch (SW2b) switch are closed,
Second switch (SW2), the 4th switch (SW21) disconnect, and the first diode (D1) and second resistance (R2) access charge pump in circuit
In loop, the second-the four diode (D2-D4) and first resistor (R1), the 4th-the seven resistance (Rd1-Rd4) are switched on and off
Short circuit, the temperature coefficient of charge pump output voltage is t；
(ii) when erasing operation is carried out, the first switch (SW1), second switch (SW2), the 3rd switch (SW11), the 4th open
Close (SW21) to disconnect, the 5th switch (SW2b) closure, the first to the 3rd diode (D1-D3) in circuit, first resistor (R1),
7th resistance (Rd4) and second resistance (R2) are accessed in charge pump loop, the 4th diode (D4) and the 4th-the six resistance
(Rd1-Rd3) it is shorted, the temperature coefficient of charge pump output voltage is 3t；
(iii) when write operation is carried out, the first switch (SW1), the 3rd switch (SW11), the 5th switch (SW2b) disconnect,
Second switch (SW2), the 4th switch (SW21) closure, the first diode (D1) accesses charge pump loop in circuit, and second to the
Four diodes (D2-D4) are shorted, and the 4th resistance (Rd1) is shorted, first resistor (R1), the 5th-the seven resistance (Rd2-
Rd4) and second resistance (R2) all accesses charge pump loop, the temperature coefficient of charge pump output voltage is t.
8. a kind of circuit for making charge pump output voltage that there is various temperature coefficient as claimed in claim 5, it is characterised in that
The temperature coefficient of the circuit is adjusted by changing metal modification item：When modification item op13/op15/op17 of metal short circuit class is changed
Class modification item is disconnected into metal, and changes the op12/op21/op16/op22 that metal disconnects class modification item into metal short circuit classes
During modification item, then the circuit can be realized：
I (), when read operation is carried out, the first switch (SW1), the 3rd switch (SW11), the 5th switch (SW2b) switch are closed,
Second switch (SW2), the 4th switch (SW21) disconnect, and the first diode (D1) and second resistance (R2) access charge pump in circuit
In loop, the second to the 4th diode (D2-D4) and the 4th to the 7th resistance (Rd1-Rd4) are switched on and off short circuit, charge pump
The temperature coefficient of output voltage is t；
(ii) when erasing operation is carried out, the first switch (SW1), second switch (SW2), the 3rd switch (SW11), the 4th open
Close (SW21) to disconnect, the 5th switch (SW2b) closure, the first to the 3rd diode (D1-D3) in circuit, first resistor (R1),
7th resistance (Rd4) and second resistance (R2) are accessed in charge pump loop, the 4th diode (D4) and the 4th to the 6th resistance
(Rd1-Rd3) it is shorted, the temperature coefficient of charge pump output voltage is 3t；
(iii) when write operation is carried out, the first switch (SW1), the 3rd switch (SW11), the 5th switch (SW2b) disconnect,
Second switch (SW2), the 4th switch (SW21) closure, the first diode (D1), the second diode (D2) access electric charge in circuit
Pump loop, the 3rd diode (D3), the 4th diode (D4) are shorted, and the 4th resistance (Rd1), the 5th resistance (Rd2) are shorted,
First resistor (R1), the 6th resistance (Rd3), the 7th resistance (Rd4) all access charge pump loop, the temperature of charge pump output voltage
Coefficient is 2t.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610250583.2A CN105700608B (en) | 2016-04-21 | 2016-04-21 | Circuit for realizing various temperature coefficients of voltage output by charge pump |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610250583.2A CN105700608B (en) | 2016-04-21 | 2016-04-21 | Circuit for realizing various temperature coefficients of voltage output by charge pump |
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| CN105700608B true CN105700608B (en) | 2017-05-10 |
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| CN100353458C (en) * | 2003-12-10 | 2007-12-05 | 上海华虹Nec电子有限公司 | Charge pump in use for circuit of non-volatility memory |
| JP2007066467A (en) * | 2005-09-01 | 2007-03-15 | Seiko Instruments Inc | Nonvolatile semiconductor memory device |
| KR100784918B1 (en) * | 2006-10-13 | 2007-12-11 | 주식회사 하이닉스반도체 | Internal voltage generator of semiconductor memory device |
| CN103138564A (en) * | 2011-11-30 | 2013-06-05 | 上海华虹Nec电子有限公司 | Charge pump output voltage temperature compensation circuit |
| CN204790660U (en) * | 2015-06-09 | 2015-11-18 | 厦门元顺微电子技术有限公司 | Controllable temperature coefficient's circuit for generating a reference voltage |
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