CN105684167A - Nitride semiconductor ultraviolet light-emitting device - Google Patents
Nitride semiconductor ultraviolet light-emitting device Download PDFInfo
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- CN105684167A CN105684167A CN201480057220.6A CN201480057220A CN105684167A CN 105684167 A CN105684167 A CN 105684167A CN 201480057220 A CN201480057220 A CN 201480057220A CN 105684167 A CN105684167 A CN 105684167A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
Abstract
The present invention relates to a nitride semiconductor ultraviolet light-emitting device capable of improving electrical characteristics and photoconversion efficiency by forming, on an exposed surface of an n-type semiconductor layer, an n-electrode forming layer capable of enhancing characteristics of contact with an n-electrode. To this end, the nitride semiconductor ultraviolet light-emitting device of the present invention comprises an n-type semiconductor layer, an active layer and a p-type semiconductor layer which are sequentially stacked on a substrate, and is equipped with an n-type electrode and a p-type electrode so as to apply electric current, wherein as a part of the p-type semiconductor layer, the active layer and the n-type layer are etched, a part or the whole of the exposed surface of the exposed n-type semiconductor layer is equipped with an n-electrode forming layer, and an n-type metal layer is formed on the upper side of the exposed side of the n-type semiconductor layer so as to cover the n-electrode forming layer, the n-electrode forming layer being configured to have lower band-gap energy than the n-type semiconductor layer.
Description
Technical field
The present invention relates to nitride-based semiconductor ultraviolet ray emitting element, more specifically, relate to following nitride-based semiconductor ultraviolet ray emitting element: the exposed surface in n-type semiconductor layer forms the n-electrode cambium layer that can improve the contact performance with n-electrode such that it is able to improve electrical characteristics and light conversion efficiency.
Background technology
The nitride-based semiconductor of AlGaNInN or the like possesses the band structure of Direct Transfer type, by the combination of Al, In and Ga, the light-emitting component possessing the wider wavelength region from infrared spectral range to ultraviolet range the band gap from 0.66eV (InN) to 6.2eV (AlN) can be regulated, thus can be used in.
There is the light source of full-color display, traffic light, general lighting and optical communication equipment as the representational application of nitride semiconductor, and be employed with the form of ultraviolet, white-light luminescent component (lightemittingdiodes) or laser diode (laserdiode).
Such nitride-based light-emitting device includes the active layer of the multi-quantum pit structure between n-type and p-type nitride semiconductor layer, the quantum well layer in above-mentioned active layer, produces light by the principle of electronics with hole-recombination.
Fig. 1 is an illustration for the profile of conventional semiconductor light-emitting elements, with reference to Fig. 1, above-mentioned conventional semiconductor light-emitting elements includes: substrate (10), n-type semiconductor layer (100), active layer (200), wall (310), hole injection layer (320), electronic barrier layer (330), p-type semiconductor layer (400), p-electrode cambium layer (410a), n-type metal level (115), p-type metal level (410b), n-electrode (120) and p-electrode (420).
Such conventional light-emitting component includes the active layer (200) of multi-quantum pit structure between n-type semiconductor layer (100) and p-type semiconductor layer (400), improve internal quantum, and regulate the In content of InGaN well layer in multi-quantum pit structure or the Al content of AlGaN well layer and release the light of desired wavelength.
It addition, electronic barrier layer (330) is positioned at the spilling stopping electronics between p-type semiconductor layer (400) and active layer (200), thus improving luminous recombination rate.
It addition, wall (310) is formed on active layer (200), with acting on the cushion forming electronic barrier layer (330).
It addition, be formed with p-electrode (420) on the p-type metal level (410b) of upper surface being formed at p-electrode cambium layer (410a), so that electric current is evenly dispersed in p-type semiconductor layer (400).
When applying electric current to the semiconductor light-emitting elements of constructed as above, electronics and hole, electronics and hole is provided to produce light in active layer (200) compound respectively from n-type semiconductor layer (100) and p-type semiconductor layer (400).
Now, in order to improve the extraction efficiency of the light generated, apply flip chip structure, it is thicker in the structure shown here p-electrode to be formed as so that it reflects light so that send light to substrate-side.
Particularly, when nitride based ultraviolet ray emitting element, p-type GaN layer is mainly used as p-electrode cambium layer, but owing to absorbing the ultraviolet more part occurred from active layer, therefore applies flip chip structure.
At this, p-electrode cambium layer is to cause being difficult to the shortcoming of Ohmic contact because of the relatively low hole concentration of p-type semiconductor layer to improve and insert.
It addition, when being formed at the n-electrode of n-type AlGaN layer upper end, the ohm property different from p-electrode can be obtained, but because of higher Al component ratio, easily form alumina layer on surface.
Such as, when being formed at the n-electrode of n-AlGaN upper end, it is generally configured with 10-3Ω/cm2The contact resistance of level, and when the n-electrode of n-GaN upper end, possess 10 because of alumina layer-5Ω/cm2Following contact resistance.
Therefore, in order to improve electrical characteristics and the light conversion efficiency of nitride-based semiconductor system ultraviolet ray emitting element, it is necessary to have the n-electrode formation technology to the characteristic that conventional n-electrode characteristic is improved further.
Korean Patent Laid the 10-2009-0067306th (2009.06.25.)
Summary of the invention
Technical task
In order to solve the problem points in above-mentioned conventional art, it is an object of the invention to provide a kind of nitride-based semiconductor ultraviolet ray emitting element, it forms, in the exposed surface of n-type semiconductor layer, the n-electrode cambium layer that can improve the contact performance with n-electrode such that it is able to improve electrical characteristics and light conversion efficiency.
Solve the means of problem
In order to solve such as above-mentioned technical task, the nitride-based semiconductor ultraviolet ray emitting element of the present invention includes the n-type semiconductor layer stacked gradually on substrate, active layer and p-type semiconductor layer, and possess the n-electrode for applying electric current and p-electrode, wherein, passing through described p-type semiconductor layer, a part or the entirety of the exposed surface of the described n-type semiconductor layer that a part for active layer and described n-type semiconductor layer is etched and exposes possess n-electrode cambium layer, n-type metal level is formed to cover the cambial mode of described n-electrode in the upside of described n-type semiconductor layer exposed surface, described n-electrode cambium layer is compared with described n-type semiconductor layer, band-gap energy is little.
Being preferably, described n-type semiconductor layer is by AlzGa1-zThe component ratio of N (0≤z≤1) is formed, and described n-electrode cambium layer is by AluGa1-u(0≤u≤1, < component ratio z) is formed u N, thus described n-electrode cambium layer is compared with described n-type semiconductor layer, band-gap energy is little.
Being preferably, described n-electrode cambium layer is formed as possessing multiple structure.
It is preferably, forms the cambial multilamellar of described n-electrode and may be configured as the Rotating fields that band-gap energy more reduces the closer to top.
Being preferably, described n-electrode cambium layer is formed as band-gap energy along with gradient (gradation) form gradually decreased near top.
Being preferably, described n-electrode cambium layer can the regrowth by selective area growth method.
Being preferably, described n-electrode cambium layer can grow by the following method: the exposed surface in described n-type semiconductor layer forms dielectric layer, after a part of opening making described dielectric layer, makes semiconductor growth layer.
Being preferably, described dielectric layer can by SiO2、SiOx、SiN、SiNx、Al2O3Constitute with at least one in GaO.
Being preferably, can also include electronic barrier layer, this electronic barrier layer is arranged between described active layer and described p-type semiconductor layer.
Being preferably, described n-electrode cambium layer is formed as the striped form being separated from each other.
Being preferably, described n-electrode cambium layer is formed as the annular form being separated from each other.
Being preferably, described n-electrode cambium layer can include dominant shape stratification and the multiple accessory cambiums extended from described dominant shape stratification.
Being preferably, described n-electrode cambium layer can include at least arbitrary form in following form and constitute: the striped form being separated from each other, the annular form being separated from each other and include dominant shape stratification and the form of multiple accessory cambiums extended from described dominant shape stratification.
Invention effect
Invention as described above has the advantage being obtained in that the nitride-based semiconductor ultraviolet ray emitting element improving electrical characteristics, specifically, having the advantage that the contact resistance improving n-electrode, reducing the voltage drop occurred at electrode, thus reducing the running voltage of element.
It addition, by reducing operation voltage, it is possible to improve the light conversion efficiency of nitride-based semiconductor ultraviolet ray emitting element.
Additionally, owing to n-electrode cambium layer does not absorb the light (ultraviolet) occurred from active layer, therefore, it is possible to maintain the light efficiency of conventional nitride-based semiconductor ultraviolet ray emitting element, the electric flux injected realized according to the minimizing by contact resistance reduces effect, it is possible to increase the light conversion efficiency of element.
It addition, by the injection efficiency improving electronics, it is possible to inject more uniform electric current to n-type semiconductor layer.
Accompanying drawing explanation
Fig. 1 is an illustration for the profile of conventional semiconductor light-emitting elements.
Fig. 2 indicates that the profile of the semiconductor light-emitting elements of one embodiment of the invention.
Fig. 3 a indicates that the top view of the semiconductor light-emitting elements of one embodiment of the invention.
Fig. 3 b indicates that the part sectioned view of the section of " A " part of Fig. 3 a.
Fig. 4 indicates that the profile of the semiconductor light-emitting elements of one embodiment of the invention.
Detailed description of the invention
The present invention, when without departing from its technological thought or principal character, can pass through other various forms and implement. Therefore, embodiments of the invention go up only simple example in all respects, and can not restrictively explain embodiments of the invention.
First, second term such as grade can be used to various structural elements are illustrated, and said structure key element is not had restriction effect by above-mentioned term.
Above-mentioned term is only for distinguishing a structural element and another structural element. Such as, when without departing from the interest field of the present invention, can by first structural element called after the second structural element, similarly also can by second structural element called after the first structural element.
And/or this term include multiple relevant record project combination or multiple relevant record project in arbitrary project.
When being recited as a certain structural element with another structural element " link " or " connection ", it is thus understood that be likely to directly link with this another structural element or be connected, it is also possible to there is also other structural elements in centre.
On the contrary, when being recited as a certain structural element with another structural element " directly linking " or " being directly connected to ", it is understood that other structural elements it are absent from centre.
The term used in this application is only used to specific embodiment be illustrated and uses, and the present invention is not had restriction effect by it. When clearly not distinguishing in the context of article, the statement of odd number includes the statement of plural number.
In this application, " include " or the term such as " possessing ", " having " is the existence specifying feature, numeral, step, action, structural element, parts or their combination recorded in description, and be not get rid of the existence of other features one or more or numeral, step, action, structural element, parts or their combination or additional probability in advance.
When as broad as long definition, all as used herein terms including technical term or scientific terminology possess the meaning equivalent in meaning being generally understood with those skilled in the art.
The term identical with term defined on normally used dictionary should be interpreted to possess the meaning consistent with the meaning that has in the context at the article of correlation technique, do not have in clearly defined situation in this application, should not be construed as desirable or excessively form the meaning.
Below, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, for the structural element independently identical or corresponding with accompanying drawing labelling, gives identical reference marker, and it is omitted repeat specification.
When the present invention will be described, if it is determined that related known technology illustrated the purport that may obscure the present invention, then to its detailed.
As shown in Figure 2, n-type semiconductor layer (100) that the nitride-based semiconductor ultraviolet ray emitting element of one embodiment of the invention is included on substrate (10) stacking gradually, active layer (200), p-type semiconductor layer (400) nitride-based semiconductor ultraviolet ray emitting element, between active layer (200) and p-type semiconductor layer (400), be also equipped with wall (310), hole injection layer (320), electronic barrier layer (330).
As the material of above-mentioned n-type semiconductor layer (100) and above-mentioned p-type semiconductor layer (400), AlGaN can be used.
Additionally, the nitride-based semiconductor ultraviolet ray emitting element of the present embodiment is configured to be sequentially laminated with p-electrode cambium layer (410a) and the structure of p-type metal level (410b) at the upper surface of above-mentioned p-type semiconductor layer (400), is formed with p-electrode (420) on above-mentioned p-electrode cambium layer (410a).
Additionally, as shown in Figure 3 b, above-mentioned nitride-based semiconductor ultraviolet ray emitting element is passing through above-mentioned p-type semiconductor layer (400), the entirety of the exposed surface of the above-mentioned n-type semiconductor layer (100) that a part for active layer (200) and above-mentioned n-type semiconductor layer (100) is etched and exposes possesses n-electrode cambium layer (110) (being equivalent to the situation of Fig. 3 a), or possess n-electrode cambium layer (110) (being equivalent to the situation of Fig. 3 b) in the part of the exposed surface of above-mentioned n-type semiconductor layer (100), and in the way of covering above-mentioned n-electrode cambium layer (110), it is formed with n-type metal level (115) in the upside of the exposed surface of above-mentioned n-type semiconductor layer (100).
Now, above-mentioned n-electrode cambium layer (110) is compared with above-mentioned n-type semiconductor layer (100), and band-gap energy is little. Such as, can use, in above-mentioned n-electrode cambium layer (110), AlGaN or GaN that Al component ratio is relatively low compared with the AlGaN being used in above-mentioned n-type semiconductor layer (100), and be doped to n-type.
Specifically, for instance, above-mentioned n-electrode cambium layer (110) is formed as compared with above-mentioned n-type semiconductor layer (100), and Al component ratio is lower, for instance, above-mentioned n-type semiconductor layer (100) is by AlzGa1-zThe component ratio of N (0≤z≤1) is formed, and above-mentioned n-electrode cambium layer (110) is by AluGa1-u(0≤u≤1, < component ratio z) is formed u N, thus above-mentioned n-electrode cambium layer is compared with above-mentioned n-type semiconductor layer, band-gap energy is little.
As an example, can in the relatively high n-type semiconductor layer (100 of Al component ratio, n-type AlGaN layer) upper end insert relatively low AlGaN or GaN being doped to n-type of Al component ratio, form n-electrode cambium layer (110), so, by forming n-electrode (120) on above-mentioned n-electrode cambium layer (110) such that it is able to provide electrical characteristics to obtain the nitride-based semiconductor ultraviolet ray emitting element improved.
It addition, as shown in Figure 4, above-mentioned n-electrode cambium layer (110) is formed as possessing multiple structure.
Such as, may be configured as the structure being sequentially laminated with the first electrode forming layer (110-1), the second electrode forming layer (110-2), the 3rd electrode forming layer (110-3), now, it is preferably configured as, in forming first electrode forming layer (110-1) of above-mentioned n-electrode cambium layer (110), the second electrode forming layer (110-2), the 3rd electrode forming layer (110-3), band-gap energy more reduces the closer to top.
Namely, for instance be formed as Al component ratio and meet the condition of " the first electrode forming layer (110-1) > the second electrode forming layer (110-2) > the 3rd electrode forming layer (110-3) ".
Why so constitute, it is because following reason: in the first electrode forming layer (110-1), the second electrode forming layer (110-2), the 3rd electrode forming layer (110-3), Al component ratio is made more to reduce the closer to top, and band-gap energy is more reduced the closer to top, thus n-type metal level (115) is formed at the part that Al component ratio is relatively low, there is the effect improving contact performance.
It addition, above-mentioned n-electrode cambium layer (110) can certainly be formed as gradient (gradation) form that component ratio more reduces the closer to top.
N-electrode cambium layer (110) described above can the regrowth by selective area growth method (selectiveareagrowth), specifically, selective area growth method can be applied and make AlGaN or GaN layer regrowth, form above-mentioned n-electrode cambium layer (110).
More specifically, the process that can make semiconductor growth layer by forming, in the exposed surface of above-mentioned n-type semiconductor layer (100), a part of opening making above-mentioned dielectric layer after dielectric layer, forming above-mentioned n-electrode cambium layer (110), above-mentioned dielectric layer is by SiO2, SiOx, SiN, SiNx, Al2O3Constitute with at least one in GaO.
Additionally, as shown in Figure 3 a, for above-mentioned n-electrode cambium layer (110), as long as possess the form of above-mentioned n-electrode cambium layer (110) in the part of exposed surface of above-mentioned n-type semiconductor layer (100) or entirety, just can apply various form, for instance be formed as the finger-type of striped form for being separated from each other, be separated from each other and multiple n-type electrode layer is formed as the round point shape etc. of island form.
As mentioned above, in the part of exposed surface of above-mentioned n-type semiconductor layer (100) or n-electrode cambium layer (110) is integrally formed, in the way of covering above-mentioned n-electrode cambium layer (110), n-type metal level (115) is formed in the upside of the exposed surface of above-mentioned n-type semiconductor layer (100), and make above-mentioned n-electrode cambium layer (110) compared with above-mentioned n-type semiconductor layer (100), band-gap energy is little, it is thus possible to obtain the nitride-based semiconductor ultraviolet ray emitting element that electrical characteristics obtain improving, specifically, improve the contact resistance of n-electrode (120), reduce the voltage drop produced at electrode, thus reducing the running voltage of element, but also the light conversion efficiency of nitride-based semiconductor ultraviolet ray emitting element can be improved.
The present invention, with reference to accompanying drawing, is illustrated centered by preferred embodiment, but those skilled in the art can should be understood that without departing from the scope of the invention from such record, can carry out various apparent deformation. Therefore, the scope of the present invention should be explained according to the claims recorded in the way of including such many variation.
Claims (13)
1. a nitride-based semiconductor ultraviolet ray emitting element, it includes the n-type semiconductor layer, active layer and the p-type semiconductor layer that stack gradually on substrate, and possesses the n-electrode for applying electric current and p-electrode,
Described nitride-based semiconductor ultraviolet ray emitting element is characterised by,
The part of exposed surface or entirety in the described n-type semiconductor layer exposed by a part for described p-type semiconductor layer, active layer and described n-type semiconductor layer is etched possess n-electrode cambium layer, n-type metal level is formed to cover the cambial mode of described n-electrode in the upside of the exposed surface of described n-type semiconductor layer, described n-electrode cambium layer is compared with described n-type semiconductor layer, and band-gap energy is little.
2. nitride-based semiconductor ultraviolet ray emitting element according to claim 1, it is characterised in that
Described n-type semiconductor layer is by AlzGa1-zThe component ratio of N (0≤z≤1) is formed, and described n-electrode cambium layer is by AluGa1-u(0≤u≤1, < component ratio z) is formed u N, thus described n-electrode cambium layer is compared with described n-type semiconductor layer, band-gap energy is little.
3. nitride-based semiconductor ultraviolet ray emitting element according to claim 1, it is characterised in that
Described n-electrode cambium layer is formed as possessing multiple structure.
4. nitride-based semiconductor ultraviolet ray emitting element according to claim 3, it is characterised in that
Form the cambial multilamellar of described n-electrode and be configured to the Rotating fields that band-gap energy more reduces the closer to top.
5. nitride-based semiconductor ultraviolet ray emitting element according to claim 1, it is characterised in that
Described n-electrode cambium layer is formed as band-gap energy along with gradient (gradation) form gradually decreased near top.
6. nitride-based semiconductor ultraviolet ray emitting element according to claim 1, it is characterised in that
Described n-electrode cambium layer regrowth by selective area growth method.
7. nitride-based semiconductor ultraviolet ray emitting element according to claim 6, it is characterised in that
Described n-electrode cambium layer grows by the following method: the exposed surface in described n-type semiconductor layer forms dielectric layer, after a part of opening making described dielectric layer, makes semiconductor growth layer.
8. nitride-based semiconductor ultraviolet ray emitting element according to claim 7, it is characterised in that
Described dielectric layer is by SiO2、SiOx、SiN、SiNx、Al2O3Constitute with at least one in GaO.
9. nitride-based semiconductor ultraviolet ray emitting element according to claim 1, it is characterised in that
This nitride-based semiconductor ultraviolet ray emitting element also includes electronic barrier layer, and this electronic barrier layer is arranged between described active layer and described p-type semiconductor layer.
10. nitride-based semiconductor ultraviolet ray emitting element according to claim 1, it is characterised in that
Described n-electrode cambium layer is formed as the striped form being separated from each other.
11. nitride-based semiconductor ultraviolet ray emitting element according to claim 1, it is characterised in that
Described n-electrode cambium layer is formed as the annular form being separated from each other.
12. nitride-based semiconductor ultraviolet ray emitting element according to claim 1, it is characterised in that
Described n-electrode cambium layer includes dominant shape stratification and the multiple accessory cambiums extended from described dominant shape stratification.
13. nitride-based semiconductor ultraviolet ray emitting element according to claim 1, it is characterised in that
Described n-electrode cambium layer includes at least arbitrary form in following form and constitutes: the striped form being separated from each other, the annular form being separated from each other and include dominant shape stratification and the form of multiple accessory cambiums extended from described dominant shape stratification.
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| KR20130135335 | 2013-11-08 | ||
| KR10-2013-0135335 | 2013-11-08 | ||
| PCT/KR2014/010224 WO2015068980A1 (en) | 2013-11-08 | 2014-10-29 | Nitride semiconductor ultraviolet light-emitting device |
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| CN112652691A (en) * | 2020-12-30 | 2021-04-13 | 深圳第三代半导体研究院 | Light emitting diode and manufacturing method thereof |
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| DE102018120490A1 (en) | 2018-08-22 | 2020-02-27 | Osram Opto Semiconductors Gmbh | OPTOELECTRONIC SEMICONDUCTOR COMPONENT WITH A SEMICONDUCTOR CONTACT LAYER AND METHOD FOR PRODUCING THE OPTOELECTRONIC SEMICONDUCTOR COMPONENT |
| WO2022050510A1 (en) * | 2020-09-04 | 2022-03-10 | 주식회사 포톤웨이브 | Ultraviolet light-emitting device and light-emitting device package comprising same |
| KR102385672B1 (en) * | 2020-09-04 | 2022-04-13 | 주식회사 포톤웨이브 | Ultraviolet light emitting device and light emitting device package including the same |
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| CN1245979A (en) * | 1998-08-21 | 2000-03-01 | 夏普公司 | Semiconductor light emitting diode |
| JP2012089754A (en) * | 2010-10-21 | 2012-05-10 | Uv Craftory Co Ltd | Nitride semiconductor ultraviolet light-emitting element |
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| JP2005244201A (en) * | 2004-01-28 | 2005-09-08 | Matsushita Electric Ind Co Ltd | Semiconductor luminous element and manufacturing method of the same |
| KR20070028095A (en) * | 2005-09-07 | 2007-03-12 | 엘지전자 주식회사 | Light emitting diode having low resistance |
| JP5186800B2 (en) * | 2007-04-28 | 2013-04-24 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device, light emitting device including the same, and method for manufacturing nitride semiconductor light emitting device |
| KR101026059B1 (en) * | 2007-12-21 | 2011-04-04 | 삼성엘이디 주식회사 | Nitride Semiconductor Light Emitting Device and Menufacturing Method of the Same |
| JP2011142231A (en) * | 2010-01-07 | 2011-07-21 | Hitachi Cable Ltd | Semiconductor light emitting element, led lamp, and method of manufacturing the semiconductor light emitting element |
| US8822976B2 (en) * | 2011-03-23 | 2014-09-02 | Soko Kagaku Co., Ltd. | Nitride semiconductor ultraviolet light-emitting element |
| US8748919B2 (en) * | 2011-04-28 | 2014-06-10 | Palo Alto Research Center Incorporated | Ultraviolet light emitting device incorporating optically absorbing layers |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1245979A (en) * | 1998-08-21 | 2000-03-01 | 夏普公司 | Semiconductor light emitting diode |
| JP2012089754A (en) * | 2010-10-21 | 2012-05-10 | Uv Craftory Co Ltd | Nitride semiconductor ultraviolet light-emitting element |
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| CN112652691A (en) * | 2020-12-30 | 2021-04-13 | 深圳第三代半导体研究院 | Light emitting diode and manufacturing method thereof |
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