CN105684069A - Display device using semiconductor light emitting device - Google Patents

Display device using semiconductor light emitting device Download PDF

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Publication number
CN105684069A
CN105684069A CN201480058629.XA CN201480058629A CN105684069A CN 105684069 A CN105684069 A CN 105684069A CN 201480058629 A CN201480058629 A CN 201480058629A CN 105684069 A CN105684069 A CN 105684069A
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CN
China
Prior art keywords
electrode
connecting line
substrate layer
display device
light emitting
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201480058629.XA
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Chinese (zh)
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CN105684069B (en
Inventor
李炳俊
金治璇
金银惠
方圭铉
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LG Electronics Inc
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LG Electronics Inc
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Publication of CN105684069A publication Critical patent/CN105684069A/en
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Publication of CN105684069B publication Critical patent/CN105684069B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • H—ELECTRICITY
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/111—Pads for surface mounting, e.g. lay-out
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/05—Flexible printed circuits [FPCs]
    • H05K2201/051—Rolled
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10128—Display
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4682—Manufacture of core-less build-up multilayer circuits on a temporary carrier or on a metal foil

Abstract

The present disclosure provides a display device including a wiring substrate having a first substrate layer and a second substrate layer, a conductive adhesive layer configured to cover the wiring substrate, and a plurality of semiconductor light emitting devices coupled to the conductive adhesive layer, and electrically connected to a first electrode and a second electrode, wherein the first electrode is disposed at the first substrate layer, and the second substrate layer includes one surface facing the conductive adhesive layer and the other surface covering the first electrode, and an auxiliary electrode electrically connected to the first electrode and the second electrode are disposed on one surface of the second substrate layer.

Description

Use the display device of light emitting semiconductor device
Technical field
It relates to a kind of display device, and more particularly, to a kind of display device using light emitting semiconductor device.
Background technology
In recent years, in Display Technique field, developed the display device with the such as excellent specific property of thin external form, flexibility etc. On the contrary, the representative of current business-like main display is liquid crystal display (LCD) and active matrix organic light-emitting diode (AMOLED).
But, there is the problem that such as response time is fast not, be difficult to flexibility in case of an lcd, and there is the shortcoming that the such as life-span is short, productivity is good and less flexible not when AMOLED.
On the other hand, light emitting diode (LED) is the known luminescent device for converting electrical current into light, and using the red LED of GaAsP compound semiconductor with carrying out commercialization together with the green LED of GaP:N from 1962, light emitting diode (LED) has been used as the light source for showing image in the electronic installation include information-communication device. Therefore, light emitting semiconductor device can be used to realize flexible display, thus proposing the scheme for solving described problem.
And, furthermore it is possible to visualize the structure of the connecting line of the flexible display being adapted for use with light emitting semiconductor device.
Summary of the invention
Technical problem
The one side of the disclosure is in that to provide a kind of novel display device with flexibility being different from prior art.
Another aspect of the present disclosure is in that the display device providing a kind of light emitting semiconductor device to be implemented as sub-pixel.
The solution of problem
In order to complete above-mentioned task, may include that circuit board, described circuit board have first substrate layer and second substrate layer according to the display device of a kind of embodiment of the disclosure; Conductive adhesive, described conductive adhesive is configured to cover described circuit board; And multiple light emitting semiconductor device, the plurality of light emitting semiconductor device is coupled to described conductive adhesive, and is electrically connected to the first electrode and the second electrode. Described first electrode can be arranged on described first substrate layer place, and described second substrate layer can include another surface of a surface towards described conductive adhesive and described first electrode of covering, and the auxiliary electrode electrically connected with described first electrode and described second electrode can be arranged on a surface of described second substrate layer.
According to a kind of example relevant with the disclosure, the connecting line part for described first electrode and described second electrode are connected to the driver element of the plurality of light emitting semiconductor device can be formed on a surface towards another surface described in described second substrate layer of described first substrate layer.
Described connecting line part may include that the first connecting line, and described first connecting line extends along the length direction of described first electrode from described first electrode; And second connecting line, described second connecting line is electrically connected to described second electrode via the through hole on described first substrate layer, and upwardly extends in the side that the length direction with described second electrode intersects.
The left line at the both sides place that described second connecting line can include being separately positioned on around described first connecting line and right line.
According to another example relevant with the disclosure, the connecting line part for described first electrode and described second electrode are connected to the driver element of the plurality of light emitting semiconductor device can be formed on two surfaces of described first substrate layer.
Described connecting line part may include that the first connecting line, described first connecting line be arranged on described first substrate layer on a surface on another surface described in described second substrate layer; And second connecting line, described second connecting line is formed on another surface of described first substrate layer to be electrically connected to described second electrode.
Can being provided on the thickness direction of described circuit board at least partially and overlap each other of described first connecting line and described second connecting line.
The through hole corresponded to each other can be formed on described first substrate layer and described second substrate layer so that described second electrode to be electrically connected at least some of of described second connecting line overlapping with described first connecting line. Connection through hole for described second connecting line extends to a surface of described first substrate layer can be formed on described first substrate layer, and described second connecting line can be connected to described driver element via described connection through hole in the plane identical with the plane of described first connecting line.
Connector for described driver element is connected to described first connecting line and described second connecting line can be formed to cover two surfaces of described first substrate layer, in order to by described second connecting line with the different plane of described first connecting line on be connected to described driver element. Any portion of described second connecting line can extend in one direction, and another part of described second connecting line can upwardly extend in the side in opposite direction with one. Described circuit board can also include basal substrate, and described basal substrate covers another surface described of described first substrate layer.
According to the another example relevant with the disclosure, described second substrate layer place can be arranged on described second electrode runs parallel and with the connecting hole of described first electrode crossing, to form the passage for described auxiliary electrode being electrically connected to described first electrode.
Described auxiliary electrode can be any one in multiple auxiliary electrode, and the plurality of auxiliary electrode can be arranged in single connecting hole. Described first electrode can be formed to disconnect with multiple parts, and the extra conductor for being coated with can be arranged on the plurality of part place.
Described conductor can be formed on the plurality of part place by electroless plating. Described auxiliary electrode can pass through to electroplate to be formed on a surface of described conductor.
It addition, the disclosure may include that circuit board, described circuit board has basal layer and substrate layer; Conductive adhesive, described conductive adhesive is configured to cover described substrate layer; And multiple light emitting semiconductor device, the plurality of light emitting semiconductor device is coupled to described conductive adhesive, and is electrically connected to the first electrode and the second electrode. Disclose a kind of display device, wherein, described first electrode is arranged on described substrate layer place, and described second electrode is arranged on described conductive adhesive place, and for the connecting line part that described first electrode and described second electrode are connected with the driver element of the plurality of light emitting semiconductor device is formed on described substrate layer place.
Described connecting line part may include that the first connecting line, described first connecting line be arranged on described substrate layer on a surface of described conductive adhesive, and from described first electrode extend; And second connecting line, described second connecting line is formed on another surface of described substrate layer, and is electrically connected to described second electrode. Through hole for described second electrode is electrically connected to described second connecting line can be formed on described conductive adhesive.
The beneficial effect of the invention
According to the disclosure with above-mentioned configuration, the distance of light emitting semiconductor device can be sufficiently large, and conductive adhesive has flexibility, thus realizing rollable display device.
It addition, according to the disclosure, connecting line can overlap each other in Different Plane, thus further reduce the area of display device.
Accompanying drawing explanation
Fig. 1 is the concept map illustrating the display device using light emitting semiconductor device according to embodiment of the present disclosure;
Fig. 2 is the partial enlarged drawing of the part " A " in Fig. 1, and Fig. 3 A and Fig. 3 B is along the sectional view intercepted of line B-B and the C-C in Fig. 2;
Fig. 4 is the concept map illustrating the flip-chip semiconductor luminescent device in Fig. 3 A;
Fig. 5 A to Fig. 5 C illustrates to realize the various forms of concept maps of color for combining with flip-chip semiconductor luminescent device;
Fig. 6 is the sectional view illustrating the method manufacturing the display device using light emitting semiconductor device according to the disclosure;
Fig. 7 is the axonometric chart of the display device using light emitting semiconductor device illustrating another embodiment according to the disclosure;
Fig. 8 is the sectional view intercepted of the line C-C along Fig. 7;
Fig. 9 is the concept map illustrating the vertical semiconductor luminescent device in Fig. 8;
Figure 10 is the exploded view illustrating the structure according to the connecting line in the display device of the disclosure;
Figure 11 A is the plane graph illustrating the display device in Figure 10;
Figure 11 B and Figure 11 C is the line A-A along Figure 11 A and the line B-B sectional view intercepted respectively;
Figure 12 is the exploded view illustrating the structure according to the connecting line in the display device of the another embodiment of the disclosure;
Figure 13 A is the plane graph illustrating the display device in Figure 12;
Figure 13 B and Figure 13 C is the line A-A along Figure 13 A and the line B-B sectional view intercepted respectively;
Figure 14 is the sectional view illustrating the structure according to the connecting line in the display device of a further embodiment of the disclosure;
Figure 15 is the exploded view illustrating the structure according to the connecting line in the display device of a further embodiment of the disclosure;
Figure 16 A is the plane graph illustrating the display device in Figure 15;
Figure 16 B and Figure 16 C is the line A-A along Figure 16 A and the line B-B sectional view intercepted respectively;
Figure 17 is the exploded view illustrating the structure according to the connecting line in the display device of a further embodiment of the disclosure;
Figure 18 A is the plane graph illustrating the display device in Figure 12; And
Figure 18 B and Figure 18 C is the line A-A along Figure 18 A and the line B-B sectional view intercepted respectively.
Detailed description of the invention
Hereinafter, will be described in detail with reference to the accompanying drawings embodiments disclosed herein, and same or analogous element refers to identical accompanying drawing labelling and is left out attached graph laplacian, and the unnecessary description that will omit them. It is intended merely to facilitate the description of this specification for the suffix " module " of composed component disclosed in being described below or " unit ", and this suffix itself does not give any particular meaning or function. And, describing in embodiments disclosed herein, when the specific descriptions of known technology involved in the present invention are judged as when putting of the fuzzy present invention, by this detailed description of omission. Also, it is noted that illustrate that accompanying drawing is for only for ease of explanation idea of the invention, and therefore, they should not be construed as being limited techniques disclosed herein design by accompanying drawing.
Moreover it will be understood that when the element of such as layer, region or substrate be referred to as " " another element " on " time, this element directly on this another element, or can also can insert intermediary element between which.
Display device disclosed herein can include portable phone, smart phone, laptop computer, digital broadcast terminal, personal digital assistant (PDA), portable media player (PMP), navigator, template PC, flat board PC, super basis, numeral TV, desk computer etc. But, the person skilled in the art will easily understand, configuration disclosed herein go for any can display device, even if it be follow-up will exploitation new product type.
Fig. 1 is the concept map illustrating the display device using light emitting semiconductor device according to embodiment of the present disclosure.
With reference to the accompanying drawings, the information processed in the controller of display device 100 can utilize flexible display to show.
Flexible display can include flexibility, flexible, can distort, collapsible and rollable display. Such as, flexible display can be the display manufactured on thin flexible base board, it while keeping the display characteristic of flat faced display of the prior art can sensitive paper open equally be twisted, bend, folding or curling.
In the configuration (such as, having the configuration of unlimited radius of curvature, hereinafter referred to as " the first configuration ") that flexible display is not twisted, the viewing area of flexible display becomes plane. In the configuration (such as, having the configuration of finite radius, hereinafter referred to as " the second configuration ") that under configuring first, flexible display is distorted by external force, its viewing area becomes curved surface. As it is shown in the figures, the information of display can be shown in the visual information on curved surface under configuring second. This visual information can be realized by the light emission of sub-pixel individually controlling to arrange in the matrix form. Sub-pixel represents the minimum unit for realizing a kind of color.
The sub-pixel of flexible display can be realized by light emitting semiconductor device. According to the disclosure, it is shown that light emitting diode (LED) is as a type of light emitting semiconductor device. Light emitting diode can be formed with small size, even if also to perform the effect of sub-pixel by this under being configured second.
Hereinafter, the flexible display using light emitting diode to realize it is more fully described with reference to the accompanying drawings.
Fig. 2 is the partial enlarged drawing of the part " A " in Fig. 1, and Fig. 3 A and Fig. 3 B is the line B-B along Fig. 2 and the line C-C sectional view intercepted, Fig. 4 is the concept map illustrating the flip-chip semiconductor luminescent device in Fig. 3 A, and Fig. 5 A to Fig. 5 C illustrates to realize the various forms of concept maps of color for combining with flip-chip semiconductor luminescent device.
According to the accompanying drawing in Fig. 2, Fig. 3 A and Fig. 3 B, it is shown that use the display device 100 of passive matrix (PM) type light emitting semiconductor device as the display device 100 using light emitting semiconductor device. But, illustrated below it is readily adaptable for use in active matrix (AM) type light emitting semiconductor device.
Display device 100 can include substrate the 110, first electrode 120, conductive adhesive the 130, second electrode 140 and multiple light emitting semiconductor device 150.
Substrate 110 can be flexible base board. Substrate 110 can include glass or polyimides (PI), to realize flexible display apparatus. If it addition, it is flexible material, then can use any one of such as PEN (PEN), polyethylene terephthalate (PET) etc. And, substrate 110 can be any one in transparent material and opaque material.
Substrate 110 can be provided with the circuit board of the first electrode 120, and therefore the first electrode 120 can be disposed on substrate 110.
With reference to the accompanying drawings, insulating barrier 160 can be arranged on the substrate 110 being provided with the first electrode 120, and auxiliary electrode 170 can be disposed on insulating barrier 160. In this case, insulating barrier 160 is deposited over the circuit board that the configuration on substrate 110 can be one. More specifically, it is possible to utilize the insulation of such as polyimides (PI), PET, PEN etc. and flexible material to be attached in substrate 110 by insulating barrier 160 to form single circuit board.
It is disposed in insulating barrier 160 as the auxiliary electrode 170 being used for being electrically connected to the first electrode 120 electrode of light emitting semiconductor device 150, and is arranged in correspondence with the position of the first electrode 120. Such as, auxiliary electrode 170 has a shape, and can be electrically connected to the first electrode 120 by the electrode hole 171 passed through through insulating barrier 160. Electrode hole 171 can be formed by filled conductive material in through-holes.
With reference to accompanying drawing, conductive adhesive 130 can be formed on a surface of insulating barrier 160, but the disclosure can be not necessarily limited to this. It is also possible that there are for example conductive adhesive 130 is arranged on the structure on substrate 110 when not having insulating barrier 160. Being arranged in the structure on substrate 110 in conductive adhesive 130, conductive adhesive 130 can perform the effect of insulating barrier.
Conductive adhesive 130 can be have the layer of viscosity and electric conductivity, and is this, and conductive material and jointing material can be blended in conductive adhesive 130. And, conductive adhesive 130 can have flexibility, thus allowing flexibility function in a display device.
For this example, conductive adhesive 130 can be anisotropic conductive film (ACF), anisotropic conductive paste, the solution etc. that comprises conductive particle. Conductive adhesive 130 can allow the electrical interconnection in a z-direction through its thickness, but can be configured to the layer on its horizontal x-y direction with electric insulation. Therefore, conductive adhesive 130 can be referred to as z-axis conductive layer (but, hereinafter referred to as " conductive adhesive ").
Anisotropic conductive film is to have the film of the form that anisotropic conductive medium mixes mutually with insulation substrate, and therefore, when it is applied heat and pressure, only its specific part can have electric conductivity by anisotropic conductive medium. Hereinafter, anisotropic conductive film is applied heat and pressure, but other method can be used for anisotropic conductive film, so that it partly has electric conductivity. Described method can include only it being applied any one in heat and pressure, UV solidification etc.
It addition, anisotropic conductive medium can be conducting sphere or granule. With reference to the accompanying drawings, in the present embodiment, anisotropic conductive film is to have the film of the form that anisotropic conductive medium mixes mutually with insulation substrate, and therefore, when it is applied heat and pressure, only its specific part can have electric conductivity by conducting sphere. Anisotropic conductive film may be at following state: wherein, the core with conductive material comprises multiple granule being coated with by the insulating barrier with polymeric material, and in this case, it can have electric conductivity while destroying insulating barrier in the part being applied in heat and pressure by core. Here it is possible to make core deformation realize the layer with two surfaces, object contacts the two surface on the thickness direction of film. For example more specifically, anisotropic conductive film entirety is applied heat and pressure, and by being partly formed the electrical connection on z-axis direction relative to the difference in height of the pairing object utilizing anisotropic conductive film to adhere to.
For another example, anisotropic conductive film may be at comprising the state of multiple granule, and wherein, conductive material is applied on insulating core. In this case, the part being applied in heat and pressure can be converted (pressurize and adhere to) for conductive material, to have electric conductivity on the thickness direction of film. For another example, it can be formed have electric conductivity on the thickness direction of film, and wherein, conductive material is in a z-direction through insulation substrate. In this case, conductive material can have slightly pointed end.
With reference to the accompanying drawings, anisotropic conductive film can be fixing array anisotropic conductive film (ACF), and this fixing array anisotropic conductive film (ACF) is configured to have the form that conducting sphere is inserted in a surface of insulation substrate. More specifically, insulation substrate is formed by jointing material, and conducting sphere is arranged on the bottom of insulation substrate thick and fast, and when it is applied heat and pressure, this substrate is modified with conducting sphere, thus having electric conductivity in the perpendicular direction.
But, the disclosure can be not necessarily limited to this, and anisotropic conductive film can all be allowed to have form that conducting sphere mixes mutually with insulation substrate randomly or be configured with the form (double; two ACF) etc. that conducting sphere is disposed therein multiple layers of any layer place.
Can be the slurry that conducting sphere mixes mutually with insulation and adhesive substrate as being attached to slurry with the anisotropic conductive paste of the form of conducting sphere. It addition, the solution comprising conductive particle can be the solution of the form comprising conductive particle or nano-particle.
Referring again to accompanying drawing, the second electrode 140 is positioned at insulating barrier 160 place, to separate with auxiliary electrode 170. In other words, conductive adhesive 130 is arranged on the insulating barrier 160 being provided with auxiliary electrode 170 and the second electrode 140.
When forming conductive adhesive 130 when being provided with auxiliary electrode 170 and the second electrode 140, and subsequently along with apply heat and pressure light emitting semiconductor device 150 with the form of flip-chip connected time, light emitting semiconductor device 150 is electrically connected to the first electrode 120 and the second electrode 140.
With reference to Fig. 4, light emitting semiconductor device can be flip-chip semiconductor luminescent device.
Such as, light emitting semiconductor device can include p-type electrode 156, be formed with the p-type semiconductor layer 155 of p-type electrode 156, the active layer 154 formed in p-type semiconductor layer 155, the n-type semiconductor layer 153 formed on active layer 154 and the n-type electrode 152 being separately provided in n-type semiconductor layer 153 with p-type electrode 156 in the horizontal direction. In this case, p-type electrode 156 can pass through conductive adhesive 130 and be electrically connected to welding portion 179, and n-type electrode 152 may be electrically connected to the second electrode 140.
Referring again to Fig. 2, Fig. 3 A and Fig. 3 B, auxiliary electrode 170 can be formed in one direction in the way of elongated, to be electrically connected to multiple light emitting semiconductor device 150. Such as, the left p-type electrode of the light emitting semiconductor device around auxiliary electrode and right p-type electrode may be electrically connected to an auxiliary electrode.
More specifically, light emitting semiconductor device 150 is forced in conductive adhesive 130, and by so, only the part between part and n-type electrode 152 and second electrode 140 of light emitting semiconductor device 150 between p-type electrode 156 and the auxiliary electrode 170 of light emitting semiconductor device 150 has electric conductivity, and remainder does not have electric conductivity, because not pushing away (push-down) under light emitting semiconductor device.
It addition, multiple light emitting semiconductor devices 150 constitute light emitting array, and fluorescence coating 180 is formed on this light emitting array.
Luminescent device can include having the different multiple light emitting semiconductor devices from brightness value. Each light emitting semiconductor device 150 all constitutes sub-pixel, and is electrically connected to the first electrode 120. For example, it is possible to there is multiple first electrode 120, and such as, light emitting semiconductor device is according to plurality of rows, and the light emitting semiconductor device of each row may be electrically connected to any one in multiple first electrode.
It addition, light emitting semiconductor device can be connected with flip chip version, and therefore, light emitting semiconductor device is at transparent dielectric grown on substrates. It addition, such as, light emitting semiconductor device can be nitride semiconductor photogenerator. Light emitting semiconductor device 150 has the light characteristic of excellence, even and if therefore it is smaller, it is also possible to configure each sub-pixel.
With reference to the accompanying drawings, spaced walls 190 can be formed between light emitting semiconductor device 150. In this case, spaced walls 190 can perform effect separate for each sub-pixel, and collectively forms as entirety with conductive adhesive 130. Such as, when light emitting semiconductor device 150 is inserted in anisotropic conductive film, the substrate of anisotropic conductive film can form spaced walls.
It addition, when the substrate of anisotropic conductive film is black, when not having additional black insulator, spaced walls 190 can have reflection characteristic, increases contrast simultaneously.
For another example, it is possible to be separately provided reflection interval wall by spaced walls 190. In this case, the purpose according to display device, spaced walls 190 can include black or white insulator. When using the spaced walls of white insulator, it can have the effect strengthening reflectance, and increases contrast while having reflection characteristic.
Fluorescence coating 180 may be located at the outer surface of light emitting semiconductor device 150. Such as, light emitting semiconductor device 150 is the blue semiconductor luminescent device launching blue (B) light, and fluorescence coating 180 performs to be converted to blue (B) light the effect of the color of sub-pixel. Fluorescence coating 180 can be the red fluorescence layer 181 or the green fluorescent layer 182 that constitute each pixel.
In other words, the red-emitting phosphors 181 that blue light can be converted to redness (R) light can be deposited on blue semiconductor luminescent device 151 in the position realizing red sub-pixel, and the green-emitting phosphor 182 that blue light can be converted to green (G) light can be deposited on blue semiconductor luminescent device 151 in the position realizing green sub-pixels. It addition, blue semiconductor luminescent device 151 can be used only singly in the position realizing blue subpixels. In this case, red (R), green (G) and blue (B) sub-pixel can realize a pixel. More specifically, the fluorophor of a kind of color can be deposited along each row of the first electrode 120. Therefore, a line on the first electrode 120 can be control the electrode of a kind of color. In other words, it is possible to set gradually redness (R), green (G) and blue (B), thus realizing sub-pixel.
But, the disclosure can be not necessarily limited to this, and light emitting semiconductor device 150 can be combined to realize the sub-pixel of such as red (R), green (G) and blueness (B) with quantum dot (QD) rather than fluorophor.
It addition, black matrix 191 can be arranged between each fluorescence coating with enhancing contrast ratio. In other words, the contrast that black matrix 191 can highlight.
But, the disclosure can be not necessarily limited to this, and for realizing blueness, another red and green structure is readily adaptable for use in this.
With reference to Fig. 5 A, each light emitting semiconductor device 150 can utilize the high power lighting devices launching the various light including blueness to realize, wherein, mainly use gallium nitride (GaN), and be added to indium (In) and/or aluminum (Al).
In this case, light emitting semiconductor device 150 can be red, green and blue semiconductor luminescent device respectively, to realize each sub-pixel. Such as, red, green and blue semiconductor luminescent device (R, G, B) is alternately set, and red, green and blue subpixels realize a pixel by red, green and blue semiconductor luminescent device, thus realizing full-color EL display.
With reference to Fig. 5 B, light emitting semiconductor device can have white luminous device (W), and this white luminous device (W) is equipped with yellow fluorescence layer for each element. In this case, red fluorescence layer 181, green fluorescent layer 182 and blue fluorescent body 183 can be arranged on white luminous device (W), to realize sub-pixel. It addition, on white luminous device (W), reuse redness, green and blue chromatic filter can be used to realize sub-pixel.
With reference to Fig. 5 C, it is also possible to having a structure in which, red fluorescence layer 181, green fluorescent layer 182 and blue fluorescent body 183 can be arranged on ultraviolet light emitting device (UV). So, light emitting semiconductor device can be used in until on the whole region of ultraviolet light (UV) and visible ray, and can be extended to the form that ultraviolet light (UV) is used as the light emitting semiconductor device of driving source.
Consider further that present exemplary, light emitting semiconductor device 150 are disposed in conductive adhesive 130, to configure the sub-pixel in display device. Light emitting semiconductor device 150 can have the light characteristic of excellence, even and if therefore it is smaller, it is also possible to configure each sub-pixel. The size of each light emitting semiconductor device 150 length in its side less than 80 μm, and can utilize the element of rectangular or square when shape to be formed. When the element of rectangular shape, its size can less than 20 × 80 μm.
Even if it addition, when the light emitting semiconductor device 150 of the square shape that the length of side is 10 μm is used to sub-pixel, it also will show enough brightness to realize display device. It is therefoie, for example, when the side of sub-pixel is of a size of 600 μm and it remains the rectangular pixels that side is 300 μm, the relative distance between light emitting semiconductor device becomes sufficiently large. Therefore, in such a case, it is possible to realize the flexible display apparatus with HD picture quality.
The display device using above-mentioned light emitting semiconductor device will be manufactured by novel manufacture method. Hereinafter, with reference to Fig. 6, this manufacture method will be described.
Fig. 6 is the sectional view illustrating the method manufacturing the display device using light emitting semiconductor device according to the disclosure.
With reference to this figure, first, the insulating barrier 160 being provided with auxiliary electrode 170 and the second electrode 140 forms conductive adhesive 130. Insulating barrier 160 is deposited on first substrate 110, and to form a substrate (or circuit board), and the first electrode 120, auxiliary electrode 170 and the second electrode 140 are arranged on circuit board place. In this case, the first electrode 120 and the second electrode 140 can be set according to direction perpendicular to one another. It addition, first substrate 110 and insulating barrier 160 can comprise glass or polyimides (PI) respectively, to realize flexible display apparatus.
Such as, conductive adhesive 130 can be realized by anisotropic conductive film, and is this, and anisotropic conductive film can be applied on the substrate being provided with insulating barrier 160.
Next, the second substrate 112 being provided with multiple light emitting semiconductor device 150 being arranged so that, light emitting semiconductor device 150 is towards auxiliary electrode 170 and the second electrode 140, and the plurality of light emitting semiconductor device 150 is corresponding with the position of auxiliary electrode 170 and the second electrode 140 and constitutes each pixel.
In this case, the second substrate 112 as the growth substrate for growing light emitting semiconductor device 150 can be sapphire substrate or silicon substrate.
When light emitting semiconductor device is formed in units of wafer, it can have the gap and size that are capable of display device, and is therefore efficiently used for display device.
It follows that circuit board to be hot-pressed onto second substrate 112. For example, it is possible to by applying ACF pressure head by circuit board and second substrate 112 hot pressing to each other. Circuit board and second substrate 112 use hot pressing to be bonded to each other. Owing to being had the characteristic of the anisotropic conductive film of electric conductivity by hot pressing, only the part between light emitting semiconductor device 150 and auxiliary electrode 170 and the second electrode 140 can have electric conductivity, thus allowing electrode and light emitting semiconductor device 150 to be electrically connected to each other. Now, light emitting semiconductor device 150 can be inserted in anisotropic conductive film, thus the spaced walls formed between light emitting semiconductor device 150.
It follows that remove second substrate 112. It is, for example possible to use laser lift-off (LLO) or chemical stripping (CLO) method remove second substrate 112.
Finally, second substrate 112 is removed with outside being exposed to by light emitting semiconductor device 150. Can on the circuit board being connected to light emitting semiconductor device 150 silicon-coating oxide (SiOx) etc., to form transparent insulating layer (not shown).
It addition, it is additionally may included in the technique forming fluorescence coating on a surface of light emitting semiconductor device 150. Such as, light emitting semiconductor device 150 could be for launching the blue semiconductor luminescent device of blue (B) light, and for blueness (B) light is converted to the redness of the color of sub-pixel or green-emitting phosphor can on blue semiconductor luminescent device a surface cambium layer.
The manufacture method or the structure that use the display device of above-mentioned light emitting semiconductor device can be revised according to various forms. For this example, above-mentioned display device goes for vertical semiconductor luminescent device. Hereinafter, with reference to Fig. 5 and Fig. 6, vertical stratification will be described.
It addition, according to following modified example or embodiment, same or analogous accompanying drawing labelling is designated as the same or analogous configuration with above-mentioned example, and descriptions thereof will be replaced by description before.
Fig. 7 is the axonometric chart of the display device using light emitting semiconductor device illustrating another embodiment according to the disclosure. Fig. 8 is the sectional view intercepted of the line C-C along Fig. 7, and Fig. 9 is the concept map illustrating the vertical semiconductor luminescent device in Fig. 8.
With reference to the accompanying drawings, display device can be the display device using passive matrix (PM) type vertical semiconductor luminescent device.
Display device can include substrate the 210, first electrode 220, conductive adhesive the 230, second electrode 240 and multiple light emitting semiconductor device 250.
Substrate 210 as the circuit board being provided with the first electrode 220 can include polyimides (PI), to realize flexible display apparatus. Alternatively, it is also possible to use any one, as long as it is insulation and flexible material.
First electrode 220 may be located on substrate 210, and utilizes the electrode with the bar shaped extended in one direction to be formed. First electrode 220 can be formed to perform the effect of data electrode.
Conductive adhesive 230 is formed on the substrate 210 being provided with the first electrode 220. Being similar to the display device that flip chip type luminescent device is employed, conductive adhesive 230 can be anisotropic conductive film (ACF), anisotropic conductive paste, the solution etc. that comprises conductive particle. But, this embodiment illustrates the situation that conductive adhesive 230 is realized by anisotropic conductive film.
Being set under state over the substrate 210 and with after-applied heat and pressure by time connected for light emitting semiconductor device 250 when anisotropic conductive film is in the first electrode 220, light emitting semiconductor device 250 is electrically connected to the first electrode 220. Now, light emitting semiconductor device 250 can be preferably disposed on the first electrode 220.
When heat applied as described above and pressure, partly there is due to anisotropic conductive film electric conductivity in a thickness direction, so generating electrical connection. Therefore, anisotropic conductive film is divided into the part 231 in the thickness direction thereof with electric conductivity and the part 232 without electric conductivity.
It addition, anisotropic conductive film comprises adhesive composition, and therefore conductive adhesive 230 realizes the mechanical attachment between light emitting semiconductor device 250 and the first electrode 220 and electrically connects.
So, light emitting semiconductor device 250 is disposed in conductive adhesive 230, thus the independent sub-pixel configured in display device. Light emitting semiconductor device 250 can have the light characteristic of excellence, even and if therefore it is smaller, it is also possible to configure each sub-pixel. The size of each light emitting semiconductor device 250 less than 80 μm, and can be formed by the element of rectangular or square when shape in its side length. When the element of rectangular shape, its size can less than 20 × 80 μm.
Light emitting semiconductor device 250 can be vertical stratification.
Multiple second electrodes 240 being arranged on the direction intersected with the length direction of the first electrode 220 and being electrically connected to vertical semiconductor luminescent device 250 may be located between vertical semiconductor luminescent device.
With reference to Fig. 9, vertical semiconductor luminescent device can include p-type electrode 256, is formed with the p-type semiconductor layer 255 of p-type electrode 256, the active layer 254 formed in p-type semiconductor layer 255, the n-type semiconductor layer 253 formed on active layer 254 and form the n-type electrode 252 in n-type semiconductor layer 253. In this case, being positioned at the p-type electrode 256 bottom it can be electrically connected to the first electrode 220 by conductive adhesive 230, and the n-type electrode 252 being positioned at its top may be electrically connected to the second electrode 240, and this will be described later on. Electrode can be arranged in vertical semiconductor luminescent device 250 on the direction of up/down, thus providing the great advantage that can reduce chip size.
Referring again to Fig. 8, fluorescence coating 280 can be formed on a surface of light emitting semiconductor device 250. Such as, light emitting semiconductor device 250 is the blue semiconductor luminescent device 251 launching blue (B) light, and the fluorescence coating 280 of the color for blue (B) light is converted to sub-pixel can be provided thereon. In this case, fluorescence coating 280 can be the red-emitting phosphors 281 and the green-emitting phosphor 282 that constitute each pixel.
In other words, the red-emitting phosphors 281 that blue light can be converted to redness (R) light can be deposited on blue semiconductor luminescent device 251 in the position realizing red sub-pixel, and the green-emitting phosphor 282 that blue light can be converted to green (G) light can be deposited on blue semiconductor luminescent device 251 in the position realizing green sub-pixels. And, in the position realizing blue subpixels, it is possible to be used only singly blue semiconductor luminescent device 251. In this case, red (R), green (G) and blue (B) sub-pixel can realize a pixel.
But, the disclosure can be not necessarily limited to this, and in the display device that flip chip type luminescent device is employed, as it has been described above, for realizing blueness, another red and green structure is readily adaptable for use in this.
Considering further that present embodiment, the second electrode 240 is between light emitting semiconductor device 250, and is electrically connected to light emitting semiconductor device 250. Such as, light emitting semiconductor device 250 can be arranged according to multirow, and the second electrode 240 may be located between the row of light emitting semiconductor device 250.
Owing to constituting being at a distance sufficiently large between the light emitting semiconductor device 250 of each pixel, so the second electrode 240 may be located between light emitting semiconductor device 250.
Second electrode 240 can be formed with the electrode of the bar shaped extended in one direction, and is arranged on the direction vertical with the first electrode.
It addition, the second electrode 240 can be electrically connected to light emitting semiconductor device 250 by the connection electrode prominent from the second electrode 240. More specifically, connect the n-type electrode that electrode can be light emitting semiconductor device 250. Such as, this n-type electrode is formed by the Ohmic electrode for Ohmic contact, and the second electrode covers at least some of of Ohmic electrode by printing or depositing. By so, the second electrode 240 may be electrically connected to the n-type electrode of light emitting semiconductor device 250.
With reference to the accompanying drawings, the second electrode 240 may be located in conductive adhesive 230. According to circumstances, it is possible on the substrate 210 be formed with light emitting semiconductor device 250, form the transparent insulating layer (not shown) comprising Si oxide (SiOx). When forming transparent insulating layer and arranging the second electrode 240 thereon subsequently, the second electrode 240 may be located on transparent insulating layer. It addition, the second electrode 240 can be formed to separate with conductive adhesive 230 or transparent insulating layer.
If the second electrode 240 is arranged on light emitting semiconductor device 250 by the transparency electrode using such as indium tin oxide (ITO), then ITO material has the problem poor with the adhesiveness of n-type semiconductor. Therefore, the second electrode 240 can be disposed between light emitting semiconductor device 250, thus being obtained without need for the advantage of transparency electrode. Therefore, n-type semiconductor layer and the conductive material with good adhesion are used as horizontal electrode, limit without by the selection of transparent material, thus strengthening light extraction efficiency.
With reference to the accompanying drawings, spaced walls 290 can be formed between light emitting semiconductor device 250. In other words, spaced walls 290 can be arranged between vertical semiconductor luminescent device 250, to be isolated by the light emitting semiconductor device 250 being constituted each pixel. In this case, spaced walls 290 can perform the effect being separated from each other by each sub-pixel, and is formed as overall with conductive adhesive 230. Such as, when light emitting semiconductor device 250 is inserted in anisotropic conductive film, the substrate of anisotropic conductive film can form spaced walls.
It addition, when the substrate of anisotropic conductive film is black, when not having additional black insulator, spaced walls 290 can have reflection characteristic, increases contrast simultaneously.
For another example, it is possible to be separately provided reflection interval wall by spaced walls 290. In this case, the purpose according to display device, spaced walls 290 can include black or white insulator.
If the second electrode 240 is exactly in the conductive adhesive 230 between light emitting semiconductor device 250, then spaced walls 290 may be located between light emitting semiconductor device 250 and the second electrode 240. Therefore, can use light emitting semiconductor device 250 even with small size to configure each sub-pixel, and the distance between light emitting semiconductor device 250 can be relatively sufficiently large, so that the second electrode 240 is arranged between light emitting semiconductor device 250, thus having the effect realizing that there is the flexible display apparatus of HD picture quality.
It addition, with reference to the accompanying drawings, black matrix 291 can be arranged between each fluorescence coating with enhancing contrast ratio. In other words, the contrast that black matrix 191 can highlight.
As it has been described above, light emitting semiconductor device 250 is positioned in conductive adhesive 230, thus constituting each pixel on the display apparatus. Owing to light emitting semiconductor device 250 has the light characteristic of excellence, thus even configuring each sub-pixel with its small size. As a result, it is possible to achieve full-color EL display, wherein, the sub-pixel of red (R), green (G) and blue (B) realizes a pixel by light emitting semiconductor device.
According to the disclosure, in the display device using above-mentioned light emitting semiconductor device, it may be considered that be used for reducing the electrode connecting line structure of frame (bezel) size. Hereinafter, by this connecting wire structure of description.
Figure 10 illustrates the exploded view according to the connecting wire structure in the display device of the disclosure, and Figure 11 A is the plane graph illustrating the display device in Figure 10, and Figure 11 B and Figure 11 C is the sectional view intercepted of line A-A and the B-B along Figure 11 A respectively.
With reference to accompanying drawing, display device 300 can include circuit board 310, conductive adhesive 330 and light emitting semiconductor device 350 (following, only to illustrate conductive adhesive and light emitting semiconductor device in the sectional views).
First electrode 320 and the second electrode 340 are arranged on circuit board 310 place, and can include multiple layer. The plurality of layer can include first substrate layer 311 and second substrate layer 312, and is formed with the structure that second substrate layer 312 is arranged on the upper surface of first substrate layer 311.
With reference to the accompanying drawings, first substrate layer 311 can perform the effect with reference to the substrate 110 (referring to Fig. 3 A) in the display device described by Fig. 3 A and Fig. 3 B, and second substrate layer 312 can perform the function (referring to Fig. 3) of insulating barrier 160. Therefore, first substrate layer 311 and second substrate layer 312 can be formed by such as polyimides (PI), the insulation of PET, PEN etc. and flexible material respectively.
Conductive adhesive 330 is formed to cover circuit board 310. More specifically, conductive adhesive 330 is formed on a surface of second substrate layer 312. As it has been described above, conductive adhesive 330 can be have the layer of viscosity, electric conductivity and flexibility, thus providing flexibility function to display device. According to present embodiment, it is shown that conductive adhesive 330 is formed by anisotropic conductive film (ACF).
Light emitting semiconductor device 350 can be flip chip type luminescent device, and multiple light emitting semiconductor device is coupled to anisotropic conductive film, and is electrically connected to circuit board 310 and the second electrode 340.
Such as, first electrode 320 and the second electrode 340 can be arranged on direction intersected with each other, and flip chip type p-type electrode 156 (referring to Fig. 4) can pass through auxiliary electrode 370 and be connected to the first electrode 320, and n-type electrode 152 (referring to Fig. 4) may be connected to the second electrode 340. In this case, in configuration aspects, the first electrode 320 can be the vertical electrode that multiple electrode wires is set in vertical direction, and functionally, the first electrode 320 can be data electrode. It addition, in configuration aspects, the second electrode 340 can be the horizontal electrode that multiple electrode wires is arranged in horizontal direction (being perpendicular to the direction of the first electrode); And functionally, the second electrode 340 can be data electrode and gate electrode.
Referring again to the structure of circuit board 310, the first electrode 320 is arranged on first substrate layer 311 place. More specifically, the first electrode 320 is formed on a surface 311a of first substrate layer 311, and covered by second substrate layer 312. Second substrate layer 312 can include another surface 312b of a surface 312a towards conductive adhesive and covering the first electrode 320, and auxiliary electrode 370 and the second electrode 340 are arranged on a surface 312a of second substrate layer 312.
Auxiliary electrode 370 has a shape, and can be electrically connected to the first electrode 220 by the electrode hole 371 passed through through second substrate layer 312. Electrode hole 371 can be formed by filled conductive material in through-holes.
With reference to the accompanying drawings, the connecting line part 313 (or connecting line) for the first electrode 320 and the second electrode 340 are connected to the driver element (not shown) of multiple light emitting semiconductor device 350 is formed on a surface 311a of another surface 312b towards second substrate layer 312 of first substrate layer 311. Driver element can be drive semiconductor chip, and is installed on connector 361 with the form of chip on film (COF), and connecting line part 313 is connected to connector 361.
More specifically, connecting line part 313 can include the first connecting line 314 and the second connecting line 315.
First connecting line 314 extends along the length direction of the first electrode 320 from the first electrode 320. Therefore, the first connecting line 314 can be arranged in vertical direction. First connecting line 314 is extended to the join domain 316 of first substrate layer 311, and is connected to the connector 361 in join domain 316. Join domain 316 can be formed in first substrate layer 311 a end.
According to present embodiment, it is shown that the first connecting line 314 extends from the first electrode 320 in one direction, but the disclosure can be not necessarily limited to this. Such as, the first connecting line 314 can be formed in the two directions from the first electrode 320. For such example, the any portion of the first connecting line 314 all can extend to an end of first substrate layer 311 from multiple electrode wires, and another part of the first connecting line can extend to the other end of first substrate layer 311, this is its opposite direction. It addition, the connecting line part 313 extended in directions opposite each other can be set thereon successively.
Second connecting line 315 is electrically connected to the second electrode 340 via the through hole 341 of second substrate layer 312, and extends from the second electrode 340 on the direction that the length direction with the second electrode 340 intersects.
It is provided with multiple through hole 341, and these through holes can be formed by filled conductive material in through-holes. With reference to the accompanying drawings, the plurality of through hole can include being set to first group adjacent with the both sides of second substrate layer 312 and second group (342,343).
It addition, the second connecting line 315 can include the left line 315a and right line 315b that are separately positioned on the first connecting line 314 surrounding both sides place. Left line 315a and right line 315b is from first group and second group 342,343 join domains 316 extending to first substrate layer 311.
According to said structure, driver element can drive light emitting semiconductor device by join domain 316, connecting line part 313 and electrode, thus realizing flexible display, in this flexible display, red, green and blue subpixels forms a pixel.
It addition, according to the disclosure, it is proposed that the mechanism of frame size in display device can be reduced further. Hereinafter, this mechanism it is more fully described with reference to the accompanying drawings.
Figure 12 is the exploded view illustrating the structure according to the connecting line in the display device of the another embodiment of the disclosure, and Figure 13 A is the plane graph illustrating the display device in Figure 12, and Figure 13 B and Figure 13 C is the line A-A along Figure 13 A and the line B-B sectional view intercepted respectively.
Circuit board 410 can include first substrate layer 411, second substrate layer 412 and basal substrate 417. Therefore, circuit board 410 can be formed by 3-tier architecture, and exemplarily, second substrate layer 412 is deposited on a surface of first substrate layer 411, and basal substrate 417 is formed to cover another surface of first substrate layer 411.
Such as, first electrode 420 and the second electrode 440 can be arranged on direction intersected with each other, and flip chip type p-type electrode 156 (referring to Fig. 4) can pass through electrode hole 471 and auxiliary electrode 470 is connected to the first electrode 420, and n-type electrode 152 (referring to Fig. 4) may be coupled to the second electrode 440.
With reference to accompanying drawing, the connecting line part 413 for the first electrode 420 and the second electrode 440 are connected to the driver element (not shown) of multiple light emitting semiconductor device is formed on two surfaces of first substrate layer 411. First substrate layer 411 can be polyimides. Subsequently, according to the disclosure, it is possible to form line on two surfaces of polyimide-based panel area, thus the size of the frame reduced in display device.
Connecting line part 413 can include the first connecting line 414 and the second connecting line 415.
First connecting line 414 extends from the first electrode 420, and be arranged on first substrate layer 411 on a surface 411a of another surface 412b of second substrate layer 412. On the contrary, the second connecting line 415 is formed in the plane being different from the first connecting line 414. More specifically, the second connecting line 415 can be formed on another surface of first substrate layer 411 to be electrically connected to the second electrode 440.
First connecting line 414 and the second connecting line 415 are configured such that it overlaps each other at least partially in a thickness direction. First connecting line 414 and the second connecting line 415 can be arranged in Different Plane, thus allowing this overlapping configuration.
Such as, the first electrode 420 is the vertical electrode that multiple electrode is set in vertical direction, and the first connecting line 414 vertically extends from vertical electrode.
With reference to the accompanying drawings, through hole 441a, the 114b corresponded to each other is formed on first substrate layer 411 and second substrate layer 412 place, so that the second electrode 440 to be connected to second connecting line 415 overlapping with the first connecting line 414. Second connecting line 415 extends from through hole 441a, 114b towards the inside of the circuit board 410 being provided with the first connecting line 414.
With reference to the accompanying drawings, the through hole 441a of second substrate layer 412 can include being arranged to first group 442 adjacent with the both sides of second substrate layer 412 and second group 443, and while forming symmetrical shape from first group 442 and second group 443, the second connecting line 415 extends towards the inside of circuit board 410.
Considering a connecting line, the second connecting line 415 can include oblique part 415a and vertical component 415b. Oblique part 415a can be the part extended towards the inside of circuit board 410 from through hole 441a, and vertical component 415b can be attached to the part of oblique part 415a, and being similar to the mode of the bearing of trend of vertical electrode, this vertical component 415b extends in vertical direction.
With reference to the accompanying drawings, the first connecting line 414 and the second connecting line 415 extend to the join domain 416 of first substrate layer 411, and are connected to the connector 461 in join domain 416. Connector 461 can be formed on an end of first substrate layer 411.
But, the disclosure can be not necessarily limited to this structure, it is also possible to provides implementation below: wherein, any portion of the second connecting line 415 extends to a direction, and its another part extends to the direction in opposite direction with one. In other words, can also have a structure that wherein, join domain is formed respectively in two ends of circuit board 410, and a part for the second connecting line 415 extends to an end, and its another part extends to the other end, and it is connected respectively to multiple connector (not shown).
Referring again to accompanying drawing, basal substrate 417 is formed to cover the whole part of the second connecting line 415 on another surface being positioned at first substrate layer. Form the connection through hole 418 being used for that the second connecting line 415 is extended to a surface of first substrate layer 411 at first substrate layer 411 place, and the second connecting line 415 can pass through to connect through hole 418 and be connected to driver element in the plane identical with the first connecting line 414. By filled conductive material in through-holes, connect through hole 418 and allow a part for the second connecting line 415 being arranged on a surface of first substrate layer 411 to be electrically connected to a part for the second connecting line 415 being arranged on its another surface.
It addition, a part for the second connecting line 415 extended to a surface of first substrate layer 411 can along horizontal direction between the first connecting line 414. Such as, a part for the second connecting line 415 can be successively set on along horizontal direction on a surface of first substrate layer together with the first connecting line 414.
According to this structure, it is possible to reduce the width of the part of connecting line, thus realizing narrow frame. It addition, the display device with said structure may be modified as various forms and is implemented in a variety of forms. Hereinafter, embodiment it is more fully described with reference to the accompanying drawings.
Figure 14 is the sectional view illustrating the structure according to the connecting line in the display device of a further embodiment of the disclosure.
According to this example, circuit board 510 can be formed by 3-tier architecture, and exemplarily, second substrate layer 512 is deposited on a surface of first substrate layer 511, and basal substrate 517 is formed to cover another surface of first substrate layer 511.
Connecting line part 513 is formed on two surfaces of first substrate layer 511, and more specifically, first connecting line 514 extends from the first electrode 520, and be arranged on first substrate layer 511 on a surface 511a of another surface 512b of second substrate layer 512. On the contrary, the second connecting line 515 is formed in the plane being different from the first connecting line 514. More specifically, the second connecting line 515 can be formed on another surface 511b of first substrate layer 511 to be electrically connected to the second electrode 540.
With reference to the accompanying drawings, connector 561 for driver element is connected to the first connecting line 514 and the second connecting line 515 is formed to be covered each by two surfaces of first substrate layer 511, so that second connecting line 515 is connected to driver element in the plane being different from the first connecting line 514. In this case, basal substrate 517 is formed not cover at least some of of the second connecting line 515 on another surface being positioned at first substrate layer 511.
In this way, owing to forming join domain on two surfaces of first substrate layer 511, so connector 561 and connecting line part 513 can be connected to each other, without with reference to any connection through hole 418 (referring to Figure 13 C) in the embodiment described by Figure 12, Figure 13 A, Figure 13 B and Figure 13 C.
It is modified according to this example, the surrounding structure of the join domain in above-mentioned embodiment and the structure of connector and has been described, but this example can be not necessarily limited to this, and for example, it is possible to being applied to other embodiment of the disclosure in a similar fashion.
For another embodiment, Figure 15 is the exploded view illustrating the structure according to the connecting line in the display device of a further embodiment of the disclosure, and Figure 16 A is the plane graph illustrating the display device in Figure 15, and Figure 16 B and Figure 16 C is the line A-A along Figure 16 A and the line B-B sectional view intercepted respectively.
With reference to accompanying drawing, it is shown that have modified the structure of peripheral part of electrode hole 471 (referring to Figure 13 B) in reference to Figure 12, Figure 13 A, Figure 13 B and Figure 13 C embodiment described. Such as, connecting hole 672 rather than electrode hole are provided thereon, and connecting hole 672 is formed parallel with the second electrode 640 and intersects with the first electrode 620.
Auxiliary electrode 670 is any one in multiple auxiliary electrode, and multiple auxiliary electrode is arranged in single connecting hole 672. Such as, connecting hole 672 can be formed by a plurality of line being parallel to horizontal electrode (the second electrode). By as such, it is possible to form the passage for auxiliary electrode 670 being electrically connected to the first electrode 620 on circuit board 610. In this case, circuit board 610 can be formed by 3-tier architecture, and exemplarily, second substrate layer 612 is deposited on a surface of first substrate layer 611, and basal substrate 617 is formed to cover another surface of first substrate layer 611. The passage (that is, connecting hole 672) for auxiliary electrode 670 being electrically connected to the first electrode 620 can be formed guiding second substrate layer 612 place.
In the structure of Figure 12, Figure 13 A, Figure 13 B and Figure 13 C, electrode hole is configured to adjacent one another are so that manufacturing and degenerating, but connecting hole 672 is bar line, thus allowing simple manufacture. By as such, it is possible to have fine spaced lines structure.
First electrode 620 can be formed to be not connected to multiple parts, and to generate auxiliary electrode 670 in connecting hole 672, and the extra conductor 673 for being coated with can be arranged on the plurality of part place. It addition, the plurality of part can be connecting hole 672 and the second electrode 640 intersects the part at place. Conductor 673 can be formed over the plurality of portions by electroless plating. In other words, extra conductor 673 can be formed on the part place separated with wire, and by as such, it is possible to perform plating. In this case, auxiliary electrode 670 can pass through to electroplate to be formed on a surface of conductor 573.
Above-mentioned line structure is readily adaptable for use in vertical semiconductor luminescent device. Hereinafter, display device description realized with vertical semiconductor luminescent device.
Figure 17 is the exploded view illustrating the structure according to the connecting line in the display device of a further embodiment of the disclosure, and Figure 18 A is the plane graph illustrating the display device in Figure 12, and Figure 18 B and Figure 18 C is the line A-A along Figure 18 A and the line B-B sectional view intercepted respectively.
With reference to accompanying drawing, display device 700 can include circuit board 710, conductive adhesive 730 and light emitting semiconductor device 750.
Circuit board 710 can include basal layer 711 and substrate layer 712. Circuit board 710 can be with reference to Fig. 8 substrate 210 (referring to Fig. 8) being provided with the first electrode described.
Controller 711 and memorizer 712 are formed by insulation and the flexible material of such as polyimides (PI), to realize flexible display apparatus. First electrode 720 is arranged on substrate layer 712 place, and basal layer 711 is formed to cover the first electrode 720.
Conductive adhesive 730 is formed on the substrate layer 712 being provided with the first electrode 720. Conductive adhesive 730 can be anisotropic conductive film (ACF), anisotropic conductive paste, the solution etc. that comprises conductive particle, but below, exemplified with the situation being realized conductive adhesive 730 by anisotropic conductive film.
Light emitting semiconductor device 750 can have vertical stratification, and is coupled to conductive adhesive 730. It is arranged on the direction intersected with the length direction of the first electrode 720 and is electrically connected to multiple second electrodes 740 of light emitting semiconductor device 750 between light emitting semiconductor device. In this case, the second electrode 740 is arranged on conductive adhesive 730 place.
Such as, the first electrode 720 and the second electrode 740 can be arranged on direction intersected with each other, and the p-type electrode 756 with vertical stratification may be connected to the first electrode 720, and n-type electrode 752 may be connected to the second electrode 740. In this case, as described in the embodiment, the first electrode 720 can be vertical electrode, and the second electrode 740 can be horizontal electrode. Therefore, horizontal electrode is formed on the upper surface of conductive adhesive 730, and light emitting semiconductor device 750 is arranged on below.
With reference to the accompanying drawings, forming connecting line part 713 at substrate layer 712 place, this connecting line part 713 for being connected to the driver element of multiple light emitting semiconductor device by the first electrode 720 and the second electrode 740.
Connecting line part 713 can include the first connecting line 714 and the second connecting line 715.
First connecting line 714 be arranged on substrate layer 712 on a surface of conductive adhesive 730, and extend along the length direction of the first electrode 720 from the first electrode. Therefore, the first connecting line 714 can be arranged in vertical direction. First connecting line 714 extends to the join domain 716 of substrate layer 712, and is connected to the connector 761 in join domain 716. Join domain 716 can be formed on an end of substrate layer 712.
Second connecting line 715 is formed on another surface of substrate layer 712, and is electrically connected to the second electrode 740 being arranged on conductive adhesive 730 place. Through hole 741a is formed, so that the second connecting line 715 is connected to the second electrode 740 at conductive adhesive 730 place. It addition, also form the through hole 741b corresponding with through hole 741a at substrate layer 712 place. Through hole 741a, 741b are formed by filled conductive material in through-holes.
The upper surface of conductive adhesive 730 is electrically connected to the lower surface of substrate layer 712 via through hole 741a, 741b, but can also use other method. For example, it is possible to install conductive welding disk on the through hole 741b of substrate layer 712, and when applying heat and pressure to conductive adhesive 730, conductive welding disk may be electrically connected to the end of the second electrode 740. According to said structure, the second electrode 740 may be electrically connected to the second connecting line 715, without the through hole forming conductive adhesive 730.
Referring again to accompanying drawing, the second connecting line 715 extends from through hole 741a, 741b towards the inside of the circuit board 710 being provided with the first connecting line 714. By so, can overlapping on the thickness direction of circuit board at least partially of the first connecting line 714 and the second connecting line 715, but can be arranged in plane different from each other.
The ad hoc structure of the connecting line part on two surfaces of substrate layer 712 is can apply to reference to Figure 12, Figure 13 A, Figure 13 B and Figure 13 C said structure of embodiment described. In this way, according to the disclosure, even if in the display device of application vertical semiconductor luminescent device, it is also possible to reduce the size of frame.
Arrangements and methods according to above-mentioned embodiment will not be applied to use the above-mentioned display device of light emitting semiconductor device with ways to restrain, and all or part of each embodiment can optionally combine and be configured to it is carried out various amendment.

Claims (20)

1. a display device, this display device includes:
Circuit board, described circuit board has first substrate layer and second substrate layer;
Conductive adhesive, described conductive adhesive is configured to cover described circuit board; And
Multiple light emitting semiconductor devices, the plurality of light emitting semiconductor device is coupled to described conductive adhesive, and is electrically connected to the first electrode and the second electrode,
Wherein, described first electrode is arranged on described first substrate layer place, and
Described second substrate layer includes another surface of a surface towards described conductive adhesive and described first electrode of covering, and
Described second electrode and the auxiliary electrode electrically connected with described first electrode are arranged on a surface of described second substrate layer.
2. display device according to claim 1, wherein, the connecting line part for described first electrode and described second electrode are connected to the driver element of the plurality of light emitting semiconductor device is formed on a surface towards another surface described in described second substrate layer of described first substrate layer.
3. display device according to claim 2, wherein, described connecting line part includes:
First connecting line, described first connecting line extends along the length direction of described first electrode from described first electrode; And
Second connecting line, described second connecting line is electrically connected to described second electrode via the through hole on described first substrate layer, and upwardly extends in the side that the length direction with described second electrode intersects.
4. display device according to claim 3, wherein, the left line at the both sides place that described second connecting line includes being separately positioned on around described first connecting line and right line.
5. display device according to claim 1, wherein, the connecting line part for described first electrode and described second electrode are connected to the driver element of the plurality of light emitting semiconductor device is formed on two surfaces of described first substrate layer.
6. display device according to claim 5, wherein, described connecting line part includes:
First connecting line, described first connecting line be arranged on described first substrate layer on a surface on another surface described in described second substrate layer; And
Second connecting line, described second connecting line is formed on another surface of described first substrate layer to be electrically connected to described second electrode.
7. display device according to claim 6, wherein, the thickness direction being provided in described circuit board at least partially of described first connecting line and described second connecting line overlaps each other.
8. display device according to claim 7, wherein, the through hole corresponded to each other is formed on described first substrate layer and described second substrate layer so that described second electrode to be electrically connected at least some of with what described first connecting line overlapped of described second connecting line.
9. display device according to claim 6, wherein, the connection through hole for described second connecting line extends to a surface of described first substrate layer is formed on described first substrate layer, and
Described second connecting line is connected to described driver element via described connection through hole in the plane identical with the plane of described first connecting line.
10. display device according to claim 6, wherein, connector for described driver element is connected to described first connecting line and described second connecting line is formed to cover two surfaces of described first substrate layer, in order to by described second connecting line with the different plane of described first connecting line on be connected to described driver element.
11. display device according to claim 6, wherein, any portion of described second connecting line extends in one direction, and another part of described second connecting line upwardly extends in the side in opposite direction with one.
12. display device according to claim 6, wherein, described circuit board also includes basal substrate, and described basal substrate covers another surface described of described first substrate layer.
13. display device according to claim 1, wherein, it is arranged on described second substrate layer place, to form the passage for described auxiliary electrode being electrically connected to described first electrode with described second electrode runs parallel and with the connecting hole of described first electrode crossing.
14. display device according to claim 13, wherein, described auxiliary electrode is any one in multiple auxiliary electrode, and the plurality of auxiliary electrode is arranged in single connecting hole.
15. display device according to claim 13, wherein, described first electrode is formed to disconnect with multiple parts, and the extra conductor for being coated with is arranged on the plurality of part place.
16. display device according to claim 15, wherein, described conductor is formed on the plurality of part place by electroless plating.
17. display device according to claim 16, wherein, described auxiliary electrode is formed on a surface of described conductor by electroplating.
18. a display device, this display device includes:
Circuit board, described circuit board has basal layer and substrate layer;
Conductive adhesive, described conductive adhesive is configured to cover described substrate layer; And
Multiple light emitting semiconductor devices, the plurality of light emitting semiconductor device is coupled to described conductive adhesive, and is electrically connected to the first electrode and the second electrode,
Wherein, described first electrode is arranged on described substrate layer place, and described second electrode is arranged on described conductive adhesive place, and
For the connecting line part that described first electrode and described second electrode are connected with the driver element of the plurality of light emitting semiconductor device is formed on described substrate layer place.
19. display device according to claim 18, wherein, described connecting line part includes:
First connecting line, described first connecting line be arranged on described substrate layer on a surface of described conductive adhesive, and from described first electrode extend; And
Second connecting line, described second connecting line is formed on another surface of described substrate layer, and is electrically connected to described second electrode.
20. display device according to claim 19, wherein, the through hole for described second electrode is electrically connected to described second connecting line is formed on described conductive adhesive.
CN201480058629.XA 2013-10-24 2014-03-26 Use the display device of light emitting semiconductor device Expired - Fee Related CN105684069B (en)

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EP3061081B1 (en) 2021-03-17

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