CN105679859A - High-gain X ray detector based on double-heterojunction HEMT - Google Patents
High-gain X ray detector based on double-heterojunction HEMT Download PDFInfo
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- CN105679859A CN105679859A CN201610248271.8A CN201610248271A CN105679859A CN 105679859 A CN105679859 A CN 105679859A CN 201610248271 A CN201610248271 A CN 201610248271A CN 105679859 A CN105679859 A CN 105679859A
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- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 37
- 230000004888 barrier function Effects 0.000 claims abstract description 10
- 238000002161 passivation Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000009825 accumulation Methods 0.000 claims abstract description 5
- 238000005036 potential barrier Methods 0.000 claims description 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 5
- 238000011084 recovery Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 10
- 230000004044 response Effects 0.000 abstract description 6
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 5
- 230000005855 radiation Effects 0.000 abstract description 3
- 229910007277 Si3 N4 Inorganic materials 0.000 abstract 1
- 230000010287 polarization Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000007850 degeneration Effects 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005516 deep trap Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
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- Condensed Matter Physics & Semiconductors (AREA)
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- Inorganic Chemistry (AREA)
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Abstract
The invention discloses a high-gain X ray detector based on a double-heterojunction HEMT. The high-gain X ray detector comprises an AlGaN barrier layer, a GaN channel layer, an AlGaN back barrier buffer layer, a substrate, a Si3 N4 passivation layer, a grid electrode, a source electrode and a drain electrode. Cavity accumulation in the irradiation process happens to the interface between the channel layer and the back barrier buffer layer in the detector structure, so that the barrier height is lowered, the electron current of a channel changes, and finally an extremely high current gain is generated. The X ray detector is based on a GaN-based material system, the ionising radiation resistance is high, and the current gain is extremely high, so that the defect that the absorption rate of the GaN material to X rays is low is overcome, and the problem that the response time of a conventional GaN schottky X ray detector is solved.
Description
Technical field
The present invention relates to X-ray detector, be specifically related to a kind of high current gain X-ray detector based on AlGaN/GaN/AlGaN double heterojunction HEMT.
Background technology
X-ray dose detector plays an important role at numerous areas such as space exploration, nuclear facilities monitoring, roentgenotherapia and biomedicines, and type photodetector mainly has geiger's tube, thermoluminescent detector (TLD), scintillator detector and semiconductor detector. Along with scientific and technological progress, semiconductor detector demonstrates huge DEVELOPMENT PROSPECT and value by the technical advantage that volume is little, cost is low, highly sensitive.
Traditional X-ray semiconductor detector is mainly based upon silicon materials. High-energy ray Long-Duration Exposure can produce lattice defect in silicon materials, defect becomes the complex centre of the indirect compound of electron hole pair at the energy level of forbidden band intermediate formation, this, by increasing the clean generation rate in electron hole of space-charge region, ultimately results in the degeneration of device performance, including the increase of dark current. In order to reinforce semiconductor device, reduce the radiation degeneration to detector performance, conventional method has: detector is carried out pre-irradiation, because the defect density that irradiation introduces is limited, pre-irradiation makes up to saturated, just can ignore the device performance degeneration that irradiation causes in follow-up radiation detection; Select the wide-band gap materials such as diamond, SiC and GaN.
GaN material energy gap is big, and dark current is little, it is possible to effectively shielding near infrared ray and visible ray, and has the ability of excellent anti-high-energy ray irradiation, and these features make GaN material be sent to great expectations in X-ray detection X field. AlGaN and GaN has very strong spontaneous polarization effect, and AlGaN spontaneous polarization is better than GaN. Owing to AlGaN lattice paprmeter is less than GaN, AlGaN layer Tensile stress effect, produce piezoelectric polarization effect. Combined effect in piezoelectricity and spontaneous polarization effect exists, and need not any adulterate, it is possible to produce surface density 10 at AlGaN/GaN heterojunction boundary place12-13cm-2Polarity be positive fixed polarization electric charge, thus in interface aggregates one floor height concentration (1018-19Cm-3) electronics, is called two-dimensional electron gas (2-DEG). Owing in 2-DEG raceway groove, electron concentration is high, and do not adulterate the foreign ion introduced, thus electronics mobility in 2-DEG raceway groove is high, saturated velocity is high, electric current density is big, here it is based on the fundamental characteristics of AlGaN/GaN hetero-junctions HEMT (HighElectronMobilityTransistor, HEMT) device.
Owing to GaN film is on the low side to sigmatron absorption efficiency, simultaneously to limit the detector time corresponding for the displacement defect in material and deep trap energy level. Current GaN detector correlational study is concentrated mainly on the ultraviolet detector based on AlGaN/GaNHEMT and the low energy X ray detector based on GaN Schottky diode, and the X-ray detector based on GaN material is restricted in actual applications.
Summary of the invention
For GaN film material, X-ray absorption efficiency is low, and the problem that the time is slow accordingly, the present invention proposes a kind of x-ray dose detector based on AlGaN/GaN/AlGaN double heterojunction HEMT.
Technical scheme is as follows:
A kind of high-gain X-ray detector based on double heterojunction HEMT, carries on the back potential barrier cushion, substrate, Si including AlGaN potential barrier, GaN channel layer, AlGaN3N4Passivation layer, grid, source electrode and drain electrode; It is provided with Si between described source electrode and drain electrode3N4Passivation layer; Grid, between source electrode and drain electrode, is arranged on Si3N4In the groove of passivation layer; Si3N4AlGaN potential barrier, GaN channel layer, AlGaN back of the body potential barrier cushion and substrate it is sequentially provided with below passivation layer; AlGaN potential barrier/GaN channel layer/AlGaN carries on the back the double heterojunction that potential barrier cushion is formed.
Described AlGaN potential barrier, the AlN component containing AlN composition gradual change, bottom and GaN channel layer contact surface is 0%.
Described AlGaN carries on the back potential barrier cushion, and back of the body barrier height reduces with hole accumulation in irradiation process, fast quick-recovery after irradiated.
The beneficial effects of the present invention is: X-ray detector of the present invention has high current gain, compensate for GaN material to the inefficient problem of X-ray absorption, time corresponding problem can be eliminated simultaneously.
Accompanying drawing explanation
Fig. 1 is the structural representation of double heterojunction HEMT detector disclosed by the invention;
Fig. 2 is the flow schematic diagram producing electron hole in detector irradiation process of the present invention;
Fig. 3 is drain electrode response current in detector irradiation process of the present invention;
Fig. 4 is detector irradiation current-responsive of the present invention and incident photon density relationship curve.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the present invention is specifically addressed.
X-ray detector of the present invention, based on AlGaN/GaN/AlGaN double heterojunction HEMT, as shown in Figure 1, for panel detector structure schematic diagram, comprising: AlGaN potential barrier (1), GaN channel layer (2), AlGaN carries on the back potential barrier cushion (3), substrate (4), Si3N4Passivation layer (5), and grid (6), source electrode (7) and drain electrode (8).
Device architecture channel length shown in Fig. 11 micron, wide 1 micron, the equal non-impurity-doped of each layer. Described AlGaN potential barrier (1) is containing AlN composition gradual change, and barrier layer top AlN component is 30%, and bottom and GaN channel layer (2) contact surface AlN component are 0%, and barrier layer thickness is 20 nanometers; GaN channel layer (2) thickness 30 nanometers; It is 10% containing AlN component that AlGaN carries on the back potential barrier cushion (3), thickness 500 nanometers; Grid (6) is Schottky contacts, and source electrode (7) and drain electrode (8) are Ohmic contact.
In x-ray irradiation process, in the middle of device grids, longitudinal band of energy along the line is as shown in Figure 2, due to AlGaN potential barrier AlN content gradually variational, the two-dimensional electron gas (2-DEG) that the electron channel of formation is formed from AlGaN/GaN interface in tradition HEMT is different, covers whole AlGaN potential barrier. Electron hole pair drift motion under electric field action that irradiation produces, electronics flows to electron channel, finally flows out from device drain, and hole is in the accumulation of back of the body potential barrier interface.Along with the accumulation in hole, back of the body barrier height declines, and the electronic current size in electron channel is produced impact, namely changes device output current.
Incident x-ray photons for energy 22keV, absorbed efficiency is about 5%, namely ray energy 1.1keV is absorbed, the energy gap of GaN is 3.39eV, its ionization energy is estimated with the 3 of energy gap times, namely often ionization produces pair of electrons hole is 3.39 × 3 ≈ 10eV to needs energy, and then each incident x-ray photons can produce 1100/10=110 to electron hole pair. Per second 5 × 105It is 8 × 10 that the electronics that individual photon incidence produces all flows out, from drain electrode, the leakage current formed-12A. If Fig. 3 is detector drain electrode response current in irradiation process, namely under irradiation, size of current deducts size of current during without irradiation, it is seen that the rdaiation response current amplitude being carried on the back barrier height change generation by electron channel is 43uA, and current gain reaches 5 × 106, compensate for material to the inefficient problem of X-ray absorption. Response current rising edge of a pulse is steep simultaneously, the problem being absent from intrinsic time response.
Detector irradiation current-responsive of the present invention is with incident photon density relationship curve as shown in Figure 4.
The foregoing is only presently preferred embodiments of the present invention, all equalizations done according to the claims in the present invention scope change and modify, and all should belong to the covering scope of the claims in the present invention.
Claims (3)
1. the high-gain X-ray detector based on double heterojunction HEMT, it is characterised in that: include AlGaN potential barrier (1), GaN channel layer (2), AlGaN back of the body potential barrier cushion (3), substrate (4), Si3N4Passivation layer (5) and grid (6), source electrode (7) and drain electrode (8); It is provided with Si between described source electrode (7) and drain electrode (8)3N4Passivation layer (5), source electrode (7) and drain electrode (8) are Ohmic contact; Grid (6) is positioned between source electrode (7) and drain electrode (8), is arranged on Si3N4In the groove of passivation layer (5); Si3N4Passivation layer (5) lower section is sequentially provided with AlGaN potential barrier (1), GaN channel layer (2), AlGaN back of the body potential barrier cushion (3) and substrate (4); AlGaN potential barrier/GaN channel layer/AlGaN carries on the back the double heterojunction that potential barrier cushion is formed.
2. according to the claim 1 one kind high-gain X-ray detector based on double heterojunction HEMT, it is characterised in that: described AlGaN potential barrier, containing AlN composition gradual change, the AlN component of bottom and GaN channel layer contact surface is 0%.
3. according to the claim 1 one kind high-gain X-ray detector based on double heterojunction HEMT, it is characterised in that: described AlGaN carries on the back potential barrier cushion, and back of the body barrier height reduces with hole accumulation in irradiation process, quick-recovery soon after irradiated.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109301027A (en) * | 2018-08-20 | 2019-02-01 | 西安电子科技大学 | Radiation detector and preparation method thereof based on nonpolar InAlN/GaN heterojunction structure |
| CN110970511A (en) * | 2019-12-29 | 2020-04-07 | 中国科学院西安光学精密机械研究所 | All-solid-state photon enhanced thermionic emission photoelectric conversion device with nano spacer layer |
| CN111969047A (en) * | 2020-08-27 | 2020-11-20 | 电子科技大学 | Gallium nitride heterojunction field effect transistor with composite back barrier layer |
| CN113419270A (en) * | 2021-06-23 | 2021-09-21 | 中国工程物理研究院激光聚变研究中心 | Online filter stack spectrometer |
| EP4143610A4 (en) * | 2020-05-01 | 2024-05-15 | Nat Res Council Canada | Radiation-hard, temperature tolerant, gan hemt devices for radiation sensing applications |
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| CN103035706A (en) * | 2013-01-04 | 2013-04-10 | 电子科技大学 | Vertical gallium nitride based nitride heterojunction field effect transistor with polarized doped current barrier layer |
| CN104704637A (en) * | 2012-04-16 | 2015-06-10 | Hrl实验室有限责任公司 | Device with graded barrier layer |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109301027A (en) * | 2018-08-20 | 2019-02-01 | 西安电子科技大学 | Radiation detector and preparation method thereof based on nonpolar InAlN/GaN heterojunction structure |
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| CN110970511A (en) * | 2019-12-29 | 2020-04-07 | 中国科学院西安光学精密机械研究所 | All-solid-state photon enhanced thermionic emission photoelectric conversion device with nano spacer layer |
| CN110970511B (en) * | 2019-12-29 | 2024-05-31 | 中国科学院西安光学精密机械研究所 | All-solid-state photon enhanced thermionic emission photoelectric conversion device with nanometer spacing layer |
| EP4143610A4 (en) * | 2020-05-01 | 2024-05-15 | Nat Res Council Canada | Radiation-hard, temperature tolerant, gan hemt devices for radiation sensing applications |
| CN111969047A (en) * | 2020-08-27 | 2020-11-20 | 电子科技大学 | Gallium nitride heterojunction field effect transistor with composite back barrier layer |
| CN111969047B (en) * | 2020-08-27 | 2022-05-24 | 电子科技大学 | Gallium nitride heterojunction field effect transistor with composite back barrier layer |
| CN113419270A (en) * | 2021-06-23 | 2021-09-21 | 中国工程物理研究院激光聚变研究中心 | Online filter stack spectrometer |
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