CN105679859B - A kind of high-gain X-ray detector based on double heterojunction HEMT - Google Patents
A kind of high-gain X-ray detector based on double heterojunction HEMT Download PDFInfo
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- CN105679859B CN105679859B CN201610248271.8A CN201610248271A CN105679859B CN 105679859 B CN105679859 B CN 105679859B CN 201610248271 A CN201610248271 A CN 201610248271A CN 105679859 B CN105679859 B CN 105679859B
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- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 38
- 238000005036 potential barrier Methods 0.000 claims abstract description 25
- 238000002161 passivation Methods 0.000 claims abstract description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 9
- 230000004888 barrier function Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 6
- 230000008569 process Effects 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000009825 accumulation Methods 0.000 claims abstract description 5
- 230000008859 change Effects 0.000 claims abstract description 5
- 238000011084 recovery Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 12
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 5
- 230000004044 response Effects 0.000 abstract description 5
- 239000000872 buffer Substances 0.000 abstract 1
- 230000005865 ionizing radiation Effects 0.000 abstract 1
- 230000010287 polarization Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000007850 degeneration Effects 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005250 beta ray Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005516 deep trap Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000002560 therapeutic procedure Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The present invention discloses a kind of high-gain X-ray detector based on double heterojunction HEMT.Including AlGaN potential barrier, GaN channel layers, AlGaN back of the body potential barriers cushion, substrate, Si3N4 passivation layers, grid, source electrode and drain electrode；Channel layer in panel detector structure buffers bed boundary in irradiation process because of hole accumulation with back of the body potential barrier, causes barrier height to reduce, causes channel electrons curent change, finally produces high current gain.X-ray detector of the present invention is based on GaN base material system, with strong ionizing radiation-resistant ability, simultaneously there is very high currents gain, compensate for the defects of GaN material is low to X-ray absorption efficiency, and eliminate traditional GaN Schottky X-ray detector response time it is long the problem of.
Description
Technical field
The present invention relates to X-ray detector, and in particular to one kind is moved based on the high electronics of AlGaN/GaN/AlGaN double heterojunctions
The high current gain X-ray detector of shifting rate transistor.
Background technology
X-ray dose detector plays in numerous areas such as space exploration, nuclear facilities monitoring, beta ray therapy and biomedicines
Important function, type photodetector mainly has geiger's tube, thermoluminescent detector (TLD), scintillator detector and semiconductor probe
Device.With scientific and technological progress, semiconductor detector is by small volume, cost is low, high sensitivity technical advantage show it is huge
DEVELOPMENT PROSPECT and value.
Traditional X-ray semiconductor detector is mainly based upon silicon materials.High-energy ray Long-Duration Exposure can be in silicon materials
Middle generation lattice defect, the energy level that defect is formed among forbidden band turn into the indirect compound complex centre of electron hole pair, and this will
Increase the net generation rate in electron hole of space-charge region, ultimately result in the degeneration of device performance, include the increase of dark current.In order to
Semiconductor devices is reinforced, reduces degeneration of the radiation to detector performance, conventional method has：Pre- spoke is carried out to detector
According to because the defects of irradiation introduces concentration is limited, pre-irradiation makes up to saturation, the can in follow-up radiation detection
Device performance degeneration caused by ignoring irradiation；From wide-band gap materials such as diamond, SiC and GaN.
GaN material energy gap is big, and dark current is small, can effectively shield near infrared ray and visible ray, and with excellent
The ability of good anti-high-energy ray irradiation, these features cause GaN material to be sent to great expectations in X-ray detection X field.AlGaN and
GaN has very strong spontaneous polarization effect, and AlGaN spontaneous polarizations are better than GaN.Because AlGaN lattice constants are less than GaN,
AlGaN layer Tensile stress, produce piezoelectric polarization effect.Exist in the collective effect of piezoelectricity and spontaneous polarization effect,
Without any doping, it is possible to produce surface density 10 at AlGaN/GaN heterojunction boundaries12-13cm-2Polarity be positive fixation
Polarization charge, thus in the floor height concentration (10 of interface aggregates one18-19Cm-3 electronics), referred to as two-dimensional electron gas (2-DEG).Due to
Electron concentration is high in 2-DEG raceway grooves, and without the foreign ion for adulterating introducing, thus electronics mobility in 2-DEG raceway grooves
Height, saturated velocity is high, and current density is big, and here it is based on AlGaN/GaN hetero-junctions HEMTs (High
Electron Mobility Transistor, HEMT) device fundamental characteristics.
Because GaN film is relatively low to sigmatron absorption efficiency, while displacement defect and deep trap energy level limit in material
It is corresponding the detector time has been made.The correlative study of GaN detectors is concentrated mainly on the ultraviolet based on AlGaN/GaN HEMT at present
Detector and the low energy X ray detector based on GaN Schottky diode, actually should based on the X-ray detector of GaN material
It is restricted in.
The content of the invention
The problem of low to X-ray absorption efficiency for GaN film material, and the time is accordingly slow, the present invention propose a kind of
X-ray dose detector based on AlGaN/GaN/AlGaN double heterojunctions HEMT.
Technical scheme is as follows：
A kind of high-gain X-ray detector based on double heterojunction HEMT, including AlGaN potential barrier, GaN channel layers,
AlGaN back of the body potential barriers cushion, substrate, Si3N4Passivation layer, grid, source electrode and drain electrode；It is provided between described source electrode and drain electrode
Si3N4Passivation layer；Grid is located between source electrode and drain electrode, is arranged on Si3N4In the groove of passivation layer；Si3N4Below passivation layer according to
It is secondary to be provided with AlGaN potential barrier, GaN channel layers, AlGaN back of the body potential barrier cushions and substrate；AlGaN potential barrier/GaN channel layers/
The double heterojunction that AlGaN back of the body potential barrier cushions are formed.
The AlGaN potential barrier, the gradual change of composition containing AlN, bottom and the AlN components of GaN channel layer contact surfaces are
0%.
The AlGaN carries on the back potential barrier cushion, and back of the body barrier height reduces with hole accumulation in irradiation process, quick after irradiated
Recover.
The beneficial effects of the present invention are：X-ray detector of the present invention has high current gain, compensate for GaN materials
Material it is low to X-ray absorption efficiency the problem of, while can eliminate the time it is corresponding the problem of.
Brief description of the drawings
Fig. 1 is the structural representation of double heterojunction HEMT detector disclosed by the invention；
Fig. 2 is the flow schematic diagram that electron hole is produced in detector irradiation process of the present invention；
Fig. 3 is the response current that drained in detector irradiation process of the present invention；
Fig. 4 is that detector of the present invention irradiates current-responsive and incident photon density relationship curve.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is carried out below in conjunction with accompanying drawing specific
Illustrate.
X-ray detector of the present invention, based on AlGaN/GaN/AlGaN double heterojunction HEMT, as shown in figure 1, being detector
Structural representation, comprising：AlGaN potential barrier (1), GaN channel layers (2), AlGaN back of the body potential barrier cushions (3), substrate (4), Si3N4
Passivation layer (5), and grid (6), source electrode (7) and drain electrode (8).
1 micron of device architecture channel length shown in Fig. 1, wide 1 micron, each equal non-impurity-doped of layer.The AlGaN potential barrier (1)
The gradual change of composition containing AlN, barrier layer top AlN components are 30%, and bottom is with GaN channel layers (2) contact surface AlN components
0%, barrier layer thickness is 20 nanometers；30 nanometers of GaN channel layers (2) thickness；AlGaN carries on the back potential barrier cushion (3) component containing AlN
10%, 500 nanometers of thickness；Grid (6) is Schottky contacts, and source electrode (7) and drain electrode (8) are Ohmic contact.
, can be with as shown in Fig. 2 due to AlGaN potential barrier AlN along longitudinal direction among device grids during x-ray irradiation
Content gradually variational, the electron channel of formation is different from the two-dimensional electron gas (2-DEG) that AlGaN/GaN interfaces in traditional HEMT are formed,
Cover whole AlGaN potential barrier.The drift motion under electric field action of electron hole pair caused by irradiation, electronics flow to electronics ditch
Road, finally flowed out from device drain, and hole is in the accumulation of back of the body potential barrier interface.With the accumulation in hole, back of the body barrier height declines, right
Electronic current size in electron channel has an impact, that is, changes device output current.
For energy 22keV incident x-ray photons, material absorption efficiency is about 5%, that is, absorbs ray energy
1.1keV, GaN energy gap are 3.39eV, estimate its ionization energy with 3 times of energy gap, i.e., often ionization produces pair of electrons
Hole is 3.39 × 3 ≈ 10eV to needing energy, and then each incident x-ray photons can produce 1100/10=110 to electronics
Hole pair.Per second 5 × 105The leakage current that electronics caused by individual photon incidence is all formed from drain electrode outflow is 8 × 10- 12A.If Fig. 3 is that detector drains response current in irradiation process, that is, irradiates lower size of current and subtract size of current during without irradiation,
It can be seen that the rdaiation response current amplitude as caused by electron channel back of the body barrier height change is 43uA, current gain reaches 5 × 106,
It compensate for the problem of material is low to X-ray absorption efficiency.Response current rising edge of a pulse is steep simultaneously, is rung in the absence of the intrinsic time
The problem of answering.
Detector irradiation current-responsive of the present invention and incident photon density relationship curve are as shown in Figure 4.
The foregoing is only presently preferred embodiments of the present invention, all equivalent changes done according to scope of the invention as claimed with
Modification, it should all belong to the covering scope of the claims in the present invention.
Claims (2)
- A kind of 1. high-gain X-ray detector based on double heterojunction HEMT, it is characterised in that：Including AlGaN potential barrier (1), GaN channel layers (2), AlGaN back of the body potential barrier cushions (3), substrate (4), Si3N4Passivation layer (5) and grid (6), source electrode (7) and Drain (8)；Si is provided between described source electrode (7) and drain electrode (8)3N4Passivation layer (5), source electrode (7) and drain electrode (8) connect for ohm Touch；Grid (6) is located between source electrode (7) and drain electrode (8), is arranged on Si3N4In the groove of passivation layer (5)；Si3N4Passivation layer (5) Lower section is sequentially provided with AlGaN potential barrier (1), GaN channel layers (2), AlGaN back of the body potential barrier cushions (3) and substrate (4)；AlGaN gesture The double heterojunction that barrier layer/GaN channel layers/AlGaN back of the body potential barrier cushions are formed；The AlGaN potential barrier, composition containing AlN The AlN components of gradual change, bottom and GaN channel layer contact surfaces are 0%.
- 2. according to a kind of high-gain X-ray detector based on double heterojunction HEMT of claim 1, it is characterised in that：It is described AlGaN carries on the back potential barrier cushion, and back of the body barrier height reduces with hole accumulation in irradiation process, irradiated rear fast quick-recovery.
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| CN109301027B (en) * | 2018-08-20 | 2020-09-15 | 西安电子科技大学 | Radiation detector based on nonpolar InAlN/GaN heterostructure and preparation method thereof |
| CN110970511B (en) * | 2019-12-29 | 2024-05-31 | 中国科学院西安光学精密机械研究所 | All-solid-state photon enhanced thermionic emission photoelectric conversion device with nanometer spacing layer |
| US20230178644A1 (en) * | 2020-05-01 | 2023-06-08 | National Research Council Of Canada | Radiation-hard, temperature tolerant, gan hemt devices for radiation sensing applications |
| CN111969047B (en) * | 2020-08-27 | 2022-05-24 | 电子科技大学 | Gallium nitride heterojunction field effect transistor with composite back barrier layer |
| CN113419270B (en) * | 2021-06-23 | 2022-08-30 | 中国工程物理研究院激光聚变研究中心 | Online filter stack spectrometer |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1260827C (en) * | 2000-02-04 | 2006-06-21 | 美商克立股份有限公司 | Group III nitride based fets and hemts with reduced trapping and method for producing the same |
| CN101916773A (en) * | 2010-07-23 | 2010-12-15 | 中国科学院上海技术物理研究所 | Double-channel MOS-HEMT (Metal Oxide Semiconductor-High Electron Mobility Transistor) device and manufacturing method |
| CN102969341A (en) * | 2012-11-09 | 2013-03-13 | 中国电子科技集团公司第五十五研究所 | Nitride high electronic mobility transistor extension structure of component gradually-changed ALyGal-yN buffer layer |
| CN103035706A (en) * | 2013-01-04 | 2013-04-10 | 电子科技大学 | Vertical gallium nitride based nitride heterojunction field effect transistor with polarized doped current barrier layer |
| CN104704637A (en) * | 2012-04-16 | 2015-06-10 | Hrl实验室有限责任公司 | Device with graded barrier layer |
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- 2016-04-20 CN CN201610248271.8A patent/CN105679859B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1260827C (en) * | 2000-02-04 | 2006-06-21 | 美商克立股份有限公司 | Group III nitride based fets and hemts with reduced trapping and method for producing the same |
| CN101916773A (en) * | 2010-07-23 | 2010-12-15 | 中国科学院上海技术物理研究所 | Double-channel MOS-HEMT (Metal Oxide Semiconductor-High Electron Mobility Transistor) device and manufacturing method |
| CN104704637A (en) * | 2012-04-16 | 2015-06-10 | Hrl实验室有限责任公司 | Device with graded barrier layer |
| CN102969341A (en) * | 2012-11-09 | 2013-03-13 | 中国电子科技集团公司第五十五研究所 | Nitride high electronic mobility transistor extension structure of component gradually-changed ALyGal-yN buffer layer |
| CN103035706A (en) * | 2013-01-04 | 2013-04-10 | 电子科技大学 | Vertical gallium nitride based nitride heterojunction field effect transistor with polarized doped current barrier layer |
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