CN105679738B - Chip rectifier cell and its production technology - Google Patents
Chip rectifier cell and its production technology Download PDFInfo
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- CN105679738B CN105679738B CN201610178768.7A CN201610178768A CN105679738B CN 105679738 B CN105679738 B CN 105679738B CN 201610178768 A CN201610178768 A CN 201610178768A CN 105679738 B CN105679738 B CN 105679738B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000005516 engineering process Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000605 extraction Methods 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- 239000011888 foil Substances 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000001746 injection moulding Methods 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000003854 Surface Print Methods 0.000 claims description 2
- 238000004070 electrodeposition Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 description 5
- 238000000465 moulding Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000005323 electroforming Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4825—Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4828—Etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/4952—Additional leads the additional leads being a bump or a wire
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Rectifiers (AREA)
Abstract
Present invention discloses a kind of chip rectifier cell and its production technologies, rectifier cell includes, housing module, including the upper layer insulation-encapsulated body, middle layer insulation-encapsulated body and substrate being cascading up and down, middle layer insulation-encapsulated body includes four first through hole, the upper and lower surface of each first through hole perforation middle layer insulation-encapsulated body；The circuit module being embedded in housing module, including, chip module, including four chip diode chips being set between substrate and middle layer insulation-encapsulated body, chip includes the upper surface electrode of end face disposed thereon；Wire module group, it is electrically connected with chip module into bridge rectifier, wire module group includes the second conducting wire, privates and four second electrodes being set between upper layer insulation-encapsulated body and middle layer insulation-encapsulated body, second conducting wire is set in first through hole and makes upper surface electrode and second electrode to be electrically connected, and privates is set between upper layer insulation-encapsulated body and middle layer insulation-encapsulated body and is electrically connected second electrode.
Description
Technical field
The present invention relates to a kind of chip rectifier cell and its production technologies, belong to surface chip Element Technology field.
Background technique
Bridge rectifier is usually used in rectification circuit field, and basic functional principle is to realize that electric current will be all using diode
The reversed alternating current of phase property is converted to unidirectional direct current, which, which is referred to as, rectifies.On the other hand, existing bridge-type
Rectification circuit is typically integrated in the circuit design of certain product.
Current existing rectifier cell is typically provided with conductive metal frames, and draws aluminum conductor from lead frame and draw as element
Foot, disadvantage is as follows: volume is larger, thickness is thicker, in the smaller and smaller situation of volume requirement of the modern society to electronic product
Under, existing rectifier cell has less adapted to the integrated small size requirement of hyundai electronics；The complexity of route inside this class component
Degree and production complexity form contradiction, can not achieve complicated circuitous pattern；Furthermore for the product of different series, bridge
Formula rectification circuit is needed through existing identical bridge rectifier come design iterations, currently without independent general bridge-type
Rectification circuit module, increases design complexities.
In view of this, it is necessary to which existing rectifier cell is improved to solve the above problems.
Summary of the invention
Be at least to solve one of above-mentioned technical problem, the purpose of the present invention is to provide it is a kind of it is small in size, thickness is thin, cost
Low chip rectifier cell and its production technology, can also be achieved and not need design iterations bridge rectifier and layout, and shortening is set
Count the period.
One of for achieving the above object, an embodiment of the present invention provides a kind of chip rectifier cell, described whole
Fluid element includes,
Housing module, including the upper layer insulation-encapsulated body, middle layer insulation-encapsulated body and substrate being cascading up and down, institute
Stating middle layer insulation-encapsulated body includes four first through hole, and each first through hole penetrates through the upper and lower of the middle layer insulation-encapsulated body
Surface；
The circuit module being embedded in the housing module, including,
Chip module, including four chip diode cores being set between the substrate and the middle layer insulation-encapsulated body
Piece, the chip include the upper surface electrode of end face disposed thereon；
Wire module group is electrically connected with the chip module into bridge rectifier, and the wire module group is led including second
Line, privates and four second electrodes being set between the upper layer insulation-encapsulated body and the middle layer insulation-encapsulated body,
Second conducting wire is arranged in the first through hole and makes the upper surface electrode and the second electrode to be electrically connected, described
Privates is set between the upper layer insulation-encapsulated body and the middle layer insulation-encapsulated body and is electrically connected second electricity
Pole.
As the further improvement of an embodiment of the present invention, the chip includes the lower surface electricity positioned at its lower end surface
Pole, the wire module group further include taking shape in four first electrodes of the upper surface of base plate, four first electrodes and four
A chip corresponds respectively and is electrically connected at the corresponding lower surface electrode.
As the further improvement of an embodiment of the present invention, in the vertical direction, any corresponding first electricity
The least partially overlapped setting of pole, the second electrode and the chip.
As the further improvement of an embodiment of the present invention, the wire module group further includes taking shape in table on the substrate
First conducting wire in face, first conducting wire are electrically connected the first electrode by the bridge rectifier.
As the further improvement of an embodiment of the present invention, the housing module include be set to its side-walls and inwardly
Four the second grooves of recess, second groove extend along the vertical direction and at least penetrate through table on the middle layer insulation-encapsulated body
Face and the base lower surface, the wire module group includes the privates being set in second groove, and the third is led
Line, first conducting wire are electrically connected the privates respectively at second groove.
As the further improvement of an embodiment of the present invention, the second electrode and the privates are set as passing through
Etching technics takes shape in the conductive metal foil of the middle layer insulation-encapsulated body upper surface.
As the further improvement of an embodiment of the present invention, the wire module group further includes four extraction electrodes, described
Extraction electrode is set as sheet and is attached at the lower surface of the substrate.
As the further improvement of an embodiment of the present invention, the middle layer insulation-encapsulated body includes being located at its lower surface
First groove, the chip is placed in first groove so that the middle layer insulation-encapsulated body is coated on the outer of the chip
Side and top.
As the further improvement of an embodiment of the present invention, each first through hole includes the multiple logical of cluster row's setting
Hole unit is respectively arranged with second conducting wire in each through-hole unit.
One of for achieving the above object, an embodiment of the present invention additionally provides a kind of chip rectification member as described above
The production technology of part, the production technology comprising steps of
According to bridge rectifier, in base lower surface, upper surface print respectively formed extraction electrode, first electrode and with
First conducting wire of the first electrode electrical connection；
The lower surface electrode of chip diode chip is welded respectively and is connected in the first electrode；
Injection molding between the conductive metal foil above the chip, which is fixed in, in the substrate and frame forms middle layer insulation-encapsulated body；
The conductive metal foil is formed by second electrode corresponding with the chip and privates using etch process；
The first through hole for penetrating through the middle layer insulation-encapsulated body is formed at the second electrode position, and in described first
The second conducting wire of setting in through-hole is so that the chip upper surface electrode and the second electrode are electrically connected；
Using Shooting Technique in formation upper layer insulation-encapsulated body on the middle layer insulation-encapsulated body；
The second groove extended along the vertical direction is formed on less than the middle layer insulation-encapsulated body and the substrate, makes institute
It states the first conducting wire, the privates and the extraction electrode and is exposed to second groove, and in second groove
Privates are set, and the privates are electrically connected first conducting wire, the privates and the extraction electrode；
It is cut to the chip rectifier cell.
Compared with prior art, the present invention has following advantageous effects: passing through setting substrate and topping wire generation
For conventional wires frame structure, chip rectifier bridge component size is reduced, the smaller and smaller requirement of existing electronic device volume is met；
Make to be able to achieve inside element by topping wire and possess more complicated circuitous pattern, solves the lance of circuitous pattern and production difficulty
Shield, so that module can possess more complicated circuitous pattern under the premise of not increasing original outer dimension, that is to say, that this structure
The lightening of electronic product can further be promoted.
Detailed description of the invention
Fig. 1 is the schematic perspective view of the chip rectifier cell of an embodiment of the present invention；
Fig. 2 is the decomposition overlooking structure diagram of the chip rectifier cell of an embodiment of the present invention；
Fig. 3 is the decomposition present invention looks up structural representation of the chip rectifier cell of an embodiment of the present invention；
Fig. 4 is the layering schematic cross-sectional view of the chip rectifier cell of an embodiment of the present invention；
Fig. 5 is the production technological process of the chip rectifier cell of another embodiment of the present invention.
Specific embodiment
Below with reference to specific embodiment shown in the drawings, the present invention will be described in detail.But these embodiments are simultaneously
The present invention is not limited, structure that those skilled in the art are made according to these embodiments, method or functionally
Transformation is included within the scope of protection of the present invention.
It is to be appreciated that unless otherwise clearly defined and limited, in the description of the present invention, term " center " " is indulged
To ", " transverse direction ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside" etc.
The orientation or positional relationship of instruction is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of the description present invention and letter
Change description, rather than the device or element of indication or suggestion meaning must have a particular orientation, with specific orientation construct and
Operation, therefore be not considered as limiting the invention.In addition, term " first ", " second " etc. are used for description purposes only, without
It can be interpreted as indication or suggestion relative importance.
Below with reference to the accompanying drawings chip rectifier cell according to an embodiment of the invention described.
Referring to Fig. 1 to Fig. 4, the chip rectifier cell 100 of an embodiment of the present invention, including housing module and circuit mould
Block.
The housing module is set as insulating materials and is used to support and protects the circuit module.Specifically, the shell
Module includes the upper layer insulation-encapsulated body 11, middle layer insulation-encapsulated body 12 and substrate 13 being cascading up and down, it is described on
Layer insulation-encapsulated body 11, middle layer insulation-encapsulated body 12 and substrate 13 are all made of isolation material.
The substrate 13 includes the base lower surface 132 and upper surface of base plate 131 being oppositely arranged, and the substrate 13 can be used as
Supporter is to lay circuit pattern on its surface.
The circuit module is embedded in the housing module, including chip module 21 and wire module group, the chip dies
Group 21 and the wire module group are electrically connected and form bridge rectifier.
Specifically, the chip module 21 is set between the substrate 13 and the middle layer insulation-encapsulated body 12, including
Four chip diode chips 210, each chip 210 include the upper surface electrode 2101 of end face disposed thereon and are located at it
The lower surface electrode 2102 of lower end surface, each chip 210 can pass through the upper surface electrode 2101 and lower surface electricity
Pole 2102 is connected into circuit, and is acted on using its own individual event conducting, is DC current by the AC conversion for exchanging end input
Output.
The wire module group include extraction electrode 2210, first electrode 2211, second electrode 2212, the first conducting wire 2221,
Second conducting wire 2222, privates 2223 and privates 2224.It is worth noting that each first conducting wire 2221,
Two conducting wires 2222, privates 2223, privates 2224 can respectively include one or more snippets conductive structure composition.
The extraction electrode 2210 is set as four, and four extraction electrodes 2210 form the rectifier cell 100
Four ports, for the rectifier cell 100 to be electrically connected with external conductive route, wherein four extraction electrodes
It should include two AC input mouths and two DC output end mouths in 2210.Each extraction electrode 2210 is by conduction
Material is constituted, and is set as square sheet and is attached at the base lower surface 132, certainly, can also according to the actual situation or
The shape to the extraction electrode 2210 is needed to be modified accordingly.By setting sheet simultaneously for the extraction electrode 2210
It is attached at the base lower surface 132, substitutes component pin in the prior art, pin easy fracture is avoided, perishable asks
Topic, ensure that the structural stability of rectifier cell, extends the service life of collating elements.
The first electrode 2211 takes shape in table on the substrate by manufacturing process for printed circuit board using conductive material
On face 131.The first electrode 2211 is set as four square-shaped electrodes, and four first electrodes 2211 are respectively and described in four
Chip 210 correspond, and four first electrodes 2211 respectively with the lower surface electrode of the corresponding chip 210
2102 are electrically connected.The wire module group includes the solder 31 coated on 2211 upper surface of first electrode, the solder 31
For by four first electrodes 2211, welded connecting corresponding with the corresponding lower surface electrode 2102 electrically to be led respectively
It is logical.
Similar with the first electrode 2211, first conducting wire 2221 can also be used conductive material and pass through printed circuit
Plate manufacture craft takes shape on the upper surface of base plate 131.First conducting wire 2221 is for being electrically connected the first electrode
2211 and preset circuitous pattern is formed by the bridge rectifier.The first electrode 2211 and first conducting wire 2221
It is formed by manufacturing process for printed circuit board, not only facilitates the layout diversification improved to circuitous pattern in this way, but also can subtract
Its small occupied space reduces component size.
The middle layer insulation-encapsulated body 12 is covered in the upper surface of base plate 131 and coats the chip module 21
Come, at least form protective effect to the chip module 21 and the first electrode 2211.In process of production, in described
Layer insulation-encapsulated body 12 can be by the insulation-encapsulated glue of liquid by injection molding curing molding, and the middle layer insulation-encapsulated body 12 includes into
In the first groove 121 of its lower surface, the chip module 21 is placed in first groove 121 so that the middle layer is exhausted type
Edge packaging body 12 is coated on 21 outside of chip module and top.In one embodiment, first groove 121 can also hold
First conducting wire 2221 and the first electrode 2211 are set, to 2211 shape of first conducting wire 2221 and the first electrode
At protection.
The second electrode 2212 is set between the upper layer insulation-encapsulated body 11 and the middle layer insulation-encapsulated body 12,
The second electrode 2212 is set as four square-shaped electrodes and corresponds respectively with four chips 210.Of course, it is possible to root
It modifies according to actual conditions and needs to the circuit patterns of the second electrode 2212.
In an embodiment of the present invention, in the vertical direction, described in corresponding four second electrodes 2212, four
First electrode 2211 and four least partially overlapped settings of the chip 210, that is, the second electrode 2212, described first
Electrode 2211 is respectively arranged at surface, the underface of the corresponding chip 210.In this way, conducting wire complexity can be being reduced
While, reduce component size.
Second conducting wire 2222 is used to make the second electrode 2212 and the upper surface of the corresponding chip 210 electricity
Pole 2101 is electrically connected.Specifically, the middle layer insulation-encapsulated body 12 includes at least four first through hole 122, each described the
One through-hole 122 penetrates through the upper and lower surface of the middle layer insulation-encapsulated body 12, and it is logical that second conducting wire 2222 is set to described first
In hole 122.In an embodiment of the present invention, the first through hole 122 is set at 2212 position of second electrode and passes through
The second electrode 2212, that is, in the vertical direction, the first through hole 122 is located at the second electrode 2212 and/or institute
In the drop shadow spread for stating chip 210, the wiring complexity of second conducting wire 2222 can be reduced in this way.In addition, in the present invention one
In embodiment, second conducting wire 2222 is the conductive metal for being at least plated on 122 inner wall of first through hole.
Preferably, in an embodiment of the present invention, each first through hole 122 includes multiple through-holes of cluster row's setting
Unit and each through-hole unit is provided with second conducting wire 2222 can guarantee the second electrode 2212 and right in this way
Answer the upper surface electrode 2101 that can effectively be electrically connected, to guarantee product yield.In figure embodiment, each described first
Through-hole 122 is set as four through-hole units, correspondingly, each second electrode 2212 of connection and the corresponding upper surface
Second conducting wire 2222 of electrode 2101 is also four.
The privates 2223 is set between the upper layer insulation-encapsulated body 11 and the middle layer insulation-encapsulated body 12,
And be set as being formed in 12 upper surface of middle layer insulation-encapsulated body by etching technics using conductive metal foil, for electrically connecting
It connects the second electrode 2212 and forms preset circuitous pattern by the bridge rectifier.It in practical applications, can basis
Need arbitrarily to be arranged the circuitous pattern of the privates 2223.Conventional wires frame is replaced by the way that the privates 2223 is arranged
Structure makes chip rectifier cell volume-diminished, meets the smaller and smaller requirement of existing electronic device volume；And pass through described the
Three wires 2223, which can make to be able to achieve inside element, possesses more complicated circuitous pattern, solves the lance of circuitous pattern and production difficulty
Shield, so that element can possess more complicated circuitous pattern under the premise of not increasing original outer dimension, that is to say, that this structure
The lightening of electronic product can further be promoted.
During manufacturing, the second electrode 2212 and the privates 2223 can be by being set up in the chip
The conductive metal foil of 21 top of mould group is molded curing molding process by the middle layer insulation-encapsulated body 12 and the middle layer is insulated
Packaging body 12 combines, and is integrally formed by printed circuit board circuitry etch process.
The privates 2224 are for being electrically connected the privates 2223, first conducting wire 2221 and described drawing
Electrode 2210 out.Specifically, the housing module includes four the second grooves 14 for being set to its side-walls and being recessed inwardly, institute
The second groove 14 is stated to extend along the vertical direction and at least penetrate through 12 upper surface of middle layer insulation-encapsulated body and the substrate following table
Face 132.In an embodiment of the present invention, second groove 14 penetrates through the housing module, namely the perforation upper layer is exhausted
11 upper surface of edge packaging body and the base lower surface 132.Second groove 14 is set as, the privates 2223, institute
Stating the first conducting wire 2221 and the extraction electrode 2210 can be exposed at second groove 14.The privates 2224 are set
It is placed in second groove 14, it is preferable that the privates 2224 are set as electroforming in second groove 14
Conductive metal on wall, in this way, the privates 2223, first conducting wire 2221 and the extraction electrode 2210 can be in
It is electrically connected at second groove 14 with the privates 2224.
In addition, the upper layer insulation-encapsulated body 11 is set on the middle layer insulation-encapsulated body 12 and makes the second electrode
2212, the privates 2223, second conducting wire 2222 are shielded under the upper layer insulation-encapsulated body 11, to described
Two electrodes 2212, the privates 2223, second conducting wire 2222 shield.
It is worth noting that embodiment of the present invention is not limited by figure embodiment and specification, circuitous pattern, conducting wire
Structure etc. can need to make change according to actual circuit.
In addition, bridge rectifier according to the present invention, the component encapsulation of standard or the PCB envelope of standard can be made in it
Dress.When needing the product for different series using a bridge rectifier, component encapsulation or standard the PCB encapsulation of standard can
Directly to use, it is not required to design iterations bridge rectifier and layout.In other words, the design cycle can shorten.And this hair
The bridge rectifier of a bright embodiment can be relative to element individual packages and independent test, to realize guarantee and improvement
The quality of product.
In addition, in an embodiment of the present invention, the present invention also provides a kind of chip rectifier cells 100 referring to Fig. 5
Production technology, the structure of rectifier cell 100 in conjunction with shown in Fig. 1 to Fig. 4 is illustrated the production technology, the production
Technique comprising steps of
According to bridge rectifier, in 13 lower surface 132 of substrate, upper surface 131 print respectively formed extraction electrode 2210,
First electrode 2211 and the first conducting wire 2221 being electrically connected with the first electrode 2211；
The lower surface electrode 2102 of chip diode chip 210 is welded respectively and is connected in the first electrode 2211；Specifically
, coated with solder 13 in Yu Suoshu first electrode 2211, and by welding by four first electrodes 2211 respectively with four
The lower surface electrode 2102, which corresponds, to be electrically connected；
Conductive metal foil frame is fixed in 210 top of chip, is infused between the substrate 13 and the conductive metal foil
Moulding is at middle layer insulation-encapsulated body 12；The insulation-encapsulated glue of liquid is by injection molding curing molding at the middle layer insulation-encapsulated body 12
Afterwards, the shape of 12 lower surface of middle layer insulation-encapsulated body can be adapted to the chip 210, first conducting wire 2221 etc.,
Meanwhile the middle layer insulation-encapsulated body 12 can coat the chip 210, to be protected to it；
In 12 forming process of middle layer insulation-encapsulated body, the conductive metal foil and the middle layer insulation-encapsulated body 12
In conjunction with using etch process by the conductive metal foil by bridge rectifier formation and the chip 210 corresponding second
Electrode 2212 and privates 2223；The privates 2223 can arbitrarily lay circuitous pattern as needed；In this way, not only may be used
Design difficulty is reduced, but also component size can be reduced；
Four first through hole for penetrating through the middle layer insulation-encapsulated body 12 are formed at 2212 position of second electrode
122, and in the second conducting wire 2222 is arranged in the first through hole 122, second conducting wire 2222 makes the upper table of the chip 210
Face electrode 2101 and the second electrode 2212 are electrically connected, and in an embodiment of the present invention, second conducting wire 2222 is set
Electroforming is set in the conductive metal of 122 inner wall of first through hole；
Using Shooting Technique in formation upper layer insulation-encapsulated body 11 on the middle layer insulation-encapsulated body 12；
Four second extended along the vertical direction are formed on less than the middle layer insulation-encapsulated body 12 and the substrate 13
Groove 14, first conducting wire 2221, the privates 2223 and the extraction electrode 2210 are exposed to second groove
At 14, and in privates 2224 are arranged in second groove 14, the privates 2224 are electrically connected described first and lead
Line 2221, the privates 2223 and the extraction electrode 2210, the privates 2224 are set as electroforming in institute
State the conductive metal of 14 inner wall of the second groove；
It is longitudinally cutting, and form the chip rectifier cell 100.
It is described to repeat to set by above-mentioned steps using fixed length as unit on a larger substrate in an embodiment of the present invention
It sets, it can be achieved that multiple chip rectifier cells 100 while manufacturing.
Compared with prior art, the present invention has following advantageous effects: passing through setting substrate and topping wire generation
For conventional wires frame structure, chip rectifier bridge component size is reduced, the smaller and smaller requirement of existing electronic device volume is met；
Make to be able to achieve inside element by topping wire and possess more complicated circuitous pattern, solves the lance of circuitous pattern and production difficulty
Shield, so that module can possess more complicated circuitous pattern under the premise of not increasing original outer dimension, that is to say, that this structure
The lightening of electronic product can further be promoted.
Illustrating only for feasible embodiment of the invention is described in detail in those listed above, they are simultaneously
It is non-to limit the scope of the invention, it is all without departing from equivalent implementations made by technical spirit of the present invention or change should all
It is included within protection scope of the present invention.
Claims (4)
1. a kind of production technology of chip rectifier cell, which is characterized in that the production technology comprising steps of
According to bridge rectifier, in base lower surface, upper surface print respectively formed extraction electrode, first electrode and with it is described
First conducting wire of first electrode electrical connection；
The lower surface electrode of chip diode chip is welded respectively and is connected in the first electrode；
Injection molding between the conductive metal foil above the chip, which is fixed in, in the substrate and frame forms middle layer insulation-encapsulated body；
The conductive metal foil is formed by second electrode corresponding with the chip and privates using etch process；
The first through hole for penetrating through the middle layer insulation-encapsulated body is formed at the second electrode position, and in the first through hole
The second conducting wire of interior setting is so that the chip upper surface electrode and the second electrode are electrically connected；
Using Shooting Technique in formation upper layer insulation-encapsulated body on the middle layer insulation-encapsulated body；
To less than the second groove extended along the vertical direction is formed on the middle layer insulation-encapsulated body and the substrate, making described the
One conducting wire, the privates and the extraction electrode are exposed to second groove, and are arranged in second groove
Privates, the privates are electrically connected first conducting wire, the privates and the extraction electrode；
It is cut to the chip rectifier cell.
2. the production technology of chip rectifier cell according to claim 1, which is characterized in that the first electrode and described
The number of chip is four, and four first electrodes are corresponded respectively and are electrically connected at corresponding with four chips
The lower surface electrode.
3. the production technology of chip rectifier cell according to claim 2, which is characterized in that in the vertical direction, arbitrarily
The least partially overlapped setting of the corresponding first electrode, the second electrode and the chip.
4. a kind of chip rectifier cell, which is characterized in that the chip rectifier cell is using described in any one of claims 1 to 3
Production technology be made.
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| US11901113B2 (en) | 2019-01-07 | 2024-02-13 | Delta Electronics (Shanghai) Co., Ltd. | Inversely coupled inductor and power supply module |
| US11316438B2 (en) | 2019-01-07 | 2022-04-26 | Delta Eletronics (Shanghai) Co., Ltd. | Power supply module and manufacture method for same |
| CN111415909B (en) | 2019-01-07 | 2022-08-05 | 台达电子企业管理（上海）有限公司 | Multi-chip packaged power module |
| CN111415908B (en) | 2019-01-07 | 2022-02-22 | 台达电子企业管理（上海）有限公司 | Power module, chip embedded type packaging module and preparation method |
| CN111415925B (en) * | 2019-01-07 | 2023-01-24 | 台达电子企业管理（上海）有限公司 | Power module and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1848308A (en) * | 2005-03-28 | 2006-10-18 | 泰科电子有限公司 | Surface mount multi-layer electrical circuit protection device with active element between pptc layers |
| CN101552262A (en) * | 2008-03-31 | 2009-10-07 | 黄一峰 | Polycrystalline packaging unit and manufacture method thereof |
| CN102201395A (en) * | 2010-03-25 | 2011-09-28 | 方伟光 | Multi-layer semiconductor module packaging structure with anti-surge function and manufacturing method thereof |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI244186B (en) * | 2005-03-02 | 2005-11-21 | Advanced Semiconductor Eng | Semiconductor package and method for manufacturing the same |
| KR100650191B1 (en) * | 2005-05-31 | 2006-11-27 | 삼성전기주식회사 | High brightness led with protective function of electrostatic discharge damage |
| CN100505196C (en) * | 2005-11-25 | 2009-06-24 | 全懋精密科技股份有限公司 | Chip electric connection structure and its manufacturing method |
| US8878360B2 (en) * | 2012-07-13 | 2014-11-04 | Intel Mobile Communications GmbH | Stacked fan-out semiconductor chip |
| TWI500135B (en) * | 2012-12-10 | 2015-09-11 | Ind Tech Res Inst | Stacked type power device module |
| CN104112732A (en) * | 2013-08-19 | 2014-10-22 | 广东美的集团芜湖制冷设备有限公司 | Integrated circuit module and manufacturing method thereof |
| US9443815B2 (en) * | 2014-02-21 | 2016-09-13 | Maxim Integrated Products, Inc. | Embedded die redistribution layers for active device |
| CN205508810U (en) * | 2016-03-24 | 2016-08-24 | 禾邦电子（中国）有限公司 | Piece formula rectifier element |
-
2016
- 2016-03-24 CN CN201610178768.7A patent/CN105679738B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1848308A (en) * | 2005-03-28 | 2006-10-18 | 泰科电子有限公司 | Surface mount multi-layer electrical circuit protection device with active element between pptc layers |
| CN101552262A (en) * | 2008-03-31 | 2009-10-07 | 黄一峰 | Polycrystalline packaging unit and manufacture method thereof |
| CN102201395A (en) * | 2010-03-25 | 2011-09-28 | 方伟光 | Multi-layer semiconductor module packaging structure with anti-surge function and manufacturing method thereof |
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