CN105679405A - 含无铅玻璃料的导电浆 - Google Patents
含无铅玻璃料的导电浆 Download PDFInfo
- Publication number
- CN105679405A CN105679405A CN201510831380.8A CN201510831380A CN105679405A CN 105679405 A CN105679405 A CN 105679405A CN 201510831380 A CN201510831380 A CN 201510831380A CN 105679405 A CN105679405 A CN 105679405A
- Authority
- CN
- China
- Prior art keywords
- oxide
- conductive paste
- weight
- lead
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 title claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 24
- 229910000416 bismuth oxide Inorganic materials 0.000 claims abstract description 19
- 229940036359 bismuth oxide Drugs 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 28
- 238000000576 coating method Methods 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 13
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 claims description 12
- 239000007787 solid Substances 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 11
- 229910052714 tellurium Inorganic materials 0.000 claims description 11
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- QXYJCZRRLLQGCR-UHFFFAOYSA-N dioxomolybdenum Chemical compound O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 claims description 8
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 8
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 8
- -1 tin anhydride Chemical class 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000011575 calcium Substances 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 6
- 239000011572 manganese Substances 0.000 claims description 6
- 239000010955 niobium Substances 0.000 claims description 6
- 239000011669 selenium Substances 0.000 claims description 6
- 229910000108 silver(I,III) oxide Inorganic materials 0.000 claims description 6
- 239000011734 sodium Substances 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000006185 dispersion Substances 0.000 claims description 5
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000000395 magnesium oxide Substances 0.000 claims description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 5
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 5
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 4
- 239000013538 functional additive Substances 0.000 claims description 4
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 4
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 229960001866 silicon dioxide Drugs 0.000 claims description 4
- 239000013008 thixotropic agent Substances 0.000 claims description 4
- 239000000080 wetting agent Substances 0.000 claims description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052691 Erbium Inorganic materials 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052772 Samarium Inorganic materials 0.000 claims description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 239000011591 potassium Substances 0.000 claims description 3
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 3
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- FZFYOUJTOSBFPQ-UHFFFAOYSA-M dipotassium;hydroxide Chemical compound [OH-].[K+].[K+] FZFYOUJTOSBFPQ-UHFFFAOYSA-M 0.000 claims description 2
- ZXGIFJXRQHZCGJ-UHFFFAOYSA-N erbium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Er+3].[Er+3] ZXGIFJXRQHZCGJ-UHFFFAOYSA-N 0.000 claims description 2
- 229940119177 germanium dioxide Drugs 0.000 claims description 2
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims description 2
- 229910001947 lithium oxide Inorganic materials 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium oxide Inorganic materials [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052701 rubidium Inorganic materials 0.000 claims description 2
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 2
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 238000001764 infiltration Methods 0.000 description 11
- 230000008595 infiltration Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 239000005308 flint glass Substances 0.000 description 8
- 238000010422 painting Methods 0.000 description 7
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 5
- 239000001856 Ethyl cellulose Substances 0.000 description 5
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 5
- 235000019325 ethyl cellulose Nutrition 0.000 description 5
- 229920001249 ethyl cellulose Polymers 0.000 description 5
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229920002678 cellulose Polymers 0.000 description 3
- 235000010980 cellulose Nutrition 0.000 description 3
- 239000005331 crown glasses (windows) Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000009766 low-temperature sintering Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910003069 TeO2 Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- YADSGOSSYOOKMP-UHFFFAOYSA-N lead dioxide Inorganic materials O=[Pb]=O YADSGOSSYOOKMP-UHFFFAOYSA-N 0.000 description 2
- XMFOQHDPRMAJNU-UHFFFAOYSA-N lead(ii,iv) oxide Chemical compound O1[Pb]O[Pb]11O[Pb]O1 XMFOQHDPRMAJNU-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- HXDLWJWIAHWIKI-UHFFFAOYSA-N 2-hydroxyethyl acetate Chemical compound CC(=O)OCCO HXDLWJWIAHWIKI-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 description 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000010946 fine silver Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000001863 hydroxypropyl cellulose Substances 0.000 description 1
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 235000011837 pasties Nutrition 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- FJOLTQXXWSRAIX-UHFFFAOYSA-K silver phosphate Chemical compound [Ag+].[Ag+].[Ag+].[O-]P([O-])([O-])=O FJOLTQXXWSRAIX-UHFFFAOYSA-K 0.000 description 1
- 229910000161 silver phosphate Inorganic materials 0.000 description 1
- KZJPVUDYAMEDRM-UHFFFAOYSA-M silver;2,2,2-trifluoroacetate Chemical compound [Ag+].[O-]C(=O)C(F)(F)F KZJPVUDYAMEDRM-UHFFFAOYSA-M 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/24—Electrically-conducting paints
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/12—Silica-free oxide glass compositions
- C03C3/122—Silica-free oxide glass compositions containing oxides of As, Sb, Bi, Mo, W, V, Te as glass formers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/12—Silica-free oxide glass compositions
- C03C3/125—Silica-free oxide glass compositions containing aluminium as glass former
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/12—Silica-free oxide glass compositions
- C03C3/16—Silica-free oxide glass compositions containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/14—Compositions for glass with special properties for electro-conductive glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Physics & Mathematics (AREA)
- Dispersion Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Wood Science & Technology (AREA)
- Inorganic Chemistry (AREA)
- Conductive Materials (AREA)
- Photovoltaic Devices (AREA)
- Glass Compositions (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
本申请公开了一种导电浆,其特征在于,包含导电金属或其衍生物,以及分散在有机载体中的无铅玻璃料,所述无铅玻璃料包含碲-铋-氧化物。本申请的导电浆可用于形成太阳能电池电极,并且具有优异的能源转换效率。
Description
技术领域
本申请属于导电浆领域,具体地说,涉及一种包含导电金属、无铅玻璃料和有机载体的导电浆,以及一种应用导电浆的制品。
背景技术
现有的太阳能电池或光电池包含半导体基底、扩散层、抗反射涂层、背面电极以及正面电极,其中,使用抗反射涂层是为了促进光的吸收,进而提高光电效率。抗反射涂层通常包含硅(例如:一氮化硅或二氧化硅)。然而,抗反射涂层使得从半导体基底至正面电极间的电阻增加,产生减弱激发态电子流动的绝缘作用。
因此,在形成正面电极时,通常使用混合包含导电金属或其衍生物(例如:银粒子)、玻璃(例如:包含氧化铅)、有机载体等而制成的导电浆,因为玻璃具有低熔点、低熔融黏度及防止非控制性失透的稳定性。藉由网版印刷、刻板印刷等方式,在半导体基底上将导电浆印刷为栅线或其他图案,之后进行烧渗(fire-through),导电浆于烧结期间穿透该抗反射涂层,使半导体基底与栅线或其他图案间,透过金属触点而电性接触,进而形成正面电极。
为了达成合适的烧渗,较佳地使用对于抗反射涂层具有良好溶解度的玻璃,作为导电浆中的玻璃料。已知用于形成正面电极的导电浆中,玻璃料经常含有氧化铅的玻璃,因为易于调整玻璃的软化点,可提供良好的基底黏着性,可轻易地烧渗的可焊性及制备性能优异的太阳能电池等特性。
近年来大幅提升的环境意识,汽车、电子和太阳能电池等工业上,希望使用对环境友好的无铅材料。但在烧结后,具备穿透该抗反射涂层并与该半导体基底形成良好黏着的能力,以及具备优异的太阳能电池转换效率,又取决于该导电浆的组成,以及经烧渗的所述导电浆与所述半导体基底间电性接触的品质。
因此,提供一种可于低温烧结的含无铅玻璃料的导电浆,其具备前述的已知含铅材料的特性,实为业界所期盼。
发明内容
有鉴于此,本申请所要解决的技术问题是含无铅玻璃料的导电浆,在烧结后与基底黏着性不足,以及能源转换效率不佳的问题
为了解决上述技术问题,本申请一方面提供一种导电浆,包含:(a)导电金属或其衍生物,占固体重量的约85至约99.5重量%;(b)包含碲-铋-氧化物的无铅玻璃料,占固体重量约0.5至约15重量%;以及(c)有机载体;所述的固体重量系指(a)导电金属及(b)无铅玻璃料的总重量。
在本申请的较佳实施例中,导电金属或其衍生物包含银粉。
在本申请的较佳实施例为无铅玻璃料中,氧化碲与氧化铋的比例分别为约55至约90重量%及约10至约45重量%。本申请的另一较佳实施例为无铅玻璃料中,氧化碲与氧化铋的比例分别为约63至约82重量%及约18至约37重量%。本申请的再一较佳实施例为所述无铅玻璃料中,氧化碲与氧化铋的比例分别为约70至约75重量%及约25至约30重量%。
载体是包含聚合物与溶剂的溶液。
在本申请的进一步较佳实施例中,所述无铅玻璃料包含一种或多种下列组成的群组的元素或其氧化物:磷(P)、钡(Ba)、钠(Na)、镁(Mg)、锌(Zn)、钙(Ca)、锶(Sr)、钨(W)、铝(Al)、锂(Li)、钾(K)、锆(Zr)、钒(V)、硒(Se)、铁(Fe)、铟(In)、锰(Mn)、锡(Sn)、镍(Ni)、锑(Sb)、银(Ag)、硅(Si)、铒(Er)、锗(Ge)、钛(Ti)、镓(Ga)、铈(Ce)、铌(Nb)、钐(Sm)及镧(La)等,其比例为所述无铅玻璃料的约0.1至约10重量%。本申请的另一进一步较佳实施例为所述有机载体包含一种或多种功能性添加剂,例如:黏度调整剂、分散剂、触变剂、湿润剂等添加剂。
本申请另一方面提供一种制品,包含一半导体基底,以及设置在该半导体基底上如上述的导电浆。在本申请的一较佳实施例中,所述制品为半导体装置。在本申请的另一较佳实施例中,所述半导体装置为太阳能电池。
上述内容已广泛地概述本申请的技术特征及其技术效果。本申请所属领域技术中具有通常知识者应理解,所公开的具体实施方式可轻易地被组合、修饰、置换及/或转用于本申请的技术思想范围内的其他物品、方法或用途,此均等范围并不违反权利要求书中所请求的保护范围。
为了充分了解本申请,于下文对本申请的例示性实施方式为详细说明,其并非用以限定本申请。本申请亦可为其他形式的实施方式进行实施。
本申请的含无铅玻璃块的导电浆可应用于各种产业,较佳可应用于半导体制造业,更佳可应用于太阳能电池制造业。所述导电浆包含:(a)导电金属或其衍生物,(b)包含碲-铋-氧化物的无铅玻璃料,以及(c)有机载体。其中,(a)导电金属及(b)无铅玻璃料等无机成分是均匀分散在(c)有机载体中。
于本申请中,有机载体不属于固体成分的一部分,因此,固体重量是指(a)导电金属及(b)无铅玻璃料等固体成分的总重量。
本申请的导电金属并未特别地限制,只要对本申请的技术效果没有负面影响即可。所述导电金属可为单一元素,选自于银、铝及铜;亦可为合金或混合的金属,例如:金、铂、钯及镍等。然而由导电度的观点,使用纯银为较佳者。
当所述导电金属为银时,可为银金属、银衍生物及/或其混合物的形式。例示性的银衍生物包含氧化银(Ag2O)、银盐(例如:氯化银(AgCl)、硝酸银(AgNO3)、醋酸银(AgOOCCH3)、三氟醋酸银(AgOOCF3)或磷酸银(Ag3PO4))、表面上涂布银层的涂银复合物或以银为主成分的银合金等。
所述导电金属可为粉末形式(例如:球形、片形、不定形及/或其混合)或胶态悬浮液形式等已知者。所述导电金属的平均粒度并未特别地限制,较佳为0.1至10微米,亦可使用平均粒度、粒度分布或形状等不同的导电金属混合物。
在本申请的一较佳实施例中,所述导电金属或其衍生物占该导电浆的固体成分的约85至约99.5重量%。
本申请的无铅玻璃料是完全不含铅的成分,具体而言,不含任何铅及其衍生物(例如:一氧化铅(PbO)、二氧化铅(PbO2)或四氧化三铅(Pb3O4)等铅氧化物)。在本申请的一具体实施例中,所述无铅玻璃料是以氧化碲与氧化铋为主要成分。在本申请的一较佳实施例中,氧化碲与氧化铋的比例分别为约55至约90重量%及约10至约45重量%,此系以两者的总重量为基础。在本申请的另一较佳实施例中,氧化碲与氧化铋的比例分别为约63至约82重量%及约18至约37重量%,此系以两者的总重量为基础。在本申请的再一较佳实施例中,氧化碲与氧化铋的比例分别为约70至约75重量%及约25至约30重量%,此系以两者的总重量为基础。
在本申请的进一步较佳实施例中,氧化碲与氧化铋的混合物包含一种或多种金属氧化物,例如:氧化锆(ZrO2)、五氧化二钒(V2O5)、氧化银(Ag2O)、三氧化二铒(Er2O3)、氧化锡(SnO)、氧化镁(MgO)、三氧化二铷(Nd2O3)、三氧化二铝(Al2O3)、二氧化硒(SeO2)、二氧化钛(TiO2)、氧化钠(Na2O)、氧化钾(K2O)、五氧化二磷(P2O5)、二氧化钼(MoO2)、二氧化锰(MnO2)、氧化镍(NiO)、氧化锂(Li2O)、三氧化钨(WO3)、三氧化二钐(Sm2O3)、二氧化锗(GeO2)、二氧化锌(ZnO)、三氧化二铟(In2O3)、三氧化二镓(Ga2O3)、二氧化硅(SiO2)及三氧化二铁(Fe2O3)等。因此,本申请所述「碲-铋-氧化物」亦可包含有一种或多种金属元素或其氧化物,例如:磷(P)、钡(Ba)、钠(Na)、镁(Mg)、锌(Zn)、钙(Ca)、锶(Sr)、钨(W)、铝(Al)、锂(Li)、钾(K)、锆(Zr)、钒(V)、硒(Se)、铁(Fe)、铟(In)、锰(Mn)、锡(Sn)、镍(Ni)、锑(Sb)、银(Ag)、硅(Si)、铒(Er)、锗(Ge)、钛(Ti)、镓(Ga)、铈(Ce)、铌(Nb)、钐(Sm)及镧(La)等,其比例为该无铅玻璃料的约0.1至约10重量%。
本申请的(a)导电金属及(b)无铅玻璃料等固体的无机成分与(c)液体的有机载体混合而形成导电浆。适合的有机载体,可使该等无机成分均匀分散于其中,并具有适当的黏度而使该等无机成分可藉由网版印刷、刻板印刷等方式传递至抗反射涂层的表面上。所述导电浆且须具有良好的干燥速率及优异的烧渗性质。
所述有机载体是指一种溶剂,其并未特别地限制,可适当地选择自已知用于导电浆的溶剂。例示性的溶剂包含醇类(例如:异丙醇)、醇酯(例如:丙酸酯、邻苯二甲酸二丁酯)及醇醚(例如:二乙二醇丁醚)等或其混合物;较佳地,所述溶剂是沸点约120℃至约300℃的醇醚;最佳地,所述溶剂是二乙二醇丁醚(butylcarbitol)。所述有机载体可进一步包含挥发性液体,以促进导电浆施用到半导体基底上之后的快速硬化。
在本申请的一较佳实施例中,所述有机载体是包含聚合物与溶剂的溶液。因为由溶剂和溶解的聚合物组成的有机载体分散导电金属及无铅玻璃料等无机成分,容易制备具有适当黏度的导电浆;于印刷至抗反射涂层的表面并经干燥后,聚合物也提高了导电浆的黏着度及原始强度。
例示性的聚合物包含纤维素(例如:乙基纤维素(ethylcellulose)、硝化纤维素、乙基羟乙基纤维素、羧甲基纤维素、羟丙基纤维素或其他纤维素衍生物)、低级醇的聚(甲基)丙烯酸树脂、酚树脂(例如:苯酚树脂)、醇酸树脂(例如:乙二醇单乙酸酯)等或其混合物;较佳地,所述聚合物是纤维素;最佳地,所述聚合物是乙基纤维素。
在本申请的较佳实施例中,有机载体包含溶于二乙二醇丁醚的乙基纤维素。
在本申请的另一进一步较佳实施例中,所述有机载体包含一种或多种功能性添加剂。例示性的功能性添加剂包含黏度调整剂、分散剂、触变剂、湿润剂及/或视需要的其他添加剂(例如:着色剂、防腐剂或氧化剂)等已知者,只要对本申请的技术效果没有负面影响即可。
在本申请的导电浆中,(a)导电金属及(b)无铅玻璃料等无机成分与(c)有机载体的比值,是由印刷该导电浆至抗反射涂层的需求而决定所述导电浆所需的黏度。通常所述导电浆包含约70至约95重量%的无机成分及约5至约30重量%的有机载体。
本申请的导电浆先进行印刷步骤(例如:网版印刷、刻板印刷等已知方式),在抗反射涂层上将所述导电浆印刷为栅线或其他图案。之后于含氧气的环境(例如:空气)中进行烧渗步骤(加热至约850至约950℃的温度,加热时间约0.05至约5分钟),以去除有机载体并烧结导电金属,使得该导电浆没有任何有机物质,并使得该导电浆于烧结期间穿透该抗反射涂层,接触到下方的半导体基底及一个或多个抗反射涂层。此烧渗步骤使得所述半导体基底与所述栅线或其他图案间,透过金属触点而电性接触,进而形成正面电极。
本申请另一方面涉及一种制品,较佳地,可用于制备半导体装置,更佳地,可用于制备太阳能电池。在本申请的实施例中,提供半导体基底(所述半导体基底包含半导体晶片、玻璃基底或适合形成太阳能电池的其他基底),于所述半导体基底上设置本申请的含无铅玻璃料的导电浆及一个或多个抗反射涂层(所述抗反射涂层可由已知方法涂布于所述半导体基底上,例如化学气相沉积、电浆增强气相沉积等),并经包含上述烧渗步骤的已知半导体制程,即可制得所述制品。
在本申请的较佳实施例中,所述半导体基底包含不定形的、多晶的或单晶的硅。在本申请的另一较佳实施例中,所述抗反射涂层包含二氧化硅、二氧化钛、氮化硅或其他已知的涂层。
与现有技术相比,本申请的主要技术效果是提供对环境友好、可于低温烧结、却仍具备已知含铅玻璃料特性等优异功效的含无铅玻璃料的导电浆,以及包含所述导电浆的制品,其不含铅,但能够于烧渗后具备良好的基底黏着性及优异的转换效率,以达成提供环保导电浆材料目的。
以下透过实施例对本申请进行更详细地说明,并无任何限制本申请的目的。
附图说明
无
具体实施方式
制备含无铅玻璃料的导电浆
导电浆的有机载体制备系先将5至25克重的乙基纤维素溶解于5至75克重的二乙二醇丁醚中,并添加少量黏度调整剂、分散剂、触变剂、湿润剂而得。再将80至99.5克重的工业级银粉原料、0.1至10克重的无铅玻璃料(表1,实施例G1至G15)及10至30克重的有机载体,于三辊研磨机(three-rollmill)混合分散均匀,以制得一糊状或膏状的导电浆。
另以相同方式制备含铅玻璃料(表2,比较例PG1至PG5)。
表1无铅玻璃料(TeO2-Bi2O3)的成分及其重量百分比(实施例)
wt% | G1 | G2 | G3 | G4 | G5 | G6 | G7 | G8 | G9 | G10 | G11 | G12 | G13 | G14 | G15 |
TeO2 | 56 | 60 | 63.5 | 67.5 | 72 | 75 | 77.5 | 82.0 | 86 | 89.5 | 72.5 | 70 | 85 | 65 | 66.5 |
Bi2O3 | 43 | 40 | 35 | 32.5 | 27.5 | 25 | 22.5 | 18.0 | 14 | 10.5 | 25 | 10 | 10 | 15 | 20 |
TiO2 | 0.1 | 3 | |||||||||||||
ZnO | 0.5 | 1 | 5 | 3 | 0.1 | ||||||||||
SiO2 | 0.5 | 3 | |||||||||||||
Na2O | 0.5 | 5 | 0.1 | ||||||||||||
Li2O | 0.1 | 2 | 5 | 2 | 8 | ||||||||||
Al2O3 | 2 | 4.3 | |||||||||||||
MgO | 0.5 | 1 | 3 | ||||||||||||
P2O5 | 0.3 | 3.5 | 0.5 | ||||||||||||
Fe2O3 | 0.5 | 0.5 | 3 | ||||||||||||
WO3 | 0.5 | 5 | 0.5 | ||||||||||||
total(g) | 100 | 100 | 100 | 100 | 100 | 100 | 100 | 100 | 100 | 100 | 100 | 100 | 100 | 100 | 100 |
表2含铅玻璃料(PbO-TeO2-Bi2O3)的成分及其重量百分比(比较例)
wt% | PG1 | PG2 | PG3 | PG4 | PG5 |
SiO2 | 1.5 | 9.2 | 6 | ||
PbO | 27.5 | 85.9 | 21 | 58 | 25 |
TeO2 | 66.5 | 4.9 | 64 | 20 | 68 |
ZnO | 2 | 6 | 7 | 3 | |
Bi2O3 | 2.5 | 9 | 7.5 | 4 | |
Al2O3 | 1.5 | ||||
WO3 | |||||
total(g) | 100 | 100 | 100 | 100 | 100 |
制备太阳能电池的正面电极
使用网版印刷将含无铅玻璃的导电浆(实施例G1至G15)涂布于太阳能电池基底的正面,该太阳能电池基底的表面已预先经抗反射涂层(一氮化硅)处理,而该太阳能电池基底的背面电极已预先经铝胶(GSMC公司,型号A136)处理。网版印刷后的干燥温度为约100至约250℃、干燥时间为约5至约30分钟(视有机载体的种类及印刷重量的不同而有差异),网版印刷步骤即完成。
使用红外线传送带式烧结炉对干燥后的含无铅玻璃导电浆进行烧渗步骤,烧结温度为约850至约950℃,烧渗后的太阳能电池基底的正面及背面皆具备固态电极。
另以相同方式制备含铅玻璃料(比较例PG1至PG5)为正面电极的太阳能电池。
太阳能电池的性能测试
将已制得太阳能电池置于一太阳能测试机台(Berger公司,PulsedSolarLoadPSL-SCD),于AM1.5G的太阳状态下测量该太阳能电池的开路电压(Uoc,单位V)、短路电流(Isc,单位A)、串联电阻(Rs,单位Ω)、填充因子(FF,单位%)及转换效率(Ncell,单位%)等电气特性,详见于表3及表4。
表3涂布含无铅玻璃料的导电浆的太阳能电池(实施例)
Glasses | Uoc | Isc | Rs | FF | Ncell(%) |
G1 | 0.6277 | 8.664 | 0.00289 | 78.3 | 17.49 |
G2 | 0.6271 | 8.674 | 0.00314 | 78.2 | 17.47 |
G3 | 0.6274 | 8.689 | 0.00309 | 78.0 | 17.47 |
G4 | 0.6270 | 8.679 | 0.00285 | 78.3 | 17.50 |
G5 | 0.6267 | 8.682 | 0.00284 | 78.2 | 17.49 |
G6 | 0.6275 | 8.695 | 0.00289 | 78.3 | 17.55 |
G7 | 0.6272 | 8.681 | 0.00297 | 78.2 | 17.49 |
G8 | 0.6261 | 8.676 | 0.00271 | 78.3 | 17.47 |
G9 | 0.6266 | 8.672 | 0.00270 | 78.5 | 17.52 |
G10 | 0.6257 | 8.683 | 0.00275 | 78.3 | 17.48 |
G11 | 0.6259 | 8.684 | 0.00278 | 78.4 | 17.50 |
G12 | 0.6251 | 8.682 | 0.00261 | 78.4 | 17.49 |
G13 | 0.6261 | 8.679 | 0.00267 | 78.6 | 17.55 |
G14 | 0.6259 | 8.679 | 0.0027 | 78.4 | 17.50 |
G15 | 0.6251 | 8.695 | 0.00271 | 78.4 | 17.50 |
表4涂布含铅玻璃料的导电浆的太阳能电池(比较例)
Glass | Uoc | Isc | Rs | FF | Ncell(%) |
PG1 | 0.6261 | 8.664 | 0.00264 | 78.4 | 17.49 |
PG2 | 0.6208 | 8.550 | 0.00320 | 78.4 | 17.09 |
PG3 | 0.6240 | 8.780 | 0.00412 | 76.7 | 17.27 |
PG4 | 0.6206 | 8.690 | 0.00410 | 77.5 | 17.17 |
PG5 | 0.6228 | 8.655 | 0.00310 | 78.9 | 17.47 |
由表3及表4的性能测试可知,本申请包含碲-铋-氧化物的无铅玻璃料的导电浆(实施例G1、G2、G3、G5、G7、G8、G10及G12)大部分具备与包含铅-碲-铋-氧化物的含铅玻璃料的导电浆相近的转换效率;本申请少部分的含无铅玻璃料的导电浆(实施例G4、G6、G9、G11、G13至G15)甚至较含铅玻璃料的导电浆具备更佳的转换效率。
因此,本申请已提供对环境友好、可于低温烧结、却仍具备已知含铅玻璃料特性等优异功效的无铅导电浆。
上述较佳实施例仅举例说明本申请的技术特征及其技术效果,所述实施例的技术仍可适当地进行各种实质等效组合、修饰、置换及/或转用方式予以实施。因此,本申请的权利范围须以权利要求书中所界定的范围为准。
Claims (13)
1.一种导电浆,其特征在于,包括:(a)导电金属或其衍生物,占固体重量约85至约99.5重量%;(b)包含碲-铋-氧化物的无铅玻璃料,占固体重量的约0.5至约15重量%;以及(c)有机载体;所述固体重量是指(a)导电金属及(b)无铅玻璃料的总重量。
2.如权利要求1所述的导电浆,其特征在于,其中所述导电金属或其衍生物包含银粉。
3.如权利要求1所述的导电浆,其特征在于,其中所述无铅玻璃料中氧化碲与氧化铋的比例分别为约55至约90重量%及约10至约45重量%。
4.如权利要求3所述的导电浆,其特征在于,其中在所述碲-铋-氧化物中,氧化碲与氧化铋的比例分别为约63至约82重量%及约18至约37重量%。
5.如权利要求4所述的导电浆,其中所述氧化碲与氧化铋的比例分别为约70至约75重量%及约25至约30重量%。
6.如权利要求1所述的导电浆,其特征在于,进一步包含一种或多种选自下列组成的群组的金属氧化物:氧化锆(ZrO2)、五氧化二钒(V2O5)、氧化银(Ag2O)、三氧化二铒(Er2O3)、氧化锡(SnO)、氧化镁(MgO)、三氧化二铷(Nd2O3)、三氧化二铝(Al2O3)、二氧化硒(SeO2)、二氧化钛(TiO2)、氧化钠(Na2O)、氧化钾(K2O)、五氧化二磷(P2O5)、二氧化钼(MoO2)、二氧化锰(MnO2)、氧化镍(NiO)、氧化锂(Li2O)、三氧化钨(WO3)、三氧化二钐(Sm2O3)、二氧化锗(GeO2)、二氧化锌(ZnO)、三氧化二铟(In2O3)、三氧化二镓(Ga2O3)、二氧化硅(SiO2)及三氧化二铁(Fe2O3)。
7.如权利要求1所述的导电浆,其特征在于,其中所述无铅玻璃料进一步包含一种或多种选自下列组成的群组的金属元素或其氧化物:磷(P)、钡(Ba)、钠(Na)、镁(Mg)、锌(Zn)、钙(Ca)、锶(Sr)、钨(W)、铝(Al)、锂(Li)、钾(K)、锆(Zr)、钒(V)、硒(Se)、铁(Fe)、铟(In)、锰(Mn)、锡(Sn)、镍(Ni)、锑(Sb)、银(Ag)、硅(Si)、铒(Er)、锗(Ge)、钛(Ti)、镓(Ga)、铈(Ce)、铌(Nb)、钐(Sm)及镧(La),其比例为所述无铅玻璃料的约0.1至约10重量%。
8.如权利要求1所述的导电浆,其特征在于,其中所述有机载体是包含聚合物与溶剂的溶液。
9.如权利要求1所述的导电浆,其特征在于,其中所述有机载体进一步包含一种或多种选自黏度调整剂、分散剂、触变剂及湿润剂组成的群组的功能性添加剂。
10.一种制品,其特征在于,包含半导体基底,以及设置在所述半导体基底上如权例要求1至9中任一项的导电浆。
11.如权利要求10所述的制品,其特征在于,进一步包含一个或多个设置于所述半导体基底上的抗反射涂层,且所述导电浆与所述抗反射涂层接触并与所述半导体基底电性接触。
12.如权利要求11所述的制品,其特征在于,其中所述制品为半导体装置。
13.如权利要求12所述的制品,其特征在于,其中所述半导体装置为太阳能电池。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103142663 | 2014-12-08 | ||
TW103142663A TWI576863B (zh) | 2014-12-08 | 2014-12-08 | 一種含無鉛玻璃熔塊之導電漿(一) |
Publications (1)
Publication Number | Publication Date |
---|---|
CN105679405A true CN105679405A (zh) | 2016-06-15 |
Family
ID=53437720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510831380.8A Pending CN105679405A (zh) | 2014-12-08 | 2015-11-25 | 含无铅玻璃料的导电浆 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20160163890A1 (zh) |
EP (1) | EP3031784A1 (zh) |
JP (1) | JP6084249B2 (zh) |
CN (1) | CN105679405A (zh) |
TW (1) | TWI576863B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106448803A (zh) * | 2016-08-31 | 2017-02-22 | 王立建 | 背接触太阳能电池灌孔电子浆料 |
CN109036622A (zh) * | 2017-06-09 | 2018-12-18 | 硕禾电子材料股份有限公司 | 导电浆组成物及使用导电浆组成物的物件 |
CN109300573A (zh) * | 2018-09-27 | 2019-02-01 | 海宁市瑞银科技有限公司 | Perc太阳能电池用低银含高附着力背银浆料及其制备方法 |
CN110797133A (zh) * | 2019-10-23 | 2020-02-14 | 兴勤电子工业股份有限公司 | 铝电极浆料及其制法与陶瓷正温度系数热敏电阻 |
CN111863309A (zh) * | 2020-08-26 | 2020-10-30 | 南通天盛新能源股份有限公司 | 一种应用于n型太阳能电池的高拉力主栅银浆及其制备方法 |
CN112071922A (zh) * | 2020-09-09 | 2020-12-11 | 西安宏星电子浆料科技股份有限公司 | 一种太阳能正银栅线的网印方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160057583A (ko) * | 2014-11-13 | 2016-05-24 | 삼성에스디아이 주식회사 | 태양전지 전극용 페이스트 및 이로부터 제조된 전극 |
EP3542396A4 (en) | 2016-11-18 | 2020-06-17 | Samtec Inc. | FILLING MATERIALS AND METHOD FOR FILLING THROUGH HOLES OF A SUBSTRATE |
KR102008186B1 (ko) * | 2017-02-09 | 2019-08-07 | 삼성에스디아이 주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
US12009225B2 (en) | 2018-03-30 | 2024-06-11 | Samtec, Inc. | Electrically conductive vias and methods for producing same |
EP3829265A4 (en) * | 2018-07-23 | 2022-03-02 | China Tabacco Hubei Industrial Corporation Limited | CERAMIC HEATER AND METHOD OF MANUFACTURE AND USE OF A CERAMIC HEATER |
TW202129882A (zh) | 2019-09-30 | 2021-08-01 | 美商山姆科技公司 | 導電通孔和其製造方法 |
JPWO2022195838A1 (zh) * | 2021-03-19 | 2022-09-22 | ||
WO2024057484A1 (ja) * | 2022-09-15 | 2024-03-21 | 株式会社ニコン | ガラス組成物、及び標準試料ガラス |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100244205A1 (en) * | 2008-01-30 | 2010-09-30 | Basf Se | Glass Frits |
CN102956283A (zh) * | 2012-10-25 | 2013-03-06 | 上海玻纳电子科技有限公司 | 一种新型高效晶硅太阳能电池用无铅化银浆及其制备与应用 |
CN103443025A (zh) * | 2011-04-05 | 2013-12-11 | E.I.内穆尔杜邦公司 | 包含铋-碲-氧化物的厚膜浆料及其在制造半导体器件中的用途 |
CN103493148A (zh) * | 2011-04-21 | 2014-01-01 | 昭荣化学工业株式会社 | 导电性糊膏 |
WO2014126293A1 (ko) * | 2013-02-15 | 2014-08-21 | 제일모직 주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
CN104064286A (zh) * | 2014-07-10 | 2014-09-24 | 吴旦英 | 一种太阳能电池用银浆的制备方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5066621A (en) * | 1990-06-21 | 1991-11-19 | Johnson Matthey Inc. | Sealing glass composition and electrically conductive formulation containing same |
JP5559509B2 (ja) * | 2009-10-28 | 2014-07-23 | 昭栄化学工業株式会社 | 太陽電池電極形成用導電性ペースト |
US8790550B2 (en) * | 2011-06-06 | 2014-07-29 | E I Du Pont De Nemours And Company | Low temperature fireable thick film silver paste |
US9023254B2 (en) * | 2011-10-20 | 2015-05-05 | E I Du Pont De Nemours And Company | Thick film silver paste and its use in the manufacture of semiconductor devices |
EP2607327A1 (en) * | 2011-12-23 | 2013-06-26 | Heraeus Precious Metals GmbH & Co. KG | Thick-film composition containing antimony oxides and their use in the manufacture of semi-conductor devices |
US8845932B2 (en) * | 2012-04-26 | 2014-09-30 | E I Du Pont De Nemours And Company | Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices |
JP2015187063A (ja) * | 2014-01-17 | 2015-10-29 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | 導電性ペースト組成物のための鉛−ビスマス−テルル無機反応系 |
JP5856277B1 (ja) * | 2014-11-27 | 2016-02-09 | 株式会社ノリタケカンパニーリミテド | 太陽電池電極用ペーストおよび太陽電池セル |
-
2014
- 2014-12-08 TW TW103142663A patent/TWI576863B/zh active
-
2015
- 2015-04-15 JP JP2015083281A patent/JP6084249B2/ja active Active
- 2015-10-16 US US14/885,119 patent/US20160163890A1/en not_active Abandoned
- 2015-10-22 EP EP15190990.0A patent/EP3031784A1/en not_active Withdrawn
- 2015-11-25 CN CN201510831380.8A patent/CN105679405A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100244205A1 (en) * | 2008-01-30 | 2010-09-30 | Basf Se | Glass Frits |
CN103443025A (zh) * | 2011-04-05 | 2013-12-11 | E.I.内穆尔杜邦公司 | 包含铋-碲-氧化物的厚膜浆料及其在制造半导体器件中的用途 |
CN103493148A (zh) * | 2011-04-21 | 2014-01-01 | 昭荣化学工业株式会社 | 导电性糊膏 |
CN102956283A (zh) * | 2012-10-25 | 2013-03-06 | 上海玻纳电子科技有限公司 | 一种新型高效晶硅太阳能电池用无铅化银浆及其制备与应用 |
WO2014126293A1 (ko) * | 2013-02-15 | 2014-08-21 | 제일모직 주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
CN104064286A (zh) * | 2014-07-10 | 2014-09-24 | 吴旦英 | 一种太阳能电池用银浆的制备方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106448803A (zh) * | 2016-08-31 | 2017-02-22 | 王立建 | 背接触太阳能电池灌孔电子浆料 |
CN109036622A (zh) * | 2017-06-09 | 2018-12-18 | 硕禾电子材料股份有限公司 | 导电浆组成物及使用导电浆组成物的物件 |
CN109036622B (zh) * | 2017-06-09 | 2019-11-15 | 硕禾电子材料股份有限公司 | 导电浆组成物及使用导电浆组成物的太阳能电池 |
CN109300573A (zh) * | 2018-09-27 | 2019-02-01 | 海宁市瑞银科技有限公司 | Perc太阳能电池用低银含高附着力背银浆料及其制备方法 |
CN110797133A (zh) * | 2019-10-23 | 2020-02-14 | 兴勤电子工业股份有限公司 | 铝电极浆料及其制法与陶瓷正温度系数热敏电阻 |
CN110797133B (zh) * | 2019-10-23 | 2022-03-25 | 兴勤电子工业股份有限公司 | 铝电极浆料及其制法与陶瓷正温度系数热敏电阻 |
CN111863309A (zh) * | 2020-08-26 | 2020-10-30 | 南通天盛新能源股份有限公司 | 一种应用于n型太阳能电池的高拉力主栅银浆及其制备方法 |
CN111863309B (zh) * | 2020-08-26 | 2021-10-08 | 南通天盛新能源股份有限公司 | 一种应用于n型太阳能电池的高拉力主栅银浆及其制备方法 |
CN112071922A (zh) * | 2020-09-09 | 2020-12-11 | 西安宏星电子浆料科技股份有限公司 | 一种太阳能正银栅线的网印方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI576863B (zh) | 2017-04-01 |
EP3031784A1 (en) | 2016-06-15 |
JP2016110971A (ja) | 2016-06-20 |
US20160163890A1 (en) | 2016-06-09 |
JP6084249B2 (ja) | 2017-02-22 |
TW201515017A (zh) | 2015-04-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105679405A (zh) | 含无铅玻璃料的导电浆 | |
CN105679406A (zh) | 含无铅玻璃料的导电浆 | |
CN105679403A (zh) | 含无铅玻璃料的导电浆 | |
CN105679402A (zh) | 含无铅玻璃料的导电浆 | |
CN105679404A (zh) | 含无铅玻璃料的导电浆 | |
JP6396335B2 (ja) | 太陽電池電極形成用組成物及びこれを用いて製造された電極 | |
TWI520156B (zh) | 用於太陽能電池電極的組成物以及使用其製造的電極 | |
CN105679399A (zh) | 含无铅玻璃料的导电浆 | |
KR20190113131A (ko) | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 | |
CN108022670B (zh) | 用于形成太阳电池电极的组合物及使用其制备的电极 | |
KR20200078173A (ko) | 태양전지 전극 형성 방법 및 태양전지 | |
KR20200040626A (ko) | 태양전지 전극 형성 방법, 이로부터 제조된 태양전지 전극 및 태양전지 | |
TWI741283B (zh) | 用於太陽能電池電極的組成物以及太陽能電池 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160615 |
|
RJ01 | Rejection of invention patent application after publication |