CN105679371B - DRAM neutron single-particle effect test control methods and device - Google Patents
DRAM neutron single-particle effect test control methods and device Download PDFInfo
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- CN105679371B CN105679371B CN201410678067.0A CN201410678067A CN105679371B CN 105679371 B CN105679371 B CN 105679371B CN 201410678067 A CN201410678067 A CN 201410678067A CN 105679371 B CN105679371 B CN 105679371B
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Abstract
The present invention relates to DRAM neutron single-particle effect test control methods, including：S1：Multiple control parameters of device are configured and are calculated；S2：Device is controlled in the case where completing the constraints that setting is combined with multiple control parameters of calculating.The control method of Parameter Conditions and each parameter of constraint that clear stipulaties of the present invention experiment should control, optimize and proposes complete experiment Process Control Theory method, it ensure that the correctness of test result, also lay a good foundation for guarantee aviation/aerospace system system Reliability Research in space environment.The invention also discloses DRAM neutron single-particle effect test control devices.
Description
Technical field
The present invention relates to automatic control technology field more particularly to DRAM neutron single-particle effect test control methods and dresses
It sets.
Background technology
Currently, in order to study the sensitivity characteristic of DRAM, the country replaces real space ring with the neutron of 14MeV energy at present
Neutron in border carries out irradiation test to DRAM.During the test, how Control experiment parameter, constrained test condition, ensure
Test result accuracy becomes the important prerequisite effectively studied.The research of country's single particle effect still belongs to just step at present
Section, does not more establish complete test result accuracy control system.Therefore, enter from the control method that is determined at of test parameters
Hand has formulated test battery Process Control Theory, it is ensured that the correctness of test result, and then to ensure aviation/space flight system
The system reliability united in space environment is taken a firm foundation.
Specifically, DRAM is the key core device of air environment, equipment where working condition will directly affect
Function.However in the flying height of 3km-20km, in an atmosphere under the action of son, the sensitive function block of DRAM will will produce
Single particle effect causes software error and hardware fault.
Further, the sensitive position of DRAM is storage unit, and in actual space environment, various sensitive function blocks have
Single-particle inversion may occur.However in simulated experiment at this stage, we just in equipment some or it is a few
Part sensitive function block on a Sensitive Apparatus carries out irradiation test, and there is no consider all sensitive function block institute energy comprehensively
Caused by endanger；On the other hand, when carrying out irradiation test, device total bit B is not discussed strictly, does not give error
Accidentally number N adds up the control method of fluence F, also not to testing cut-off condition Nend, FendTheory analysis is carried out, these will all lead
It causes the normalization of test procedure insufficient, and then influences the accuracy of test result.
Invention content
The technical problem to be solved by the present invention is to the parameter that how should be controlled from experiment and go out parameter control method
Start with, optimize test battery Process Control Theory, can guarantee test result correctness and aviation/aerospace system
The critical issue of system reliability in space environment.
For this purpose, the present invention proposes DRAM neutron single-particle effect test control methods, including specific following steps：
S1：Multiple control parameters of device are configured and are calculated；
S2：Device is controlled in the case where completing the constraints that setting is combined with multiple control parameters of calculating.
Specifically, the multiple control parameter includes：Error number observation N, do not protect a B, fluence rate F, device sensitive
Function block number i, type of error number j, experiment cut-off detection error number NendAnd cut-off fluence Fend。
Further, the error number observation N is calculated by formula and is obtained, and the formula is：
N=N0* [error propagation rate/(software use-case coverage rate * software use-cases test coverage)], wherein N0It is initial wrong
Accidentally number observation, the error propagation rate, software use-case coverage rate and software use-case test coverage are experiment joint debugging connection
Acquired value when examination.
Further, described that B is not protected to calculate acquisition by formula, the formula is：
B=B0* the non-protection ratios of resource utilization *, wherein B0For true configuration work digit, the resource utilization with
And non-protection ratio is acquired value when testing combined test.
Further, the fluence rate F is calculated by formula and is obtained, and the formula is：
Wherein, F is that the neutron that test device receives accumulates fluence, unit n/cm2；Netarea is the target monitored
The α populations that source generates；R is test device to the distance in target source, unit cm.
Further, the experiment cut-off detection error number NendAnd cut-off fluence FendAcquisition be specially：
First, in the case of device not reproducible sampling, level of signifiance α=0.05, when confidence level CL=1- α, according to
The definition of confidence interval, establishes computation model：
Again, willAndSubstitution is established computation model and is arranged, and formula is obtained：
Finally, the cut-off detection error number N is obtained according to the respective value of different accuracy in preset tableendAnd cut-off note
Measure Fend。
For this purpose, the present invention proposes DRAM neutron single-particle effect test control devices, including：
Computing module is set, is configured and calculates for multiple control parameters to device；
Control module, for being carried out to device in the case where completing the constraints that setting is combined with multiple control parameters of calculating
Control.
Specifically, the multiple control parameter includes：Error number observation N, do not protect a B, fluence rate F, device sensitive
Function block number i, type of error number j, experiment cut-off detection error number NendAnd cut-off fluence Fend。
The present invention discloses DRAM neutron single-particle effect test control methods, the ginseng that should be controlled by really defining experiment
The control method of said conditions and each parameter of constraint optimizes and proposes complete experiment Process Control Theory method, ensure that
The correctness of test result is also laid a good foundation for guarantee aviation/aerospace system system Reliability Research in space environment.This
Invention also discloses DRAM neutron single-particle effect test control devices.
Description of the drawings
The features and advantages of the present invention can be more clearly understood by reference to attached drawing, attached drawing is schematically without that should manage
Solution is carries out any restrictions to the present invention, in the accompanying drawings：
Fig. 1 shows the step flow chart of the DRAM neutron single-particle effect test control methods in the embodiment of the present invention；
Fig. 2 shows the structure diagrams of the DRAM neutron single-particle effect test control devices in the embodiment of the present invention.
Specific implementation mode
Below in conjunction with attached drawing, embodiments of the present invention is described in detail.
In order to be better understood from and apply DRAM neutron single-particles effect test control method proposed by the present invention and device,
It is described in detail with following attached drawing example.
As shown in Figure 1, the present invention provides DRAM neutron single-particle effect test control methods, including specific following step
Suddenly：
Step S1：Multiple control parameters of device are configured and are calculated.
Specifically, multiple control parameters include：Error number observation N, a B, fluence rate F, device sensitive function are not protected
Block number i, type of error number j, experiment cut-off detection error number NendAnd cut-off fluence Fend。
Further, error number observation N is calculated by formula and is obtained, and formula is：
N=N0* [error propagation rate/(software use-case coverage rate * software use-cases test coverage)], wherein N0It is initial wrong
Accidentally number observation, when error propagation rate, software use-case coverage rate and software use-case test coverage are experiment combined test
Acquired value.
Further, there are many influence factor of error number observation N, include mainly：Device architecture, i.e. producer, the age,
The device example of model, process needs the device function block monitored, single particle effect type；Do not protect position, i.e., it is all can
The positions bit (total bit digits, resource utilization) of function, safeguard procedures can be executed and do not protect bit；Test case, i.e., it is defeated
Enter, export, testing instruction, mistake criterion, software use-case coverage rate, software use-case test coverage；Data processing as obtains
Accurate observation N needs to carry out device and estimates work, the preliminary effect for grasping influence factor.
Further, evade gross mistake in a program.Emphasis correlation test program includes：Device is estimated, that is, is grasped
Device architecture does not protect position, test case, data processing method, write-in《Test program》；Combined test, i.e. combined test are remembered
Record relevant information, write-in《Pretest inspection table》；Testing ground is debugged, i.e., testing ground is checked, write-in《Testing ground debugging note
Record table》；Testing ground monitors, i.e., testing ground monitors, write-in《Testing ground record sheet》；Data processing is written《Test number
According to processing record sheet》, wherein《Test program》Middle test monitoring should provide static state, dynamic, resource utilization, test case
The combined test requirement of coverage rate, error propagation rate.
Further, it does not protect B to be calculated by formula to obtain, formula is：
B=B0* the non-protection ratios of resource utilization *, wherein B0For true configuration work digit, the resource utilization with
And non-protection ratio is acquired value when testing combined test.
Specifically, usually configuration needs the working position tested first in experiment, and digit is nearly close to its maximum capacity position
Number, but true configuration work digit B0 need to be recorded；If the digit used is fixed B1 in experiment, and position is fixed,
Then its resource utilization is B1/B0；If the digit used is fixed B1, but position is not fixed, then its resource utilization
It is 1, unless proving its resource utilization on evidence；It does not take ECC, EDAC, Hamming code, CRC etc. to detect in experiment and corrects
Digit B2, then its non-protection ratio is B2/B0.
Further, fluence rate F is calculated by formula and is obtained, and formula is：
Wherein, F is that the neutron that test device receives accumulates fluence, unit n/cm2；Netarea is the target monitored
The α populations that source generates；R is that test device is supervised to the distance in target source, unit cm, and neutron single-particle effect test fluence
It surveys, using the monitoring method with α particles, this monitoring method is most general and most accurately square in the world
Method, error is 1% or so.The test software and test formula structure that fluence monitoring passes through the offer of Chinese courtyard energy research institute
At.
Further, for DRAM, storage unit is the single-particle inversion sensitive volume of device, therefore for DRAM, i=1j=
1, it should in test fully consider all possible fault type of all sensitive function blocks.
Further, experiment cut-off detection error number NendAnd cut-off fluence FendAcquisition be specially：
First, in the case of device not reproducible sampling, level of signifiance α=0.05, when confidence level CL=1- α, according to
The definition of confidence interval, establishes computation model：
Again, willAndSubstitution is established computation model and is arranged, and formula is obtained：
Finally, cut-off detection error number N is obtained according to the respective value of different accuracy in preset tableendAnd cut-off fluence
Fend.For example, according to required precision, it can be calculated by above-mentioned formula and obtain following tables, as shown in Table 1 and Table 2, and can according to following table
The cut-off detection error number N that should at least reach before being terminated with Selection experimentendAnd cut-off fluence Fend。
The relationship of monitoring error number Nend before 1 precision of table is terminated with experiment
| Nend | Standard deviation % | Precision ε % |
| 30 | 18.26% | 35.79% |
| 100 | 10.00% | 19.60% |
| 300 | 5.77% | 11.31% |
| 1000 | 3.16% | 6.19% |
| 3000 | 1.83% | 3.56% |
| 5000 | 1.41% | 2.76% |
The relationship of accumulation fluence Fend before 2 precision of table is terminated with experiment
| Fend | B | σ | Precision ε % |
| 108 | 107 | 10- 13 | 10% |
| 109 | 107 | 10- 13 | 3.16% |
| 1010 | 107 | 10- 13 | 1% |
| 108 | 107 | 10- 14 | 31.6% |
| 109 | 107 | 10- 14 | 10% |
| 1010 | 107 | 10- 14 | 3.16% |
| 108 | 107 | 10- 15 | 100% |
| 109 | 107 | 10- 15 | 31.6% |
| 1010 | 107 | 10- 15 | 10% |
Step S2：Device is controlled in the case where completing the constraints that setting is combined with multiple control parameters of calculating.
The present invention proposes that test battery result accuracy ensures theoretical system, the specification of guarantee test process, for follow-up examination
The analysis and application for testing data provide accurately test result；The clear controlling party for being contemplated that in test factor and each factor
Method is given at the theoretical calculation foundation of the experiment end condition setting under test accuracy constraint；Consider real atmosphere item comprehensively
Device sensitive situations under part and corresponding potential problems provide more section for subsequent crash rate research and safeguard procedures
Learn accurately guidance.
In order to be better understood from and apply DRAM neutron single-particles effect test control method proposed by the present invention, the present invention
DRAM neutron single-particle effect test control devices are taken out in from the above.
As shown in Fig. 2, the present invention provides DRAM neutron single-particle effect tests control devices 10, including：Setting calculates
Module 101 and control module 102.
Specifically, setting computing module 101 is for being configured and calculating to multiple control parameters of device；Control module
102 for controlling device in the case where completing the constraints that setting is combined with multiple control parameters of calculating.Wherein, multiple
Control parameter includes：Error number observation N, a B, fluence rate F, device sensitive function block number i, type of error number j, examination are not protected
Test cut-off detection error number NendAnd cut-off fluence Fend。
The present invention discloses DRAM neutron single-particle effect test control methods, the ginseng that should be controlled by really defining experiment
The control method of said conditions and each parameter of constraint optimizes and proposes complete experiment Process Control Theory method, ensure that
The correctness of test result is also laid a good foundation for guarantee aviation/aerospace system system Reliability Research in space environment.This
Invention also discloses DRAM neutron single-particle effect test control devices.
Although the embodiments of the invention are described in conjunction with the attached drawings, but those skilled in the art can not depart from this hair
Various modifications and variations are made in the case of bright spirit and scope, such modifications and variations are each fallen within by appended claims
Within limited range.
Claims (2)
1.DRAM neutron single-particle effect test control methods, which is characterized in that specifically include following steps：
S1：Multiple control parameters of device are configured and are calculated；
S2：Device is controlled in the case where completing the constraints that setting is combined with multiple control parameters of calculating；
Wherein, the multiple control parameter includes：Error number observation N, a B, fluence rate F, device sensitive function block are not protected
Number i, type of error number j, experiment cut-off detection error number NendAnd cut-off fluence Fend；
Wherein, the error number observation N is calculated by following formula and is obtained：
N=N0* [error propagation rate/(software use-case coverage rate * software use-cases test coverage)], wherein N0For initial error number
Observation, when the error propagation rate, software use-case coverage rate and software use-case test coverage are experiment combined test
Acquired value；
It is described that B is not protected to calculate acquisition by following formula：
B=B0* the non-protection ratios of resource utilization *, wherein B0For true configuration work digit, the resource utilization and not
Protection ratio is acquired value when testing combined test；
The fluence rate F is calculated by following formula and is obtained：
Wherein, F is that the neutron that test device receives accumulates fluence, unit n/cm2；Netarea is that the target source monitored generates
α populations；R is test device to the distance in target source, unit cm；
The device sensitive function block number i and the type of error number j values are as follows：
I=1, j=1；
The experiment cut-off detection error number NendAnd cut-off fluence FendAcquisition be specially：
First, in the case of device not reproducible sampling, level of signifiance α=0.05, when confidence level CL=1- α, according to confidence
The definition in section, establishes computation model：
Again, willAndSubstitution is established computation model and is arranged, and formula is obtained：
Finally, the cut-off detection error number N is obtained according to the respective value of different accuracy in preset tableendAnd cut-off fluence
Fend。
2.DRAM neutron single-particle effect test control devices, which is characterized in that including：
Computing module is set, is configured and calculates for multiple control parameters to device；
Control module, for being controlled to device in the case where completing the constraints that setting is combined with multiple control parameters of calculating
System；
Wherein, the multiple control parameter includes：Error number observation N, a B, fluence rate F, device sensitive function block are not protected
Number i, type of error number j, experiment cut-off detection error number NendAnd cut-off fluence Fend；
Wherein, the error number observation N is calculated by following formula and is obtained：
N=N0* [error propagation rate/(software use-case coverage rate * software use-cases test coverage)], wherein N0For initial error number
Observation, when the error propagation rate, software use-case coverage rate and software use-case test coverage are experiment combined test
Acquired value；
It is described that B is not protected to calculate acquisition by following formula：
B=B0* the non-protection ratios of resource utilization *, wherein B0For true configuration work digit, the resource utilization and not
Protection ratio is acquired value when testing combined test；
The fluence rate F is calculated by following formula and is obtained：
Wherein, F is that the neutron that test device receives accumulates fluence, unit n/cm2；Netarea is that the target source monitored generates
α populations；R is test device to the distance in target source, unit cm；
The device sensitive function block number i and the type of error number j values are as follows：
I=1, j=1；
The experiment cut-off detection error number NendAnd cut-off fluence FendAcquisition be specially：
First, in the case of device not reproducible sampling, level of signifiance α=0.05, when confidence level CL=1- α, according to confidence
The definition in section, establishes computation model：
Again, willAndSubstitution is established computation model and is arranged, and formula is obtained：
Finally, the cut-off detection error number N is obtained according to the respective value of different accuracy in preset tableendAnd cut-off fluence
Fend。
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1674245A (en) * | 2004-03-25 | 2005-09-28 | 瑞萨科技有限公司 | Method for evaluating semiconductor device error and system for supporting the same |
| CN102779079A (en) * | 2011-05-12 | 2012-11-14 | 中国科学院空间科学与应用研究中心 | Configuration method and system used for satellite-bone SRAM (Static Random Access Memory) type FPGA (Field Programmable Gate Array) working on track for long time |
| CN103529380A (en) * | 2012-07-06 | 2014-01-22 | 北京圣涛平试验工程技术研究院有限责任公司 | Monitoring system and monitoring method for SRAM type FPGA (field-programmable gate array) single particle functional interruption |
| CN103744014A (en) * | 2013-12-24 | 2014-04-23 | 北京微电子技术研究所 | SRAM type FPGA single particle irradiation test system and method |
-
2014
- 2014-11-21 CN CN201410678067.0A patent/CN105679371B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1674245A (en) * | 2004-03-25 | 2005-09-28 | 瑞萨科技有限公司 | Method for evaluating semiconductor device error and system for supporting the same |
| CN102779079A (en) * | 2011-05-12 | 2012-11-14 | 中国科学院空间科学与应用研究中心 | Configuration method and system used for satellite-bone SRAM (Static Random Access Memory) type FPGA (Field Programmable Gate Array) working on track for long time |
| CN103529380A (en) * | 2012-07-06 | 2014-01-22 | 北京圣涛平试验工程技术研究院有限责任公司 | Monitoring system and monitoring method for SRAM type FPGA (field-programmable gate array) single particle functional interruption |
| CN103744014A (en) * | 2013-12-24 | 2014-04-23 | 北京微电子技术研究所 | SRAM type FPGA single particle irradiation test system and method |
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