CN105656459A - Method and device for improving rising and falling edges of secondary radar pulse signals - Google Patents
Method and device for improving rising and falling edges of secondary radar pulse signals Download PDFInfo
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- CN105656459A CN105656459A CN201610192117.3A CN201610192117A CN105656459A CN 105656459 A CN105656459 A CN 105656459A CN 201610192117 A CN201610192117 A CN 201610192117A CN 105656459 A CN105656459 A CN 105656459A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/28—Details of pulse systems
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Abstract
The invention belongs to the field of monopulse secondary radar systems and particularly relates to a method and a device for improving rising and falling edges of secondary radar pulse signals. The device comprises a PIN switch unit and a power amplifier unit, a signal input end and a control end of the PIN switch unit are connected with radio-frequency input signals and TTL control signals respectively, a signal output end of the PIN switch unit is connected with a signal input end of the power amplifier unit, and a signal output end of the power amplifier unit outputs radio-frequency output signals. On and off of the PIN switch unit are controlled according to the TTL control signals, and rising and falling edges of secondary radar pulse signals are improved to meet an index requirement of 50ns-100ns. In addition, the method and the device for improving the rising and falling edges of the secondary radar pulse signals have the advantages of structural simplicity, convenience in use and low cost.
Description
Technical field
The invention belongs to monopulse secondary radar system regions, particularly to a kind of device improving secondary radar pulse signal rising and falling edges and ameliorative way thereof.
Background technology
Along with the progress of science and technology, developing rapidly of air-transport industry, air transportation is day by day busy, for ensureing air transportation safety, air traffic control radar is widely used in civilian and military aviation field, and each airport is fitted with secondary radar, secondary radar make consumption increasing. The normally used power tube of secondary radar emissions assembly is LDMOS power transistor, LDMOS power transistor is Control of Voltage conducting type power tube, has the technical characterstic that output is big, power gain is high, little, rising edge of a pulse drops in top and trailing edge is little and does not change with the duty of power transistor.
But owing to the output rising edge of signal of LDMOS power transistor and trailing edge are at about 8ns, and the rising edge of a pulse index request of secondary radar is 50ns��100ns, and trailing edge index request is 50ns��500ns; Therefore the rising edge of LDMOS power transistor and trailing edge can not meet the instructions for use of secondary radar, need radiofrequency signal rising edge and trailing edge are carried out improvement process when therefore using.
Summary of the invention
The present invention is in order to overcome above-mentioned the deficiencies in the prior art, provide a kind of device improving secondary radar pulse signal rising and falling edges, invention not only improves the rising and falling edges of secondary radar pulse signal, make rising edge and trailing edge meet the index request of 50ns��100ns, and possess simple in construction, feature easy to use, with low cost.
For achieving the above object, present invention employs techniques below measure:
A kind of device improving secondary radar pulse signal rising and falling edges, including PIN switch element and Power Amplifier Unit, the signal input part of described PIN switch element, control end connect radio-frequency input signals, TTL control signal respectively, the signal output part of described PIN switch element connects the signal input part of Power Amplifier Unit, the signal output part output radio frequency output signal of described Power Amplifier Unit.
Preferably, described PIN switch element includes PIN diode, the positive terminal of described PIN diode connects one end of the 14th electric capacity, the first inductance, the other end of described 14th electric capacity connects radio-frequency input signals, the other end of the first inductance connects the 15th electric capacity, one end of the 16th electric capacity and TTL control signal, described 15th electric capacity, the 16th electric capacity the equal ground connection of the other end, the negative pole end of described PIN diode connects the signal input part of one end of the second inductance, Power Amplifier Unit, the other end ground connection of described second inductance.
Preferably, described Power Amplifier Unit includes power transistor, the grid of described power transistor connects the first electric capacity, first resistance, 4th electric capacity, one end of 5th electric capacity, the other end of described first electric capacity connects the negative pole end of PIN diode and one end of the second inductance, the other end of described first resistance, and second electric capacity, one end of 3rd electric capacity is all connected with the gate input voltage of described power transistor, described second electric capacity, 3rd electric capacity, 4th electric capacity, the equal ground connection of the other end of the 5th electric capacity, the drain electrode of described power transistor connects the 6th electric capacity, 7th electric capacity, 8th electric capacity, 9th electric capacity, tenth electric capacity, 11st electric capacity, 12nd electric capacity, one end of 13rd electric capacity, and drain electrode power supply, described 7th electric capacity, 8th electric capacity, 9th electric capacity, tenth electric capacity, 11st electric capacity, 12nd electric capacity, the equal ground connection of the other end of the 13rd electric capacity, the other end output radio frequency output signal of described 6th electric capacity.
Further, the model of described PIN diode is the MADP-042405-13060 that M/A COM Inc. of the U.S. produces.
Further, described power transistor is the LDMOSRF power transistor of 500W.
The present invention also provides the ameliorative way of above-mentioned a kind of device improving secondary radar pulse signal rising and falling edges simultaneously, and described ameliorative way concrete steps include:
S1, described PIN switch element signal input part receive radio-frequency input signals, the control end input TTL control signal of PIN switch element, the input time in the forward position of described radio-frequency input signals is in advance the input time in the forward position of described TTL control signal, and lags behind the input time of the tailing edge of TTL control signal the input time of the tailing edge of radio-frequency input signals;
S2, when described TTL control signal is low level, the PIN diode within PIN switch element is in state, described radio-frequency input signals stop by PIN switch element;
S3, described TTL control signal forward position arrive time, the ducting capacity of PIN diode is gradually increased, it is gradually increased by the electric current of the radio-frequency input signals of PIN switch element, until the electric current of radio-frequency input signals reaches maximum, described radio-frequency input signals be improvement from the time required for the 90% of 10% to the current maxima of current maxima after the rising edge of radio-frequency input signals;
When S4, described TTL control signal are high level, the PIN diode within PIN switch element is in the conduction state, and described radio-frequency input signals passes through PIN switch element;
S5, described TTL control signal tailing edge arrive time, the ducting capacity of PIN diode weakens gradually, become minima from maximum gradually by the electric current of the radio-frequency input signals of PIN switch element, described radio-frequency input signals be improvement from the time required for the 10% of 90% to the current maxima of current maxima after the trailing edge of radio-frequency input signals;
S6, the power transistor arranged in Power Amplifier Unit are operated in linear zone; The signal output part of described PIN switch element exports the signal input part to Power Amplifier Unit of the radio-frequency input signals after improving, the radio frequency output signal after the signal output part output amplification of described Power Amplifier Unit.
Preferably, it is 0.3 �� s that the input time in the forward position of described radio-frequency input signals was shifted to an earlier date the input time in the forward position of described TTL control signal, and the input time lagging behind the tailing edge of TTL control signal the input time of the tailing edge of radio-frequency input signals is 0.3 �� s.
The beneficial effects of the present invention is:
1), the present invention includes PIN switch element and Power Amplifier Unit, the signal input part of described PIN switch element, control end connect radio-frequency input signals, TTL control signal respectively, the signal output part of described PIN switch element connects the signal input part of Power Amplifier Unit, the signal output part output radio frequency output signal of described Power Amplifier Unit. Conducting and the cut-off of PIN switch element is controlled by TTL control signal, not only improve the rising and falling edges of secondary radar pulse signal, make rising edge and trailing edge meet the index request of 50ns��100ns, and the present invention possesses simple in construction, feature easy to use, with low cost.
2), the model of described PIN diode be the MADP-042405-13060 that M/A COM Inc. of the U.S. produces, described power transistor is the LDMOSRF power transistor of 500W. The present invention is worked in coordination use by above components and parts, it is achieved that the optimal design of the present invention so that each index of the radio frequency output signal of final output reaches optimal value.
3) power transistor, arranged in Power Amplifier Unit is operated in linear zone, under different input powers, the output gain of Power Amplifier Unit is all identical, radio-frequency input signals after rising edge and trailing edge are improved is after Power Amplifier Unit, and rising edge and trailing edge remain unchanged.
Accompanying drawing explanation
Fig. 1 is principles of the invention block diagram;
Fig. 2 is the TTL control signal relative position figure with radio-frequency input signals and radio frequency output signal of the present invention;
Fig. 3 is the schematic diagram of the PIN switch element of the present invention;
Fig. 4 is the schematic diagram of the Power Amplifier Unit of the present invention.
In figure, the implication of label symbol is as follows:
10 PIN switch element 20 Power Amplifier Unit
30 IRIG-B code receiver module C1��C16 the first electric capacity��the 16th electric capacity
L1��L2 the first inductance��the second inductance V1 power transistor
V2 PIN diode
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments. Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of protection of the invention.
As shown in Figure 1, a kind of device improving secondary radar pulse signal rising and falling edges, including PIN switch element 10 and Power Amplifier Unit 20, the signal input part of described PIN switch element 10, control end connect radio-frequency input signals, TTL control signal respectively, the signal output part of described PIN switch element 10 connects the signal input part of Power Amplifier Unit 20, the signal output part output radio frequency output signal of described Power Amplifier Unit 20.
As shown in Figure 3, described PIN switch element 10 includes PIN diode V2, the positive terminal of described PIN diode V2 connects the 14th electric capacity C14, one end of first inductance L1, the other end of described 14th electric capacity C14 connects radio-frequency input signals, the other end of the first inductance L1 connects the 15th electric capacity C15, one end of 16th electric capacity C16, and TTL control signal, described 15th electric capacity C15, the equal ground connection of the other end of the 16th electric capacity C16, the negative pole end of described PIN diode V2 connects one end of the second inductance L2, the signal input part of Power Amplifier Unit 20, the other end ground connection of described second inductance L2.
As shown in Figure 4, described Power Amplifier Unit 20 includes power transistor V1, and the grid of described power transistor V1 connects the first electric capacity C1, first resistance R1, 4th electric capacity C4, one end of 5th electric capacity C5, the other end of described first electric capacity C1 connects the negative pole end of PIN diode V2 and one end of the second inductance L2, the other end of described first resistance R1, and the second electric capacity C2, one end of 3rd electric capacity C3 is all connected with the gate input voltage of described power transistor V1, described second electric capacity C2, 3rd electric capacity C3, 4th electric capacity C4, the equal ground connection of the other end of the 5th electric capacity C5, the drain electrode of described power transistor V1 connects the 6th electric capacity C6, 7th electric capacity C7, 8th electric capacity C8, 9th electric capacity C9, tenth electric capacity C10, 11st electric capacity C11, 12nd electric capacity C12, one end of 13rd electric capacity C13, and drain electrode power supply, described 7th electric capacity C7, 8th electric capacity C8, 9th electric capacity C9, tenth electric capacity C10, 11st electric capacity C11, 12nd electric capacity C12, the equal ground connection of the other end of the 13rd electric capacity C13, the other end output radio frequency output signal of described 6th electric capacity C6.
The model of described PIN diode V2 is the MADP-042405-13060 that M/A COM Inc. of the U.S. produces.
The operation principle of described PIN diode V2: the intermediate layer of PIN diode V2 is the I layer close to intrinsic, both sides are heavily doped P+ and N+ layers. Zero, partially or under reverse biased, almost without carrier in I layer, I layer is approximately a fixing small capacitances, and impedance is significantly high, approximate open circuit, when adding radio-frequency input signals on PIN diode V2, very little by the electric current of the radio-frequency input signals of PIN diode V2; When adding forward bias on PIN diode V2, the carrier of PIN diode V2 injects to I layer, along with carrier injects in I layer, in I layer, carrier quantity slowly increases, conduction impedance slowly diminishes, and ducting capacity is being gradually increased, and can slowly be increased by the radio-frequency current of PIN diode; When in I layer, carrier reaches certain value, PIN diode near short circuit, reach maximum by the radio-frequency current of PIN diode.
Described power transistor V1 is the LDMOSRF power transistor of 500W.
When described power transistor V1 is operated in linear zone, the Power Amplifier Unit 20 output gain when different input power is identical, the output of described Power Amplifier Unit 20 is linear with input power, radio-frequency input signals after improvement is after Power Amplifier Unit 20 amplifies, and rising edge and trailing edge remain unchanged. when power transistor V1 is operated in saturation region, the output gain of described Power Amplifier Unit 20 diminishes, and along with the increase of saturation depth, the power gain of power transistor V1 reduces rapidly, owing to the radio-frequency input signals power ratio rf signal pulse middle part power at rising and falling edges place is low, if Power Amplifier Unit 20 is in degree of depth saturated, then at the rising edge of radio-frequency input signals and falling edge, power transistor V1 is in linear zone duty, power gain is higher, at radio-frequency input signals pulse middle part place, power transistor V1 is in degree of depth saturation, power gain is relatively low, radio-frequency input signals after rising edge and trailing edge improvement is after Power Amplifier Unit 20 amplifies, rising and falling edges can diminish, therefore in use, power transistor V1 should be made to be operated in linear zone.
As shown in Figure 1, 2, the ameliorative way of a kind of device improving secondary radar pulse signal rising and falling edges, concrete steps include:
S1, described PIN switch element 10 signal input part receive radio-frequency input signals, the control end input TTL control signal of PIN switch element 10, the input time in the forward position of described radio-frequency input signals is in advance the input time in the forward position of described TTL control signal, and lags behind the input time of the tailing edge of TTL control signal the input time of the tailing edge of radio-frequency input signals;
S2, when described TTL control signal is low level, the PIN diode V2 within PIN switch element 10 is in high-impedance state, described radio-frequency input signals stop by PIN switch element 10;
S3, described TTL control signal forward position arrive time, the ducting capacity of PIN diode V2 is gradually increased, it is gradually increased by the electric current of the radio-frequency input signals of PIN switch element 10, until the electric current of radio-frequency input signals reaches maximum, described radio-frequency input signals be improvement from the time required for the 90% of 10% to the current maxima of current maxima after the rising edge of radio-frequency input signals;
When S4, described TTL control signal are high level, the PIN diode V2 within PIN switch element 10 is in the conduction state, and described radio-frequency input signals passes through PIN switch element 10;
S5, described TTL control signal tailing edge arrive time, the ducting capacity of PIN diode V2 weakens gradually, become minima from maximum gradually by the electric current of the radio-frequency input signals of PIN switch element 10, described radio-frequency input signals be improvement from the time required for the 10% of 90% to the current maxima of current maxima after the trailing edge of radio-frequency input signals;
S6, the power transistor V1 arranged in Power Amplifier Unit 20 are operated in linear zone; The signal output part of described PIN switch element 10 exports the signal input part to Power Amplifier Unit 20 of the radio-frequency input signals after improving, the radio frequency output signal after the signal output part output amplification of described Power Amplifier Unit 20.
The present invention utilizes TTL control signal to control conducting and the cut-off of PIN switch element, improve the rising and falling edges of secondary radar pulse signal, make rising edge and trailing edge meet the index request of 50ns��100ns, be widely used in monopulse secondary radar system regions.
Claims (7)
1. improve the device of secondary radar pulse signal rising and falling edges, it is characterized in that: include PIN switch element (10) and Power Amplifier Unit (20), the signal input part of described PIN switch element (10), control end connect radio-frequency input signals, TTL control signal respectively, the signal output part of described PIN switch element (10) connects the signal input part of Power Amplifier Unit (20), the signal output part output radio frequency output signal of described Power Amplifier Unit (20).
2. improve the device of secondary radar pulse signal rising and falling edges as claimed in claim 1, it is characterized in that: described PIN switch element (10) includes PIN diode (V2), the positive terminal of described PIN diode (V2) connects the 14th electric capacity (C14), one end of first inductance (L1), the other end of described 14th electric capacity (C14) connects radio-frequency input signals, the other end of the first inductance (L1) connects the 15th electric capacity (C15), one end of 16th electric capacity (C16), and TTL control signal, described 15th electric capacity (C15), the equal ground connection of the other end of the 16th electric capacity (C16), the negative pole end of described PIN diode (V2) connects one end of the second inductance (L2), the signal input part of Power Amplifier Unit (20), the other end ground connection of described second inductance (L2).
3. improve the device of secondary radar pulse signal rising and falling edges as claimed in claim 2, it is characterized in that: described Power Amplifier Unit (20) includes power transistor (V1), and the grid of described power transistor (V1) connects the first electric capacity (C1), first resistance (R1), 4th electric capacity (C4), one end of 5th electric capacity (C5), the other end of described first electric capacity (C1) connects the negative pole end of PIN diode (V2) and one end of the second inductance (L2), the other end of described first resistance (R1), and second electric capacity (C2), one end of 3rd electric capacity (C3) is all connected with the gate input voltage of described power transistor (V1), described second electric capacity (C2), 3rd electric capacity (C3), 4th electric capacity (C4), the equal ground connection of the other end of the 5th electric capacity (C5), the drain electrode of described power transistor (V1) connects the 6th electric capacity (C6), 7th electric capacity (C7), 8th electric capacity (C8), 9th electric capacity (C9), tenth electric capacity (C10), 11st electric capacity (C11), 12nd electric capacity (C12), one end of 13rd electric capacity (C13), and drain electrode power supply, described 7th electric capacity (C7), 8th electric capacity (C8), 9th electric capacity (C9), tenth electric capacity (C10), 11st electric capacity (C11), 12nd electric capacity (C12), the equal ground connection of the other end of the 13rd electric capacity (C13), the other end output radio frequency output signal of described 6th electric capacity (C6).
4. improve the device of secondary radar pulse signal rising and falling edges as claimed in claim 2, it is characterised in that: the model of described PIN diode (V2) is the MADP-042405-13060 that M/A COM Inc. of the U.S. produces.
5. improve the device of secondary radar pulse signal rising and falling edges as claimed in claim 3, it is characterised in that: the LDMOSRF power transistor that described power transistor (V1) is 500W.
6. the ameliorative way of the device improving secondary radar pulse signal rising and falling edges as claimed in claim 3, it is characterised in that described ameliorative way concrete steps include:
S1, described PIN switch element (10) signal input part receive radio-frequency input signals, the control end input TTL control signal of PIN switch element (10), the input time in the forward position of described radio-frequency input signals is in advance the input time in the forward position of described TTL control signal, and lags behind the input time of the tailing edge of TTL control signal the input time of the tailing edge of radio-frequency input signals;
S2, when described TTL control signal is low level, the internal PIN diode (V2) of PIN switch element (10) is in cut-off state, and described radio-frequency input signals stops by PIN switch element (10);
S3, described TTL control signal forward position arrive time, the ducting capacity of PIN diode (V2) is gradually increased, it is gradually increased by the electric current of the radio-frequency input signals of PIN switch element (10), until the electric current of radio-frequency input signals reaches maximum, described radio-frequency input signals be improvement from the time required for the 90% of 10% to the current maxima of current maxima after the rising edge of radio-frequency input signals;
When S4, described TTL control signal are high level, the PIN diode (V2) of PIN switch element (10) inside is in the conduction state, and described radio-frequency input signals passes through PIN switch element (10);
S5, described TTL control signal tailing edge arrive time, the ducting capacity of PIN diode (V2) weakens gradually, become minima from maximum gradually by the electric current of the radio-frequency input signals of PIN switch element (10), described radio-frequency input signals be improvement from the time required for the 10% of 90% to the current maxima of current maxima after the trailing edge of radio-frequency input signals;
S6, the power transistor (V1) arranged in Power Amplifier Unit (20) are operated in linear zone; The signal output part of described PIN switch element (10) exports the signal input part to Power Amplifier Unit (20) of the radio-frequency input signals after improving, the radio frequency output signal after the signal output part output amplification of described Power Amplifier Unit (20).
7. the ameliorative way of the device improving secondary radar pulse signal rising and falling edges as claimed in claim 6, it is characterized in that: it is 0.3 �� s that the input time in the forward position of described radio-frequency input signals was shifted to an earlier date the input time in the forward position of described TTL control signal, and the input time lagging behind the tailing edge of TTL control signal the input time of the tailing edge of radio-frequency input signals is 0.3 �� s.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610192117.3A CN105656459B (en) | 2016-03-28 | 2016-03-28 | Improve the device and its ameliorative way of secondary radar pulse signal rising and falling edges |
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| CN201610192117.3A CN105656459B (en) | 2016-03-28 | 2016-03-28 | Improve the device and its ameliorative way of secondary radar pulse signal rising and falling edges |
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| CN105656459B CN105656459B (en) | 2019-09-20 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109995386A (en) * | 2019-03-29 | 2019-07-09 | 成都四威功率电子科技有限公司 | A kind of radiofrequency signal output device |
| CN110247636A (en) * | 2018-03-08 | 2019-09-17 | 海能达通信股份有限公司 | RF power amplification circuit and its output power ON-OFF control circuit, control method |
| CN112039499A (en) * | 2020-08-31 | 2020-12-04 | 中国电子科技集团公司第十四研究所 | Method for improving power amplifier output frequency spectrum purity |
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| US5214315A (en) * | 1991-04-23 | 1993-05-25 | Cornell Research Foundation, Inc. | Nanosecond RF switch driver |
| CN102891665A (en) * | 2012-10-23 | 2013-01-23 | 南京恩瑞特实业有限公司 | Spectrum control method for pulse modulation waveform of full-solid-state emitter |
| CN203800890U (en) * | 2014-05-06 | 2014-08-27 | 杭州士兰微电子股份有限公司 | Power amplifier |
| CN204967784U (en) * | 2015-09-14 | 2016-01-13 | 成都创新达微波电子有限公司 | High -speed PIN switch |
| CN205490460U (en) * | 2016-03-28 | 2016-08-17 | 安徽四创电子股份有限公司 | Improve device of secondary radar pulse signal rising and falling edge |
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| US5214315A (en) * | 1991-04-23 | 1993-05-25 | Cornell Research Foundation, Inc. | Nanosecond RF switch driver |
| CN102891665A (en) * | 2012-10-23 | 2013-01-23 | 南京恩瑞特实业有限公司 | Spectrum control method for pulse modulation waveform of full-solid-state emitter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110247636A (en) * | 2018-03-08 | 2019-09-17 | 海能达通信股份有限公司 | RF power amplification circuit and its output power ON-OFF control circuit, control method |
| CN110247636B (en) * | 2018-03-08 | 2024-02-06 | 海能达通信股份有限公司 | Radio frequency power amplifier circuit, output power switch control circuit and control method thereof |
| CN109995386A (en) * | 2019-03-29 | 2019-07-09 | 成都四威功率电子科技有限公司 | A kind of radiofrequency signal output device |
| CN109995386B (en) * | 2019-03-29 | 2023-09-29 | 成都四威功率电子科技有限公司 | Radio frequency signal output device |
| CN112039499A (en) * | 2020-08-31 | 2020-12-04 | 中国电子科技集团公司第十四研究所 | Method for improving power amplifier output frequency spectrum purity |
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| CN105656459B (en) | 2019-09-20 |
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