CN105656446A - Surface acoustic wave filter and manufacturing method thereof - Google Patents
Surface acoustic wave filter and manufacturing method thereof Download PDFInfo
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- CN105656446A CN105656446A CN201510963300.4A CN201510963300A CN105656446A CN 105656446 A CN105656446 A CN 105656446A CN 201510963300 A CN201510963300 A CN 201510963300A CN 105656446 A CN105656446 A CN 105656446A
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- wave filter
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000011159 matrix material Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 15
- 230000000694 effects Effects 0.000 claims abstract description 7
- 238000010521 absorption reaction Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000009713 electroplating Methods 0.000 claims description 3
- 238000001914 filtration Methods 0.000 abstract description 18
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- PSVBHJWAIYBPRO-UHFFFAOYSA-N lithium;niobium(5+);oxygen(2-) Chemical compound [Li+].[O-2].[O-2].[O-2].[Nb+5] PSVBHJWAIYBPRO-UHFFFAOYSA-N 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6406—Filters characterised by a particular frequency characteristic
- H03H9/6413—SAW comb filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/026—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the tuning fork type
Abstract
The embodiment of the invention discloses a surface acoustic wave filter and a manufacturing method thereof. A surface acoustic wave filter is used for realizing a multi-band bandpass filtering function, which is beneficial for the miniaturization and integration of devices. The method disclosed by the embodiment of the invention comprises the following steps: providing a substrate, wherein the substrate is made of a material having a piezoelectric effect; processing a transmitting interdigital electrode and a receiving interdigital electrode on the substrate; processing a matrix on the surface of the substrate, wherein the matrix is located between the transmitting interdigital electrode and the receiving interdigital electrode; pre-defined processing the matrix to form through holes; and forming scatterers in the through holes to obtain the surface acoustic wave filter, wherein the acoustic impedance of the matrix is larger than that of the scatterer.
Description
Technical field
The present invention relates to field electronic technology field, particularly relate to a kind of Surface Acoustic Wave Filter and making method thereof.
Background technology
Surface Acoustic Wave Filter is a kind of radio-frequency signal filters being usually used in the communication terminals such as mobile phone. As shown in Figure 1, existing Surface Acoustic Wave Filter is generally made up of one pair of interdigital electrode and piezoelectric ceramic piece. After transmitting interdigital electrode adds load signal voltage, forming electric field, make piezoelectric ceramic piece generation mechanical vibration, i.e. surface-duided wave between interdigital electrode, surface-duided wave is propagated to the right, and after receiving by reception interdigital electrode, is converted into electrical signal and exports. Owing to the signal of particular frequency range is only responded by interdigital electrode, bandpass filter therefore can be formed,
But, the logical characteristic of the band of existing Surface Acoustic Wave Filter determines by the geometric parameter of interdigital electrode, owing to particular frequency range can only be responded by the interdigital electrode of particular geometric parameter, so existing Surface Acoustic Wave Filter can only realize simple band-pass filtering function, if realizing the band-pass filtering property of multiband, the combination of multiple Surface Acoustic Wave Filter must be utilized to realize, the device miniaturization and integrated that modern crafts require cannot be met.
Summary of the invention
Embodiments provide a kind of Surface Acoustic Wave Filter and working method thereof, for utilizing single Surface Acoustic Wave Filter wave filter to realize the band-pass filtering function of multiband, be conducive to the miniaturization of device and integrated.
In view of this, first aspect present invention provides the working method of a kind of Surface Acoustic Wave Filter, comprising:
Thering is provided substrate, described substrate is the material with piezoelectric effect;
It is processed to form on the substrate and launches fork finger-type electrode and receive fork finger-type electrode;
Surface working at described substrate forms matrix, and described matrix is between described transmitting fork finger-type electrode and described reception fork finger-type electrode;
Described matrix is carried out predefine processing, forms through hole;
Forming scattering object in described through hole, obtain Surface Acoustic Wave Filter, the specific acoustic resistance of described matrix is greater than the specific acoustic resistance of described scattering object.
In conjunction with first aspect present invention, in first aspect present invention first enforcement mode, described on the substrate be processed to form launch fork finger-type electrode and receive fork finger-type electrode comprise:
Thin metal layer is formed at described substrate surface;
By light etching process, described thin metal layer is processed, formed and launch fork finger-type electrode and receive fork finger-type electrode.
Implement mode in conjunction with first aspect present invention first, in first aspect present invention the 2nd enforcement mode, described by light etching process, described thin metal layer processed, formed after launching fork finger-type electrode and receiving fork finger-type electrode, also comprise:
Border surface at described substrate is processed to form absorption layer.
In conjunction with first aspect present invention, in first aspect present invention the 3rd enforcement mode, the described surface working at described substrate forms matrix and comprises:
Matrix is formed at described substrate surface by electroplating technology.
Implementing mode, first aspect the 2nd enforcement mode or first aspect the 3rd enforcement mode in conjunction with first aspect present invention, first aspect first, in first aspect present invention the 4th enforcement mode, described working method also comprises:
Make input electrode and output electrode on the matrix, described input electrode and described transmitting fork finger-type Electrode connection, described output electrode and described reception fork finger-type Electrode connection.
Second aspect present invention provides a kind of Surface Acoustic Wave Filter, comprising:
Substrate, transmitting fork finger-type electrode, reception fork finger-type electrode, matrix and scattering object, the specific acoustic resistance of described matrix is greater than the specific acoustic resistance of described scattering object;
Described transmitting fork finger-type electrode and described reception fork finger-type electrode are on described substrate;
Described matrix is in described substrate surface, and is between described transmitting fork finger-type electrode and described reception fork finger-type electrode;
Described scattering object has through hole, and described scattering object is in described through hole.
In conjunction with second aspect present invention, in second aspect present invention first enforcement mode, described substrate is the material with piezoelectric effect.
Implementing mode in conjunction with second aspect present invention or second aspect first, in second aspect present invention the 2nd enforcement mode, described Surface Acoustic Wave Filter also comprises:
Input electrode and output electrode;
Described input electrode and described transmitting fork finger-type Electrode connection, described output electrode and described reception fork finger-type Electrode connection.
Implementing mode in conjunction with second aspect present invention or second aspect first, in second aspect present invention the 3rd enforcement mode, described Surface Acoustic Wave Filter also comprises:
Absorption layer, described absorption layer is on the border surface of described substrate.
As can be seen from the above technical solutions, the embodiment of the present invention has the following advantages:
Matrix is in substrate surface and launches fork finger-type electrode and receive between fork finger-type electrode, scattering object is within the through hole of matrix, the specific acoustic resistance of matrix is greater than the specific acoustic resistance of scattering object, obtain according to practical application, the structural performance of matrix and scattering object, the surface-duided wave of specific frequency can be stoped to arrive and to receive fork finger-type electrode, so that receive in the signal of fork finger-type electrode reduction, frequency section corresponding to the surface-duided wave of specific frequency is by filtering, realize the band-pass filtering function of multiband, with prior art utilizes compared with the combination of multiple Surface Acoustic Wave Filter realizes the band-pass filtering function of multiband, reduce volume, be conducive to the miniaturization of device and integrated.
Accompanying drawing explanation
In order to be illustrated more clearly in embodiment of the present invention technical scheme, it is briefly described to the accompanying drawing used required in embodiment and description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural diagrams intention of a kind of Surface Acoustic Wave Filter in prior art;
Fig. 2 is the schematic flow sheet of the working method of Surface Acoustic Wave Filter in the present invention;
Fig. 3 a to Fig. 3 g is the schematic diagram of the course of processing of Surface Acoustic Wave Filter in the present invention;
Fig. 4 is a schematic diagram of the attenuation characteristic of a kind of Surface Acoustic Wave Filter in prior art;
Fig. 5 is a schematic diagram of the attenuation characteristic of Surface Acoustic Wave Filter in the present invention;
Fig. 6 is another schematic diagram of the attenuation characteristic of Surface Acoustic Wave Filter in the present invention.
Embodiment
Embodiments provide a kind of Surface Acoustic Wave Filter and working method thereof, for utilizing single Surface Acoustic Wave Filter wave filter to realize the band-pass filtering function of multiband, be conducive to the miniaturization of device and integrated.
In order to make those skilled in the art understand the present invention program better, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the embodiment of a part of the present invention, instead of whole embodiments. Based on the embodiment in the present invention, those of ordinary skill in the art, not making other embodiments all obtained under creative work prerequisite, should belong to the scope of protection of the invention.
Below by specific embodiment, it is described in detail respectively.
Referring to Fig. 2, the embodiment of the present invention provides the working method of a kind of Surface Acoustic Wave Filter, comprising:
201, substrate is provided;
In the present embodiment, it is provided that substrate 301 as shown in Figure 3 a, the material of substrate 301 is the material with piezoelectric effect, it is possible to be quartz, Lithium niobium trioxide or pricker lead titanate etc.
202, on substrate, it is processed to form transmitting fork finger-type electrode and receives fork finger-type electrode;
In the present embodiment, after substrate 301 surface is carried out polishing, in the surface evaporation layer of metal film of substrate 301, form thin metal layer, by light etching process, thin metal layer is processed, obtain the fork finger-type electrode 302 of transmitting as shown in figure 3b and receive fork finger-type electrode 303.
Optionally, as shown in Figure 3 c, processing on the surface on the border of substrate 301, form absorption layer 304, the material of absorption layer 304 is the material having and absorbing acoustic wave character.
203, at the surface working formation matrix of substrate;
In the present embodiment, as shown in Figure 3 d, forming matrix 305 by electroplating technology in the surface working of substrate 301, matrix 305 is in be launched fork finger-type electrode 302 and receives between fork finger-type electrode 303, the material of matrix 305 is the material that specific acoustic resistance is bigger, such as the metallic substance such as copper or aluminium.
204, matrix is carried out predefine processing, form through hole;
In the present embodiment, as shown in Figure 3 e, matrix 305 carrying out the processing of predefine, the band-pass filtering property namely arrived as required is determined to need the position arranging scattering object and size, is holed by matrix 305 according to position and size, obtains through hole 306.
205, form scattering object in through-holes, obtain Surface Acoustic Wave Filter.
In the present embodiment, as illustrated in figure 3f, in the through hole 306 of matrix 305, scattering object 307 is formed, the material of scattering object 307 is the flexible material that specific acoustic resistance is less, such as rubber or epoxy resin etc., the specific acoustic resistance of matrix 305 is greater than the specific acoustic resistance of scattering object 307, obtains Surface Acoustic Wave Filter.
Optionally, as shown in figure 3g, making input electrode 308 and output electrode 309 on matrix 307, input electrode 308 is connected with transmitting fork finger-type electrode 302, and output electrode 309 is connected with reception fork finger-type electrode 303.
It should be noted that, the shape of through hole 306 and size obtain according to pre-defined, and scattering object 307 is with through hole 306 to mating, and the size of scattering object 307 and shape, be not specifically limited.
It should be noted that, before obtaining Surface Acoustic Wave Filter, carrying out the encapsulation of wave filter, concrete outer enclosure shape does not limit.
In the embodiment of the present invention, matrix 305 is in substrate 301 surface and launches fork finger-type electrode 302 and receive between fork finger-type electrode 303, scattering object 307 is within the through hole 306 of matrix 305, the specific acoustic resistance of matrix 305 is greater than the specific acoustic resistance of scattering object 307, obtain according to practical application, the structural performance of matrix 305 and scattering object 307, the surface-duided wave of specific frequency can be stoped to arrive and to receive fork finger-type electrode 303, so that receive in the signal that fork finger-type electrode 303 reduces, frequency section corresponding to the surface-duided wave of specific frequency is by filtering, realize the band-pass filtering function of multiband, with prior art utilizes compared with the combination of multiple Surface Acoustic Wave Filter realizes the band-pass filtering function of multiband, reduce volume, be conducive to the miniaturization of device and integrated.
Referring to Fig. 3 g, the embodiment of the present invention provides a kind of Surface Acoustic Wave Filter, comprising:
Substrate 301, transmitting fork finger-type electrode 302, reception fork finger-type electrode 303, matrix 305 and scattering object 307, the specific acoustic resistance of matrix 305 is greater than the specific acoustic resistance of scattering object 307;
Launching fork finger-type electrode 302 and receiving fork finger-type electrode 303 is on substrate 301;
Matrix 305 is in substrate 301 surface, and is in transmitting fork finger-type electrode 302 and receives between fork finger-type electrode 303;
Scattering object 307 has through hole 3, and scattering object 307 is in through hole.
Optionally, substrate 301 is for having the material of piezoelectric effect.
Optionally, Surface Acoustic Wave Filter also comprises:
Input electrode 308 and output electrode 309;
Input electrode 308 is connected with transmitting fork finger-type electrode 302, and output electrode 309 is connected with reception fork finger-type electrode 303.
Optionally, Surface Acoustic Wave Filter also comprises:
Absorption layer 304, absorption layer 304 is on the border surface of substrate 301.
In the embodiment of the present invention, matrix 305 is in substrate 301 surface and launches fork finger-type electrode 302 and receive between fork finger-type electrode 303, scattering object 307 is within the through hole 306 of matrix 305, the specific acoustic resistance of matrix 305 is greater than the specific acoustic resistance of scattering object 307, obtain according to practical application, the structural performance of matrix 305 and scattering object 307, the surface-duided wave of specific frequency can be stoped to arrive and to receive fork finger-type electrode 303, so that receive in the signal that fork finger-type electrode 303 reduces, frequency section corresponding to the surface-duided wave of specific frequency is by filtering, realize the band-pass filtering function of multiband, with prior art utilizes compared with the combination of multiple Surface Acoustic Wave Filter realizes the band-pass filtering function of multiband, reduce volume, be conducive to the miniaturization of device and integrated.
For ease of understanding, with an embody rule scene, the Surface Acoustic Wave Filter in the embodiment of the present invention is described in detail below:
In the present embodiment, Surface Acoustic Wave Filter is applied in the communication terminals such as mobile phone, carries out bandpass filtering for radio frequency signal, structure is as shown in figure 3g, wherein the arrangement of scattering object 307 can be periodic, it is also possible to being lack of alignment, in the present embodiment, scattering object 307 arranges in a matrix fashion.
When radiofrequency signal produces, voltage of alternating current is applied in transmitting fork finger-type electrode 302 by input terminus 308 by radiofrequency signal, launch fork finger-type electrode 302 and form electric field in-between the electrodes, make the piezoelectric generation mechanical vibration of substrate 301, form surface-duided wave, the frequency of surface-duided wave is identical with the frequency of radiofrequency signal, surface-duided wave propagates the absorbed of the absorption acoustic wave character of absorbed layer 304 to the left, surface-duided wave is propagated to the right, run into the bigger matrix of specific acoustic resistance 305, the scattering object 307 having specific acoustic resistance less on matrix 305, matrix 305 stops the transmission of surface-duided wave, and the specific acoustic resistance of scattering object 307 is less, surface-duided wave can be allowed to pass through, and produce resonance with surface-duided wave, theoretical according to this, can by regulating the size of scattering object, the characteristic such as shape and material, the surface-duided wave making specific frequency not by, after reception fork finger-type electrode 303 obtains surface-duided wave, it is translated into radiofrequency signal, as shown in Figure 4, pitching the frequency field that finger-type electrode can respond in the radiofrequency signal obtained is f1, stopband is f2 and f3, these two stopbands are produce with one-level resonance by the zero level resonance of scattering object respectively.Fig. 5 is the decay pattern of prior art.
As can be seen here, compared with prior art, Surface Acoustic Wave Filter in the present embodiment is the band-pass filtering property with multifrequency rate, prior art then needs to use multiple Surface Acoustic Wave Filter to carry out combining the band-pass filtering function that could realize multifrequency rate, therefore the embodiment of the present invention can reduce the volume of device, is conducive to the miniaturization of device and integrated.
In addition, as shown in Figure 6, after changing the geometric parameter of scattering object, it is possible to make frequency field f2 and f3 in forbidden band become wider, the attenuation characteristic regulating the size and dimension of scattering object namely can change Surface Acoustic Wave Filter is described; If wishing to produce the frequency field in more forbidden band in f1, then can by changing the design of scattering object, scattering object is made to have two grades of resonant frequencies, also can design multiple scattering object simultaneously, utilize the resonance characteristic of multiple scattering object to produce many stopbands, therefore can realize the Surface Acoustic Wave Filter of polytype customizedization.
The above, above embodiment only in order to the technical scheme of the present invention to be described, is not intended to limit; Although with reference to previous embodiment to invention has been detailed description, it will be understood by those within the art that: the technical scheme described in foregoing embodiments still can be modified by it, or wherein part technology feature is carried out equivalent replacement; And these amendments or replacement, do not make the spirit and scope of the essence disengaging various embodiments of the present invention technical scheme of appropriate technical solution.
Claims (9)
1. the working method of a Surface Acoustic Wave Filter, it is characterised in that, comprising:
Thering is provided substrate, described substrate is the material with piezoelectric effect;
It is processed to form on the substrate and launches fork finger-type electrode and receive fork finger-type electrode;
Surface working at described substrate forms matrix, and described matrix is between described transmitting fork finger-type electrode and described reception fork finger-type electrode;
Described matrix is carried out predefine processing, forms through hole;
Forming scattering object in described through hole, obtain Surface Acoustic Wave Filter, the specific acoustic resistance of described matrix is greater than the specific acoustic resistance of described scattering object.
2. working method according to claim 1, it is characterised in that, described on the substrate be processed to form launch fork finger-type electrode and receive fork finger-type electrode comprise:
Thin metal layer is formed at described substrate surface;
By light etching process, described thin metal layer is processed, formed and launch fork finger-type electrode and receive fork finger-type electrode.
3. the working method requiring described in 2 according to power, it is characterised in that, described by light etching process, described thin metal layer is processed, formed after launching fork finger-type electrode and receiving fork finger-type electrode, also comprise:
Border surface at described substrate is processed to form absorption layer.
4. working method according to claim 1, it is characterised in that, the described surface working at described substrate forms matrix and comprises:
Matrix is formed at described substrate surface by electroplating technology.
5. working method according to any one of claim 1 to 4, it is characterised in that, described working method also comprises:
Make input electrode and output electrode on the matrix, described input electrode and described transmitting fork finger-type Electrode connection, described output electrode and described reception fork finger-type Electrode connection.
6. a Surface Acoustic Wave Filter, it is characterised in that, comprising:
Substrate, transmitting fork finger-type electrode, reception fork finger-type electrode, matrix and scattering object, the specific acoustic resistance of described matrix is greater than the specific acoustic resistance of described scattering object;
Described transmitting fork finger-type electrode and described reception fork finger-type electrode are on described substrate;
Described matrix is in described substrate surface, and is between described transmitting fork finger-type electrode and described reception fork finger-type electrode;
Described scattering object has through hole, and described scattering object is in described through hole.
7. Surface Acoustic Wave Filter according to claim 6, it is characterised in that, described substrate is the material with piezoelectric effect.
8. Surface Acoustic Wave Filter according to claim 6 or 7, it is characterised in that, described Surface Acoustic Wave Filter also comprises:
Input electrode and output electrode;
Described input electrode and described transmitting fork finger-type Electrode connection, described output electrode and described reception fork finger-type Electrode connection.
9. Surface Acoustic Wave Filter according to claim 6 or 7, it is characterised in that, described Surface Acoustic Wave Filter also comprises:
Absorption layer, described absorption layer is on the border surface of described substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510963300.4A CN105656446B (en) | 2015-12-17 | 2015-12-17 | A kind of SAW filter and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510963300.4A CN105656446B (en) | 2015-12-17 | 2015-12-17 | A kind of SAW filter and preparation method thereof |
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| CN105656446A true CN105656446A (en) | 2016-06-08 |
| CN105656446B CN105656446B (en) | 2018-09-04 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108471299A (en) * | 2017-02-23 | 2018-08-31 | 株式会社村田制作所 | The impedance matching methods of multiplexer, sending device, reception device and multiplexer |
| CN109327200A (en) * | 2018-11-27 | 2019-02-12 | 中电科技德清华莹电子有限公司 | A kind of surface acoustic wave resonance Structure Filter |
| CN112688658A (en) * | 2020-12-25 | 2021-04-20 | 济南晶正电子科技有限公司 | Piezoelectric substrate, preparation method and electronic component |
| WO2023108877A1 (en) * | 2021-12-18 | 2023-06-22 | 中国科学院深圳先进技术研究院 | Micron-scale acoustic field generation device based on an artificial structure and preparation method therefor |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112688658A (en) * | 2020-12-25 | 2021-04-20 | 济南晶正电子科技有限公司 | Piezoelectric substrate, preparation method and electronic component |
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| WO2023108877A1 (en) * | 2021-12-18 | 2023-06-22 | 中国科学院深圳先进技术研究院 | Micron-scale acoustic field generation device based on an artificial structure and preparation method therefor |
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| Publication number | Publication date |
|---|---|
| CN105656446B (en) | 2018-09-04 |
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