CN105655425A - 一种基于硅纳米结构的光电转换器件 - Google Patents
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Abstract
本发明公开了一种基于硅纳米线的光电转换器件，包括背电极(6)和P型硅衬底(5)，其特征在于：P型硅衬底(5)的上表面采用硅纳米线阵列结构，该硅纳米线阵列结构表面上依次层叠有i型非晶硅层(4)、N型非晶硅层(3)和氧化铟锡透明导电膜(2)，纳米线阵列结构的顶端设有正电极(1)，其中i型非晶硅层(4)包括多次交替叠加的两种子层：第一高氢气/硅烷比的i型非晶硅子层以及第二低氢气/硅烷比的i型非晶硅子层。本发明由于P型硅衬底表面采用纳米线结构，具有良好的陷光效果，且提高了载流子的收集效率，同时i型非晶硅层为交替叠加的叠置结构，提高了其钝化性能，改善了光电转换器件的能量转化效率。
Description
技术领域
本发明涉及光电转换器件的技术领域，特别是涉及一种基于硅纳米结构的光电转换器件。
背景技术
工业革命以来，随着工业化的发展和进步，对能源的需求也急剧增加，其中石化燃料是最主要的能源材料。然而地球上的石化燃料能源总储藏量有限，且为不可再生能源，因而全球面临着严峻的能源形势。同时石化燃料的使用过程中释放出大量的有毒气体和二氧化碳气体，造成严重的环境污染和温室效应，给人类的生存环境造成了前所未有的巨大灾难。人们已经强烈意识到石化能源的使用所带来的负面影响的严重性。因此“改变能源结构，保护地球”的提议已得到全球各个国家的一致认可。只有可再生能源的大规模利用以替代传统石化能源，才能促进人类社会的可持续发展。由于太阳能丰富且清洁，对广泛的能源相关应用而言，光电转换器件极具吸引力。然而，目前硅基和其他光电转换器件的光电转化效率低，使光电转换器件的成本较高，阻碍了其发展和应用。光电转换器件的光电转化率定义为光电转换器件的电输出与光电转换器件表面区域入射的太阳能之比。在实际光电转换器件的制作中，有很多因素限制着器件的性能，因而在光电转换器件的设计和材料的选择等方面必须考虑这些因素的影响。
为了提高光电转换器件的光电转化率，需要提高光电转换器件的陷光技术。当光经过这些结构时，光束会发生散射，散射光以较大的入射角进入薄膜光电转换器件的吸收层，由于吸收层材料的折射系数通常比周围材质的折射率高，大角散射的光束在吸收层中易于发生全反射。全反射光束在吸收层中来回振荡，直至被吸收层吸收生成光生载流子。这样通过陷光技术，可以有效提高薄膜光电转换器件的光吸收，从而提高其转化效率。
现有的光电转换器件表面的陷光结构通常采用金字塔形结构。而且现有的光电转换器件的结构自上而下为金属电极、ITO氧化铟锡透明导电薄膜、N型非晶硅层、单层本征非晶硅层、P型硅衬底、背电极。衬底表面通过湿法刻蚀，形成拥有金字塔形重复单元的表面，再在其上采用等离子体化学气相淀积PECVD沉积单层本征非晶硅层和N型非晶硅层，形成具有金字塔形陷光结构的光电转换单元。当光入射光电转换器件表面光线会在其表面连续反射，增加光在光电转换器件表面陷光结构中的有效运动长度和反射次数，从而增大能量光电转换单元对光的吸收效率。但是这种结构由于绒面尺寸不均匀且分布较广，使得衬底表面缺陷密度大大增加，在正表面难以获得高质量的绒面陷光，不易降低衬底对光的反射系数，同时单层结构的本征非晶硅层钝化效果较差。
发明内容
因此，本发明的目的在于针对现有技术的不足，提出了一种基于硅纳米线的光电转换器件，以减少光的反射，提高对光子的吸收和利用，同时优化本征非晶硅层的结构，改善光电转换器件的转化效率。
为实现上述目的，本发明提出的一种基于硅纳米线的光电转换器件，包括背电极(6)和P型硅衬底(5)，其特征在于：P型硅衬底(5)的上表面采用硅纳米线阵列结构，该硅纳米线阵列结构表面上依次层叠有i型非晶硅层(4)、N型非晶硅层(3)和氧化铟锡透明导电膜(2)，纳米线阵列结构的顶端设有正电极(1)，其中i型非晶硅(4)包括多次交替叠加的两种子层：第一高氢气/硅烷比的i型非晶硅子层以及第二低氢气/硅烷比的i型非晶硅子层。
作为优选，所述的N型非晶硅层(3)和i型非晶硅层(4)的厚度均为10-50nm。
作为优选，所述的P型硅衬底(5)表面的硅纳米线阵列中，每根硅纳米线的直径为40-80nm，长度为5-10μm。
作为优选，所述的P型硅衬底(5)厚度为200-400μm。
作为优选，所述的正电极(1)采用厚度为20nm/20nm/40nm的Ti/Pd/Ag多层金属材料。
作为优选，所述的背电极(6)采用厚度为70-100nm的金属铝材料。
作为优选，所述的第一高氢气/硅烷比的i型非晶硅子层沉积时的氢气/硅烷比为30-50，所述第一高氢气/硅烷比的i型非晶硅子层厚度为3-6nm。
作为优选，所述的第二低氢气/硅烷比的i型非晶硅子层沉积时的氢气/硅烷比为5-15，所述第二低氢气/硅烷比的i型非晶硅子层厚度为2-4nm。
本发明由于P型硅衬底表面采用纳米线结构，具有良好的陷光效果，且提高了载流子的收集效率，同时i型非晶硅层为交替叠加的叠置结构，提高了其钝化性能，改善了光电转换器件的能量转化效率。
附图说明
图1是本发明的剖面结构示意图。
具体实施方式
参照图1，本发明给出如下三个实施例：
实施例1：
本实例的光电转换器件包括正电极1、氧化铟锡透明导电膜2、N型非晶硅层3、i型非晶硅层4、P型硅衬底5和背电极6，其中背电极6位于P型硅衬底5背面，P型硅衬底5的上表面采用纳米线阵列结构，i型非晶硅层4、N型非晶硅层3和氧化铟锡透明导电膜2依次层叠在该纳米线阵列结构表面，正电极1设置在纳米线阵列结构的顶端。所述正电极1采用厚度为20nm/20nm/40nm的Ti/Pd/Ag多层金属材料；所述N型非晶硅层3与i型非晶硅层4厚度均为10nm；所述硅纳米线阵列中，每根硅纳米线的直径为40nm，长度为5μm；所述P型硅衬底5厚度为200μm；所述背电极6采用厚度为60nm的金属铝材料，其中i型非晶硅(4)包括多次交替叠加的两种子层：第一高氢气/硅烷比的i型非晶硅子层以及第二低氢气/硅烷比的i型非晶硅子层，其中所述第一高氢气/硅烷比的i型非晶硅子层沉积时的氢气/硅烷比为30,所述第一高氢气/硅烷比的i型非晶硅子层的厚度为3nm,所述第二低氢气/硅烷比的i型非晶硅子层沉积时的氢气/硅烷比为5，所述第二低氢气/硅烷比的i型非晶硅子层厚度为2nm。
实施例2：
本实例的光电转换器件结构与实施例1相同，即采用硅纳米线阵列结构的光电转换器件，其参数变化如下：
所述N型非晶硅层3与i型非晶硅层4厚度均为30nm；所述硅纳米线阵列中，每根硅纳米线的直径为60nm，长度为8μm；所述P型硅衬底5厚度为300μm，其中所述第一高氢气/硅烷比的i型非晶硅子层沉积时的氢气/硅烷比为40,所述第一高氢气/硅烷比的i型非晶硅子层的厚度为3nm,所述第二低氢气/硅烷比的i型非晶硅子层沉积时的氢气/硅烷比为15，所述第二低氢气/硅烷比的i型非晶硅子层厚度为4nm。
实施例3：
本实例的光电转换器件结构与实施例1相同，即采用硅纳米线阵列结构的光电转换器件，其参数变化如下：
所述N型非晶硅层3与i型非晶硅层4厚度均为50nm；所述硅纳米线阵列中，每根硅纳米线的直径为80nm，长度为10μm；所述P型硅衬底5厚度为400μm，其中所述第一高氢气/硅烷比的i型非晶硅子层沉积时的氢气/硅烷比为50,所述第一高氢气/硅烷比的i型非晶硅子层的厚度为6nm,所述第二低氢气/硅烷比的i型非晶硅子层沉积时的氢气/硅烷比为10，所述第二低氢气/硅烷比的i型非晶硅子层厚度为3nm。
实施例1-3的光电转换器件的制作方法是：先在P型硅衬底5上表面通过干法刻蚀或湿法刻蚀形成纳米线阵列结构；再在该纳米线阵列结构的表面依次通过PECVD法沉积多次交替叠加的两种子层：第一高氢气/硅烷比的i型非晶硅子层以及第二低氢气/硅烷比的i型非晶硅子层，以形成i型非晶硅层4，然后通过PECVD法沉积形成N型非晶硅层3、通过溅射形成氧化铟锡透明导电膜2；接着在纳米线阵列结构的顶端通过电子束蒸发形成多层金属正电极1；最后在P型硅衬底5背面蒸发金属铝形成背电极6。本发明由于P型硅衬底表面采用纳米线结构，具有良好的陷光效果，且提高了载流子的收集效率，同时i型非晶硅层为交替叠加的叠置结构，提高了其钝化性能，改善了光电转换器件的能量转化效率。
Claims (8)
1.一种基于硅纳米线的光电转换器件，包括背电极(6)和P型硅衬底(5)，其特征在于：P型硅衬底(5)的上表面采用硅纳米线阵列结构，该硅纳米线阵列结构表面上依次层叠有i型非晶硅层(4)、N型非晶硅层(3)和氧化铟锡透明导电膜(2)，纳米线阵列结构的顶端设有正电极(1)，其中i型非晶硅(4)包括多次交替叠加的两种子层：第一高氢气/硅烷比的i型非晶硅子层以及第二低氢气/硅烷比的i型非晶硅子层。
2.根据权利要求1所述的基于硅纳米线的光电转换器件，其特征在于：N型非晶硅层(3)和i型非晶硅层(4)的厚度均为10-50nm。
3.根据权利要求1所述的基于硅纳米线的光电转换器件，其特征在于：P型硅衬底(5)表面的硅纳米线阵列中，每根硅纳米线的直径为40-80nm，长度为5-10μm。
4.根据权利要求1所述的基于硅纳米线的光电转换器件，其特征在于：P型硅衬底(5)厚度为200-400μm。
5.根据权利要求1所述的基于硅纳米线的光电转换器件，其特征在于：正电极(1)采用厚度为20nm/20nm/40nm的Ti/Pd/Ag多层金属材料。
6.根据权利要求1所述的基于硅纳米线的光电转换器件，其特征在于：背电极(6)采用厚度为70-100nm的金属铝材料。
7.根据权利要求1所述的基于硅纳米线的光电转换器件，其特征在于：所述第一高氢气/硅烷比的i型非晶硅子层沉积时的氢气/硅烷比为30-50，所述第一高氢气/硅烷比的i型非晶硅子层厚度为3-6nm。
8.根据权利要求1所述的基于硅纳米线的光电转换器件，其特征在于：所述第二低氢气/硅烷比的i型非晶硅子层沉积时的氢气/硅烷比为5-15，所述第二低氢气/硅烷比的i型非晶硅子层厚度为2-4nm。
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