CN105655412A - Schottky diode - Google Patents
Schottky diode Download PDFInfo
- Publication number
- CN105655412A CN105655412A CN201610189447.7A CN201610189447A CN105655412A CN 105655412 A CN105655412 A CN 105655412A CN 201610189447 A CN201610189447 A CN 201610189447A CN 105655412 A CN105655412 A CN 105655412A
- Authority
- CN
- China
- Prior art keywords
- metal
- cathode
- semiconductor substrate
- type semiconductor
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 4
- 239000011733 molybdenum Substances 0.000 claims abstract description 4
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 4
- 239000007769 metal material Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 238000003466 welding Methods 0.000 abstract description 3
- 239000004576 sand Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
Abstract
The invention provides a Schottky diode which comprises anode metal, an N epitaxial layer, an N-type semiconductor substrate, an N cathode layer, cathode metal and three pins. The anode metal is arranged at the top, the N epitaxial layer is arranged below the anode metal and connected with the same, the N-type semiconductor substrate is arranged below the N epitaxial layer and connected with the same, the N cathode layer is arranged below the N-type semiconductor substrate and connected with the same, the cathode metal is arranged below the N cathode layer and connected with the same, the three pins are arranged on the cathode metal and include an anode pin in the middle and cathode pins on two sides, the anode metal is molybdenum, each of the N epitaxial layer, the N-type semiconductor substrate and the N cathode layer is a silicon wafer, silica oxidized insulating layers are arranged on two sides of the anode metal, and a limiting block is arranged on the anode pin and the cathode pins. The Schottky diode has the advantages that the pins are less prone to being bent or broken, less prone to being inserted too deeply when being embedded and free of causing instability in welding.
Description
Technical field
The present invention relates to a kind of Schottky diode, belong to technical field of semiconductors.
Background technology
Diode is in the middle of electronic component, a kind of device with two electrodes, only allows electric current to be flow through by single direction, and many uses are the functions applying its rectification. Varactor (VaricapDiode) is then used for being used as the adjustable condenser of electronic type. The major part sense of current that possesses of diode we be normally referred to as " rectification (Rectifying) " function. The most common function of diode only allows electric current by single direction by (being called forward bias voltage drop) exactly, blocks (being called reverse bias) time reverse. Therefore, diode can be thought of as the non-return valve of electronic edition.
Diode kind has a lot, according to semi-conducting material used, can be divided into germanium diode (Ge pipe) and silicon diode (Si pipe). According to its different purposes, detector diode, commutation diode, Zener diode, switching diode, isolating diode, Schottky diode, light emitting diode, silicon switch diode, rotating diode etc. can be divided into. According to tube core structure, point-contact diode, face contact diode and planar diode can be divided into again.
There is following weak point in existing diode:
1) pin is easily bent over or fractures;
2) pin easily inserted when inlaying deeply, caused welding built on the sand.
These weak points have all had a strong impact on the service life of diode.
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art part, it is provided that a kind of Schottky diode.
The Schottky diode of the present invention, including being located at top anode metal, it is located at the N epitaxial layer being connected below anode metal and with anode metal, it is located at the N-type semiconductor substrate being connected below N epitaxial layer and with N epitaxial layer, it is located at the N cathode layer being connected below N-type semiconductor substrate and with N-type semiconductor substrate, it is located at the cathodic metal being connected below N cathode layer and with N cathode layer, it is located at three pins of cathodic metal, centre is anode pin, both sides are negative electrode pins, described anode metal material is molybdenum, described N epitaxial layer, N-type semiconductor substrate and N cathode layer are silicon chip, described anode metal both sides are provided with silicon dioxide oxidation insulating layer, described anode pin and negative electrode pin are provided with limited block.
Preferably,
Described anode pin and negative electrode pin all adopt diode fully automatic forming machine to prepare.
The Schottky diode of the present invention, has the following technical effect that
1) pin is not easy to be bent over or fracture;
2) pin was not easily pluggable into when inlaying deeply, was not result in welding built on the sand.
Detailed description of the invention
The Schottky diode of the present invention, including being located at top anode metal, it is located at the N epitaxial layer being connected below anode metal and with anode metal, it is located at the N-type semiconductor substrate being connected below N epitaxial layer and with N epitaxial layer, it is located at the N cathode layer being connected below N-type semiconductor substrate and with N-type semiconductor substrate, it is located at the cathodic metal being connected below N cathode layer and with N cathode layer, it is located at three pins of cathodic metal, centre is anode pin, both sides are negative electrode pins, described anode metal material is molybdenum, described N epitaxial layer, N-type semiconductor substrate and N cathode layer are silicon chip, described anode metal both sides are provided with silicon dioxide oxidation insulating layer, described anode pin and negative electrode pin are provided with limited block. described anode pin and negative electrode pin all adopt diode fully automatic forming machine to prepare.
Claims (2)
1. a Schottky diode, it is characterized in that, including being located at top anode metal, it is located at the N epitaxial layer being connected below anode metal and with anode metal, it is located at the N-type semiconductor substrate being connected below N epitaxial layer and with N epitaxial layer, it is located at the N cathode layer being connected below N-type semiconductor substrate and with N-type semiconductor substrate, it is located at the cathodic metal being connected below N cathode layer and with N cathode layer, it is located at three pins of cathodic metal, centre is anode pin, both sides are negative electrode pins, described anode metal material is molybdenum, described N epitaxial layer, N-type semiconductor substrate and N cathode layer are silicon chip, described anode metal both sides are provided with silicon dioxide oxidation insulating layer, described anode pin and negative electrode pin are provided with limited block.
2. Schottky diode according to claim 1, it is characterised in that described anode pin and negative electrode pin all adopt diode fully automatic forming machine to prepare.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610189447.7A CN105655412A (en) | 2016-03-30 | 2016-03-30 | Schottky diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610189447.7A CN105655412A (en) | 2016-03-30 | 2016-03-30 | Schottky diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105655412A true CN105655412A (en) | 2016-06-08 |
Family
ID=56495810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610189447.7A Pending CN105655412A (en) | 2016-03-30 | 2016-03-30 | Schottky diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105655412A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129128A (en) * | 2016-08-17 | 2016-11-16 | 南通明芯微电子有限公司 | A kind of phototriode |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5814874A (en) * | 1995-07-21 | 1998-09-29 | General Semiconductor Ireland | Semiconductor device having a shorter switching time with low forward voltage |
| CN1708850A (en) * | 2002-11-06 | 2005-12-14 | 国际整流器公司 | Chip-scale schottky device |
| CN105006491A (en) * | 2015-08-07 | 2015-10-28 | 南通明芯微电子有限公司 | Point contact type rectifier diode |
| CN105023955A (en) * | 2015-08-07 | 2015-11-04 | 南通明芯微电子有限公司 | Planar rectification diode |
-
2016
- 2016-03-30 CN CN201610189447.7A patent/CN105655412A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5814874A (en) * | 1995-07-21 | 1998-09-29 | General Semiconductor Ireland | Semiconductor device having a shorter switching time with low forward voltage |
| CN1708850A (en) * | 2002-11-06 | 2005-12-14 | 国际整流器公司 | Chip-scale schottky device |
| CN105006491A (en) * | 2015-08-07 | 2015-10-28 | 南通明芯微电子有限公司 | Point contact type rectifier diode |
| CN105023955A (en) * | 2015-08-07 | 2015-11-04 | 南通明芯微电子有限公司 | Planar rectification diode |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129128A (en) * | 2016-08-17 | 2016-11-16 | 南通明芯微电子有限公司 | A kind of phototriode |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 226600, Jiangsu province Nantong city Haian county old dam Town Industrial Park Applicant after: Jiangsu Ming core microelectronic Limited by Share Ltd Address before: 226600 Jiangsu city of Nantong province Haian County Binhai port old dam old dam District Town Industrial Park Applicant before: Nantong Mingxin Microelectronics Co., Ltd. |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160608 |