CN105652175B - A kind of difference fluctuation source influences device electrology characteristic the extracting method of amplitude - Google Patents

A kind of difference fluctuation source influences device electrology characteristic the extracting method of amplitude Download PDF

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Publication number
CN105652175B
CN105652175B CN201610014931.6A CN201610014931A CN105652175B CN 105652175 B CN105652175 B CN 105652175B CN 201610014931 A CN201610014931 A CN 201610014931A CN 105652175 B CN105652175 B CN 105652175B
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amplitude
fluctuation
threshold voltage
curve
extracting method
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CN105652175A (en
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王润声
蒋晓波
黄如
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Peking University
Semiconductor Manufacturing International Shanghai Corp
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Peking University
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices

Abstract

The invention discloses the extracting methods that a kind of different fluctuation sources influence device electrology characteristic amplitude, belong to field of microelectronic devices.The extracting method utilizes the transfer curve I of each deviced‑Vg, extracted from curve and obtain the threshold voltage V of each devicethWith subthreshold amplitude of oscillation SS；To the device threshold voltage V caused by different fluctuation the source LER and WFV after being detachedthThe size of fluctuation.It using the present invention may be implemented that fluctuation source influence amplitude is assessed and compared, a good direction provided for process optimization.

Description

A kind of difference fluctuation source influences device electrology characteristic the extracting method of amplitude
Technical field
The invention belongs to field of microelectronic devices, it is related in semiconductor devices different fluctuation sources to device electrology characteristic shadow The extracting method of the amplitude of sound.
Background technology
With being gradually reduced for semiconductor devices scale, in device the influence of random fluctuation becoming not allowing increasingly to neglect Depending on.The random fluctuation of device is due to that in device fabrication process, caused by inevitable technique uncertainty, can lead to device Electrology characteristic, for example, threshold voltage fluctuation.Currently, generally believing that the main random fluctuation source in semiconductor devices is metal work( Function (WFV) fluctuation and line edge roughness (LER) fluctuation.Wherein, metal work function fluctuation is due to the not isomorphous in grid metal Caused by the work function difference of intergranular.And line edge roughness, then it is the process fluctuation in photoetching and etching prepared by device, institute Caused by the lines that finally carve with caused by the difference of ideal lines.Therefore, both random fluctuation sources have different Technique source.
Since both fluctuation sources simultaneously work to the electrology characteristic of device, at present not from device electrology characteristic angle Degree, distinguishing the fluctuation source of two kinds of ingredients influences.However, for the angle of process optimization, one, from device level on, is determined Amount ground influences the method that amplitude is assessed and compared to fluctuation source to be necessary, and one can be provided for process optimization Good direction.
Invention content
The purpose of the present invention is to provide one kind from device level, and influence caused by different fluctuation sources is detached Extracting method.
Technical solution provided by the invention is as follows：
A kind of difference fluctuation source influences device electrology characteristic the extracting method of amplitude, includes the following steps：
1) the transfer curve I of each device is measuredd-Vg, extracted from curve and obtain the threshold voltage V of each devicethWith Subthreshold amplitude of oscillation SS；
2) V is calculatedthWith the variances sigma of SS2(Vth)、σ2(SS) and VthWith the covariance Σ of SS；
From physical mechanism, metal work function fluctuation WFV only influences the V of deviceth, the subthreshold amplitude of oscillation of device is not influenced SS, and line edge roughness fluctuation LER can influence V simultaneouslythAnd SS, and the linear dependence of the two, and WFV and LER It influences independent mutually.That is threshold voltage fluctuation δ V caused by WFV and LER differenceth,WFV, δ Vth,LER, and SS fluctuations δ caused by LER SSLERMeet following relational expression：
Vth=Vth,0+δVth,WFV+δVth,LER
SS=SS0+k·δVth,LER
It is hereby achieved that covariance is Σ=k σ2(δVth,LER)。
Wherein, k is constant, δ VthFor actually measured V in 1)thFluctuation, Vth,0And SS0(there is no fluctuation for perfect condition Source influence) threshold voltage and the subthreshold amplitude of oscillation.By formulaThe value of coefficient k is calculated；
3) by formulaThreshold voltage fluctuation amplitude σ (δ V caused by obtaining LERth,LER)；
The device threshold voltage V caused by different fluctuation source LER and WFV after the present invention is just detached as a result,thRise The size fallen.
Description of the drawings
Fig. 1 (a) is the schematic diagram of metal work function fluctuation；
Fig. 1 (b) is the schematic diagram of line edge roughness fluctuation；
Fig. 2 is threshold voltage fluctuation amplitude schematic diagram caused by the present invention obtains different fluctuation sources；
Fig. 3 is the I of different componentsd-VgCurve；
Fig. 4 is the threshold voltage V of device of the embodiment of the present inventionthWith subthreshold swing SS；
Fig. 5 is the result of extraction of the embodiment of the present invention compared with the influence amplitude in the single fluctuation sources emulated TCAD Figure.
Specific implementation method
Method of the invention will be elaborated by example with reference below.
This example considers the double grid type fin FET based on SOI substrate, in order to verify the accurate of extracting method Property, the I obtained using TCAD device simulationsd-VgCurve obtains I to replace really measuringd-VgCurve.Practical application this method When, it should use and really measure obtained transfer curve Id-Vg。
Metal work function fluctuation and line edge roughness fluctuation are as shown schematically in fig. 1.Whole extraction flow, such as Fig. 2 It is shown.
Specific implementation step：
The first step, according to the I of different componentsd-VgCurve (Fig. 3), extraction obtain the threshold voltage V of each devicethWith Subthreshold swing SS (Fig. 4)；
Second step, the threshold voltage V obtained according to extractionthWith subthreshold swing SS, the variance and association of the two is calculated Variance ∑ is：
σ2(Vth)=666mV2
σ2(SS)=14.5 (mV/dec)2
(the mV of Σ=- 78.42/dec)
Third walks, and according to the covariance ∑ of previous step, parameter is calculated
4th step, by formulaObtain the threshold value electricity caused by line edge roughness fluctuation LER Press VthFluctuation amplitude be σ (δ Vth,LER)=20.6mV；
The explanation of the embodiment of the present invention is presented above for understanding the present invention.It should be understood that the present invention is not limited to here The specific embodiment of description, but as now for a person skilled in the art it is apparent that can carry out various modifications, adjust and Replacement is made without departing from the scope of the present invention.Therefore, claim below is intended to cover the connotation and model fallen in the present invention Enclose interior such modifications and variations.

Claims (2)

1. a kind of difference fluctuation source influences device electrology characteristic the extracting method of amplitude, which is characterized in that including：
1) the transfer curve I of measurement deviced-Vg, extracted from curve and obtain the threshold voltage V of devicethWith subthreshold amplitude of oscillation SS；
2) V is calculatedthWith the variances sigma of SS2(Vth)、σ2(SS) and VthWith the covariance Σ of SS；
3) by formulaThreshold voltage fluctuation amplitude σ (δ V caused by obtaining LERth,LER), wherein k is Constant, by formulaThe value of coefficient k is calculated；
4) by formulaObtain metal work function fluctuation WFV Caused by threshold voltage fluctuation amplitude σ (δ Vth,WFV)。
2. difference fluctuation source as described in claim 1 influences device electrology characteristic the extracting method of amplitude, which is characterized in that For the double grid type fin FET of SOI substrate, the I obtained using TCAD device simulationsd-VgCurve is true to replace Measurement obtains Id-VgCurve.
CN201610014931.6A 2016-01-11 2016-01-11 A kind of difference fluctuation source influences device electrology characteristic the extracting method of amplitude Active CN105652175B (en)

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Citations (2)

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CN104122491A (en) * 2014-07-24 2014-10-29 北京大学 Method for predicting negative bias temperature instability (NBTI) dynamic variation at the end of service life of semiconductor device

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CN103675637A (en) * 2013-11-14 2014-03-26 南京航空航天大学 Power MOSFET health state assessment and residual life prediction method
CN104122491A (en) * 2014-07-24 2014-10-29 北京大学 Method for predicting negative bias temperature instability (NBTI) dynamic variation at the end of service life of semiconductor device

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Investigations on Line-Edge Roughness(LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology:Part I-Modeling and Simulation Method;Xiaobo Jiang et.al;《IEEE TRANSACTIONS ON ELECTRON DEVICES》;20131130;第60卷(第11期);第3699-3675页 *
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