CN105645413B - A kind of silicon ball preparation method of spherical silicon solar cell - Google Patents
A kind of silicon ball preparation method of spherical silicon solar cell Download PDFInfo
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- CN105645413B CN105645413B CN201610211182.6A CN201610211182A CN105645413B CN 105645413 B CN105645413 B CN 105645413B CN 201610211182 A CN201610211182 A CN 201610211182A CN 105645413 B CN105645413 B CN 105645413B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 107
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 107
- 239000010703 silicon Substances 0.000 title claims abstract description 107
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000013078 crystal Substances 0.000 claims abstract description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 26
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000004411 aluminium Substances 0.000 claims abstract description 17
- 229910052786 argon Inorganic materials 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims abstract description 11
- 239000000155 melt Substances 0.000 claims abstract description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 238000005275 alloying Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 6
- 238000005520 cutting process Methods 0.000 abstract description 5
- 239000002994 raw material Substances 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000000227 grinding Methods 0.000 abstract description 4
- 239000002210 silicon-based material Substances 0.000 abstract description 4
- 239000002699 waste material Substances 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 3
- 230000006911 nucleation Effects 0.000 abstract description 3
- 238000010899 nucleation Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 235000010210 aluminium Nutrition 0.000 description 20
- 230000006872 improvement Effects 0.000 description 8
- 238000005266 casting Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910018030 Cu2Te Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 208000019155 Radiation injury Diseases 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Silicon Compounds (AREA)
Abstract
The invention discloses a kind of silicon ball preparation method of spherical silicon solar cell, comprise the following steps:Step 1：P-type silicon crystal grain is put into crucible；Step 2：1,420 1450 DEG C are heated to crucible, melts P-type silicon crystal grain；Step 3：110 130Kpa are forced into crucible using argon gas；Step 4：P-type silicon crystal grain molten liquid after pressurization generates silicon ball after the nozzle of crucible；Step 5：Silicon ball freely falls the soft aluminium sheet of tower bottom freely falling tower and fall to after nozzle, accepts silicon ball by soft aluminium sheet so as to complete the preparation of silicon ball.The beneficial effects of the invention are as follows silicon ball used in spherical silicon solar cell, is directly dripped by the silicon raw material melted, and homogeneous nucleation is carried out under no impurity component, produces the polycrystalline silicon ball of 0.9 1.1 millimeters of diameter.This technology will not cause silicon materials to waste because of cutting and grinding processing procedure, have efficient stock utilization, can effectively reduce cost.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly to a kind of silicon ball preparation side of spherical silicon solar cell
Method.
Background technology
Solar cell is that one kind effectively absorbs solar radiant energy, and electric energy is converted optical energy into using photovoltaic effect
Device, when solar irradiation is in semiconductor P-N junction (P-N Junction), form new electron-hole pair (V-E pair),
Under the action of P-N junction electric field, hole flows to P areas by N areas, and electronics flows to N areas by P areas, and electric current is just formed after connecting circuit.By
Solar energy is then converted into the solid semiconductor device of electric energy using the photovoltaic effect of various potential barriers, therefore the also known as sun
Energy battery or photovoltaic cell, are the significant components of solar array power-supply system.Solar cell mainly has crystal silicon (Si) electricity
Pond, three-five semi-conductor cell (GaAs, Cds/Cu2S, Cds/CdTe, Cds/InP, CdTe/Cu2Te), no machine battery are organic
Battery etc., wherein crystal silicon solar batteries occupy market mainstream leading position.The basic material of crystal silicon solar batteries reaches for purity
99.9999%th, p type single crystal silicon of the resistivity more than 10 Ω-cm, including front matte, front p-n junction, front surface antireflection film,
The parts such as positive backplate.Added printing opacity cover plate (such as high transparent glass and EVA) to protect by plane of illumination for front in component package, prevented
Radiation injury of the battery by high energy electron and proton in the Van Allen belt of outer space.
Silicon ball used in existing spherical silicon solar cell is using typical silicon ingot casting, it is necessary to by cutting and grind
Journey is ground, cutting and grinding processing procedure can cause silicon materials to waste, and there are silicon raw material utilization rate and low production efficiency, of high cost lacks
Point.
The content of the invention
The technical problems to be solved by the invention are, there is provided a kind of stock utilization that can effectively improve silicon raw material, life
Produce the efficient and spherical silicon solar cell of cost reduction silicon ball preparation method.
In order to solve the above technical problem, the present invention provides a kind of silicon ball preparation method of spherical silicon solar cell,
Comprise the following steps：Step 1：P-type silicon crystal grain is put into crucible；Step 2：1420-1450 DEG C is heated to crucible, makes P
Type silicon crystal grain melts；Step 3：110-130Kpa is forced into crucible using argon gas；Step 4：P-type silicon crystal grain after pressurization melts
Melt liquid and silicon ball is generated after the nozzle of crucible；Step 5：Silicon ball is freely fallen freely falling tower and fall to after nozzle
The soft aluminium sheet of tower bottom, accepts silicon ball so as to complete the preparation of silicon ball by soft aluminium sheet.
As the improvement of such scheme, the nozzle diameter of the crucible is 0.3-0.4 millimeters.
As the improvement of such scheme, the silicon ball of the solar cell is 0.9-1.1 millimeters a diameter of.
As the improvement of such scheme, the height for freely falling tower is 11.5 meters.
As the improvement of such scheme, crucible described in the step 1 is silicon nitride surface coating quartz crucible, the P
Type silicon crystal grain is doping boron atom, and 2.32-2.34 grams of density is per cubic centimeter, the polysilicon grain that 1410 DEG C of fusing point.
As the improvement of such scheme, crucible described in the step 2 is heated using electrothermal alloy heater, is closed
Golden component is Cr-Al-Fe-Ni, 1.45 ohms per square millimeter (ohm/mm of resistivity2), 7.1 grams of density is per cubic centimeter.
As the improvement of such scheme, the flow of argon gas described in the step 3 is 4.5-10slm.
As the improvement of such scheme, the material of nozzle is super pure silica in the step 4, SiO2>=99.98%,
Fe2O3<2.0×10-4%, Cr<0.5×10-4%.
As the improvement of such scheme, soft aluminium sheet described in the step 6 is aluminum content>99.60% 1060 fine aluminiums
Plate.
Compared with prior art, the present invention has the advantages that：Silicon ball used in spherical silicon solar cell, is
Directly dripped by the silicon raw material melted, homogeneous nucleation is carried out under no impurity component, produce the polycrystalline of 0.9-1.1 millimeters of diameter
Silicon ball, general silicon ball falling speed are 5.5-6.5m/s, reach bottom when temperature be about 950-1050 DEG C, due to silicon more than
800 DEG C have elasticity, so reaching the silicon ball of bottom will not rupture or deform, using falling the crystal grain-growth speed of technology law about
1mm/s, than about 100 times and will not be because of cutting and grinding processing procedure cause silicon materials soon of typical silicon ingot casting speed 2mm/min
Waste, there is efficient stock utilization, production efficiency height, the advantages of can effectively reducing cost.
Brief description of the drawings
Fig. 1 is silicon ball preparation method process flow chart of the present invention.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made into one below in conjunction with attached drawing
It is described in detail on step ground.
Embodiment 1
A kind of silicon ball preparation method of spherical silicon solar cell, comprises the following steps：
Step 1：P-type silicon crystal grain is put into crucible；The crucible is silicon nitride surface coating quartz crucible, the p-type
Silicon crystal grain is doping boron atom, and density is per cubic centimeter for 2.32-2.34 grams, and fusing point is 1410 DEG C of polysilicon grain.
Step 2：1420 DEG C are heated to crucible, melts P-type silicon crystal grain；Crucible is added using electrothermal alloy heater
Heat, alloying component Cr-Al-Fe-Ni, 1.45 ohms per square millimeter of resistivity, 7.1 grams of density are per cubic centimeter.
Step 3：110Kpa is forced into crucible using argon gas；For 4.5slm, (slm refers to standard per minute to the flow of argon gas
Rise).
Step 4：P-type silicon crystal grain molten liquid after pressurization generates silicon ball after the nozzle of crucible；The nozzle diameter of crucible
For 0.3-0.4 millimeters, a diameter of 0.9-1.1 millimeters of the silicon ball of generation.The material of nozzle is super pure silica, SiO2≥
99.98%, Fe2O3<2.0×10-4%, Cr<0.5×10-4%.
Step 5：Silicon ball freely falls the soft aluminium sheet of tower bottom freely falling tower and fall to after nozzle, by soft
Aluminium sheet accepts silicon ball so as to complete the preparation of silicon ball.The height for freely falling tower is 11.5 meters.The soft aluminium sheet is aluminum content>
99.60% 1060 pure aluminum plates.
Embodiment 2
A kind of silicon ball preparation method of spherical silicon solar cell, comprises the following steps：
Step 1：P-type silicon crystal grain is put into crucible；The crucible is silicon nitride surface coating quartz crucible, the p-type
Silicon crystal grain is doping boron atom, and density is per cubic centimeter for 2.32-2.34 grams, and fusing point is 1410 DEG C of polysilicon grain.
Step 2：1435 DEG C are heated to crucible, melts P-type silicon crystal grain；Crucible is added using electrothermal alloy heater
Heat, alloying component Cr-Al-Fe-Ni, 1.45 ohms per square millimeter of resistivity, 7.1 grams of density are per cubic centimeter.
Step 3：120Kpa is forced into crucible using argon gas；For 7.5slm, (slm refers to standard per minute to the flow of argon gas
Rise).
Step 4：P-type silicon crystal grain molten liquid after pressurization generates silicon ball after the nozzle of crucible；The nozzle diameter of crucible
For 0.3-0.4 millimeters, a diameter of 0.9-1.1 millimeters of the silicon ball of generation.The material of nozzle is super pure silica, SiO2≥
99.98%, Fe2O3<2.0×10-4%, Cr<0.5×10-4%.
Step 5：Silicon ball freely falls the soft aluminium sheet of tower bottom freely falling tower and fall to after nozzle, by soft
Aluminium sheet accepts silicon ball so as to complete the preparation of silicon ball.The height for freely falling tower is 11.5 meters.The soft aluminium sheet is aluminum content>
99.60% 1060 pure aluminum plates.
Embodiment 3
A kind of silicon ball preparation method of spherical silicon solar cell, comprises the following steps：
Step 1：P-type silicon crystal grain is put into crucible；The crucible is silicon nitride surface coating quartz crucible, the p-type
Silicon crystal grain is doping boron atom, and density is per cubic centimeter for 2.32-2.34 grams, and fusing point is 1410 DEG C of polysilicon grain.
Step 2：1450 DEG C are heated to crucible, melts P-type silicon crystal grain；Crucible is added using electrothermal alloy heater
Heat, alloying component Cr-Al-Fe-Ni, 1.45 ohms per square millimeter of resistivity, 7.1 grams of density are per cubic centimeter.
Step 3：130Kpa is forced into crucible using argon gas；For 10slm, (slm refers to standard per minute to the flow of argon gas
Rise).
Step 4：P-type silicon crystal grain molten liquid after pressurization generates silicon ball after the nozzle of crucible；The nozzle diameter of crucible
For 0.3-0.4 millimeters, a diameter of 0.9-1.1 millimeters of the silicon ball of generation.The material of nozzle is super pure silica, SiO2≥
99.98%, Fe2O3<2.0×10-4%, Cr<0.5×10-4%.
Step 5：Silicon ball freely falls the soft aluminium sheet of tower bottom freely falling tower and fall to after nozzle, by soft
Aluminium sheet accepts silicon ball so as to complete the preparation of silicon ball.The height for freely falling tower is 11.5 meters.The soft aluminium sheet is aluminum content>
99.60% 1060 pure aluminum plates.
Compared with prior art, the present invention has the advantages that：Silicon ball used in spherical silicon solar cell, is
Directly dripped by the silicon raw material melted, homogeneous nucleation is carried out under no impurity component, produce the polysilicon of diameter 0.9-1.1
Ball, general silicon ball falling speed are 5.5-6.5m/s, and temperature is about 950-1050 DEG C when reaching bottom, since silicon is more than 800
DEG C there is elasticity, so reaching the silicon ball of bottom will not rupture or deform, using falling the crystal grain-growth speed of technology law about
1mm/s, than about 100 times and will not be because of cutting and grinding processing procedure cause silicon materials soon of typical silicon ingot casting speed 2mm/min
Waste, there is efficient stock utilization, production efficiency height, the advantages of can effectively reducing cost.
The above disclosed power for being only a kind of preferred embodiment of the present invention, the present invention cannot being limited with this certainly
Sharp scope, therefore equivalent variations made according to the claims of the present invention, are still within the scope of the present invention.
Claims (5)
1. a kind of silicon ball preparation method of spherical silicon solar cell, it is characterised in that comprise the following steps：
Step 1：P-type silicon crystal grain is put into crucible；Wherein described crucible is silicon nitride surface coating quartz crucible, the p-type
Silicon crystal grain is doping boron atom, and 2.32-2.34 grams of density is per cubic centimeter, the polysilicon grain that 1410 DEG C of fusing point；
Step 2：1420-1450 DEG C is heated to crucible, melts P-type silicon crystal grain；
Step 3：110-130Kpa is forced into crucible using argon gas；
Step 4：P-type silicon crystal grain molten liquid after pressurization generates silicon ball after the nozzle of crucible；The wherein nozzle diameter of crucible
For 0.3-0.4 millimeters, material is super pure silica, SiO2>=99.98%, Fe2O3<2.0×10-4%, Cr<0.5×10-4%；
Step 5：Silicon ball freely falls the soft aluminium sheet of tower bottom freely falling tower and fall to after nozzle, by soft aluminium
Plate accepts silicon ball so as to complete the preparation of silicon ball, wherein the height for freely falling tower is 11.5 meters.
A kind of 2. silicon ball preparation method of spherical silicon solar cell as claimed in claim 1, it is characterised in that the solar energy
The silicon ball of battery is 0.9-1.1 millimeters a diameter of.
A kind of 3. silicon ball preparation method of spherical silicon solar cell as claimed in claim 1, it is characterised in that the step 2
Described in crucible heated using electrothermal alloy heater, alloying component Cr-Al-Fe-Ni, 1.45 ohm of resistivity is often put down
Square millimeter, 7.1 grams of density are per cubic centimeter.
A kind of 4. silicon ball preparation method of spherical silicon solar cell as claimed in claim 1, it is characterised in that the step 3
Described in the flow of argon gas be 4.5-10slm.
A kind of 5. silicon ball preparation method of spherical silicon solar cell as claimed in claim 1, it is characterised in that the step 5
Described in soft aluminium sheet be aluminum content>99.60% 1060 pure aluminum plates.
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Address after: 528100 No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong. Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100 No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong. Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
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