CN105633302B - A kind of preparation method and application of graphical organic function layer - Google Patents
A kind of preparation method and application of graphical organic function layer Download PDFInfo
- Publication number
- CN105633302B CN105633302B CN201511017656.5A CN201511017656A CN105633302B CN 105633302 B CN105633302 B CN 105633302B CN 201511017656 A CN201511017656 A CN 201511017656A CN 105633302 B CN105633302 B CN 105633302B
- Authority
- CN
- China
- Prior art keywords
- layer
- organic function
- protective layer
- preparation
- graphical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/10—Triplet emission
Abstract
A kind of preparation method for graphical organic function layer that the present invention is provided, comprises the following steps：The organic function layer that superposition is set, the first protective layer and the second protective layer are sequentially formed on base material, the protective layer of etch away sections second makes part first protective layer exposed；Exposed second protective layer is set to distil, so that the organic function layer is exposed；After substrate and base material contraposition, then being placed in hot environment makes exposed organic function layer be transferred on the substrate.The method that the present invention is provided does not need accurate mask plate when preparing the luminescent layer in high-resolution OLED, so as to reduce production cost and improve yield.
Description
Technical field
The invention belongs to organic electroluminescence device technical field, and in particular to a kind of preparation of graphical organic function layer
Method and the high-resolution OLED prepared using this method.
Background technology
Organnic electroluminescent device OLED generally comprise hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and
Electron injecting layer, the luminescent layer of current Full-color OLED needs that accurate mask plate Fine Metal Mask (FMM) are used for multiple times to steam
Plating.
Due to accurate mask plate FMM materials in itself and manufacture craft, high-resolution organic electroluminescent dress is limited
The development put.During evaporation process, mask plate is changed every time and is required to itself and substrate exactitude position to be deposited, but right
Precision mask plate FMM can often occur off normal, twine the phenomenons such as silk to cause product the defects such as variegation, colour mixture occur during position, reduce
Yield.In addition, precision mask plate FMM is running stores, cost is extremely expensive, considerably increases production cost.
The content of the invention
The technical problems to be solved by the invention are that precision mask plate FMM limits high-resolution Organic Electricity in the prior art
The development of electroluminescent devices and cause product and the defect problems such as variegation, colour mixture occur, so as to provide a kind of graphical organic work(
The preparation method of ergosphere and the high-resolution OLED prepared by this method.The organic function layer system of the present invention
Accurate mask plate is not needed when standby, so as to reduce production cost and improve yield.
In order to solve the above technical problems, the present invention is achieved by the following technical solutions：
A kind of preparation method of graphical organic function layer, comprises the following steps：
S11：The organic function layer that superposition is set, the first protective layer and the second protective layer are sequentially formed on base material, it is described
The sublimation temperature of first protective layer is less than the sublimation temperature of the organic function layer；
S12：According to predetermined pattern graphical second protective layer, the i.e. protective layer of etch away sections second make part
First protective layer is exposed；
S13：The product of the step S12, which is placed in the first hot environment, makes exposed first protective layer distil,
So that the organic function layer is exposed；The temperature of the first described hot environment is higher than the sublimation temperature of first protective layer
And less than the sublimation temperature of the machine functional layer；
S14：After substrate and base material contraposition, then being placed in the second hot environment shifts exposed organic function layer
On to the substrate, the temperature of second hot environment is higher than the sublimation temperature of the organic function layer.
First protective layer is organic thin film layer, and the second described protective layer is photoresist layer.
Etching is to remove the part photoresist layer using Exposure mode in the step S12, makes part organic work(
Energy film layer is exposed.
The thickness of the first described protective layer is more than the thickness of the organic function layer.
Described base material is the metal substrate of high-termal conductivity.
Described organic function layer is hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer
In one or more.
Hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer are prepared using described method
In one kind.
The high-resolution OLED that a kind of described method is prepared.The above-mentioned technical proposal of the present invention is compared to existing
There is technology that there is advantages below：
The preparation method for the organic function layer that the present invention is provided is deposited one layer in succession on the preferable metal substrate of thermal conductivity
The organic function layer needed to use in OLED and organic film protective layer one layer thicker and one layer of photoetching compound protective layer；This has
The sublimation temperature of machine thinfilm protective coating requires lower than the organic function layer needed to use in OLED, such as CBP (4,4'- double (N- clicks
Azoles) -1,1'- biphenyl), TPBi (1,3,5- tri- (1- phenyl -1H- benzimidazolyl-2 radicals-yl) benzene) etc..The photoetching compound protective layer profit
The mode exposed with Photo prepares figure, due to there is thicker organic film protective layer, can avoid undermost organic
Function film layer sustains damage；Under the protection of high-melting-point photoresist, the relatively low organic film of sublimation temperature is protected by heating
Sheath is removed in the way of heating sublimation；After substrate to be deposited and metal substrate contraposition, it can lead under the protection of photoresist
The organic film of exposure outside is transferred on substrate by the mode for crossing heating, for preparing high pixel resolution OLED.
The preparation process of the organic function layer of the present invention need not use accurate mask plate, due to accurate mask plate cost pole
It is expensive, often reduces by one group of accurate mask plate, you can preparation cost is greatly lowered.In addition, being had using accurate mask plate evaporation
During machine functional layer, the contraposition of accurate mask plate and evaporation substrate often makes accurate mask plate twine the phenomenons such as silk, off normal.Cause
This contraposition number of times is fewer, and accurate mask plate off normal and the probability for twining silk are fewer, and product yield is also higher.And the present invention is not required to
Use accurate mask plate, it is to avoid by accurate mask plate off normal and twine silk ribbon variegation and colour mixture etc. it is bad.With background skill
Art is compared, and this method is conducive to improving product yield.
Brief description of the drawings
In order that present disclosure is more likely to be clearly understood, below in conjunction with the accompanying drawings, further detailed is made to the present invention
Thin explanation, wherein,
Fig. 1-Fig. 4 is the graphical organic film preparation process schematic diagram of the present invention；
Fig. 5 is graphical organic film schematic diagram of the invention；
Fig. 6-Figure 10 is the preparation process schematic diagram of the high-resolution OLED of the present invention
Wherein reference is：100- metal bases, 101- organic function layers, the protective layers of 102- first, 103- second is protected
Sheath, 104- substrates, 201- substrates, 202- anodes, 203- hole injection layers, 204- hole transmission layers, 205- red sub-pixels
Luminescent layer, 206- green sub-pixel for emitting light layer, 207- blue subpixels luminescent layer, 208- electron transfer layers, 209- electron injections
Layer, 210- negative electrodes.
Embodiment
In order that the purpose, technical scheme and advantage of invention are clearer, below in conjunction with embodiment party of the accompanying drawing to invention
Formula is described in further detail.
Invention can be embodied in many different forms, and should not be construed as limited to embodiment set forth herein.Phase
Anti- there is provided these embodiments so that the disclosure will be thorough and complete, and the design of invention will be fully conveyed to ability
Field technique personnel, invention will only be defined by the appended claims.In the accompanying drawings, for clarity, layer and the chi in region can be exaggerated
Very little and relative size.It should be appreciated that when element such as layer, region or substrate are another referred to as " formed and existed " or " being arranged on "
Element " on " when, the element can be arranged directly on another element, or can also have intermediary element.On the contrary, working as
When element is referred to as on " being formed directly into " or " being set directly at " another element, in the absence of intermediary element.
As shown in Figures 1 to 4, a kind of preparation method of graphical organic function layer, comprises the following steps：
S11：As shown in figure 1, the organic function layer 101 that superposition is set is sequentially formed on base material 100, the first protective layer
102 and second protective layer 103, the sublimation temperature of first protective layer 102 is less than the distillation temperature of the organic function layer 101
Degree；First protective layer 102 is organic thin film layer, general to be prepared using the low sublimation temperature material such as CBP or TPB i；Described
Two protective layers 103 are photoresist layer.
S12：As shown in Fig. 2 being protected according to predetermined pattern graphical second protective layer 103, i.e. etch away sections second
Sheath 103 makes part first protective layer 102 exposed；The part photoresist layer is specifically removed using Exposure mode, made
The part organic thin film layer is exposed.
S13：The product of the step S12, which is placed in the first hot environment, makes 102 liters exposed of first protective layer
China, so that the organic function layer 101 is exposed；The temperature of the first described hot environment is higher than first protective layer 102
Sublimation temperature and less than the machine functional layer 101 sublimation temperature；
S14：After substrate 104 and the base material 100 are aligned, then it is placed in the second hot environment and makes exposed organic functions
Layer 101 is transferred on the substrate, obtains organic function layer as shown in Figure 5；The temperature of second hot environment is higher than institute
State the sublimation temperature of organic function layer 101.
Preferably, the thickness of the first described protective layer 102 is more than the thickness of the organic function layer 101.
Described base material 100 is the metal substrate of high-termal conductivity.
Described organic function layer is hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer
In one kind.
A kind of preparation method of high-resolution OLED, hole injection layer, hole transport are prepared using the above method
One kind or therein several in layer, luminescent layer, electron transfer layer and electron injecting layer.
A kind of high-resolution OLED preparation method, described high-resolution OLED as shown in Figure 10, is included in base
The anode 202 being stacked on one another, hole injection layer 203, hole transmission layer 204, red sub-pixel luminescent layer are sequentially depositing on plate 201
205th, green sub-pixel for emitting light layer 206, blue subpixels luminescent layer 207, electron transfer layer 208, electron injecting layer 209 and negative electrode
210, then encapsulate.
The method for preparing high-resolution OLED using the above method is as follows：
S21：Patterned anode 202 has been deposited respectively using prior art on substrate 201, and has utilized existing common technology
Hole injection layer 203 and hole transmission layer 204 is deposited, such as Fig. 6, has obtained the driving substrate with the first organic function layer；
S22：Prepare the blue subpixels luminescent layer 205 of partial denudation outside using above-mentioned S11-S13 methods, and by it
Aligned with base material 201, as shown in Figure 7；Specifically,
S11：The blue subpixels luminescent layer 205 that superposition is set, the He of the first protective layer 102 are sequentially formed on base material 100
Second protective layer 103, the sublimation temperature of first protective layer 102 is less than the distillation temperature of the blue subpixels luminescent layer 205
Degree；First protective layer 102 is organic thin film layer, general to be prepared using the low sublimation temperature material such as CBP or TPBi；Described second
Protective layer 103 is photoresist layer.
S12：Portion is made according to predetermined pattern graphical second protective layer 103, i.e. the second protective layer of etch away sections 103
Divide first protective layer 102 exposed；The part photoresist layer is specifically removed using Exposure mode, makes part described organic
Film layer is exposed.
S13：The product of the step S12, which is placed in the first hot environment, makes 103 liters exposed of second protective layer
China, so that the blue subpixels luminescent layer 205 is exposed；The temperature of the first described hot environment is higher than the described first protection
The sublimation temperature of layer 102 and the sublimation temperature for being less than the machine functional layer 101；Obtain the blue subpixels of partial denudation outside
Luminescent layer 205, then it is aligned with the driving substrate with the first organic function layer prepared by step S21, as shown in Figure 7.
S23：Patterned blue subpixels luminescent layer 205 is prepared above hole transmission layer using above-mentioned S14 methods,
Such as Fig. 8；Specifically, the product in Fig. 7 is placed in the second hot environment is transferred to exposed blue subpixels luminescent layer 205
On the driving substrate for having the first organic function layer, structure as shown in Figure 8 is obtained；The temperature of second hot environment is higher than
The sublimation temperature of the organic function layer 101.
S24：It is sequentially prepared out using above-mentioned S22, S23 step with green sub-pixel for emitting light layer 206 and red sub- picture
The structure of plain luminescent layer 207, as shown in Figure 9；
S25：Using existing common technology, electron transfer layer 208, electron injecting layer 209 is deposited successively above luminescent layer
And negative electrode 210, then high-resolution OLED is prepared, as shown in Figure 10.
Unless otherwise instructed, the device layers in the present invention are as follows using material：
Anode can use inorganic material or organic conductive polymer.Inorganic material is generally tin indium oxide (ITO), oxidation
The higher metal of the work function such as metal oxide or gold, copper, silver such as zinc (ZnO), indium zinc oxide (IZO), preferably ITO；It is organic to lead
Electric polymer is preferably polythiophene/polyvinylbenzenesulfonic acid sodium (hereinafter referred to as PEDOT/PSS), polyaniline (hereinafter referred to as PANI)
In one kind.
Negative electrode is typically using the relatively low metal of work function such as lithium, magnesium, calcium, strontium, aluminium, indium or they and copper, the conjunction of gold, silver
Gold, or the electrode layer that metal is alternatively formed with metal fluoride.Negative electrode is preferably Al layers in the present invention.
The material of hole transmission layer can be selected from arylamine class, carbazoles and branch polymer class low molecule material, preferably NPB and
TCTA。
The material of the hole injection layer can for example use the nitrogen of six cyano group -1,4,5,8,9,12- of 2,3,6,7,10,11- six
Miscellaneous benzophenanthrene HAT-CN, 4,4', 4''- tri- (3- aminomethyl phenyls aniline) triphen amino-group doping F4TCNQ, or use CuPc
(CuPc), or can be metal oxide-type, such as molybdenum oxide, rheium oxide.
The luminescent material of luminescent layer can be selected from Coumarins such as DMQA or C545T, or double pyrans such as DCJTB or DCM
Deng fluorescent dye, or containing Ir, Pt, Os, Ru, Rh, Pd, group of the lanthanides, the metal complex such as actinium series.
Doping concentration of the fluorescent dye in luminescent layer is not higher than 5wt%, doping concentration of the phosphorescent coloring in luminescent layer
Not higher than 30wt%.Described doping concentration=dyestuff quality/(dyestuff quality+material of main part quality) × 100%.
The material of main part of luminescent layer may be selected from being usually used in the material of host material, such as 4,4 '-two (carbazyl -9-) biphenyl
CBP etc..
The material of the electron transfer layer of the present invention can be using the material for being usually used in electron transfer layer, such as aromatic condensed ring class (such as
Pentacene, perylenes) or o-phenanthroline class (such as Bphen, BCP) compound.
The material of the electron injecting layer of the present invention can be using the material for being usually used in electron injecting layer, such as 8-hydroxy-quinoline lithium
(Liq), the compound such as lithium fluoride (LiF), yttrium fluoride (YF3).
Substrate can be glass or flexible substrate, and the flexible substrate can use polyesters, polyimide compound
Material or foil.The stacking and encapsulation can use any suitable method well known by persons skilled in the art.
Obviously, above-described embodiment is only intended to clearly illustrate example, and the not restriction to embodiment.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of change or
Change.There is no necessity and possibility to exhaust all the enbodiments.And the obvious change thus extended out or
Among changing still in the protection domain of the invention.
Claims (9)
1. a kind of preparation method of graphical organic function layer, it is characterised in that comprise the following steps：
S11：The organic function layer (101) that superposition is set, the first protective layer (102) and second are sequentially formed on base material (100)
Protective layer (103), the sublimation temperature of first protective layer (102) is less than the sublimation temperature of the organic function layer (101)；
S12：Portion is made according to predetermined pattern graphical second protective layer (103), the i.e. protective layer of etch away sections second (103)
Divide first protective layer (102) exposed；
S13：The product of the step S12, which is placed in the first hot environment, makes exposed first protective layer (102) distil,
So that the organic function layer (101) is exposed；The temperature of the first described hot environment is higher than first protective layer (102)
Sublimation temperature and less than the machine functional layer (101) sublimation temperature；
S14：After substrate (104) and the base material (100) contraposition, then it is placed in the second hot environment and makes exposed organic functions
Layer (101) is transferred on the substrate (104), and the temperature of second hot environment is higher than the organic function layer (101)
Sublimation temperature.
2. the preparation method of graphical organic function layer according to claim 1, it is characterised in that first protective layer
(102) it is organic thin film layer.
3. the preparation method of graphical organic function layer according to claim 2, it is characterised in that the second described protection
Layer (103) is photoresist layer.
4. the preparation method of graphical organic function layer according to claim 3, it is characterised in that in the step S12
Etching is to remove the part photoresist layer using Exposure mode, makes the part organic thin film layer exposed.
5. the preparation method of the graphical organic function layer according to claim any one of 1-4, it is characterised in that described
The thickness of first protective layer (102) is more than the thickness of the organic function layer (101).
6. the preparation method of graphical organic function layer according to claim 5, it is characterised in that described base material
(100) it is the metal substrate of high-termal conductivity.
7. the preparation method of graphical organic function layer according to claim 6, it is characterised in that described organic functions
Layer is the one or more in hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer.
8. a kind of preparation method of high-resolution OLED, it is characterised in that using described in claim any one of 1-7
Method prepares one kind in hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer.
9. the high-resolution OLED that a kind of method described in claim 8 is prepared.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511017656.5A CN105633302B (en) | 2015-12-29 | 2015-12-29 | A kind of preparation method and application of graphical organic function layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511017656.5A CN105633302B (en) | 2015-12-29 | 2015-12-29 | A kind of preparation method and application of graphical organic function layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105633302A CN105633302A (en) | 2016-06-01 |
| CN105633302B true CN105633302B (en) | 2017-08-04 |
Family
ID=56048025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201511017656.5A Active CN105633302B (en) | 2015-12-29 | 2015-12-29 | A kind of preparation method and application of graphical organic function layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105633302B (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6695029B2 (en) * | 2001-12-12 | 2004-02-24 | Eastman Kodak Company | Apparatus for permitting transfer of organic material from a donor to form a layer in an OLED device |
| DE10246425A1 (en) * | 2002-10-04 | 2004-04-15 | Technische Universität Braunschweig | Microstructuring by location-selective sublimation of low-molecular emission material to make organic electroluminescence components, employs film carrier in vacuum deposition process |
| KR100721565B1 (en) * | 2004-11-17 | 2007-05-23 | 삼성에스디아이 주식회사 | low molecular organic electro-luminescence device and method for fabricating the same |
| KR102065763B1 (en) * | 2013-03-27 | 2020-01-14 | 삼성디스플레이 주식회사 | Organic light emitting pattern forming method and apparatus for organic light emitting display device using sublimation type thermal transfer process |
-
2015
- 2015-12-29 CN CN201511017656.5A patent/CN105633302B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN105633302A (en) | 2016-06-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104321406B (en) | Semiconducting compound purposes in an organic light emitting device | |
| CN104538559B (en) | A kind of organic electroluminescence display device and method of manufacturing same with rgb pixel area | |
| CN100471352C (en) | Organic electroluminescence device | |
| CN104995187B (en) | Compound and use its organic electronic device | |
| US10482799B2 (en) | Rimless display device and preparation method thereof | |
| CN101752510A (en) | Light-emitting element, light-emitting device, electronic device, and lighting device | |
| JP2001052870A (en) | Organic electroluminescent element | |
| CN101901877A (en) | Light-emitting component, light-emitting device, electronic equipment and lighting device | |
| CN105489631A (en) | Organic light-emitting display device and preparation method thereof | |
| KR102152012B1 (en) | Fluorescent compound and Organic light emitting diode device using the same | |
| CN102709485A (en) | OELD (Organic Electroluminescent Device) and preparation method thereof | |
| CN108055841A (en) | Compound and the organic electronic device for including it | |
| CN106531775A (en) | Organic light-emitting diode display substrate and display device and preparation method thereof | |
| CN104218049A (en) | Organic light-emitting display device and method of manufacturing the same | |
| CN104241536A (en) | Organic light-emitting device | |
| CN106045863A (en) | Compound and organic light-emitting device including the same | |
| CN104518121B (en) | A kind of organic electroluminescence device | |
| Yu et al. | Fluorinated 9, 9′-bianthracene derivatives with twisted intramolecular charge-transfer excited states as blue host materials for high-performance fluorescent electroluminescence | |
| CN105470281A (en) | Organic light emitting display device and method of manufacturing the same | |
| CN101540375A (en) | Organic electroluminescence device | |
| CN104717773A (en) | Organic electroluminescence device with four-color sub pixels and manufacturing method thereof | |
| US9640590B2 (en) | Organic light-emitting diode display and fabrication method thereof | |
| CN105633302B (en) | A kind of preparation method and application of graphical organic function layer | |
| CN105265023A (en) | Organic el display device | |
| KR100594775B1 (en) | White organic light emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |