CN105633302A - Preparation method of graphical organic functional layer and application thereof - Google Patents
Preparation method of graphical organic functional layer and application thereof Download PDFInfo
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- CN105633302A CN105633302A CN201511017656.5A CN201511017656A CN105633302A CN 105633302 A CN105633302 A CN 105633302A CN 201511017656 A CN201511017656 A CN 201511017656A CN 105633302 A CN105633302 A CN 105633302A
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
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Abstract
The invention provides a preparation method of a graphical organic functional layer. The preparation method comprises the following steps that an organic functional layer, a first protection layer and a second protection layer which are arranged in a lamination way are formed on base material in turn, and a part of the second protection layer is etched so that a part of the first protection layer is enabled to be exposed; the exposed second protection layer is sublimated so that the organic functional layer is enabled to be exposed; and a substrate and the base material are aligned and then arranged in high temperature environment so that the exposed organic functional layer is transferred to the substrate. According to the method, a precise mask plate is not required in preparation of a light-emitting layer in a high-resolution OLED device so that production cost can be reduced and yield rate can be enhanced.
Description
Technical field
The invention belongs to organic electroluminescence device technical field, the preparation method being specifically related to a kind of graphical organic function layer and the high-resolution OLED utilizing the method to prepare.
Background technology
Organnic electroluminescent device OLED generally comprises hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer, and the luminescent layer of current Full-color OLED needs repeatedly to use accurate mask plate FineMetalMask (FMM) to steam plating.
Due to material and the manufacture craft of accurate mask plate FMM itself, limit the development of high resolving power Organnic electroluminescent device. In evaporation process process, change mask plate all needs itself and substrate exactitude position to be deposited every time, but when contraposition, accurate mask plate FMM off normal often can occur, twines the phenomenons such as silk thus cause product the defect such as variegation, colour mixture occur, reduces good rate. In addition, accurate mask plate FMM is running stores, and cost is extremely expensive, considerably increases production cost.
Summary of the invention
Technical problem to be solved by this invention is that in prior art, accurate mask plate FMM limits the development of high resolving power Organnic electroluminescent device and causes product and the defect problem such as variegation, colour mixture occurs, thus the high-resolution OLED preparation method of a kind of graphical organic function layer being provided and preparing by this kind of method. Do not need accurate mask plate time prepared by the organic function layer of the present invention, thus reduce production cost and improve good rate.
For solving the problems of the technologies described above, the present invention is achieved by the following technical solutions:
A preparation method for graphical organic function layer, comprises the steps:
S11: forming the organic function layer that superposition is arranged on base material successively, the first protective layer and the 2nd protective layer, the sublimation temperature of described first protective layer is lower than the sublimation temperature of described organic function layer;
S12: according to predetermined pattern graphically described 2nd protective layer, namely etches away part the 2nd protective layer and makes described first protective layer of part exposed;
S13: the product of described step S12 is placed in the first hot environment and makes exposed described first protective layer distillation, thus make described organic function layer exposed; The sublimation temperature of the temperature of the first described hot environment higher than described first protective layer and the sublimation temperature lower than described machine functional layer;
S14: after substrate and described base material contraposition, then be placed in the 2nd hot environment and make exposed organic function layer be transferred on described substrate, the temperature of described 2nd hot environment is higher than the sublimation temperature of described organic function layer.
Described first protective layer is organic thin film layer, and the 2nd described protective layer is photoresist layer.
In described step S12, etching adopts Exposure mode to remove described part photoresist layer, makes part described organic functional thin film layer exposed.
The thickness of the first described protective layer is greater than the thickness of described organic function layer.
Described base material is the metal substrate of high thermal conductivity.
Described organic function layer is one or more in hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer.
Method described in employing prepares the one in hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer.
The high-resolution OLED that a kind of described method prepares. The technique scheme of the present invention has the following advantages compared to existing technology:
The preparation method of organic function layer provided by the invention in succession steams the organic function layer and one layer of thicker organic film protective layer and a layer photoetching compound protective layer that plate and need use in one layer of OLED on the good metal substrate of thermal conductivity; The sublimation temperature of this organic film protective layer requires lower than needing the organic function layer used in OLED; such as CBP (two (N-the carbazole)-1,1'-biphenyl of 4,4'-), TPBi (1; 3,5-tri-(1-phenyl-1H-benzoglyoxaline-2-base) benzene) etc. The mode that described photoresist material protective layer utilizes Photo to expose prepares figure, owing to there is thicker organic film protective layer, it is possible to avoid the organic functional thin film layer of orlop to be damaged; Under the protection of high-melting-point photoresist material, by heating, organic film protective layer lower for sublimation temperature is removed in the way of heating sublimation; After substrate to be deposited and metal substrate contraposition, under the protection of photoresist material can by the mode of heating by being exposed to outer organic film transfer on substrate, for the preparation of high pixel resolution OLED.
The preparation process of the organic function layer of the present invention does not need to use accurate mask plate, owing to accurate mask plate cost is extremely expensive, often reduces by one group of accurate mask plate, can significantly reduce preparation cost. In addition, when adopting accurate mask plate to steam plating organic function layer, accurate mask plate and the contraposition steaming plated substrate often can make accurate mask plate twine the phenomenon such as silk, off normal. Therefore contraposition number of times is more few, and accurate mask plate off normal is more few with the probability twining silk, and product yield is also more high. And the present invention does not need to use accurate mask plate, avoid by accurate mask plate off normal and to twine the variegation of silk ribbon and colour mixture etc. bad. Compared with background technology, the method is conducive to improving product yield.
Accompanying drawing explanation
In order to make the content of the present invention be more likely to be clearly understood, below in conjunction with accompanying drawing, the present invention is further detailed explanation, wherein,
Fig. 1-Fig. 4 is the graphical organic film preparation process schematic diagram of the present invention;
Fig. 5 is the graphical organic film schematic diagram of the present invention;
Fig. 6-Figure 10 is the preparation process schematic diagram of the high resolving power OLED of the present invention
Wherein Reference numeral is: 100-metal base; 101-organic function layer; 102-first protective layer, 103-the 2nd protective layer, 104-substrate; 201-substrate; 202-anode, 203-hole injection layer, 204-hole transmission layer; 205-red sub-pixel luminescent layer, 206-green sub-pixels luminescent layer, 207-blue subpixels luminescent layer, 208-electron transfer layer, 209-electron injecting layer, 210-negative electrode.
Embodiment
In order to make the object of invention, technical scheme and advantage clearly, below in conjunction with accompanying drawing, the enforcement mode of invention is described in further detail.
Invention can be implemented in many different forms, and should not be understood to be limited to embodiment set forth herein. On the contrary, it is provided that these embodiments so that the disclosure will be thorough and complete, and will the design of invention fully being passed on to those skilled in the art, invention will only be limited by claim. In the accompanying drawings, for clarity, the size in layer and region and relative dimension can be exaggerated. Should be understood that, when element such as layer, region or substrate be referred to as " being formed in " or " being arranged on " another element " on " time, this element can be set directly on another element described, or can also there is intermediary element. On the contrary, when element is referred to as on " being formed directly into " or " being set directly at " another element, there is not intermediary element.
As shown in Figures 1 to 4, the preparation method of a kind of graphical organic function layer, comprises the steps:
S11: as shown in Figure 1, forms organic function layer 101, first protective layer 102 and the 2nd protective layer 103 that superposition is arranged successively on base material 100, and the sublimation temperature of described first protective layer 102 is lower than the sublimation temperature of described organic function layer 101; Prepared by the low sublimation temperature materials such as the first protective layer 102 is organic thin film layer, general CBP or TPBi of employing; The 2nd described protective layer 103 is photoresist layer.
S12: as shown in Figure 2, according to predetermined pattern graphically described 2nd protective layer 103, namely etches away part the 2nd protective layer 103 and makes described first protective layer 102 of part exposed; Specifically adopt Exposure mode to remove described part photoresist layer, make the described organic thin film layer of part exposed.
S13: the product of described step S12 is placed in the first hot environment exposed described first protective layer 102 is distilled, thus make described organic function layer 101 exposed; The sublimation temperature of the temperature of the first described hot environment higher than described first protective layer 102 and the sublimation temperature lower than described machine functional layer 101;
S14: by after substrate 104 and the contraposition of described base material 100, then be placed in the 2nd hot environment exposed organic function layer 101 is transferred on described substrate, obtain organic function layer as shown in Figure 5; The temperature of described 2nd hot environment is higher than the sublimation temperature of described organic function layer 101.
Preferably, the thickness of the first described protective layer 102 is greater than the thickness of described organic function layer 101.
Described base material 100 is the metal substrate of high thermal conductivity.
Described organic function layer is the one in hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer.
A preparation method for high-resolution OLED, adopts aforesaid method to prepare a kind of in hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer or wherein several.
The preparation method of a kind of high-resolution OLED, described high-resolution OLED is as shown in Figure 10, it is included on substrate 201 and deposits the anode 202, hole injection layer 203, hole transmission layer 204, red sub-pixel luminescent layer 205, green sub-pixels luminescent layer 206, blue subpixels luminescent layer 207, electron transfer layer 208, electron injecting layer 209 and the negative electrode 210 that are laminated to each other successively, then encapsulate.
Aforesaid method is utilized to prepare the method for high resolving power OLED as follows:
S21: utilize prior art to steam respectively on substrate 201 and plated patterned anode 202, and utilize existing common technology to steam and plated hole injection layer 203 and hole transmission layer 204, such as Fig. 6, obtain the driving substrate with the first organic function layer;
S22: utilize above-mentioned S11-S13 method to prepare the exposed blue subpixels luminescent layer 205 of part, and by it and base material 201 contraposition, as shown in Figure 7; Specifically,
S11: forming blue subpixels luminescent layer 205, first protective layer 102 and the 2nd protective layer 103 that superposition is arranged on base material 100 successively, the sublimation temperature of described first protective layer 102 is lower than the sublimation temperature of described blue subpixels luminescent layer 205; Prepared by the low sublimation temperature materials such as the first protective layer 102 is organic thin film layer, general CBP or TPBi of employing; The 2nd described protective layer 103 is photoresist layer.
S12: according to predetermined pattern graphically described 2nd protective layer 103, namely etches away part the 2nd protective layer 103 and makes described first protective layer 102 of part exposed; Specifically adopt Exposure mode to remove described part photoresist layer, make the described organic thin film layer of part exposed.
S13: the product of described step S12 is placed in the first hot environment exposed described 2nd protective layer 103 is distilled, thus make described blue subpixels luminescent layer 205 exposed; The sublimation temperature of the temperature of the first described hot environment higher than described first protective layer 102 and the sublimation temperature lower than described machine functional layer 101; Namely the exposed blue subpixels luminescent layer 205 of part is obtained, then the driving substrate contraposition with the first organic function layer prepared by itself and step S21, as shown in Figure 7.
S23: utilize above-mentioned S14 method to prepare patterned blue subpixels luminescent layer 205 above hole transmission layer, such as Fig. 8; Specifically, the product in Fig. 7 is placed in the 2nd hot environment make exposed blue subpixels luminescent layer 205 be transferred to described in have on the driving substrate of the first organic function layer, obtain structure as shown in Figure 8; The temperature of described 2nd hot environment is higher than the sublimation temperature of described organic function layer 101.
S24: utilize above-mentioned S22, S23 step to prepare with the structure of green sub-pixels luminescent layer 206 and red sub-pixel luminescent layer 207 successively, as shown in Figure 9;
S25: utilize existing common technology, steams plating electron transfer layer 208, electron injecting layer 209 and negative electrode 210 above luminescent layer successively, then prepares high resolving power OLED, as shown in Figure 10.
If no special instructions, the device layers in the present invention adopts material as follows:
Anode can adopt inorganic materials or organic conductive polymer. Inorganic materials is generally the higher metal of the work functions such as metal oxide or gold, copper, silver such as tin indium oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), it is preferable that ITO; The one that organic conductive polymer is preferably in Polythiophene/polyvinylbenzenesulfonic acid sodium (hereinafter referred to as PEDOT/PSS), polyaniline (hereinafter referred to as PANI).
Negative electrode generally adopts the alloy of metal that the work functions such as lithium, magnesium, calcium, strontium, aluminium, indium are lower or they and copper, gold and silver, or the electrode layer that metal and metal fluoride are alternately formed. In the present invention, negative electrode is preferably Al layer.
The material of hole transmission layer can be selected from arylamine class, carbazoles and branch polymer class low molecule material, it is preferable that NPB and TCTA.
The material of described hole injection layer such as can adopt 2,3,6,7,10,11-six cyano group-1,4,5,8,9,12-six pyridine is luxuriant and rich with fragrance HAT-CN also, and 4,4', 4''-tri-(3-aminomethyl phenyl aniline) triphenylamine doped F 4TCNQ, or adopt phthalocyanine copper (CuPc), or can be metal oxide-type, and such as molybdenum oxide, rhenium oxide.
The luminescent material of luminescent layer can be selected from coumarins such as DMQA or C545T, or two pyran is such as fluorescence dyes such as DCJTB or DCM, or contains Ir, Pt, Os, Ru, Rh, Pd, group of the lanthanides, the metal complexess such as actinium series.
The doping content of fluorescence dye in luminescent layer be not higher than 5wt%, and the doping content of phosphorescent coloring in luminescent layer be not higher than 30wt%. Described doping content=dyestuff quality/(dyestuff quality+material of main part quality) �� 100%.
The material of main part of luminescent layer can be selected from the material being usually used in substrate material, such as 4,4 '-two (carbazyl-9-) biphenyl CBP etc.
The material of the electron transfer layer of the present invention can adopt the material being usually used in electron transfer layer, as aromatic condensed ring class (as Pentacene) or o-phenanthroline class (such as Bphen, BCP) compound.
The material of the electron injecting layer of the present invention can adopt the material being usually used in electron injecting layer, such as compounds such as 8-hydroxy-quinoline lithium (Liq), lithium fluoride (LiF), yttrium fluorides (YF3).
Substrate can be glass or flexible substrate, and described flexible substrate can adopt polyester, polyimide compound-material or thin tinsel. Described stacking and encapsulation can adopt any suitable method well known by persons skilled in the art.
Obviously, above-described embodiment is only for example is clearly described, and not to the restriction of the mode of enforcement. For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description. Here without the need to also cannot all enforcement modes be given exhaustive. And the apparent change thus extended out or variation are still among the protection domain of the invention.
Claims (9)
1. the preparation method of a graphical organic function layer, it is characterised in that, comprise the steps:
S11: form the organic function layer (101) that superposition is arranged on base material (100) successively, first protective layer (102) and the 2nd protective layer (103), the sublimation temperature of described first protective layer (102) is lower than the sublimation temperature of described organic function layer (101);
S12: according to predetermined pattern graphically described 2nd protective layer (103), namely etch away part the 2nd protective layer (103) and make described first protective layer of part (102) exposed;
S13: the product of described step S12 is placed in the first hot environment and makes exposed described first protective layer (102) distillation, thus make described organic function layer (101) exposed; The sublimation temperature of the temperature of the first described hot environment higher than described first protective layer (102) and the sublimation temperature lower than described machine functional layer (101);
S14: after substrate (104) and described base material (100) contraposition, being placed in the 2nd hot environment again makes exposed organic function layer (101) be transferred on described substrate (104), and the temperature of described 2nd hot environment is higher than the sublimation temperature of described organic function layer (101).
2. the preparation method of graphical organic function layer according to claim 1, it is characterised in that, described first protective layer (102) is organic thin film layer.
3. the preparation method of graphical organic function layer according to claim 2, it is characterised in that, the 2nd described protective layer (103) is photoresist layer.
4. the preparation method of graphical organic function layer according to claim 3, it is characterised in that, in described step S12, etching adopts Exposure mode to remove described part photoresist layer, makes the described organic thin film layer of part exposed.
5. the preparation method of graphical organic function layer according to the arbitrary item of claim 1-4, it is characterised in that, the thickness of described the first protective layer (102) is greater than the thickness of described organic function layer (101).
6. the preparation method of graphical organic function layer according to claim 5, it is characterised in that, the metal substrate that described base material (100) is high thermal conductivity.
7. the preparation method of graphical organic function layer according to claim 6, it is characterised in that, described organic function layer is one or more in hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer.
8. the preparation method of a high-resolution OLED, it is characterised in that, adopt the method described in the arbitrary item of claim 1-7 to prepare the one in hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer.
9. the high-resolution OLED that a method according to claim 8 prepares.
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| CN1424777A (en) * | 2001-12-12 | 2003-06-18 | 伊斯曼柯达公司 | Apparatus for transferring organic material by donor to form layer in organic LED device |
| CN1703323A (en) * | 2002-10-04 | 2005-11-30 | 布伦瑞克科技大学 | Method for microstructuring by means of locally selective sublimation |
| CN1780019A (en) * | 2004-11-17 | 2006-05-31 | 三星Sdi株式会社 | Small molecular organic electroluminescent display device and method of fabricating the same |
| US20140295601A1 (en) * | 2013-03-27 | 2014-10-02 | Samsung Display Co., Ltd. | Method of forming organic light emitting pattern and apparatus for forming organic light emitting pattern of organic electro-luminescence display using sublimation type thermal transfer method |
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- 2015-12-29 CN CN201511017656.5A patent/CN105633302B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1424777A (en) * | 2001-12-12 | 2003-06-18 | 伊斯曼柯达公司 | Apparatus for transferring organic material by donor to form layer in organic LED device |
| CN1703323A (en) * | 2002-10-04 | 2005-11-30 | 布伦瑞克科技大学 | Method for microstructuring by means of locally selective sublimation |
| CN1780019A (en) * | 2004-11-17 | 2006-05-31 | 三星Sdi株式会社 | Small molecular organic electroluminescent display device and method of fabricating the same |
| US20140295601A1 (en) * | 2013-03-27 | 2014-10-02 | Samsung Display Co., Ltd. | Method of forming organic light emitting pattern and apparatus for forming organic light emitting pattern of organic electro-luminescence display using sublimation type thermal transfer method |
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