CN105633290A - OLED device and manufacturing method thereof - Google Patents
OLED device and manufacturing method thereof Download PDFInfo
- Publication number
- CN105633290A CN105633290A CN201511029123.9A CN201511029123A CN105633290A CN 105633290 A CN105633290 A CN 105633290A CN 201511029123 A CN201511029123 A CN 201511029123A CN 105633290 A CN105633290 A CN 105633290A
- Authority
- CN
- China
- Prior art keywords
- pixel
- layer
- dielectric layer
- oled
- hole injection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The invention discloses an OLED device and a manufacturing method thereof. The OLED device comprises a public cavity implantation layer and different kinds of pixels. Each of the pixels comprises an anode. The public cavity implantation layer is connected with the anodes of all the pixels. The thickness of the public cavity implantation layer does not exceed a set threshold value, so the resistance value of the public cavity implantation layer is allowed to be larger than a set resistance value. Electronics in the public cavity implantation layer in the other pixel regions will not migrate under the restraining effect of resistance when the OLED device sends out single-color light. Thus, generation of cavities is effectively reduced and other pixels will not give out light. In other words, on the premise that display characteristics of the OLED device are not changed, glomming phenomena of other pixels are effectively avoided.
Description
Technical field
The present invention relates to OLED Display Technique field, particularly relate to a kind of OLED and manufacture method thereof.
Background technology
Along with the development of light emitting diode (OrganicLight-EmittingDiode, OLED) technology, the feature such as good for the OLED characteristics of luminescence, low energy consumption so that OLED is widely applied in display, lighting field.
At present, the principle of luminosity of OLED is based on organic luminous layer therein, and when there being electric current to pass through, the luminous organic material in organic luminous layer can be luminous. Luminous organic material generally comprises: blue light (Blue, B) material, green glow (Green, G) material and HONGGUANG (Red, R) material. Thus, OLED can send the light of three kinds of colors.
Specifically, as shown in Figure 1, structure sectional view for OLED, illustrate the pixel of 3 kinds of colors, based on structure as shown in Figure 1, the principle of OLED is: when supplying power to appropriate voltage, electronics is sent by negative electrode Cathode, through electron transfer layer ETL enter different pixels organic luminous layer (organic luminous layer includes: be separately filled with the organic luminous layer EML-B of three kinds of luminous organic materials, EML-G and EML-R), by anode (material of the anode in Fig. 1 is silver Ag) under the effect of certain voltage, hole injection layer HIL is formed hole, and by hole transmission layer HTL to transporting holes in organic luminous layer, make the electron transfer in organic luminous layer to hole, so that pixel light emission. but, owing to the electric conductivity of hole injection layer HIL (also including public hole injection layer HIL-Common) is stronger, so, when only sending the light of a kind of color to control OLED, electric current can laterally have influence on the pixel of other colors by public hole injection layer HIL-Common so that the pixel of other colors also sends a degree of light.
Such as: in FIG, luminous to control pixel G, so, after applying certain voltage for pixel G, organic the luminescent layer of pixel G sends HONGGUANG, but owing to the electric conductivity of public hole injection layer HIL-Common is strong, so, it is in the public hole injection layer HIL-Common of pixel B and pixel R position and also can produce hole, and be injected in organic luminous layer so that pixel B and pixel R glimmer.
In prior art, in order to solve the phenomenon of other colored pixels glimmers under above-mentioned monochromatic luminous scene, it will usually the material of hole injection layer HIL to be replaced with the material that electric conductivity is poor, or, use electron transfer layer ETL to replace HIL.
But, mode of the prior art will change the device performance of OLED, and the display effect ultimately resulting in OLED is affected.
Summary of the invention
The embodiment of the present invention provides a kind of OLED and manufacture method thereof, existing avoids the OLED problem that the mode of other color glimmers can affect OLED performance under monochromatic luminous scene in order to solving.
The present invention provides a kind of OLED, described OLED comprises public hole injection layer and different types of pixel, different types of pixel comprises anode, described public hole injection layer is connected with the anode of various types of pixel respectively, the thickness of described public hole injection layer is less than setting threshold value so that the resistance of described public hole injection layer is more than setting resistance value.
Further, the thickness of described public hole injection layer is 1��100nm.
Further, described anode includes: metal polar plate, dielectric layer, transparency conducting layer;
Described dielectric layer is for transmitting the light sent by pixel, and this dielectric layer is located at described metal polar plate surface, described transparency conducting layer cover described dielectric layer.
Further, the light path of the light that the described thickness of dielectric layers in the anode of variety classes pixel sends with different pixels respectively matches.
Further, the area of described dielectric layer more than this dielectric layer the area of organic luminous layer within the pixel.
Further, the material of described dielectric layer includes: ultraviolet light UV solidifies polymer.
The present invention also provides for the manufacture method of a kind of OLED, and described method includes:
The anode of variety classes pixel is provided;
Anode surface in variety classes pixel is deposited with and forms thickness less than the public hole injection layer setting threshold value.
Further, form thickness less than the public hole injection layer setting threshold value, specifically include:
Form the public hole injection layer that thickness is 1��100nm.
Further, it is provided that the anode of variety classes pixel, specifically include:
Metal polar plate is provided for any pixel;
A wherein surface of the metal polar plate of this pixel arranges dielectric layer;
The dielectric layer of this pixel arranges transparency conducting layer, forms the anode of this pixel.
Further, a wherein surface of the metal polar plate of this pixel arranges dielectric layer, specifically includes:
The mixed solvent solidifying polymer containing ultraviolet light UV is provided;
Described mixed solvent flash distillation is formed on a wherein surface of the metal polar plate of this pixel deielectric-coating;
Use UV illumination that deielectric-coating is solidify to form dielectric layer.
Further, a wherein surface of the metal polar plate of this pixel arranges dielectric layer, specifically includes:
Transparent inorganic material is provided;
By film-forming process, transparent inorganic material is formed on the metal polar plate of pixel the unified media layer setting thickness;
For specific pixel, unified media layer use transparent inorganic material form pixel dielectric layer so that unified media layer and pixel dielectric layer are collectively forming dielectric layer in specific pixel.
Further, described transparent inorganic material includes: at least one in silicon oxide, silicon nitride;
Described film-forming process includes: at least one in heat evaporation, Atomic layer deposition ALD;
Described specific pixel includes pixel G and pixel R.
Further, the light path of the light that the thickness of described dielectric layer and this pixel send matches.
In embodiments of the present invention, for OLED, the thickness of public hole injection layer therein is reduced to the thickness range of setting, thus, add the impedance of public hole injection layer, make to send under the scene of solid color light in OLED, the electronics of the public hole injection layer being positioned at other pixel regions does not migrate under the inhibitory action of impedance, thus also just effectively reducing Holes buffer layer, make other pixels not luminous, in other words, adopt the mode of the present invention under the premise not changing OLED display characteristic, effectively prevent the phenomenon of other pixel glimmers.
Accompanying drawing explanation
Accompanying drawing described herein is used for providing a further understanding of the present invention, constitutes the part of the present invention, and the schematic description and description of the present invention is used for explaining the present invention, is not intended that inappropriate limitation of the present invention. In the accompanying drawings:
Fig. 1 is the structural representation of OLED in prior art;
The structural representation of a kind of OLED that Fig. 2 a first embodiment of the invention provides;
The structural representation of the anode of different pixels and public hole injection layer in the OLED that Fig. 2 b��2d provides for first embodiment of the invention;
The structural representation of the OLED that Fig. 3 provides for third embodiment of the invention.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with the specific embodiment of the invention and corresponding accompanying drawing, technical solution of the present invention is clearly and completely described. Obviously, described embodiment is only a part of embodiment of the present invention, rather than whole embodiments. Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of protection of the invention.
As shown in Figure 2 a, structural representation for a kind of OLED D1 that first embodiment of the invention provides, specifically, OLED D1 includes different types of pixel: pixel 10 (being used for sending blue light), pixel 20 (being used for sending green light), pixel 30 (being used for sending red light), with public hole injection layer (HIL-Common) 40, different types of pixel comprises anode and (does not carry out labelling in fig. 2 a, follow-up will in Fig. 2 b��2d concrete labelling illustrate), public hole injection layer 40 is connected with the anode of different types of pixel respectively, and, the thickness of public hole injection layer 40 is less than setting threshold value, make the resistive impedance of public hole injection layer 40 more than setting resistance value.
Certainly, for each pixel, wherein also include the structures such as such as negative electrode Cathode, electron transfer layer ETL, organic luminous layer EML, hole transmission layer HTL, substrate ITO, owing to being prior art, therefore no longer too much describe in the present invention.
It should be noted that, in the embodiment of the present application, above-mentioned sets threshold value as 100nm, based on this, unlike the prior art, just because of public hole injection layer 40 thickness less than set threshold value, thus, under the effect of public hole injection layer 40 semiconductor material characteristic, the impedance that makes public hole injection layer 40 higher (it is believed that, when thickness is less than 100nm, the impedance of public hole injection layer 40 makes only minimal amount of electronics horizontal proliferation, it is not enough to trigger other colored pixels luminous), so, when any pixel issues light in voltage effect, owing to the resistance value of public hole injection layer 40 is higher than the resistance value set, so, electronics in the public hole injection layer 40 of other pixels is by the restriction of impedance, just will not flow in the anode of luminous pixel, also hole would not be formed, thus, the phenomenon of other color glimmers when OLED sends solid color light can be prevented effectively from, OLED is made to send under the scene of solid color light, keep normal display characteristic.
It should be noted that, in embodiments of the present invention, the thickness of public hole injection layer 40 is in the scope of 1��100nm, it is ensured that public hole injection layer 40 has higher impedance, thus reducing or avoiding the electron transfer in the public hole injection layer 40 under other pixel regions.
Now in order to OLED structure in the present invention is explicitly described, it is respectively directed to different pixels to illustrate, as shown in Figure 2 b, illustrate the structure of the anode 101 in pixel 10 and public hole injection layer 40, wherein, anode 101 includes: metal polar plate 1011, transparency conducting layer 1012, dielectric layer 1013, and dielectric layer 1013 is for transmitting the light sent by pixel 10, this dielectric layer 1013 is located at metal polar plate 1011 surface, transparency conducting layer 1012 cover this dielectric layer 1013.
In embodiments of the present invention, the material of metal polar plate 1011 can be silver Ag, the gold metal such as Au, platinum Pt. The material of transparency conducting layer 1012 can be the transparent and electrically conductive materials such as tin indium oxide ITO. The material of dielectric layer 1013 can be such as: the ultraviolet light UV cured polymer material such as polyimides, acrylate. Certainly, limitation of the invention it is not intended that here.
Analogously, as shown in Figure 2 c, anode 201 in pixel 20 and the structure of public hole injection layer 40, similarly, anode 201 also includes: metal polar plate 2011, transparency conducting layer 2012, dielectric layer 2013, dielectric layer 2013 is for transmitting the light sent by pixel 20, and this dielectric layer 2013 is located at metal polar plate 2011 surface, transparency conducting layer 2012 cover this dielectric layer 2013. The material of each structure in anode 201 is similar with the material of each structure in above-mentioned anode 101 in figure 2 c, therefore no longer too much repeats at this.
As shown in Figure 2 d, anode 301 in pixel 30 and the structure of public hole injection layer 40, similarly, anode 301 also includes: metal polar plate 3011, transparency conducting layer 3012, dielectric layer 3013, dielectric layer 3013 is for transmitting the light sent by pixel 30, this dielectric layer 3013 is located at metal polar plate 3011 surface, transparency conducting layer 3012 cover this dielectric layer 3013. The material of each structure in anode 301 is similar with the material of each structure in above-mentioned anode 101 in figure 2 c, therefore no longer too much repeats at this.
Can be seen that from above-mentioned anode construction as shown in Fig. 2 b��2d, the thickness of dielectric layer set in different pixels anode is also inconsistent, this is because: when practical application, in the organic luminous layer of different colours pixel after luminescence, light can penetrate respectively to negative electrode and anode, to the light of anode injection after the reflection of metal polar plate, directive negative electrode, and formed with the light of directive negative electrode and to interfere, appear from negative electrode again, in this process, distance from the metal polar plate of anode to cathode surface is considered as the light path of the light that pixel sends, to send the light of respective color, it is accomplished by arranging corresponding light path.
So, in embodiments of the present invention, the light path of the light that the thickness of dielectric layers in the anode of different pixels sends with different pixels respectively matches.
Known based on foregoing, the part light sent due to pixel requires over dielectric layer directive metal polar plate surface, and reflected again through dielectric layer directive negative electrode by metal polar plate, so, as a kind of mode in the embodiment of the present invention, for each pixel, the area of its dielectric layer more than this dielectric layer the area of organic luminous layer within the pixel. Thus dielectric layer can be effectively taking place in transmission pixel the light sent.
In sum, in embodiments of the present invention, for OLED, the thickness of public hole injection layer therein is reduced to the thickness range of setting, thus, add the impedance of public hole injection layer, make to send under the scene of solid color light in OLED, the electronics of the public hole injection layer being positioned at other pixel regions does not migrate under the inhibitory action of impedance, thus also just effectively reducing Holes buffer layer, make other pixels not luminous, in other words, adopt the mode of the present invention under the premise not changing OLED display characteristic, effectively prevent the phenomenon of other pixel glimmers.
Additionally, from Fig. 2 a it can be seen that on public hole injection layer 40, pixel 20 and can without arranging hole injection layer HIL-G and the HIL-R of self in pixel 30, in actual technological process, minimizings is deposited with flow process, reduction cost by this.
Being above the structure of the OLED provided in the embodiment of the present invention, in the second embodiment of the present invention, also provide for the manufacture method of a kind of OLED, the method comprises the steps:
Step 11: the anode of variety classes pixel is provided.
Step 12: the anode surface in variety classes pixel is deposited with and forms thickness less than the public hole injection layer setting threshold value.
Through above-mentioned steps, the thickness of the manufactured public hole injection layer in OLED is thin, the impedance making public hole injection layer increases, thus not changing on the basis of display characteristic of OLED, is effectively prevented under solid color luminescence scene the phenomenon of the pixel glimmer of other colors.
Certainly, in embodiments of the present invention, form thickness less than the public hole injection layer setting threshold value, specifically may include that and form the public hole injection layer that thickness is 1��100nm.
Correspondingly, the thickness of public hole injection layer is decreased, it is possible to the light path in each pixel is impacted, thus, in embodiments of the present invention, in the anode provided, include dielectric layer, specifically, it is provided that the anode of variety classes pixel, following steps are specifically included:
Step 21: provide metal polar plate for any pixel.
Step 22: dielectric layer is set on a wherein surface of the metal polar plate of this pixel.
Step 23: arrange transparency conducting layer on the dielectric layer of this pixel, forms the anode of this pixel.
Need exist for illustrate be, in embodiments of the present invention, the mode arranging dielectric layer on a wherein surface of the metal polar plate of this pixel can adopt the modes such as heat evaporation, ultrasound wave flash distillation, ink-jet, chemical vapor deposition, in ultrasound wave flash distillation mode, a wherein surface of the metal polar plate of pixel arranges dielectric layer, it is possible to adopt following steps:
Step 31: the mixed solvent solidifying polymer containing ultraviolet light UV is provided.
Step 32: described mixed solvent flash distillation is formed on a wherein surface of the metal polar plate of this pixel deielectric-coating.
Step 33: use UV illumination that deielectric-coating is solidify to form dielectric layer.
It should be noted that the light path of light that the thickness of the dielectric layer formed by said method step is sent with corresponding pixel matches. Certainly, in actual applications, the common medium layer (thickness matching of common medium layer is in the minima of pixel light path) of same thickness can be first set on the metal polar plate of inhomogeneous pixel, on the common medium layer of corresponding pixel, the dielectric layer of respective thickness is added again, here and constitute the restriction of the present invention for the light path needed for different pixels.
It addition, in the present invention, for dielectric layer, also provide for another kind of embodiment (i.e. the 3rd embodiment), specifically:
As shown in Figure 3, illustrate the structure D2 of OLED in the 3rd embodiment, with above-mentioned OLED D1 structure as shown in Figure 2 a the difference is that, the dielectric layer of the OLED D2 in the present embodiment comprise the identical unified media layer of thickness (dielectric layer-Common) and corresponding to the pixel dielectric layer (that is, dielectric layer G and dielectric layer R) of pixel G and pixel R.
For structure as shown in Figure 3, it should be noted that in actual applications, the light path needed for the blue light that pixel B sends is the shortest, the light path of the blue light that the light path needed for the green glow that pixel G sends sends more than pixel B, and the light path needed for the HONGGUANG that pixel R sends is the longest. It is based on this, thus, light path needed for the blue light that can send according to pixel B, unified media layer (namely " dielectric layer-Common " in Fig. 3) is set in all pixels, simultaneously because the light path needed for pixel G and pixel R is all higher than the light path needed for pixel B, therefore, it can respectively according to the light path needed for pixel G and pixel R, pixel G and pixel B arrange dielectric layer G and dielectric layer R. Finally so that the thickness of each pixel dielectric layer and the thickness shown in Fig. 2 b��2d match.
Correspondingly, in the present embodiment, a wherein surface of the metal polar plate of pixel arranges dielectric layer, it is possible to adopt following steps:
Step 41: transparent inorganic material is provided;
Step 42: by film-forming process, transparent inorganic material is formed on the metal polar plate of pixel the unified media layer setting thickness;
Step 43: for specific pixel, uses transparent inorganic material to form pixel dielectric layer so that unified media layer and pixel dielectric layer are collectively forming dielectric layer in specific pixel on unified media layer.
For above-mentioned steps, transparent inorganic material can include but not limited to: the material that the light transmittance such as silicon oxide, silicon nitride is good, in order to the transmission of light.
Above-mentioned film-forming process may include that hot evaporation process, Atomic layer deposition (AtomicLayerDeposition, ALD) technique etc.
Just it has been observed that the light path of pixel G and pixel R is typically larger than the light path of pixel B, so, after being provided with unified media layer, also need to be respectively provided with dielectric layer G and dielectric layer R on pixel G and pixel R, in other words, in above-mentioned steps, described specific pixel includes pixel G and pixel R.
The foregoing is only embodiments of the invention, be not limited to the present invention. To those skilled in the art, the present invention can have various modifications and variations. Any amendment of making within all spirit in the present invention and principle, equivalent replacement, improvement etc., should be included within scope of the presently claimed invention.
Claims (13)
1. an OLED, it comprises public hole injection layer and different types of pixel, comprises anode in different types of pixel, and described public hole injection layer is connected with the anode of various types of pixel respectively, it is characterised in that:
The thickness of described public hole injection layer is less than setting threshold value so that the resistance of described public hole injection layer is more than setting resistance value.
2. OLED as claimed in claim 1, it is characterised in that the thickness of described public hole injection layer is 1��100nm.
3. OLED as claimed in claim 1, it is characterised in that described anode includes: metal polar plate, dielectric layer, transparency conducting layer;
Described dielectric layer is for transmitting the light sent by pixel, and this dielectric layer is located at described metal polar plate surface, described transparency conducting layer cover described dielectric layer.
4. OLED as claimed in claim 3, it is characterised in that the light path of the light that the described thickness of dielectric layers in the anode of variety classes pixel sends with different pixels respectively matches.
5. OLED as claimed in claim 3, it is characterised in that the area of described dielectric layer more than this dielectric layer the area of organic luminous layer within the pixel.
6. such as the OLED as described in arbitrary in claim 3 to 5, it is characterised in that the material of described dielectric layer includes: ultraviolet light UV solidifies polymer.
7. the manufacture method of an OLED, it is characterised in that described method includes:
The anode of variety classes pixel is provided;
Anode surface in variety classes pixel is deposited with and forms thickness less than the public hole injection layer setting threshold value.
8. the manufacture method of OLED as claimed in claim 7, it is characterised in that form thickness less than the public hole injection layer setting threshold value, specifically include:
Form the public hole injection layer that thickness is 1��100nm.
9. the manufacture method of OLED as claimed in claim 7, it is characterised in that the anode of variety classes pixel is provided, specifically includes:
Metal polar plate is provided for any pixel;
A wherein surface of the metal polar plate of this pixel arranges dielectric layer;
The dielectric layer of this pixel arranges transparency conducting layer, forms the anode of this pixel.
10. the manufacture method of OLED as claimed in claim 9, it is characterised in that dielectric layer is set on a wherein surface of the metal polar plate of this pixel, specifically includes:
The mixed solvent solidifying polymer containing ultraviolet light UV is provided;
Described mixed solvent flash distillation is formed on a wherein surface of the metal polar plate of this pixel deielectric-coating;
Use UV illumination that deielectric-coating is solidify to form dielectric layer.
11. the manufacture method of OLED as claimed in claim 9, it is characterised in that dielectric layer is set on a wherein surface of the metal polar plate of this pixel, specifically includes:
Transparent inorganic material is provided;
By film-forming process, transparent inorganic material is formed on the metal polar plate of pixel the unified media layer setting thickness;
For specific pixel, unified media layer use transparent inorganic material form pixel dielectric layer so that unified media layer and pixel dielectric layer are collectively forming dielectric layer in specific pixel.
12. the manufacture method of OLED as claimed in claim 11, it is characterised in that described transparent inorganic material includes: at least one in silicon oxide, silicon nitride;
Described film-forming process includes: at least one in heat evaporation, Atomic layer deposition ALD;
Described specific pixel includes pixel G and pixel R.
13. the manufacture method such as the OLED as described in arbitrary in claim 9 to 11, it is characterised in that the light path of the light that the thickness of described dielectric layer and this pixel send matches.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511029123.9A CN105633290A (en) | 2015-12-31 | 2015-12-31 | OLED device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511029123.9A CN105633290A (en) | 2015-12-31 | 2015-12-31 | OLED device and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105633290A true CN105633290A (en) | 2016-06-01 |
Family
ID=56048017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201511029123.9A Pending CN105633290A (en) | 2015-12-31 | 2015-12-31 | OLED device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105633290A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108682750A (en) * | 2018-06-13 | 2018-10-19 | 江苏集萃有机光电技术研究所有限公司 | Organic Light Emitting Diode and preparation method thereof |
| CN109860260A (en) * | 2019-02-28 | 2019-06-07 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN110021240A (en) * | 2019-05-05 | 2019-07-16 | 清华大学 | Screen design method and device based on the matched OLED of light path |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1917253A (en) * | 2006-08-01 | 2007-02-21 | 友达光电股份有限公司 | Organic electro photoluminescence component, and method for slowing up electric leakage in side direction |
| CN101257035A (en) * | 2007-02-26 | 2008-09-03 | 统宝光电股份有限公司 | Organic electroluminescence display device with top luminous |
| CN100502088C (en) * | 2004-02-19 | 2009-06-17 | 三星移动显示器株式会社 | Method of fabricating organic light emitting display device |
| CN104112823A (en) * | 2014-06-30 | 2014-10-22 | 上海天马有机发光显示技术有限公司 | White organic light-emitting device |
| KR20150125158A (en) * | 2014-04-29 | 2015-11-09 | 엘지디스플레이 주식회사 | Organic light emitting device |
-
2015
- 2015-12-31 CN CN201511029123.9A patent/CN105633290A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100502088C (en) * | 2004-02-19 | 2009-06-17 | 三星移动显示器株式会社 | Method of fabricating organic light emitting display device |
| CN1917253A (en) * | 2006-08-01 | 2007-02-21 | 友达光电股份有限公司 | Organic electro photoluminescence component, and method for slowing up electric leakage in side direction |
| CN101257035A (en) * | 2007-02-26 | 2008-09-03 | 统宝光电股份有限公司 | Organic electroluminescence display device with top luminous |
| KR20150125158A (en) * | 2014-04-29 | 2015-11-09 | 엘지디스플레이 주식회사 | Organic light emitting device |
| CN104112823A (en) * | 2014-06-30 | 2014-10-22 | 上海天马有机发光显示技术有限公司 | White organic light-emitting device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108682750A (en) * | 2018-06-13 | 2018-10-19 | 江苏集萃有机光电技术研究所有限公司 | Organic Light Emitting Diode and preparation method thereof |
| CN109860260A (en) * | 2019-02-28 | 2019-06-07 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN110021240A (en) * | 2019-05-05 | 2019-07-16 | 清华大学 | Screen design method and device based on the matched OLED of light path |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2743909B1 (en) | Pixel structure, pixel unit structure, display panel and display apparatus | |
| US10431774B2 (en) | Display unit, method for manufacturing the same and array substrate | |
| KR101997571B1 (en) | Organic light emitting display and method of manufacturing the same | |
| US9740073B2 (en) | Complex display device | |
| CN103545345A (en) | Display panel, manufacturing method of display panel and display device | |
| EP2592672B1 (en) | Organic light-emitting device and method for manufacturing same | |
| US20170084863A1 (en) | ORGANIC LIGHT EMTTING DEVICE AND METHOD FOR MANUFACTURING THE SAME (As Amended) | |
| CN104798222A (en) | Organic light-emitting element, and method for manufacturing same | |
| WO2016123916A1 (en) | Display substrate and manufacturing method thereof, and display device | |
| CN104205392A (en) | Optoelectronic device | |
| KR20140021052A (en) | Optoelectronic component and method for producing an optoelectronic component | |
| KR101650029B1 (en) | Light-emitting components and method for producing a light-emitting component | |
| CN105633290A (en) | OLED device and manufacturing method thereof | |
| CN103999250A (en) | Organic light-emitting device and method for manufacturing same | |
| KR20130046435A (en) | Organic electroluminescent element | |
| CN103098551A (en) | Electroluminescent element, display device and lighting device | |
| CN105280830B (en) | A kind of organic electroluminescence device and preparation method thereof, display device | |
| CN109378409B (en) | Electroluminescent device and manufacturing method thereof | |
| GB2570206A (en) | OLED lighting apparatus | |
| US20180175321A1 (en) | Transparent organic light emitting diode and method for manufacturing the same | |
| CN205104520U (en) | Organic electroluminescence device and display device | |
| CN108269946B (en) | Light emitting element | |
| CN102956677B (en) | A kind of OLED display and preparation method thereof | |
| CN106486604A (en) | A kind of manufacture method of the organic electroluminescence device of employing DLC | |
| CN100455153C (en) | Display of organic electroluminescence, and preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160601 |