CN105633276A - Memory cell based on magnetic alloy composite film, preparation method thereof and magnetic storage device comprising memory cell - Google Patents
Memory cell based on magnetic alloy composite film, preparation method thereof and magnetic storage device comprising memory cell Download PDFInfo
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Abstract
The invention provides a magnetic memory cell based on a magnetic alloy composite film. The magnetic memory cell comprises a first electrode layer, a first magnetic layer, an insulating tunneling layer, a second magnetic layer and a second electrode layer. The second magnetic layer is a magnetic alloy composite film. The magnetic alloy composite film comprises magnetic particles and an insulation spacer. The magnetic particles comprise a magnetic alloy. The insulation spacer is made of at least one material selected from metal oxide, metal nitride and metal nitrogen oxide. The magnetic particles are dispersed into the insulation spacer. The magnetic memory cell based on the magnetic alloy composite film according to the invention has advantages of high storage density, high storage speed and low power consumption. The embodiment of the invention furthermore provides a preparation method of the magnetic memory cell based on the magnetic alloy composite film, and a magnetic storage unit comprising the magnetic memory cell based on the magnetic alloy composite film.
Description
Technical field
The present invention relates to technical field of data storage, particularly relate to a kind of magnetic cell based on magnetic alloy laminated film and preparation method thereof and magnetic memory apparatus.
Background technology
STT-MRAM (SpinTransferTorque-MagneticRandomAccessMemory) is a kind of magnetic nonvolatile memory based on spin-transfer torque, have high density, at high speed, low-power consumption, life-span length and the advantage such as non-volatile, it is believed that be one of most promising " general " memorizer. STT-MRAM memory technology utilizes the STT effect that electric current produces to act on free layer (accumulation layer), and changes the direction of magnetization of free layer, thus producing high and low two resistance states in the memory unit, it is achieved the access of data.
Although STT-MRAM memory technology is better than other memory technologies in many aspects, but the read or write speed how improving memory element further remains the problem that application STT-MRAM technology needs to solve at present. On the one hand, improving write current and be favorably improved electric current density, being conducive to magnetization reversal within the specific limits, thus improving read or write speed; But on the other hand, write current is crossed conference and is caused metal interconnecting wires service life reduction (interconnection line electric current density should less than 107A/cm2), it is difficult to really realize the storage of reliable high density, additionally, the big power consumption of write current is also big.
Therefore, in STT-MRAM technology is applied, it is necessary to provide one can take into account memory density, and realize at a high speed, the magnetic cell of low-power consumption storage and preparation method thereof and magnetic memory apparatus.
Summary of the invention
Embodiments provide a kind of magnetic cell based on magnetic alloy laminated film and preparation method thereof and magnetic memory apparatus, memory density can be taken into account, and realize at a high speed, low-power consumption storage, in order to solve STT-MRAM storage in prior art can not take into account memory density, at a high speed, the problem of low-power consumption.
In first aspect, embodiments provide a kind of magnetic cell based on magnetic alloy laminated film, including:
First electrode layer, the first magnetosphere formed on described first electrode layer, the insulating tunneling layer formed on described first magnetosphere, the second magnetosphere formed on described insulating tunneling layer and formation the second electrode lay on described second magnetosphere;
Wherein, described second magnetosphere is magnetic alloy laminated film, described magnetic alloy laminated film includes magnetic-particle and insulating spacer, wherein, described magnetic-particle includes magnetic alloy, described magnetic alloy includes at least one in Fe, Co, Ni and Pt element, and described insulating spacer includes at least one in metal-oxide, metal nitride and metal oxynitride, and described magnetic-particle is dispersed in described insulating spacer.
In conjunction with first aspect, in the first possible embodiment of first aspect, described magnetic-particle contacts with the upper and lower rete being adjacent to described magnetic alloy laminated film.
In conjunction with the first possible embodiment of first aspect and first aspect, in the embodiment that the second of first aspect is possible, the containing ratio of described insulating spacer is the 20%��75% of described magnetic alloy laminated film cumulative volume; The mean diameter of described magnetic-particle is 5��40nm.
In conjunction with the embodiment that the second of first aspect and first aspect is possible, in the third possible embodiment of first aspect, the thickness of described magnetic alloy laminated film is 3��20nm.
In conjunction with the embodiment that the second of first aspect and first aspect is possible, in the 4th kind of possible embodiment of first aspect, described magnetic alloy also includes the one in Nd, Pd and B element.
In conjunction with first aspect, in the 5th kind of possible embodiment of first aspect, described metal-oxide is the oxide of Ti, Ta, Cu, Al, Si, Cr, Zr, Y, Ce, Mn, Zn or W; Described metal nitride is the nitride of Ti, Ta, Cu, Al, Si, Cr, Zr, Y, Ce, Mn, Zn or W; Described metal oxynitride is the nitrogen oxides of Ti, Ta, Cu, Al, Si, Cr, Zr, Y, Ce, Mn, Zn or W.
In conjunction with first aspect, in the 6th kind of possible embodiment of first aspect, the described magnetic cell based on magnetic alloy laminated film also includes being formed at the Pt layer between described second magnetosphere and described the second electrode lay or Pd layer.
In second aspect, the preparation method embodiments providing a kind of magnetic cell based on magnetic alloy laminated film, comprise the following steps:
Substrate is provided, is sequentially prepared over the substrate: the first electrode layer, the first magnetosphere, insulating tunneling layer, the second magnetosphere, and the second electrode lay, obtains magnetic storage medium;
Described magnetic storage medium is made annealing treatment at 300��600 DEG C, obtains the described magnetic cell based on magnetic alloy laminated film,
Wherein, described second magnetosphere is magnetic alloy laminated film, described magnetic alloy laminated film includes magnetic-particle and insulating spacer, wherein, described magnetic-particle includes magnetic alloy, described magnetic alloy includes at least one in Fe, Co, Ni and Pt element, and described insulating spacer includes at least one in metal-oxide, metal nitride and metal oxynitride, and described magnetic-particle is dispersed in described insulating spacer.
In conjunction with second aspect, in the first possible embodiment of second aspect, described magnetic-particle contacts with the upper and lower rete being adjacent to described magnetic alloy laminated film.
In conjunction with in the first possible embodiment of second aspect and second aspect, in the embodiment that the second of second aspect is possible, the containing ratio of described insulating spacer is the 20%��75% of described magnetic alloy laminated film cumulative volume; The mean diameter of described magnetic-particle is 5��40nm.
In conjunction with the embodiment that the second of second aspect and second aspect is possible, in the third possible embodiment of second aspect, the thickness of described magnetic alloy laminated film is 3��20nm.
In conjunction with the embodiment that the second of second aspect and second aspect is possible, in the 4th kind of possible embodiment of second aspect, described magnetic alloy also includes the one in Nd, Pd and B element.
In conjunction with second aspect, in the 5th kind of possible embodiment of second aspect, described metal-oxide is the oxide of Ti, Ta, Cu, Al, Si, Cr, Zr, Y, Ce, Mn, Zn or W; Described metal nitride is the nitride of Ti, Ta, Cu, Al, Si, Cr, Zr, Y, Ce, Mn, Zn or W; Described metal oxynitride is the nitrogen oxides of Ti, Ta, Cu, Al, Si, Cr, Zr, Y, Ce, Mn, Zn or W.
In conjunction with second aspect, in the 6th kind of possible embodiment of second aspect, the described magnetic cell based on magnetic alloy laminated film also includes being formed at the Pt layer between described second magnetosphere and described the second electrode lay or Pd layer.
In the third aspect, embodiments provide a kind of magnetic memory apparatus, including based on the magnetic cell of magnetic alloy laminated film, the read/write circuit providing read-write voltage for described magnetic cell and gate transistor, the described magnetic cell based on magnetic alloy laminated film includes:
First electrode layer, the first magnetosphere formed on described first electrode layer, the insulating tunneling layer formed on described first magnetosphere, the second magnetosphere formed on described insulating tunneling layer and formation the second electrode lay on described second magnetosphere;
Wherein, described second magnetosphere is magnetic alloy laminated film, described magnetic alloy laminated film includes magnetic-particle and insulating spacer, wherein, described magnetic-particle includes magnetic alloy, described magnetic alloy includes at least one in Fe, Co, Ni and Pt element, and described insulating spacer includes at least one in metal-oxide, metal nitride and metal oxynitride, and described magnetic-particle is dispersed in described insulating spacer.
Embodiments provide a kind of magnetic cell based on magnetic alloy laminated film, memory density can be taken into account, and realize high speed, low-power consumption storage. The thin magnetic film that magnetic alloy laminated film in this magnetic cell adopts from traditional free layer (the second magnetosphere in the corresponding embodiment of the present invention) is different, traditional thin magnetic film adopts continuous print, pure thin magnetic film, without insulant, and the magnetic alloy laminated film that the present invention adopts has insulating spacer, magnetic alloy is dispersed in insulating spacer with the form of magnetic-particle, due to insulating spacer employing is electric conductivity extreme difference or non electrically conductive material, and magnetic-particle is only effective conductive region; Therefore, the real area that electric current flows through in magnetic alloy laminated film less than the area of whole magnetic alloy laminated film, i.e. the area less than whole magnetic cell (i.e. magnetic tunnel-junction, MTJ); Relatively, when identical MTJ area, flowing through the current density ratio of magnetic alloy nanometer in magnetic alloy laminated film, to flow through the electric current density of continuous pure thin magnetic film higher.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, the accompanying drawing used required in embodiment or description of the prior art will be briefly described below, it should be evident that the accompanying drawing in the following describes is the part accompanying drawing that the embodiment of the present invention provides.
Fig. 1 is the structural representation of the memory element 20 based on magnetic alloy laminated film that the embodiment of the present invention provides;
Fig. 2 is the structural representation of the second magnetosphere 204 of the memory element 20 based on magnetic alloy laminated film that the embodiment of the present invention provides;
Fig. 3 is the flow chart preparing the STT-MRAM memory element based on magnetic alloy laminated film that the embodiment of the present invention provides;
Fig. 4 is the memory element based on magnetic alloy laminated film of embodiment of the present invention offer and existing common storage unit write performance comparing result;
Fig. 5 is the transmission electron microscope figure of the magnetic alloy laminated film that the embodiment of the present invention provides;
Fig. 6 is the detailed diagram of embodiment of the present invention STT-MRAM device 001.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.
Embodiment 1
In conjunction with Fig. 1, embodiments provide a kind of memory element 20 based on magnetic alloy laminated film, including the first electrode layer 201/ first magnetosphere 202/ insulating tunneling layer 203/ second magnetosphere 204/ the second electrode lay 205 that lamination successively is arranged. As described in the present invention, symbol "/" all represents between each layer to be that lamination arranges structure successively.
Wherein, described second magnetosphere 204 is magnetic alloy laminated film, described magnetic alloy laminated film includes magnetic-particle and insulating spacer, wherein, described magnetic-particle includes magnetic alloy, described magnetic alloy includes at least one in Fe, Co, Ni and Pt element, and described insulating spacer includes at least one in metal-oxide, metal nitride and metal oxynitride, and described magnetic-particle is dispersed in described insulating spacer.
In the embodiment of the present invention, described magnetic-particle contacts with the upper and lower rete being adjacent to described magnetic alloy laminated film. In this embodiment, described insulating spacer not exclusively embeds described magnetic-particle, electric current can be made effectively via magnetic-particle, and be substantially not passed through insulating spacer. The magnetic-particle of each and upper and lower rete admittance is an independent magnetic upset unit, and now, the magnetic alloy laminated film that the embodiment of the present invention provides can regard the set of multiple magnetic storage unit as. Therefore, meet the definition of magnetic tunnel-junction based on the magnetic cell 20 of magnetic alloy laminated film, when it is as mram memory cell, can guarantee that device performance has controllability, homogeneity and reliability.
In conjunction with Fig. 2, the structural representation of the second magnetosphere 204 of the memory element 20 of the magnetic alloy laminated film provided for the embodiment of the present invention, described second magnetosphere 204 is magnetic alloy laminated film, including magnetic-particle and insulating spacer.
In the embodiment of the present invention, described magnetic-particle is cylindrical particle. Described magnetic-particle is preferably magnetic crystal grain, and described magnetic crystal grain is columnar grain.
In the embodiment of the present invention, the containing ratio of described insulating spacer is the 20%��75% of described magnetic alloy laminated film cumulative volume. In this embodiment, scope (20%��75%) residing for described insulating spacer containing ratio can suppress the generation of spheric grain, magnetic alloy is made to take at the column structure grown continuously along the direction vertical relative to face, size distribution is relatively concentrated, shape is more uniform, the good magnetic-particle of form to be conducive to acquisition, realize good magnetic rollover effect, and can fully ensure that the MRAM cell array based on it has repeatability and homogeneity; Add insulating spacer, then insulative spacer material is not only at magnetic crystal boundary, also precipitates out on the surface of magnetic crystal superfluously, so that do not meet the feature of magnetic tunnel-junction based on its device, memory element readwrite performance cannot effectively control and repeat; Very few interpolation insulative spacer material does not then reach good isolation effect.
In the embodiment of the present invention, described magnetic-particle is discontinuous distribution in described magnetic alloy laminated film; In other embodiments of the present invention, described insulating spacer is discontinuous distribution in described magnetic alloy laminated film.
In the embodiment of the present invention, the mean diameter of described magnetic-particle is 5��15nm. In other embodiments of the present invention, the mean diameter of described magnetic-particle is preferably 5��10nm. In magnetic alloy laminated film in this embodiment, the magnetic-particle of typical structure 5��10nm is dispersed in insulating spacer; Or insulating spacer Granular composite is in the magnetic alloy material of typical structure 5��10nm. In other embodiments of the present invention, the mean diameter of described magnetic-particle more preferably 5nm. Magnetic alloy (typical in CoPt, FePt) has high heat stability and perpendicular magnetic anisotropy under 5nm crystallite dimension.
In the embodiment of the present invention, the described spacing between magnetic-particle is not more than 3nm. In other embodiments of the present invention, the described spacing between magnetic-particle is not more than 1nm.
In the embodiment of the present invention, the thickness of described magnetic alloy laminated film is 5��9nm. In this embodiment, this thickness is that after the magnetic alloy laminated film annealing of 5��9nm, the size of magnetic-particle is subject to the restriction of film thickness, and distribution is relatively concentrated, shape is more uniform, border isolation effect is better. For some magnetic alloys such as CoPt, FePt, after the magnetic alloy laminated film annealing more than 9nm, may result in the situations such as magnetic alloy particle size distribution is uneven. Magnetic alloy laminated film more than 9nm, being distributed in free layer magnetic alloy granular size in magnetic tunnel-junction there is spatially skewness, this can directly influence the homogeneity of prepared mram memory cell array so that it is not used to storage or memory property reduces. Magnetic alloy laminated film magnetic particle size lower than 9nm is evenly distributed, and it can be effectively ensured the memory cell array that thin film formed after semiconductor technology patterning process and have the homogeneity of form, and then ensures homogeneity and the stability of its performance. For different magnetic alloys, according to specific needs, the magnetic alloy laminated film of the present invention can be prepared as different-thickness. Even if adopting same magnetic alloy, if the content of magnetic alloy is different, the magnetic alloy laminated film of the present invention is likely to prepares into different thickness. This is because, along with the raising of the content of insulating spacer, after the thickness of magnetic alloy laminated film exceedes certain thickness, the magnetic-particle of annealing gained can be divided into two-layer or be divided into chondritic to drop low-surface-energy. Such as, for FePt-SiOx magnetic alloy laminated film, when the volume amount of SiOx is FePt-SiOx film cumulative volume 37%, when the thickness of FePt-SiOx film is 16nm, FePt alloy granule also has more complete cylindrical particle structure; And when the volume amount of SiOx brings up to the 45% of FePt-SiOx film cumulative volume; in the FePt-SiOx film of 16nm; single FePt alloy granule there will be separation; the FePt alloy granule of more complete column can not be prepared; and only when the thickness of FePt-45vol.%SiOx film is as thin as 9nm, FePt alloy is just formed intactly, of uniform size, the good column FePt alloy granule of boundary separates effect.
In other embodiments of the present invention, the thickness of described magnetic alloy laminated film is less than 5nm.
In the embodiment of the present invention, described magnetic alloy also includes the one in Nd, Pd and B element. Amorphous alloy with B can improve the flatness of tunnel layer MgO membrane layer in magnetic tunnel-junction, and improves the change rate of magnetic reluctance of the described magnetic cell 20 based on magnetic alloy laminated film. In a preferred embodiment of the invention, described magnetic alloy is FeCo, FeNi, CoNi, NiPt, FeNiPt, FePt, CoPt, CoFePt, CoNiPt, NdFeB, FePd, CoFeB, CoNiB or FeNiB alloy.
In the embodiment of the present invention, metal-oxide in described insulating spacer, metal nitride and metal oxynitride are insulant. Owing to insulating spacer is non-conductive or electric conductivity is only small, flow through area that the electric current of memory element flows through in the free layer face less than whole memory element, therefore, can when ensureing that in by magnetic alloy laminated film (free layer), the electric current density of magnetic-particle is constant, reduce and flow through the electric current selecting transistor, thus reducing the size selecting transistor. The insulating spacer adopted can isolate magnetic alloy, contributes to being formed the magnetic-particle of discontinuous distribution. Specifically, described metal-oxide can be the oxide of Ti, Ta, Cu, Al, Si, Cr, Zr, Y, Ce, Mn, Zn or W; Described metal nitride can be the nitride of Ti, Ta, Cu, Al, Si, Cr, Zr, Y, Ce, Mn, Zn or W; Described metal oxynitride can for the nitrogen oxides of Ti, Ta, Cu, Al, Si, Cr, Zr, Y, Ce, Mn, Zn or W.
In magnetic alloy laminated film provided by the invention, described magnetic alloy and insulating spacer can adopt different, preferably combination as follows:
In embodiments of the present invention, described magnetic alloy is the one in NdFeB, CoPt, FePt, CoFePt and FePd alloy, and described insulating spacer is at least one in TiNx, TaNx, CuNx, AlNx, SiNx and WNx. Under this optimum condition, described insulating spacer can further be preferably at least one in CuNx, AlNx, SiNx and TiNx, the volume ratio of described magnetic alloy and described insulating spacer more preferably 1��3:1, the thickness of magnetic alloy laminated film is more preferably not higher than 5nm; Keeping the crystallite dimension forming about 5nm under this condition, the magnetic alloy granule under this crystallite dimension has high heat stability and perpendicular magnetic anisotropy.
In other embodiments of the present invention, described magnetic alloy is the one in CoFeB, CoNiB and FeNiB alloy, and described insulating spacer is at least one in SiOx, TiOx, CrOx, AlOx, TaOx, ZrOx, YOx, CeOx, MnOx, TiOx and ZnOx. Under this optimum condition, the volume ratio of described magnetic alloy and described insulating spacer more preferably 2��3:1, the thickness of magnetic alloy laminated film is more preferably not higher than 5nm; Keeping the crystallite dimension forming about 5nm under this condition, the magnetic alloy granule under this crystallite dimension has high heat stability and perpendicular magnetic anisotropy.
In an alternative embodiment of the invention, described magnetic alloy laminated film can be FePt-Y film, and wherein, Y is AlOx, TiOx or TaOx; Described magnetic alloy laminated film can also be FePt-Y film, and Y is the volume amount of TiOx or TaOx, Y is the 20% of FePt-Y film cumulative volume; Described magnetic alloy laminated film can be Fe55Pt45-Y film, Y is the volume amount of TaOx, Y is the 20% of FePt-Y film cumulative volume. In magnetic alloy laminated film provided by the invention, the insulating spacer TaOx of doping contributes to reducing the crystallite dimension of FePt magnetic-particle.
In an alternative embodiment of the invention, described magnetic alloy laminated film is FePt-Y film, and wherein, described magnetic-particle is for having L10The crystal grain of the FePt alloy of structure, Y is at least one in SiOx, TiOx, CrOx, AlOx, TaOx, ZrOx, YOx, CeOx, MnOx, TiOx and ZnOx.
In an alternative embodiment of the invention, described magnetic alloy laminated film is CoPt-X film, and wherein, described magnetic-particle is for having L10Structure or L11The crystal grain of the CoPt alloy of structure, Y is at least one in SiOx, TiOx, CrOx, AlOx, TaOx, ZrOx, YOx, CeOx, MnOx, TiOx and ZnOx.
L10The FePt alloy of type crystal structure and L10Or L11The CoPt alloy of type crystal structure is respectively provided with higher magnetic anisotropy.
In an alternative embodiment of the invention, described magnetic alloy laminated film is CoFe-SiOx film, and wherein, the amount of SiOx is the 32%��42% of CoFe-SiOx film cumulative volume; It is highly preferred that the amount of described SiOx is 32% or 42%.
In the embodiment of the present invention, the described magnetic cell 20 based on magnetic alloy laminated film also includes being formed at the Pt layer between described second magnetosphere 204 and described the second electrode lay 205 or Pd layer. Pt layer between described second magnetosphere 204 and described the second electrode lay 205 or Pd layer can strengthen the perpendicular magnetic anisotropy of the second magnetosphere 204. In embodiments of the present invention, the thickness being formed at the Pt layer between described second magnetosphere 204 and described the second electrode lay 205 or Pd layer is 3��100nm.
In the embodiment of the present invention, described first magnetosphere 202 includes CoFeB layer that lamination successively arranges, ruthenium (Ru) layer, ferro-cobalt (CoFe) layer, and wherein, CoFe layer is arranged on the first electrode layer 201; But the material of described first magnetosphere 202 is not limited to this. In the embodiment of the present invention, the thickness of described first magnetosphere 202 is 1��20nm.
In the embodiment of the present invention, the described magnetic cell 20 based on magnetic alloy laminated film also includes being formed at the IrMn layer between described first magnetosphere 202 and described first electrode layer 201 or FeMn layer. The thickness of described IrMn layer or FeMn layer can be 2��20nm. Described IrMn layer and the first magnetosphere 202 or described FeMn layer and the first magnetosphere 202 form antiferromagnetic pinning.
In the embodiment of the present invention, the described first magnetospheric direction of magnetization of magnetic is fixed, as based on the fixed layer of magnetic cell 20 of magnetic alloy laminated film, reference layer or pinning layer; The direction of magnetization of described second magnetosphere 204 can rotate freely, as the free layer of the magnetic cell 20 based on magnetic alloy laminated film. In other embodiments of the present invention, the direction of magnetization of described second magnetosphere 204 and the first magnetosphere 202 is parallel or non-parallel by fixed magnetization. In the embodiment of the present invention, the easy magnetizing axis of described magnetic alloy laminated film is perpendicular to face.
In the embodiment of the present invention, the thickness of described insulating tunneling layer 203 is 10��25 angstroms. Insulating tunneling layer 203 is sufficiently thin, when the magnetic cell 20 based on magnetic alloy laminated film is applied electric current so that electronics can tunnel holing through. The material of described insulating tunneling layer 203 includes magnesium oxide (MgO), aluminium oxide (Al2O3), aluminium nitride (AlN), aluminum oxynitride (AlNO) or other suitable oxides, nitride or nitrogen oxides. After oxide that described insulating tunneling layer 203 adopts, nitride or nitrogen oxides are preferably capable making the alloy in magnetic-particle take proper orientation, annealing, easy magnetizing axis is perpendicular to the material of face, it does not have limit especially.
Specifically, in embodiments of the present invention, the material of described insulating tunneling layer 203 is MgO, and described MgO is (100) orientation. The MgO of (100) orientation adopted can be inclined to for the extension providing certain that formed of magnetic alloy laminated film, thus reaching to control the purpose of orientation of easy magnetization axis, the MgO of (100) orientation deposits FePt/Y magnetic alloy laminated film, the FePt magnetic-particle of (001) orientation can be prepared, L1 after annealing, can be prepared0The FePt magnetic-particle of structure.
In the embodiment of the present invention, the described magnetic cell 20 based on magnetic alloy laminated film also includes the Seed Layer being formed between described first electrode layer 201 and described first magnetosphere 202. The thickness of described Seed Layer can be 1��50nm. The material that described Seed Layer adopts can be CoCr, CoCrRu, Ru, Pt, Pd, Rh, Ta, TiC or AlN. Specifically, in the present embodiment, described Seed Layer is (Ta/Ru)5(5nm)/(CoFe/Ta)2Thin film, under be designated as the number of plies of corresponding thin film.
In the embodiment of the present invention, the magnetic cushion layer that the described magnetic cell 20 based on magnetic alloy laminated film also includes being formed between described Seed Layer and described first magnetosphere 202 is formed at the magnetic cushion layer between described Seed Layer and described first magnetosphere 202. The thickness of described magnetic cushion layer can be 1��4nm. The material that described magnetic cushion layer adopts is CoFe, FeCoB, FeAlN, FeAlSi, FeNi, CoZrNb or FeTaN alloy, but is not limited to this. Specifically, in the present embodiment, described magnetic cushion layer is (FeCoB/Ta) n thin film, and wherein, n is the number of plies of thin film, and the span of n is 2��5.
In the embodiment of the present invention, the thickness of described first electrode layer 201 is 10��100nm, and the thickness of described the second electrode lay 205 is 10��100nm, and the material that described first electrode layer 201 and the second electrode lay 205 adopt is Cu, Au or Pt, but is not limited to this.
The embodiment of the present invention provides the magnetic cell 20 based on magnetic alloy laminated film, magnetic alloy laminated film owing to adopting is discontinuous thin film, magnetic alloy is dispersed in insulating spacer with the form of magnetic-particle, owing to the live part of conduction is magnetic-particle, compare traditional continuous pure thin magnetic film, when memory cell area is identical, in magnetic alloy laminated film provided by the invention, the electric current density of magnetic alloy nanometer is higher. Therefore, compare existing STT-MRAM magnetic tunnel-junction (adopting the pure thin magnetic film of continuous print), under identical write current and storage state, the present invention provides the magnetic cell 20 based on magnetic alloy laminated film can take into account memory density, and realizes high speed, low-power consumption storage.
Common memory element (such as magnetic tunnel-junction, MTJ) needs just to show significant spin-transfer torque effect STT (SpinTransferTorque) under 100 nanoscales. And in a structure of the in-vention, it is magnetic-particle (yardstick is much smaller than 100 nanometers) due to what synthetic free layer actually occurred upset, therefore, this structure allows to show the effect of spin-transfer torque under bigger free layer size, such as, the size of free layer can at 500 nanometers. This greatly reduces the manufacture difficulty of STT-RAM memory element. Comparing with memory element existing, that free layer is of a size of 45nm, magnetic alloy laminated film of the present invention can obtain and the suitable power consumption of existing 45nm size and writing speed under 65nm size so that the difficulty of preparation technology be greatly lowered.
Embodiment 2
In conjunction with Fig. 3, the preparation method embodiments providing a kind of memory element 20 based on magnetic alloy laminated film, comprise the following steps: under argon atmosphere, adopt magnetron sputtering method on the substrate 30 successively sputtering sedimentation prepare first electrode layer the 201, first magnetosphere 202, insulating tunneling layer the 203, second magnetosphere 204 and the second electrode lay 205, concrete steps include:
Step 101: providing substrate 30, the material of described substrate 30 is Si/SiOx, wherein SiOxThickness is 100nm, and underlayer temperature is 100 DEG C;
Step 102: prepare the first electrode layer 201 on the substrate 30, target is Au, and the thickness of the first electrode layer 201 is 100nm;
Step 103: prepare the first magnetosphere 202 on the first electrode layer 201, target is CoFeB, and the thickness of the first magnetosphere 202 is 3nm;
Step 104: prepare insulating tunneling layer 203 on the first magnetosphere 202, target is MgO, and the thickness of insulating tunneling layer 203 is 1.5nm;
Step 105: prepare the second magnetosphere 204 on insulating tunneling layer 203, target is FePt target and Ta2O5Target, adjusts cosputtering power so that the volume fraction of FePt-TaOx respectively 80% and 20% in prepared magnetic alloy laminated film, is expressed as FePt-20vol.%TaOx, and the thickness of the second magnetosphere 204 is 5nm;
Step 106: prepare the second electrode lay 205 on the second magnetosphere 204, obtain magnetic storage medium, wherein, target is Au, and the thickness of the second electrode lay 205 is 100nm; Obtain magnetic storage medium;
Step 107: under vacuum condition, anneals the magnetic storage medium of step (106) gained 45 minutes at 300 DEG C, obtains described a kind of memory element 20 based on magnetic alloy laminated film;
Wherein, in described step 101��106, the back end vacuum of sputtering chamber is 1*10-7Pa; In step 104, the noble gas air pressure adopted during sputtering insulating tunneling layer 203 is 0.8Pa; The noble gas air pressure adopted in step 101��103 and step 105��106 is 0.3Pa;
In described step 107, the described structure based on the memory element 20 of magnetic alloy laminated film is the first electrode layer 201/ first magnetosphere 202/ insulating tunneling layer 203/ second magnetosphere 204/ the second electrode lay 205 that lamination is arranged successively, material respectively Au (100nm)/CoFeB (3nm)/MgO (1.5nm)/[FePt-20vol.%TaOx composite membrane (5nm)]/Au (100nm) of described first electrode layer 201/ first magnetosphere 202/ insulating tunneling layer 203/ second magnetosphere 204/ the second electrode lay 205, wherein, FePt magnetic-particle two ends in described second magnetosphere 204FePt-20vol.%TaOx composite membrane contact with insulating tunneling layer 203 and the second electrode lay 205 respectively, wherein, the mean diameter of described magnetic-particle is 8nm, spacing between magnetic-particle is not more than 3nm.
Fig. 2 is the structural representation of the second magnetosphere 204 of the memory element 20 based on magnetic alloy laminated film that the embodiment of the present invention provides, in the present embodiment, described second magnetosphere 204 is magnetic alloy laminated film, including FePt magnetic-particle and TaOx insulating spacer. Described based in the memory element 20 of magnetic alloy laminated film, described first magnetosphere 202 is fixed layer, and described second magnetosphere 204 is free layer.
The embodiment of the present invention adopts the method (based on MagsimusDeluxe7.0) of micro-magnetic simulation of finite element that the magnetization reversal of memory element magnetic alloy laminated film has been emulated, test result indicate that, the free layer of the memory element of magnetic alloy laminated film prepared by the embodiment of the present invention has good magnetization reversal effect.
It should be noted that in embodiment of the present invention, described annealing carries out under vacuum.
It should be noted that in embodiment of the present invention, adopt the mode of magnetron sputtering to be sequentially prepared each rete over the substrate, the underlayer temperature of described magnetron sputtering can be 20��500 DEG C; Described sputter temperature can be 410��450 DEG C; During described magnetron sputtering, the back end vacuum of sputtering chamber can be 1x10-6��1x10-8Pa; The air pressure of noble gas can be 0.3��0.8Pa; The noble gas adopted can be argon.
It should be noted that during described magnetron sputtering, the ratio of magnetic-particle and insulating spacer in magnetic alloy laminated film can be changed by adjusting the sputtering power of different target, and change the atomic ratio of each metal in magnetic-particle.
It should be noted that in embodiment of the present invention, the described method that magnetron sputtering prepares magnetic alloy laminated film that adopts is: adopt magnetic alloy target and insulating spacer target to carry out codeposition and prepare magnetic alloy laminated film. In another embodiment of the present invention, adopt the composite target material of magnetic alloy and insulant to carry out codeposition and prepare magnetic alloy laminated film. In other embodiments of the present invention, the described method that magnetron sputtering prepares magnetic alloy laminated film that adopts can also be: adopts magnetic metal simple substance target and insulant composite target material to carry out codeposition and prepare magnetic alloy laminated film, wherein, the component that metallic element is magnetic alloy in described magnetic metal simple substance target.
It should be noted that, in embodiment of the present invention, described first electrode layer the 201, first magnetosphere 202, insulating tunneling layer the 203, second magnetosphere 204 and the second electrode lay 205 can adopt other suitable techniques such as the mode of physical vapour deposition (PVD), evaporation coating, molecular beam epitaxy or ion beam depositing.
Fig. 4 be the embodiment of the present invention provide the memory element based on magnetic alloy laminated film with existing common storage unit write performance comparing result. Existing common storage unit differs only in the embodiment of the present invention 2: step 105 is: prepare the second magnetosphere 204 on insulating tunneling layer 203, and target is CoFeB target, and the thickness of the second magnetosphere 204 is 2nm. As shown in Figure 4, compare existing STT-MRAM magnetic tunnel-junction, under identical write current and storage state, the magnetic cell based on magnetic alloy laminated film that the embodiment of the present invention provides has the advantage that 1) there is higher storage efficiency, and storage speed faster; 2) under relatively low critical current density, realize the magnetic upset of memory element, under identical operating time and storage state (upset is more than 80%), the embodiment of the present invention provides the operation electric current based on the magnetic cell of magnetic alloy laminated film can reduce by one times. Therefore, the magnetic cell based on magnetic alloy laminated film that the embodiment of the present invention provides can take into account memory density, and realizes high speed, low-power consumption storage.
Based on embodiment 2, in other embodiments 3��7, it is also possible to by adopting other sputtering target materials, sputter temperature, annealing temperature and time, it is thus achieved that different component, magnetic alloy laminated film containing different mean diameter magnetic-particles, the visible table 1 of design parameter:
Table 1
Present invention also offers transmission electron microscope (TEM) figure of magnetic alloy laminated film prepared by embodiment 3, as shown in Figure 5. In embodiment 3��7, in described second magnetosphere 204 (magnetic alloy laminated film), FePt magnetic alloy is has L10The crystal grain of structure; The thickness of the second magnetosphere 204 is 5nm; The two ends of the magnetic alloy FePt in magnetic alloy laminated film contact with insulating tunneling layer 203 and the second electrode lay 205 respectively, and wherein, the spacing between magnetic-particle is not more than 3nm.
It should be noted that when preparing described second magnetosphere 204, when sputter temperature is higher (as: 410 DEG C or 450 DEG C), then can save or not save annealing steps.
Embodiment 8
The preparation method embodiments providing a kind of memory element 20 based on magnetic alloy laminated film, comprise the following steps: under argon atmosphere, adopt magnetron sputtering method on the substrate 30 successively sputtering sedimentation prepare first electrode layer the 201, first magnetosphere 202, insulating tunneling layer the 203, second magnetosphere 204 and the second electrode lay 205, concrete steps include:
Step 101: providing substrate 30, the material of described substrate 30 is Si/SiOx, wherein SiOxThickness is 100nm, and underlayer temperature is room temperature;
Step 102: prepare the first electrode layer 201 on the substrate 30, target is Pt, and the thickness of the first electrode layer 201 is 10nm;
Step 103: be sequentially prepared CoFe2nm/Ru0.8nm/CoFeB1.5nm layer on the first electrode layer 201, described CoFe2nm/Ru0.8nm/CoFeB1.5nm layer is the first magnetosphere 202;
Step 104: prepare insulating tunneling layer 203 on the first magnetosphere 202, target is Al2O3, the thickness of insulating tunneling layer 203 is 1nm;
Step 105: prepare the second magnetosphere 204 on insulating tunneling layer 203, target is (FePt) 75% (Ta2O5) 25% composite target material, adjust target as sputter power so that the volume fraction of FePt-TaOx respectively 75% and 25% in prepared magnetic alloy laminated film, be expressed as FePt-25vol.%TaOx, the thickness of the second magnetosphere 204 is 5nm;
Step 106: prepare the second electrode lay 205 on the second magnetosphere 204, obtain magnetic storage medium, wherein, target is Pt, and the thickness of the second electrode lay 205 is 10nm; Obtain magnetic storage medium;
Step 107: under vacuum condition, anneals the magnetic storage medium of step (106) gained 30 minutes at 450 DEG C, obtains described a kind of memory element 20 based on magnetic alloy laminated film,
Wherein, in described step 101��106, the back end vacuum of sputtering chamber is 1*10-6Pa; In step 104, the noble gas air pressure adopted during sputtering insulating tunneling layer 203 is 0.8Pa; The noble gas air pressure adopted in step 101��103 and step 105��106 is 0.3Pa;
In described step 107, the described structure based on the memory element 20 of magnetic alloy laminated film is the first electrode layer 201/ first magnetosphere 202/ insulating tunneling layer 203/ second magnetosphere 204/ the second electrode lay 205 that lamination is arranged successively, material respectively Pt (the 10nm)/CoFe2nm/Ru0.8nm/CoFeB1.5nm/Al of described first electrode layer 201/ first magnetosphere 202/ insulating tunneling layer 203/ second magnetosphere 204/ the second electrode lay 2052O3(1nm)/[FePt-25vol.%TaOx composite membrane (5nm)]/Pt (10nm), wherein, in described second magnetosphere 204FePt-25vol.%TaOx composite membrane, FePt magnetic-particle two ends contact with insulating tunneling layer 203 and the second electrode lay 205 respectively, wherein, the mean diameter of described magnetic-particle is 5nm, and the spacing between magnetic-particle is not more than 3nm.
Additionally, the present invention also can adopt different annealing conditions that the second magnetosphere 204 is annealed, preparation has the FePt-20vol.%TaOx composite membrane of different magnetic-particle particle diameter:
With reference to the preparation method of embodiment 2, described first magnetosphere 202, it is also possible to for the IrMn15nm/CoFe2nm/Ru0.8nm/CoFeB1.5nm layer of CoFeB layer (3nm) or lamination successively; Described insulating tunneling layer 203, it is also possible to for AlN (2.5nm) layer; Described the second electrode lay 205 can also be Cu (50nm) layer; Described magnetic storage medium also can be annealed 60 minutes at annealing 30 minutes or 300 DEG C at 600 DEG C.
In a preferred embodiment, in the gained memory element based on magnetic alloy laminated film, the material of described first electrode layer 201/ first magnetosphere 202/ insulating tunneling layer 203/ second magnetosphere 204/ the second electrode lay 205 can also be Cu (50nm)/IrMn15nm/CoFe2nm/Ru0.8nm/CoFeB1.5nm/MgO (1.5nm)/[FePt-20vol.%TaOx composite membrane (5nm)]/Cu (50nm) respectively, wherein, in described second magnetosphere 204FePt-20vol.%TaOx composite membrane, FePt magnetic-particle two ends contact with insulating tunneling layer 203 and the second electrode lay 205 respectively, wherein, the mean diameter of described magnetic-particle is 16nm, spacing between magnetic-particle is not more than 3nm.
In another preferred implementation of the present invention, in the gained memory element based on magnetic alloy laminated film, the material of described first electrode layer 201/ first magnetosphere 202/ insulating tunneling layer 203/ second magnetosphere 204/ the second electrode lay 205 can also be Au (100nm)/CoFeB (3nm)/MgO (1.5nm)/[FePt-20vol.%TaOx composite membrane (5nm)]/Au (100nm) respectively, wherein, in described second magnetosphere 204FePt-20vol.%TaOx composite membrane, FePt magnetic-particle two ends contact with insulating tunneling layer 203 and the second electrode lay 205 respectively, the mean diameter of described magnetic-particle is 5nm, spacing between magnetic-particle is not more than 3nm.
Embodiment 9
The preparation method that the invention provides a kind of memory element based on magnetic alloy laminated film, comprises the following steps:
Step 101��step 104: referring to embodiment 2;
Step 105-1: prepare the second magnetosphere 204 on insulating tunneling layer 203, target is FePt target and Ta2O5Target, adjusts cosputtering power so that the volume fraction of FePt-TaOx respectively 20% and 80% in prepared magnetic alloy laminated film, is expressed as FePt-80vol.%TaOx, and the thickness of the second magnetosphere 204 is 5nm;
Step 105-2: preparing Pt layer or Pd layer on the second magnetosphere 204, concrete thickness is any one shown in table 2:
Table 2
| Pt layer | Pt layer | Pt layer | Pd layer | Pd layer | Pd layer |
| 3nm | 50nm | 100nm | 3nm | 50nm | 100nm |
Step 106: prepare the second electrode lay 205 on layer by layer at Pt or Pd, obtain magnetic storage medium, wherein, target is Au, and the thickness of the second electrode lay 205 is 100nm; Obtain magnetic storage medium;
Step 107: under vacuum condition, anneals the magnetic storage medium of step (106) gained 30 minutes at 300 DEG C, obtains described a kind of memory element 20 based on magnetic alloy laminated film,
Wherein, the described structure based on the memory element 20 of magnetic alloy laminated film is the first electrode layer 201/ first magnetosphere 202/ insulating tunneling layer 203/ second magnetosphere 204/Pt layer/the second electrode lay 205 that lamination is arranged successively, material respectively Au (100nm)/CoFeB (3nm)/MgO (1.5nm)/[FePt-80vol.%TaOx composite membrane (5nm)]/Pt layer (the 3nm)/Au (100nm) of described first electrode layer 201/ first magnetosphere 202/ insulating tunneling layer 203/ second magnetosphere 204/Pt layer/the second electrode lay 205, wherein, in described second magnetosphere 204FePt-80vol.%TaOx composite membrane, FePt magnetic-particle two ends contact with insulating tunneling layer 203 and the second electrode lay 205 respectively.
Embodiment 10
The preparation method that the invention provides a kind of memory element based on magnetic alloy laminated film, comprise the following steps: under argon atmosphere, adopt magnetron sputtering method on the substrate 30 successively sputtering sedimentation prepare first electrode layer the 201, first magnetosphere 202, insulating tunneling layer the 203, second magnetosphere 204 and the second electrode lay 205, concrete steps include:
Step 101: providing substrate 30, the material of described substrate 30 is Si/SiOx, wherein SiOxThickness is 100nm, and underlayer temperature is 100 DEG C;
Step 102: prepare the first electrode layer 201 on the substrate 30, target is Au, and the thickness of the first electrode layer 201 is 100nm;
Step 103-1: be sequentially prepared Ta0.5nm/Ru0.5nm layer on the first electrode layer 201, repeats 5 times, and wherein, target is Ta simple substance target and Ru simple substance target, gained (Ta0.5nm/Ru0.5nm)5For Seed Layer, the thickness of described Seed Layer is 5nm;
Step 103-2: be sequentially prepared CoFe1.5nm/Ta0.5nm layer on the seed layer, repeats 2 times, and wherein, target is CoFe target and Ta simple substance target, gained (CoFe1.5nm/Ta0.5nm)2For magnetic cushion layer, the thickness of described magnetic cushion layer is 4nm;
Step 103: prepare the first magnetosphere 202 on magnetic cushion layer, target is CoFeB, and the thickness of the first magnetosphere 202 is 1.5nm;
Step 104��step 107: referring to embodiment 2, prepare the memory element 20 based on magnetic alloy laminated film;
Wherein, in described step 101��106, the back end vacuum of sputtering chamber is 1*10-7Pa; In step 104, the noble gas air pressure adopted during sputtering insulating tunneling layer 203 is 0.8Pa; The noble gas air pressure adopted in step 101��103 and step 105��106 is 0.3Pa;
In described step 107, the described structure based on the memory element 20 of magnetic alloy laminated film is the first electrode layer 201/ first magnetosphere 202/ insulating tunneling layer 203/ second magnetosphere 204/ the second electrode lay 205 that lamination is arranged successively, material respectively Au (100nm)/(Ta/Ru) of described first electrode layer 201/ Seed Layer (5nm)/magnetic cushion layer (4nm)/first magnetosphere 202/ insulating tunneling layer 203/ second magnetosphere 204/ the second electrode lay 2055(5nm)/(CoFe/Ta)2(4nm)/CoFeB (3nm)/MgO (1.5nm)/[FePt-20vol.%TaOx composite membrane (5nm)]/Au (100nm), wherein, in described second magnetosphere 204FePt-20vol.%TaOx laminated film, FePt magnetic-particle two ends contact with insulating tunneling layer 203 and the second electrode lay 205 respectively.
Embodiment 11
The invention provides a kind of storage device 001, described storage device 001 has magnetic tunnel-junction MJT, the memory element 20 based on magnetic alloy laminated film that described MTJ provides for the embodiment of the present invention 1, described storage device is spin transfer torque magnetoresistive random access (STT-MRAM) storage device 001, including: based on the memory element 20 of magnetic alloy laminated film, the read/write circuit 060 of read-write voltage is provided for described magnetic cell, and gate transistor 010, also include bit line 020, wordline 030, source electrode line 040, sense amplifier 050 and reference 070. as shown in Figure 6, the described memory element 20 based on magnetic alloy laminated film is the pinning layer (the first magnetosphere 203) separated by insulating tunneling layer 204 and free layer (the second magnetosphere 204205) is formed, and described pinning layer and each in described free layer can keep magnetic field or polarization. the direction of magnetization of described free layer can be inverted so that described pinning layer is parallel with the direction of magnetization of described free layer or antiparallel. the direction of magnetization depending on described pinning layer and free layer is changed by the resistance through the power path of described MTJ. as it is known, this resistance variations can be used for programming and read described storage device 001.
With reference to Fig. 6, the detailed diagram of its graphic extension STT-MRAM device 001, in conjunction with Fig. 6, the STT-MRAM device 001 read-write operation process that the embodiment of the present invention provides is as follows:
Gate transistor 010 is connected with wordline 030. Wordline 030 provides a wordline to select voltage to the grid of gate transistor 010 to activate gate transistor 010, so that memory element 20 can be written and read operation by bit line 020. One sense amplifier 050 1 input is connected with bit line 020, and another input is connected with reference circuits 070. After gate transistor is strobed, bipolarity write pulse/reading bias generator produces a bias current and passes through magnetic tunnel junction memory cell. Word-line signal makes transistor 010 gating, electric current can be allowed to flow through memory element 20 so that STT-MRAM device 001 has the logic state that can read or write.
Specifically, read/write circuit 060 produces write voltage between bit line 020 and source electrode line 040. Polarity according to the voltage between bit line 020 and source electrode line 040, the polarity of the free layer of memory element 20 can change and accordingly, logic state can be written to device 001. Equally, during read operation, read electric current between bit line 020 and source electrode line 040, flow through memory element 20. During reading, the voltage that sense amplifier 050 is produced by memory element 20 by comparing electric current and reference voltage determine the logic state of memory element 20. This logic state is corresponding to the signal of sense amplifier 050 outfan. Those skilled in the art can design the circuit of reservoir device 001 as required.
The magnetic memory apparatus that the embodiment of the present invention provides, including the magnetic cell based on magnetic alloy laminated film as described in the present embodiment of the invention, can take into account memory density, and realize high speed, low-power consumption storage.
It should be noted that embodiment provided herein is merely schematic. Those skilled in the art is it can be understood that arrive, and for convenience of description and succinctly, in the above-described embodiments, the description of each embodiment is all emphasized particularly on different fields, and does not have the part described in detail, it is possible to referring to the associated description of other embodiments in certain embodiment. The feature disclosed in the embodiment of the present invention, claim and accompanying drawing can be individually present and can also combine existence. The feature described in the form of hardware in embodiments of the present invention can be performed by software, and vice versa. Do not limit at this.
Claims (15)
1. the magnetic cell based on magnetic alloy laminated film, it is characterised in that including:
First electrode layer, the first magnetosphere formed on described first electrode layer, the insulating tunneling layer formed on described first magnetosphere, the second magnetosphere formed on described insulating tunneling layer and formation the second electrode lay on described second magnetosphere;
Wherein, described second magnetosphere is magnetic alloy laminated film, described magnetic alloy laminated film includes magnetic-particle and insulating spacer, wherein, described magnetic-particle includes magnetic alloy, described magnetic alloy includes at least one in Fe, Co, Ni and Pt element, and described insulating spacer includes at least one in metal-oxide, metal nitride and metal oxynitride, and described magnetic-particle is dispersed in described insulating spacer.
2. the magnetic cell based on magnetic alloy laminated film as claimed in claim 1, it is characterised in that described magnetic-particle contacts with the upper and lower rete being adjacent to described magnetic alloy laminated film.
3. the magnetic cell based on magnetic alloy laminated film as claimed in claim 1, it is characterised in that the containing ratio of described insulating spacer is the 20%��75% of described magnetic alloy laminated film cumulative volume; The mean diameter of described magnetic-particle is 5��40nm.
4. the magnetic cell based on magnetic alloy laminated film as claimed in claim 1, it is characterised in that the thickness of described magnetic alloy laminated film is 3��20nm.
5. the magnetic cell based on magnetic alloy laminated film as claimed in claim 1, it is characterised in that described magnetic alloy also includes the one in Nd, Pd and B element.
6. the magnetic cell based on magnetic alloy laminated film as claimed in claim 1, it is characterised in that described metal-oxide is the oxide of Ti, Ta, Cu, Al, Si, Cr, Zr, Y, Ce, Mn, Zn or W; Described metal nitride is the nitride of Ti, Ta, Cu, Al, Si, Cr, Zr, Y, Ce, Mn, Zn or W; Described metal oxynitride is the nitrogen oxides of Ti, Ta, Cu, Al, Si, Cr, Zr, Y, Ce, Mn, Zn or W.
7. the magnetic cell based on magnetic alloy laminated film as claimed in claim 1, it is characterised in that the described magnetic cell based on magnetic alloy laminated film also includes being formed at the Pt layer between described second magnetosphere and described the second electrode lay or Pd layer.
8. the preparation method based on the magnetic cell of magnetic alloy laminated film, it is characterised in that comprise the following steps:
Substrate is provided, is sequentially prepared over the substrate: the first electrode layer, the first magnetosphere, insulating tunneling layer, the second magnetosphere, and the second electrode lay, obtains magnetic storage medium;
Described magnetic storage medium is made annealing treatment at 300��600 DEG C, obtains the described magnetic cell based on magnetic alloy laminated film;
Wherein, described second magnetosphere is magnetic alloy laminated film, described magnetic alloy laminated film includes magnetic-particle and insulating spacer, wherein, described magnetic-particle includes magnetic alloy, described magnetic alloy includes at least one in Fe, Co, Ni and Pt element, and described insulating spacer includes at least one in metal-oxide, metal nitride and metal oxynitride, and described magnetic-particle is dispersed in described insulating spacer.
9. the magnetic cell based on magnetic alloy laminated film as claimed in claim 8, it is characterised in that described magnetic-particle contacts with the upper and lower rete being adjacent to described magnetic alloy laminated film.
10. the magnetic cell based on magnetic alloy laminated film as claimed in claim 8, it is characterised in that the containing ratio of described insulating spacer is the 20%��75% of described magnetic alloy laminated film cumulative volume; The mean diameter of described magnetic-particle is 5��40nm.
11. the magnetic cell based on magnetic alloy laminated film as claimed in claim 8, it is characterised in that the thickness of described magnetic alloy laminated film is 3��20nm.
12. the magnetic cell based on magnetic alloy laminated film as claimed in claim 8, it is characterised in that described magnetic alloy also includes the one in Nd, Pd and B element.
13. the magnetic cell based on magnetic alloy laminated film as claimed in claim 8, it is characterised in that described metal-oxide is the oxide of Ti, Ta, Cu, Al, Si, Cr, Zr, Y, Ce, Mn, Zn or W; Described metal nitride is the nitride of Ti, Ta, Cu, Al, Si, Cr, Zr, Y, Ce, Mn, Zn or W; Described metal oxynitride is the nitrogen oxides of Ti, Ta, Cu, Al, Si, Cr, Zr, Y, Ce, Mn, Zn or W.
14. the magnetic cell based on magnetic alloy laminated film as claimed in claim 8, it is characterized in that, the described magnetic cell based on magnetic alloy laminated film also includes being formed at the Pt layer between described second magnetosphere and described the second electrode lay or Pd layer.
15. a magnetic memory apparatus, it is characterized in that, including based on the magnetic cell of magnetic alloy laminated film, the read/write circuit providing read-write voltage for described magnetic cell and gate transistor, the described magnetic cell based on magnetic alloy laminated film includes:
First electrode layer, the first magnetosphere formed on described first electrode layer, the insulating tunneling layer formed on described first magnetosphere, the second magnetosphere formed on described insulating tunneling layer and formation the second electrode lay on described second magnetosphere;
Wherein, described second magnetosphere is magnetic alloy laminated film, described magnetic alloy laminated film includes magnetic-particle and insulating spacer, wherein, described magnetic-particle includes magnetic alloy, described magnetic alloy includes at least one in Fe, Co, Ni and Pt element, and described insulating spacer includes at least one in metal-oxide, metal nitride and metal oxynitride, and described magnetic-particle is dispersed in described insulating spacer.
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