CN112397636B - Magnetic tunnel junction and method for reducing process fluctuation of free layer of magnetic tunnel junction - Google Patents
Magnetic tunnel junction and method for reducing process fluctuation of free layer of magnetic tunnel junction Download PDFInfo
- Publication number
- CN112397636B CN112397636B CN201910741890.4A CN201910741890A CN112397636B CN 112397636 B CN112397636 B CN 112397636B CN 201910741890 A CN201910741890 A CN 201910741890A CN 112397636 B CN112397636 B CN 112397636B
- Authority
- CN
- China
- Prior art keywords
- layer
- free layer
- magnetic
- tunnel junction
- free
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
Abstract
The invention provides a magnetic tunnel junction, which at least comprises a reference layer, a barrier layer, a magnetic buffer layer and a free layer which are sequentially stacked; wherein the magnetic buffer layer is more ductile than the free layer. The invention adds a thin magnetic buffer layer on the surface of the barrier layer, and provides a smoother substrate by utilizing the better ductility of the buffer layer, so that the uniformity of a subsequently deposited free layer film is better, and the TMR effect of a magnetic tunnel cannot be damaged.
Description
Technical Field
The invention relates to the technical field of magnetic random access memories, in particular to a magnetic tunnel junction and a method for reducing process fluctuation of a free layer of the magnetic tunnel junction.
Background
The magnetic random access memory has the advantages of long service life, low power consumption, nonvolatility and the like, and mainly switches between different resistances by turning the magnetization direction of the free layer to be parallel or antiparallel to the magnetization direction of the reference layer so as to erase and write data '0' or '1'.
Due to process fluctuations, the performance of all bits in a memory array may not be completely uniform, but rather may be distributed over a range that must be planned in advance during device design. Such process fluctuations also exist for magnetic random access memories, and the requirements and considerations for such process fluctuations vary for different parts of the magnetic tunnel junction.
The reference layer is stable enough during the operation of the device, and therefore has a coercivity large enough, so that the coercivity fluctuation is required to be above a certain critical threshold at a minimum value.
The switching of the magnetic random access memory between '0' and '1' is realized by the overturning of the free layer, so that the smaller the coercive force of the free layer is, the easier the overturning is, the smaller the required driving force is, and the lower the power consumption is; however, if the coercivity is too low, there is a risk that the free layer will be flipped by the read current/thermal perturbation, and thus the free layer must meet a certain thermal stability factor. The design of the device of the free layer has to meet certain requirements at the upper limit and the lower limit, and due to the existence of process fluctuation, when the device crosses the lower limit, part of bits have the problem of error erasing; when the cross is generated with the upper limit, the power consumption of the whole array can be improved, and the service life is reduced.
Disclosure of Invention
The magnetic tunnel junction and the method for reducing the process fluctuation of the free layer of the magnetic tunnel junction can improve the uniformity of the free layer and reduce the process fluctuation of the free layer.
In a first aspect, the present invention provides a magnetic tunnel junction, which at least includes a reference layer, a barrier layer, a magnetic buffer layer, and a free layer, which are sequentially stacked; wherein the magnetic buffer layer is more ductile than the free layer.
Optionally, the magnetic buffer layer is made of a material having a magnetic property stronger than that of the free layer.
Optionally, a thickness of the magnetic buffer layer is less than a thickness of the free layer.
Optionally, the ratio of the thickness of the buffer layer to the thickness of the free layer is 0.5/9-1.5/8.5.
Optionally, the magnetic buffer layer comprises one or a combination of Co, Fe, CoFe, FeB, CoFeB or Heusler alloy materials.
Optionally, the device further comprises an antiferromagnetically coupling layer and a pinning layer which are arranged in a laminated manner; the side surface of the antiferromagnetic coupling layer facing away from the pinned layer is in contact with the reference layer.
Optionally, the free layer comprises a first free layer, a coupling layer and a second free layer which are sequentially stacked, and one side of the first free layer, which faces away from the coupling layer, is in contact with the barrier layer; the materials of the first free layer and the second free layer are both magnetic materials.
The invention is designed aiming at the following conditions: the free layer is arranged at the magnetic tunnel junction of the uppermost layer, and due to the deposition of a multilayer film below the free layer, the surface flatness of the barrier layer is reduced after the barrier layer is deposited, and the process fluctuation of the magnetism of the free layer is increased more easily. Therefore, the invention adds a thin magnetic buffer layer on the surface of the barrier layer, and provides a flatter substrate by utilizing the better ductility of the buffer layer, so that the uniformity of the subsequently deposited free layer film is better, and the TMR effect of the magnetic tunnel is not damaged.
In a second aspect, the present invention provides a method for reducing process fluctuation of a free layer of a magnetic tunnel junction, including:
providing a reference layer and a barrier layer which are sequentially stacked from bottom to top;
a magnetic buffer layer and a free layer are sequentially stacked on the barrier layer, and the magnetic buffer layer has a higher ductility than the free layer.
Optionally, the thickness of the buffer layer is controlled to be smaller than the thickness of the free layer.
Optionally, the ratio of the thickness of the magnetic buffer layer to the thickness of the free layer is controlled to be 0.5/9-1.5/8.5.
Optionally, a material having a magnetic property stronger than that of the material of the free layer is selected as the buffer layer material.
Optionally, one or a combination of more of Co, Fe, CoFe, FeB, CoFeB and Heusler alloy materials is selected as the material of the buffer layer.
Optionally, forming the free layer comprises:
and sequentially forming a first free layer, a coupling layer and a second free layer on the magnetic buffer layer.
Optionally, the method further comprises: sequentially laminating a pinning layer and an antiferromagnetic coupling layer;
the reference layer is formed on the antiferromagnetically-coupled layer.
The invention adds a thin magnetic buffer layer on the surface of the barrier layer, and provides a smoother substrate by utilizing the better ductility of the buffer layer, so that the uniformity of a subsequently deposited free layer film is better, and the TMR effect of a magnetic tunnel cannot be damaged.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
Example 1
An embodiment of the present invention provides a magnetic tunnel junction, as shown in fig. 1, including a reference layer 1, a barrier layer 2, a magnetic buffer layer 3, and a free layer 4, which are sequentially stacked; among them, the magnetic buffer layer 3 has higher ductility than the free layer 4.
The material of the reference layer 1 is a ferromagnetic material, and one or a combination of several of Co, Fe, CoFe, FeB, CoFeB or Heusler alloy materials can be selected, and the magnetization direction of the reference layer 1 is fixed.
The barrier layer 2 is made of a non-magnetic material, and may be one or a combination of several selected from magnesium oxide, aluminum oxide, magnesium aluminum oxide, hafnium oxide, tantalum oxide, bismuth telluride, and bismuth selenide.
The material of the magnetic buffer layer 3 is also a magnetic material, and one or a combination of several of Co, Fe, CoFe, FeB, CoFeB or Heusler alloy materials can be selected.
The material of the free layer 4 is ferromagnetic material, and can be selected from one or a combination of several of Co, Fe, CoFe, FeB, CoFeB or Heusler alloy material.
The magnetic buffer layer 3 needs to be more ductile than the free layer 4, and for this purpose, a material having better ductility than the material of the free layer 4 may be selected depending on the material of the free layer 4 that has been selected. The magnetic buffer layer 3 may be formed to have a crystal structure that is more ductile than the free layer 4.
As an alternative to this embodiment, the following table:
Co/CoFeB | standard deviation of damping coefficient | Damping coefficient test point discreteness | Discrete standard deviation |
0/10 | 0.00074 | 186.4 | 13.8 |
1.0/9.0 | 0.00046 | 155.9 | 10.3 |
1.5/8.5 | 0.00041 | 139.2 | 8 |
In the above embodiment, Co is selected as the material of the magnetic buffer layer 3, CoFeB is selected as the material of the free layer 4, and it can be seen in the graph that when the ratio of the thickness of the buffer layer to the thickness of the free layer 4 is 1/9 and 1.5/8.5, it can be seen that three performance parameters of damming error bar, dH0, dH0error bar are greatly reduced, and thus it can be seen that the uniformity of the free layer 4 is significantly improved with the addition of the buffer layer.
This embodiment provides a flatter substrate by adding a thin magnetic buffer layer 3 on the surface of the barrier layer 2, which utilizes its better ductility to make the subsequently deposited free layer 4 film more uniform without compromising the TMR effect of the magnetic tunnel.
Example 2
The present embodiment provides a magnetic tunnel junction, as shown in fig. 2, including a pinned layer 6, an antiferromagnetic coupling layer 5, a reference layer 1, a barrier layer 2, a magnetic buffer layer 3, and a free layer 4, which are sequentially stacked; among them, the magnetic buffer layer 3 has higher ductility than the free layer 4. The free layer 4 includes a first free layer 41, a coupling layer 42, and a second free layer 43, which are sequentially stacked. Wherein the first free layer 41 is in contact with the buffer layer. A capping layer 7 is further laminated on the second free layer 43 in order to protect the second free layer 43.
The material of the pinning layer 6 can be selected from one or more of Co, Fe, CoFe, NiFe, NiFeCo, CoFeB, CoMnB or CoNbZr.
The antiferromagnetic coupling layer 5 may be one or a combination of ruthenium, chromium, rhodium and iridium.
The material of the reference layer 1 is a ferromagnetic material, and one or a combination of several of Co, Fe, CoFe, FeB, CoFeB or Heusler alloy materials can be selected, and the magnetization direction of the reference layer 1 is fixed.
The barrier layer 2 is made of a non-magnetic material, and may be one or a combination of several selected from magnesium oxide, aluminum oxide, magnesium aluminum oxide, hafnium oxide, tantalum oxide, bismuth telluride, and bismuth selenide.
The material of the magnetic buffer layer 3 is also a magnetic material, and one or a combination of several of Co, Fe, CoFe, FeB, CoFeB or Heusler alloy materials can be selected.
The materials of the first free layer 41 and the second free layer 43 are all ferromagnetic materials, and one or a combination of several of Co, Fe, CoFe, FeB, CoFeB or Heusler alloy materials can be selected. The coupling layer 42 may be one or a combination of Ta, W, Nb, Ru, Ti, Cr, V, Mo, and Re.
The magnetic buffer layer 3 needs to be more ductile than the free layer 4, and for this purpose, a material having better ductility than the material of the free layer 4 may be selected depending on the material of the free layer 4 that has been selected. The magnetic buffer layer 3 may be formed to have a crystal structure that is more ductile than the free layer 4.
This embodiment provides a flatter substrate by adding a thin magnetic buffer layer 3 on the surface of the barrier layer 2, which utilizes its better ductility to make the subsequently deposited free layer 4 film more uniform without compromising the TMR effect of the magnetic tunnel.
As an alternative embodiment of this embodiment, the magnetic buffer layer 3 is made of a material having a magnetic property stronger than that of the material of the free layer 4.
As an alternative to this embodiment, the thickness of the magnetic buffer layer 3 is smaller than the thickness of the free layer 4.
As a further optional implementation manner of the embodiment, the ratio of the thickness of the buffer layer to the thickness of the free layer 4 is 0.5/9 to 1.5/8.5.
Example 3
The embodiment provides a method for reducing process fluctuation of a free layer of a magnetic tunnel junction, which comprises the following steps:
providing a reference layer and a barrier layer which are sequentially stacked from bottom to top;
a magnetic buffer layer and a free layer are sequentially stacked on the barrier layer, and the magnetic buffer layer has a higher ductility than the free layer.
The specific forming process is as follows: one or more of Co, Fe, CoFe, FeB, CoFeB or Heusler alloy materials are selected as raw materials, and the reference layer is formed on the substrate by the raw materials.
Selecting one or a composition of more of magnesium oxide, aluminum oxide, magnesium aluminum oxide, hafnium oxide, tantalum oxide, bismuth telluride or bismuth selenide as a raw material, and forming a barrier layer on the reference layer.
One or more of Co, Fe, CoFe, FeB, CoFeB or Heusler alloy materials are selected as raw materials, and a magnetic buffer layer is formed on the barrier layer.
One or more of Co, Fe, CoFe, FeB, CoFeB or Heusler alloy materials are selected as raw materials to form a free layer on the magnetic buffer layer.
The above layers may be formed by Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), radio frequency sputtering (RF), ion spraying (PSC), or the like.
As an alternative to this embodiment, in selecting the material of the magnetic buffer layer, a material is selected that is more ductile than the free layer material.
As another alternative to this embodiment, the same material as the free layer material may be selected when selecting the magnetic buffer layer material, and a crystal structure having better ductility than the free layer may be formed when forming the magnetic buffer layer.
As an alternative to this embodiment, a material with a magnetic property stronger than that of the material of the free layer is selected as the buffer layer material.
As an optional implementation manner of this embodiment, the thickness of the buffer layer is controlled to be smaller than the thickness of the free layer.
As a further optional implementation manner of the embodiment, the ratio of the thickness of the magnetic buffer layer to the thickness of the free layer is controlled to be 0.5/9-1.5/8.5.
For the MTJ structure with the free layer on the uppermost layer, due to the deposition of the multilayer film below the free layer, the surface flatness of the barrier layer is reduced after the barrier layer is deposited, and the magnetic process fluctuation is increased more easily. Therefore, the present embodiment adds a thin magnetic buffer layer on the surface of the barrier layer, utilizes its better ductility to provide a smoother substrate, and utilizes its stronger magnetism to homogenize the magnetic moment of the free layer, so that the uniformity of the subsequently deposited free layer film is better, and the TMR effect of the MTJ is not damaged.
Example 4
The embodiment provides a method for reducing process fluctuation of a free layer of a magnetic tunnel junction, which comprises the following steps:
providing a pinning layer, an antiferromagnetic coupling layer, a reference layer and a barrier layer which are sequentially laminated from bottom to top;
a magnetic buffer layer and a free layer are sequentially stacked on the barrier layer, and the magnetic buffer layer has a higher ductility than the free layer.
The specific forming process is as follows: one or a combination of more of Co, Fe, CoFe, NiFe, NiFeCo, CoFeB, CoMnB or CoNbZr is selected as a raw material to form a pinning layer on the substrate.
One or more of ruthenium, chromium, rhodium or iridium is selected as raw material to form an antiferromagnetic coupling layer on the pinning layer.
One or more of Co, Fe, CoFe, FeB, CoFeB and Heusler alloy materials are selected as raw materials, so that the reference layer is formed on the antiferromagnetic coupling layer.
Selecting one or a composition of more of magnesium oxide, aluminum oxide, magnesium aluminum oxide, hafnium oxide, tantalum oxide, bismuth telluride or bismuth selenide as a raw material, and forming a barrier layer on the reference layer.
One or more of Co, Fe, CoFe, FeB, CoFeB or Heusler alloy materials are selected as raw materials, and a magnetic buffer layer is formed on the barrier layer.
The specific step of forming the free layer includes forming a first free layer on the magnetic buffer layer by selecting one or a combination of several of Co, Fe, CoFe, FeB, CoFeB or Heusler alloy materials as a raw material. One or more of Ta, W, Nb, Ru, Ti, Cr, V, Mo and Re is selected as a raw material to form a coupling layer on the first free layer. And selecting one or a combination of more of Co, Fe, CoFe, FeB, CoFeB or Heusler alloy materials as a raw material to form a second free layer on the coupling layer.
The layers may be formed by Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), radio frequency sputtering (RF), ion spraying (PSC), or the like.
As an alternative to this embodiment, in selecting the material of the magnetic buffer layer, a material is selected that is more ductile than the free layer material.
As another alternative to this embodiment, the same material as the free layer material may be selected when selecting the magnetic buffer layer material, and a crystal structure having better ductility than the free layer may be formed when forming the magnetic buffer layer.
As an alternative to this embodiment, a material with a magnetic property stronger than that of the material of the free layer is selected as the buffer layer material.
As an optional implementation manner of this embodiment, the thickness of the buffer layer is controlled to be smaller than the thickness of the free layer.
As a further optional implementation manner of the embodiment, the ratio of the thickness of the magnetic buffer layer to the thickness of the free layer is controlled to be 0.5/9-1.5/8.5.
As an alternative to this embodiment, a capping layer may also be formed on the free layer.
For the MTJ structure with the free layer on the uppermost layer, due to the deposition of the multilayer film below the free layer, the surface flatness of the barrier layer is reduced after the barrier layer is deposited, and the magnetic process fluctuation is more easily increased. Therefore, the present embodiment adds a thin magnetic buffer layer on the surface of the barrier layer, utilizes its better ductility to provide a smoother substrate, and utilizes its stronger magnetism to homogenize the magnetic moment of the free layer, so that the uniformity of the subsequently deposited free layer film is better, and the TMR effect of the MTJ is not damaged.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (14)
1. A magnetic tunnel junction, characterized by: the device at least comprises a reference layer, a barrier layer, a magnetic buffer layer and a free layer which are sequentially stacked; wherein the magnetic buffer layer is more ductile than the free layer.
2. The magnetic tunnel junction of claim 1 wherein: the magnetic buffer layer is made of a material having a magnetic property stronger than that of the free layer.
3. The magnetic tunnel junction of claim 1 wherein: the thickness of the magnetic buffer layer is smaller than that of the free layer.
4. The magnetic tunnel junction of claim 3 wherein: the thickness ratio of the buffer layer to the free layer is 0.5/9-1.5/8.5.
5. The magnetic tunnel junction of claim 1 wherein: the magnetic buffer layer comprises one or a combination of more of Co, Fe, CoFe, FeB, CoFeB or Heusler alloy materials.
6. The magnetic tunnel junction of claim 1 wherein: the anti-ferromagnetic coupling layer and the pinning layer are arranged in a laminated mode; the side surface of the antiferromagnetic coupling layer facing away from the pinned layer is in contact with the reference layer.
7. The magnetic tunnel junction of claim 1 wherein: the free layer comprises a first free layer, a coupling layer and a second free layer which are sequentially stacked, wherein one side of the first free layer, which is far away from the coupling layer, is in contact with the barrier layer; the materials of the first free layer and the second free layer are both magnetic materials.
8. A method for reducing the process fluctuation of a free layer of a magnetic tunnel junction is characterized in that: the method comprises the following steps:
providing a reference layer and a barrier layer which are sequentially stacked from bottom to top;
a magnetic buffer layer and a free layer are sequentially stacked on the barrier layer, and the magnetic buffer layer has a ductility higher than that of the free layer.
9. The method of reducing process variation of a free layer of a magnetic tunnel junction according to claim 8, wherein: and controlling the thickness of the buffer layer to be smaller than that of the free layer.
10. The method of reducing process variation of a free layer of a magnetic tunnel junction according to claim 9, wherein: controlling the thickness ratio of the magnetic buffer layer to the free layer to be 0.5/9-1.5/8.5.
11. The method of reducing process variation of a free layer of a magnetic tunnel junction according to claim 8, wherein: and selecting a material with magnetism stronger than that of the material of the free layer as a buffer layer material.
12. The method of reducing process variation of a free layer of a magnetic tunnel junction according to claim 8, wherein: selecting one or a combination of more of Co, Fe, CoFe, FeB, CoFeB or Heusler alloy materials as the material of the buffer layer.
13. The method of reducing process variation of a free layer of a magnetic tunnel junction according to claim 8, wherein: forming the free layer includes:
and sequentially forming a first free layer, a coupling layer and a second free layer on the magnetic buffer layer.
14. The method of reducing process variation of a free layer of a magnetic tunnel junction according to claim 8, wherein: further comprising: sequentially laminating to form a pinning layer and an antiferromagnetic coupling layer;
the reference layer is formed on the antiferromagnetically-coupled layer.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910741890.4A CN112397636B (en) | 2019-08-12 | 2019-08-12 | Magnetic tunnel junction and method for reducing process fluctuation of free layer of magnetic tunnel junction |
PCT/CN2020/098497 WO2021027404A1 (en) | 2019-08-12 | 2020-06-28 | Magnetic tunnel junction and method for reducing magnetic tunnel junction free layer process fluctuations |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910741890.4A CN112397636B (en) | 2019-08-12 | 2019-08-12 | Magnetic tunnel junction and method for reducing process fluctuation of free layer of magnetic tunnel junction |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112397636A CN112397636A (en) | 2021-02-23 |
CN112397636B true CN112397636B (en) | 2022-08-26 |
Family
ID=74569508
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910741890.4A Active CN112397636B (en) | 2019-08-12 | 2019-08-12 | Magnetic tunnel junction and method for reducing process fluctuation of free layer of magnetic tunnel junction |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN112397636B (en) |
WO (1) | WO2021027404A1 (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003298145A (en) * | 2002-03-29 | 2003-10-17 | Toshiba Corp | Magnetoresistive effect element and magnetic memory device |
CN105633276A (en) * | 2014-10-29 | 2016-06-01 | 华为技术有限公司 | Memory cell based on magnetic alloy composite film, preparation method thereof and magnetic storage device comprising memory cell |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4024499B2 (en) * | 2001-08-15 | 2007-12-19 | 株式会社東芝 | Magnetoresistive element, magnetic head, and magnetic reproducing apparatus |
CN100552810C (en) * | 2006-02-16 | 2009-10-21 | 财团法人工业技术研究院 | Magnetic cell and its manufacture method |
US8283741B2 (en) * | 2010-01-08 | 2012-10-09 | International Business Machines Corporation | Optimized free layer for spin torque magnetic random access memory |
US10050192B2 (en) * | 2015-12-11 | 2018-08-14 | Imec Vzw | Magnetic memory device having buffer layer |
CN105702853B (en) * | 2016-03-04 | 2019-05-21 | 北京航空航天大学 | A kind of spin-transfer torque magnetic cell |
-
2019
- 2019-08-12 CN CN201910741890.4A patent/CN112397636B/en active Active
-
2020
- 2020-06-28 WO PCT/CN2020/098497 patent/WO2021027404A1/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003298145A (en) * | 2002-03-29 | 2003-10-17 | Toshiba Corp | Magnetoresistive effect element and magnetic memory device |
CN105633276A (en) * | 2014-10-29 | 2016-06-01 | 华为技术有限公司 | Memory cell based on magnetic alloy composite film, preparation method thereof and magnetic storage device comprising memory cell |
Also Published As
Publication number | Publication date |
---|---|
WO2021027404A1 (en) | 2021-02-18 |
CN112397636A (en) | 2021-02-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8758909B2 (en) | Scalable magnetoresistive element | |
US9182460B2 (en) | Method of fabricating a magnetoresistive element | |
EP2943957B1 (en) | Mg discontinuous insertion layer for improving mt j shunt | |
US7973349B2 (en) | Magnetic device having multilayered free ferromagnetic layer | |
KR102198034B1 (en) | Method and system for providing magnetic junctions including heusler multilayers | |
EP2502232B1 (en) | Mtj incorporating cofe/ni multilayer film with perpendicular magnetic anisotropy for mram application | |
EP2673807B1 (en) | Magnetic element with improved out-of-plane anisotropy for spintronic applications | |
US7777261B2 (en) | Magnetic device having stabilized free ferromagnetic layer | |
US8039913B2 (en) | Magnetic stack with laminated layer | |
US8604569B2 (en) | Magnetoresistive element | |
EP2718928B1 (en) | Spin-torque magnetoresistive memory element and method of fabricating same | |
JP5623507B2 (en) | Magnetic layered body having spin torque switching and having a layer for assisting switching of spin torque | |
US9368176B2 (en) | Scalable magnetoresistive element | |
JP4551484B2 (en) | Tunnel magnetoresistive thin film and magnetic multilayer film manufacturing apparatus | |
US7583529B2 (en) | Magnetic tunnel junction devices and magnetic random access memory | |
US20100316890A1 (en) | Magnetic tunnel junction device with magnetic free layer having sandwich structure | |
US20130032910A1 (en) | Magnetic memory device and method of manufacturing the same | |
US10431275B2 (en) | Method and system for providing magnetic junctions having hybrid oxide and noble metal capping layers | |
WO2012128891A1 (en) | Magnetic tunnel junction with iron dusting layer between free layer and tunnel barrier | |
US7173300B2 (en) | Magnetoresistive element, method for making the same, and magnetic memory device incorporating the same | |
US11316102B2 (en) | Composite multi-stack seed layer to improve PMA for perpendicular magnetic pinning | |
US11081154B1 (en) | Synthetic magnetic pinning element having strong antiferromagnetic coupling | |
CN112397636B (en) | Magnetic tunnel junction and method for reducing process fluctuation of free layer of magnetic tunnel junction | |
US11450466B2 (en) | Composite seed structure to improve PMA for perpendicular magnetic pinning | |
KR100586265B1 (en) | Magnetic tunnel junctions employing amorphous cofesib free layer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |