CN105633213A - Surface passivating treatment technology for double-sided glass crystalline silicon solar cell - Google Patents
Surface passivating treatment technology for double-sided glass crystalline silicon solar cell Download PDFInfo
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- CN105633213A CN105633213A CN201610090854.2A CN201610090854A CN105633213A CN 105633213 A CN105633213 A CN 105633213A CN 201610090854 A CN201610090854 A CN 201610090854A CN 105633213 A CN105633213 A CN 105633213A
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- solar cell
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- crystal silicon
- crystalline silicon
- silicon chip
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 16
- 239000011521 glass Substances 0.000 title claims abstract description 13
- 238000005516 engineering process Methods 0.000 title claims abstract description 9
- 238000002161 passivation Methods 0.000 claims abstract description 30
- 238000009792 diffusion process Methods 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 9
- 230000003647 oxidation Effects 0.000 claims abstract description 6
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 16
- 210000004027 cell Anatomy 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 8
- 235000008216 herbs Nutrition 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 210000002268 wool Anatomy 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000002708 enhancing effect Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 229910052756 noble gas Inorganic materials 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 239000000376 reactant Substances 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 230000009466 transformation Effects 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a surface passivating treatment technology for a double-sided glass crystalline silicon solar cell. The passivating treatment technology comprises a texturing step, a diffusion step, an edge etching step, a primary passivating step, a secondary passivating step and a thermal treatment step. By a structure of a silicon dioxide oxidation layer and an aluminum nitride passivation layer, the conversion rate of a solar panel is improved; the utilization rate is improved; the defect of oneness is avoided by the structure of combining the oxidation layer and the passivation layer; and the service lifetime of the solar panel is prolonged.
Description
Technical field
The present invention relates to technical field of solar batteries, be specially a kind of double-side silicon-glass solar cell surface passivation process.
Background technology
In recent years; due to energy crisis and severe environmental pollution; find new clean alternative energy source and become the developing direction of countries in the world; and field of solar energy is through development in a few years; become Application comparison clear energy sources widely in new energy field; wherein, especially being most widely used and maturation with solaode. In the preparation process of high efficiency crystalline silicon solar cell, rational crystalline silicon passivating process is favorably improved the transformation efficiency of cell panel, and service efficiency is better, and traditional passivation technology has the shortcomings such as transformation efficiency is low.
Summary of the invention
It is an object of the invention to provide a kind of double-side silicon-glass solar cell surface passivation process.
For achieving the above object, the present invention provides following technical scheme: a kind of double-side silicon-glass solar cell surface passivation process, and described passivation process step is as follows:
The first step: making herbs into wool, adopts chemical solution to corrode crystalline silicon, removes the impurity damage layer of surface of crystalline silicon, and forms sunken light suede structure;
Second step: diffusion, carries out high temperature P DIFFUSION TREATMENT to the crystalline silicon processed through making herbs into wool, and after diffusion, square resistance is 70��90 ��;
3rd: carve limit, the limit knot of etching crystal silicon chip;
4th step: be passivated for the first time, is built in the crystal silicon chip after etching under 80-120 �� of C hot environment of sealing, passes into oxygen and carry out oxidation processes, makes crystal silicon chip surface form oxide layer;
5th step: secondary passivity, adopts magnetic control to spatter technology, and using Al as target, NH4 is as reactant gas source, and noble gas is as plasma enhancing gas, in the first crystal silicon chip surface depositing Al N thin film being passivated as passivation layer;
6th step: heat treatment, is built in the crystal silicon chip after secondary passivity under 120-150 �� of C elevated-temperature seal environment and heats 3-5 minute.
Preferably, described chemical solution is sodium hydroxide solution.
Preferably, the concentration of described sodium hydroxide solution is 35-45g/L.
Preferably, the thickness of described oxide layer is 1-2nm.
Preferably, the thickness of described passivation layer is 2-3nm.
Compared with prior art, the invention has the beneficial effects as follows: the present invention adopts silicon dioxide oxide layer and the structure of aluminium nitride passivation layer, improve the conversion ratio of solar panel, improve utilization rate, and the structure that combines of oxide layer and passivation layer avoids and unicity shortcoming occurs, improve the service life of solar panel.
Detailed description of the invention
It is clearly and completely described below in conjunction with the technical scheme in the embodiment of the present invention, it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments. Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of protection of the invention.
Embodiment one
A kind of double-side silicon-glass solar cell surface passivation process, described passivation process step is as follows:
The first step: making herbs into wool, adopts chemical solution to corrode crystalline silicon, and described chemical solution is sodium hydroxide solution, and the concentration of described sodium hydroxide solution is 35-45g/L, removes the impurity damage layer of surface of crystalline silicon, and forms sunken light suede structure;
Second step: diffusion, carries out high temperature P DIFFUSION TREATMENT to the crystalline silicon processed through making herbs into wool, and after diffusion, square resistance is 80 ��;
3rd: carve limit, the limit knot of etching crystal silicon chip;
4th step: be passivated for the first time, the preferred ambient temperature of first passivation is 100 �� of C, is built under 90 �� of C hot environments of sealing by the crystal silicon chip after etching, passes into oxygen and carry out oxidation processes, making crystal silicon chip surface form oxide layer, the thickness of described oxide layer is 1.6nm;
5th step: secondary passivity, adopts magnetic control to spatter technology, and using Al as target, NH4 is as reactant gas source, and noble gas is as plasma enhancing gas, and in the first crystal silicon chip surface depositing Al N thin film being passivated as passivation layer, the thickness of described passivation layer is 2.2nm;
6th step: heat treatment, is built in the crystal silicon chip after secondary passivity under 130 �� of C elevated-temperature seal environment and heats 4 minutes.
Embodiment two
A kind of double-side silicon-glass solar cell surface passivation process, described passivation process step is as follows:
The first step: making herbs into wool, adopts chemical solution to corrode crystalline silicon, and described chemical solution is sodium hydroxide solution, and the concentration of described sodium hydroxide solution is 40g/L, removes the impurity damage layer of surface of crystalline silicon, and forms sunken light suede structure;
Second step: diffusion, carries out high temperature P DIFFUSION TREATMENT to the crystalline silicon processed through making herbs into wool, and after diffusion, square resistance is 85 ��;
3rd: carve limit, the limit knot of etching crystal silicon chip;
4th step: be passivated for the first time, the preferred ambient temperature of first passivation is 100 �� of C, is built under 100 �� of C hot environments of sealing by the crystal silicon chip after etching, passes into oxygen and carry out oxidation processes, making crystal silicon chip surface form oxide layer, the thickness of described oxide layer is 1.5nm;
5th step: secondary passivity, adopts magnetic control to spatter technology, and using Al as target, NH4 is as reactant gas source, and noble gas is as plasma enhancing gas, and in the first crystal silicon chip surface depositing Al N thin film being passivated as passivation layer, the thickness of described passivation layer is 2.5nm;
6th step: heat treatment, is built in the crystal silicon chip after secondary passivity under 135 �� of C elevated-temperature seal environment and heats 4.5 minutes.
Although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, being appreciated that and these embodiments can be carried out multiple change, amendment, replacement and modification without departing from the principles and spirit of the present invention, the scope of the present invention be defined by the appended.
Claims (5)
1. a double-side silicon-glass solar cell surface passivation process, it is characterised in that: described passivation process step is as follows:
The first step: making herbs into wool, adopts chemical solution to corrode crystalline silicon, removes the impurity damage layer of surface of crystalline silicon, and forms sunken light suede structure;
Second step: diffusion, carries out high temperature P DIFFUSION TREATMENT to the crystalline silicon processed through making herbs into wool, and after diffusion, square resistance is 70��90 ��;
3rd: carve limit, the limit knot of etching crystal silicon chip;
4th step: be passivated for the first time, is built in the crystal silicon chip after etching under 80-120 �� of C hot environment of sealing, passes into oxygen and carry out oxidation processes, makes crystal silicon chip surface form oxide layer;
5th step: secondary passivity, adopts magnetic control to spatter technology, and using Al as target, NH4 is as reactant gas source, and noble gas is as plasma enhancing gas, in the first crystal silicon chip surface depositing Al N thin film being passivated as passivation layer;
6th step: heat treatment, is built in the crystal silicon chip after secondary passivity under 120-150 �� of C elevated-temperature seal environment and heats 3-5 minute.
2. a kind of double-side silicon-glass solar cell surface passivation process according to claim 1, it is characterised in that: described chemical solution is sodium hydroxide solution.
3. a kind of double-side silicon-glass solar cell surface passivation process according to claim 1, it is characterised in that: the concentration of described sodium hydroxide solution is 35-45g/L.
4. a kind of double-side silicon-glass solar cell surface passivation process according to claim 1, it is characterised in that: the thickness of described oxide layer is 1-2nm.
5. a kind of double-side silicon-glass solar cell surface passivation process according to claim 1, it is characterised in that: the thickness of described passivation layer is 2-3nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610090854.2A CN105633213A (en) | 2016-02-19 | 2016-02-19 | Surface passivating treatment technology for double-sided glass crystalline silicon solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610090854.2A CN105633213A (en) | 2016-02-19 | 2016-02-19 | Surface passivating treatment technology for double-sided glass crystalline silicon solar cell |
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| CN105633213A true CN105633213A (en) | 2016-06-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610090854.2A Pending CN105633213A (en) | 2016-02-19 | 2016-02-19 | Surface passivating treatment technology for double-sided glass crystalline silicon solar cell |
Country Status (1)
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101241952A (en) * | 2007-02-07 | 2008-08-13 | 北京中科信电子装备有限公司 | Solar battery slice technology for efficient and low-cost film crystal silicon |
| CN102738248A (en) * | 2011-04-11 | 2012-10-17 | 昆山中辰矽晶有限公司 | Optoelectronic device and method for manufacturing thereof |
| US20120312353A1 (en) * | 2009-07-17 | 2012-12-13 | Universitaet Ulm | Semiconductor component having diamond-containing electrodes and use thereof |
-
2016
- 2016-02-19 CN CN201610090854.2A patent/CN105633213A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101241952A (en) * | 2007-02-07 | 2008-08-13 | 北京中科信电子装备有限公司 | Solar battery slice technology for efficient and low-cost film crystal silicon |
| US20120312353A1 (en) * | 2009-07-17 | 2012-12-13 | Universitaet Ulm | Semiconductor component having diamond-containing electrodes and use thereof |
| CN102738248A (en) * | 2011-04-11 | 2012-10-17 | 昆山中辰矽晶有限公司 | Optoelectronic device and method for manufacturing thereof |
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Application publication date: 20160601 |