CN105609919A - Manufacturing method for attenuation sheet - Google Patents
Manufacturing method for attenuation sheet Download PDFInfo
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- CN105609919A CN105609919A CN201510987494.1A CN201510987494A CN105609919A CN 105609919 A CN105609919 A CN 105609919A CN 201510987494 A CN201510987494 A CN 201510987494A CN 105609919 A CN105609919 A CN 105609919A
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- attenuator
- preparation
- electrode
- input
- attenuation sheet
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
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- Manufacturing & Machinery (AREA)
- Thermistors And Varistors (AREA)
Abstract
The invention belongs to the field of production and processing of an attenuation sheet, and specifically relates to a manufacturing method for a 1dB attenuation sheet with power of 2W; the manufacturing method comprises the following steps of designing an attenuation sheet pattern through HFSS software in a simulation manner; sputtering a resistor and an electrode layer on an aluminum oxide ceramic substrate; electroplating a thickened gold electrode; obtaining electrode and resistor patterns through photoetching; dividing the attenuation sheet by a grinding wheel into independent attenuation sheet units; adjusting input and output impedances by a thermal oxidation impedance adjusting method; and coating the input end and the output end of the attenuation sheet with conductive silver paste. By adoption of the attenuation sheet manufactured by the invention, the operating frequency can achieve 18GHz; the attenuation precision within the operating efficiency is 1dB plus or minus 0.4dB; the standing-wave ratio is less than or equal to 1.3; and the input and output impedances are 50 plus or minus 1 omega.
Description
Technical field
The invention belongs to attenuator production and processing field, being specifically related to a kind of power is the preparation method of the 1dB attenuator of 2 watts.
Background technology
In electronic communication and microwave system, signal level is had to a safety or normal requirement, too high level will cause overload, make amplifier unit occur that flagrant non-linear distortion even burns, thereby whole system can not be worked. And attenuator can be adjusted to signal level the level needing, attenuator is having irreplaceable effect aspect emission system and the receiving system gain of adjusting electronic equipment, is widely used in microwave transmitting and receiving system. The domestic research for attenuator, starts to walk more late, and Research foundation is also poor. Due to the reason such as technique and design, how attenuator common on domestic market is manufactured by thick-film technique, and its attenuation accuracy and high frequency performance are poor, and frequency of utilization is generally no more than 6GHz.
Summary of the invention
The object of this invention is to provide a kind of power is the preparation method of the 1dB attenuator of 2 watts, requires its frequency of utilization can reach 18GHz, the attenuation accuracy 1dB ± 0.4dB in frequency of utilization, standing-wave ratio≤1.3, input, output-resistor 50 ± 1 Ω.
For achieving the above object, the invention provides following technical scheme: a kind of power is the preparation method of the 1dB attenuator of 2 watts, comprises the following steps:
Step (101), adopt HFSS software emulation, design attenuator figure;
Step (102), on alumina ceramic substrate sputter resistance and electrode layer;
Step (103), plating thickening gold electrode;
Step (104), make electrode and resistance pattern by lithography;
Step (105), emery wheel scribing, be partitioned into independent attenuator unit;
The method of step (106), use thermal oxide resistance trimming is adjusted input, output-resistor;
Step (107), the input at attenuator, output coated with conductive silver paste;
Preferably, the substrate that making attenuator is selected is that purity is 99.6% aluminium oxide ceramics, and its thickness requirement is 0.38 ± 0.03mm;
Preferably, in step (102), on aluminium oxide ceramics, the film of sputter system is TaN/WTi/Au, and wherein TaN is resistive layer, and WTi is as transition zone, and Au is as electrode layer;
Further, the sheet resistance of described TaN is for being 70 ± 10 Ω/;
Further, the thickness of described Au electrode layer is 0.1um;
Preferably, in step (103), electroplate the thickness >=3um of thickening gold electrode;
Preferably, in step (104), the step of photoetching process is: gluing, and---------developing,---post bake---corrosion---removes photoresist front baking, in the be controlled at ± 10um of trueness error of the electrode of producing and resistance pattern lines in exposure;
Preferably, the electrode making by lithography and resistance pattern are about the center line symmetry of attenuator unit;
Preferably, in step (106), thermal oxide resistance trimming carries out in baking oven, and the temperature range of baking oven is 300 ~ 400 DEG C, adopts the method for successive approximation to carry out thermal oxide resistance trimming, makes input, output-resistor reach 50 ± 1 Ω;
Further, in step (107), after the input of attenuator, output coated with conductive silver paste, the baking oven of putting into 150 DEG C solidifies 30min.
Technique effect of the present invention is: the attenuator that adopts method of the present invention to make, frequency of utilization can reach 18GHz, the attenuation accuracy 1dB ± 0.4dB in frequency of utilization, standing-wave ratio≤1.3, input, output-resistor 50 ± 1 Ω.
Detailed description of the invention
Following embodiment is further illustrating using the explaination as to the technology of the present invention content for content of the present invention; but flesh and blood of the present invention is not limited in described in following embodiment, those of ordinary skill in the art can and should know any simple change or replacement based on connotation of the present invention all should belong to protection domain of the presently claimed invention.
Power is a preparation method for the 1dB attenuator of 2 watts, comprises the following steps:
Step (101), adopt HFSS software emulation, design attenuator figure, adopt the HFSS of high frequency simulation software, according to parameters such as the material of attenuator, appearance and size, environments for use, simulate the size of electrode and resistance pattern. By regulating sheet resistance value and the shape of film resistor, make the standing-wave ratio of attenuator in the time of 45MHz be less than 1.01, be less than 1.3 at the simulation result of DC～18GHz standing-wave ratio simultaneously, attenuation is controlled at 0.8～1.0dB;
Step (102), on alumina ceramic substrate sputter resistance and electrode layer;
Step (103), plating thickening gold electrode;
Step (104), make electrode and resistance pattern by lithography;
Step (105), emery wheel scribing, be partitioned into independent attenuator unit;
The method of step (106), use thermal oxide resistance trimming is adjusted input, output-resistor;
Step (107), the input at attenuator, output coated with conductive silver paste.
Preferably, the substrate that making attenuator is selected is that purity is 99.6% aluminium oxide ceramics, and its thickness requirement is 0.38 ± 0.03mm.
Preferably, in step (102), on aluminium oxide ceramics, the film of sputter system is TaN/WTi/Au, and wherein TaN is resistive layer, and WTi is as transition zone, and Au is as electrode layer.
Further, the sheet resistance of described TaN is for being 70 ± 10 Ω/, and the sheet resistance of TaN is too high or too low, all, by affecting the high frequency performance of attenuator, must be strict controlled in 70 ± 10 Ω/.
Preferably, the thickness of described Au electrode layer is 0.1um.
Preferably, in step (103), electroplate the thickness >=3um of thickening gold electrode, because the frequency of utilization of attenuator reaches 18GHz, Kelvin effect now can be clearly, the thickness >=3um of necessary guarantee fund's electrode.
Preferably, in step (104), the step of photoetching process is: gluing, and---------developing,---post bake---corrosion---removes photoresist front baking, in the be controlled at ± 10um of trueness error of the electrode of producing and resistance pattern lines in exposure.
Preferably, the electrode making by lithography and resistance pattern are about the center line symmetry of attenuator unit, realize the indifference design of input, output, avoided from source in use, because input, output are done the product failure causing on the contrary, having realized the fool-proof design of hommization.
Preferably, in step (106), thermal oxide resistance trimming carries out in baking oven, and the temperature range of baking oven is 300 ~ 400 DEG C, adopts the method for successive approximation to carry out thermal oxide resistance trimming, makes input, output-resistor reach 50 ± 1 Ω.
Further, in step (107), after the input of attenuator, output coated with conductive silver paste, the baking oven of putting into 150 DEG C solidifies 30min.
The attenuator that adopts method of the present invention to make, frequency of utilization can reach 18GHz, the attenuation accuracy 1dB ± 0.4dB in frequency of utilization, standing-wave ratio≤1.3, input, output-resistor 50 ± 1 Ω.
Claims (10)
1. a preparation method for attenuator, is characterized in that comprising the following steps:
Step (101), adopt HFSS software emulation, design attenuator figure;
Step (102), on alumina ceramic substrate sputter resistance and electrode layer;
Step (103), plating thickening gold electrode;
Step (104), make electrode and resistance pattern by lithography;
Step (105), emery wheel scribing, be partitioned into independent attenuator unit;
The method of step (106), use thermal oxide resistance trimming is adjusted input, output-resistor;
Step (107), the input at attenuator, output coated with conductive silver paste.
2. the preparation method of a kind of attenuator according to claim 1, is characterized in that: the substrate that making attenuator is selected is that purity is 99.6% aluminium oxide ceramics, and its thickness requirement is 0.38 ± 0.03mm.
3. the preparation method of a kind of attenuator according to claim 1, is characterized in that: in step (102), on aluminium oxide ceramics, the film of sputter system is TaN/WTi/Au, and wherein TaN is resistive layer, and WTi is as transition zone, and Au is as electrode layer.
4. the preparation method of a kind of attenuator according to claim 3, is characterized in that: the sheet resistance of described TaN is for being 70 ± 10 Ω/.
5. the preparation method of a kind of attenuator according to claim 3, is characterized in that: the thickness of described Au electrode layer is 0.1um.
6. the preparation method of a kind of attenuator according to claim 1, is characterized in that: in step (103), electroplate the thickness >=3um of thickening gold electrode.
7. the preparation method of a kind of attenuator according to claim 1, it is characterized in that: in step (104), the step of photoetching process is: gluing, and---------developing,---post bake---corrosion---removes photoresist front baking, in the be controlled at ± 10um of trueness error of the electrode of producing and resistance pattern lines in exposure.
8. the preparation method of a kind of attenuator according to claim 7, is characterized in that: the electrode making by lithography and resistance pattern are about the center line symmetry of attenuator unit.
9. the preparation method of a kind of attenuator according to claim 1, it is characterized in that: in step (106), thermal oxide resistance trimming carries out in baking oven, the temperature range of baking oven is 300 ~ 400 DEG C, adopt the method for successive approximation to carry out thermal oxide resistance trimming, make input, output-resistor reach 50 ± 1 Ω.
10. the preparation method of a kind of attenuator according to claim 1, is characterized in that: in step (107), after the input of attenuator, output coated with conductive silver paste, the baking oven of putting into 150 DEG C solidifies 30min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510987494.1A CN105609919A (en) | 2015-12-27 | 2015-12-27 | Manufacturing method for attenuation sheet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510987494.1A CN105609919A (en) | 2015-12-27 | 2015-12-27 | Manufacturing method for attenuation sheet |
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| Publication Number | Publication Date |
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| CN105609919A true CN105609919A (en) | 2016-05-25 |
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| CN201510987494.1A Pending CN105609919A (en) | 2015-12-27 | 2015-12-27 | Manufacturing method for attenuation sheet |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107947754A (en) * | 2017-11-23 | 2018-04-20 | 中国电子科技集团公司第四十研究所 | A kind of Wide band high performance attenuator circuit |
| CN110661068A (en) * | 2019-09-30 | 2020-01-07 | 深圳市禹龙通电子有限公司 | Load sheet and manufacturing process thereof |
| CN114142196A (en) * | 2021-11-29 | 2022-03-04 | 中国电子科技集团公司第四十三研究所 | Resistance type attenuator |
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| US20050196966A1 (en) * | 2004-03-08 | 2005-09-08 | Sung-Ling Su | Method for fabricating embedded thin film resistors of printed circuit board |
| CN103022628A (en) * | 2012-12-19 | 2013-04-03 | 中国振华集团云科电子有限公司 | Method for manufacturing thin film for sheet-type film attenuator |
| CN103545590A (en) * | 2013-10-24 | 2014-01-29 | 中国电子科技集团公司第四十一研究所 | Method for manufacturing microwave thin film attenuator |
| CN103746181A (en) * | 2013-12-31 | 2014-04-23 | 瑞声科技(沭阳)有限公司 | NFC (Near Field Communication) antenna and manufacturing method thereof |
| CN104269597A (en) * | 2014-09-25 | 2015-01-07 | 中国电子科技集团公司第四十一研究所 | Method for manufacturing film attenuation piece |
-
2015
- 2015-12-27 CN CN201510987494.1A patent/CN105609919A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050196966A1 (en) * | 2004-03-08 | 2005-09-08 | Sung-Ling Su | Method for fabricating embedded thin film resistors of printed circuit board |
| CN103022628A (en) * | 2012-12-19 | 2013-04-03 | 中国振华集团云科电子有限公司 | Method for manufacturing thin film for sheet-type film attenuator |
| CN103545590A (en) * | 2013-10-24 | 2014-01-29 | 中国电子科技集团公司第四十一研究所 | Method for manufacturing microwave thin film attenuator |
| CN103746181A (en) * | 2013-12-31 | 2014-04-23 | 瑞声科技(沭阳)有限公司 | NFC (Near Field Communication) antenna and manufacturing method thereof |
| CN104269597A (en) * | 2014-09-25 | 2015-01-07 | 中国电子科技集团公司第四十一研究所 | Method for manufacturing film attenuation piece |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107947754A (en) * | 2017-11-23 | 2018-04-20 | 中国电子科技集团公司第四十研究所 | A kind of Wide band high performance attenuator circuit |
| CN107947754B (en) * | 2017-11-23 | 2021-04-13 | 中国电子科技集团公司第四十一研究所 | Broadband high-performance attenuation circuit |
| CN110661068A (en) * | 2019-09-30 | 2020-01-07 | 深圳市禹龙通电子有限公司 | Load sheet and manufacturing process thereof |
| CN114142196A (en) * | 2021-11-29 | 2022-03-04 | 中国电子科技集团公司第四十三研究所 | Resistance type attenuator |
| CN114142196B (en) * | 2021-11-29 | 2023-06-16 | 中国电子科技集团公司第四十三研究所 | Resistance type attenuator |
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Application publication date: 20160525 |