CN105609570A - Schottky diode - Google Patents
Schottky diode Download PDFInfo
- Publication number
- CN105609570A CN105609570A CN201610075438.5A CN201610075438A CN105609570A CN 105609570 A CN105609570 A CN 105609570A CN 201610075438 A CN201610075438 A CN 201610075438A CN 105609570 A CN105609570 A CN 105609570A
- Authority
- CN
- China
- Prior art keywords
- layer
- contact layer
- metal level
- schottky diode
- schottky
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 54
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 238000002161 passivation Methods 0.000 claims abstract description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 4
- 230000005012 migration Effects 0.000 claims description 4
- 238000013508 migration Methods 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000005728 strengthening Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
Abstract
The invention discloses a schottky diode, and relates to the field of diodes. The schottky diode comprises an upper contact layer, a lower contact layer and a passivation layer, wherein the upper contact layer comprises a semiconductor base layer and a schottky contact layer; the schottky contact layer comprises a semiconductor layer and a metal layer; the semiconductor base layer, the semiconductor layer and the metal layer are stacked from top to bottom; the lower contact layer comprises a connecting medium layer and a plane contact body; a connecting medium is adhered to the metal layer; and the passivation layer coats two sides of the upper contact layer and the lower contact layer. The schottky diode can be widely suitable for usage occasions of various protecting diodes, can be quickly switched and is worthy of promotion.
Description
Technical field
The present invention relates to diode field, be specifically related to a kind of Schottky diode.
Background technology
Schottky diode is with respect to conventional P N junction diode; there is switching characteristic faster; namely can move to reverse cut-off from forward conduction run transition with high frequency; therefore Schottky diode; be particularly suitable for being used as protection diode in a large amount of different application, but existing Schottky diode is worked not satisfactory in high voltage and high current situation.
Summary of the invention
The object of the present invention is to provide a kind of Schottky diode, to solve the above-mentioned multinomial defect causing in prior art.
A kind of Schottky diode, comprise contact layer, lower contact layer and passivation layer, described upper contact layer comprises base semiconductor and schottky contact layer, described schottky contact layer comprises semiconductor layer and metal level, described base semiconductor, semiconductor layer and metal level be stacked setting from top to bottom, described lower contact layer comprises connecting media layer and plane contact, described connecting media and metal bonding layer, and described passivation layer is wrapped in the both sides of contact layer and lower contact layer.
Preferably, described metal level comprises the metal level two of metal level one and formation migration barrier, and described metal level two is bonding with connecting media.
Preferably, described base semiconductor has N-shaped doping, and described metal level two is made of titanium, and described connecting media layer and metal level are each made of aluminum.
Preferably, described plane contact body lower end is provided with metal contact layer.
Preferably, described upper contact layer and lower contact layer all be arranged in parallel, and the joint face of described passivation layer and upper contact layer and lower contact layer is obliquely installed.
Beneficial effect of the present invention: this kind of Schottky diode, by this kind of structural design, can carry high current and voltage, can higher electric current and voltage by time switch fast, reach the effect as protection diode, described base semiconductor and semiconductor layer adopt same material to make, but the doping content of semiconductor layer is lower than base semiconductor, in this diode, semiconductor layer and metal level form the necessary Schottky contacts of Schottky diode work, again by bonding another contact layer of connecting media, form the general frame of this diode, this structural strengthening electric current and the voltage bearing capacity of diode, described metal level comprises metal level one and forms the metal level two of migration barrier, described metal level two is bonding with connecting media, metal level two can avoid other metallic atoms to arrive metal level one and then hinder Schottky contacts through connecting media, described base semiconductor has N-shaped doping, described metal level two is made of titanium, described connecting media layer and metal level are each made of aluminum, these materials have ensured that each level all can bring into play useful effect in this diode, described plane contact body lower end is provided with metal contact layer, in the nonmetallic situation of plane contact body, metal contact layer can make outside form and be connected with diode, described upper contact layer and lower contact layer all be arranged in parallel, the joint face of described passivation layer and upper contact layer and lower contact layer is obliquely installed, be obliquely installed the normal work that can ensure diode under condition of high voltage.
Brief description of the drawings
Fig. 1 is the structural representation of a kind of Schottky diode of the present invention.
Fig. 2 is the structural representation of the metal level part of a kind of Schottky diode of the present invention.
Wherein: 1-base semiconductor, 2-semiconductor layer, 3-metal level, 4-connecting media, 5-plane contact body, 6-passivation layer, 7-metal contact layer, 30-metal level, one, 31-metal level two.
Detailed description of the invention
For technological means, creation characteristic that the present invention is realized, reach object and effect is easy to understand, below in conjunction with detailed description of the invention, further set forth the present invention.
As depicted in figs. 1 and 2, a kind of Schottky diode, comprise contact layer, lower contact layer and passivation layer 6, described upper contact layer comprises base semiconductor 1 and schottky contact layer, described schottky contact layer comprises semiconductor layer 2 and metal level 3, the stacked setting from top to bottom of described base semiconductor 1, semiconductor layer 2 and metal level 3, described lower contact layer comprises 4 layers of connecting medias and plane contact 5, described connecting media 4 is bonding with metal level 3, and described passivation layer 6 is wrapped in the both sides of contact layer and lower contact layer. this kind of Schottky diode, by this kind of structural design, can carry high current and voltage, can higher electric current and voltage by time switch fast, reach the effect as protection diode, described base semiconductor 1 and semiconductor layer 2 adopt same material to make, but the doping content of semiconductor layer 2 is lower than base semiconductor 1, in this diode, semiconductor layer 2 and metal level 3 form the necessary Schottky contacts of Schottky diode work, again by bonding another contact layer of connecting media 4, form the general frame of this diode, this structural strengthening electric current and the voltage bearing capacity of diode.
In the present embodiment, described metal level 3 comprises metal level 1 and forms the metal level 2 31 of migration barrier, described metal level 2 31 is bonding with connecting media 4, metal level 2 34 can avoid other metallic atoms to arrive metal level 1 and then hinder Schottky contacts through connecting media, described base semiconductor 1 has N-shaped doping, described metal level 2 31 is made of titanium, described connecting media layer 4 and metal level 3 are each made of aluminum, these materials have ensured that each level all can bring into play useful effect in this diode, described plane contact body 5 lower ends are provided with metal contact layer 7, in the nonmetallic situation of plane contact body 5, metal contact layer 7 can make outside form and be connected with diode, described upper contact layer and lower contact layer all be arranged in parallel, described passivation layer 6 is obliquely installed with the joint face of upper contact layer and lower contact layer, be obliquely installed the normal work that can ensure diode under condition of high voltage.
Based on above-mentioned; the present invention can be carried high current and voltage in the time of work; and can higher electric current and voltage by time switch fast; reach the effect as protection diode; in this diode, semiconductor layer and metal level form the necessary Schottky contacts of Schottky diode work, then by bonding another contact layer of connecting media, form the general frame of this diode; this structural strengthening electric current and the voltage bearing capacity of diode, be worthy to be popularized.
As known by the technical knowledge, the present invention can realize by other the embodiment that does not depart from its Spirit Essence or essential feature. Therefore, above-mentioned disclosed embodiment, with regard to each side, all just illustrates, and is not only. Within the scope of the present invention all or be all included in the invention in the change being equal in scope of the present invention.
Claims (5)
1. a Schottky diode, it is characterized in that, comprise contact layer, lower contact layer and passivation layer, described upper contact layer comprises base semiconductor and schottky contact layer, described schottky contact layer comprises semiconductor layer and metal level, and described base semiconductor, semiconductor layer and metal level be stacked setting from top to bottom, and described lower contact layer comprises connecting media layer and plane contact, described connecting media and metal bonding layer, described passivation layer is wrapped in the both sides of contact layer and lower contact layer.
2. a kind of Schottky diode according to claim 1, is characterized in that: described metal level comprises the metal level two of metal level one and formation migration barrier, and described metal level two is bonding with connecting media.
3. a kind of Schottky diode according to claim 1, is characterized in that: described base semiconductor has N-shaped doping, and described metal level two is made of titanium, and described connecting media layer and metal level are each made of aluminum.
4. a kind of Schottky diode according to claim 1, is characterized in that: described plane contact body lower end is provided with metal contact layer.
5. a kind of Schottky diode according to claim 1, is characterized in that: described upper contact layer and lower contact layer all be arranged in parallel, and the joint face of described passivation layer and upper contact layer and lower contact layer is obliquely installed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610075438.5A CN105609570A (en) | 2016-02-03 | 2016-02-03 | Schottky diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610075438.5A CN105609570A (en) | 2016-02-03 | 2016-02-03 | Schottky diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105609570A true CN105609570A (en) | 2016-05-25 |
Family
ID=55989337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610075438.5A Pending CN105609570A (en) | 2016-02-03 | 2016-02-03 | Schottky diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105609570A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010050315A (en) * | 2008-08-22 | 2010-03-04 | Asahi Kasei Toko Power Device Corp | Schottky barrier diode |
| CN102738247A (en) * | 2011-03-31 | 2012-10-17 | 赛米控电子股份有限公司 | Schottky diode and corresponding production method |
| CN104428899A (en) * | 2012-06-06 | 2015-03-18 | 日本麦可罗尼克斯股份有限公司 | Electrode structure of solid type rechargeable battery |
| CN205542800U (en) * | 2016-02-03 | 2016-08-31 | 泰州优宾晶圆科技有限公司 | Schottky diode |
-
2016
- 2016-02-03 CN CN201610075438.5A patent/CN105609570A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010050315A (en) * | 2008-08-22 | 2010-03-04 | Asahi Kasei Toko Power Device Corp | Schottky barrier diode |
| CN102738247A (en) * | 2011-03-31 | 2012-10-17 | 赛米控电子股份有限公司 | Schottky diode and corresponding production method |
| CN104428899A (en) * | 2012-06-06 | 2015-03-18 | 日本麦可罗尼克斯股份有限公司 | Electrode structure of solid type rechargeable battery |
| CN205542800U (en) * | 2016-02-03 | 2016-08-31 | 泰州优宾晶圆科技有限公司 | Schottky diode |
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| C10 | Entry into substantive examination | ||
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160525 |
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| WD01 | Invention patent application deemed withdrawn after publication |