CN105607349B - PI liquid coating method - Google Patents
PI liquid coating method Download PDFInfo
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- CN105607349B CN105607349B CN201610143237.4A CN201610143237A CN105607349B CN 105607349 B CN105607349 B CN 105607349B CN 201610143237 A CN201610143237 A CN 201610143237A CN 105607349 B CN105607349 B CN 105607349B
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- substrate
- light shield
- area
- liquid coating
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
- G02F1/133723—Polyimide, polyamide-imide
Abstract
The present invention provides a kind of PI liquid coating method, provide first light shield and second light shield of the length respectively with substrate width and equal length, and in the first shading region and the second shading region that the edge setting width where the first light shield and the second light shield broadside is frame glue width, extreme ultraviolet light source is rotated by 90 ° after carrying out first time irradiation to substrate by the first light shield, second is carried out to substrate by the second light shield again to irradiate, second area on substrate is irradiated by extreme ultraviolet light twice, and organic concentration is lower；Number is irradiated less than twice in first area, and organic concentration is higher, and PI liquid is made to be not easy to diffuse to first area from second area, and the precision of PI liquid coating is controlled with this, the quality of alignment film is promoted, reduces the defect of product.
Description
Technical field
The present invention relates to technical field of liquid crystal display more particularly to a kind of PI liquid coating methods.
Background technique
With the development of display technology, liquid crystal display (Liquid Crystal Display, LCD) and organic light emission two
The flat display apparatus such as pole pipe display (Organic Light Emitting Diode, OLED) because have high image quality, power saving,
The advantages that fuselage is thin and has a wide range of application, and it is widely used in mobile phone, TV, personal digital assistant, digital camera, notes
The various consumer electrical products such as this computer, desktop computer, become the mainstream in display device.
Liquid crystal display on existing market is largely backlight liquid crystal display comprising liquid crystal display panel and back
Optical mode group (backlight module).The working principle of liquid crystal display panel is in thin-film transistor array base-plate (Thin
Film Transistor Array Substrate, TFT Array Substrate) and colored filter substrate (Color
Filter, CF) between pour into liquid crystal molecule, and apply driving voltage on two plate bases to control the rotation side of liquid crystal molecule
To, by the light refraction of backlight module come out generate picture.
In order to arrange liquid crystal molecule according to specific direction of rotation, need in thin-film transistor array base-plate and coloured silk
The inside of colo(u)r filter substrate makes alignment film, and alignment film can be used for limiting the orientation state of liquid crystal molecule.Traditional alignment film
Production method is will to be sprayed on dissolved with the PI of high-molecular compound (Polyimide, polyimides) liquid and need to make alignment film
On real estate, PI liquid is heated later or with ultraviolet light PI liquid, the high-molecular compound made it dissolve generates polymerization reaction, shape
At the long-chain macromolecule solid polymer for having pre-tilt angle, the active force between these polymer and liquid crystal molecule is stronger, makes liquid crystal
Molecule is arranged according to the direction of pre-tilt angle.
In the coating process of practical PI liquid, the coating of PI film is usually influenced due to the state of TFT or CF substrate surface
Effect.PI liquid is usually hydroaropic substance, and it is uneven to be easy diffusion on the more surface of organic substance residues, and then leads to TFT-LCD
There is broken bright spot in product, influences the quality of product.In addition, during carrying out the coating of PI liquid using the method for inkjet printing,
The precision that the coating of PI liquid is generally controlled by PI liquid change in pattern, so that PI liquid is uniformly coated to the display area of substrate
In, but this method may cause the diffusion of PI liquid and exceed when state is inconsistent on the surface of the substrate, and then influence frame glue coating or
It generates periphery defect (defect).
Summary of the invention
The purpose of the present invention is to provide a kind of PI liquid coating methods, can improve the precision of PI liquid coating, improve orientation
Film at film quality, prevent the diffusion of PI liquid from exceeding, reduce the defect of product.
To achieve the above object, the present invention provides a kind of PI liquid coating method, comprising the following steps:
Step 1 provides a substrate, a super ultraviolet light source, one first light shield, one second light shield and a conveying machine；
The length of first light shield is equal to the width of substrate；
First light shield includes: one first transparent area and is located at the both ends of the first transparent area along first light
First shading region of two strips that the width direction of cover extends；
The length of second light shield is equal to the length of substrate；
Second light shield includes: the second transparent area and is located at the both ends of the second transparent area along second light shield
Width direction extend two strips the second shading region；
First light shield is set under super ultraviolet light source by step 2, is placed a substrate on conveying machine, is made the one of substrate
Broadside is aligned with a long side of the first light shield, and conveying machine starts to transmit substrate, and super ultraviolet light source passes through the first light shield pair
Substrate is irradiated, until another broadside of substrate is also aligned with another long side of the first light shield；
Second light shield is set under super ultraviolet light source by step 3, will be put again after substrate clockwise or counterclockwise 90 °
It sets on conveying machine, is aligned a long side of substrate with a long side of the second light shield, conveying machine starts to transmit substrate,
Super ultraviolet light source is irradiated substrate by the second light shield, until another long side of substrate and the second light shield is another long
Until side is aligned, to form organic concentration different first area and second area on substrate, the first area is
Positioned at the region that the process of the substrate edges is primary and irradiates without passing through extreme ultraviolet light, the second area is positioned at described
The region of the process of substrate center extreme ultraviolet light irradiation twice, the first area surrounds the second area；
Step 4, the second area that PI liquid is coated on to substrate.
Substrate in the step 1 passes through wet-cleaned in previous processing procedure.
Substrate in the step 1 is thin-film transistor array base-plate.
Substrate in the step 1 is colorful film optical filtering substrate.
Substrate in the step 1 is glass substrate.
The organic concentration of the first area is greater than the organic concentration of the second area.
The first area is the region of the base plate coating frame glue, and width is equal to the width of frame glue.
The direction that substrate rotates in the step 3 is clockwise.
The direction that substrate rotates in the step 3 is counterclockwise.
Conveying machine at the uniform velocity transmits substrate in the step 2 and step 3.
Beneficial effects of the present invention: PI liquid coating method provided by the invention, provide length respectively with substrate width and
Substrate length equal the first light shield and the second light shield, and width is set at the edge where the first light shield and the second light shield broadside
For the first shading region and the second shading region of frame glue width, placing a substrate on conveying machine makes extreme ultraviolet linear light by first
Light shield is irradiated substrate, will be irradiated extreme ultraviolet linear light to substrate by the second light shield after 90 ° of substrate rotations later,
Second area due to being located at substrate center is irradiated by extreme ultraviolet light twice, and the organic matter of surface distribution is less, makes PI liquid point
Cloth is uniform, and orientation film quality is preferable；Once irradiating is passed through in first area part, partially that by irradiation, surface distribution does not have
Machine object is more, and the different region of organic concentration is generated on substrate, and PI liquid is not easy to diffuse to first area from second area, can
Improve PI liquid coating accuracy, prevent PI liquid diffusion exceed, influence frame glue coating or generate periphery defect, promoted alignment film at
Film quality reduces the defect of product.
Detailed description of the invention
For further understanding of the features and technical contents of the present invention, it please refers to below in connection with of the invention detailed
Illustrate and attached drawing, however, the drawings only provide reference and explanation, is not intended to limit the present invention.
In attached drawing,
Fig. 1 is the flow chart of the PI liquid coating method in the present invention；
Fig. 2 is the structure chart of the first light shield of step 1 in PI liquid coating method of the invention；
Fig. 3 is the structure chart of the second light shield of step 1 in PI liquid coating method of the invention；
Fig. 4 is the left view schematic diagram of step 2 in PI liquid coating method of the invention；
Fig. 5 is the schematic top plan view of step 2 in PI liquid coating method of the invention；
Fig. 6 is the left view schematic diagram of step 3 in PI liquid coating method of the invention；
Fig. 7 is the schematic top plan view of step 3 in PI liquid coating method of the invention；
Fig. 8 is the schematic diagram for irradiating metacoxal plate in PI liquid coating method of the invention by extreme ultraviolet light twice.
Specific embodiment
Further to illustrate technological means and its effect adopted by the present invention, below in conjunction with preferred implementation of the invention
Example and its attached drawing are described in detail.
Referring to Fig. 1, the present invention provides a kind of PI liquid coating method, comprising the following steps:
Step 1, referring to Fig. 4, and combine Fig. 2 and Fig. 3, a substrate 100, a super ultraviolet light source 200, one first light are provided
Cover 300, one second light shield 400 and a conveying machine 500.
The length of first light shield 300 is equal to the width of substrate 100；
First light shield 300 includes: one first transparent area 320 and is located at the both ends of the first transparent area 320 along institute
State the first shading region 310 of two strips of the width direction extension of the first light shield 300.
The length of second light shield 400 is equal to the length of substrate 100；
Second light shield 400 includes: the second transparent area 420 and is located at the both ends of the second transparent area 420 along described
Second shading region 410 of two strips that the width direction of the second light shield 400 extends.
Specifically, if M, N and K are positive number, the length of the substrate 100 is M, width N, first shading region 310
Width with the second shading region 410 is K.Substrate 100 can be liquid crystal display panel thin-film transistor array base-plate or
Colorful film optical filtering substrate.Preferably, the substrate 100 is glass substrate.
Particularly, the substrate 100 passes through wet-cleaned in previous processing procedure.The super ultraviolet light source 200 can emit
Extreme ultraviolet light (Extreme Ultraviolet Lithography, EUV), when extreme ultraviolet light EUV is irradiated on substrate 100,
The key of organic matter on 100 surface of substrate can be interrupted, the free radical of oxygen (O) is generated, organic matter is decomposed into carbon dioxide (CO2)
With water (H2O), so remove 100 surface of substrate organic matter.
Step 2 please refers to Fig. 4 and Fig. 5, and the first light shield 300 is set under super ultraviolet light source 200, substrate 100 is placed
On conveying machine 500, it is aligned a broadside of substrate 100 with a long side of the first light shield 300, conveying machine 500 is opened
Begin transmission substrate 100, and super ultraviolet light source 200 is irradiated substrate 100 by the first light shield 300, until substrate 100 is another
Until broadside is also aligned with another long side of the first light shield 300.
Referring to FIG. 5, due to the effect of the first light shield 300, it is even relative to super ultraviolet light source 200 on conveying machine 500
It is blocked by the first shading region 310 in the first edge region 111 that edge width where the long side of the substrate 100 of speed movement is K
It is not irradiated to always by extreme ultraviolet light EUV in step 3, and first intermediate region folded by two first edge regions 111
Although 121 are irradiated by extreme ultraviolet light EUV, irradiation time is not grown, and is eliminated the organic moiety on surface.
Step 3 please refers to Fig. 6 and Fig. 7, and the second light shield 400 is set under super ultraviolet light source 200, substrate 100 is rotated
It is placed on conveying machine 500 again after 90 °, is aligned a long side of substrate 100 with a long side of the second light shield 400, passed
Seeing-off deck 500 starts to transmit substrate 100, and super ultraviolet light source 200 is irradiated substrate 100 by the second light shield 400, until base
Until another long side of plate 100 is aligned with another long side of the second light shield 400.
Optionally, the direction of rotation of substrate 100 can be clockwise or counterclockwise.
Referring to FIG. 7, due to the effect of the second light shield 400, it is even relative to super ultraviolet light source 200 on conveying machine 500
It is blocked by the second shading region 410 in step in the second edge region 112 that width is K at edge where 100 broadside of substrate of speed movement
Be not irradiated to always by extreme ultraviolet light EUV in rapid 4, and the second intermediate region 122 folded by second edge region 112 again by
Extreme ultraviolet light EUV irradiation, eliminates the organic moiety on surface further.
Further, the first area 110 different with organic matter state is formed after step 5 on the substrate 100 by step 4
With second area 120, the first area 110 is the process positioned at the substrate frontside edge once and without passing through extreme ultraviolet
The region of light irradiation, the second area 120 are positioned at the area of the process extreme ultraviolet light irradiation twice in 100 center of substrate
Domain, the first area 110 surround the second area 120.The organic concentration of the first area 110 is greater than described second
The organic concentration in region 120.
Specifically, conveying machine at the uniform velocity transmits substrate in the step 2 and step 3.
Step 4, referring to FIG. 6, by PI liquid coating second area 120 on the substrate 100.
Specifically, due to the first intermediate region 121 for being irradiated in step 3 by extreme ultraviolet light EUV in step 4 by super purple
It is overlapping that, which there is part in the second intermediate region 122 that outer illumination is mapped to, this region that partly overlaps is the secondth area on substrate 100
Domain 120 keeps the organic concentration on its surface lower, PI liquid is the since second area 120 is by extreme ultraviolet light irradiation twice
The diffusivity in two regions 120 is preferable, being capable of even spread；The first edge region 111 not being mapped to by extreme ultraviolet illumination in step 3
With in step 4 not by the first area 110 that the summation in the second edge region 112 that extreme ultraviolet illumination is mapped to is on substrate 100,
In first area 110, partial region in step 3 or step 4 by an illumination, and at four of 100 corner of substrate
Region 123 is that first edge region 111 and the intersection in second edge region 112 have not received illumination, therefore first area 110
The organic concentration on surface is higher, and PI liquid is not easy to spread.
Since 120 organic concentration of second area is lower on substrate 100,110 organic concentration of first area is higher, by PI
After the second area 120 of liquid coating on the substrate 100, PI liquid can equably be spread in second area 120, the product of alignment film
Matter is preferable, simultaneously because first area 110 surrounds second area 120 on the substrate 100, and the organic matter of first area 110 is dense
Degree is greater than the organic concentration of the second area 120, and PI liquid is difficult to be diffused into first area 110 from second area 120, into
And it can prevent the diffusion of PI liquid from exceeding, influence frame glue coating or generate periphery defect.First area 110 on substrate 100 is used for
Be coated among follow-up process frame glue in liquid crystal display panel at box processing procedure by thin-film transistor array base-plate and coloured silk
The combination of color film substrate.
In conclusion PI liquid coating method provided by the invention, provide length respectively with substrate width and substrate length
Equal the first light shield and the second light shield, and be that frame glue is wide in the edge setting width where the first light shield and the second light shield broadside
The first shading region and the second shading region of degree, placing a substrate on conveying machine makes extreme ultraviolet linear light by the first light shield to base
Plate is irradiated, and will be irradiated extreme ultraviolet linear light to substrate by the second light shield after 90 ° of substrate rotations later, due to being located at
The second area of substrate center is irradiated by extreme ultraviolet light twice, and the organic matter of surface distribution is less, so that PI liquid is evenly distributed, is matched
It is preferable to film quality；Once irradiating is passed through in first area part, partially that by irradiation, the organic matter of surface distribution is not more,
The different region of organic concentration is generated on substrate, PI liquid is not easy to diffuse to first area from second area, can improve PI liquid
Coating accuracy prevents the diffusion of PI liquid from exceeding, and influences frame glue coating or generates periphery defect, promoted alignment film at film quality,
Reduce the defect of product.
The above for those of ordinary skill in the art can according to the technique and scheme of the present invention and technology
Other various corresponding changes and modifications are made in design, and all these change and modification all should belong to the appended right of the present invention
It is required that protection scope.
Claims (9)
1. a kind of PI liquid coating method, which comprises the following steps:
Step 1, provide a substrate (100), a super ultraviolet light source (200), one first light shield (300), one second light shield (400),
An and conveying machine (500)；
The length of first light shield (300) is equal to the width of substrate (100)；
First light shield (300) includes: one first transparent area (320) and the both ends edge for being located at the first transparent area (320)
The first shading region (310) for two strips that the width direction of first light shield (300) extends；
The length of second light shield (400) is equal to the length of substrate (100)；
Second light shield (400) includes: the second transparent area (420) and is located at the both ends of the second transparent area (420) along institute
State the second shading region (410) of two strips of the width direction extension of the second light shield (400)；
First light shield (300) is set under super ultraviolet light source (200) by step 2, and substrate (100) is placed on conveying machine
(500) on, it is aligned a broadside of substrate (100) with a long side of the first light shield (300), conveying machine (500) starts
It transmits substrate (100), super ultraviolet light source (200) is irradiated substrate (100) by the first light shield (300), until substrate
(100) until another broadside is aligned with another long side of the first light shield (300)；
Second light shield (400) is set under super ultraviolet light source (200) by step 3, is placed on again after substrate (100) is rotated by 90 °
On conveying machine (500), it is aligned a long side of substrate (100) with a long side of the second light shield (400), conveying machine
(500) start to transmit substrate (100), super ultraviolet light source (200) is irradiated substrate (100) by the second light shield (400), directly
Until another long side of substrate (100) is aligned with another long side of the second light shield (400), thus on substrate (100)
Organic concentration different first area (110) and second area (120) are formed, the first area (110) is positioned at described
The process at substrate (100) edge is primary and without the region by the irradiation of extreme ultraviolet light, and the second area (120) is positioned at institute
The region of the process extreme ultraviolet light irradiation twice in substrate (100) center is stated, the first area (110) surrounds the second area
(120), the organic concentration of the first area (110) is greater than the organic concentration of the second area (120)；
Step 4, the second area (120) that PI liquid is coated on to substrate (100).
2. PI liquid coating method as described in claim 1, which is characterized in that the substrate (100) in the step 1 is in previous system
Pass through wet-cleaned in journey.
3. PI liquid coating method as described in claim 1, which is characterized in that the substrate (100) in the step 1 is that film is brilliant
Body pipe array substrate.
4. PI liquid coating method as described in claim 1, which is characterized in that the substrate (100) in the step 1 is colored thin
Membrane filtration photopolymer substrate.
5. PI liquid coating method as described in claim 3 or 4, which is characterized in that the substrate (100) in the step 1 is glass
Glass substrate.
6. PI liquid coating method as described in claim 1, which is characterized in that the first area (110) is the substrate
(100) it is coated with the region of frame glue, width is equal to the width of frame glue.
7. PI liquid coating method as described in claim 1, which is characterized in that the direction that substrate (100) rotates in the step 3
It is clockwise.
8. PI liquid coating method as described in claim 1, which is characterized in that the direction that substrate (100) rotates in the step 3
It is counterclockwise.
9. PI liquid coating method as described in claim 1, which is characterized in that conveying machine in the step 2 and step 3
(500) substrate (100) at the uniform velocity are transmitted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610143237.4A CN105607349B (en) | 2016-03-14 | 2016-03-14 | PI liquid coating method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610143237.4A CN105607349B (en) | 2016-03-14 | 2016-03-14 | PI liquid coating method |
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| CN105607349A CN105607349A (en) | 2016-05-25 |
| CN105607349B true CN105607349B (en) | 2019-01-11 |
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| CN201610143237.4A Active CN105607349B (en) | 2016-03-14 | 2016-03-14 | PI liquid coating method |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105759480A (en) * | 2016-03-29 | 2016-07-13 | 京东方科技集团股份有限公司 | Alignment film preparation method and alignment film preparation device |
| CN107755187B (en) * | 2017-11-15 | 2020-04-28 | 深圳市华星光电半导体显示技术有限公司 | Alignment film coating machine and coating method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104035237A (en) * | 2014-05-30 | 2014-09-10 | 京东方科技集团股份有限公司 | Light alignment film, manufacturing method thereof and liquid crystal displayer |
| CN104722458A (en) * | 2015-04-09 | 2015-06-24 | 武汉华星光电技术有限公司 | Device and method for coating alignment liquid of substrate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5571289B2 (en) * | 2008-02-08 | 2014-08-13 | ピーエスフォー ルクスコ エスエイアールエル | Exposure mask and pattern forming method |
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2016
- 2016-03-14 CN CN201610143237.4A patent/CN105607349B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104035237A (en) * | 2014-05-30 | 2014-09-10 | 京东方科技集团股份有限公司 | Light alignment film, manufacturing method thereof and liquid crystal displayer |
| CN104722458A (en) * | 2015-04-09 | 2015-06-24 | 武汉华星光电技术有限公司 | Device and method for coating alignment liquid of substrate |
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