CN105593400B - Metal oxide target and its manufacture method - Google Patents

Metal oxide target and its manufacture method Download PDF

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Publication number
CN105593400B
CN105593400B CN201480055081.3A CN201480055081A CN105593400B CN 105593400 B CN105593400 B CN 105593400B CN 201480055081 A CN201480055081 A CN 201480055081A CN 105593400 B CN105593400 B CN 105593400B
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metal oxide
sputtering target
powder
zro
microns
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CN105593400A (en
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C.西蒙斯
C.C.施塔尔
J.瓦格纳
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Materion Advanced Materials Germany GmbH
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Wan Tengrong Advanced Materials Germany Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/082—Oxides of alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/06—Metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134—Plasma spraying
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/12—Optical coatings produced by application to, or surface treatment of, optical elements by surface treatment, e.g. by irradiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

The present invention relates to for manufacturing layer, the sputtering target of optical layer is particularly.The invention further relates to layer, particularly optical layer, and for manufacturing the device of sputtering target.In addition, the method the present invention relates to manufacture sputtering target.It is for example as follows according to the present invention：The sputtering target further includes at least one metal oxide or further includes at least one combination being made of at least two metal oxides or further include the combination of alloy form or at least one metal oxide of form of mixtures, to have the sputtering target of metal oxide component by elements Si and Al or its alloy and by least one metal oxide or its combination producing.Metal oxide in the sputtering target is preferably selected from ZrO2、Ta2O5、Y2O3、HfO、CaO、MgO、Ce2O3、Al2O3、TiO2Or Nb2O5Metal oxide.

Description

Metal oxide target and its manufacture method
The present invention relates to for manufacturing layer, the sputtering target of optical layer is particularly.The invention further relates to layer, particularly optics Layer, and for manufacturing the device of sputtering target.In addition, the method the present invention relates to manufacture sputtering target.
The Zr targets for manufacturing scratch resistant coating are known from 2011/0212312 A1 of US.The US specifications describe bag ZrO containing protectiveness2The coating systems of coating.
The target containing zirconium for manufacturing particularly stable layer is known from 2007/0036986 A1 of US.US 2007/ 0036986 A1 is described comprising ZrSiOxNy layers（ZrSiOxNy=ZrSi- oxygen-nitrogen compound）, i.e. ZrSi oxynitride layers Infrared reflective list Ag coating systems.The coating systems are manufactured by sputtering ZrSi targets in the oxygenous and atmosphere of nitrogen.Band is The coating systems of layer are stated characterized by improved durability and tolerance.
Know from 2011/110584 A1 of WO comprising the mechanical resistance and chemical resistance with pyrolytic layer TiO2:ZrO2The coating systems of layer.
Know target from 2006/0159933 A1 of US.It is as covering with ZrSiOxNy layers by layer made of the target Layer and the NbZrOx layers of UV barrier coating systems as intermediate layer.Can be by using SiZr and NbZr targets via sputtering technology system Make these layers.
NbZr targets are known from 2004/0258926 A1 of US, wherein NbZr layers contains the double Ag coating systems of infrared reflective. The NbZr layers is manufactured using NbZr targets, wherein the coating systems are characterized by improved durability and tolerance.
In addition, the target being made of element al, Si, ZrSi is known from 05154950 B2 of JP.In this article, Zr is with ZrSi The form of compound uses.
The shortcomings that above-mentioned prior art and corresponding sputtering target, is, due to using powder when manufacturing the system based on SiZr End, such as Zr or ZrSi powder, producing the potential risk of catching fire and burn for the thermopositive metal property for being attributed to the powder is associated. In addition, the manufacture of corresponding powder is complicated and expensive.
Therefore the purpose of the present invention is provided in particular in operationally easy, safe and simple sputtering target.
Achieved the object of the present invention with the sputtering target comprising elements Si and Al or Si-Al alloys, wherein the sputtering target into One step includes at least one metal oxide or further includes at least one combination being made of at least two metal oxides Or further include the combination of alloy form or at least one metal oxide of form of mixtures, with by elements Si and Al or Its alloy and the sputtering target by least one metal oxide or its combination producing with metal oxide component.
Further achieved the object of the present invention with the sputtering target comprising elements Si or Si alloys, wherein the sputtering target is into one Step comprising at least one metal oxide or further include at least one combination being made of at least two metal oxides or The combination of alloy form or at least one metal oxide of form of mixtures is further included, to pass through Si or its alloy and logical Crossing at least one metal oxide or its combination producing has the sputtering target of metal oxide component.
It is to use metal oxide using an advantage of above-mentioned metal oxide, particularly ZrO2As Zr vehicle groups Divide than using Si-Zr compounds or pure non-oxide Zr powder less expensive, because the metal oxide, particularly ZrO2Quite hold Easily buy and easy to operate.In addition, reduce or typically even prevent metal oxide, such as ZrO2The oxide powder of form it is potential Catch fire and burn risk.Finally, brought using at least one metal oxide component in target and splashed with well known in the prior art Penetrate layer and compare improved mechanical strength and chemical resistance.Furthermore, it is possible to by oxidation Zr and/or oxidation Zr compounds as each From alloying element manufacture mechanical and chemically stable optical layer.
In a Favourable implementations of the sputtering target with Si components and Al components, the metal oxidation in the sputtering target Thing is to be selected from ZrO2、Ta2O5、Y2O3、HfO、CaO、MgO、Ce2O3、Al2O3、TiO2Or Nb2O5Metal oxide.Therefore, at this Can also be there are the combination of Multimetal oxide, such as with TiO in the sputtering target of invention2The ZrO of component2Metal oxide.
In another Favourable implementations of the sputtering target with Si components and Al components, which is to come from ZrO2And Y2O3Combination.
In another Favourable implementations of the sputtering target with Si components and Al components, aluminium content is 1 to 35 atom %, It is preferred that 5 to 30 atom %, particularly preferred 10 to the 20 atom atoms of % or 5 to 10 %.
In another Favourable implementations of the sputtering target with Si components and Al components, metal oxide content for 10 to 50 moles of %, preferably 10 to 20 moles of % or 20 to 40 moles of %.
In another Favourable implementations of the sputtering target with Si components and Al components, oxide alloy ZrO2:Y2O3 There is the Y of 4 to 8 moles of % in the oxide alloy2O3Content.
In a Favourable implementations of the sputtering target with Si components, the metal oxide in the sputtering target is to be selected from ZrO2、Ta2O5、Y2O3、HfO、CaO、MgO、Ce2O3、Al2O3、TiO2Or Nb2O5Metal oxide.Therefore, splashing in the present invention Can also be there are the combination of Multimetal oxide, such as with TiO in shooting at the target2The ZrO of component2Metal oxide.
In another Favourable implementations of the sputtering target with Si components, which is to come from ZrO2And Y2O3 Combination.
In another Favourable implementations of the sputtering target with Si components, metal oxide content is 10 to 50 moles of %, It is preferred that 10 to 20 moles of % or 20 to 40 moles of %.
In another Favourable implementations of the sputtering target with Si components, oxide alloy ZrO2:Y2O3In the oxidation There is the Y of 4 to 8 moles of % in thing alloy2O3Content.
In addition, the present invention relates to by layer made of the sputtering target according to any one of claim 1 to 11, particularly optics Layer.
In addition, the present invention relates to the device for manufacturing the sputtering target according to any one of claim 1 to 11, its feature exists Included in described device and be suitable for instrument of the manufacture according to the sputtering target of any one of claim 1 to 11.
The invention further relates to the sputtering by device manufacturing according to claim 13 according to any one of claim 1 to 11 The method of target.
In addition, the splashing according to any one of claim 1 to 11 the present invention relates to method according to claim 14 or manufacture The method shot at the target, it is characterised in that using plasma spraying process as the manufacture method, wherein the mixture of powders bag Contain
Elements Si and Al or the alloy made of Si and Al
With at least one metal oxide
Or
Elements Si or the alloy made of Si
With at least one metal oxide.
It is preferred that by 0.1 meter to 10 meters of plasma spray technology factory length, about 3 to 4 meters of preferred length and with 2 To 20 millimeters, the preferred sputtering target of 5 to 15 millimeters of layer thickness, preferably pipe target is to manufacture the sputtering target, wherein using Si powder End, Al powder and metal oxide powder or Si powder and metal oxide powder --- it, which is preferably respectively, has ZrO2Component Metal oxide powder form --- as the powder for the plasma spray technology, wherein the dusty spray Have the following property：
With 60 to 90 microns, the Si powder of preferably 75 microns of particle mean size,
With 45 to 75 microns, the Al powder of preferably 60 microns of particle mean size, and
With 15 to 45 microns, the metal oxide powder of preferably 30 microns of particle mean size, preferably with ZrO2Component Metal oxide powder,
To manufacture Si-Al metal oxide sputtering targets,
Or
With 60 to 90 microns, the Si powder of preferably 75 microns of particle mean size, and
With 15 to 45 microns, the metal oxide powder of preferably 30 microns of particle mean size, preferably with ZrO2Component Metal oxide powder,
To manufacture Si metal oxide sputtering targets,
With
In addition, the mixture of admixture of gas, preferably argon gas and hydrogen is used during plasma spray coating.
In order to assess sputtering performance, sputtering target of the invention is in no pulse or pulse DC（Direct current）Sputter and will splash in operation Performance and standard target are penetrated, such as 10 weight % targets of SiAl compare.Main comparison point is the arc discharge of target in this respect （Arcing）The generation of behavior.
, can be by MF as the replacement of DC operations（Intermediate frequency）Operation or RF（Radio frequency）Operation sputtering the present invention target and Optionally it is compared.
Particularly preferably use is by three kinds of powdered ingredients, i.e. Si, Al and ZrO according to the present invention2Or alternative Y2O3Stablize The ZrO of change2Manufactured SiAlZrO2Target.
During particularly preferred target is manufactured by plasma spray coating, generation includes at least phase Si, Al and ZrO2 Target material.Thus manufactured target material shows good sputtering ability during DC, although using electric insulation and it is non-conductive Zirconium ZrO2.The arc discharge behavior of the target and the contrast target of the contrast component comprising SiAl or Si ingredient forms can compare.
Manufacture or DC sputtering performances or the explanation of arc discharge behavior above for sputtering target can also be used for and can convert In with without ZrO2The Si targets or Si-Al targets of the metal oxide component of component.If alternatively, be each free of using having ZrO2The Si targets or Si-Al targets of the metal oxide component of component, explanation above can be diverted to by MF operations or RF operations Sputtering.
Above with at%（Atom %）、mol%（Mole %）And wt%（Weight %）Should also alternatively it be explained for the data of unit It is to include being attributed to the common variation of manufacture method.
Can be with the shape of pipe target or flat target with Si components according to the present invention or the sputtering target of Si components and Al components Formula is built.
With Si components and Al components and ZrO2The particularly preferred embodiment party of the sputtering target of metal oxide component In case, particularly preferably using larger ZrO2Content.
Alternatively, ZrO used in the sputtering target of the present invention2It is the ZrO of stabillzed with yttrium2., according to the invention it is preferred in this hair The ZrO of unstableization is used in bright target2。
According to the present invention, can especially be included respectively according to the sputtering target of claim 1 or claim 7 does not influence sputtering target The inevitable impurity of respective alloy property.
Description has proven to specially suitable some embodiments below.
First, the preferred alloy of the sputtering target of the present invention is enumerated in a tabular form, and wherein sputtering performance is also documented in following table In.
For for example, the manufacture of three kinds of sputtering targets is described below, wherein 0.5 meter of size is experimental test target.
By use Si powder, Al powder and ZrO2The plasma spray technology of powdered ingredients is manufactured with pipe targeted forms 0.5 meter of long SiAl5ZrO235 weight % targets（Experiment 6）.Using having the following property during the plasma spray coating Dusty spray, the i.e. particle mean size of Si powder are 35 microns, and the particle mean size of Al powder is 60 microns and ZrO2Powder is averaged Granularity is 30 microns.
In this respect, for manufacturing SiAl5ZrO2The plasma spraying process of 35 weight % targets is for example in the dress of the present invention Put it is middle by the use of the mixture of argon gas and hydrogen be used as plasma gas carry out.
Alternatively, it can be used according to described above by plasma spray technology with above-mentioned granularity but with other The powder manufacture SiAl5ZrO of component250 weight % pipe targets（Experiment 8）.
Above two target can sputter in DC methods.
Above two target is shown and standard target, such as the performance that 10 weight % targets of SiAl are identical.Similarly, both targets With contrasting target, such as the standard target with 10 weight % of SiAl is compared in sputter procedure respectively with similar low arc discharge Rate（Arcing-Rate）.
Alternatively, method and the device of the invention by manufacturing sputtering target, can by using Si powder, Al powder and Y2O3:ZrO2The plasma spray technology of powdered ingredients manufactures 0.5 meter of long SiAl5Y:ZrO2 35 weight % targets（Experiment 16）. The ZrO in this case2Powder is stabillzed with yttrium.
Stabillzed with yttrium ZrO with 35 weight %2The sputtering target manufactured according to the present invention of component is also brought with contrasting target, Identical DC sputtering performances and arcing rate performance such as 10 weight % targets of SiAl.
Alternatively, according to the present invention can be by the embodiment in MF operations or RF operations sputtering and table optionally more above.
Alternatively, it can be manufactured and sputtered described 0.5 meter long with about 3 meters to about 4 meters long targets, the form of preferably pipe target Experimental test target.Therefore, the sputtering target from the table can have such as about 4 meters of length.
By the sputtering target of the present invention optical layer can be sputtered in DC methods.

Claims (26)

1. the sputtering target for manufacturing layer, it includes elements Si and Al or Si-Al alloys, wherein the sputtering target further includes At least one metal oxide, by elements Si and Al or its alloy and to pass through at least one metal oxide generation tool There is the sputtering target of metal oxide component, it is characterised in that the metal oxide in the sputtering target is to be selected from ZrO2、Ta2O5、 Y2O3、HfO、CaO、MgO、Ce2O3Or Nb2O5Metal oxide.
2. sputtering target according to claim 1, it is characterised in that the layer is optical layer.
3. sputtering target according to claim 1, it is characterised in that the sputtering target further includes at least two metal oxides At least one combination.
4. according to the sputtering target of claim 1 or claim 2, it is characterised in that the metal oxide is to come from ZrO2With Y2O3Combination.
5. sputtering target according to claim 1, it is characterised in that aluminium content is 1 to 35 atom %.
6. sputtering target according to claim 1, it is characterised in that aluminium content is 5 to 30 atom %.
7. sputtering target according to claim 1, it is characterised in that aluminium content is 10 to the 20 atom atoms of % or 5 to 10 %.
8. sputtering target according to claim 1, it is characterised in that the metal oxide content is 10 to 50 moles of %.
9. sputtering target according to claim 1, it is characterised in that the metal oxide content is 10 to 20 moles of % or 20 to 40 Mole %.
10. sputtering target according to claim 4, it is characterised in that ZrO is come from the oxide alloy2And Y2O3Combination Y with 4 to 8 moles of %2O3Content.
11. the sputtering target for manufacturing layer, it includes elements Si or Si alloys, wherein the sputtering target further includes at least one Kind metal oxide, by elements Si or its alloy and by least one metal oxide generation there is metal to aoxidize The sputtering target of thing component, it is characterised in that the metal oxide in the sputtering target is to be selected from ZrO2、Ta2O5、Y2O3、HfO、CaO、 MgO、Ce2O3Or Nb2O5Metal oxide.
12. sputtering target according to claim 11, it is characterised in that the layer is optical layer.
13. sputtering target according to claim 11, it is characterised in that the sputtering target further includes the oxidation of at least two metals At least one combination of thing.
14. according to the sputtering target of claim 11 or claim 12, it is characterised in that the metal oxide is to come from ZrO2With Y2O3Combination.
15. sputtering target according to claim 11, it is characterised in that the metal oxide content is 10 to 50 moles of %.
16. sputtering target according to claim 11, it is characterised in that the metal oxide content for 10 to 20 moles of % or 20 to 40 moles of %.
17. sputtering target according to claim 14, it is characterised in that ZrO is come from the oxide alloy2And Y2O3Combination Y with 4 to 8 moles of %2O3Content.
18. by layer made of the sputtering target according to any one of claim 1 to 17.
19. layer according to claim 18, the layer is optical layer.
20. manufacture is according to the method for the sputtering target of any one of claim 1 to 17, wherein being used as institute using plasma spraying process Manufacture method is stated, wherein using mixture of powders, which includes elements Si and Al or the alloy made of Si and Al With at least one metal oxide or comprising elements Si or made of Si, alloy and at least one metal oxide, its feature exist Metal oxide in the sputtering target is to be selected from ZrO2、Ta2O5、Y2O3、HfO、CaO、MgO、Ce2O3Or Nb2O5Metal oxygen Compound.
21. method according to claim 20, it is characterised in that in order to manufacture the sputtering target, pass through plasma spray technology 0.1 meter to 10 meters of factory length and the target with 2 to 20 millimeters of layer thickness, wherein using Si powder, Al powder and metal oxygen Compound powder or Si powder and metal oxide powder are as the powder for the plasma spray technology, wherein the gold It is to be selected from ZrO to belong to oxide2、Ta2O5、Y2O3、HfO、CaO、MgO、Ce2O3Or Nb2O5Metal oxide, wherein the spraying Powder has the following property：
Si powder with 60 to 90 microns of particle mean size,
Al powder with 45 to 75 microns of particle mean size, and
Metal oxide powder with 15 to 45 microns of particle mean size, to manufacture Si-Al metal oxide sputtering targets,
Or
Si powder with 60 to 90 microns of particle mean size, and
Metal oxide powder with 15 to 45 microns of particle mean size,
To manufacture Si metal oxide sputtering targets,
With
In addition, admixture of gas is used during the plasma spray coating as plasma gas.
22. method according to claim 21, it is characterised in that in order to manufacture the sputtering target, pass through plasma spray coating skill Art factory length is 3 meters to 4 meters, and layer thickness is 5 to 15 millimeters of target.
23. method according to claim 21, it is characterised in that the target manufactured by plasma spray technology is pipe target.
24. method according to claim 21, it is characterised in that the dusty spray has the following property：
Si powder with 75 microns of particle mean sizes,
Al powder with 60 microns of particle mean sizes, and
Metal oxide powder with 30 microns of particle mean size, to manufacture Si-Al metal oxide sputtering targets,
Or
Si powder with 75 microns of particle mean sizes, and
Metal oxide powder with 30 microns of particle mean size,
To manufacture Si metal oxide sputtering targets.
25. according to the method for claim 20 or 21, it is characterised in that the metal oxide powder is with ZrO2The gold of component Belong to oxide powder.
26. according to the method for claim 20 or 21, it is characterised in that during the plasma spray coating using argon gas and The mixture of hydrogen is as plasma gas.
CN201480055081.3A 2013-10-07 2014-10-06 Metal oxide target and its manufacture method Expired - Fee Related CN105593400B (en)

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DE102018112335A1 (en) * 2018-05-23 2019-11-28 Hartmetall-Werkzeugfabrik Paul Horn Gmbh magnetron sputtering
BE1026850B1 (en) * 2018-11-12 2020-07-07 Soleras Advanced Coatings Bv CONDUCTIVE SPUTTER TARGETS WITH SILICON, ZIRCONIUM AND OXYGEN
CN111041432A (en) * 2019-11-26 2020-04-21 广州市尤特新材料有限公司 Rotary zirconia target material and preparation method thereof

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US10475630B2 (en) 2019-11-12
US20160260590A1 (en) 2016-09-08
DE102013016529A1 (en) 2015-04-09

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