CN105590843A - Method for etching inclined hole - Google Patents
Method for etching inclined hole Download PDFInfo
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- CN105590843A CN105590843A CN201410652377.5A CN201410652377A CN105590843A CN 105590843 A CN105590843 A CN 105590843A CN 201410652377 A CN201410652377 A CN 201410652377A CN 105590843 A CN105590843 A CN 105590843A
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- inclined hole
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Abstract
The present invention provides a method for etching an inclined hole. The method comprises: a first etching step of etching an inclined hole in a to-be-etched surface of a silicon chip until the etching depth reaches a preset depth; a deposition step of depositing polymer at the sidewall and the bottom of the inclined hole; a second etching step of only etching the polymer at the bottom of the inclined hole until the polymer at the bottom of the inclined hole is completely consumed; a third etching step of only etching the bottom of the inclined hole until the etching depth reaches a preset depth; repeating the deposition step, the second etching step and the third etching step until a target etching depth is achieved, and removing the polymer deposited on the sidewall of the inclined hole. The method provided by the invention can solve the problems that a bowl-shaped morphology is formed at the top of an inclined hole and the sidewall has high roughness in the prior art, can improve morphology of the inclined hole, and can improve process quality.
Description
Technical field
The invention belongs to microelectronic processing technique field, be specifically related to a kind of inclined hole lithographic method.
Background technology
Silicon through hole technology (throughsiliconvia, hereinafter to be referred as TSV) is a kind of chip interconnectsTechnology. Because TSV technology can make chip in the stacking density maximum of three-dimensional, can makeThe interconnection line between chip the shortest, appearance and size is minimum, thereby greatly improve chip speed andThe performance of low-power consumption, therefore, becomes state-of-the-art a kind of technology in current Electronic Encapsulating Technology.
TSV technique comprises through hole production process, is mainly to pass through plasma dry at presentEtching realizes etching through hole, and wherein, through hole comprises straight hole and inclined hole, and so-called straight hole refers to itThe through hole that inwall is vertical with its bottom surface, so-called inclined hole refers to the logical of its inwall phase and its inclined bottom surfaceHole. At present, generally adopt conventional lithographic method to realize the making of inclined hole, particularly, simultaneouslyPass into etching gas and deposition gases, so that etching operation and depositing operation carry out simultaneously, and logicalThe ratio of process control etching gas and deposition gases of crossing is controlled etching and deposition ratio,Thereby realize the etching of inclined hole.
But, adopt above-mentioned inclined hole lithographic method inevitably can exist in actual applicationsFollowing problem: the method can not effectively be controlled the pattern of opening, makes the top of inclined hole form oneQuiescent centre, individual flow field, gas inlet and outlet difficulty in this quiescent centre, flow field, thereby cause gasThe body holdup time obviously extends, thereby causes inclined hole top isotropic etching to become abnormal tightHeavy, be embodied in inclined hole top and form bowl-shape (Bowing) pattern as shown in Figure 1,But also can increase the roughness on inclined hole sidewall.
Summary of the invention
The present invention is intended at least solve one of technical problem existing in prior art, has proposed oneKind of inclined hole lithographic method, its can solve in prior art inclined hole top be formed with bowl-shape pattern andThe high problem of roughness of sidewall, thus the pattern of inclined hole can be improved, and then can improve workSkill quality.
For one of addressing the above problem, the invention provides a kind of inclined hole lithographic method and comprise followingStep: the first etch step, etching inclined hole on the surface to be etched of silicon chip, until it reachesPredetermined depth; Deposition step, in the sidewall of described inclined hole and the polymerization of bottom surface deposition preset thicknessThing; The second etch step, the only polymer on inclined hole bottom surface described in etching, until complete by itConsume; The 3rd etch step, only inclined hole bottom surface described in etching, until it reaches predetermined depth;Repeat above-mentioned deposition step and the second etch step, the 3rd etch step, until obtain orderMark etching depth, then gets rid of the polymer depositing on the sidewall of inclined hole.
Wherein, described deposition step is deposited on thickness on described sidewall and the angle of described inclined holeSize is inversely proportional to; The angle of described inclined hole refers to the supplementary angle of angle between its sidewall and its bottom surface.
Wherein, the etching depth of described the first etch step and/or described the 3rd etch step and instituteThe smoothness of stating inclined hole sidewall is inversely proportional to.
Wherein, in described the first etch step and/or the 3rd etch step, described silicon chip is handed overFor carrying out etching operation and depositing operation, to realize etching predetermined depth.
Wherein, in described deposition step, using plasma depositing operation is at described inclined holeDeposited polymer on sidewall and bottom surface.
Wherein, the process gas of described plasma deposition process comprises carbon fluorine type gas.
Wherein, described carbon fluorine type gas comprises C4F8And/or C5F8Gas.
Wherein, the scope of described plasma deposition process exciting power is at 300～5000W; PartiallyThe scope of voltage power is at 0～50W.
Wherein, in described the second etch step, described in using plasma etching technics etchingPolymer on inclined hole bottom surface.
Wherein, the technological parameter of described plasma etch process comprises: the scope of exciting powerAt 300～5000W; The scope of substrate bias power is at 10～200W.
Wherein, the process gas in the technological parameter of described plasma etch process comprises CFx、CHxFy、Cl2, HBr and SF6In one or more.
Wherein, the technological parameter of described plasma etch process also comprises gas carrier, and carrier gasBody comprises Ar, N2, He and O2In one or more.
Wherein, adopt wet method or plasma dry etching to remove gathering on described inclined hole sidewallCompound.
The present invention has following beneficial effect:
Inclined hole lithographic method provided by the invention, it is by the first etch step, treating of silicon chipEtching inclined hole on etching surface, until it reaches predetermined depth; Deposition step, in the side of inclined holeDeposited polymer on wall and bottom surface; The second etch step, the only polymer on etching inclined hole bottom surface,Until it is consumed completely; The 3rd etch step, only inclined hole bottom surface described in etching, until it reachesTo predetermined depth; And repeat deposition step, the second etch step and the 3rd etching stepSuddenly,, until obtain the target etch degree of depth, can make inclined hole bottom surface diameter along with etching depth groundIncrease and reduce gradually, thereby after obtaining the target etch degree of depth, then getting rid of the side of inclined holeThe polymer depositing on wall and bottom surface, can obtain the inclined hole of actual required angle. And, thisThe inclined hole lithographic method that invention provides compared with prior art, does not need to pass into etching gas simultaneouslyAnd deposition gases, and control by the ratio of process control etching gas and deposition gasesEtching and deposition ratio are carried out etching inclined hole, thus can avoid inclined hole top form bowl-shape pattern andReduce the roughness on inclined hole sidewall, thereby can improve the pattern of inclined hole, and then can improveProcessing quality.
Brief description of the drawings
Fig. 1 is the electron-microscope scanning figure that adopts the inclined hole of existing inclined hole lithographic method making;
The flow chart of the inclined hole lithographic method that Fig. 2 provides for the embodiment of the present invention;
Fig. 3 a carries out the first etch step view afterwards for the 1st time;
Fig. 3 b carries out deposition step view afterwards for the 1st time;
Fig. 3 c carries out the second etch step view afterwards for the 1st time;
Fig. 3 d carries out the first etch step view afterwards for the 2nd time;
Fig. 3 e carries out deposition step view afterwards for the 2nd time;
Fig. 3 f carries out the second etch step view afterwards for the 2nd time;
Fig. 3 g carries out the first etch step view afterwards for the 3rd time;
Fig. 3 h carries out deposition step view afterwards for the 3rd time;
Fig. 3 i carries out the second etch step view afterwards for the 3rd time;
Fig. 3 j is that the 4th is carried out the first etch step view afterwards;
Fig. 3 k is that the first structure of the inclined hole that obtains after the polymer of removing on inclined hole sidewall is shownIntention;
Fig. 4 is that the second structure of the inclined hole of the inclined hole lithographic method acquisition shown in application drawing 2 is shownIntention; And
Fig. 5 is that the third structure of the inclined hole of the inclined hole lithographic method acquisition shown in application drawing 2 is shownIntention.
Detailed description of the invention
For making those skilled in the art understand better technical scheme of the present invention, below in conjunction withAccompanying drawing is described in detail inclined hole lithographic method provided by the invention.
The flow chart of the inclined hole lithographic method that Fig. 2 provides for the embodiment of the present invention. Refer to Fig. 2,The inclined hole lithographic method that the present embodiment provides, comprises the following steps:
The first etch step, etching inclined hole on the surface to be etched of silicon chip, until it reaches pre-If the degree of depth;
Deposition step, at sidewall and the bottom surface deposited polymer of inclined hole;
The second etch step, the only polymer on etching inclined hole bottom surface, until consume it completely;
The 3rd etch step, only inclined hole bottom surface described in etching, until it reaches predetermined depth;
Repeat above-mentioned deposition step, the second etch step and the 3rd etch step, until obtainObtain the target etch degree of depth, then get rid of the polymer depositing on the sidewall of inclined hole.
The tool of the inclined hole lithographic method providing below in conjunction with Fig. 3 a～Fig. 3 k detailed description the present embodimentBody running process. Particularly, first, carry out the first etch step, default etching depth is a1,After the first etch step completes, as shown in Figure 3 a, now, the degree of depth of inclined hole is a1, the endFace diameter is b1.
Then, carry out successively deposition step and the second etch step the 1st time, deposition step completesAfterwards as shown in Figure 3 b, the second etch step completes afterwards as shown in Figure 3 c, now, and inclined holeThe degree of depth do not change, be still a1; And the bottom surface diameter of inclined hole is b2, b2 < b1, andB2 ≈ b1-2*c, wherein, c is the thickness of the polymer that deposits on inclined hole sidewall.
Then, carry out the 3rd etch step the 1st time, default etching depth is a1, at the 3rd quarterAfter erosion step completes, as shown in Figure 3 d, now, the degree of depth of inclined hole is 2a1, bottom surface diameterRemaining unchanged, is still b2.
Then, carry out successively deposition step and the second etch step the 2nd time, deposition step completesAfterwards as shown in Figure 3 e, the second etch step complete after as shown in Fig. 3 f, now, inclined holeThe degree of depth does not change, and is still 2a1; And the bottom surface diameter of inclined hole is b3, b3 < b2, andb3≈b2-2*c。
Then, carry out the 3rd etch step the 2nd time, default etching depth is a1, at the 3rd quarterAfter erosion step completes, as shown in Fig. 3 g, now, the degree of depth of inclined hole is 3a1, bottom surface diameterRemaining unchanged, is still b3.
Then, carry out successively deposition step and the second etch step the 3rd time, deposition step completesAfterwards as shown in Fig. 3 h, after the second etch step completes as shown in Fig. 3 i, now, inclined holeThe degree of depth does not change, and is still 3a1; And the bottom surface diameter of inclined hole is b4, b4 < b3, andb4≈b3-2*c。
Then, carry out the 3rd etch step the 3rd time, default etching depth is a1, at the 3rd quarterAfter erosion step completes, as shown in Fig. 3 j, now, the degree of depth of inclined hole is 4a1, bottom surface diameterRemaining unchanged, is still b4.
In the present embodiment, because the target etch degree of depth is 4a1, therefore, carry out at the 3rd timeAfter three etch step, can complete the target etch degree of depth, that is to say the target etch degree of depth etc.In the etching depth of the first etch step and the etching depth sum of three order three etch step.
Then, get rid of the polymer depositing on the sidewall of inclined hole, can obtain actual required angleThe inclined hole of degree A, the angle A of inclined hole refers to the supplementary angle of angle B between its sidewall and its bottom surface,As shown in Fig. 3 k.
As from the foregoing, the inclined hole lithographic method that the embodiment of the present invention provides is above-mentioned heavy by repeatingLong-pending step, the second etch step and the 3rd etch step, the bottom surface diameter that can make inclined hole withEtching depth ground and increase and reduce gradually, thereby after obtaining the target etch degree of depth, then goRemove the polymer depositing on the sidewall of inclined hole, can obtain the inclined hole of actual required angle A.And the inclined hole lithographic method that the embodiment of the present invention provides, with the inclined hole of etching in prior artCompare, do not need to pass into etching gas and deposition gases simultaneously, and carve by process controlThe ratio of erosion gas and deposition gases is controlled etching and deposition ratio and realizes the etching of inclined hole,Thereby can avoid inclined hole top to form bowl-shape pattern and reduce the roughness on inclined hole sidewall, fromAnd can improve the pattern of inclined hole, and then can improve processing quality.
Particularly, in first etch step and/or the 3rd etch step of the present embodiment, adoptTo silicon chip hocket etching operation and depositing operation, to realize etching predetermined depth. ThisIn situation, particularly, the technological parameter of depositing operation comprises: chamber pressure is 60mT; SwashEncouraging power is 1500W; Substrate bias power is 0W; Deposition gases is C4F8, and C4F8StreamAmount is 150sccm; Process time is 4s; The technological parameter of etching operation comprises: chamber pressureFor 60mT; Exciting power is 2000W; Substrate bias power is 20W; Etching gas is SF6，And SF6Flow be 220sccm; Process time is 6s.
In above-mentioned deposition step, using plasma depositing operation is in sidewall and the bottom surface of inclined holeUpper deposited polymer. In this case, preferably, the technique ginseng of plasma deposition processNumber comprises: the scope of exciting power is at 300～5000W, and higher excitation power supply power can be carriedHigh deposition effect; The scope of substrate bias power is at 0～50W, lower substrate bias power be conducive to each toSame sex deposition, thus be conducive to the polymeric layer that deposition uniformity is good; Process gas comprises carbon fluorineClass gas, preferably, process gas selects carbon number of fluorine atoms than high gas, for example, carbon fluorineClass gas comprises C4F8And/or C5F8Gas, this can make deposition effect obvious, thereby canImprove deposition efficiency, and then can improve process efficiency.
Particularly, in above-mentioned deposition step, the technological parameter of plasma deposition process comprises:Chamber pressure is 60mT; Exciting power is 1500W; Substrate bias power is 0W; Deposition gasesFor C4F8, and C4F8Flow be 150sccm; Process time is 30s.
And in deposition step, the thickness basis being deposited on sidewall is related to setting as follows:The angle A size of thickness and inclined hole is inversely proportional to. Particularly, be deposited on for realizing control polymerThickness on sidewall, can realize by multiple parameters of controlling plasma deposition process.For example, can be by arranging under the prerequisite that other parameters are certain, the adjusting process time realizes,In this case, the process time arranges according to following rule: process time and inclined holeAngular dimension is inversely proportional to. If be appreciated that, the process time is shorter, is deposited on inclined hole sidewallThe thickness of polymer less, particularly, as shown in Figure 4, the process time of its deposition stepBe less than the process time of deposition step in Fig. 3 a～Fig. 3 k, therefore, on the inclined hole sidewall in Fig. 4The thickness c1 of the polymer of deposition is less than the c in Fig. 3 a～Fig. 3 k, in this case, sameThrough after the above-mentioned similar course of work, the angle A 1 of the inclined hole of acquisition is greater than the angle in Fig. 3 kDegree A.
In above-mentioned the second etch step, on using plasma etching technics etching inclined hole bottom surfacePolymer. In this case, preferably, the technological parameter bag of plasma etch processDraw together: the scope of exciting power is at 300～5000W, and higher exciting power can improve etching effectRate, thus process efficiency can be improved; The scope of substrate bias power is at 10～200W, and higher is inclined to one sideVoltage power is conducive to anisotropic etching, thereby can make the polymer etching in inclined hole bottom surfaceAfter falling, on inclined hole sidewall, keep more polymer, thereby can improve processing quality. And,Process gas in the technological parameter of plasma etch process comprises CFx, CHxFy、Cl2、HBr and SF6In one or more; Technological parameter also comprises gas carrier, and gas carrier comprisesAr、N2, He and O2In one or more.
Particularly, in above-mentioned the second etch step, the technological parameter of plasma etch processComprise: chamber pressure is 30mT; Exciting power is 2000W; Substrate bias power is 50W; CarveErosion gas is SF6, and SF6Flow be 220sccm; Gas carrier is O2, and O2StreamAmount is 20sccm; Process time is 10s.
And, in the present embodiment, can adopt wet method or plasma dry etching to remove tiltedlyPolymer on the sidewall in hole. Particularly, wet method comprise adopt acetone and other organic solvent gatherThe removal of compound; The carrying out that plasma dry etching can adopting process gas is oxygen wait fromDaughter etching.
As from the foregoing, at above-mentioned the first etch step, deposition step, the second deposition step andIn three etch step, and remove the polymerization on inclined hole sidewall after etching target predetermined depthIn the step of thing, all can adopt same plasma apparatus to realize, be each stepNeeded technological parameter difference, therefore, the inclined hole lithographic method that the embodiment of the present invention provides,Only need a kind of equipment to complete, thereby can reduce the cost of equipment, and then can improveEconomic benefit.
It should be noted that, in the present embodiment, the first etch step and every order three etching stepsRapid etching depth is identical, is respectively a1, and it is thick that each deposition step deposits on inclined hole sidewallSpend identically, be respectively c. But the present invention is not limited thereto, in actual applications, canAccording to actual conditions specifically arrange the parameter of each the first etch step and/or deposition step different orIdentical, so that each degree of depth of etching and/or the thickness of deposition are similar and different.
Also it should be noted that, if be appreciated that the first etch step and/or the 3rd etch stepEtching depth darker, or the thickness that deposition step deposits on inclined hole sidewall is larger, tiltedlyThe step forming on the sidewall of hole is larger, and the smoothness of inclined hole sidewall is less. See also Fig. 4And Fig. 5, in Fig. 5, the etching depth of first and third etch step is respectively first and third in Fig. 4The half of the etching depth of etch step, and in Fig. 5, deposition step is heavy on inclined hole sidewallLong-pending thickness is the half of the thickness of deposition step deposition in Fig. 4, and comparison diagram 4 and Fig. 5 canObviously find out, the step forming on inclined hole sidewall in Fig. 5 is less than in Fig. 4 and forms on inclined hole sidewallStep, that is to say, in Fig. 5, the smoothness of inclined hole sidewall is better, thereby can improve tiltedlyThe pattern in hole.
Therefore, in actual applications, the etching of the first etch step and/or the 3rd etch step is darkDegree is according to being related to setting as follows: the smoothness of etching depth and inclined hole sidewall is inversely proportional to. NamelySay, the if desired good inclined hole of the smoothness of inclined hole sidewall, should arrange the first etch stepAnd/or the etching depth of the 3rd etch step is less. Control the first etch step and/or for realizingThe etching depth of three etch step, can be under the certain prerequisite of other parameters, when adjusting processBetween realize.
In addition, the thickness that deposition step deposits on inclined hole sidewall is according to being related to as follows setting: shouldThe smoothness of thickness and inclined hole sidewall is inversely proportional to, and that is to say, if desired inclined hole sidewall is level and smoothSpend good inclined hole, the thickness that deposition step deposits on inclined hole sidewall should be set less.And be deposited on the thickness on sidewall for realizing control polymer in deposition step, can pass through equallyArranging under the prerequisite that other parameters are certain, the adjusting process time realizes.
In addition, it should be noted that, because the target etch degree of depth equals the first etch step and heavyThe multiple repeatedly etching depth sum of the 3rd etch step, therefore, completes the 3rd the last timeAfter etch step, do not need to carry out again deposition step and the second etch step, so directly onlyRemove the polymer depositing on the sidewall of inclined hole.
Be understandable that, above embodiment is only used to illustrate principle of the present invention and adoptsWith illustrative embodiments, but the present invention is not limited thereto. General in this areaLogical technical staff, without departing from the spirit and substance in the present invention, can makeVarious modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (13)
1. an inclined hole lithographic method, is characterized in that, comprises the following steps:
The first etch step, etching inclined hole on the surface to be etched of silicon chip, until it reaches pre-If the degree of depth;
Deposition step, at the sidewall of described inclined hole and the polymer of bottom surface deposition preset thickness;
The second etch step, the only polymer on inclined hole bottom surface described in etching, until complete by itConsume;
The 3rd etch step, only inclined hole bottom surface described in etching, until it reaches predetermined depth;
Repeat above-mentioned deposition step, the second etch step and the 3rd etch step, until obtainObtain the target etch degree of depth, then get rid of the polymer depositing on the sidewall of inclined hole.
2. inclined hole lithographic method according to claim 1, is characterized in that, described depositionThe thickness of step deposition on described sidewall is according to being related to as follows setting: described thickness and described obliqueIt is anti-that the angular dimension in hole becomes, and/or the smoothness of described thickness and described inclined hole sidewall is inversely proportional to;The angle of described inclined hole refers to the supplementary angle of angle between its sidewall and its bottom surface.
3. inclined hole lithographic method according to claim 1, is characterized in that, described firstThe etching depth of etch step and/or described the 3rd etch step is according to being related to as follows setting: described inThe smoothness of etching depth and described inclined hole sidewall is inversely proportional to.
4. inclined hole lithographic method according to claim 1, is characterized in that, describedIn one etch step and/or the 3rd etch step, described silicon chip is hocketed to etching operation with heavyLong-pending operation, to realize etching predetermined depth.
5. inclined hole lithographic method according to claim 1, is characterized in that, described heavyIn long-pending step, using plasma depositing operation deposition on the sidewall of described inclined hole and bottom surface is poly-Compound.
6. inclined hole lithographic method according to claim 5, is characterized in that, described grade fromThe process gas of daughter depositing operation comprises carbon fluorine type gas.
7. inclined hole lithographic method according to claim 6, is characterized in that, described carbon fluorineClass gas comprises C4F8And/or C5F8Gas.
8. inclined hole lithographic method according to claim 5, is characterized in that, described grade fromThe scope of daughter depositing operation exciting power is at 300～5000W; The scope of substrate bias power exists0～50W。
9. inclined hole lithographic method according to claim 1, is characterized in that, describedIn two etch step, the polymer described in using plasma etching technics etching on inclined hole bottom surface.
10. inclined hole lithographic method according to claim 9, is characterized in that, described etc.The technological parameter of plasma etching technique comprises: the scope of exciting power is at 300～5000W; PartiallyThe scope of voltage power is at 10～200W.
11. inclined hole lithographic methods according to claim 9, is characterized in that, described etc.Process gas in the technological parameter of plasma etching technique comprises CFx、CHxFy、Cl2、HBrAnd SF6In one or more.
12. inclined hole lithographic methods according to claim 9, is characterized in that, described etc.The technological parameter of plasma etching technique also comprises gas carrier, and gas carrier comprises Ar, N2、HeAnd O2In one or more.
13. inclined hole lithographic methods according to claim 1, is characterized in that, adopt wetMethod or plasma dry etching are removed the polymer on described inclined hole sidewall.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106276770A (en) * | 2016-09-29 | 2017-01-04 | 苏州工业园区纳米产业技术研究院有限公司 | Substrate, chip of micro-electro-mechanical system and preparation method for chip of micro-electro-mechanical system |
| CN112296377A (en) * | 2020-12-29 | 2021-02-02 | 江苏乐萌精密科技有限公司 | Method for processing qualified inclined hole on surface of metal mask frame with allowance |
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| JP2008264951A (en) * | 2007-04-23 | 2008-11-06 | Seiko Epson Corp | Machining method of inclined shape |
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| CN103400800A (en) * | 2013-08-14 | 2013-11-20 | 中微半导体设备(上海)有限公司 | Bosch etching method |
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| JP2008264951A (en) * | 2007-04-23 | 2008-11-06 | Seiko Epson Corp | Machining method of inclined shape |
| CN101958244A (en) * | 2009-07-21 | 2011-01-26 | 中微半导体设备(上海)有限公司 | Deep reactive ion etching method and gas flow control device thereof |
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| CN112296377A (en) * | 2020-12-29 | 2021-02-02 | 江苏乐萌精密科技有限公司 | Method for processing qualified inclined hole on surface of metal mask frame with allowance |
| CN112296377B (en) * | 2020-12-29 | 2021-05-07 | 江苏乐萌精密科技有限公司 | Method for processing qualified inclined hole on surface of metal mask frame with allowance |
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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Application publication date: 20160518 |