CN105590823A - Rf ion source apparatus - Google Patents
Rf ion source apparatus Download PDFInfo
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- CN105590823A CN105590823A CN201410567634.5A CN201410567634A CN105590823A CN 105590823 A CN105590823 A CN 105590823A CN 201410567634 A CN201410567634 A CN 201410567634A CN 105590823 A CN105590823 A CN 105590823A
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- ion source
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Abstract
Disclosed in the invention is an RF ion source apparatus comprising an arc cavity. The arc cavity is filled with gas; at least one antenna is arranged in the arc cavity; and each antenna is provided with an insulating casing tube. Besides, the ion source apparatus also includes a high-voltage power supply, an RF generator, a matcher connected with the RF generator, a first capacitor, and a second capacitor; the first capacitor is connected with the matcher and a first end portion of the antenna; and a second end portion of the antenna is grounded by the second capacitor. The antenna is used for an electron and the electron and the gas reacts to generate plasma; the high-voltage power supply is connected to the arc cavity, so that the level of the plasma is lifted to a preset level. The provided ion source apparatus has a simple structure; and arrangement of a plurality of power supplies is not required. Moreover, the RF generator, the matcher, and the communication control device and the like work at ground potentials, so that requirements on all components in the ion source apparatus are reduced and the operation security is improved.
Description
Technical field
The present invention relates to a kind of ion source device, particularly relate to a kind of RF (radio frequency) ion source device.
Background technology
Ion source device is one of core component of ion implantation device, as the parts that produce line, itsThe quality of performance has vital impact to the effect of Implantation. If draw in front end ion gunLine be undesirable (for example inhomogeneous in line short transverse, line height is lower etc.), thatThe pressure of downstream Beam Transport Systems will be larger, the line of undesirable form need to be proofreaied and correct to famous dictumThink injection condition. Otherwise, if the line that front end is drawn is just comparatively desirable, to downstream beam transfer be soThe requirement of system has just reduced, and also, than the injection condition that is easier to reach desirable, is more conducive to form high-qualityLine.
A kind of existing ion source device is disclosed in Chinese patent CN1427446A, i.e. Bei Nasi(Bernas) type ion gun, with reference to figure 1, this ion gun comprises the plasma with said ion leadout hole 67Body generation chamber 66. Plasma generation chamber 66 is combined with filament 68 and reflector 70, filament 68 forHeat of emission electronics to be to produce arc discharge between himself and this chamber, and by the unstrpped gas ionization of introducingTo form plasma 72. In the direction of straight line that connects filament and reflector 70, pass through plasmaThe source magnet 74 of body generation chamber 66 outsides applies magnetic field 75 to plasma generation chamber 66 inside. Magnetic field75 and reflector 70 for improving the ionizing efficiency of unstrpped gas 6, to produce high-density plasma 72.
In the scheme shown in Fig. 1, this ion gun has comprised multiple power supplys, for example plasma electrical source 14,Comprising the filament supply 80 of heat filament, arc power 82 and the startup source that produces arc dischargeThe source power supply for magnet coils 84 of magnet 74.
Except the Bei Nasi type ion gun shown in Fig. 1, most of existing ion gun is also to adopt lampSilk heat of emission electronics carrys out the starting the arc, produces thus plasma. And in such ion gun, can notAvoid using multiple power supplys, and these power supplys all will be worked under the current potential being elevated, this is just to power supplyAnd Circuits System (for example needs to arrange isolating transformer and isolates whole Circuits System, again for example at high pressureUnder working environment, be difficult to transmit control instruction with electric wire) higher requirement proposed.
In addition, in existing ion gun, except power supply, also need to control these power supplys and partsControl device and the communication device of transmission instruction to control device, similarly, these control device and communicationDevice is all worked under the current potential being elevated, and this has also improved wanting control device and communication device undoubtedlyAsk.
Moreover, because whole ion source device is worked under high potential, for the consideration of security, generalAll need isolating transformer to be set with isolated high-voltage, this has increased again cost undoubtedly, has increased answering of deviceAssorted degree. And whole ion source device is raised to after high potential, its operation for operating personnelDanger has also increased greatly.
Summary of the invention
The technical problem to be solved in the present invention is to comprise many in order to overcome prior art intermediate ion source apparatusIndividual parts, multiple power supply and control device and communication device, complex structure, to various power supplys and partsHave relatively high expectations, and when work ion source device need to be increased thus behaviour by integral raising to high potentialMake dangerous defect, a kind of RF ion source device is provided, it is simple in structure, without multiple electricity are setSource, and the equipment such as RF generator, adaptation is all to work on ground potential, only plasmaBe raised to high potential, reduced the requirement to all parts in ion source device, electric capacity cuts off straight in additionThe protection of stream, has increased the security of operation.
The present invention solves above-mentioned technical problem by following technical proposals:
A kind of RF ion source device, comprises an electric arc cavity, in this electric arc cavity, is filled with gas, itsFeature is, this electric arc cavity is mid-at least one antenna, and every antenna is all arranged at an insulating sleeveIn, this ion source device also comprises a high voltage source, a RF generator, is connected with this RF generatorAn adaptation and the first electric capacity and the second electric capacity,
Wherein, this first electric capacity connects the first end of this adaptation and this antenna, the second end of this antennaPortion is by this second capacity earth, and this antenna is used for electron emission to produce plasma with this gas effectBody, this high voltage source is connected to this electric arc cavity so that current potential that must this plasma is raised to one defaultCurrent potential, this preset potential is less than or equal to 50,000 volts. Wherein, antenna and RF generator, the equal position of adaptationOn the electromotive force of the earth, only this electric arc cavity and plasma are wherein high pressure suspendings.
In this technical scheme, without multiple power supplys are set, and except the plasma in electric arc cavityBe raised to outside high potential, the miscellaneous part in this ion source device is all to work on ground potential,Be no matter designing requirement concerning parts or from the safety perspective of operation, have very big improvement. SeparatelyOutward, arranging of two electric capacity played good protective effect to ion source device, and it cuts off direct current,Insulating sleeve is damaged or because other reasons produces high pressure, also can protects adaptation and RF to send outRaw device is not affected, and has also reduced operational risk simultaneously.
Preferably, this RF ion source device also comprise this electric arc cavity of an encirclement and this first electric capacity andThe radome of this second electric capacity.
Preferably, between this radome and electric arc cavity, connect one the 3rd electric capacity.
Preferably, this Shielding Case grounding;
More preferably, this radome by a metal tape ground connection so that this radome becomes RF earth-return circuitA part.
Preferably, the sidewall of this electric arc cavity is provided with notch, and the length direction of this notch is parallel to this skyThe length direction of line. " parallel " in the present invention comprised the situation of absolute parallel geometrically and in portionApproximately parallel situation within the scope of part mismachining tolerance.
Preferably, this preset potential is 2 kilovolts-50,000 volts; Preferably, this preset potential is 5 kilovolts-5Wan Fu.
The present invention also provides a kind of RF ion source device, comprises an electric arc cavity, in this electric arc cavity, fills outBe filled with gas, its feature is, this electric arc cavity is mid-at least one antenna, and every antenna all arrangesIn an insulating sleeve, this ion source device also comprise a high voltage source, a RF generator, with this RFAn adaptation and the first electric capacity and the second electric capacity that generator is connected,
Wherein, this first electric capacity connects the first end of this adaptation and this antenna, the second end of this antennaPortion is by this second capacity earth, and this antenna is used for electron emission to produce plasma with this gas effectBody, this high voltage source is connected to this electric arc cavity so that current potential that must this plasma is raised to one defaultCurrent potential, this preset potential is less than or equal to 50,000 volts.
This RF ion source device also comprises one or more generations cusped magnetic field magnetic devices, at this antennaLength direction on, this cusped magnetic field is for being evenly distributed the plasma of this electric arc cavity. Wherein,Antenna and RF generator, adaptation are all positioned on the electromotive force of the earth, only this electric arc cavity and wherein etc.Gas ions is high pressure suspending.
Wherein, this cusped magnetic field also for the electronics that limits antenna transmission to the motion of electric arc cavity inner wall withIncrease the probability of electronics and gas molecule collision.
That is to say, in this technical scheme, except above-mentioned advantage, the introducing of cusped magnetic field hasHelp the generation of plasma, make the electronics of antenna transmission be not easy to clash into the sidewall of electric arc cavity and damageConsumption, electronics just can be limited in electric arc cavity like this, secondary collision gas and produce the machine of plasmaRate has just promoted. Moreover due to the effect of cusped magnetic field, the plasma that ionized gas produces is at antennaLength direction on can form and be uniformly distributed, contribute to drawing of large scale line.
Preferably, this RF ion source device also comprise this electric arc cavity of an encirclement and this first electric capacity andThe radome of this second electric capacity.
Preferably, between this radome and electric arc cavity, connect one the 3rd electric capacity.
Preferably, this Shielding Case grounding;
More preferably, this radome by a metal tape ground connection so that this radome becomes RF earth-return circuitA part.
Preferably, the sidewall of this electric arc cavity is provided with notch, and the length direction of this notch is almost parallel toThe length direction of this antenna.
Preferably, this preset potential is 2 kilovolts-50,000 volts; Preferably, this preset potential is 5 kilovolts-5Wan Fu.
Meeting on the basis of this area general knowledge, above-mentioned each optimum condition, can be combined, i.e. get Ben FaBright each preferred embodiments.
Positive progressive effect of the present invention is:
1, compared with the thermionic ion gun of existing employing filament emission, RF ion gun of the present invention withoutToo much power supply, only adopts a high voltage source, and cooperation RF maker and adaptation just can be at electric arcsIn cavity, form plasma. The minimizing of number of power sources effectively reduces cost, reduced single unit systemComplexity.
2,, in technical scheme of the present invention, all parts in ion source device is all on ground potentialWork, is only that plasma is raised to high potential, and electric arc cavity and plasma are wherein highPressure suspends, and has reduced thus the requirement to all parts in ion source device, and communication control equipmentAlso completely in ground potential, without under high pressure working as prior art; In addition electric capacityCut off the protection of direct current, even if there is the generation of puncturing, also can protect RF maker and adaptation and otherCommunication control equipment is immune, and has increased the security of operation.
3, in the scheme of employing radome, radome both can intercept the electromagnetism of outer bound pair arc chamber bodyDisturb the interference that parts that again can shielding cover inside cause to external world. In addition, connecing of radomeGround arranges and also makes whole ion source device safer in the time that high voltage moves.
4, in a technical scheme of the present invention, having introduced cusped magnetic field can increase electron collision gasThe probability of body molecule can make being again evenly distributed of plasma, and the line of drawing is thus in the length of antennaIn direction, be also uniformly, be particularly conducive to drawing of the even line of large scale.
Brief description of the drawings
Fig. 1 is the schematic diagram of a kind of ion source device in prior art.
Fig. 2 is the structured flowchart of the ion source device of the embodiment of the present invention 1.
Fig. 3 is the schematic diagram of the electric arc cavity of the ion source device of the embodiment of the present invention 2.
Fig. 4 is the line of magnetic induction distribution schematic diagram of cusped magnetic field in the electric arc cavity of the embodiment of the present invention 3.
Detailed description of the invention
Mode below by embodiment further illustrates the present invention, but does not therefore limit the present invention toAmong described scope of embodiments.
Embodiment 1
With reference to figure 2, the RF ion source device described in the present embodiment comprises an electric arc cavity 3, this arc chamberIn body, be filled with gas, and in this electric arc cavity 3, be equipped with at least one antenna 5 (in the present embodiment withAn antenna is example), this antenna is arranged in an insulating sleeve 4, and this insulating sleeve 4 is quartzy material,This ion source device also comprise a high voltage source VCC, a RF generator 1, with this RF generator 1The adaptation 2 and the first capacitor C 1 and the second capacitor C 2 that are connected,
Wherein, this first capacitor C 1 connects the first end (sky in Fig. 2 of this adaptation 2 and this antennaThe left end of line), the second end (right-hand member of antenna in Fig. 2) of this antenna connects by this second capacitor C 2Ground, this antenna 5 for electron emission to produce plasma, this high voltage source VCC with this gas effectBe connected to this electric arc cavity 3 to make the current potential of these gas ions be raised to a preset potential, for example 2Wan Fu.
Wherein, this RF ion source device also comprises this electric arc cavity 3 of an encirclement and this first capacitor C 1Radome 6 with this second capacitor C 2. And, between this radome 6 and electric arc cavity 3, connect oneThe 3rd capacitor C 3.
In addition, this radome passes through a metal tape (not shown) ground connection so that this radome becomesFor a part for RF earth-return circuit.
In this embodiment, be only that this electric arc cavity and plasma are wherein high pressure suspendings, shouldMiscellaneous part in RF ion source device is all to work in ground potential, no matter from handling safetyAngle, or from concerning the requirement of parts, have great improvement.
Embodiment 2
The principle of embodiment 2 is identical with embodiment 1, and special feature is, with reference to figure 3, the present embodimentIn the face shaping of electric arc cavity be cylinder, the sidewall of this electric arc cavity 3 is provided with notch 31, shouldThe length direction of notch 31 is parallel to the length direction of this antenna 5. This notch 31 is for educt beaming flow.
Embodiment 3
The general principle of embodiment 3 is identical with embodiment 1, and difference is also to comprise in the present embodiment:
With reference to figure 4, (view of Fig. 4 is top view, is equal to from the top of the view shown in Fig. 3 downwardSee), this RF ion source device also comprises multiple generations cusped magnetic field magnetic devices 8, in the length of this antennaIn degree direction, this cusped magnetic field is for being evenly distributed the plasma of this electric arc cavity. In this enforcementIn example, multiple magnetic devices 8 are set on the outer wall of electric arc cavity 3, from the direction of overlooking shown in Fig. 4, the line of magnetic induction of the cusped magnetic field that those magnetic devices 8 produce distributes as shown in Figure 4 (at Fig. 4In represent the line of magnetic induction of electric arc inside cavity with Reference numeral B).
Under the effect of cusped magnetic field, plasma will be more even on the length direction of antenna; AndAnd the electronics that antenna is launched under the effect of RF field is difficult for clashing into electric arc cavity under the effect of cusped magnetic fieldSidewall consume, but contribute to secondary collision produce secondary electron form thus a large amount of plasmasBody, thus contribute to the formation of large-size line.
All the other not mentioned part reference examples 1.
Institute's drawings attached is only schematic diagram, in order to clearly demonstrate the structure of RF ion source device, in figureRatio should not be understood to limitation of the present invention.
Although more than described the specific embodiment of the present invention, those skilled in the art should manageSeparate, these only illustrate, and protection scope of the present invention is limited by appended claims. ThisThe technical staff in field is not deviating under the prerequisite of principle of the present invention and essence, can be to these enforcement sidesFormula is made various changes or modifications, but these changes and amendment all fall into protection scope of the present invention.
Claims (12)
1. a RF ion source device, comprises an electric arc cavity, in this electric arc cavity, is filled with gas,It is characterized in that, this electric arc cavity is mid-at least one antenna, and every antenna is all arranged at an insulation sleeveGuan Zhong, this ion source device also comprise a high voltage source, a RF generator, with this RF generator phaseThe adaptation and the first electric capacity and the second electric capacity that connect,
Wherein, this first electric capacity connects the first end of this adaptation and this antenna, the second end of this antennaPortion is by this second capacity earth, and this antenna is for generation of plasma, and this high voltage source is connected to this electricityArc cavity is to make the current potential of these gas ions be raised to a preset potential, and this preset potential is less than or equal to50000 volts.
2. RF ion source device as claimed in claim 1, is characterized in that, this RF ion gun dressPut the radome that also comprises this electric arc cavity of an encirclement and this first electric capacity and this second electric capacity.
3. RF ion source device as claimed in claim 2, is characterized in that, this radome and electric arcBetween cavity, connect one the 3rd electric capacity.
4. RF ion source device as claimed in claim 2, is characterized in that, this Shielding Case grounding;
Preferably, this radome by a metal tape ground connection so that this radome becomes RF earth-return circuitA part.
5. RF ion source device as claimed in claim 1, is characterized in that, the side of this electric arc cavityWall is provided with notch, and the length direction of this notch is parallel to the length direction of this antenna.
6. the RF ion source device as described in any one in claim 1-5, is characterized in that, shouldPreset potential is 2 kilovolts-50,000 volts; Preferably, this preset potential is 5 kilovolts-50,000 volts.
7. a RF ion source device, comprises an electric arc cavity, in this electric arc cavity, is filled with gas,It is characterized in that, this electric arc cavity is mid-at least one antenna, and every antenna is all arranged at an insulation sleeveGuan Zhong, this ion source device also comprise a high voltage source, a RF generator, with this RF generator phaseThe adaptation and the first electric capacity and the second electric capacity that connect,
Wherein, this first electric capacity connects the first end of this adaptation and this antenna, the second end of this antennaPortion is by this second capacity earth, and this antenna is for generation of plasma, and this high voltage source is connected to this electricityArc cavity is to make the current potential of these gas ions be raised to a preset potential, and this preset potential is less than or equal to50000 volts,
This RF ion source device also comprises one or more generations cusped magnetic field magnetic devices, at this antennaLength direction on, this cusped magnetic field is for being evenly distributed the plasma of this electric arc cavity.
8. RF ion source device as claimed in claim 7, is characterized in that, this RF ion gun dressPut the radome that also comprises this electric arc cavity of an encirclement and this first electric capacity and this second electric capacity.
9. RF ion source device as claimed in claim 8, is characterized in that, this radome and electric arcBetween cavity, connect one the 3rd electric capacity.
10. RF ion source device as claimed in claim 9, is characterized in that, this Shielding Case grounding;Preferably, this radome by a metal tape ground connection so that this radome becomes of RF earth-return circuitPoint.
11. RF ion source devices as claimed in claim 7, is characterized in that, this electric arc cavitySidewall is provided with notch, and the length direction of this notch is parallel to the length direction of this antenna.
12. RF ion source devices as described in any one in claim 1-5, is characterized in that,This preset potential is 2 kilovolts-50,000 volts; Preferably, this preset potential is 5 kilovolts-50,000 volts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410567634.5A CN105590823B (en) | 2014-10-22 | 2014-10-22 | RF ion source device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410567634.5A CN105590823B (en) | 2014-10-22 | 2014-10-22 | RF ion source device |
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| CN105590823A true CN105590823A (en) | 2016-05-18 |
| CN105590823B CN105590823B (en) | 2019-07-05 |
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| CN201410567634.5A Active CN105590823B (en) | 2014-10-22 | 2014-10-22 | RF ion source device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109300758A (en) * | 2018-09-27 | 2019-02-01 | 德淮半导体有限公司 | Ion Implantation Equipment and ion source generating device |
| CN111741584A (en) * | 2020-05-26 | 2020-10-02 | 中国原子能科学研究院 | D+Ion source |
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| CN1150180A (en) * | 1995-11-15 | 1997-05-21 | 哈尔滨工业大学 | Plasma immersion ion implantation apparatus for material surface modifying |
| US6164241A (en) * | 1998-06-30 | 2000-12-26 | Lam Research Corporation | Multiple coil antenna for inductively-coupled plasma generation systems |
| CN102449739A (en) * | 2009-04-16 | 2012-05-09 | 瓦里安半导体设备公司 | Conjugated icp and ecr plasma sources for wide ribbon ion beam generation and control |
| KR20130092901A (en) * | 2012-02-13 | 2013-08-21 | (주)뉴옵틱스 | Apparatus for extracting the ion beam source and for treating the substrate by ion beam source using icp antenna of pole type |
| CN103269557A (en) * | 2013-04-28 | 2013-08-28 | 大连民族学院 | Radio frequency ion source |
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2014
- 2014-10-22 CN CN201410567634.5A patent/CN105590823B/en active Active
Patent Citations (5)
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| CN1150180A (en) * | 1995-11-15 | 1997-05-21 | 哈尔滨工业大学 | Plasma immersion ion implantation apparatus for material surface modifying |
| US6164241A (en) * | 1998-06-30 | 2000-12-26 | Lam Research Corporation | Multiple coil antenna for inductively-coupled plasma generation systems |
| CN102449739A (en) * | 2009-04-16 | 2012-05-09 | 瓦里安半导体设备公司 | Conjugated icp and ecr plasma sources for wide ribbon ion beam generation and control |
| KR20130092901A (en) * | 2012-02-13 | 2013-08-21 | (주)뉴옵틱스 | Apparatus for extracting the ion beam source and for treating the substrate by ion beam source using icp antenna of pole type |
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Non-Patent Citations (1)
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| 王岩等: "外加会切磁场对感应耦合等离子体放电过程的影响", 《第十六届全国等离子体科学技术会议暨第一届全国等离子体医学研讨会会议摘要集》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109300758A (en) * | 2018-09-27 | 2019-02-01 | 德淮半导体有限公司 | Ion Implantation Equipment and ion source generating device |
| CN111741584A (en) * | 2020-05-26 | 2020-10-02 | 中国原子能科学研究院 | D+Ion source |
| CN111741584B (en) * | 2020-05-26 | 2021-12-28 | 中国原子能科学研究院 | D+Ion source |
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| Publication number | Publication date |
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| CN105590823B (en) | 2019-07-05 |
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