CN102347196A - Structure of charge neutralization system for filament-free plasma overflow gun - Google Patents
Structure of charge neutralization system for filament-free plasma overflow gun Download PDFInfo
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- CN102347196A CN102347196A CN2010102434863A CN201010243486A CN102347196A CN 102347196 A CN102347196 A CN 102347196A CN 2010102434863 A CN2010102434863 A CN 2010102434863A CN 201010243486 A CN201010243486 A CN 201010243486A CN 102347196 A CN102347196 A CN 102347196A
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Abstract
The invention discloses a structure of a charge neutralization system for a filament-free plasma overflow gun, which relates to an ion implanter and belongs to the field of semiconductor manufacturing. The structure comprises a radio frequency power supply, a gas source, a lengthened discharge arc starting chamber, an extraction electrode, an extraction power supply and an overflow gun controller, and all important components are related or connected with each other to from the structure of the charge neutralization system for the filament-free plasma overflow gun. The structure of the charge neutralization system for the filament-free plasma overflow gun is different from a traditional plasma overflow gun adopting a tungsten filament, and radio frequency energy is adopted to serve as an excitation source, thereby, the risks of tungsten metallic pollution and tungsten filament fracture which are generated by adopting the tungsten filament in an implantation process are eliminated. Low-energy electrons are selected by the structure of the charge neutralization system for the filament-free plasma overflow gun to serve as neutralization charges under the careful control of the controller, and the electrons overflow within the width range of an ion beam, so that the positive charges of the ion beam are fully neutralized, the back charge effect of the residual charges is also avoided, and the device damage rate caused by charge gathering in the implantation process is reduced severalfold.
Description
Technical field
The present invention relates to a kind of no filament plasma overflow rifle charging neutrality architecture, relate to ion implantor especially, belong to field of manufacturing semiconductor devices.
Background technology
Ion injects and mixes technology is that semiconductor device is made an indispensable step.In ion implantation process, positively charged ion is injected into the various piece of wafer semiconductor-on-insulator device.Concerning conductor part, these positive charge ions can be at device inside by the electronics neutralization from backing material.Yet when these cations strike the insulating barrier of device (as: grid oxic horizon), they will accumulate positive charge in this insulating barrier, thereby cause between this very thin oxide layer, forming high electric field.When the intensity of this electric field was higher than certain threshold value, thin grid oxic horizon will breakdownly damage, thereby caused device failure.Along with size of semiconductor device is dwindled, grid oxic horizon can thin down, so need when ion injects, eliminate the positive charge ion of these accumulations.
Most ion implantor using plasma overflow rifle or plasma overflow rifle provide negatron to come the intrafascicular cation of neutralize ions.Traditional method is that the heating tungsten filament produces hot electron earlier; Then the inert gas that bombards in the small-sized arc chamber of hot electron makes its ionization; Gas after the ionization diffuses out from the slit that designs and forms a branch of electron source, and the neutralization of the accumulation cation on electronics and the wafer is provided.Yet adopt this kind method, the tungsten filament of heating can cause tungsten contamination at wafer surface deposits tungsten element; The plasma sputtering of inert gas can make to the filament in addition needs filament breaking to stop work to change and damages parts, influences ordinary production.
Summary of the invention
The present invention promptly is a kind of no filament plasma overflow rifle charging neutrality architecture that proposes to the problem that exists in the prior art; What this structure adopted is in RF rf energy and the low energy and electronics; In " charging neutrality " the technical performance that obviously is superior to filament overflow rifle, eliminated the pollution of heavy metals tungsten again to wafer.Improve the performance of device greatly and reduced components from being damaged rate on the wafer.
The present invention realizes through following technical scheme:
A kind of no filament plasma overflow rifle charging neutrality architecture; It is characterized in that: a radio-frequency power supply; A gas source, the discharge of a lengthening plays arc chamber, an extraction electrode; Draw the architecture that power supply and overflow gun controller have been formed no filament plasma overflow rifle for one, as shown in Figure 1.
Described radio-frequency power supply plays arc chamber with the discharge of lengthening and is associated; Described gas source plays arc chamber with the discharge of lengthening and links to each other; Described extraction electrode plays arc chamber with the discharge of lengthening and is associated; The described power supply of drawing links to each other with the extraction electrode electrode, and described overflow gun controller is with radio-frequency power supply, gas source and draw power supply and be connected.When plasma overflow rifle of the present invention is worked; Described gas source plays arc chamber input inert gas to the discharge of lengthening; Described radio-frequency power supply plays the arc chamber delivery of radio frequency energy to the discharge of lengthening, and inert gas produces plasma in the indoor discharge starting the arc of the starting the arc under the exciting of RF energy; The side that the discharge of described lengthening plays arc chamber has a long slit; Described extraction electrode has been placed in the front in arc chamber slit; The said power supply of drawing provides a positive potential to extraction electrode, and under the traction of this positive potential, electronics overflows from the long slit of discharge arc chamber; Form a wide electron beam, the width of this electron beam can be designed to cover the wafer diameter; Described overflow gun controller is unified to be controlled and is managing radio-frequency power supply, gas source and drawing power supply; Under the coordination control of overflow gun controller, no filament plasma overflow rifle of the present invention can be launched the wide banded low-energy electron beam that heavy metal free pollutes on request.
The present invention has following remarkable advantage:
1. the present invention can be controlled at low energy range with the energy that overflows electronics under the control of overflow gun controller is coordinated; And covering ion beam width scope; Formed the very outstanding charging neutrality system of performance; Make the positive charge of ion beam obtain neutralization, the risk of the device failure that accumulation causes in the injection technology is reduced greatly.Owing to adopted in the low energy and electronics, eliminated electronics " reverse charge " to components from being damaged.
2. traditional plasma and plasma overflow rifle adopt the tungsten filament design, and the pollution of heating tungsten filament will be deposited on the silicon wafer, causes the reduction of device performance.The present invention adopts no filament design, makes the pollution of having eliminated heavy metals tungsten on the silicon wafer that is injected into.
3. the present invention adopts no filament design, does not have filament breaking fault that causes and the influence of stopping work to production, has effectively improved the reliability and the productivity ratio of equipment.
Description of drawings
Fig. 1 is a kind of block diagram that does not have filament plasma overflow rifle structure of the present invention.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment the present invention is done further introduction, but not as to qualification of the present invention.
The present invention just is the charging neutrality parts that raising device performance and rate of finished products are developed in ion implantor.In injection technology, ion implantor both can produce the horizontal direction ribbon ion beam, also can produce level to the spot scan bundle, the ion beam level with bandwidth is to the width that has covered silicon wafer; The silicon wafer that is injected into is then vertically done uniform scanning motion towards penetrating the uniform ion band that comes.Carrying out suitable charging neutrality just requires along continuous straight runs at the interior introducing electron stream of whole silicon wafer diameter distance.
With reference to Fig. 1, no filament overflow rifle structure comprises that the discharge of 2, one lengthenings of 1, one gas source of a radio-frequency power supply plays 4, one of 3, one extraction electrodes of arc chamber and draws power supply 5 and an overflow gun controller 6.
Described radio-frequency power supply 1 plays arc chamber 3 with the discharge of lengthening and is associated; Described gas source 2 plays arc chamber 3 through the air duct and the discharge of lengthening and is connected; The downside that plays arc chamber 3 in the discharge of described lengthening has a long and narrow slit, and described extraction electrode 4 has been placed in the front in arc chamber slit, and the described power supply 5 of drawing links to each other with extraction electrode 4; To extraction electrode one positive potential is provided, described overflow gun controller 6 is with radio-frequency power supply 1, gas source 2 and draw power supply 5 and be connected.When carrying out injection technology, synchronous working of the present invention.Described gas source 2 plays arc chamber 3 input inert gases to the discharge of lengthening, and described radio-frequency power supply 1 plays arc chamber 3 delivery of radio frequency energy to the discharge of lengthening, and inert gas produces plasma in the indoor discharge starting the arc of the starting the arc under the exciting of RF energy; Under the traction of the positive potential on the described extraction electrode 4; Electronics overflows formation one wide electron beam from the long and narrow slit of discharge arc chamber; It is intrafascicular vertically to inject ribbon ion, and the width of this electron beam is designed to equate with the ion beam bandwidth, covers whole wafer diameter; Described overflow gun controller 6 unifications are controlled and are being managed radio-frequency power supply 1, gas source 2 and drawing power supply 5; Under the coordination control of overflow gun controller; No filament plasma overflow rifle of the present invention is launched a broadband shape low-energy electron beam of heavy metal free pollution on request and the accumulation positive charge of the injection of the ion on the wafer neutralizes; Both reached and eliminated the electric field action that the accumulation positive charge produces, avoided components from being damaged again.
Embodiment: following with the improvement situation of one group of experimental data explanation the present invention to device yield and wafer metallic pollution
Table 1: device yield is (injection condition: 20keV, 10mA, 5E15/cm relatively
2)
Table 2: wafer tungsten metallic pollution is (injection condition: 40keV, 1E16/cm relatively
2)
| The situation of overflow rifle | Do not put into implanter | Tungsten filament overflow rifle | No filament overflow rifle is opened | No filament overflow rifle closes |
| Tungsten density on the wafer | 5E+8(atoms/cm 2) | 1E+10(atoms/cm 2) | 1E+9(atoms/cm 2) | 1E+9(atoms/cm 2) |
The grid oxic horizon of table 1 test component is 40 dusts, is designed with the device of several kinds of characteristic ratios, under the injection condition of setting after the ion implantor with dissimilar overflow rifles injects, the rate of finished products of test component.Can know that from table 1 when the characteristic ratio of device exceeded a certain value, the performance of no filament overflow rifle exceeded tungsten filament overflow rifle far away.
Be the test data of tungsten contamination on the wafer in the table 2, the no filament overflow rifle charging neutrality architecture of data demonstration is not brought the tungsten metallic pollution in the table 2.
Embodiment of the present invention and specific embodiment data elaborate content of the present invention.As far as persons skilled in the art, any conspicuous change of under the prerequisite that does not deviate from spirit of the present invention, it being done all constitutes the infringement to patent of the present invention, with corresponding legal responsibilities.
Claims (4)
1. no filament plasma overflow rifle charging neutrality architecture; It is characterized in that: a radio-frequency power supply; A gas source; The discharge of a lengthening plays arc chamber, and an extraction electrode is drawn the architecture that power supply and overflow gun controller have been formed no filament plasma overflow rifle for one.
2. a kind of no filament plasma overflow rifle charging neutrality architecture as claimed in claim 1 is characterized in that: described radio-frequency power supply is the driving source of this structure, employing be no filament project organization.
3. a kind of no filament plasma overflow rifle charging neutrality architecture as claimed in claim 1, it is characterized in that: the discharge of described lengthening plays its characteristics of arc chamber and is " lengthening ", and its downside has a length can cover the long and narrow slit of wafer diameter.
4. a kind of no filament plasma overflow rifle charging neutrality architecture as claimed in claim 1; It is characterized in that: described overflow gun controller can and be drawn power supply to radio-frequency power supply, gas source and control effectively, make overflow in electric charge be low-energy electron.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010102434863A CN102347196A (en) | 2010-08-02 | 2010-08-02 | Structure of charge neutralization system for filament-free plasma overflow gun |
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| CN2010102434863A CN102347196A (en) | 2010-08-02 | 2010-08-02 | Structure of charge neutralization system for filament-free plasma overflow gun |
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| CN102347196A true CN102347196A (en) | 2012-02-08 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106941066A (en) * | 2017-03-22 | 2017-07-11 | 中山市博顿光电科技有限公司 | A kind of radio-frequency ion source averager for ionizing effect stability |
| CN108885964A (en) * | 2016-04-05 | 2018-11-23 | 发仁首路先株式会社 | The plasma processing tool of adjustable charge amount |
| CN110416072A (en) * | 2019-07-30 | 2019-11-05 | 上海华力集成电路制造有限公司 | Improve the method for the online particle of silicon wafer in ion implantation technology |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030183780A1 (en) * | 2002-03-27 | 2003-10-02 | Sumitomo Eaton Nova Corporation | Ion beam charge neutralizer and method therefor |
| US20060042752A1 (en) * | 2004-08-30 | 2006-03-02 | Rueger Neal R | Plasma processing apparatuses and methods |
| WO2007075344A2 (en) * | 2005-12-19 | 2007-07-05 | Varian Semiconductor Equipment Associates, Inc. | Technique for providing an inductively coupled radio frequency plasma flood gun |
-
2010
- 2010-08-02 CN CN2010102434863A patent/CN102347196A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030183780A1 (en) * | 2002-03-27 | 2003-10-02 | Sumitomo Eaton Nova Corporation | Ion beam charge neutralizer and method therefor |
| US20060042752A1 (en) * | 2004-08-30 | 2006-03-02 | Rueger Neal R | Plasma processing apparatuses and methods |
| WO2007075344A2 (en) * | 2005-12-19 | 2007-07-05 | Varian Semiconductor Equipment Associates, Inc. | Technique for providing an inductively coupled radio frequency plasma flood gun |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108885964A (en) * | 2016-04-05 | 2018-11-23 | 发仁首路先株式会社 | The plasma processing tool of adjustable charge amount |
| CN108885964B (en) * | 2016-04-05 | 2020-11-06 | 发仁首路先株式会社 | Plasma processing equipment capable of adjusting electric charge quantity |
| CN106941066A (en) * | 2017-03-22 | 2017-07-11 | 中山市博顿光电科技有限公司 | A kind of radio-frequency ion source averager for ionizing effect stability |
| CN106941066B (en) * | 2017-03-22 | 2018-07-06 | 中山市博顿光电科技有限公司 | The radio-frequency ion source averager that a kind of ionization effect is stablized |
| CN110416072A (en) * | 2019-07-30 | 2019-11-05 | 上海华力集成电路制造有限公司 | Improve the method for the online particle of silicon wafer in ion implantation technology |
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Application publication date: 20120208 |