CN105589091B - A kind of regions cadmium-zinc-teiluride CZT gamma detector - Google Patents
A kind of regions cadmium-zinc-teiluride CZT gamma detector Download PDFInfo
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- CN105589091B CN105589091B CN201510980202.1A CN201510980202A CN105589091B CN 105589091 B CN105589091 B CN 105589091B CN 201510980202 A CN201510980202 A CN 201510980202A CN 105589091 B CN105589091 B CN 105589091B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/208—Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
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Abstract
The present invention relates to a kind of regions cadmium-zinc-teiluride CZT gamma detector, including cadmium-zinc-teiluride CZT crystal detections, charge sensitive amplifier circuit, SK master put shape amplifying circuit, single-channel pulse height analysis circuit, high-pressure modular circuit；The cadmium-zinc-teiluride CZT crystal detections are connected electrically on charge sensitive amplifier circuit, high-pressure modular circuit is electrically connected with charge sensitive amplifier circuit, the input terminal that the output end of the charge sensitive amplifier circuit puts shape amplifying circuit with SK master is connect, the output end that the SK master puts shape amplifying circuit is electrically connected with the input terminal of single-channel pulse height analysis circuit, the output end output signal pulses of the single-channel pulse height analysis circuit；Detection efficient height, energy working and room temperature and search angle responsiveness are good, can realize the regions the cadmium-zinc-teiluride CZT gamma detector measured gamma-rays high sensitivity and directionless difference.
Description
Technical field
The present invention relates to nuclear radiation monitoring FIELD OF THE INVENTIONThe, is specifically related to a kind of regions cadmium-zinc-teiluride CZT gamma detector.
Background technology
Region γ monitors the real-time monitoring that system is mainly used in the gamma-rays dosage rate of key area at present, in system
All types of detectors realize the conversion of physics ray and voltage and current signal, but currently used region γ monitorings system is simultaneously
It can not realize to the high-resolution spectral measurement of gamma-rays, while cadmium-zinc-teiluride（CZT）Detector is third generation semiconductor probe
Device, opposite other types detector, it has the characteristics that high detection efficient, energy working and room temperature, angular response degree are good, but not
Cadmium-zinc-teiluride CZT detector is applied in the γ monitoring systems of region, the maximum efficiency of cadmium-zinc-teiluride CZT detector is played.
Invention content
In order to overcome the disadvantages of the above prior art, high, energy room temperature that the purpose of the present invention is to provide a kind of detection efficients
Work can realize the regions the cadmium-zinc-teiluride CZT gamma detector measured gamma-rays high sensitivity and directionless difference.
In order to achieve the above object, the technical solution that the present invention takes is：A kind of regions cadmium-zinc-teiluride CZT gamma detector, packet
Include cadmium-zinc-teiluride CZT crystal detections, charge sensitive amplifier circuit, SK master put shape amplifying circuit, single-channel pulse height analysis circuit, height
Die block circuit；The cadmium-zinc-teiluride CZT crystal detections are connected electrically on charge sensitive amplifier circuit, high-pressure modular circuit and electricity
Lotus sensitive amplifier circuit is electrically connected, and output end and the SK master of the charge sensitive amplifier circuit put the input terminal of shape amplifying circuit
Connection, the output end that the SK master puts shape amplifying circuit is electrically connected with the input terminal of single-channel pulse height analysis circuit, described
Single-channel pulse height analysis circuit output end output signal pulses.
The cadmium-zinc-teiluride CZT crystal detections and are being pressurizeed by the cadmium-zinc-teiluride CZT materials of 10 x, 10 x 10mm
When+800V, sensitivity is 100 ~ 300cps/ μ Sv/h.
The charge sensitive amplifier circuit forms capacitance using FET amplifier chip opa2211 and JFET field-effect tube
Feedback type amplifying circuit, late-class circuit are 2.5 times of amplifying circuits of positive input, and driving processing is amplified to signal.
The SK master put shape amplifying circuit by the exponential damping type signal of charge sensitive amplifier circuit output amplification 100 ~
200 times, and exponential damping type signal is converted into symmetrical Gaussian pulse signal.
The Gaussian pulse signal that SK master is put the output of shape amplifying circuit by the single-channel pulse height analysis circuit carries out width
Degree is screened and shaping, when input signal amplitude is more than 50 ~ 70mV of low threshold voltage, is less than 2.5 ~ 3.5V of high threshold voltage, visits
Survey the positive pulse signal that device final output pulsewidth is 2us；When input signal amplitude is more than 2.5 ~ 3.5V of high threshold voltage or small
When 50 ~ 70mV of low threshold voltage, signal output all useless.
The CC255P-01Y type high-pressure modulars that the high-pressure modular circuit uses stablize output+800V high direct voltages.
The input terminal that the SK master puts shape amplifying circuit uses pole-zero cancellation circuit, and differential is carried out to Damped exponential signals
Processing, SK master put the low-pass filter circuit of totally 4 ranks of the two-stage in shape amplifying circuit, and integral filtering is carried out to the signal after differential,
And signal is amplified.
The present invention uses above technical scheme, has the following advantages, cadmium-zinc-teiluride CZT crystal detections will detect in the present invention
Signal send charge sensitive amplifier circuit to, the signal received is amplified driving and handled by charge sensitive amplifier circuit,
Signal after charge sensitive amplifier processing of circuit is exponential damping type signal, and the exponential damping type signal is sent to SK
Master is put shape amplifying circuit and is amplified, and SK master puts the signal after shape amplifying circuit well is dealt into and sends single-channel pulse height analysis electricity to
Road carries out amplitude discriminator and shaping, relatively and is exported, which can realize
To the regions the cadmium-zinc-teiluride CZT gamma detector of the high-resolution spectral measurement of gamma-rays.
Description of the drawings
Fig. 1 is the structural diagram of the present invention；
Fig. 2 is the charge sensitive amplifier circuit in the present invention；
Fig. 3 is that the SK master in the present invention puts shape amplifying circuit；
Fig. 4 is the single-channel pulse height analysis circuit in the present invention；
Fig. 5 is the high-pressure modular circuit in the present invention.
Specific implementation mode
The present invention is described in detail below with reference to the accompanying drawings and embodiments.
Embodiment 1
As shown in Figure 1, there is shown, the regions a kind of cadmium-zinc-teiluride CZT gamma detector, including cadmium-zinc-teiluride CZT crystal detections, charge-sensitive are put
Big circuit, SK master put shape amplifying circuit, single-channel pulse height analysis circuit, high-pressure modular circuit；The cadmium-zinc-teiluride CZT detections
Crystal is connected electrically on charge sensitive amplifier circuit as shown in Figure 2, and high-pressure modular circuit is electrically connected with charge sensitive amplifier circuit
It connects, the input terminal that the output end of the charge sensitive amplifier circuit puts shape amplifying circuit with SK master is connect, and the SK master is put
The output end of shape amplifying circuit is electrically connected with the input terminal of single-channel pulse height analysis circuit, the single-channel pulse height analysis
The output end output signal pulses of circuit.
In the process of work, the signal detected is sent to charge spirit as shown in Figure 2 by cadmium-zinc-teiluride CZT crystal detections
Quick amplifying circuit, lotus sensitive amplifier circuit is amplified driving processing to the signal received, and drives treated to believe amplification
Number being sent to SK master as shown in Figure 3 puts shape amplifying circuit, and SK master puts shape amplifying circuit and is amplified the signal received simultaneously
Differential process is carried out, SK master puts shape amplifying circuit, and signal is sent to single-channel pulse height analysis as described in Figure 4 by treated
Circuit, single-channel pulse height analysis circuit carry out the signal received to carry out amplitude discriminator and shaping, relatively and be exported,
Monitoring system detection efficient height, the energy working and room temperature, can realize the cadmium-zinc-teiluride CZT to the high-resolution spectral measurement of gamma-rays
Region gamma detector.
Embodiment 2
On the basis of embodiment 1, the cadmium-zinc-teiluride CZT crystal detections described in one are by the cadmium-zinc-teiluride of 10 x, 10 x 10mm
CZT materials, and in pressurization+800V, sensitivity is 100 ~ 300cps/ μ Sv/h；Cadmium-zinc-teiluride CZT crystal is surveyed in power spectrum
It is right when examination241Am radial energies are less than 10% energy resolution；
The charge sensitive amplifier circuit forms capacitance using FET amplifier chip opa2211 and JFET field-effect tube
Feedback type amplifying circuit, late-class circuit are 2.5 times of amplifying circuits of positive input, and driving processing is amplified to signal.The charge
Sensitive amplifier circuit amplitude output signal and ray energy are linear.Its sensitivity can reach 150mV/MeV, Electronics noice
Less than 160 electronics；
The SK master put shape amplifying circuit by the exponential damping type signal of charge sensitive amplifier circuit output amplification 100 ~
200 times, and exponential damping type signal is converted into symmetrical Gaussian pulse signal.
The Gaussian pulse signal that SK master is put the output of shape amplifying circuit by the single-channel pulse height analysis circuit carries out width
Degree is screened and shaping, when input signal amplitude is more than 50 ~ 70mV of low threshold voltage, is less than 2.5 ~ 3.5V of high threshold voltage, visits
Survey the positive pulse signal that device final output pulsewidth is 2us；When input signal amplitude is more than 2.5 ~ 3.5V of high threshold voltage or small
When 50 ~ 70mV of low threshold voltage, signal output all useless.The purpose of the voltage will be less than in circuit using comparator circuit
The voltage noise of 50mV and radiation gamma-rays higher than 3MeV are rejected in the signal..
The high-pressure modular circuit as shown in Figure 5 is using Beijing Hamamatsu Technology Co., Ltd.
CC255P-01Y type high-pressure modulars stablize output+800V high direct voltages.
The input terminal that the SK master as shown in Figure 3 puts shape amplifying circuit uses pole-zero cancellation circuit, to exponential damping
Signal carries out differential process, and SK master puts the low-pass filter circuit of totally 4 ranks of the two-stage in shape amplifying circuit, to the signal after differential into
Row integral filtering, and signal is amplified.
Probe body is handled using aluminium material oxidation, ensures good barrier propterty and effectiveness.Power interface
Using the aviation plug of 7 cores.
Advantage of the present invention：Package size is small, cylindrical, radius 65mm, long 150mm；It is efficient to gamma-ray detection, greatly
In 100cps/ μ Sv/h；Detector internal high-voltage, user are easy to use；
In the process of work, cadmium-zinc-teiluride CZT crystal detections send collected signal to charge sensitive amplifier circuit,
The signal received is amplified driving processing, the letter after charge sensitive amplifier processing of circuit by charge sensitive amplifier circuit
Number it is exponential damping type signal, and the exponential damping type signal is sent to SK master and puts shape amplifying circuit, SK master puts shape amplification electricity
The exponential damping type signal of the charge sensitive amplifier circuit output received is amplified 100 ~ 200 times by road, and by exponential damping type
Signal is converted to symmetrical Gaussian pulse signal, and during amplification, the input terminal that SK master puts shape amplifying circuit uses pole zero
Cancellation circuit, to Damped exponential signals carry out differential process, SK master put the two-stage in shape amplifying circuit totally 4 ranks low-pass filtering electricity
Road carries out integral filtering to the signal after differential, and is amplified to signal, and SK master puts shape amplifying circuit will treated Gauss
Signal send to single-channel pulse height analysis circuit by SK master put shape amplifying circuit output Gaussian pulse signal into line amplitude discriminate
Not not simultaneously shaping, when input signal amplitude is more than low threshold voltage, is less than high threshold voltage, detector final output pulsewidth is
The positive pulse signal of 2us；When input signal amplitude is more than high threshold voltage or is less than low threshold voltage, signal all useless is defeated
Go out, high-pressure modular circuit predominantly provides power supply, ensures the normal operation of each circuit, makes each circuit using 800V high direct voltages
More stablize.
The foregoing examples are only illustrative of the present invention, does not constitute the limitation to protection scope of the present invention, all
Be with the present invention it is same or analogous design all belong to the scope of protection of the present invention within.
Claims (4)
1. a kind of regions cadmium-zinc-teiluride CZT gamma detector, which is characterized in that including cadmium-zinc-teiluride CZT crystal detections, charge sensitive amplifier
Circuit, SK master put shape amplifying circuit, single-channel pulse height analysis circuit, high-pressure modular circuit；The cadmium-zinc-teiluride CZT detections are brilliant
Body is connected electrically on charge sensitive amplifier circuit, and high-pressure modular circuit is electrically connected with charge sensitive amplifier circuit, the charge
The input terminal that the output end of sensitive amplifier circuit puts shape amplifying circuit with SK master is connect, and the SK master puts the defeated of shape amplifying circuit
Outlet is electrically connected with the input terminal of single-channel pulse height analysis circuit, and the output end of the single-channel pulse height analysis circuit is defeated
Go out signal pulse；
The cadmium-zinc-teiluride CZT crystal detections be by the cadmium-zinc-teiluride CZT materials of 10 x, 10 x 10mm, and pressurization+
When 800V, sensitivity is 100 ~ 300cps/ μ Sv/h；
The charge sensitive amplifier circuit forms capacitive feedback using FET amplifier chip opa2211 and JFET field-effect tube
Type amplifying circuit, late-class circuit are 2.5 times of amplifying circuits of positive input, and driving processing is amplified to signal；The single track
The Gaussian pulse signal that SK master is put the output of shape amplifying circuit by pulse amplitude analysis circuit carries out amplitude discriminator and shaping, works as input
Signal amplitude is more than 50 ~ 70mV of low threshold voltage, and when being less than 2.5 ~ 3.5V of high threshold voltage, detector final output pulsewidth is
The positive pulse signal of 2us；When input signal amplitude is more than 2.5 ~ 3.5V of high threshold voltage or is less than 50 ~ 70mV of low threshold voltage
When, signal output all useless；
The purpose of the voltage is the radiation γ by the voltage noise of 50mV is less than in circuit and higher than 3MeV using comparator circuit
Ray is rejected in the signal.
2. a kind of regions cadmium-zinc-teiluride CZT according to claim 1 gamma detector, which is characterized in that the SK master puts shape
The exponential damping type signal of charge sensitive amplifier circuit output is amplified 100 ~ 200 times by amplifying circuit, and exponential damping type is believed
Number be converted to symmetrical Gaussian pulse signal.
3. a kind of regions cadmium-zinc-teiluride CZT according to claim 1 gamma detector, which is characterized in that the high-pressure modular
The CC255P-01Y type high-pressure modulars that circuit uses stablize output+800V high direct voltages.
4. a kind of regions cadmium-zinc-teiluride CZT according to claim 1 gamma detector, which is characterized in that the SK master puts shape
The input terminal of amplifying circuit uses pole-zero cancellation circuit, carries out differential process to Damped exponential signals, SK master puts shape amplifying circuit
In two-stage totally 4 ranks low-pass filter circuit, integral filtering is carried out to the signal after differential, and be amplified to signal.
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| CN201510980202.1A CN105589091B (en) | 2015-12-24 | 2015-12-24 | A kind of regions cadmium-zinc-teiluride CZT gamma detector |
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| CN105589091B true CN105589091B (en) | 2018-07-31 |
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| CN111366966A (en) * | 2018-12-25 | 2020-07-03 | 中核核电运行管理有限公司 | Special equipment for teaching radiation monitoring instrument |
| CN109917443A (en) * | 2019-03-12 | 2019-06-21 | 中国辐射防护研究院 | High energy gamma radiation detection device |
| CN110609050B (en) * | 2019-09-25 | 2021-05-25 | 成都理工大学 | Method and system for eliminating X-ray fluorescence spectrum peak tailing |
| CN110854242B (en) * | 2019-12-18 | 2024-03-19 | 中国原子能科学研究院 | Radiation detection probe, preparation method thereof and radiation detection chip |
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| US4550381A (en) * | 1981-11-03 | 1985-10-29 | The United States Of America As Represented By The United States Department Of Energy | Spectrometer gun |
| CN104635254A (en) * | 2015-01-30 | 2015-05-20 | 陕西迪泰克新材料有限公司 | Portable gamma spectroradiometer |
| CN104678423A (en) * | 2015-03-10 | 2015-06-03 | 四川中测辐射科技有限公司 | Double-channel counting system and measurement method of dose equivalent in high dose condition |
| CN204556843U (en) * | 2015-04-29 | 2015-08-12 | 陕西迪泰克新材料有限公司 | Detection system |
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Patent Citations (4)
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|---|---|---|---|---|
| US4550381A (en) * | 1981-11-03 | 1985-10-29 | The United States Of America As Represented By The United States Department Of Energy | Spectrometer gun |
| CN104635254A (en) * | 2015-01-30 | 2015-05-20 | 陕西迪泰克新材料有限公司 | Portable gamma spectroradiometer |
| CN104678423A (en) * | 2015-03-10 | 2015-06-03 | 四川中测辐射科技有限公司 | Double-channel counting system and measurement method of dose equivalent in high dose condition |
| CN204556843U (en) * | 2015-04-29 | 2015-08-12 | 陕西迪泰克新材料有限公司 | Detection system |
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Denomination of invention: Cadmium zinc telluride (CZT) area gamma detector Effective date of registration: 20190426 Granted publication date: 20180731 Pledgee: Shaanxi Weicheng Xianyang rural commercial bank Limited by Share Ltd Pledgor: IMDETEK CORPORATION LTD. Registration number: 2019610000079 |
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Date of cancellation: 20210517 Granted publication date: 20180731 Pledgee: Shaanxi Weicheng Xianyang rural commercial bank Limited by Share Ltd. Pledgor: IMDETEK Corp.,Ltd. Registration number: 2019610000079 |