CN104678423A - Double-channel counting system and measurement method of dose equivalent in high dose condition - Google Patents

Double-channel counting system and measurement method of dose equivalent in high dose condition Download PDF

Info

Publication number
CN104678423A
CN104678423A CN201510104261.2A CN201510104261A CN104678423A CN 104678423 A CN104678423 A CN 104678423A CN 201510104261 A CN201510104261 A CN 201510104261A CN 104678423 A CN104678423 A CN 104678423A
Authority
CN
China
Prior art keywords
radiation field
straight
binary channels
condition
line equation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201510104261.2A
Other languages
Chinese (zh)
Other versions
CN104678423B (en
Inventor
黄平
刘操
龚岚
杨乾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiation Institute of NIMTT
Original Assignee
SICHUAN ZHONGCE TECHNOLOGY DEVELOPMENT CO LTD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SICHUAN ZHONGCE TECHNOLOGY DEVELOPMENT CO LTD filed Critical SICHUAN ZHONGCE TECHNOLOGY DEVELOPMENT CO LTD
Priority to CN201510104261.2A priority Critical patent/CN104678423B/en
Publication of CN104678423A publication Critical patent/CN104678423A/en
Application granted granted Critical
Publication of CN104678423B publication Critical patent/CN104678423B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Measurement Of Radiation (AREA)

Abstract

The invention relates to the technical field of ionization radiation testing, and provides a double-channel counting system and a measurement method of a dose equivalent in a high dose condition, so as to solve the problem of the measurement of the dose equivalent in the high dose condition. The measurement method mainly comprises the following steps: initializing the double-channel counting system; respectively performing measurement on an intermediate energy radiation field and a high energy radiation field; performing linear fitting on measured values obtained in various conditions, so as to obtain an interpolation equation. Through the adoption of the technical scheme, the correction of both the counting lineation and energy response of a semiconductor detector is realized within a certain radiation field average effective energy range.

Description

The measuring method of dose equivalent under binary channels number system, high dose condition
Technical field
The present invention relates to ionising radiation technical field of measurement and test, particularly the measuring method of dose equivalent under a kind of binary channels number system, high dose condition.
Background technology
Semiconductor personal dosimeter, owing to having the features such as low-power consumption, small size, high sensitivity, measurement in real time, is widely used in the radiation places such as nuclear power station, radiologic medicine, lossless detection, reactor.Along with the increase day by day of energy demand, the development of nuclear power will exacerbate the demand of personal dosimeter further.But, by restrictions such as instrument power consumption, volume, detector front end technology, adopt the detector electronic system of low-power consumption, apportion components and parts composition, it exports core pulse signal and has one fixed width, when when high dose radiation field, there will be pulse pile-up phenomenon, cause counting poor linearity.
In order to solve the problem, the method mainly taked at present has two kinds, the first is under single energy condition, counting linear revise is completed by dead-time control technology, but its dead-time control coefficient is different under different-energy, in actual measurement, radiation field ray energy feature is unclear often, therefore can not realize at the dosage measurement of average effective energy within the scope of 48keV ~ 1.25MeV under high dose condition.In addition, semi-conductor chip integrated technology can be adopted to replace the front-end detector electronic system of apportion components and parts composition, under the prerequisite of not losing sensitivity, the nonlinear problem of counting is solved by improving output of pulse signal width, but this method is subject to the restriction of semi-conductor chip integrated technology, and cost is higher.
The present invention is national great scientific instruments equipment exploitation special fund Funded Projects (project name: Novel electric is from radiation detection instrument and critical component exploitation and apply, bullets: 2013YQ090811).
Summary of the invention
[technical matters that will solve]
The object of this invention is to provide the measuring method of dose equivalent under a kind of binary channels number system, high dose condition, measure problem to solve the dose equivalent of radiation field average effective energy within the scope of 48keV ~ 1.25MeV under high dose condition.
[technical scheme]
The present invention is achieved by the following technical solutions.
First the present invention relates to a kind of binary channels number system, it comprises semiconductor detector, Charge sensitive amplifier circuit, the first pulse former, the first comparer, the second pulse former, the second comparer, MCU, described first pulse former and the second pulse former are configured to the pulse signal exporting different amplitude and width respectively, described MCU comprises the first counter for counting the output pulse of the first comparer, the second counter for counting the output pulse of the second comparer
The input end of described Charge sensitive amplifier circuit is connected with semiconductor detector, and its output terminal is connected with the input end of the first pulse former and the input end of the second pulse former respectively; The input end of described first comparer is connected with the output terminal of the first pulse former and first threshold voltage signal source respectively, the input end of described second comparer is connected with the output terminal of the second pulse former and Second Threshold voltage signal source respectively, the magnitude of voltage of described first threshold signal source and the magnitude of voltage of Second Threshold signal source unequal; Described MCU is connected with the output terminal of the first comparer and the output terminal of the second comparer respectively.
As one preferred embodiment, described Charge sensitive amplifier circuit comprises JFET, first resistance, second resistance, first electric capacity and the first operational amplifier, the grid of described JFET as Charge sensitive amplifier circuit input end respectively with the anode of semiconductor detector, one end of second resistance, one end of first electric capacity connects, the source ground of described JFET, the drain electrode of described JFET respectively with one end of the first resistance, the input end of the first operational amplifier connects, the negative electrode of described semiconductor detector, the other end of the first resistance is all connected with the first voltage source, the output terminal of described first operational amplifier as Charge sensitive amplifier circuit output terminal respectively with the other end of the second resistance, the other end of the first electric capacity connects.
As another preferred embodiment, the magnitude of voltage of described first threshold voltage signal source and the magnitude of voltage ratio of Second Threshold voltage signal source are less than or equal to 0.8.
As another preferred embodiment, described semiconductor detector is Si-Pin detector.
The invention still further relates to the measuring method of dose equivalent under a kind of high dose condition, the method comprises:
Steps A: arbitrary described binary channels number system in initialization Claims 1-4;
Step B: selective radiation field, described radiation field is middle energy radiation field or high-energy radiation field;
Step C: determine measuring condition, if the radiation field selected is middle energy radiation field, then described measuring condition is the tube current of radiation source, if the radiation field selected is high-energy radiation field, then described measuring condition is dose equivalent measuring position;
Step D: under determined measuring condition, adopts the radiation dose of described binary channels number system to radiation source to count, and to the first counter N 1with the second counter N 2be weighted process and obtain binary channels count value M 1, the formula of described weighting process is:
M 1 = 1 2 · ( N 1 + N 2 ) · A · B ,
In above formula, the value of A is or b is chronomere's conversion factor;
Step e: under determined measuring condition, uses the measurement of standard metering instrument to obtain the measured value D of standard metering instrument 2, to the measured value D of standard metering instrument 2carry out conversion process and obtain standard metering instrument scaled value M 2, the described formula converting process is:
M 2=D 2·L·H,
In above formula L be 137sensitivity factor under Cs radiation field, H is dosage unit conversion factor;
Step F: calculate standard metering instrument scaled value M 2with binary channels count value M 1between ratio K r;
Step G: redefine measuring condition, repeats step D to step F, obtains the binary channels count value M under different measuring condition 1, standard metering instrument measured value D 2, ratio K r, by the binary channels count value M under each measuring condition 1, ratio K rinverse, standard metering instrument measured value D 2, ratio K rbe saved to primary vector, secondary vector, the 3rd vector sum the 4th vector respectively;
Step H: carry out linear fit to the data of primary vector and the data of secondary vector and obtain the first straight-line equation, carries out linear fit to the data of the 3rd vector and the data of the 4th vector and obtains the second straight-line equation;
Step I: repeat step B to step H until complete the measurement of middle energy radiation field and high-energy radiation field, particularly, if the radiation field that step B selects is middle energy radiation field, the tube voltage of energy radiation field radiation source in then adjusting, repeat step C to step H, obtaining can first straight-line equation of radiation field under each tube voltage condition and the second straight-line equation, if the radiation field that step B selects is high-energy radiation field, then performs step C to step H and obtain high-energy radiation the first straight-line equation after the match and the second straight-line equation;
Step J: the first all straight-line equations is combined into the first straight-line equation set, the second all straight-line equations is combined into the second straight-line equation set, in the first straight-line equation set, as interpolation processing, the first interpolation equation is obtained to the maximum straight-line equation of slope and the minimum straight-line equation of slope, in the second straight-line equation set, as interpolation processing, the second interpolation equation is obtained to the maximum straight-line equation of slope and the minimum straight-line equation of slope;
Step K: adopt the first interpolation equation and the second interpolation equation to binary channels count value M 1revise.
As one preferred embodiment, described step K specifically comprises:
Step K 1: by binary channels count value M 1substitute into the first interpolation equation to solve and obtain ratio K rinverse;
Step K 2: the ratio K that step K 1 is tried to achieve rsubstitute into the second interpolation equation to solve and obtain revised dose equivalent value.
As another preferred embodiment, described middle energy radiation field be X-radiation field.
As another preferred embodiment, the tube voltage value of described X-radiation field is 100kV, 150kV, 200kV, 250kV or 300kV.
As another preferred embodiment, described high-energy radiation field is 60co radiation field.
As another preferred embodiment, in described step B, the scope of the average effective energy of radiation field is 48keV ~ 1.25MeV, and dose equivalent value adjustable range is 50mSv/h ~ 1Sv/h.
[beneficial effect]
The technical scheme that the present invention proposes has following beneficial effect:
(1) the present invention adopts super low-power consumption apportion components and parts, and S set i-PIN detector, has low in hardware cost, realizes structure simple, is convenient to the advantages such as batch production, tallies with the national condition, can partly replace external pertinent instruments, improve economic benefit;
(2) the present invention adopts different pulse shaping parameter and threshold value to arrange, and forms the number system of two channel counts non_uniform responses.Analyzed by lot of experimental data, adopt experimental formula, the account forms such as interpolation arithmetic, under finding out different-energy high dose condition, Accurate measurement under adopting same system of equations can complete high dose condition, therefore the inventive method has conveniently feature in actual applications;
(3) because single channel method of counting of the prior art at known rays energy, and need pass through the counting of dead-time control system, the dosage modifying factor be finally multiplied by under known rays energy condition completes the surveying work of dosage.And in actual measurement, radiation field average effective energy is that the ray energy feature of 48keV ~ 1.25Mev cannot be learnt by single channel method of counting, instant invention overcomes the deficiency that single channel method of counting exists in high dose is measured, realize the Measurement accuracy of high dose, take into account semiconductor detector counting and linearly and while energy response revise.
Accompanying drawing explanation
The structured flowchart of the binary channels number system that Fig. 1 provides for embodiments of the invention one;
The circuit theory diagrams of the binary channels number system that Fig. 2 provides for embodiments of the invention one.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, clear, complete description is carried out to the specific embodiment of the present invention, obviously, described embodiment is a part of embodiment of the present invention, instead of whole embodiment, neither limitation of the present invention.Based on embodiments of the invention, those of ordinary skill in the art, not paying the every other embodiment obtained under creative work prerequisite, belong to protection scope of the present invention.
The structured flowchart of the binary channels number system of dose equivalent under the high dose condition that Fig. 1 provides for the embodiment of the present invention one, the circuit theory diagrams of the binary channels number system of dose equivalent under the high dose condition that Fig. 2 provides for the embodiment of the present invention two.As depicted in figs. 1 and 2, this system comprises semiconductor detector D1, Charge sensitive amplifier circuit, the first pulse former, the first comparer U4, the second pulse former, second comparer U5, MCUU6, wherein the first pulse former and the second pulse former are configured to the pulse signal exporting different amplitude and width respectively, and MCUU6 comprises the first counter for counting the output pulse of the first comparer, the second counter for counting the output pulse of the second comparer.
In embodiment one, the input end of Charge sensitive amplifier circuit is connected with semiconductor detector D1, and its output terminal is connected with the input end of the first pulse former and the input end of the second pulse former respectively; The input end a of the first comparer U4 is connected with the output terminal of the first pulse former, the input end b of the first comparer U4 is connected with first threshold voltage signal source, the input end c of the second comparer U5 is connected with the output terminal of the second pulse former, the input end d of the second comparer U5 is connected with Second Threshold voltage signal source, the magnitude of voltage of first threshold signal source and the magnitude of voltage of Second Threshold signal source unequal, particularly, the magnitude of voltage of first threshold voltage signal source and the magnitude of voltage ratio of Second Threshold voltage signal source equal 0.75; MCU is connected with the output terminal of the first comparer U4 and the output terminal of the second comparer U5 respectively.
In embodiment one, Charge sensitive amplifier circuit comprises JFETQ1, resistance R1, resistance R10, electric capacity C1 and operational amplifier U1, the grid of JFETQ1 as Charge sensitive amplifier circuit input end respectively with the anode of semiconductor detector D1, one end of resistance R1, one end of electric capacity C1 connects, the source ground GND of JFETQ1, the drain electrode of JFETQ1 respectively with one end of resistance R10, the input end of operational amplifier U1 connects, the negative electrode of semiconductor detector D1, the other end of resistance R10 is all connected with voltage source V CC, the output terminal of operational amplifier U1 as Charge sensitive amplifier circuit output terminal respectively with the other end of resistance R1, the other end of electric capacity C1 connects.
In embodiment one, the first pulse former comprises resistance R2, resistance R3, resistance R4, resistance R5, electric capacity C2, electric capacity C3, operational amplifier U2.One end of resistance R2 is as the input end of the first pulse former, and its other end is connected with one end of electric capacity C2, one end of resistance R3 respectively; The other end of resistance R3 is connected with one end of electric capacity C3, the in-phase input end of operational amplifier U2 respectively; The other end ground connection GND of electric capacity C3; The inverting input of operational amplifier U2 is connected with one end of resistance R4, one end of resistance R5 respectively; The other end ground connection GND of resistance R4; The output terminal of operational amplifier U2 is as the output terminal of the first pulse former, and it is connected with the other end of resistance R5, the other end of electric capacity C2 respectively.
In embodiment one, the second pulse former comprises resistance R6, resistance R7, resistance R8, resistance R9, electric capacity C4, electric capacity C5, operational amplifier U3.One end of resistance R6 is as the input end of the second pulse former, and its other end is connected with one end of electric capacity C4, one end of resistance R7 respectively; The other end of resistance R7 is connected with one end of electric capacity C5, the in-phase input end of operational amplifier U3 respectively; The other end ground connection GND of electric capacity C5; The inverting input of operational amplifier U3 is connected with one end of resistance R8, one end of resistance R9 respectively; The other end ground connection GND of resistance R8; The output terminal of operational amplifier U3 is as the output terminal of the first pulse former, and it is connected with the other end of resistance R9, the other end of electric capacity C4 respectively.
Adopting the binary channels number system that provides of embodiment one to realize the measuring method of dose equivalent under high dose condition can with reference to following concrete grammar embodiment.
Embodiment two provides the measuring method of dose equivalent under a kind of high dose condition, and the method comprises:
Step one: initialization binary channels number system.
Particularly, the binary channels number system that initialization embodiment one provides.Configure the first pulse former and the second pulse former, make the first pulse former and the second pulse former export the pulse signal of different amplitude and width; Configuration first threshold voltage signal source and Second Threshold voltage signal source, make the ratio of the magnitude of voltage of the magnitude of voltage of first threshold voltage signal source and Second Threshold voltage signal source equal 0.75.
Step 2: select X-radiation field as in can radiation field, and the tube voltage of X-radiation field is set.Particularly, the tube voltage value of X-radiation field is 100kV, 150kV, 200kV, 250kV or 300kV.Need to illustrate, in the present embodiment, the scope of the average effective energy of radiation field is 48keV ~ 1.25MeV, and dose equivalent value adjustable range is 50mSv/h ~ 1Sv/h.
Step 3: the tube current of setting X-radiation field.Under each tube voltage value, realize the adjustment of dose equivalent value by changing tube current, need to illustrate, dose equivalent value setting range is 50mSv/h ~ 1Sv/h.
Step 4: adopt the radiation dose of binary channels number system to radiation source to count, and to the first counter N 1with the second counter N 2be weighted process and obtain binary channels count value M 1, the formula of wherein weighting process is:
M 1 = 1 2 · ( N 1 + N 2 ) · A · B ,
In above formula, the value of A is b is chronomere's conversion factor, for by unified for chronomere for hour.
Step 5: when identical with step 4 measuring condition, uses the measurement of standard metering instrument to obtain the measured value D of standard metering instrument 2, to the measured value D of standard metering instrument 2carry out conversion process and obtain standard metering instrument scaled value M 2, the described formula converting process is:
M 2=D 2·L·H,
In above formula L be 137sensitivity factor under Cs radiation field, represents 137under Cs radiation condition, the ratio of the measured value of binary channels number system binary channels count value hourly and standard metering instrument, particularly, by radiation protection standard laboratory in the present embodiment, adopts 137cs carries out gamma sensitivity measure, and trying to achieve sensitivity factor L is 214.3; H is dosage unit conversion factor, and for mSv is scaled to μ Sv, the unit due to the measured value of standard metering instrument is mSv, and therefore in the present embodiment, H value is 1000.
Step 6: calculate standard metering instrument scaled value M 2with binary channels count value M 1between ratio K r;
Step 7: the tube current resetting X-radiation field, repeats step 4 to step 6, obtains the binary channels count value M under different tube current condition 1, standard metering instrument measured value D 2, ratio K r, by the binary channels count value M under each measuring condition 1, ratio K rinverse, standard metering instrument measured value D 2, ratio K rbe saved to primary vector, secondary vector, the 3rd vector sum the 4th vector respectively;
Step 8: carry out linear fit to the data of primary vector in step 7 and the data of secondary vector and obtain the first straight-line equation, carries out linear fit to the data of the 3rd vector and the data of the 4th vector and obtains the second straight-line equation.
Step 9: repeat step 2 to step 8 until complete first straight-line equation of X-radiation field under each tube voltage condition and the second straight-line equation.
Step 10: select 60co radiation field is as high-energy radiation field.Need to illustrate, in the present embodiment, the scope of the average effective energy of radiation field is 48keV ~ 1.25MeV, and dose equivalent value adjustable range is 50mSv/h ~ 1Sv/h.
Step 11: determine dose equivalent measuring position, namely determines in which position of radiation field to measure.This step, for adjusting dosage equivalent value, specifically realizes the adjustment of dose equivalent value by changing apparatus measures distance, need to illustrate, dose equivalent value setting range is 50mSv/h ~ 1Sv/h.
Step 12: adopt the radiation dose of binary channels number system to radiation source to count, and to the first counter N 1with the second counter N 2be weighted process and obtain binary channels count value M 1, the formula of wherein weighting process is:
M 1 = 1 2 · ( N 1 + N 2 ) · A · B ,
In above formula, the value of A is b is chronomere's conversion factor, for by unified for chronomere for hour.
Step 13: when identical with step 12 measuring condition, uses the measurement of standard metering instrument to obtain the measured value D of standard metering instrument 2, to the measured value D of standard metering instrument 2carry out conversion process and obtain standard metering instrument scaled value M 2, the described formula converting process is:
M 2=D 2·L·H,
In above formula L be 137sensitivity factor under Cs radiation field, represents 137under Cs radiation condition, the ratio of the measured value of binary channels number system binary channels count value hourly and standard metering instrument, particularly, by radiation protection standard laboratory in the present embodiment, adopts 137cs carries out gamma sensitivity measure, and trying to achieve sensitivity factor L is 214.3; H is dosage unit conversion factor, and for mSv is scaled to μ Sv, because the unit of the measured value adopting standard metering instrument is mSv, therefore in the present embodiment, H value is 1000.
Step 14: reset dose equivalent measuring position, repeats step 12 to step 13, obtains the binary channels count value M under various dose equivalent measurement position 1, standard metering instrument measured value D 2, ratio K r, by the binary channels count value M under each measuring condition 1, ratio K rinverse, standard metering instrument measured value D 2, ratio K rbe saved to primary vector, secondary vector, the 3rd vector sum the 4th vector respectively.
Step 15: carry out linear fit to the data of primary vector in step 14 and the data of secondary vector and obtain the first straight-line equation, carries out linear fit to the data of the 3rd vector and the data of the 4th vector and obtains the second straight-line equation.
Step 10 six: the first all straight-line equation obtained in step 9 and step 15 is combined into the first straight-line equation set, the the second all straight-line equation obtained in step 9 and step 15 is combined into the second straight-line equation set, in the first straight-line equation set, as interpolation processing, the first interpolation equation is obtained to the maximum straight-line equation of slope and the minimum straight-line equation of slope, in the second straight-line equation set, as interpolation processing, the second interpolation equation is obtained to the maximum straight-line equation of slope and the minimum straight-line equation of slope.
The interpolation method particularly of simple declaration below.If the maximum straight-line equation of slope is:
Y=a 1x+b 1, wherein a 1, b 1for constant,
The minimum straight-line equation of slope is:
Y=a 2x+b 2, wherein a 2, b 2for constant,
The interpolation equation that then interpolation obtains is: y=(a 1+ a 2) x/2+ (b 1+ b 2)/2.
Step 10 seven: adopt the first interpolation equation and the second interpolation equation to binary channels count value M 1revise.
Particularly, suppose that the first interpolation equation is: y=-2.6029e -8x+1.1098, the second interpolation equation is: y=0.00494875x+1.047755, by binary channels count value M 1substitute into the first interpolation equation as x variable, solve and draw y variable, solve the y variable drawn and be ratio K r, will solve and show that y substitutes into the second interpolation equation as y variable after getting inverse, and solve and show that the value of x variable is revised dose equivalent value.
Need to illustrate, in embodiment two, step 2 to step 9 is middle energy measure portion, step 10 to step 15 is high energy measure portion, during the present embodiment does not limit, the execution sequence of energy measure portion and high energy measure portion, namely also first can carry out high energy measurement, and then carries out middle can measurement.
As can be seen from the above embodiments:
The embodiment of the present invention adopts super low-power consumption apportion components and parts, and S set i-PIN detector, has low in hardware cost, realizes structure simple, is convenient to the advantages such as batch production, tallies with the national condition, can partly replace external pertinent instruments, improve economic benefit;
The embodiment of the present invention adopts different pulse shaping parameter and threshold value to arrange, and forms the number system of two channel counts non_uniform responses.Analyzed by lot of experimental data, adopt experimental formula, the account forms such as interpolation arithmetic, under finding out different-energy high dose condition, Accurate measurement under adopting same system of equations can complete high dose condition, therefore the inventive method has conveniently feature in actual applications;
Because single channel method of counting of the prior art at known rays energy, and need pass through the counting of dead-time control system, the dosage modifying factor be finally multiplied by under known rays energy condition completes the surveying work of dosage.And in actual measurement, radiation field average effective energy is that the ray energy feature of 48keV ~ 1.25Mev cannot be learnt by single channel method of counting, the embodiment of the present invention overcomes the deficiency that single channel method of counting exists in high dose is measured, realize the Measurement accuracy of high dose, take into account semiconductor detector counting and linearly and while energy response revise.

Claims (10)

1. a binary channels number system, it is characterized in that: it comprises semiconductor detector, Charge sensitive amplifier circuit, the first pulse former, the first comparer, the second pulse former, the second comparer, MCU, described first pulse former and the second pulse former are configured to the pulse signal exporting different amplitude and width respectively, described MCU comprises the first counter for counting the output pulse of the first comparer, the second counter for counting the output pulse of the second comparer
The input end of described Charge sensitive amplifier circuit is connected with semiconductor detector, and its output terminal is connected with the input end of the first pulse former and the input end of the second pulse former respectively; The input end of described first comparer is connected with the output terminal of the first pulse former and first threshold voltage signal source respectively, the input end of described second comparer is connected with the output terminal of the second pulse former and Second Threshold voltage signal source respectively, the magnitude of voltage of described first threshold signal source and the magnitude of voltage of Second Threshold signal source unequal; Described MCU is connected with the output terminal of the first comparer and the output terminal of the second comparer respectively.
2. binary channels number system according to claim 1, it is characterized in that described Charge sensitive amplifier circuit comprises JFET, first resistance, second resistance, first electric capacity and the first operational amplifier, the grid of described JFET as Charge sensitive amplifier circuit input end respectively with the anode of semiconductor detector, one end of second resistance, one end of first electric capacity connects, the source ground of described JFET, the drain electrode of described JFET respectively with one end of the first resistance, the input end of the first operational amplifier connects, the negative electrode of described semiconductor detector, the other end of the first resistance is all connected with the first voltage source, the output terminal of described first operational amplifier as Charge sensitive amplifier circuit output terminal respectively with the other end of the second resistance, the other end of the first electric capacity connects.
3. binary channels number system according to claim 1 and 2, is characterized in that the magnitude of voltage of described first threshold voltage signal source and the magnitude of voltage ratio of Second Threshold voltage signal source are less than or equal to 0.8.
4. binary channels number system according to claim 1, is characterized in that described semiconductor detector is Si-Pin detector.
5. the measuring method of dose equivalent under high dose condition, is characterized in that comprising:
Steps A: arbitrary described binary channels number system in initialization Claims 1-4;
Step B: selective radiation field, described radiation field is middle energy radiation field or high-energy radiation field;
Step C: determine measuring condition, if the radiation field selected is middle energy radiation field, then described measuring condition is the tube current of radiation source, if the radiation field selected is high-energy radiation field, then described measuring condition is dose equivalent measuring position;
Step D: under determined measuring condition, adopts the radiation dose of described binary channels number system to radiation source to count, and to the first counter N 1with the second counter N 2be weighted process and obtain binary channels count value M 1, the formula of described weighting process is:
M 1 = 1 2 · ( N 1 + N 2 ) · A · B ,
In above formula, the value of A is or b is chronomere's conversion factor;
Step e: under determined measuring condition, uses the measurement of standard metering instrument to obtain the measured value D of standard metering instrument 2, to the measured value D of standard metering instrument 2carry out conversion process and obtain standard metering instrument scaled value M 2, the described formula converting process is:
M 2=D 2·L·H,
In above formula L be 137sensitivity factor under Cs radiation field, H is dosage unit conversion factor;
Step F: calculate standard metering instrument scaled value M 2with binary channels count value M 1between ratio K r;
Step G: redefine measuring condition, repeats step D to step F, obtains the binary channels count value M under different measuring condition 1, standard metering instrument measured value D 2, ratio K r, by the binary channels count value M under each measuring condition 1, ratio K rinverse, standard metering instrument measured value D 2, ratio K rbe saved to primary vector, secondary vector, the 3rd vector sum the 4th vector respectively;
Step H: carry out linear fit to the data of primary vector and the data of secondary vector and obtain the first straight-line equation, carries out linear fit to the data of the 3rd vector and the data of the 4th vector and obtains the second straight-line equation;
Step I: repeat step B to step H until complete the measurement of middle energy radiation field and high-energy radiation field, particularly, if the radiation field that step B selects is middle energy radiation field, the tube voltage of energy radiation field radiation source in then adjusting, repeat step C to step H, obtaining can first straight-line equation of radiation field under each tube voltage condition and the second straight-line equation, if the radiation field that step B selects is high-energy radiation field, then performs step C to step H and obtain high-energy radiation the first straight-line equation after the match and the second straight-line equation;
Step J: the first all straight-line equations is combined into the first straight-line equation set, the second all straight-line equations is combined into the second straight-line equation set, in the first straight-line equation set, as interpolation processing, the first interpolation equation is obtained to the maximum straight-line equation of slope and the minimum straight-line equation of slope, in the second straight-line equation set, as interpolation processing, the second interpolation equation is obtained to the maximum straight-line equation of slope and the minimum straight-line equation of slope;
Step K: adopt the first interpolation equation and the second interpolation equation to binary channels count value M 1revise.
6. the measuring method of dose equivalent under high dose condition according to claim 5, is characterized in that described step K specifically comprises:
Step K 1: by binary channels count value M 1substitute into the first interpolation equation to solve and obtain ratio K rinverse;
Step K 2: the ratio K that step K 1 is tried to achieve rsubstitute into the second interpolation equation to solve and obtain revised dose equivalent value.
7. the measuring method of dose equivalent under high dose condition according to claim 5, it is characterized in that described middle can radiation field be X-radiation field.
8. the measuring method of dose equivalent under high dose condition according to claim 7, is characterized in that the tube voltage value of described X-radiation field is 100kV, 150kV, 200kV, 250kV or 300kV.
9. the measuring method of dose equivalent under high dose condition according to claim 5, is characterized in that described high-energy radiation field is 60co radiation field.
10. the measuring method of dose equivalent under high dose condition according to claim 5, it is characterized in that the scope of the average effective energy of radiation field in described step B is 48keV ~ 1.25MeV, dose equivalent value adjustable range is 50mSv/h ~ 1Sv/h.
CN201510104261.2A 2015-03-10 2015-03-10 The measuring method of dose equivalent under the conditions of binary channels number system and high dose Active CN104678423B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510104261.2A CN104678423B (en) 2015-03-10 2015-03-10 The measuring method of dose equivalent under the conditions of binary channels number system and high dose

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510104261.2A CN104678423B (en) 2015-03-10 2015-03-10 The measuring method of dose equivalent under the conditions of binary channels number system and high dose

Publications (2)

Publication Number Publication Date
CN104678423A true CN104678423A (en) 2015-06-03
CN104678423B CN104678423B (en) 2017-05-31

Family

ID=53313743

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510104261.2A Active CN104678423B (en) 2015-03-10 2015-03-10 The measuring method of dose equivalent under the conditions of binary channels number system and high dose

Country Status (1)

Country Link
CN (1) CN104678423B (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105589091A (en) * 2015-12-24 2016-05-18 陕西迪泰克新材料有限公司 Cadmium zinc telluride (CZT) area gamma detector
CN106991511A (en) * 2016-01-20 2017-07-28 华北电力大学 The recombination radiation source strength backstepping method and system of nuclear power plant's point source line source face source combination
CN107391898A (en) * 2016-05-16 2017-11-24 中国辐射防护研究院 The computational methods of aquatile dose conversion factor
CN107657119A (en) * 2017-09-29 2018-02-02 环太平洋高科技开发有限公司 Improve the measuring method of gamma spectra data quality
CN109283121A (en) * 2018-10-11 2019-01-29 迈克医疗电子有限公司 Pulse recognition method and apparatus, analysis instrument, storage medium
CN113406687A (en) * 2021-06-21 2021-09-17 中国兵器装备集团自动化研究所有限公司 Electronic personal dosimeter with ultra-wideband wireless communication function and communication method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63225187A (en) * 1987-03-16 1988-09-20 Hitachi Medical Corp Neutron dose equivalent meter
DE10050887A1 (en) * 2000-10-13 2002-05-02 Rados Technology Gmbh Detection of gamma-radiation from radionuclide in moving loose material, comprises separating signals into one of two channels by pulse height by one or more scintillators for rapid and accurate measurement
CN101082674A (en) * 2007-07-19 2007-12-05 清华大学 Method for eliminating counting loss of dose equivalent instrument around neutron
CN102478659A (en) * 2010-11-30 2012-05-30 中国辐射防护研究院 Method for measuring personal dosimeter energy graded scales

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63225187A (en) * 1987-03-16 1988-09-20 Hitachi Medical Corp Neutron dose equivalent meter
DE10050887A1 (en) * 2000-10-13 2002-05-02 Rados Technology Gmbh Detection of gamma-radiation from radionuclide in moving loose material, comprises separating signals into one of two channels by pulse height by one or more scintillators for rapid and accurate measurement
CN101082674A (en) * 2007-07-19 2007-12-05 清华大学 Method for eliminating counting loss of dose equivalent instrument around neutron
CN102478659A (en) * 2010-11-30 2012-05-30 中国辐射防护研究院 Method for measuring personal dosimeter energy graded scales

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
TH.LONCOL, ET.AL: "Entrance and exit dose measurements with semiconductors and thermoluminescent dosemeters:a comparison of methods and in vivo results", 《RADIOTHERAPY AND ONCOLOGY》 *
黄平 等: "数字电子个人剂量计的设计与性能测试研究", 《中国测试》 *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105589091A (en) * 2015-12-24 2016-05-18 陕西迪泰克新材料有限公司 Cadmium zinc telluride (CZT) area gamma detector
CN105589091B (en) * 2015-12-24 2018-07-31 陕西迪泰克新材料有限公司 A kind of regions cadmium-zinc-teiluride CZT gamma detector
CN106991511A (en) * 2016-01-20 2017-07-28 华北电力大学 The recombination radiation source strength backstepping method and system of nuclear power plant's point source line source face source combination
CN106991511B (en) * 2016-01-20 2020-11-03 华北电力大学 Strong backward thrust method and system for point source, line source and surface source combined composite radiation source of nuclear power plant
CN107391898A (en) * 2016-05-16 2017-11-24 中国辐射防护研究院 The computational methods of aquatile dose conversion factor
CN107391898B (en) * 2016-05-16 2021-09-24 中国辐射防护研究院 Method for calculating aquatic organism dosage conversion factor
CN107657119A (en) * 2017-09-29 2018-02-02 环太平洋高科技开发有限公司 Improve the measuring method of gamma spectra data quality
CN109283121A (en) * 2018-10-11 2019-01-29 迈克医疗电子有限公司 Pulse recognition method and apparatus, analysis instrument, storage medium
CN109283121B (en) * 2018-10-11 2021-04-09 迈克医疗电子有限公司 Pulse recognition method and device, analysis instrument and storage medium
CN113406687A (en) * 2021-06-21 2021-09-17 中国兵器装备集团自动化研究所有限公司 Electronic personal dosimeter with ultra-wideband wireless communication function and communication method

Also Published As

Publication number Publication date
CN104678423B (en) 2017-05-31

Similar Documents

Publication Publication Date Title
CN104678423A (en) Double-channel counting system and measurement method of dose equivalent in high dose condition
CN105824817B (en) A kind of digitizing solution of scintillation pulse
CN101796430B (en) Neutron dosimeter
CN103605148B (en) A kind of gamma spectrometry method under high count rate
CN111045072B (en) Be applicable to CeBr 3 Gamma energy spectrum iteration spectrum solving method of detector
CN111913205A (en) Nuclear emergency multifunctional portable radiation monitoring system and monitoring method
CN108279431B (en) Portable radiation dosimeter, dose monitoring equipment and segmented processing method
CN109975855A (en) A kind of wide-range intelligence X- gamma dose rate instrument device based on Bluetooth technology
CN110988967A (en) Method for expanding dosage rate range of environment X and gamma radiation detector
CN107462917A (en) A kind of ionising radiation detection device and method
WO2023202398A1 (en) Energy spectrum-dose measurement method and apparatus
CN104199078A (en) Scintillation detector allowing temperature effect correction
CN115575435A (en) Method for analyzing radioactive iodine in gaseous effluent
CN102636804A (en) Method for measuring gamma/X radiation field intensity and current type semiconductor detection structure
CN212515056U (en) Nuclear emergency multifunctional portable radiation monitoring system
CN115166813A (en) Energy spectrum correction method applied to semiconductor gamma detector
RU2613594C1 (en) Method of dose rate measurement in mixed apparatus gamma-radiadion spectrum
Ramirez-Jimenez et al. Considerations on the measurement of practical peak voltage in diagnostic radiology
Hurst et al. Principles and Techniques of Mixed Radiation Dosimetry: Application to Acute Lethality Studies of Mice with the Cyclotron
Johnson et al. FORIST unfolding code
Conway et al. Determination of the Low-Energy Region of the Tritium Beta Spectrum
RU2009103965A (en) METHOD OF ELECTRIC VERIFICATION OF MILITARY METERS OF GAMMA RADIATION DOSE POWER
CN108152845B (en) Air absorption dose rate measuring method based on pulse height spectrum
Rebai et al. Correlations in energy in cosmic ray air showers radio-detected by CODALEMA
Lee et al. A Study On Low Radiation Measurement of Radiation Measuring Devices and Improvement of Reaction Speed according to the Rapid Change of Radiation Dose

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20191017

Address after: 610021 Sichuan city of Chengdu province Chenghua District Yushuang Road No. 10

Patentee after: Radiation Institute of NIMTT

Address before: 610000 Sichuan city of Chengdu province Chenghua District Yushuang Road No. 10 Building Room 204

Patentee before: Sichuan Zhongce Technology Development Co.,Ltd.