CN105576504A - Laser based on semiconductor interface heterogeneous joint structure - Google Patents
Laser based on semiconductor interface heterogeneous joint structure Download PDFInfo
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- CN105576504A CN105576504A CN201610090495.0A CN201610090495A CN105576504A CN 105576504 A CN105576504 A CN 105576504A CN 201610090495 A CN201610090495 A CN 201610090495A CN 105576504 A CN105576504 A CN 105576504A
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- Prior art keywords
- joint structure
- laser
- heterogeneous
- inp
- heterogeneous joint
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Abstract
The invention provides a laser based on a semiconductor interface heterogeneous joint structure. The laser comprises a lower electrode, an underlay, a lower contact layer, an active layer, an upper contact layer, a cover layer, a dielectric film layer and an upper electrode which are arranged successively. The active layer is the semiconductor heterogeneous joint structure; according to the semiconductor heterogeneous joint structure, one side of the heterogeneous joint structure is a material homogeneous with the underlay; the other side of the heterogeneous joint is a material with the same lattice constant to that of the underlay and with the band gap width different from that of the underlay. The laser is featured by high output power and stable preparation technology and has distinctive application prospects in the high technology fields such as laser ranging, laser guidance, coherent communication, atmosphere research, medical apparatus and instruments, optical image processing and laser printers.
Description
Technical field
The present invention relates to a kind of semiconductor device, particularly the laser of the heterogeneous joint structure of a kind of based semiconductor.
Background technology
Laser is one of invention of great significance in modern science technology, and 1064nm band laser has in high-tech areas such as laser ranging, laser guidance, coherent communication, atmospheric research, medicine equipment, optical image security, laser printers the application prospect shown unique characteristics.20 century 70 middle and later periods, people have carried out multi-faceted exploratory development from material, device to structure around the power output and efficiency how improving 1064nm band laser, impel people raising the efficiency,
Deeper research and development are carried out in aspect that is miniaturized and stable performance.
Present stage, most of solid state laser adopts the technology of semiconductor laser or diode array pumping, has the advantage of himself: longevity of service, low-power consumption, light light conversion efficiency is high, volume is little, is convenient to small design.But during for superpower laser, need laser material cooling protection, carry out accurate temperature and control to make it keep steady-working state.
Semiconductor laser has many outstanding advantages: conversion efficiency is very high, long service life, has the ability of directly modulation, and volume is little, lightweight, low price.The most frequently used laser material of 1064nm band laser is InGaAsP/InP system, and the shortcoming of this system is that high-temperature behavior is not good, complex manufacturing technology.
Summary of the invention
For the deficiencies in the prior art part, the invention provides the laser of the heterogeneous joint structure of a kind of based semiconductor.
The present invention realizes by the following technical solutions: the laser of the heterogeneous joint structure in a kind of based semiconductor interface, comprise set gradually bottom electrode, substrate, lower contact, active layer, upper contact layer, cap rock, media coating, top electrode form, it is characterized in that: described active layer is heterogeneous semiconductor joint structure, described heterogeneous semiconductor joint structure, the side of described heterogeneous joint structure is the material with substrate homogeneity, and the opposite side of heterogeneous joint is identical from substrate lattice constant and energy gap is different material.
Further, described heterogeneous semiconductor joint structure has the two-dimensional electron gas luminous mechanism that quantum effect strengthens, and described heterogeneous semiconductor joint structure has the two-dimensional electron gas luminous mechanism that quantum effect strengthens, and its luminescence band is 1064nm section.
In an embodiment of the present invention, described backing material is InP.
In an embodiment of the present invention, described semiconductor heterostructure is substance structure.
In an embodiment of the present invention, heterogeneous joint structure is InP/InAlAs, and wherein InP layer thickness is 20-40nm, InAlAs layer thickness is 20-40nm.
In an embodiment of the present invention, semiconductor heterostructure is multiplet.
In an embodiment of the present invention, heterogeneous joint structure is InP/InAlAs, and the heterojunction cycle is 40-80nm, InP layer thickness be 20-40nm, InAlAs layer thickness is 20-40nm.
In an embodiment of the present invention, heterogeneous joint structure is InP/InAlAs, and the heterojunction cycle is greater than 80nm, and its InP layer thickness is for being greater than 40nm, and InAlAs layer thickness is for being greater than 40nm.
Compared with prior art: laser material proposed by the invention is InAlAs/InP system, this Material growth is in InP substrate, and emission wavelength meets 1064nm wave band, has stable high-temperature performance, and luminous power is high, and manufacture craft is simple.
Accompanying drawing explanation
Fig. 1 is the structural representation of one embodiment of the invention.
Fig. 2 is the structural representation of another embodiment of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, the invention will be further described.
The laser of the heterogeneous joint interfacial structure of based semiconductor of the present invention, as shown in Figure 1, comprises the bottom electrode 1, substrate 2, lower contact layer 3, active layer 4, cap rock 5, upper contact layer 6, media coating 7, the top electrode 8 that from bottom to top arrange and forms.Described active layer 4 is heterogeneous semiconductor joint interfacial structure, and the side of described heterogeneous joint structure is the material with substrate homogeneity, and the opposite side of heterogeneous joint is identical from substrate lattice constant and energy gap is different material.This structure has the two-dimensional electron gas luminous mechanism of heterogeneous semiconductor joint interface local, and its luminescence band is 1064nm section.
Described backing material is InP.
In an embodiment of the present invention, described semiconductor heterostructure is substance structure.
In an embodiment of the present invention, heterogeneous joint structure is InP/InAlAs, and wherein InP layer thickness is 20-40nm, InAlAs layer thickness is 20-40nm.
In an alternative embodiment of the invention, semiconductor heterostructure is multiplet.
Heterogeneous joint structure is InP/InAlAs, and the heterojunction cycle is 40-80nm, InP layer thickness be 20-40nm, InAlAs layer thickness is 20-40nm.
Heterogeneous joint structure is InP/InAlAs, and the heterojunction cycle is greater than 80nm, and its InP layer thickness is for being greater than 40nm, and InAlAs layer thickness is for being greater than 40nm.
The laser of described based semiconductor heterogeneous joint interfacial structure comprises following several generation method.
Embodiment one:
With reference to figure 1, the bottom electrode 1 from bottom to top arranged, substrate 2, lower contact layer 3, active layer 4, cap rock 5, upper contact layer 6, media coating 7, top electrode 8 are formed, and active area is InP/InAlAs single heterojunction.By pre-designed epitaxial structure, MOCVD or MBE is adopted to grow epitaxial loayer.
Concrete steps are: the lower contact layer 3 of first growth and backing material homogeneity and doping in InP substrate 2, the core of regrowth this patent: InP/InAlAs heterojunction active area 4, wherein InP layer thickness is 20-40nm, InAlAs layer thickness is 20-40nm, InAlAs layer and InP layer Lattice Matching, the two-dimensional electron gas emission center wavelength of heterojunction boundary like this at 1064nm, and then grows cap rock 5, the upper contact layer 6 of doping.These extensions above-mentioned, MOCVD or MBE can realize accurate control, is then processed to form bottom electrode 1, deielectric-coating 7 and top electrode 8 through semiconductor micro-nano.
Embodiment two:
With reference to figure 2, the bottom electrode 1 from bottom to top arranged, substrate 2, lower contact layer 3, active layer 4, cap rock 5, upper contact layer 6, media coating 7, top electrode 8 are formed, and Multiple heterostructures is repeated for [InP/InAlAs] in active area, and the heterojunction cycle is 40-80nm.By pre-designed epitaxial structure, MOCVD or MBE is adopted to grow epitaxial loayer.
Concrete steps are: the lower contact layer 3 of first growth and backing material homogeneity and doping in InP substrate 2, the core of regrowth this patent: InP/InAlAs heterojunction active area 4, wherein InP layer thickness is 20-40nm, InAlAs layer thickness is 20-40nm, InAlAs layer and InP layer Lattice Matching, the two-dimensional electron gas emission center wavelength of heterojunction boundary like this is at 1064nm, repeated growth InP/InAlAs heterojunction like this, the two-dimensional electron gas emission center wavelength of this repetition heterojunction boundary is at 1064nm, and then grow cap rock 5, the upper contact layer 6 of doping.These extensions above-mentioned, MOCVD or MBE can realize accurate control, is then processed to form bottom electrode 1, deielectric-coating 7 and top electrode 8 through semiconductor micro-nano.
Embodiment three:
With reference to figure 2, the bottom electrode 1 from bottom to top arranged, substrate 2, lower contact layer 3, active layer 4, cap rock 5, upper contact layer 6, media coating 7, top electrode 8 are formed, and Multiple heterostructures is repeated for [InP/InAlAs] in active area, and the heterojunction cycle is for being greater than 80nm.By pre-designed epitaxial structure, MOCVD or MBE is adopted to grow epitaxial loayer.
Concrete steps are: the lower contact layer 3 of first growth and backing material homogeneity and doping in InP substrate 2, the core of regrowth this patent: InP/InAlAs heterojunction active area 4, wherein InP layer thickness is for being greater than 40nm, InAlAs layer thickness is for being greater than 40nm, InAlAs layer and InP layer Lattice Matching, repeated growth InP/InAlAs heterojunction like this, the two-dimensional electron gas emission center wavelength of this heterojunction boundary is at 1064nm, and then grow cap rock 5, the upper contact layer 6 of doping.These extensions above-mentioned, MOCVD or MBE can realize accurate control, is then processed to form bottom electrode 1, deielectric-coating 7 and top electrode 8 through semiconductor micro-nano.
Laser material proposed by the invention is InAlAs/InP system, and this Material growth is in InP substrate, and emission wavelength meets 1064nm wave band, has stable high-temperature performance, and luminous power is high, and manufacture craft is simple.
Be more than preferred embodiment of the present invention, all changes done according to technical solution of the present invention, when the function produced does not exceed the scope of technical solution of the present invention, all belong to protection scope of the present invention.
Claims (8)
1. the laser of the heterogeneous joint structure in based semiconductor interface, comprise set gradually bottom electrode, substrate, lower contact, active layer, upper contact layer, cap rock, media coating, top electrode form, it is characterized in that: described active layer is heterogeneous semiconductor joint structure, described heterogeneous semiconductor joint structure, the side of described heterogeneous joint structure is the material with substrate homogeneity, and the opposite side of heterogeneous joint is identical from substrate lattice constant and energy gap is different material.
2. the laser of the heterogeneous joint structure in based semiconductor interface according to claim 1, is characterized in that: described heterogeneous semiconductor joint structure has the two-dimensional electron gas luminous mechanism that quantum effect strengthens, and its luminescence band is 1064nm section.
3. the laser of the heterogeneous joint structure in based semiconductor interface according to claim 1, is characterized in that: described backing material is InP.
4. the laser of the heterogeneous joint structure in the based semiconductor interface according to claim 1,2 or 3, is characterized in that: described semiconductor heterostructure is substance structure.
5. the laser of the heterogeneous joint structure in based semiconductor interface according to claim 4, is characterized in that: heterogeneous joint structure is InP/InAlAs, and wherein InP layer thickness is 20-40nm, InAlAs layer thickness is 20-40nm.
6. the laser of the heterogeneous joint structure in the based semiconductor interface according to claim 1,2 or 3, is characterized in that: semiconductor heterostructure is multiplet.
7. the laser of the heterogeneous joint structure in based semiconductor interface according to claim 6, is characterized in that: heterogeneous joint structure is InP/InAlAs, and the heterojunction cycle is 40-80nm, InP layer thickness be 20-40nm, InAlAs layer thickness is 20-40nm.
8. the laser of the heterogeneous joint structure in based semiconductor interface according to claim 6, it is characterized in that: heterogeneous joint structure is InP/InAlAs, and the heterojunction cycle is greater than 80nm, its InP layer thickness is for being greater than 40nm, and InAlAs layer thickness is for being greater than 40nm.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030173571A1 (en) * | 2001-12-14 | 2003-09-18 | Kish Fred A. | Oxygen-doped Al-containing current blocking layers in active semiconductor devices |
| CN1731636A (en) * | 2005-08-12 | 2006-02-08 | 中国科学院上海微系统与信息技术研究所 | Indium phosphide middle-infrared band quantum cascaded laser buffer layer and preparation method thereof |
| CN1741329A (en) * | 2004-08-25 | 2006-03-01 | 中国科学院半导体研究所 | A kind of indium phosphide-base quantum cascade semiconductor laser and manufacture method |
| CN102946051A (en) * | 2012-10-10 | 2013-02-27 | 长春理工大学 | Dissymmetric waveguide 1060nm semiconductor laser structure |
-
2016
- 2016-02-18 CN CN201610090495.0A patent/CN105576504A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030173571A1 (en) * | 2001-12-14 | 2003-09-18 | Kish Fred A. | Oxygen-doped Al-containing current blocking layers in active semiconductor devices |
| CN1741329A (en) * | 2004-08-25 | 2006-03-01 | 中国科学院半导体研究所 | A kind of indium phosphide-base quantum cascade semiconductor laser and manufacture method |
| CN1731636A (en) * | 2005-08-12 | 2006-02-08 | 中国科学院上海微系统与信息技术研究所 | Indium phosphide middle-infrared band quantum cascaded laser buffer layer and preparation method thereof |
| CN102946051A (en) * | 2012-10-10 | 2013-02-27 | 长春理工大学 | Dissymmetric waveguide 1060nm semiconductor laser structure |
Non-Patent Citations (3)
| Title |
|---|
| HIROSHI MATSUI ET AL.: "Transport properties in InP/InAlAs type II single heterostructure", 《JAPANESE JOURNAL OF APPLIED PHYSICS》 * |
| K BORGI ET AL.: "Optical study of inverted interface in InP/InAlAs/InP structures grown by MOCVD", 《MICROELECTRONIC ENGINEERING》 * |
| 王君容 等: "《光电子器件》", 30 June 1982 * |
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Application publication date: 20160511 |