CN105576095B - A kind of iii-nitride light emitting devices and preparation method thereof - Google Patents
A kind of iii-nitride light emitting devices and preparation method thereof Download PDFInfo
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- CN105576095B CN105576095B CN201610135190.7A CN201610135190A CN105576095B CN 105576095 B CN105576095 B CN 105576095B CN 201610135190 A CN201610135190 A CN 201610135190A CN 105576095 B CN105576095 B CN 105576095B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 229910017857 MgGa Inorganic materials 0.000 claims abstract description 42
- 238000009825 accumulation Methods 0.000 claims abstract description 5
- 238000009792 diffusion process Methods 0.000 claims abstract description 5
- 150000004767 nitrides Chemical class 0.000 claims description 19
- 230000012010 growth Effects 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000872 buffer Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of iii-nitride light emitting devices and preparation method thereof, it has the p-type contact layer of MgGa nanocluster superlattices, current expansion bridge contact is used as by high conduction performance MgGa clusters, lift the diffusion length in the hole of p-type contact layer, improve the extended capability of p-type electric current, the accumulation effect of electric current is reduced, lifts luminous uniformity and ESD.
Description
Technical field
The present invention relates to semiconductor photoelectric device field, particularly a kind of iii-nitride light emitting devices and preparation method thereof.
Background technology
Now, light emitting diode（LED）, particularly iii-nitride light emitting devices are because of its higher luminous efficiency, common
Lighting field, which has obtained, to be widely applied.But because the efficiency of ionization because of p-type Mg is low, cause hole concentration low, p-type nitride
Current expansion is poor and Ohmic contact is poor, and electric current is easily accumulated in regional area, particularly electrode and extension bar after making electrode
（Finger）Around, the problems such as causing uniformity of luminance bad with ESD differences.
The content of the invention
In view of prior art has the problem of p-type hole extension length is relatively low, this case proposes that one kind has MgGa nanoclusters
Iii-nitride light emitting devices of cluster and preparation method thereof improve problem above.
The purpose of the present invention is：A kind of iii-nitride light emitting devices and preparation method thereof are provided, pass through high conduction performance
For MgGa clusters as current expansion bridge contact, it is inclined with current expansion that solution p-type causes hole concentration relatively low because Mg efficiency of ionization is low
The problem of poor, the diffusion length in lifting p-type contact layer hole, the extended capability of improvement p-type electric current, the accumulation for reducing electric current are imitated
Should, lift luminous uniformity and ESD.
According to the first aspect of the invention, a kind of iii-nitride light emitting devices, successively including substrate, cushion, N-type nitridation
Thing, MQW, p-type nitride and p-type contact layer, it is characterised in that：There is the p-type contact layer MgGa nanoclusters to surpass
Lattice, current expansion bridge contact is used as by high conduction performance MgGa clusters, solves p-type and cause hole dense because Mg efficiency of ionization is low
The problem of spending relatively low and current expansion deviation, the diffusion length in lifting p-type contact layer hole, the extended capability of improvement p-type electric current,
The accumulation effect of electric current is reduced, lifts luminous uniformity and ESD.
Further, the substrate is the suitable epitaxial growths such as sapphire, carborundum, silicon, gallium nitride, aluminium nitride, ZnO
Substrate.
Further, the size of the MgGa nanoclusters is 10 ~ 500nm, preferably 50nm.
Further, the MgGa nanoclusters superlattices are the nitridation that every layer of p-type nitride is covered with MgGa nanoclusters
Thing, it is 5 ~ 500nm, preferably 10nm per thickness degree, nanocluster densities are 1E7 ~ 1E12cm-2, preferably 1E9cm-2。
Further, the cycle of the MgGa nanoclusters superlattices is n times (N>=1 natural number), preferred N=3.
According to the second aspect of the invention, a kind of preparation method of iii-nitride light emitting devices, is comprised the steps of：（1）
Epitaxial growth buffer, N-type nitride, MQW, p-type nitride successively on the substrate 100；（2）Given birth to using low temperature method
The long p-type contact layer with high pit density, the saltation point as MgGa nanoclusters；（3）Growth has MgGa nanoclusters
The p-type contact layer of superlattices.
Further, the step（2）P-type contact layer of the growth with high pit density, cool the temperature to 600 first ~
800 degree, preferably 700 degree, are roughened nitride surface, form intensive pit, as the saltation point of MgGa nanoclusters, pit
Density is 1E7 ~ 1E12cm-2, preferably 1E9cm-2。
Further, the step（3）P-type contact layer with MgGa nanocluster superlattices, is first shut off NH3, leads to
Enter Cp2Mg, overlay Mg nano dots, be then shut off Mg, be passed through TMGa, generate MgGa nanoclusters, then, open NH3, lead to simultaneously
Enter Cp2Mg/TMGA, p-type contact layer of the growth with MgGa nanocluster superlattices, repeat above step, growth superlattices week
Phase is n times（N>=1 natural number).
Brief description of the drawings
Fig. 1 is the schematic diagram of the iii-nitride light emitting devices of the embodiment of the present invention.
Fig. 2 is the preparation method step of the iii-nitride light emitting devices of the embodiment of the present invention（1）Schematic diagram.
Fig. 3 is the preparation method step of the iii-nitride light emitting devices of the embodiment of the present invention（2）Schematic diagram.
Fig. 4 is the preparation method step of the iii-nitride light emitting devices of the embodiment of the present invention（3）Schematic diagram.
Fig. 5 is the preparation method step of the iii-nitride light emitting devices of the embodiment of the present invention（3）Formation superlattice period is N
Schematic diagram.
Fig. 6 is the floor map of the motor current extension of the iii-nitride light emitting devices of the embodiment of the present invention.
Illustrate：100：Substrate, 101：Cushion, 102：N-type nitride, 103：MQW, 104：P-type nitrogenizes
Thing, 105：P-type contact layer with MgGa nanocluster superlattices, 105a：The saltation point of nanocluster, 105b：MgGa nanometers
Cluster, 105c：The superlattices of MgGa nanoclusters.
Embodiment
Traditional iii-nitride light emitting devices, because p-type Mg efficiency of ionization is low, cause hole concentration low, p-type nitride
Current expansion is poor and Ohmic contact is poor, and electric current is easily accumulated in regional area after making electrode（Particularly electrode and Finger
Around）, cause that uniformity of luminance is bad and the problems such as ESD differences.The present invention is by making a kind of nitrogen with MgGa nanoclusters
Compound light emitting diode solves problem above, as shown in figure 1, include substrate 100, cushion 101, N-type nitride successively
102, MQW 103, p-type nitride 104, there are the p-type contact layer 105 of MgGa nanocluster superlattices, MgGa nanoclusters
The size of cluster about 50nm, density 1E9cm-2, it is 10nm per thickness degree, the cycle of MgGa nanocluster superlattices is 3 cycles.
The preparation method of iii-nitride light emitting devices proposed by the present invention, including step（1）~（3）, as shown in Fig. 2 ~ 4, and
Carry out periodically repeating n times (N>=1 natural number), superlattice structure is formed, as shown in Figure 5.
First, step（1）Using metal organic chemical vapor deposition（MOCVD）Epitaxial growth is delayed successively on the substrate 100
Layer 101, N-type nitride 102, MQW 103, p-type nitride 104 are rushed, as shown in Figure 2；
Then, step（2）The saltation point 105a of nanocluster of the growth with high pit density, as shown in figure 3, first will
Temperature is down to 650 degree, the coarse nitride of growing surface, forms intensive pit, recessed as the saltation point of MgGa nanoclusters
Pit density is 1E9cm-2。
Finally, step（3）P-type contact layer 105 of the growth with MgGa nanocluster superlattices, as shown in figure 4, closing first
NH3 is closed, temperature rises to 1000 degree, is passed through Cp2Mg 60s, overlays Mg nano dots, is then shut off Mg, is passed through TMGa 30s, generation
MgGa nanocluster 105b, size about 50nm, then, NH3 is opened, while be passed through Cp2Mg/TMGA, growth has MgGa nanometers
The p-type contact layer of cluster superlattices, every layer of thickness about 100nm, above step is repeated, the growth superlattices 105c cycles are n times
（N>=1 natural number), as shown in Figure 5.
The present invention forms high conduction performance MgGa groups by making the p-type contact layer with MgGa nanocluster superlattices
Cluster solves p-type and causes hole concentration relatively low because Mg efficiency of ionization rates are low and current expansion deviation as current expansion bridge contact
Problem, the diffusion length in lifting p-type contact layer hole, improves the extended capability of p-type electric current, reduces the accumulation effect of electric current, carry
Rise luminous uniformity and ESD, its effect diagram are as shown in Figure 5.
Embodiment of above is merely to illustrate the present invention, and is not intended to limit the present invention, those skilled in the art,
In the case of not departing from the spirit and scope of the present invention, various modifications and variation can be made to the present invention, thus it is all equivalent
Technical scheme fall within scope of the invention, scope of patent protection of the invention should regard Claims scope and limit.
Claims (9)
1. a kind of iii-nitride light emitting devices, successively including substrate, cushion, N-type nitride, MQW, p-type nitride with
And p-type contact layer, it is characterised in that：The p-type contact layer has MgGa nanocluster superlattices, passes through high conduction performance
For MgGa clusters as current expansion bridge contact, it is inclined with current expansion that solution p-type causes hole concentration relatively low because Mg efficiency of ionization is low
The problem of poor, the diffusion length in lifting p-type contact layer hole, the extended capability of improvement p-type electric current, the accumulation for reducing electric current are imitated
Should, lift luminous uniformity and ESD.
A kind of 2. iii-nitride light emitting devices according to claim 1, it is characterised in that：The substrate is sapphire, carbon
SiClx, silicon, gallium nitride, aluminium nitride, ZnO are adapted to the substrate of epitaxial growth.
A kind of 3. iii-nitride light emitting devices according to claim 1, it is characterised in that：The MgGa nanoclusters are super brilliant
Lattice are that every layer of p-type nitride contact layer is covered with MgGa nanoclusters, are 5 ~ 500nm per thickness degree.
A kind of 4. iii-nitride light emitting devices according to claim 1, it is characterised in that：The chi of the MgGa nanoclusters
Very little is 10 ~ 500nm.
A kind of 5. iii-nitride light emitting devices according to claim 1, it is characterised in that：The MgGa nanoclusters it is close
Spend for 1E7 ~ 1E12cm-2。
A kind of 6. iii-nitride light emitting devices according to claim 1, it is characterised in that：The MgGa nanoclusters are super brilliant
The cycle of lattice is n times, wherein N>=1.
7. a kind of preparation method of iii-nitride light emitting devices, is comprised the steps of：（1）Epitaxial growth buffers successively on substrate
Layer, N-type nitride, MQW, p-type nitride；（2）There is the p-type contact layer of high pit density using low temperature method growth,
Saltation point as MgGa nanoclusters；（3）P-type contact layer of the growth with MgGa nanocluster superlattices.
A kind of 8. preparation method of iii-nitride light emitting devices according to claim 7, it is characterised in that：The step
（2）P-type contact layer of the growth with high pit density, cools the temperature to 600 ~ 800 degree, is roughened nitride surface, is formed close
The pit of collection, as the saltation point of MgGa nanoclusters, pit density is 1E7 ~ 1E12cm-2。
A kind of 9. preparation method of iii-nitride light emitting devices according to claim 7, it is characterised in that：The step
（3）P-type contact layer with MgGa nanocluster superlattices, is first shut off NH3, is passed through Cp2Mg, overlays Mg nano dots, then
Mg is closed, is passed through TMGa, generates MgGa nanoclusters, then, opens NH3, while is passed through Cp2Mg/TMGA, growth has MgGa
The p-type contact layer of nanocluster superlattices, above step is repeated, growth superlattice period is n times, wherein N>=1.
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