CN105576089B - A kind of magnetic induction LED chip and preparation method thereof - Google Patents
A kind of magnetic induction LED chip and preparation method thereof Download PDFInfo
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- CN105576089B CN105576089B CN201610032273.3A CN201610032273A CN105576089B CN 105576089 B CN105576089 B CN 105576089B CN 201610032273 A CN201610032273 A CN 201610032273A CN 105576089 B CN105576089 B CN 105576089B
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- magnetic induction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
Abstract
The invention discloses a kind of magnetic induction LED chips and preparation method thereof, and chip includes light emitting structure, and the side of the light emitting structure is longitudinally surrounded with transparent magnetic induction coil.Method includes: that growth on a sapphire substrate forms GaN buffer layer；Growth forms n-GaN luminescent layer on GaN buffer layer；Growth forms epitaxial light emission structure on n-GaN luminescent layer；Sapphire Substrate and GaN buffer layer are removed；The side of n-GaN luminescent layer and epitaxial light emission structure is subjected to vertical wraparound by transparent magnetic induction coil.The side of n-GaN luminescent layer and epitaxial light emission structure is carried out vertical wraparound by using transparent magnetic induction coil by the present invention, traditional wired connection can be replaced by electromagnetic induction, to be shone using induced current excitation LED, existing welding procedure is casted off once and for all, greatly simplify packaging technology process, make to encapsulate more convenient efficient, effectively save production cost.It invention can be widely used in semiconductor field.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of magnetic induction LED chip and preparation method thereof.
Background technique
There are three kinds of horizontal chip, flip-chip, vertical chip structures using more extensive chip at present.Pass through ANSYS
Sunykatuib analysis, the electricity of the structure (anode, cathode, p-GaN, MQW, n-GaN) that three kinds of chips play a crucial role under the same conditions
Field intensity, current density, joule heat analysis.Wherein, maximum field strength relationship: level <upside-down mounting < vertical；Maximum current density
Relationship: vertical <upside-down mounting < level；Maximum Joule heat relationship: vertical <upside-down mounting < level.For horizontal structure and inverted structure close to n
Current density is larger at the step of electrode, flows vertically in p-GaN layer and quantum well layer electric current, generates crowding effect；In GaN layer
Especially lower half portion electric current lateral flow, current density is very big at step corner and negative electrode, generates crowding effect.By
In current crowding presence so that vast active region is not fully utilized, it is low to will lead to device light emitting efficiency, and
And cause uneven generation localized hyperthermia of generating heat, to generate larger thermal stress in this region, the reliability of LED is generated very big
It threatens.And the chip package bonding wire craft of the prior art can generate the problems such as rosin joint solder skip, and this external welding needs a large amount of
Gold thread increase production cost.
Summary of the invention
In order to solve the above-mentioned technical problem, packaging technology can be simplified the object of the present invention is to provide a kind of, save the cost
A kind of magnetic induction LED chip and preparation method thereof.
The technical solution used in the present invention is:
A kind of magnetic induction LED chip, including light emitting structure, the side of the light emitting structure are longitudinally surrounded with transparent magnetic strength
Answer coil.
As a kind of further improvement of magnetic induction LED chip, the magnetic induction coil is by conductive material and covers
Cover the insulating layer composition in conductive material surface.
As a kind of further improvement of magnetic induction LED chip, the light emitting structure include n-GaN luminescent layer and
The epitaxial light emission structure being formed on n-GaN luminescent layer.
As a kind of further improvement of magnetic induction LED chip, the epitaxial light emission structure is from top to bottom successively
For p-GaN layer, p-Al0.15Ga0.85N layers, In0.06Ga0.94N layers and n-Al0.15Ga0.85N layers, the n-Al0.15Ga0.85N layers of formation
On n-GaN luminescent layer.
As a kind of further improvement of magnetic induction LED chip, the epitaxial light emission structure is in inverted trapezoidal structure.
It is of the present invention another solution is that
A kind of magnetic induction LED core piece preparation method, comprising the following steps:
A, growth forms GaN buffer layer on a sapphire substrate；
B, growth forms n-GaN luminescent layer on GaN buffer layer；
C, growth forms epitaxial light emission structure on n-GaN luminescent layer；
D, Sapphire Substrate and GaN buffer layer are removed；
E, the side of n-GaN luminescent layer and epitaxial light emission structure is carried out by vertical wraparound by transparent magnetic induction coil,
Obtain magnetic induction LED chip.
As a kind of further improvement of magnetic induction LED core piece preparation method, the step C includes:
C1, n-Al is epitaxially-formed on n-GaN luminescent layer0.15Ga0.85N layers；
C2, in n-Al0.15Ga0.85Growth forms In on N layer0.06Ga0.94N layers；
C3, in In0.06Ga0.94Growth forms p-Al on N layer0.15Ga0.85N layers；
C4, in p-Al0.15Ga0.85Growth forms p-GaN layer on N layer.
The beneficial effects of the present invention are:
A kind of magnetic induction LED chip of the present invention and preparation method thereof sends out n-GaN by using transparent magnetic induction coil
The side of photosphere and epitaxial light emission structure carries out vertical wraparound, traditional wired connection can be replaced by electromagnetic induction, thus sharp
It is shone with induced current excitation LED, has casted off existing welding procedure once and for all, greatly simplified packaging technology process, made encapsulation more
Add convenient and efficient efficient, effectively save production cost.And Sapphire Substrate and GaN buffer layer can be replaced by magnetic induction coil
Function, effectively simplify expitaxial growth technology, substantially increase the light extraction efficiency of chip.
Detailed description of the invention
Specific embodiments of the present invention will be further explained with reference to the accompanying drawing:
Fig. 1 is a kind of structural schematic diagram of magnetic induction LED chip of the present invention；
Fig. 2 is a kind of step flow chart of magnetic induction LED core piece preparation method of the present invention.
Specific embodiment
With reference to Fig. 1, a kind of magnetic induction LED chip of the present invention, including light emitting structure, the side longitudinal ring of the light emitting structure
It is wound with transparent magnetic induction coil 1.
It is further used as preferred embodiment, the magnetic induction coil 1 is by conductive material and is covered on conductive material table
The insulating layer in face forms.
It is further used as preferred embodiment, the light emitting structure includes that n-GaN luminescent layer 6 is sent out with n-GaN is formed in
Epitaxial light emission structure on photosphere 6.
It is further used as preferred embodiment, the epitaxial light emission structure is followed successively by p-GaN layer 2, p- from top to bottom
Al0.15Ga0.85N layer 3, In0.06Ga0.94N layer 4 and n-Al0.15Ga0.85N layer 5, the n-Al0.15Ga0.85N layer 5 is formed in n-GaN
On luminescent layer 6.
It is further used as preferred embodiment, the epitaxial light emission structure is in inverted trapezoidal structure, passes through inverted trapezoidal structure
Light emission rate can be effectively increased.
Preferably, the transverse width of magnetic induction LED chip side magnetic induction coil 1 can be according to the design parameter tune of chip
It is whole, also can be made discrete bar shaped, can by a plurality of discrete mechanical strength and stability to increase chip of magnetic induction coil 1,
It can be by magnetic induction coil 1 by two sides and upper bottom all standing according to light-out effect.
With reference to Fig. 2, a kind of magnetic induction LED core piece preparation method of the present invention, comprising the following steps:
A, growth forms GaN buffer layer on a sapphire substrate；
B, growth forms n-GaN luminescent layer 6 on GaN buffer layer；
C, growth forms epitaxial light emission structure on n-GaN luminescent layer 6；
D, Sapphire Substrate and GaN buffer layer are removed；
E, the side of n-GaN luminescent layer 6 and epitaxial light emission structure is carried out by longitudinal ring by transparent magnetic induction coil 1
Around obtaining magnetic induction LED chip.
It is further used as preferred embodiment, the step C includes:
C1, n-Al is epitaxially-formed on n-GaN luminescent layer 60.15Ga0.85N layer 5；
C2, in n-Al0.15Ga0.85Growth forms In on N layer 50.06Ga0.94N layer 4；
C3, in In0.06Ga0.94Growth forms p-Al on N layer 40.15Ga0.85N layer 3；
C4, in p-Al0.15Ga0.85Growth forms p-GaN layer 2 on N layer 3.
In the specific embodiment of the invention, the magnetic induction LED chip is put into perpendicular to 1 plane of magnetic induction coil just
In alternating current magnetic field, magnetic induction LED chip will generate stable longitudinal induced current to excite n-GaN luminescent layer 6 to generate indigo plant
Light.And the stability and mechanical strength of magnetic induction LED chip can be guaranteed by magnetic induction coil 1, therefore can will be blue precious
Stone lining bottom and GaN buffer layer are removed.Since structure can be with chip interior layered structure in a ring for magnetic induction coil 1
Lattice Matching effect is not considered.By p-GaN layer 2, p-Al0.15Ga0.85N layer 3, In0.06Ga0.94N layer 4 and n-Al0.15Ga0.85N layer 5
This 4 layer material is made into inverted trapezoidal distribution according to refractive index to make the inverted u-shaped structure sending in portion in the chip of n-GaN luminescent layer 6
From the foregoing it can be that a kind of magnetic induction LED chip of the present invention and preparation method thereof is by using transparent magnetic strength
It answers coil 1 that the side of n-GaN luminescent layer 6 and epitaxial light emission structure is carried out vertical wraparound, tradition can be replaced by electromagnetic induction
Wired connection, thus using induced current excitation LED shine, casted off existing welding procedure once and for all, greatly simplified encapsulation
Process flow makes to encapsulate more convenient efficient, effectively save production cost.And indigo plant can be replaced by magnetic induction coil 1
The function of jewel substrate and GaN buffer layer effectively simplifies expitaxial growth technology, substantially increases the light extraction efficiency of chip.
It is to be illustrated to preferable implementation of the invention, but the invention is not limited to the implementation above
Example, those skilled in the art can also make various equivalent variations on the premise of without prejudice to spirit of the invention or replace
It changes, these equivalent deformations or replacement are all included in the scope defined by the claims of the present application.
Claims (4)
1. a kind of magnetic induction LED chip, it is characterised in that: including light emitting structure, the side of the light emitting structure is longitudinally surrounded with
Transparent magnetic induction coil；
The light emitting structure includes n-GaN luminescent layer and the epitaxial light emission structure that is formed on n-GaN luminescent layer；
The epitaxial light emission structure is followed successively by p-GaN layer, p-Al from top to bottom0.15Ga0.85N layers, In0.06Ga0.94N layers and n-
Al0.15Ga0.85N layers, the n-Al0.15Ga0.85N layers are formed on n-GaN luminescent layer.
2. a kind of magnetic induction LED chip according to claim 1, it is characterised in that: the magnetic induction coil is by conduction material
Expect and be covered on the insulating layer composition of conductive material surface.
3. a kind of magnetic induction LED chip according to claim 1, it is characterised in that: the epitaxial light emission structure is terraced in falling
Shape structure.
4. a kind of magnetic induction LED core piece preparation method, which comprises the following steps:
A, growth forms GaN buffer layer on a sapphire substrate；
B, growth forms n-GaN luminescent layer on GaN buffer layer；
C, growth forms epitaxial light emission structure on n-GaN luminescent layer；
D, Sapphire Substrate and GaN buffer layer are removed；
E, the side of n-GaN luminescent layer and epitaxial light emission structure is carried out by vertical wraparound by transparent magnetic induction coil, obtained
Magnetic induction LED chip；
The step C includes:
C1, n-Al is epitaxially-formed on n-GaN luminescent layer0.15Ga0.85N layers；
C2, in n-Al0.15Ga0.85Growth forms In on N layer0.06Ga0.94N layers；
C3, in In0.06Ga0.94Growth forms p-Al on N layer0.15Ga0.85N layers；
C4, in p-Al0.15Ga0.85Growth forms p-GaN layer on N layer.
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| CN201610032273.3A CN105576089B (en) | 2016-01-18 | 2016-01-18 | A kind of magnetic induction LED chip and preparation method thereof |
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| CN201610032273.3A CN105576089B (en) | 2016-01-18 | 2016-01-18 | A kind of magnetic induction LED chip and preparation method thereof |
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| CN105576089B true CN105576089B (en) | 2019-04-23 |
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| TWI458130B (en) * | 2012-02-06 | 2014-10-21 | Lextar Electronics Corp | Wireless solid state light emitting apparatus |
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Effective date of registration: 20200603 Address after: Room 10602, Building 1, Wangjing International Building, Fengcheng Sixth Road, Xi'an Economic and Technological Development Zone, Shaanxi 710000 Patentee after: SHAANXI ZHUANYI INTELLECTUAL PROPERTY OPERATION Co.,Ltd. Address before: 510631 No. 55, Zhongshan Avenue, Tianhe District, Guangdong, Guangzhou Patentee before: SOUTH CHINA NORMAL University Effective date of registration: 20200603 Address after: 225603 Dongting Lake Road, Gaoyou Economic Development Zone, Yangzhou, Jiangsu Patentee after: YANGZHOU GANGXIN PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Address before: Room 10602, Building 1, Wangjing International Building, Fengcheng Sixth Road, Xi'an Economic and Technological Development Zone, Shaanxi 710000 Patentee before: SHAANXI ZHUANYI INTELLECTUAL PROPERTY OPERATION Co.,Ltd. |
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