CN105576071A - Near-infrared integrated circular polarization detection detector - Google Patents
Near-infrared integrated circular polarization detection detector Download PDFInfo
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- CN105576071A CN105576071A CN201610149090.XA CN201610149090A CN105576071A CN 105576071 A CN105576071 A CN 105576071A CN 201610149090 A CN201610149090 A CN 201610149090A CN 105576071 A CN105576071 A CN 105576071A
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- metal spiral
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- layer substrate
- linear array
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- 230000010287 polarization Effects 0.000 title abstract description 17
- 238000001514 detection method Methods 0.000 title abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000005516 engineering process Methods 0.000 claims abstract description 9
- 238000003491 array Methods 0.000 claims abstract description 7
- 238000009713 electroplating Methods 0.000 claims abstract description 5
- 239000006117 anti-reflective coating Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 7
- 239000003292 glue Substances 0.000 claims description 6
- 238000001459 lithography Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 230000010354 integration Effects 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000005693 optoelectronics Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000003098 cholesteric effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention discloses a near-infrared integrated circular polarization detection detector comprising a dielectric layer substrate (4). One end of the dielectric layer substrate (4) is provided with a first photosensitive area (5) and a second photosensitive area (6). A first electrode (7) is correspondingly connected on the first photosensitive area (5). A second electrode (8) is correspondingly connected on the second photosensitive area (6). The other end of the dielectric layer substrate (4) is provided with an anti-reflection film layer (3) which is provided with a levorotation metal spiral line array (1) and a dextrorotation metal spiral line array (2). Light circular polarization is extracted by adopting the metal spiral line arrays of different rotation directions, and the metal spiral line arrays are integrated in the surface of the detector through the laser direct writing and electroplating technology so that the size can be greatly reduced, degree of integration and stability can be enhanced, and the detector has the advantages of wide range of operating wavelength.
Description
Technical field
The present invention relates to optical detector technology field, particularly a kind of near-infrared integrated form circle skewness detects detector.
Background technology
Only be made up of the electromagnetic wave of many different polarization states, each object radiation or reflection electromagnetic wave have different polarization states, occurring in nature circle skewness light component is less, therefore the application of round skewness mainly comes from active mode, especially when wave-length coverage is between 900 ~ 1700nm, need detect polarisation of light state again, to reflect some physical characteristic of transmission medium or reflecting surface after transmission or reflection.
Traditional round skewness extracts and comprises three kinds of methods, and one is utilize the inclined device of line and quarter-wave plate two optical elements be separated; Two is utilize cholesteric crystal material; Three is utilize Helical Fiber, then the light of circle skewness is carried out strength investigation by detector, and these methods exist that volume is large, assembly precision requirement is higher and the problem such as dispersion.
Summary of the invention
The technical problem to be solved in the present invention there is provided a kind of compact conformation, uses stable, that precision is high near-infrared integrated form circle skewness to detect detector.
Technical scheme of the present invention is as follows:
A kind of near-infrared integrated form circle skewness detects detector, comprise dielectric layer substrate, photosensitive unit is provided with in one end of described dielectric layer substrate, described photosensitive unit comprises the first photosensitive area and the second photosensitive area, on described first photosensitive area, correspondence is connected with the first electrode, and on described second photosensitive area, correspondence is connected with the second electrode; The other end of this dielectric layer substrate is provided with antireflective coating, described antireflective coating is provided with left-handed metal spiral linear array and dextrorotation metal spiral linear array, described left-handed metal spiral linear array is located at towards the side of the first photosensitive area, and described dextrorotation metal spiral linear array is located at towards the side of the second photosensitive area.
Adopt above structure, light can be allowed simultaneously by left-handed and dextrorotation two metal spiral linear arrays, for left-handed metal spiral linear array, when producing stronger induced current in the incident left-handed metal spiral linear array of left-handed rotatory polarization, and electric current transmits in left-handed metal spiral linear array with standing wave form, incident light by left-handed wire spiral array received not by, when the induced current in the incident left-handed metal spiral linear array of dextrorotation rotatory polarization is less, most of incident light can by left-handed metal spiral linear array, in like manner, for dextrorotation metal spiral linear array, left-handed rotatory polarization can pass through, dextrorotation rotatory polarization is then absorbed by dextrorotation metal spiral linear array, incident light is respectively through the technology helix array of different rotation direction, again through anti-reflection film, dielectric layer substrate, opto-electronic conversion is carried out in the first photosensitive area or the second photosensitive area that arrive corresponding end, then respectively photosignal is derived by the first electrode of corresponding end or the second electrode again, light strength ratio finally by two kinds of round skewnesses comparatively calculates the round skewness information can knowing incident light, compact conformation, use flexibly, accuracy of detection is high, good stability.
In order to make photoelectric conversion process have consistency, as preferably, described first photosensitive area and the second photosensitive area symmetry are diffused in dielectric layer substrate.
In order to improve the transmissivity of round skewness light, as preferably, the thickness of described antireflective coating is 180 ~ 260nm
In order to improve the polarization state efficiency of selection of round skewness light, as preferably, described left-handed metal spiral linear array comprises at least one metal spiral coil, also at least one metal spiral coil is comprised in described dextrorotation metal spiral linear array, the linear diameter of each described metal spiral coil is 60nm ~ 160nm, in two described metal spiral coil arrays, the spacing between adjacent two described metal spiral coils is 200nm ~ 600nm.
In order to improve the polarizing filter precision of the round skewness light of corresponding rotation direction, as preferably, the spiral number of turns of each described metal spiral coil is 2 ~ 5 circles, and screw pitch is 300nm ~ 620nm, and screw diameter is 120nm ~ 310nm.
Present invention also offers the preparation method that a kind of near-infrared integrated form circle skewness detects detector, comprise the following steps:
S1, the first photosensitive area and the second photosensitive area symmetry be diffused in same one end of dielectric layer substrate;
S2, set firmly the first electrode and the second electrode in the side symmetry of dielectric layer substrate, and make the first photosensitive area correspondence connect the first electrode, the second photosensitive area correspondence connects the second electrode;
S3, one deck antireflective coating is set at dielectric layer substrate opposite side;
S4, on antireflective coating spin coating one deck high resolution lithography glue;
S5, by three-dimensional laser direct writing technology write three-dimensional spiral structure;
S6, removal photoresist exposure figure;
S7, form metal helical structure by electro-plating method;
S8, finally glue to be dispelled.
At present conventional detection method exists that volume is large, assembly precision requires height, and the problem such as dispersion, the present invention adopts the round skewness of the metal spiral linear array of two kinds of different rotation directions to light to extract, metal spiral linear array is integrated in detector surface by laser direct-writing and electroplating technology, greatly reduce volume, improve integrated level and stability, and there is the wide advantage of operating wavelength range.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
As shown in Figure 1, the present invention is made up of dielectric layer substrate 4 etc., photosensitive unit is provided with in one end of described dielectric layer substrate 4, described photosensitive unit comprises the first photosensitive area 5 and the second photosensitive area 6, on described first photosensitive area 5, correspondence is connected with the first electrode 7, on described second photosensitive area 6, correspondence is connected with the second electrode 8, and described first photosensitive area 5 and the second photosensitive area 6 symmetry are diffused in dielectric layer substrate 4.
The other end of this dielectric layer substrate 4 is provided with antireflective coating 3, the thickness of described antireflective coating 3 is 180 ~ 260nm, be preferably 220nm, described antireflective coating 3 is provided with left-handed metal spiral linear array 1 and dextrorotation metal spiral linear array 2, described left-handed metal spiral linear array 1 is located at towards the side of the first photosensitive area 5, and described dextrorotation metal spiral linear array 2 is located at towards the side of the second photosensitive area 6.
Described left-handed metal spiral linear array 1 comprises six row's metal spiral coils, also comprises six row's metal spiral coils in described dextrorotation metal spiral linear array 2, and the linear diameter of each described metal spiral coil is 60nm ~ 160nm, is preferably 60nm; In two described metal spiral coil arrays, the spacing between adjacent two described metal spiral coils is 200nm ~ 600nm, is preferably 200nm; The spiral number of turns of each described metal spiral coil is 2 ~ 5 circles, is preferably 5 circles; Screw pitch is 300nm ~ 620nm, is preferably 300nm; Screw diameter is 120nm ~ 310nm, is preferably 150nm.
The present invention includes following preparation process:
S1, the first photosensitive area 5 and the second photosensitive area 6 symmetry are diffused in same one end of dielectric layer substrate 4, for carrying out opto-electronic conversion to incident light;
S2, set firmly the first electrode (7) and the second electrode (8) in the side symmetry of dielectric layer substrate (4), and make the first photosensitive area (5) correspondence connect the first electrode (7), second photosensitive area (6) correspondence connects the second electrode (8), for the signal of telecommunication after the rotatory polarization generation opto-electronic conversion of collecting corresponding rotation direction;
S3, one deck antireflective coating (3) is set at the opposite side of dielectric layer substrate (4), in order to improve light transmittance and to provide carrying for wire spiral
S4, on antireflective coating 3 spin coating one deck high resolution lithography glue, as prefab-form;
S5, by three-dimensional laser direct writing technology write three-dimensional spiral structure, precision is high, and modeling accuracy rate is high;
S6, removal photoresist exposure figure, form volute type air gap solid figure;
S7, in the solid figure of volute type air gap, form metal helical structure, stable molding by electro-plating method;
S8, finally glue to be dispelled, prevent impurity and photoetching cull polarisation-affecting optical filtering precision.
Using method of the present invention is as follows:
As shown in Figure 1, light can be allowed simultaneously by left-handed metal spiral linear array 1 and dextrorotation metal spiral linear array 2, for left-handed metal spiral linear array 1, when producing stronger induced current in the incident left-handed metal spiral linear array 1 of left-handed rotatory polarization, and electric current transmits in left-handed metal spiral linear array 1 with standing wave form, incident light received by left-handed metal spiral linear array 1 and not by; When the induced current in the incident left-handed metal spiral linear array 1 of dextrorotation rotatory polarization is less, most of incident light can by left-handed metal spiral linear array 1; In like manner, for dextrorotation metal spiral linear array 2, left-handed rotatory polarization can pass through, dextrorotation rotatory polarization is then absorbed by dextrorotation metal spiral linear array 2, incident light is respectively through the technology helix array of different rotation direction, again through antireflective coating 3, dielectric layer substrate 4, opto-electronic conversion is carried out by the first photosensitive area 5 of corresponding end or the second photosensitive area 6, derived by photosignal by the first electrode 7 of correspondence or the second electrode 8, the light strength ratio finally by two kinds of round skewnesses comparatively calculates the round skewness information can knowing incident light again.
When light is respectively from left-handed metal spiral linear array 1 or the incidence of dextrorotation metal spiral linear array 2, by the dextrorotation rotatory polarization that the major part of left-handed metal spiral linear array 1 is in light, by the left-handed rotatory polarization that the major part of dextrorotation metal spiral linear array 2 is in light, arrive corresponding photosensitive area according to light separately by two arrays again and carry out opto-electronic conversion, photosignal strength ratio finally by two kinds of round skewnesses comparatively calculates, to know the round skewness information of incident light, compact conformation, use flexibly, accuracy of detection is high, good stability.
It is consistent with prior art that the present invention does not describe part, and therefore not to repeat here.
These are only embodiments of the present invention; not thereby the scope of the claims of the present invention is limited; every equivalent structure utilizing specification of the present invention and accompanying drawing content to do, is directly or indirectly used in the technical field that other are relevant, all in like manner within scope of patent protection of the present invention.
Claims (6)
1. a near-infrared integrated form circle skewness detects detector, it is characterized in that: comprise dielectric layer substrate (4), photosensitive unit is provided with in one end of described dielectric layer substrate (4), described photosensitive unit comprises the first photosensitive area (5) and the second photosensitive area (6), be connected with the first electrode (7) in the upper correspondence of described first photosensitive area (5), be connected with the second electrode (8) in the upper correspondence of described second photosensitive area (6); The other end of this dielectric layer substrate (4) is provided with antireflective coating (3), described antireflective coating (3) is provided with left-handed metal spiral linear array (1) and dextrorotation metal spiral linear array (2), described left-handed metal spiral linear array (1) is located at towards the side of the first photosensitive area (5), and described dextrorotation metal spiral linear array (2) is located at towards the side of the second photosensitive area (6).
2. a kind of near-infrared integrated form circle skewness according to claim 1 detects detector, it is characterized in that: described first photosensitive area (5) and the second photosensitive area (6) symmetry are diffused in dielectric layer substrate (4).
3. a kind of near-infrared integrated form circle skewness according to claim 1 detects detector, it is characterized in that: the thickness of described antireflective coating (3) is 180 ~ 260nm.
4. a kind of near-infrared integrated form circle skewness according to claim 1 detects detector, it is characterized in that: described left-handed metal spiral linear array (1) comprises at least one metal spiral coil, also at least one metal spiral coil is comprised in described dextrorotation metal spiral linear array (2), the linear diameter of each described metal spiral coil is 60nm ~ 160nm, in two described metal spiral coil arrays, the spacing between adjacent two described metal spiral coils is 200nm ~ 600nm.
5. a kind of near-infrared integrated form circle skewness according to claim 4 detects detector, it is characterized in that: the spiral number of turns of each described metal spiral coil is 2 ~ 5 circles, and screw pitch is 300nm ~ 620nm, and screw diameter is 120nm ~ 310nm.
6. near-infrared integrated form circle skewness detects a preparation method for detector, comprises the following steps:
S1, the first photosensitive area (5) and the second photosensitive area (6) symmetry are diffused in same one end of dielectric layer substrate (4);
S2, set firmly the first electrode (7) and the second electrode (8) in the side symmetry of dielectric layer substrate (4), and making the first photosensitive area (5) correspondence connect the first electrode (7), the second photosensitive area (6) correspondence connects the second electrode (8);
S3, one deck antireflective coating (3) is set at the opposite side of dielectric layer substrate (4);
S4, at the upper spin coating one deck high resolution lithography glue of antireflective coating (3);
S5, by three-dimensional laser direct writing technology write three-dimensional spiral structure;
S6, removal photoresist exposure figure;
S7, form metal helical structure by electro-plating method;
S8, finally glue to be dispelled.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610149090.XA CN105576071B (en) | 2016-03-16 | 2016-03-16 | Near-infrared integrated circular polarization detection detector and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610149090.XA CN105576071B (en) | 2016-03-16 | 2016-03-16 | Near-infrared integrated circular polarization detection detector and preparation method thereof |
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| Publication Number | Publication Date |
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| CN105576071A true CN105576071A (en) | 2016-05-11 |
| CN105576071B CN105576071B (en) | 2017-04-19 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63131116A (en) * | 1986-11-21 | 1988-06-03 | Hitachi Ltd | Confocal microscope |
| CN103336313A (en) * | 2013-06-14 | 2013-10-02 | 业成光电（深圳）有限公司 | Infrared detection device and portable electronic equipment |
| US20150138553A1 (en) * | 2013-11-19 | 2015-05-21 | Samsung Electronics Co., Ltd. | Device for detecting surface plasmon and polarization by using topological insulator, method of manufacturing the device, and method of detecting surface plasmon and polarization |
-
2016
- 2016-03-16 CN CN201610149090.XA patent/CN105576071B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63131116A (en) * | 1986-11-21 | 1988-06-03 | Hitachi Ltd | Confocal microscope |
| CN103336313A (en) * | 2013-06-14 | 2013-10-02 | 业成光电（深圳）有限公司 | Infrared detection device and portable electronic equipment |
| US20150138553A1 (en) * | 2013-11-19 | 2015-05-21 | Samsung Electronics Co., Ltd. | Device for detecting surface plasmon and polarization by using topological insulator, method of manufacturing the device, and method of detecting surface plasmon and polarization |
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