CN105575800A - Wafer support ring and reaction chamber with wafer support ring - Google Patents
Wafer support ring and reaction chamber with wafer support ring Download PDFInfo
- Publication number
- CN105575800A CN105575800A CN201610107767.3A CN201610107767A CN105575800A CN 105575800 A CN105575800 A CN 105575800A CN 201610107767 A CN201610107767 A CN 201610107767A CN 105575800 A CN105575800 A CN 105575800A
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- CN
- China
- Prior art keywords
- wafer
- filler ring
- treatment
- reaction chamber
- treat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
Abstract
A wafer support ring is arranged in a three-dimension mode. The area of a to-be-processed wafer is smaller than that of an upper opening of the wafer support ring in a wafer placing direction. A clamping part for bearing the to-be-processed wafer is formed in the wafer support ring. As the wafer support ring is arranged in a three-dimension mode and the clamping part for bearing the to-be-processed wafer is formed in the wafer support ring, only the edges of the wafer are contacted with the wafer support ring, the heat loss is reduced maximally, the wafer is stably fixed, the rotation speed for wafer processing is improved, heating is more uniform, and the process stability is stronger.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of wafer filler ring and there is the reaction chamber of this wafer filler ring.
Background technology
Along with wafer size does larger and larger, the edge effect of wafer in rapid thermal anneal process is more and more serious, and the wafer area affected by edge effect is also increasing.Edge effect mainly refers to because crystal round fringes heat radiation is very fast, cause crystal round fringes temperature and central temperature inconsistent, and then cause device edge abnormal or increase the rough sledding such as additional defects.
At present, the common method of industry to the edge effect eliminated in rapid thermal anneal process increases thermal compensation at crystal round fringes, makes lip temperature consistent with central temperature.Apparently, the edge that industry adopts increases thermal compensation mode, has certain effect to elimination crystal round fringes effect.But simply by compensation lip temperature, the temperature distribution gradient of crystal round fringes, therefore cannot ensure that margin and center temperature is consistent, only can to greatest extent temperature be controlled target temperature in a big way in, therefore serious edge effect is can hardly be avoided.
Seek a kind of structure simple, easy to use, and the reaction chamber effectively can avoided the wafer filler ring of crystal round fringes effect and have this wafer filler ring becomes one of those skilled in the art's technical problem urgently to be resolved hurrily.
Therefore for prior art Problems existing, this case designer is by means of being engaged in the industry experience for many years, and active research improves, so there is a kind of wafer filler ring of the present invention and there is the reaction chamber of this wafer filler ring.
Summary of the invention
The present invention be directed in prior art, the common method of industry to the edge effect eliminated in rapid thermal anneal process increases thermal compensation at crystal round fringes, make lip temperature consistent with central temperature, but due to the temperature distribution gradient of crystal round fringes, therefore cannot ensure that margin and center temperature is consistent simply by compensation lip temperature, only can to greatest extent temperature be controlled target temperature in a big way in, therefore serious edge effect is unavoidable etc., and defect provides a kind of wafer filler ring.
Another object of the present invention is in prior art, the common method of industry to the edge effect eliminated in rapid thermal anneal process increases thermal compensation at crystal round fringes, make lip temperature consistent with central temperature, but due to the temperature distribution gradient of crystal round fringes, therefore cannot ensure that margin and center temperature is consistent simply by compensation lip temperature, only can to greatest extent temperature be controlled target temperature in a big way in, therefore serious edge effect is can hardly be avoided etc., defect provides a kind of reaction chamber with this wafer filler ring.
For realizing the object of the present invention, the invention provides a kind of wafer filler ring, described wafer filler ring spatially shape is arranged, and treat that the area of the wafer of PROCESS FOR TREATMENT is less than the upper end open area of the wafer placing direction of described wafer filler ring, and treat the holding section of the wafer of PROCESS FOR TREATMENT described in being formed to carry in described wafer filler ring.
Alternatively, the holding section of described wafer filler ring is tightened up form by being formed gradual change on wafer placing direction.
Alternatively, described wafer filler ring is bowl-shape setting.
Alternatively, when the described wafer until PROCESS FOR TREATMENT inserts described wafer filler ring, described in treat that the front of the wafer of PROCESS FOR TREATMENT is in the front of the upper end open of wafer filler ring, described wafer relies on deadweight to be fixedly installed on the holding section place of described wafer filler ring.
Alternatively, the wafer treating PROCESS FOR TREATMENT described in only contacts with described wafer filler ring outside edge.
Alternatively, that treats the wafer of PROCESS FOR TREATMENT described in turns scooter 2000 turns/min.
Alternatively, the lip temperature of described wafer is consistent with the central temperature of described wafer.
For realizing the another object of the present invention, the invention provides the reaction chamber that one has wafer filler ring, described in there is the reaction chamber of this wafer filler ring, comprising: reaction chamber body, each functional part be inside set; Filler ring carrier is towards the base plate place being arranged on described reaction chamber body; Wafer filler ring, is arranged on the side differing from base plate of described filler ring carrier; Telescopic prop, is arranged on the base plate of described reaction chamber body.
In sum, wafer filler ring of the present invention spatially shape is arranged, and by treating the holding section of the wafer of PROCESS FOR TREATMENT described in being formed to carry in described wafer filler ring, not only make described wafer only its outward flange contact with described wafer filler ring, reduce thermal loss to greatest extent, and stable fixing described wafer, improve the rotating speed of wafer process process, make it be heated evenly, technology stability is stronger.
Accompanying drawing explanation
Fig. 1 (a) is depicted as the stereogram of wafer filler ring of the present invention;
Fig. 1 (b) is depicted as the vertical view of wafer filler ring of the present invention;
Fig. 2 (a) is depicted as the stereogram that wafer is carried in wafer filler ring of the present invention holder;
Fig. 2 (b) is depicted as the vertical view that wafer is carried in wafer filler ring of the present invention holder;
Figure 3 shows that the structural representation of the reaction chamber with wafer filler ring of the present invention.
Embodiment
By describe in detail the invention technology contents, structural feature, reached object and effect, coordinate accompanying drawing to be described in detail below in conjunction with embodiment.
Along with wafer size does larger and larger, the edge effect of wafer in rapid thermal anneal process is more and more serious, and the wafer area affected by edge effect is also increasing.Edge effect mainly refers to because crystal round fringes heat radiation is very fast, cause crystal round fringes temperature and central temperature inconsistent, and then cause device edge abnormal or increase the rough sledding such as additional defects.
Refer to the stereogram that Fig. 1 (a) ~ Fig. 1 (b), Fig. 2 (a) ~ Fig. 2 (b), Fig. 1 (a) is depicted as wafer filler ring of the present invention.Fig. 1 (b) is depicted as the vertical view of wafer filler ring of the present invention.Fig. 2 (a) is depicted as the stereogram that wafer is carried in wafer filler ring of the present invention holder.Fig. 2 (b) is depicted as the vertical view that wafer is carried in wafer filler ring of the present invention holder.Described wafer filler ring 1 spatially shape is arranged, and treat that the area of the wafer 2 of PROCESS FOR TREATMENT is less than the upper end open area of the wafer placing direction of described wafer filler ring 1, and in described wafer filler ring 1, form the holding section 11 in order to treat the wafer 2 of PROCESS FOR TREATMENT described in carrying.Significantly, the holding section 11 of described wafer filler ring 1 is tightened up form by being formed gradual change on wafer placing direction.
As concrete execution mode, preferably, described wafer filler ring 1 is in bowl-shape setting.When described insert described wafer filler ring 1 until the wafer 2 of PROCESS FOR TREATMENT time, described in treat that the front of the wafer 2 of PROCESS FOR TREATMENT is in the front of the upper end open of wafer filler ring 1, described wafer relies on deadweight to be fixedly installed on holding section 11 place of described wafer filler ring 1.Treat that the heat that the wafer 2 of PROCESS FOR TREATMENT and the contact of wafer filler ring 1 cause scatters and disappears fast to reduce further, more preferably, described in treat PROCESS FOR TREATMENT wafer 2 only contact with described wafer filler ring 1 outside edge.
As those skilled in the art, easy understand ground, more traditional wafer filler ring, wafer filler ring 1 of the present invention can by holding section 11 stable fixing described in treat the wafer 2 of PROCESS FOR TREATMENT, and then described in can improving, treat the rotating speed of wafer 2 of PROCESS FOR TREATMENT.Treat that the rotating speed of the wafer 2 of PROCESS FOR TREATMENT is higher, it is heated more even, and technology stability is stronger.Through actual production measuring and calculating, described in until the wafer 2 of PROCESS FOR TREATMENT when being fixedly installed on 11 place, holding section of wafer filler ring 1 of the present invention, described in treat the wafer 2 of PROCESS FOR TREATMENT turn scooter 2000 turns/min.When using wafer filler ring 1 of the present invention holder year to carry out PROCESS FOR TREATMENT until wafer 2 High Rotation Speed of PROCESS FOR TREATMENT, the lip temperature of described wafer 2 is consistent with the central temperature of described wafer 2.
Refer to Fig. 3, and Fig. 1 (a) ~ Fig. 1 (b), Fig. 2 (a) ~ Fig. 2 (b) is consulted in combination, Figure 3 shows that the structural representation of the reaction chamber with wafer filler ring of the present invention.The described reaction chamber 3 with wafer filler ring, comprising: reaction chamber body 31, arranges each functional part in described reaction chamber body 31; Filler ring carrier 32, described filler ring carrier 32 is towards base plate 33 place being arranged on described reaction chamber body 31; Wafer filler ring 1, wafer filler ring 1 is arranged on the side differing from base plate 33 of described filler ring carrier 32; Telescopic prop 34, described telescopic prop 34 is arranged on the base plate 33 of described reaction chamber body 11.
Apparently, when described insert described reaction chamber 3 until the wafer 2 of PROCESS FOR TREATMENT time, describedly treat the front that the front of the wafer 2 of PROCESS FOR TREATMENT is in the upper end open of wafer filler ring 1, described wafer relies on deadweight to be fixedly installed on holding section 11 place of described wafer filler ring 1.Treat that the heat that the wafer 2 of PROCESS FOR TREATMENT and the contact of wafer filler ring 1 cause scatters and disappears fast to reduce further, more preferably, described in treat PROCESS FOR TREATMENT wafer 2 only contact with described wafer filler ring 1 outside edge.
In sum, wafer filler ring of the present invention spatially shape is arranged, and by treating the holding section of the wafer of PROCESS FOR TREATMENT described in being formed to carry in described wafer filler ring, not only make described wafer only its outward flange contact with described wafer filler ring, reduce thermal loss to greatest extent, and stable fixing described wafer, improve the rotating speed of wafer process process, make it be heated evenly, technology stability is stronger.
Those skilled in the art all should be appreciated that, without departing from the spirit or scope of the present invention, can carry out various modifications and variations to the present invention.Thus, if when any amendment or modification fall in the protection range of appended claims and equivalent, think that these amendment and modification are contained in the present invention.
Claims (8)
1. a wafer filler ring, it is characterized in that, described wafer filler ring spatially shape is arranged, and treat that the area of the wafer of PROCESS FOR TREATMENT is less than the upper end open area of the wafer placing direction of described wafer filler ring, and treat the holding section of the wafer of PROCESS FOR TREATMENT described in being formed to carry in described wafer filler ring.
2. wafer filler ring as claimed in claim 1, is characterized in that, the holding section of described wafer filler ring is tightened up form by being formed gradual change on wafer placing direction.
3. wafer filler ring as claimed in claim 1, it is characterized in that, described wafer filler ring is bowl-shape setting.
4. wafer filler ring as claimed in claim 1, it is characterized in that, when the described wafer until PROCESS FOR TREATMENT inserts described wafer filler ring, describedly treat the front that the front of the wafer of PROCESS FOR TREATMENT is in the upper end open of wafer filler ring, described wafer relies on deadweight to be fixedly installed on the holding section place of described wafer filler ring.
5. wafer filler ring as claimed in claim 1, is characterized in that, described in treat PROCESS FOR TREATMENT wafer only contact with described wafer filler ring outside edge.
6. wafer filler ring as claimed in claim 1, is characterized in that, described in treat that the rotating speed of the wafer of PROCESS FOR TREATMENT is 2000 turns/min.
7. wafer filler ring as claimed in claim 1, it is characterized in that, the lip temperature of described wafer is consistent with the central temperature of described wafer.
8. there is a reaction chamber for wafer filler ring as claimed in claim 1, it is characterized in that, described in there is the reaction chamber of this wafer filler ring, comprising:
Reaction chamber body, inside arranges each functional part;
Filler ring carrier is towards the base plate place being arranged on described reaction chamber body;
Wafer filler ring, is arranged on the side differing from base plate of described filler ring carrier;
Telescopic prop, is arranged on the base plate of described reaction chamber body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610107767.3A CN105575800A (en) | 2016-02-26 | 2016-02-26 | Wafer support ring and reaction chamber with wafer support ring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610107767.3A CN105575800A (en) | 2016-02-26 | 2016-02-26 | Wafer support ring and reaction chamber with wafer support ring |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105575800A true CN105575800A (en) | 2016-05-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610107767.3A Pending CN105575800A (en) | 2016-02-26 | 2016-02-26 | Wafer support ring and reaction chamber with wafer support ring |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105575800A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107460451A (en) * | 2016-06-06 | 2017-12-12 | 应用材料公司 | Pose as center base heater |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030015141A1 (en) * | 2000-04-28 | 2003-01-23 | Yoji Takagi | Wafer supporting device in semiconductor manufacturing device |
| JP2006108677A (en) * | 2002-01-17 | 2006-04-20 | Hitachi Kokusai Electric Inc | Semiconductor manufacturing machine |
| CN101772836A (en) * | 2007-06-19 | 2010-07-07 | Memc电子材料有限公司 | The pedestal that is used to improve output and reduces wafer damage |
| US20120098100A1 (en) * | 2010-10-20 | 2012-04-26 | Siltronic Ag | Support Ring For Supporting A Semiconductor Wafer Composed Of Monocrystalline Silicon During A Thermal Treatment, Method For The Thermal Treatment of Such A Semiconductor Wafer, and Thermally Treated Semiconductor Wafer Composed of Monocrystalline Silicon |
-
2016
- 2016-02-26 CN CN201610107767.3A patent/CN105575800A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030015141A1 (en) * | 2000-04-28 | 2003-01-23 | Yoji Takagi | Wafer supporting device in semiconductor manufacturing device |
| JP2006108677A (en) * | 2002-01-17 | 2006-04-20 | Hitachi Kokusai Electric Inc | Semiconductor manufacturing machine |
| CN101772836A (en) * | 2007-06-19 | 2010-07-07 | Memc电子材料有限公司 | The pedestal that is used to improve output and reduces wafer damage |
| US20120098100A1 (en) * | 2010-10-20 | 2012-04-26 | Siltronic Ag | Support Ring For Supporting A Semiconductor Wafer Composed Of Monocrystalline Silicon During A Thermal Treatment, Method For The Thermal Treatment of Such A Semiconductor Wafer, and Thermally Treated Semiconductor Wafer Composed of Monocrystalline Silicon |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107460451A (en) * | 2016-06-06 | 2017-12-12 | 应用材料公司 | Pose as center base heater |
| CN107460451B (en) * | 2016-06-06 | 2021-07-06 | 应用材料公司 | Self-centering base heater |
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| C06 | Publication | ||
| PB01 | Publication | ||
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160511 |
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| RJ01 | Rejection of invention patent application after publication |