CN105575791A - Chemical Mechanical Polishing Process - Google Patents
Chemical Mechanical Polishing Process Download PDFInfo
- Publication number
- CN105575791A CN105575791A CN201410529394.XA CN201410529394A CN105575791A CN 105575791 A CN105575791 A CN 105575791A CN 201410529394 A CN201410529394 A CN 201410529394A CN 105575791 A CN105575791 A CN 105575791A
- Authority
- CN
- China
- Prior art keywords
- grinding
- manufacture craft
- adjustment
- mill
- chip carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000126 substance Substances 0.000 title abstract description 7
- 238000007517 polishing process Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 claims abstract description 25
- 239000002002 slurry Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 8
- 239000006061 abrasive grain Substances 0.000 claims description 7
- 238000005498 polishing Methods 0.000 abstract 7
- 239000002245 particle Substances 0.000 abstract 1
- 238000007790 scraping Methods 0.000 abstract 1
- 238000012360 testing method Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 2
- 229940037003 alum Drugs 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000010458 rotten stone Substances 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a chemical mechanical polishing manufacturing process. First, a chemical mechanical polishing machine is provided, and the machine includes a polishing pad. Then, a warm-up step is performed, wherein the warm-up step includes providing a polishing slurry and performing a polishing particle scraping action on the polishing pad by using a polishing device. Then, a grinding step is performed to grind a product wafer.
Description
Technical field
The present invention relates to a kind of cmp (chemicalmechanicalpolishing, CMP) manufacture craft.
Background technology
In semiconductor fabrication process, cmp (CMP) technology is the most generally used at present, is also most important a kind of planarization simultaneously.Generally speaking, CMP technology utilizes suitable ground slurry and the mode of mechanical lapping, remove the target thin rete (targetthinfilm) semiconductor chip with irregular surface equably, the smooth and surface of regular (regularandplanar) can be had to make semiconductor chip after CMP process.Wherein, ground slurry is generally made up of chemical assistant and grinding powder, and chemical assistant may be pH value buffer, oxidant or interfacial agent etc., may be then the composition such as tripoli or alum clay as grinding powder.By the chemical reaction that chemical assistant provides, and the mechanical lapping effect of grinding powder and producing between wafer and grinding pad, can effectively planarization wafer surface.
Existing cmp manufacture craft usually first can carry out parameter testing to a testing wafer (dummywafer) before grinding actual product wafer; such as, strike off the abrasive grains on grinding pad surface while testing wafer being ground with grinding knife, wait obtain some close to the grinding environment needed for actual product wafer after just can grind actual product wafer.But use test wafer obtains grinding environment not only increases manufacture craft cost, easily again in process of lapping, on grinding pad, affect the grinding of subsequent product wafer because portion of residual thing drops.Therefore how to improve existing CMP manufacture craft and be an important topic now.
Summary of the invention
For solving the problem, the preferred embodiment of the present invention is open a kind of cmp manufacture craft.First provide a work-table of chemicomechanical grinding mill, and this board comprises a grinding pad.Then carry out a warming-up step, wherein this warming-up step comprises provides a ground slurry and utilizes a mill to carry out striking off the action of abrasive grains to this grinding pad.Carry out a grinding steps afterwards again and grind a product wafer.
Accompanying drawing explanation
Fig. 1 is the schematic perspective view of the cmp manufacture craft of the preferred embodiment of the present invention;
Fig. 2 is the floor map of the cmp manufacture craft of the preferred embodiment of the present invention.
Symbol description
12 grinding pad 14 mills
16 chip carrier 18 grinding plates
20 grinding tool arm 22 grinding knifes
24 grinding head 26 feed pipes
28 ground slurries
Embodiment
Please refer to Fig. 1 to Fig. 2, Fig. 1 is the schematic perspective view of a cmp manufacture craft of the preferred embodiment of the present invention, and Fig. 2 is then the floor map of the cmp manufacture craft of the preferred embodiment of the present invention.As Figure 1-Figure 2, first one grinding pad 12, mill 14 and a chip carrier 16 be provided, wherein grinding pad 12 is preferably disposed on a grinding plate (platen) 18, mill 14 comprises grinding tool arm 20 and a grinding knife 22, and the tail end of chip carrier 16 then has a grinding head 24.Grinding pad 12 side is separately provided with a feed pipe (slurryfeed) 26 provides ground slurry 28 to grinding pad 12 in process of lapping.
In general chemical mechanical planarization process, a wafer is preferably fixed on grinding pad by chip carrier 16 in a detachable fashion, and wherein wafer can be a testing wafer or actual product wafer, and it is manufactured with the integrated circuit components such as semiconductor.Then provide a downforce to chip carrier 16, wafer is contacted with grinding pad 12, and by feed pipe 26 ground slurry 28 passed into carry out a grinding manufacture craft to grinding pad 12.Mill 14 utilizes the grinding downforce of tool arm 20 and the rotation of grinding knife 22 attachment or the abrasive grains that is jammed in grinding pad 12 surface to be struck off in process of lapping, avoids the efficiency of the abrasive grains impact grinding blocked.
In the present embodiment, preferably after powering and directly strike off the action of abrasive grains when not using any testing wafer when carrying out warming-up with mill 14 pairs of grinding pads 12, and selectivity adjusts at least one abrasive parameters to obtain a grinding formula (recipe) in mill 14 with the process of grinding pad 12 interaction in the present invention.Afterwards again by acquired grinding formula to being applied to an actual product wafer.In addition, in another embodiment of the invention, except carrying out except scraper action with mill 14 pairs of grinding pads 12 during warming-up, the grinding head 24 of chip carrier 16 also grinds with grinding pad 12 when non-bearing wafer.
More specifically, the action that the present embodiment adjusts at least one abrasive parameters can comprise the action of the action of adjustment grinding pad 12, the action of mill 14, the action of chip carrier 16 and supply ground slurry 28, and the thinner portion of action wherein adjusting this three comprises the rotating speed of adjustment grinding pad 12, the downforce of grinding tool arm 20 of adjustment mill 14, the rotating speed of the grinding knife 22 of adjustment mill 14, the downforce of adjustment chip carrier 16, the rotating speed of the grinding head 24 of adjustment chip carrier 16 and adjustment and is supplied to the various parameters such as ground slurry 28 flow of grinding pad 12.Should be noted, the present invention is the flow of selectivity adjustment grinding pad 12, chip carrier 16 and/or ground slurry 28 while adjustment mill action preferably, the action wherein adjusting grinding pad 12, mill 14, chip carrier 16 and ground slurry 28 flow is not limited to a kind of parameter or whole parameter, and visual manufacture craft demand selects any combination in relevant parameter to adjust.For example, the visual manufacture craft demand of the present embodiment is in the action of adjustment mill 14, comprise the downforce of grinding tool arm 20 of adjustment mill 14 and/or the rotating speed outer selectivity adjustment grinding pad 12 of the grinding knife 22 of mill 14, a kind of parameter in chip carrier 16 and ground slurry 28 flow, such as only adjust the rotating speed of grinding pad 12, the rotating speed of the grinding head 24 of chip carrier 16, the downforce of chip carrier 16, or adjust two or more parameters simultaneously, such as adjust the downforce of chip carrier 16 and the flow of ground slurry 28 simultaneously, adjust the rotating speed of grinding head 24 and the flow of ground slurry 28 of chip carrier 16 simultaneously, adjust the rotating speed of grinding pad 12 even simultaneously, the downforce of chip carrier 16, all parameters such as the rotating speed of the grinding head 24 of chip carrier 16 and ground slurry 28 flow being supplied to grinding pad 12.
In the present embodiment, after the abrasive parameters combination adjusted needed for above-mentioned selection, it is a grinding formula that the present invention preferably converges whole with the combination of selected abrasive parameters, and then grinds formula with this and be applied to an actual product wafer.Generally speaking, because the present invention does not preferably use the action of directly with mill, grinding pad being struck off to abrasive grains when any testing wafer when carrying out a warming-up step, and alternative other abrasive parameters of collocation adjustment obtain a grinding formula and then directly grind product wafer, so significantly can reduce because the cost spent by use test wafer and use test wafer affect the shortcoming that grinding pad brings, and then promote the efficiency of whole CMP manufacture craft.
The foregoing is only the preferred embodiments of the present invention, all equalizations done according to the claims in the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (9)
1. a cmp manufacture craft, comprises:
There is provided a work-table of chemicomechanical grinding mill, this work-table of chemicomechanical grinding mill comprises a grinding pad;
Carry out a warming-up step, this warming-up step comprises to be provided a ground slurry and utilizes a mill to carry out striking off the action of abrasive grains to this grinding pad; And
Carry out a grinding steps and grind a product wafer.
2. cmp manufacture craft as claimed in claim 1, wherein this work-table of chemicomechanical grinding mill also comprises a chip carrier, and this warming-up step also comprises and utilizes the grinding head of this chip carrier directly to grind this grinding pad.
3. cmp manufacture craft as claimed in claim 2, the process of wherein carrying out this warming-up step comprises at least one abrasive parameters of adjustment to obtain a grinding formula (recipe), and utilizes this product wafer of this grinding formula grinding.
4. cmp manufacture craft as claimed in claim 3, the step wherein adjusting at least one abrasive parameters comprises this ground slurry flow of adjustment.
5. cmp manufacture craft as claimed in claim 3, the step wherein adjusting at least one abrasive parameters comprises the downforce of adjustment one chip carrier.
6. cmp manufacture craft as claimed in claim 3, the step wherein adjusting at least one abrasive parameters comprises the rotating speed of the grinding head of this chip carrier of adjustment.
7. cmp manufacture craft as claimed in claim 3, the step wherein adjusting at least one abrasive parameters comprises the rotating speed of this grinding pad of adjustment.
8. cmp manufacture craft as claimed in claim 3, the step wherein adjusting at least one abrasive parameters comprises the downforce of the grinding tool arm of this mill of adjustment.
9. cmp manufacture craft as claimed in claim 3, the step wherein adjusting at least one abrasive parameters comprises the rotating speed of the grinding knife of this mill of adjustment.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103133106A TWI565557B (en) | 2014-09-24 | 2014-09-24 | Chemical mechanical polishing process |
| TW103133106 | 2014-09-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105575791A true CN105575791A (en) | 2016-05-11 |
Family
ID=55885801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410529394.XA Pending CN105575791A (en) | 2014-09-24 | 2014-10-10 | Chemical Mechanical Polishing Process |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN105575791A (en) |
| TW (1) | TWI565557B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1053830A2 (en) * | 1999-05-19 | 2000-11-22 | Infineon Technologies North America Corp. | System for dispensing polishing liquid during chemical mechanical polishing of a semiconductor wafer |
| CN102528651A (en) * | 2010-12-21 | 2012-07-04 | 中国科学院微电子研究所 | Chemical mechanical polishing equipment and preheating method for same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200533465A (en) * | 2004-04-07 | 2005-10-16 | Ytc Technology Corp | Chemical mechanical polishing tool with outside pneumatic assembly |
| TWI289089B (en) * | 2005-01-19 | 2007-11-01 | United Microelectronics Corp | Method for improving HSS CMP performance |
-
2014
- 2014-09-24 TW TW103133106A patent/TWI565557B/en active
- 2014-10-10 CN CN201410529394.XA patent/CN105575791A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1053830A2 (en) * | 1999-05-19 | 2000-11-22 | Infineon Technologies North America Corp. | System for dispensing polishing liquid during chemical mechanical polishing of a semiconductor wafer |
| CN102528651A (en) * | 2010-12-21 | 2012-07-04 | 中国科学院微电子研究所 | Chemical mechanical polishing equipment and preheating method for same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201611945A (en) | 2016-04-01 |
| TWI565557B (en) | 2017-01-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160511 |