200533465 玖、發明說明 【發明所屬之技術領域】 本 '發明是有關於一種化學機械研磨機台，且特別是有關 於一種具外部控制式氣壓系統（〇utside Pneumatic Assembly; OPA)之化學機械研磨機台。 【先前技術】 隨著半導體製程技術的蓬勃發展，在電子元件短小輕薄 的趨勢下，不僅加快了積體電路之線寬尺寸微縮化的腳步， 也促使元件不斷地朝更高之積集度（Integration)的方向發 展。在製程技術進入深次微米世代後，為了使積體電路元件 獲得更高的積集度，對元件之待處理表面的平坦度要求也變 得更為嚴苛。 在所有平坦化技術中，化學機械研磨法是一種全面性^ =化（Gl〇bal Planarizati〇n)技術，可同時運用具有研磨性杂 質的機械式研磨與酸鹼溶液的化學式研磨兩種作用，移除曰£ 2表面的材質，讓晶圓表面達到全面性的平坦化，以利後與 溥膘沉積、或蝕刻等步驟之進行。由於全面性平坦化是多^ 二=線金屬化最基本的一個要求，且化學機械研磨製程為: :二達到全面性平坦化唯—最可行的方法，因此已廣泛力 用在現今的半導體製程中。 部八晴ί照第1圖’第1圖係繪示傳統化學機械研磨機台4 有圖。化學機械研磨機台100可例如為應用材㈣ q所提供之MIRRA化學機械研磨機台。在化學跑 200533465200533465 发明 Description of the invention [Technical field to which the invention belongs] The present invention relates to a chemical mechanical polishing machine, and in particular to a chemical mechanical polishing machine with an externally controlled pneumatic system (〇utside Pneumatic Assembly; OPA) station. [Previous technology] With the vigorous development of semiconductor process technology, under the trend of short and thin electronic components, not only has the pace of miniaturization of the line width size of integrated circuits been accelerated, but it has also promoted the components to continue to move toward higher accumulation levels ( Integration). After the process technology entered the deep sub-micron generation, in order to obtain a higher degree of integration for integrated circuit components, the flatness requirements of the surface to be processed of the components have become more stringent. Among all the flattening technologies, the chemical mechanical polishing method is a comprehensive technology (Globabal Planarizati) technology, which can simultaneously use mechanical polishing with abrasive impurities and chemical polishing of acid and alkali solutions. The material on the surface is removed to allow the wafer surface to be completely flattened, so as to facilitate subsequent steps such as deposition and etching. Because comprehensive planarization is the most basic requirement for multi-line metallization, and the chemical mechanical polishing process is: Second, comprehensive planarization is the most feasible method, so it has been widely used in today ’s semiconductor processes. in. The eighth part of the picture is shown in the first picture. The first picture shows the traditional chemical mechanical polishing machine 4 with pictures. The chemical mechanical polishing machine 100 may be, for example, a MIRRA chemical mechanical polishing machine provided by Applied Materials. Running in chemistry 200533465
研磨機台100中，研磨頭框架1〇4 A A 木1 υ4為十字型，如第2圖所示。 研磨頭框架1 04之四個分去立R τ欠 刀又口P下各接合有一研磨頭裝置，這 些研磨頭裝置分別包括上部氣壓 . l ^ 裝置（Upper Pneumatic Assembly ; UPA)l〇2、移動馬磕】 秒動馬達108、旋轉馬達1〇6、以及 研磨頭110。其中，這四個上邦气网 们上邛虱壓裝置102分別位於研磨 頭框架Η)4之四個分支部的内部。而研磨頭框架1〇4外更包 覆有-外蓋（未㈣），以隔開研磨職架1G4與反應室之環 境。在化學機械研磨機台100中，研磨頭框架104隨著製程 需求旋轉，旋轉角度最大可達270。。研磨頭110下方為研 磨平台112,待處理之晶圓位於研磨頭11〇與研磨平台112 =間。此外，移動馬達⑽係用以提供移動研磨頭110之能 罝’旋轉馬it 106則係用以提供研磨里員11〇旋轉之能量。 另外，上部氣壓裝置102至少包括薄膜模組ιΐ6、内管 模組124、固定環模組122、旋轉組118以及控制板12〇。 薄膜模組116、时模組124、以及固定環模组122均具有 連接線路’這些連接線路穿過研磨頭框架1〇4上方之控制箱 m的-個開孔而連接至控制箱114之控制單元（未繪工示卜 由於每一個上部氣壓裝置102與控制箱114之間的連接 線路相當多，而所有之上部氣壓裝£ 1〇2與控制箱ιΐ4之間 的連接線路均穿過控制帛114之同一開孔，因此控制箱ιΐ4 之此-開孔將顯得相當擁擠。如此一來，於化學機械研磨機 台運轉時，這些連接線路所產生之熱難以散逸，再加上這些 連接線路大都很細’因而造成連接線路產生短路或斷路。一 其次，由於研磨頭框架104在製程期間會進行旋轉，因 200533465 此位於研磨頭框架1 〇 4咖^ 木04内部之上部氣壓裝置102亦會隨之旋 轉，進而帶動連接線路$ _ 之轉動。而每一次之轉動，均會使連 接線路產生凹折。經過一 ^ ^ 段時間之轉動後，連接線路將會斷 裂，而產生接觸不良之4主 良< h形。如此一來，連接線路的斷裂或In the polishing machine 100, the polishing head frame 104A A wood 1 υ4 has a cross shape, as shown in FIG. 2. The four heads of the grinding head frame 104 are separated by R τ under the knife and a grinding head device is respectively connected under the mouth P. These grinding head devices respectively include upper air pressure. L ^ Device (Upper Pneumatic Assembly; UPA) 102, moving磕】 The second motor 108, the rotary motor 106, and the grinding head 110. Among these, the four Shangbang gas nets lice pressure devices 102 are located inside the four branches of the grinding head frame Η) 4, respectively. The outer surface of the grinding head frame 104 is covered with an outer cover (not covered) to separate the environment of the grinding station 1G4 from the reaction chamber. In the chemical mechanical polishing machine 100, the polishing head frame 104 is rotated according to the process requirements, and the maximum rotation angle is 270. . Below the grinding head 110 is a grinding table 112. The wafer to be processed is located between the grinding head 110 and the grinding table 112 =. In addition, the moving motor ⑽ is used to provide the ability to move the grinding head 110. The rotating horse it 106 is used to provide the energy of the grinder 110 to rotate. In addition, the upper air pressure device 102 includes at least a membrane module 6, an inner tube module 124, a fixed ring module 122, a rotation group 118, and a control board 120. The film module 116, the time module 124, and the fixed ring module 122 all have connection lines. These connection lines pass through an opening in the control box m above the grinding head frame 104 and are connected to the control of the control box 114. Unit (not shown) Because there are quite a lot of connection lines between each of the upper air pressure device 102 and the control box 114, all the connection lines between the upper air pressure device 102 and the control box 4 pass through the control. The same opening of 114, so the control box ιΐ4-the opening will look quite crowded. In this way, when the chemical mechanical grinding machine is running, the heat generated by these connection lines is difficult to dissipate, plus most of these connection lines Very thin, resulting in a short circuit or an open circuit in the connection line. Secondly, because the grinding head frame 104 will rotate during the manufacturing process, the 200533465, which is located above the inside of the grinding head frame 104, ^ wooden 04, will also follow The rotation causes the connection line $ _ to rotate. Each rotation will cause a concave fold of the connection line. After a ^ ^ period of rotation, the connection line will Fracture, and the contact failure of the main good 4 < h-shaped way, break or connection lines.
接觸不良，均會影塑V # A P ’、曰上4虱壓裝置W2之出氣控制，而引發 製程的不穩定。 再者，於上部氣壓裝置102之預防維護（Preventive ntenance ’ PM)¥ ’需先開啟製程反應室，再打開研磨頭 杧木104外之外盍，然後開啟研磨頭框架1 ，才能進行檢 修與維4 ’相當繁瑣而麻煩。此外，開啟製程反應室會導致 外界微粒Θ木反應室，且研磨頭框架工〇4及其外蓋之開啟， 附著之研磨4粉塵也會造成反應室之污染。如此，均會對製 程反應室之潔淨度造成衝擊，進而導致製程可靠度與產品良 率的下降。 更進-步而言，由於上部氣壓m〇2係位於化學機械 研磨機台1〇〇之反應室中’且包覆於研磨頭框帛1〇4外之外 蓋並非完全密封，因此反應室内之濕氣無可避免地會進入研 磨頭框架104巾。如此一來，上部氣壓裝置i〇2 f因受潮而 、&此’甚至無法有效運轉，而嚴重影響製程之進行。 【發明内容】 /因此，本發明之目的就是在提供一種具外部控制式氣壓 糸統之化學機械研磨機台，其係將化學機械研磨機台之複數 個研磨頭上方之十字框架中的上部氣壓裝置從十字框架中 200533465 移至外部控制式氣壓系統中。如此一來，可避免十字框架在 旋轉時，導致各上部氣壓裝置連接至控制箱之線路因摩擦而 生熱，進而可防止連接之線路產生短路。 本發明之另一目的是在提供一種具外部控制式氣壓系 統之化學機械研磨機台，係將各研磨頭上方之上部氣壓褽置 移出，而使上部氣壓裝置從動件變成非動件。如此一來，各 上部氣壓裝置連接至控制箱之線路不會隨十字框架之轉動 而移動。因此，可避免上部氣壓裝置之連接線路因來回移動 所產生之凹折而斷掉。 本發明之又一目的是在提供一種具外部控制式氣壓系 統之化學機械研磨機台，由於各研磨頭上方之上部氣壓裝置 移出濕氣較重之化學機械研磨反應室，因此可防止上部氣壓 裝置之元件因受潮而失效或損壞。 本毛明之再一目的是在提供一種具外部控制式氣 統之化學機械研磨機台，由於原先位於各研磨頭上方之上部 氧壓裝置移出化學機械研磨反應室，而於化學機械研磨反應 室外構成外部控制式氣壓系統。因此，預防維護時，無須打 開化學機械研磨反應室盥十字 胳， 王一卞子框架及其外蓋，而可避免研磨 水粉塵與外界微粒污染 . 卞汉應至。無淪在維護或者元件更換 上，均較為簡易。 狄 〜捉饵一種具外部控制式氣壓 竹之化學機械研磨機台，至少包括：研磨頭框架位於化學 :研磨反應室中;複數個研磨頭裝置接合在上述研磨頭框 下方’外部控制式氣壓系統位於化學機械研磨反應室之 200533465 /匕外冑㈣ < 氣壓系統至少包括複數個上部氣壓裝 卜 這二上σ卩氣壓裝置分別對應於上述之研磨頭裝置，且 母一2上部氣壓裝置至少包括複數個連接線路以及複數個 、接g路，以及一控制箱，其中每一個上部氣壓裝置之連接 線路與控制箱連接，且每—個上部氣壓裝置 與對應之研磨頭裝置連接。 口依照本發明一較佳實施例，研磨頭框架可為十字型框 架，且對應於十字型框架之使用，研磨頭裝置之數量為四個。 由於各個研磨頭裝置之上部氣壓裝置從研磨頭框架中 鲁 移出，而集中形成外部控制式氣壓系統。因此，上部氣壓裝 置可k原先之動件轉變成非動件，而避免上部氣壓裝置與控 制箱之間的連接線路隨研磨頭框架之轉動而移動。如此一 來可防止連接線路因來回凹折而產生斷路，更可避免連接 線路因過分集中而散熱不易。此外，由於上部氣壓裝置均移 出化學機械研磨反應室，因此預防維護與元件更換均更為容 易。 【實施方式】 本發明揭露一種具外部控制式氣壓系統之化學機械研 磨機台，可大幅降低研磨頭裝置之上部氣壓裝置與控制箱之 間的連接線路斷路的可能性。為了使本發明之敘述更加詳盡 與元備’可參照下列描述並配合第3圖之圖示。 請參照第3圖，第3圖係繪示依照本發明一較佳實施例 的一種化學機械研磨機台之部分示意圖。化學機械研磨機台 9 200533465 之化學機械研磨的反應室2〇〇中具有研磨頭框架其 :磨頭框架222可具有多個分支部。在本發明之較佳實施 中，所採用之化學機械研磨機台為應用材料股份有限〜 提，之MIRRA化學機械研磨機台，且研磨頭框架可如 + β在mirra彡統之研磨機台 中，係採用旋轉式架構，旋轉角度可高達270。，具有四個 研磨頭裝置而分別接合在十字型框架的四個分支部上，告： 中三個研磨頭裝置進行研磨製程時，第四個研磨頭裝置^ 責晶圓的傳遞。因此，在本發明之較佳實施例中，研框 架222具有四個分支部’且研磨頭裝置2〇4之數量為四個而 分別裝設在研磨頭框架222的四個分支部下方。然應該注 意的-點是，本發明之研磨頭框架2 2 2之分支部數量亦可^、 於四個或大於四個，並不限於以上所述。 每-個研磨頭裝置2〇4至少包括旋轉馬達21〇、移動馬 達208、旋轉組206、以及研磨頭212’其中旋轉組 設於研磨頭«222中，且研磨頭212裝設在旋轉組取 之-端上。旋轉馬達210係用以控制研磨頭212之旋轉，移 動馬達2 0 8係用以控制研磨頭2 1 2之移動 本發明之化學機械研磨機台更具有外部控制式氣壓系 統202’其中外部控制式氣壓系統2()2更具有數量對應於研 磨頭裝置204之數量的上部氣壓裝置214。也就是說，在本 發明之較佳實施例中’研磨頭裳置2〇4有四個，則 裝置214之數量就有四個，每 母個研磨碩裝置204分別對應 於一個上部氣壓農置214’藉以用來控制研磨頭裝置204 : 10 200533465 出氣。每-個上部氣壓裝置214至少包括内管模組2i6、固 定環模組218、以及薄膜模組跡外部控制式氣壓系統搬 具有多條連接線路226,而連接至化學機械研磨機台之控制 箱228’其中每—個上部氣壓裝置214之連接線路226可例 如至少包括一條研磨頭氮氣線路、二條研磨頭真空線路、以 及二條研磨頭控制線路。也就是說，在此較佳實施例中，外 部控制式氣壓系統2〇2共具有四條研磨頭氮氣線路、八條研 磨頭真空線路、以及八條研磨頭控制線路。在本發明中，這 些研磨頭真空線路中有四條係分別隸屬於每一個上部氣壓 裝置214之薄膜模組22〇’而這些研磨頭真空線路中之其餘 四條則係分別隸屬於每一個上部氣壓裝置214之内管模組 216與固定環模組218。此外，外部控制式氣壓系統2〇2更 具有多條連接至研磨頭裝置2〇4之研磨組2〇6的連接管路 224。在此較佳實施例中，每一個上部氣壓裝置214均具有 三條連接管路224，而整個外部控制式氣壓系統2〇2共具有 十二條連接管路224。每一個上部氣壓裝置214較佳係^獨 立真空裝置（未繪示）連接。 、 本發明之一特徵就是將原先位於化學機械研磨之反應 室=〇〇中的研磨頭框架222内的上部氣壓裝置214，移出2 應室200,並將這些上部氣壓裝置214於反應室2〇〇外另外 組設成外部控制式氣壓系統202。如此一來，上部氣壓襞置 214就從原先之動件而變成非動件，亦即上部氣壓裝置 不Τ隨著研磨頭框架222之轉動而產生移動。於是，上部氣 C衣置2 1 4與控制箱228之間的連接線路226也就不會隨研 11 200533465 ^頭框架222之轉動而移動，也不會因此而受到凹折。因 ^可有效防止連接線路226因移動凹折而形成斷路。 此外，雖然外部控制式氣壓系統2〇2與研磨頭裝置2⑽ 之間2有連接管路224連接彼此，然由於連接管路224大都 由軟管所構成’因此隨研磨頭裝f 2〇4之轉動而牽動連接管 路224時，非常不容易使連接管路224產生斷裂之情形。 由上述本發明較佳實施例可知，本發明之—優點就是因 二f原先位於化學機械研磨機台之研磨頭框架中的上部氣 壓裝置從研磨頭框架中移至外部控制式氣廢系 '統中。因此、， 可，免研磨頭框架在旋轉時，導致各上部氣壓裝置連接至控 制箱之連接線路因摩擦而生熱。而且，由於大多數之連㈣ 路從控制箱預設之開孔退出，而不通過此預設開孔來進入控 7箱’因此可避免因|接線路過度擁塞於此預設開孔中，而 ^成政’、’、不易：^此—來’可達到防止連接線路因過熱而毀 損並產生短路的目的。 由上述本發明較佳實施例可知，本發明之另一優點就是 因為各研磨頭上方之上部氣壓裝置移出研磨頭框架，而使上 部氣壓裝置從動件變成非料。因此，各上部氣㈣置連接 至控制孝I之連接、線路不會隨研磨頭框架之#㈣受到牵 H可避免上部氣壓裝置與控制箱之間的連接線路因來 回移動而產生凹折，甚而斷掉。 、由上述本發明較佳實施例可知，本發明之又一優點就是 口為各研磨頭上方之上部氣壓裝置移出濕氣較重之化學機 械研磨反應室，因此可防止上部氣壓裝置之元件因受潮而失 12 200533465 效或損壞。於是，可達到延長上部氣壓裝置之使用壽命的目 的。 由上述本發明較佳實施例可知，本發明之再一優點就是 因為原先位於各研磨頭上方之上部氣麼裝置移出化學機械 研磨反應室。因此，進行上部氣a裝置之預防維護時，無須 打開化學機械研磨反應室與研磨頭框架及其外蓋，而可避免 研磨漿粉塵與外界微粒㈣反應室。於是，無論在維護或者 凡件更換上，均較為簡易。 雖然本發明已以一較佳竇妳姒袓+ ,， 平乂住貫轭例揭露如上，然其並非用以 限定本發日月’任何熟習此技#者’在殘離本發明之精神和 =内，當可作各種之更動與潤飾，因此本發明L圍 备視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 第1圖係繪示傳統化學機姑 卜 予钺槭研磨機台之部分示意圖 第2圖係繪示研磨頭框架之上示圖。 第3圖係繪示依日g太蘇Poor contact will affect the outgas control of V # A P ′ and the upper 4 lice pressure device W2, which will cause the instability of the process. Furthermore, in the preventive maintenance of the upper air pressure device 102 (PM) ¥ ', it is necessary to open the process reaction chamber first, then open the outside of the grinding head torch 104, and then open the grinding head frame 1 for inspection and maintenance. 4 'Quite tedious and troublesome. In addition, opening the process reaction chamber will cause external particles Θ wood reaction chamber, and the opening of the grinding head frame worker 04 and its cover, and the attached grinding 4 dust will also cause pollution of the reaction chamber. In this way, the cleanliness of the process reaction chamber will be impacted, which will lead to a decrease in process reliability and product yield. Furthermore, since the upper air pressure m2 is located in the reaction chamber of the chemical mechanical polishing machine 100, and the outer cover covering the grinding head frame 104 is not completely sealed, the reaction chamber is not completely sealed. The moisture will inevitably enter the abrasive head frame 104. In this way, the upper air pressure device i02f cannot be effectively operated due to moisture, which seriously affects the progress of the process. [Summary of the Invention] / Therefore, the purpose of the present invention is to provide a chemical mechanical polishing machine with an externally controlled air pressure system, which is an upper pressure in a cross frame above a plurality of grinding heads of the chemical mechanical polishing machine. The device was moved from the cross frame 200533465 to an externally controlled pneumatic system. In this way, when the cross frame is rotated, the lines connected to the control box by the upper pneumatic device can be prevented from generating heat due to friction, and the connected lines can be prevented from short-circuiting. Another object of the present invention is to provide a chemical mechanical polishing machine with an externally controlled air pressure system, which removes the upper air pressure from the upper part of each grinding head, so that the upper air pressure device driven part becomes a non-moving part. In this way, the lines connecting the upper pneumatic devices to the control box will not move with the rotation of the cross frame. Therefore, the connection of the upper pneumatic device can be prevented from being broken due to the concave folds caused by the back and forth movement. Another object of the present invention is to provide a chemical mechanical polishing machine with an externally controlled pneumatic system. Since the upper pneumatic device above each polishing head removes the heavy chemical mechanical polishing reaction chamber, it can prevent the upper pneumatic device. Components have failed or become damaged due to moisture. Another objective of this book is to provide a chemical mechanical polishing machine with an externally controlled gas system. Since the oxygen pressure device originally located on the upper part of each polishing head was removed from the chemical mechanical polishing reaction chamber, it was constituted outside the chemical mechanical polishing reaction chamber. Externally controlled pneumatic system. Therefore, during preventive maintenance, it is not necessary to open the chemical mechanical grinding reaction chamber toilet cross, Wang Yizhang frame and its cover, and it can avoid grinding water dust and external particulate pollution. 卞 Han should come. It is relatively simple to maintain or replace components. Di ~ Catch a chemical mechanical grinding machine with externally controlled air pressure bamboo, at least including: a grinding head frame is located in a chemical: grinding reaction chamber; a plurality of grinding head devices are connected below the above grinding head frame; The 200533465 / dipper outer cylinder located in the chemical mechanical grinding reaction chamber < The air pressure system includes at least a plurality of upper air pressure devices. The two upper σ 卩 air pressure devices respectively correspond to the above-mentioned grinding head device, and the mother-1 upper air pressure device includes A plurality of connection lines and a plurality of connection lines, and a control box, wherein the connection line of each upper air pressure device is connected to the control box, and each upper air pressure device is connected to the corresponding grinding head device. According to a preferred embodiment of the present invention, the grinding head frame may be a cross-shaped frame, and corresponding to the use of the cross-shaped frame, the number of the grinding head devices is four. Since the upper air pressure device of each grinding head device is removed from the grinding head frame, an externally controlled air pressure system is formed collectively. Therefore, the upper air pressure device can transform the original moving parts into non-moving parts, and avoid the connection line between the upper air pressure device and the control box from moving with the rotation of the grinding head frame. In this way, the connection line can be prevented from being broken due to the back and forth folding, and the connection line can be prevented from dissipating heat due to excessive concentration. In addition, since the upper pneumatic device is removed from the chemical mechanical polishing reaction chamber, preventive maintenance and component replacement are easier. [Embodiment] The present invention discloses a chemical-mechanical grinding machine with an externally controlled pneumatic system, which can greatly reduce the possibility of disconnection of the connection line between the pneumatic device above the grinding head device and the control box. In order to make the description of the present invention more detailed and prepared, reference may be made to the following description and the illustration in FIG. 3. Please refer to FIG. 3, which is a schematic diagram showing a part of a chemical mechanical polishing machine according to a preferred embodiment of the present invention. Chemical-mechanical polishing machine 9 200533465 The chemical-mechanical polishing reaction chamber 2000 has a polishing head frame. The polishing head frame 222 may have a plurality of branch portions. In the preferred implementation of the present invention, the chemical mechanical polishing machine used is MIRRA chemical mechanical polishing machine with limited application material shares, and the grinding head frame can be as + β in the polishing machine of the Mirra system, The system adopts a rotary structure, and the rotation angle can reach 270. There are four polishing head devices that are respectively connected to the four branches of the cross-shaped frame. The fourth polishing head device is responsible for the wafer transfer when the three polishing head devices perform the polishing process. Therefore, in the preferred embodiment of the present invention, the grinding frame 222 has four branch portions', and the number of the grinding head devices 204 is four, which are respectively installed below the four branches of the grinding head frame 222. However, it should be noted that the number of branches of the grinding head frame 2 2 2 according to the present invention may be four or more, and is not limited to the above. Each of the grinding head devices 204 includes at least a rotation motor 21, a moving motor 208, a rotation group 206, and a grinding head 212 ', wherein the rotation group is provided in the grinding head «222, and the grinding head 212 is installed in the rotation group. Of it. The rotary motor 210 is used to control the rotation of the grinding head 212, and the mobile motor 208 is used to control the movement of the grinding head 2 1 2. The chemical mechanical polishing machine of the present invention has an externally controlled pneumatic system 202 ', of which the externally controlled The air pressure system 2 () 2 further has upper air pressure devices 214 in a number corresponding to the number of the grinding head devices 204. That is to say, in the preferred embodiment of the present invention, there are four grinding heads 304, and then the number of devices 214 is four. Each mother grinding device 204 corresponds to an upper air pressure farm. 214 'is used to control the grinding head device 204: 10 200533465. Each upper air pressure device 214 includes at least an inner tube module 2i6, a fixed ring module 218, and a thin film module. The externally controlled air pressure system has a plurality of connection lines 226, and is connected to the control box of the chemical mechanical polishing machine. 228 'wherein each of the connection lines 226 of the upper air pressure device 214 may include at least one grinding head nitrogen line, two grinding head vacuum lines, and two grinding head control lines. That is, in this preferred embodiment, the externally controlled pneumatic system 200 has four grinding head nitrogen lines, eight grinding head vacuum lines, and eight grinding head control lines. In the present invention, four of the grinding head vacuum circuits are separately attached to each of the upper air pressure devices 214 of the film module 22 ′, and the other four of the grinding head vacuum circuits are separately attached to each of the upper air pressure devices. 214 inner tube module 216 and fixed ring module 218. In addition, the externally controlled pneumatic system 200 has a plurality of connection lines 224 connected to the grinding group 206 of the grinding head device 204. In this preferred embodiment, each upper air pressure device 214 has three connection lines 224, and the entire externally controlled air pressure system 202 has a total of twelve connection lines 224. Each upper air pressure device 214 is preferably connected to an independent vacuum device (not shown). One feature of the present invention is to remove the upper air pressure device 214, which was originally located in the grinding head frame 222 in the reaction chamber of the chemical mechanical polishing, and remove the upper air pressure device 214 in the reaction room 2. 〇 Another group is set up as an externally controlled air pressure system 202. In this way, the upper air pressure setting 214 is changed from the original moving part to a non-moving part, that is, the upper air pressure device does not move as the grinding head frame 222 rotates. Therefore, the connection line 226 between the upper air jacket 2 2 4 and the control box 228 will not move with the rotation of the head frame 222, and it will not be concavely folded. Because ^ can effectively prevent the connection line 226 from being disconnected due to moving concave folds. In addition, although there is a connecting pipe 224 between the externally controlled pneumatic system 200 and the grinding head device 2⑽, most of the connecting pipes 224 are composed of hoses. When the connection pipe 224 is dragged by rotation, it is very difficult for the connection pipe 224 to break. It can be known from the above-mentioned preferred embodiments of the present invention that the advantage of the present invention is that the upper air pressure device originally located in the grinding head frame of the chemical mechanical grinding machine is moved from the grinding head frame to the externally controlled gas waste system. in. Therefore, it is possible that when the grinding head frame is rotated, the connection lines connecting the upper air pressure devices to the control box generate heat due to friction. Moreover, since most flail roads exit from the preset opening of the control box, and do not enter the control box 7 through this preset opening, it can avoid excessive congestion in the preset opening due to the connection line. And ^ Chengzheng ',', not easy: ^ This-come 'can prevent the connection line from being damaged due to overheating and short circuit. As can be seen from the above-mentioned preferred embodiments of the present invention, another advantage of the present invention is that the upper air pressure device above each grinding head is moved out of the grinding head frame, so that the upper air pressure device follower becomes unanticipated. Therefore, the connections between the upper air cylinders and the control unit are not pulled along with the # of the grinding head frame, which can prevent the connection lines between the upper air pressure device and the control box from being concave or even caused by the back and forth movement. Break. According to the above-mentioned preferred embodiments of the present invention, another advantage of the present invention is that the mouth is a chemical mechanical polishing reaction chamber that removes heavy moisture from the upper air pressure device above each grinding head, so that the components of the upper air pressure device can be protected from moisture Lost 12 200533465 is invalid or damaged. Therefore, the purpose of extending the service life of the upper pneumatic device can be achieved. It can be known from the above-mentioned preferred embodiments of the present invention that another advantage of the present invention is that the gas-air device originally located above the grinding heads is removed from the chemical mechanical grinding reaction chamber. Therefore, during the preventive maintenance of the upper gas a device, it is not necessary to open the chemical-mechanical grinding reaction chamber, the grinding head frame and its outer cover, and it is possible to avoid the grinding slurry dust and external particles from entering the reaction chamber. Therefore, it is easier to maintain or replace all parts. Although the present invention has been disclosed with a better example, as described above, it is not intended to limit the present day and month 'anyone who is familiar with this technique #' is to leave the spirit of the present invention and Inner, when various changes and retouching can be made, the L range of the present invention is subject to the definition of the scope of patent application attached. [Brief description of the figure] Figure 1 is a schematic diagram showing a part of a traditional chemical machine maple acer mill grinding machine. Figure 2 is a diagram above the grinding head frame. Figure 3 shows the Taisu
^ …枣务明一較佳實施例的一種化學 械研磨機台之部分示意圖。 102 :上部氣壓裝置 1 06 :旋轉馬達 110 ·研磨頭 Π4 :控制箱 【元件代表符號簡單說明】 100:化學機械研磨機台 104 :研磨頭框架 108 :移動馬達 11 2 :研磨平台 13 200533465 11 6 :薄膜模組 118 ： 旋轉組 120 :控制板 122 ： 固定環模組 124 :内管模組 200 ： 反應室 202 :外部控制式氣壓系統 204 :研磨頭裝置 206 ： 旋轉組 208 ·•移動馬達 210 ： 旋轉馬達 2 1 2 :研磨頭 214 ： 上部氣壓裝置 2 1 6 :内管模組 218 ： 固定壞核組 220 :薄膜模組 222 ： 研磨頭框架 224 ··連接管路 226 ： 連接線路 228 :控制箱 14^ ... A schematic diagram of a chemical grinding machine according to a preferred embodiment of the present invention. 102: Upper air pressure device 1 06: Rotary motor 110 · Grinding head Π4: Control box [Simplified description of component representative symbols] 100: Chemical mechanical polishing machine 104: Grinding head frame 108: Moving motor 11 2: Grinding platform 13 200533465 11 6 : Thin-film module 118: Rotary group 120: Control board 122: Fixed ring module 124: Inner tube module 200: Reaction chamber 202: Externally controlled pneumatic system 204: Grinding head device 206: Rotary group 208 · • Motor 210 : Rotary motor 2 1 2: Grinding head 214: Upper air pressure device 2 1 6: Inner tube module 218: Fixed bad core group 220: Membrane module 222: Grinding head frame 224 ·· Connection line 226: Connection line 228: Control box 14