CN105575785A - Method for forming gate structure - Google Patents
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- CN105575785A CN105575785A CN201410528399.0A CN201410528399A CN105575785A CN 105575785 A CN105575785 A CN 105575785A CN 201410528399 A CN201410528399 A CN 201410528399A CN 105575785 A CN105575785 A CN 105575785A
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Abstract
The invention provides a method for forming a gate structure, comprising the following steps: providing a substrate; forming a first oxide layer on the substrate; bombarding the first oxide layer with nitrogen ions to form a first nitride layer on the surface of the first oxide layer; carrying out thermal oxidation treatment on the substrate, the first oxide layer and the first nitride layer after the formation of the first nitride layer; and forming a gate on the first nitride layer. The method has the beneficial effect that the formation of a beak structure is avoided, the electrical property of the first oxide layer is stabilized, further electrical adjustment of the first oxide layer in the later period is facilitated, and the performance of the formed gate structure is enhanced.
Description
Technical field
The present invention relates to field of semiconductor manufacture, be specifically related to a kind of formation method of grid structure.
Background technology
The grid structure of semiconductor device generally includes grid and is located at the first oxide layer (grid oxide layer) between grid and substrate, and the performance of grid structure directly affects the electric property of whole semiconductor device.
But the performance of the grid structure formed in prior art is still not ideal enough, such as, the electrical instability of the first oxide layer in grid structure, or equivalent first oxidated layer thickness to change etc. and all can cause the degradation of grid structure.
Therefore, the electric property how promoting the grid structure of formation becomes those skilled in the art's technical problem urgently to be resolved hurrily.
Summary of the invention
The problem that the present invention solves is to provide a kind of formation method of grid structure to promote the performance of the grid structure formed.
For solving the problem, the invention provides a kind of formation method of grid structure, comprising:
Substrate is provided;
Form the first oxide layer over the substrate;
Adopt described first oxide layer of Nitrogen ion bombardment, to form the first nitride layer on described first oxide layer surface;
After described first nitride layer of formation, thermal oxidation is carried out to described substrate, the first oxide layer and the first nitride layer;
After the step of thermal oxidation, described first nitride layer forms grid.
Optionally, the step of substrate is provided to comprise: to provide silicon substrate;
The step forming the first oxide layer comprises: the first oxide layer forming earth silicon material;
The step forming the first nitride layer comprises: the first nitride layer forming silicon oxy-nitride material.
Optionally, the step forming the first oxide layer comprises:
Make the partial surface oxidation of substrate to form described first oxide layer.
Optionally, the step forming the first oxide layer comprises:
Make oxidizing temperature in the scope of 650 ~ 1000 degrees Celsius, oxygen flow is in the scope of 0.1 ~ 10 Standard Liters per Minute, and oxidization time is in the scope of 2 ~ 60 minutes.
Optionally, after forming the step of the first oxide layer, before forming the step of the first nitride layer, described formation method also comprises:
The second nitride layer is formed between described substrate and the first oxide layer.
Optionally, the step forming the second nitride layer comprises: second nitride layer of concentration in 2% ~ 10% scope forming nitrogen-atoms.
Optionally, by forming described second nitride layer to the mode of substrate surface thermal diffusion Nitrogen ion.
Optionally, adopt nitric oxide or nitrous oxide gas as the ion source of thermal diffusion Nitrogen ion.
Optionally, the step forming the first nitride layer comprises: make the concentration of nitrogen-atoms in the first nitride layer of formation in the scope of 10% ~ 25%.
Optionally, the step forming the first nitride layer comprises: adopt plasma generation device to produce described first oxide layer of Nitrogen ion bombardment, to form described first nitride layer, and make the power of plasma generation device in the scope of 200 ~ 1500 watts, described in plasma bombardment during the first oxide layer surrounding environment pressure in the scope of 5 ~ 5000 millitorrs, temperature in the scope of 23 ~ 500 degrees Celsius, the flow of nitrogen 5 ~ 1000 standard milliliters/minute scope in.
Optionally, the step of substrate, the first oxide layer and the first nitride layer being carried out to thermal oxidation comprises: make the temperature of thermal oxidation in the scope of 650 ~ 1050 degrees Celsius, the flow of the oxygen passed into is in the scope of 0.1 ~ 10 Standard Liters per Minute, and the time of thermal oxidation is in the scope of 5 ~ 3600 seconds.
Optionally, the step that substrate, the first oxide layer and the first nitride layer carry out thermal oxidation is also comprised: the surface relative with described first oxide layer at described substrate forms the second oxide layer.
Compared with prior art, technical scheme of the present invention has the following advantages:
It is the laminated construction of vertical direction between first oxide layer and grid, the sidewall of the first oxide layer exposes and then easily oxidized, and the sidewall sections of the first oxide layer is more easily oxidized relative to core, and then the sidewall that may form both sides is thicker, the beak structure that core is thinner;
The present invention bombards described first oxide layer described first oxide layer can be made on described first oxide layer surface to keep smooth to form the first nitride layer by Nitrogen ion, and then described beak fault of construction can be reduced, and, first nitride layer can suppress the oxidized degree of the first oxide layer to a certain extent, and then further suppress the formation of beak structure.
In addition, adopt described first oxide layer of Nitrogen ion bombardment with after becoming the first nitride layer, between the first oxide layer and substrate, and dangling bonds may be had very among the first nitride layer.Described dangling bonds easily combine with other foreign ions, this can upset the electrical of the first oxide layer and the first nitride layer, and the first oxide layer and the first nitride layer are electrically difficult to carry out corresponding electrically correcting process (because cannot know that the foreign ion that these dangling bonds specifically will be electrical with which kind of combines) in the later stage in multilated afterwards.The present invention is by carrying out thermal oxidation to described substrate, the first oxide layer and the first nitride layer, with these dangling bonds of passivation, these dangling bonds are namely made to be combined with oxonium ion, the electrical of described first oxide layer can be stablized like this, also facilitating the later stage carries out further electrically adjustment to the first oxide layer, thus improves the performance of the grid structure of formation.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of prior art grid structure;
Fig. 2 to Fig. 6 is the schematic diagram of each step in formation method one embodiment of grid structure of the present invention.
Embodiment
In the process of existing formation grid structure, the first oxide layer be formed between substrate and grid is easy to be subject to the impact of other techniques, and then causes the performance of whole grid structure to be affected.
With reference to the schematic diagram that Figure 1 shows that grid structure in prior art, owing between the first oxide layer and grid being the laminated construction of vertical direction, the sidewall of the first oxide layer exposes and then easily oxidized, and the sidewall of the first oxide layer is due to partly more easily oxidized relative to core, and then the sidewall that may form both sides is thicker, the beak structure that core is thinner.
For this reason, the invention provides a kind of formation method of grid structure, comprise the following steps:
Substrate is provided; Form the first oxide layer over the substrate; Adopt described first oxide layer of Nitrogen ion bombardment to form the first nitride layer on described first oxide layer surface; After described first nitride layer of formation, thermal oxidation is carried out to described substrate, the first oxide layer and the first nitride layer; Described first nitride layer forms grid.
Forming the first nitride layer by above-mentioned steps can make described first oxide layer keep smooth, and then described beak fault of construction can be reduced, further, the first nitride layer can suppress the oxidized degree of the first oxide layer to a certain extent, and then further suppress the formation of beak structure.
In addition, adopt described first oxide layer of Nitrogen ion bombardment with after becoming the first nitride layer, between the first oxide layer and substrate, and dangling bonds may be had very among the first nitride layer.Described dangling bonds easily combine with other foreign ions, this can upset the electrical of the first oxide layer and the first nitride layer, and the first oxide layer and the first nitride layer are electrically difficult to carry out corresponding electrically correcting process (because cannot know that the foreign ion that these dangling bonds specifically will be electrical with which kind of combines) in the later stage in multilated afterwards.The present invention is by carrying out thermal oxidation to described substrate, the first oxide layer and the first nitride layer, with these dangling bonds of passivation, these dangling bonds are namely made to be combined with oxonium ion, the electrical of described first oxide layer can be stablized like this, also facilitating the later stage carries out further electrically adjustment to the first oxide layer, thus improves the performance of the grid structure of formation.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail specific embodiments of the invention below in conjunction with accompanying drawing.
Fig. 2 to Fig. 6 is the schematic diagram of each step in formation method one embodiment of grid structure of the present invention.
The present embodiment is to form the floating gate structure (floatinggate) of flash device.But it should be noted that, formation method of the present invention can also be used for other semiconductor device, should not limit the present invention with this.
First with reference to figure 2, substrate 100 is provided.In the present embodiment, described substrate 100 is silicon substrate.
Described substrate 100 is formed the first oxide layer 200.Because the present embodiment forms flash device, described first oxide layer of formation i.e. the tunnel layer (tunneloxide) of flash device floating gate.
Meanwhile, because substrate in the present embodiment 100 is silicon substrate, described first oxide layer 200 is the first oxide layer of earth silicon material.
In the present embodiment, section substrate 100 can be made to be oxidized to form described first oxide layer 200.
Concrete, can be oxidized substrate 100, and then form described first oxide layer 200 on the surface of substrate 100.
In the present embodiment, can make oxidizing temperature in the scope of 650 ~ 1000 degrees Celsius, oxygen flow is in the scope of 0.1 ~ 10 Standard Liters per Minute, and oxidization time is in the scope of 2 ~ 60 minutes.But these parameters are only an example of the present embodiment, in practical operation, the flow of time of oxidation, temperature and oxygen should adjust according to actual conditions, and therefore the present invention is not construed as limiting this.
In addition, the present invention to how forming described first oxide layer 200 is not construed as limiting, and in other embodiments of the invention, described first oxide layer 200 also can be that deposited oxide material obtains on described substrate 100.
In conjunction with reference to figure 3, in the present embodiment, after described first oxide layer 200 of formation, before forming the step of the first nitride layer, further comprising the steps of:
The second nitride layer 210 is formed between described substrate 100 and the first oxide layer 200.Described second nitride layer 210 is mainly for improving the dielectric constant of tunnel layer, because the dielectric constant of nitride is generally higher than the dielectric constant of oxide, that can be done by tunnel layer to a certain extent like this is thinner, namely lower equivalence first oxidated layer thickness of tunnel layer, and then improve read or write speed and the data preservation of flash device.
Now, equivalence first oxidated layer thickness (EOT) of described tunnel layer is the thickness sum of the second nitride layer 210 and the first oxide layer 200, uses h
1represent.
If the concentration of nitrogen-atoms is too small, then effectively cannot promote the dielectric constant of tunnel layer, the concentration of nitrogen-atoms is excessive, can have influence on the electrical of flash device, and then affects read or write speed and the data preservation of flash device.Therefore, in the present embodiment, second nitride layer 210 of concentration in 2% ~ 10% scope of nitrogen-atoms is formed.
In the present embodiment, can by forming described second nitride layer 210 to the mode of substrate 100 surface heat diffusion Nitrogen ion, namely make Nitrogen ion infiltrate under uniform temperature condition intersection that the first oxide layer 200 arrives substrate 100 and the first oxide layer 200, and then react to form the second nitride layer 210 with substrate 100.
In the present embodiment, nitric oxide (NO) or nitrous oxide (N can be adopted
2o) gas is as the ion source of thermal diffusion Nitrogen ion, and then forms the second nitride layer 210 of silicon oxynitride (SiON) material.But the present invention to which kind of gas of employing is not construed as limiting as (nitrogen) ion source, and other gases with nitrogen element also can as the ion source of formation second nitride layer 210.
In the present embodiment, the step forming the second nitride layer 210 comprises:
Make the flow of nitric oxide or nitrous oxide gas in the scope of 0.5 ~ 10 Standard Liters per Minute, thermal diffusion time is in the scope of 5 ~ 60 minutes, and thermal diffusion temperature is in the scope of 750 ~ 1000 degrees Celsius.Be conducive to controlling to form second nitride layer 210 of nitrogen atom concentration in 2% ~ 10% scope in this parameter area.
But the present invention is not construed as limiting above-mentioned parameter, when practical operation, should adjust accordingly described parameter according to actual conditions.
After this, with reference to figure 4, adopt described first oxide layer 200 of Nitrogen ion bombardment, to form the first nitride layer 220 at described first oxide layer table 200.Described first nitride layer 220 can suppress the follow-up beak structure that may be formed in described first oxide layer 200, simultaneously, described in above, the dielectric constant of nitride is greater than the dielectric constant of oxide usually, it is thinner that described first nitride layer 220 is also conducive to tunnel layer to do to a certain extent, namely lower equivalence first oxidated layer thickness of tunnel layer, and then improve read or write speed and the data preservation of flash device.
Specifically, the reason that may form beak structure in the first oxide layer 200 is after follow-up formation grid (floating boom namely in the present embodiment), grid, it is the laminated construction of vertical direction arrangement between first oxide layer 200 and the first nitride layer 210, the sidewall of the first oxide layer 200 exposes, and then the oxygen atom that easily may exist in environment is combined and is oxidized further, and the sidewall sections of the first oxide layer is due to outside exposed, more easily oxidized relative to core, and then it is thicker probably to form both sides sidewall, the beak structure that core is thinner.
The first nitride layer 220 being formed at described first oxide layer 200 surface of the present invention can make described first oxide layer 200 keep smooth as far as possible, and then can suppress the formation of beak structure to a certain extent; On the other hand, the first nitride layer 220 can suppress the oxidized degree of the first oxide layer 200 to a certain extent, and then further suppress the formation of beak structure.
In the present embodiment, the first nitride layer 220 of silicon oxy-nitride material can be formed.
If the concentration of nitrogen-atoms is too small, then effectively cannot promote the dielectric constant of tunnel layer, the concentration of nitrogen-atoms is excessive, can have influence on the electrical of flash device, and then affects read or write speed and the data preservation of flash device.Therefore, in the present embodiment, can make the concentration of the nitrogen-atoms in the first nitride layer 220 of formation in the scope of 10% ~ 25%.
Plasma generation device can be adopted in the present embodiment to produce described first oxide layer of Nitrogen ion bombardment, to form described first nitride layer, and make the power of plasma generation device in the scope of 200 ~ 1500 watts, described in plasma bombardment during the first oxide layer surrounding environment pressure in the scope of 5 ~ 5000 millitorrs, temperature in the scope of 23 ~ 500 degrees Celsius, the flow of nitrogen 5 ~ 1000 standard milliliters/minute scope in.Make parameter be positioned at above number range be conducive to being formed above-mentioned nitrogen atom concentration 10% ~ 25% the first nitride layer 220.
But the present invention is not construed as limiting above-mentioned parameter, when practical operation, should adjust accordingly above-mentioned parameter according to actual conditions.
After described first nitride layer 220 of formation, equivalence first oxidated layer thickness of tunnel layer is the thickness sum of the first nitride layer 220, first oxide layer 200 and the second nitride layer 210, uses h
2represent.
With reference to figure 5, after described first nitride layer 220 of formation, thermal oxidation is carried out to described substrate 100, first oxide layer 200 (the present embodiment also comprises the second nitride layer 210) and the first nitride layer 220, with the dangling bonds described in passivation between the first oxide layer 200 and substrate 100, and first dangling bonds in nitride layer 220, and form the second oxide layer 110 at described substrate 100 relative to the surface of described first oxide layer 200.
For passivation dangling bonds: thermal oxidation is conducive to making the electric property of the tunnel layer be made up of the first nitride layer 220, first oxide layer 200 and the second nitride layer 210 more stable, and its reason is:
Dangling bonds may be had between first oxide layer 200 and substrate 100, specifically, owing to being also formed with the second nitride layer 210 between the first oxide layer 200 and substrate 100 in the present embodiment, so dangling bonds are specifically present between the second nitride layer 210 and substrate 100 and between the second nitride layer 210 and the first oxide layer 200 in the present embodiment.In other embodiments, such as, when not forming the second nitride layer 210 in the present embodiment, described dangling bonds are just formed between described first oxide layer 200 and substrate 100.
Simultaneously, also the chemical bond that some disconnect may be there is in described first nitride layer 220, the dangling bonds (N key dangling bonds) of some Nitrogen ion disconnected specifically, these dangling bonds (trap) are easy to combine with some foreign ions, this can upset the electrical of the first oxide layer 200 and the first nitride layer 220, and the first oxide layer 200 and the first nitride layer 220 are electrically difficult to carry out corresponding electrically correcting process (such as in the later stage in multilated afterwards, by adulterating, some specific ion-select electrode are electrical), because cannot know that the foreign ion that these dangling bonds specifically will be electrical with which kind of combines.
By contrast, the present invention is present in the dangling bonds between the first oxide layer 200 and substrate 100 and the dangling bonds in the first nitride layer 220 by thermal oxidation passivation, that is, dangling bonds are combined with oxonium ion, be conducive to stablizing the electrical of described first oxide layer 200 and the first nitride layer 220 like this, also facilitating the later stage carries out further electrically adjustment to the first oxide layer, thus improves the performance of the grid structure of formation.
The reason producing described dangling bonds please refer to shown in Fig. 6, transverse axis in Fig. 5 from left to right represent successively on described substrate 100, form the first oxide layer 200 step (A), form the first nitride layer 220 (B) and described substrate 100, first oxide layer 200 and the first nitride layer 220 carried out to the step (C) of thermal oxidation, cylindricality Figure 10 in Fig. 6 represents the density (DIT, densityofinterfacetrap) of the trap in A, B, C tri-steps.Can find out, after the step through formation first nitride layer 220, DIT quantity promotes, trace it to its cause and may be owing to adopting Nitrogen ion to bombard described first oxide layer 200 to be formed caused by the step of the first nitride layer 220 on described first oxide layer 200 surface before---Nitrogen ion bombards the first nitride layer 220, the part Nitrogen ion key in the first nitride layer 220 is made to disconnect the dangling bonds forming Nitrogen ion, also have part Nitrogen ion squeezes between the second nitride layer 210 and substrate 100 simultaneously, make substrate 100 towards the surface of the second nitride layer 210, or the second nitride layer 210 surface produces dangling bonds.
For formation second oxide layer 110: thermal oxidation can also make oxygen atom through described first oxide layer 200 and the second nitride layer 210 and then arrive substrate 100 place, and then form described second oxide layer 110 on the surface of the substrate 100 relative to described first oxide layer 200, like this can described first oxide layer 200 of employing Nitrogen ion bombardment before correction to form on described first oxide layer 200 surface the equivalence first oxide layer height consumed in the step of the first nitride layer 220, continue with reference to figure 6, line segment 20 wherein illustrates above-mentioned A, B, the equivalence first oxide layer height of tunnel layer in C tri-steps.Can find out, equivalent first oxide layer height h
2be less than equivalent first oxide layer height h
1, its reason is that step B adopts Nitrogen ion to bombard the first oxide layer 200 and can consume the equivalent first oxide layer height of a part.
And for step C, namely described substrate 100, first oxide layer 200 (the present embodiment also comprises the second nitride layer 210) and the first nitride layer 220 are carried out to the step of thermal oxidation, oxygen atom through and with substrate 100 in conjunction with formation second oxide layer 110, equivalence first oxide layer height h now
3equivalent first oxide layer height h will be greater than
2, namely make equivalent first oxide layer height h to a certain extent
3close to equivalent first oxide layer height h
1, thus the electrical maintenance of tunnel layer is stablized.
In the present embodiment, the step that substrate 100, first oxide layer 200 and the first nitride layer 220 carry out thermal oxidation is comprised: make the temperature of thermal oxidation in the scope of 650 ~ 1050 degrees Celsius, the flow of the oxygen passed into is in the scope of 0.1 ~ 10 Standard Liters per Minute, the time of thermal oxidation is in the scope of 5 ~ 3600 seconds, while described second oxide layer 110 of formation, the impact on other structures of device can be reduced like this.
But same, above-mentioned parameter is only an example of the present embodiment, when practical operation, should adjust accordingly according to actual conditions to parameter.
Described first nitride layer forms grid, is the floating boom of flash device in the present embodiment.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (12)
1. a formation method for grid structure, is characterized in that, comprising:
Substrate is provided;
Form the first oxide layer over the substrate;
Adopt described first oxide layer of Nitrogen ion bombardment, to form the first nitride layer on described first oxide layer surface;
After described first nitride layer of formation, thermal oxidation is carried out to described substrate, the first oxide layer and the first nitride layer;
After the step of thermal oxidation, described first nitride layer forms grid.
2. form method as claimed in claim 1, it is characterized in that, provide the step of substrate to comprise: to provide silicon substrate;
The step forming the first oxide layer comprises: the first oxide layer forming earth silicon material;
The step forming the first nitride layer comprises: the first nitride layer forming silicon oxy-nitride material.
3. form method as claimed in claim 1, it is characterized in that, the step forming the first oxide layer comprises:
Make the partial surface oxidation of substrate to form described first oxide layer.
4. form method as claimed in claim 1, it is characterized in that, the step forming the first oxide layer comprises:
Make oxidizing temperature in the scope of 650 ~ 1000 degrees Celsius, oxygen flow is in the scope of 0.1 ~ 10 Standard Liters per Minute, and oxidization time is in the scope of 2 ~ 60 minutes.
5. form method as claimed in claim 1, it is characterized in that, after forming the step of the first oxide layer, before forming the step of the first nitride layer, described formation method also comprises:
The second nitride layer is formed between described substrate and the first oxide layer.
6. form method as claimed in claim 5, it is characterized in that, the step forming the second nitride layer comprises: second nitride layer of concentration in 2% ~ 10% scope forming nitrogen-atoms.
7. form method as claimed in claim 5, it is characterized in that, by forming described second nitride layer to the mode of substrate surface thermal diffusion Nitrogen ion.
8. form method as claimed in claim 7, it is characterized in that, adopt nitric oxide or nitrous oxide gas as the ion source of thermal diffusion Nitrogen ion.
9. form method as claimed in claim 1, it is characterized in that, the step forming the first nitride layer comprises: make the concentration of nitrogen-atoms in the first nitride layer of formation in the scope of 10% ~ 25%.
10. form method as claimed in claim 1, it is characterized in that, the step forming the first nitride layer comprises: adopt plasma generation device to produce described first oxide layer of Nitrogen ion bombardment, to form described first nitride layer, and make the power of plasma generation device in the scope of 200 ~ 1500 watts, described in plasma bombardment during the first oxide layer surrounding environment pressure in the scope of 5 ~ 5000 millitorrs, temperature in the scope of 23 ~ 500 degrees Celsius, the flow of nitrogen 5 ~ 1000 standard milliliters/minute scope in.
11. form method as claimed in claim 1, it is characterized in that, the step of substrate, the first oxide layer and the first nitride layer being carried out to thermal oxidation comprises: make the temperature of thermal oxidation in the scope of 650 ~ 1050 degrees Celsius, the flow of the oxygen passed into is in the scope of 0.1 ~ 10 Standard Liters per Minute, and the time of thermal oxidation is in the scope of 5 ~ 3600 seconds.
12. form method as claimed in claim 1, it is characterized in that, the step of substrate, the first oxide layer and the first nitride layer being carried out to thermal oxidation also comprises: the surface relative with described first oxide layer at described substrate forms the second oxide layer.
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| RJ01 | Rejection of invention patent application after publication |