CN105097640A - Isolated insulation film of quick-flash memory and manufacture method of isolated insulation film - Google Patents
Isolated insulation film of quick-flash memory and manufacture method of isolated insulation film Download PDFInfo
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- CN105097640A CN105097640A CN201410161669.9A CN201410161669A CN105097640A CN 105097640 A CN105097640 A CN 105097640A CN 201410161669 A CN201410161669 A CN 201410161669A CN 105097640 A CN105097640 A CN 105097640A
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Abstract
The invention discloses an isolated insulation film of a quick-flash memory and a manufacture method of the isolated insulation film. The manufacture method comprises that a lamination structure which is successively composed of a substrate, a grid oxide layer, a floating gate polysilicon layer and a mask nitride layer is formed; a shallow trench isolation (STI) region is formed in the lamination structure; a substrate oxide layer is formed at the inner wall of the STI region; the isolated insulation film is formed on the substrate oxide layer and the mask nitride layer in a spin coating manner; and first wet treatment and second wet treatment are successively carried out on the isolated insulation film. Thus, the yield rate and reliability of the quick-flash memory can be improved.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to isolation insulating film of a kind of flash memory and preparation method thereof.
Background technology
Flash memory is a kind of form of Electrical Erasable programmable read only memory.With non-(NAND) type flash memory, but reducing along with device size, the flash memory isolation insulating film adopting conventional method to prepare often can produce in " cavity ", causes the problem of yield and reliability.Meanwhile, device size reduce the depth-width ratio also correspondingly increasing shallow channel, make the filling of isolation insulating film become more and more difficult.
Current industry many employings high-density plasma fills (HighDensityPlasma, HDP) technology, realizes the filling of isolated area.Along with reducing of device size, HDP filling can produce cavity.For improving filling perforation performance, some company adopts the mode of HDP+HARP (HighAspectRatioProcess, high-aspect-ratio fill process).
But, the mode of the HDP+HARP of prior art, the plasma of HDP technique middle-high density can produce damage to the gate oxide level of flash memory, and HARP technique will through high annealing after film forming, the gate oxide level of flash memory can be made to form the phenomenon of similar " beak ", and then cause the reliability of flash memory not good.
Summary of the invention
The object of the invention is to isolation insulating film proposing a kind of flash memory and preparation method thereof, to improve yield and the reliability of flash memory.
First aspect, the invention provides a kind of manufacture method of isolation insulating film of flash memory, and described method comprises:
Form the laminated construction be made up of substrate, gate oxide level, floating gate polysilicon layer and mask nitride layer successively;
Shallow trench isolation regions is formed in described laminated construction;
The inwall of described shallow trench isolation regions forms liner oxide layer;
In described liner oxide layer and described mask nitride layer, isolation insulating film is formed by spin coating mode;
Successively the first wet treatment and the second wet treatment are carried out to described isolation insulating film.
Optionally, autoregistration shallow trench isolation technique is adopted to form shallow trench isolation regions in described laminated construction.
Optionally, the described process forming liner oxide layer on the inwall of described shallow trench isolation regions comprises: high temperature oxidation process, on-site steam generating process or atom layer deposition process.
Optionally, the thickness of described liner oxide layer is 3 to 10 nanometers.
Optionally, after the inwall of described shallow trench isolation regions forms liner oxide layer, before forming isolation insulating film by spin coating mode in described liner oxide layer and described mask nitride layer, also comprise:
Temperature range be 700 to 900 degrees Celsius, processing time scope be 10 to 60 minutes and atmosphere is N
2or N
2with under the condition of Ar mist, n 2 annealing process is carried out to described liner oxide layer.
Optionally, the described material forming isolation insulating film by spin coating mode in described liner oxide layer and described mask nitride layer comprises: polysilazane.
Optionally, the thickness of described isolation insulating film is 400 to 500 nanometers.
Optionally, described in described liner oxide layer and described mask nitride layer, form isolation insulating film by spin coating mode after, also comprise:
Be 250 to 300 degrees Celsius in temperature range, under the processing time is the condition of 20 to 60 minutes, adopt the steam treatment technique of silicon chip to carry out cure process to described isolation insulating film.
Optionally, the described number of times carrying out the first wet treatment and the second wet treatment to described isolation insulating film is successively 2 to 5 times.
Optionally, the process conditions of described first wet treatment comprise: temperature range is 50 to 80 degrees Celsius, and the processing time is 10 to 60 minutes and liquid environment is warm water.
Optionally, described second wet treatment comprises: successively in the liquid environment of sulfuric acid and the mixed liquor of hydrogen peroxide and the mixed liquor of ammonium hydroxide, hydrogen peroxide and water, carry out wet treatment to described isolation insulating film.
Optionally, described successively the first wet treatment and the second wet treatment are carried out to described isolation insulating film after, also comprise:
Be 450 to 600 degrees Celsius in temperature range, under the processing time is within 30 minutes condition, adopt the steam treatment technique of silicon chip to carry out cure process to described isolation insulating film.
Second aspect, present invention also offers a kind of isolation insulating film of flash memory, and the manufacture method of the isolation insulating film of the flash memory that described isolation insulating film adopts first aspect present invention to provide obtains.
Isolation insulating film of a kind of flash memory provided by the invention and preparation method thereof, shallow trench isolation regions is formed by adopting autoregistration shallow trench isolation technique, damage can not be produced to the gate oxide level of flash memory, the gate oxide level of flash memory can not be made to form the phenomenon of similar " beak "; Form isolation insulating film by spin coating mode, the cavity in isolation insulating film can be reduced, realize filling without cavity, similar mistake can not be brought again heavily stressed and the yield that causes and integrity problem; By carrying out the first wet treatment and the second wet treatment to isolation insulating film successively, the impurity in isolation insulating film can be removed, make to put isolation insulating film and there is good filling capacity, improve the performance of isolation insulating film, and then improve yield and the reliability of flash memory.
Accompanying drawing explanation
Fig. 1 is the realization flow figure of the manufacture method of the isolation insulating film of the flash memory that the embodiment of the present invention provides;
Fig. 2 a-Fig. 2 d is structure chart corresponding to the manufacture method of the isolation insulating film of the flash memory that the embodiment of the present invention provides;
Fig. 3 a-Fig. 3 b is the schematic diagram producing bubble and release bubble process in the manufacture method of the isolation insulating film of the flash memory that the embodiment of the present invention provides.
The technical characteristic that Reference numeral in figure refers to respectively is:
201, substrate; 202, gate oxide level; 203, floating gate polysilicon layer; 204, mask nitride layer; 205, shallow trench isolation regions; 206, liner oxide layer; 207, isolation insulating film; 301, bubble.
Embodiment
Clearly, below in conjunction with drawings and Examples, the present invention is described in further detail for the technical problem solved for making the present invention, the technical scheme of employing and the technique effect that reaches.Be understandable that, specific embodiment described herein is only for explaining the present invention, but not limitation of the invention.It also should be noted that, for convenience of description, illustrate only part related to the present invention in accompanying drawing but not full content.
Fig. 1 is the realization flow figure of the manufacture method of the isolation insulating film of the flash memory that the embodiment of the present invention provides.As shown in Figure 1, the method that the embodiment of the present invention provides comprises:
Step 101, forms the laminated construction be made up of substrate, gate oxide level, floating gate polysilicon layer and mask nitride layer successively.
Fig. 2 a is the corresponding in this step structure chart of the manufacture method of the isolation insulating film of the flash memory that the embodiment of the present invention provides.With reference to Fig. 2 a, form the laminated construction be made up of substrate 201, gate oxide level 202, floating gate polysilicon layer 203 and mask nitride layer 204 successively.
Step 102, forms shallow trench isolation regions in described laminated construction.
Fig. 2 b is the corresponding in this step structure chart of the manufacture method of the isolation insulating film of the flash memory that the embodiment of the present invention provides.With reference to Fig. 2 b, in described laminated construction, form shallow trench isolation regions 205.
In described laminated construction, form shallow trench isolation regions 205, specifically can comprise: etch described laminated construction, the part laminated construction etched away forms shallow trench isolation regions 205, and the laminated construction part be not etched away is formed with source region.The effect of isolation is played in the shallow trench isolation regions 205 formed to adjacent active area.
Concrete, autoregistration shallow trench isolation technique (Self-AlignedShallowTrenchIsolation, SA-STI) can be adopted in described laminated construction to form shallow trench isolation regions 205.
Step 103, the inwall of described shallow trench isolation regions forms liner oxide layer.
Fig. 2 c is the corresponding in this step structure chart of the manufacture method of the isolation insulating film of the flash memory that the embodiment of the present invention provides.With reference to Fig. 2 c, the inwall of described shallow trench isolation regions 205 forms liner oxide layer 206.
Concrete, the described process forming liner oxide layer 206 on the inwall of described shallow trench isolation regions 205 can comprise: high temperature oxidation process (HighTemperatureOxidation, HTO), on-site steam generating process (In-SituSteamGeneration, or atom layer deposition process (AtomicLayerDeposition, ALD) ISSG).
Preferably, the thickness of described liner oxide layer 206 is 3 to 10 nanometers.
Preferably, after the inwall of described shallow trench isolation regions 205 forms liner oxide layer 206, can also comprise: temperature range be 700 to 900 degrees Celsius, processing time scope be 10 to 60 minutes and atmosphere is N
2or N
2with under the condition of Ar mist, n 2 annealing process is carried out to described liner oxide layer 206.N 2 annealing process can make liner oxide layer 206 finer and close, and then makes the insulation property of liner oxide layer 206 better.
Wherein, liner oxide layer 206 can alleviate the stress that isolation insulating film 207 pairs of flash memories of producing in flash memory subsequent fabrication process cause, simultaneously, liner oxide layer 206 can play the effect of stop, with the active area preventing the impurity in the isolation insulating film that produces in subsequent fabrication process to be penetrated into flash memory.
Step 104, forms isolation insulating film by spin coating mode in described liner oxide layer and described mask nitride layer.
Fig. 2 d is the corresponding in this step structure chart of the manufacture method of the isolation insulating film of the flash memory that the embodiment of the present invention provides.With reference to Fig. 2 d, in described liner oxide layer 206 and described mask nitride layer 204, form isolation insulating film 207 by spin coating mode.
Wherein, the thickness of described isolation insulating film 207 is 400 to 500 nanometers.The described material forming isolation insulating film 207 by spin coating mode in described liner oxide layer and described mask nitride layer can comprise: polysilazane (Polysilazane, PSZ).
Concrete, adopt polysilazane as the raw material forming described isolation insulating film, owing to being liquid condition under polysilazane usual conditions, adopt spin coating mode, described liner oxide layer 206 and described mask nitride layer 204 cover one deck polysilazane, to fill the shallow trench isolation regions formed after liner oxide layer 206.In addition, owing to containing the impurity such as nitrogen, carbon inside polysilazane, in the isolation insulating film of formation, also the impurity such as nitrogen, carbon can be contained.
Optionally, described in described liner oxide layer 206 and described mask nitride layer 204, form isolation insulating film 207 by spin coating mode after, can also comprise: temperature range be 250 to 300 degrees Celsius, under the processing time is the condition of 20 to 60 minutes, the steam treatment technique (WaterVaporGenerator, WVG) of silicon chip is adopted to carry out cure process to described isolation insulating film 207.
Step 105, carries out the first wet treatment and the second wet treatment to described isolation insulating film successively.
Wherein, the process conditions of described first wet treatment can comprise: temperature range is 50 to 80 degrees Celsius, and the processing time is 10 to 60 minutes and liquid environment is warm water.Such as, be 60 degrees Celsius in temperature, under the processing time is halfhour condition, warm water process carried out to described isolation insulating film 207.Fig. 3 a is the schematic diagram that the manufacture method of the isolation insulating film of the flash memory that the embodiment of the present invention provides produces bubble process in this step.With reference to Fig. 3 a, after described first wet treatment, the nitrogen-atoms in isolation insulating film 207 can be replaced by oxygen atom, and then changes silica into, reaches the object of the impurity removed in isolation insulating film, and the not removed nitrogen of part, carbon can form NH
3or CO
2molecule, remains in inside isolation insulating film 207 as bubble 301.
Described second wet treatment can comprise: successively in the liquid environment of sulfuric acid and the mixed liquor (SPM) of hydrogen peroxide and the mixed liquor (SC1) of ammonium hydroxide, hydrogen peroxide and water, carry out wet treatment to described isolation insulating film 207.Fig. 3 b is the schematic diagram that the manufacture method of the isolation insulating film of the flash memory that the embodiment of the present invention provides discharges bubble process in this step.With reference to Fig. 3 b, after described second wet treatment, the bubble 301 remained in isolation insulating film 207 can be released, thus reduces the impurity in isolation insulating film 207.
Optionally, the described number of times carrying out the first wet treatment and the second wet treatment to described isolation insulating film 207 is successively 2 to 5 times.Repeatedly successively the first wet treatment is carried out to described isolation insulating film 207 and the second wet treatment can make the performance of isolation insulating film 207 more excellent.
Described successively the first wet treatment and the second wet treatment are carried out to described isolation insulating film 207 after, can also comprise: be 450 to 600 degrees Celsius in temperature range, under the processing time is within 30 minutes condition, adopt the steam treatment technique of silicon chip to carry out cure process to described isolation insulating film 207.
The manufacture method of the isolation insulating film of the flash memory that the present embodiment provides, shallow trench isolation regions is formed by adopting autoregistration shallow trench isolation technique, damage can not be produced to the gate oxide level of flash memory, the gate oxide level of flash memory can not be made to form the phenomenon of similar " beak "; Form isolation insulating film by spin coating mode, the cavity in isolation insulating film can be reduced, realize filling without cavity, similar mistake can not be brought again heavily stressed and the yield that causes and integrity problem; By carrying out the first wet treatment and the second wet treatment to isolation insulating film successively, the impurity in isolation insulating film can be removed, make to put isolation insulating film and there is good filling capacity, improve the performance of isolation insulating film, and then improve yield and the reliability of flash memory.
The embodiment of the present invention additionally provides a kind of isolation insulating film of flash memory, and the manufacture method of the isolation insulating film of the flash memory that described isolation insulating film adopts any embodiment of the present invention to provide obtains.
Note, foregoing is only preferred embodiment of the present invention.Skilled person in the art will appreciate that and the invention is not restricted to specific embodiment described here, various obvious change can be carried out for a person skilled in the art, readjust and substitute and can not protection scope of the present invention be departed from.Therefore, although be described in further detail invention has been by above embodiment, the present invention is not limited only to above embodiment, when not departing from the present invention's design, can also comprise other Equivalent embodiments more, and scope of the present invention is determined by appended right.
Claims (13)
1. a manufacture method for the isolation insulating film of flash memory, is characterized in that, comprising:
Form the laminated construction be made up of substrate, gate oxide level, floating gate polysilicon layer and mask nitride layer successively;
Shallow trench isolation regions is formed in described laminated construction;
The inwall of described shallow trench isolation regions forms liner oxide layer;
In described liner oxide layer and described mask nitride layer, isolation insulating film is formed by spin coating mode;
Successively the first wet treatment and the second wet treatment are carried out to described isolation insulating film.
2. method according to claim 1, is characterized in that, adopts autoregistration shallow trench isolation technique to form shallow trench isolation regions in described laminated construction.
3. method according to claim 1, is characterized in that, the described process forming liner oxide layer on the inwall of described shallow trench isolation regions comprises: high temperature oxidation process, on-site steam generating process or atom layer deposition process.
4. the method according to claim 1 or 3, is characterized in that, the thickness of described liner oxide layer is 3 to 10 nanometers.
5. method according to claim 1, it is characterized in that, after the inwall of described shallow trench isolation regions forms liner oxide layer, before forming isolation insulating film by spin coating mode in described liner oxide layer and described mask nitride layer, also comprise:
Temperature range be 700 to 900 degrees Celsius, processing time scope be 10 to 60 minutes and atmosphere is N
2or N
2with under the condition of Ar mist, n 2 annealing process is carried out to described liner oxide layer.
6. method according to claim 1, is characterized in that, the described material forming isolation insulating film by spin coating mode in described liner oxide layer and described mask nitride layer comprises: polysilazane.
7. the method according to claim 1 or 6, is characterized in that, the thickness of described isolation insulating film is 400 to 500 nanometers.
8. method according to claim 1, is characterized in that, described in described liner oxide layer and described mask nitride layer, form isolation insulating film by spin coating mode after, also comprise:
Be 250 to 300 degrees Celsius in temperature range, under the processing time is the condition of 20 to 60 minutes, adopt the steam treatment technique of silicon chip to carry out cure process to described isolation insulating film.
9. method according to claim 1, is characterized in that, the described number of times carrying out the first wet treatment and the second wet treatment to described isolation insulating film is successively 2 to 5 times.
10. the method according to claim 1 or 9, is characterized in that, the process conditions of described first wet treatment comprise: temperature range is 50 to 80 degrees Celsius, and the processing time is 10 to 60 minutes and liquid environment is warm water.
11. methods according to claim 1 or 9, it is characterized in that, described second wet treatment comprises: successively in the liquid environment of sulfuric acid and the mixed liquor of hydrogen peroxide and the mixed liquor of ammonium hydroxide, hydrogen peroxide and water, carry out wet treatment to described isolation insulating film.
12. methods according to claim 1, is characterized in that, described successively the first wet treatment and the second wet treatment are carried out to described isolation insulating film after, also comprise:
Be 450 to 600 degrees Celsius in temperature range, under the processing time is within 30 minutes condition, adopt the steam treatment technique of silicon chip to carry out cure process to described isolation insulating film.
The isolation insulating film of 13. 1 kinds of flash memories, is characterized in that, adopts the manufacture method of the isolation insulating film of the flash memory according to any one of claim 1-12 to obtain.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110265402A (en) * | 2019-06-27 | 2019-09-20 | 长江存储科技有限责任公司 | A kind of 3D nand memory part and its manufacturing method |
| CN110364476A (en) * | 2018-04-09 | 2019-10-22 | 无锡华润上华科技有限公司 | A kind of manufacturing method of semiconductor devices |
| CN111106057A (en) * | 2019-11-18 | 2020-05-05 | 华虹半导体(无锡)有限公司 | Method for manufacturing STI (shallow trench isolation) structure of flash memory device and flash memory device |
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| US20090189213A1 (en) * | 2008-01-18 | 2009-07-30 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method of fabricating the same |
| US20100311220A1 (en) * | 2009-06-08 | 2010-12-09 | Shogo Matsuo | Method for manufacturing semiconductor device and nand-type flash memory |
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2014
- 2014-04-22 CN CN201410161669.9A patent/CN105097640B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090189213A1 (en) * | 2008-01-18 | 2009-07-30 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method of fabricating the same |
| US20100311220A1 (en) * | 2009-06-08 | 2010-12-09 | Shogo Matsuo | Method for manufacturing semiconductor device and nand-type flash memory |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364476A (en) * | 2018-04-09 | 2019-10-22 | 无锡华润上华科技有限公司 | A kind of manufacturing method of semiconductor devices |
| CN110364476B (en) * | 2018-04-09 | 2022-03-22 | 无锡华润上华科技有限公司 | Method for manufacturing semiconductor device |
| CN110265402A (en) * | 2019-06-27 | 2019-09-20 | 长江存储科技有限责任公司 | A kind of 3D nand memory part and its manufacturing method |
| CN111106057A (en) * | 2019-11-18 | 2020-05-05 | 华虹半导体(无锡)有限公司 | Method for manufacturing STI (shallow trench isolation) structure of flash memory device and flash memory device |
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Address after: 502 / 15, building 1, 498 GuoShouJing Road, Zhangjiang High Tech Park, Pudong New Area, Shanghai 201203 Patentee after: SHANGHAI GEYI ELECTRONIC Co.,Ltd. Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 502 / 15, building 1, 498 GuoShouJing Road, Zhangjiang High Tech Park, Pudong New Area, Shanghai 201203 Patentee before: SHANGHAI GEYI ELECTRONIC Co.,Ltd. Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |
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