CN105565251A - MEMS and CMOS integrated chip and transducer - Google Patents
MEMS and CMOS integrated chip and transducer Download PDFInfo
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- CN105565251A CN105565251A CN201410528138.9A CN201410528138A CN105565251A CN 105565251 A CN105565251 A CN 105565251A CN 201410528138 A CN201410528138 A CN 201410528138A CN 105565251 A CN105565251 A CN 105565251A
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Abstract
The invention discloses an MESMS and CMOS integrated chip and a transducer. The transducer comprises a first substratum, a second substratum, and the mechanical structural layer which locates between the first substratum and the second substratum. A first CMOS structure is formed on the first substratum; a second CMOS structure is formed on the second substratum; a first MEMS structure is formed in mechanical structural layer; and the first CMOS structure, the second CMOS structure and the MEMS structure are electrically connected. The CMOS structure is divided into two parts which are formed respectively in the first and the second substratum; and then the two CMOS structures are electrically connected with micromechanical structural layer; an area of the CMOS structure occupying the integrated chip can be effectively reduced; and further the area of the MEMS and the CMOS integrated chip is reduced.
Description
Technical field
The present invention relates to micro-electromechanical system field, more specifically, relate to a kind of MEMS and CMOS integrated chip and sensor.
Background technology
MEMS (MicroElectroMechanicalSystem, MEMS) be a new and high technology of high speed development in recent years, adopt advanced semiconductor process technique, be formed in chip piece by whole frame for movement, it has fairly obvious advantage in volume, weight, price and power consumption.
Wherein, MEMS sensor, because its volume is little, cost is low, integrated performance advantages of higher, is widely used in the intelligent terminal such as smart mobile phone, panel computer.Along with the development in market, day by day urgent to the demand of more portable and frivolous intelligent terminal, therefore, more miniaturized MEMS sensor, has become one of focus of scientific research personnel's concern now.
Summary of the invention
In view of this, the invention provides a kind of MEMS and CMOS integrated chip and sensor, by optimal design, CMOS structure area occupied is reduced, make the area of MEMS and CMOS integrated chip more miniaturized.
Be technical scheme provided by the invention below:
A kind of MEMS and CMOS integrated chip, comprising: the first substrate, the second substrate, and, the frame for movement layer between described first substrate and the second substrate; Wherein,
Described first substrate is formed with the first CMOS structure, and described second substrate is formed with the second CMOS structure, and described frame for movement layer is formed with the first MEMS structure, and described first CMOS structure, is electrically connected between the second CMOS structure and MEMS structure.
Preferably, described first CMOS structure is formed at the surface of described first substrate towards described frame for movement layer side, and described first CMOS structure and described first MEMS structure bonding.
Preferably, described second CMOS structure is formed at the surface of described second substrate towards described frame for movement layer side, and described second CMOS structure and described first MEMS structure bonding.
Preferably, be positioned at described first substrate and be formed with the first groove towards the side of described frame for movement layer;
Wherein, in the annular seal space that described first MEMS structure surrounds between described first groove and the second substrate.
Preferably, described first CMOS structure is formed at described first substrate towards described frame for movement layer side and around the surface of described first groove.
Preferably, be positioned at described second substrate and also comprise the second groove towards described frame for movement layer side;
Wherein, in the annular seal space that described first MEMS structure surrounds between described first groove and the second groove.
Preferably, described second CMOS structure is formed at described second substrate towards described frame for movement layer side and around the surface of described second groove.
Preferably, described frame for movement layer also comprises the second MEMS structure to the n-th MEMS structure, and described second MEMS structure to the n-th MEMS structure, is electrically connected between the first CMOS structure and the second CMOS structure, and wherein, n is at least 2.
A kind of sensor, described sensor comprises above-mentioned MEMS and CMOS integrated chip.
Preferably, described sensor is one or more the set in Magnetic Sensor, pressure sensor, acceleration transducer, gyro sensor.
Compared with prior art, technical scheme provided by the invention has the following advantages:
A kind of MEMS and CMOS integrated chip provided by the invention and sensor, comprising: the first substrate, the second substrate, and, the frame for movement layer between the first substrate and the second substrate; Wherein, the first substrate is formed with the first CMOS structure, and the second substrate is formed with the second CMOS structure, and frame for movement layer is formed with the first MEMS structure, and the first CMOS structure, is electrically connected between the second CMOS structure and MEMS structure.
As shown in the above, CMOS structure is divided into two parts by technical scheme provided by the invention, be formed on the first substrate and the second substrate respectively, then by micro mechanical structure layer, two-part CMOS structure is electrically connected, effectively reduce the area that CMOS structure takies integrated chip, and then reduce the area of MEMS and CMOS integrated chip.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments of the invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to the accompanying drawing provided.
The structural representation of a kind of MEMS and CMOS integrated chip that Fig. 1 provides for the embodiment of the present application;
The structural representation of another kind of MEMS and the CMOS integrated chip that Fig. 2 provides for the embodiment of the present application;
A kind of structure flow chart making MEMS and CMOS integrated chip that Fig. 3 a ~ 3d provides for the embodiment of the present application.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
As described in background, more miniaturized MEMS sensor, has become one of focus of scientific research personnel's concern now.But, in existing MEMS sensor, need CMOS structure to be formed on a substrate, but due to technology today restriction and, CMOS structure is difficult to significantly compress the area taking chip, therefore makes the area of existing MEMS sensor reduce and becomes more difficult.
Based on this, the embodiment of the present application provides a kind of MEMS and CMOS integrated chip, to solve the problem that existing MEMS sensor cannot be more miniaturized, below in conjunction with Fig. 1 ~ 3d, the structure of MEMS and the CMOS integrated chip that the embodiment of the present application provides and manufacturing process are described in detail.
Shown in figure 1, be the structural representation of a kind of MEMS and CMOS integrated chip that the embodiment of the present application provides, wherein, MEMS and CMOS integrated chip comprises:
First substrate 1, second substrate 2,
And, the frame for movement layer 3 between described first substrate 1 and the second substrate 2;
Wherein,
Described first substrate 1 is formed with the first CMOS structure 100, described second substrate 2 is formed with the second CMOS structure 200, described frame for movement layer 3 is formed with the first MEMS structure 300, and is electrically connected between described first CMOS structure 100, second CMOS structure 200 and MEMS structure 300.
For MEMS and the CMOS integrated chip that the embodiment of the present application provides, in its manufacturing process, the manufacture craft of each structure of composition does not do concrete restriction, wherein, shown in figure 3a ~ 3d, it is a kind of structure flow chart making MEMS and CMOS integrated chip that the embodiment of the present application provides, wherein
First, shown in figure 3a, need to provide one first substrate 1, then on the first substrate 1, form the first CMOS structure;
Secondly, shown in figure 3b, the first substrate 1 forms mechanical structure sheaf 3, and in frame for movement layer 3, form a MEMS structure 300, MEMS structure 300 and the first CMOS structure 100 are electrically connected.Be electrically connected for MEMS structure and the first CMOS structure, can be realized by bonding pattern, optionally, bonding pattern can be the melting bonding etc. of eutectic bonding, metal or silicon materials.Wherein, the thickness range of frame for movement layer 3 can be 10 μm ~ 100 μm, comprises endpoint value.More preferred, can be 10 μm, 20 μm, 30 μm or 60 μm.
Then, shown in figure 3c, provide one second substrate 2, the second substrate 2 is formed the second CMOS structure 200.In addition, optionally, MEMS and CMOS integrated chip and the extraneous splicing ear 5 realizing being electrically connected can also be formed on the second substrate 2.
Finally, shown in figure 3d, the structure fixed-link that the structure formed Fig. 3 b and Fig. 3 c are formed, realizes the second CMOS structure and MEMS structure is electrically connected.Wherein, second CMOS structure and MEMS structure can realize being electrically connected by bonding pattern, namely in structure shown in Fig. 3 b, the side that frame for movement layer 3 can be deviated from the first substrate 1 does not need the region etch shallow slot of bonding, in the end to realize bonding between the second CMOS structure and MEMS structure.
Can be learnt by foregoing, MEMS and the CMOS integrated chip that the embodiment of the present application provides, mainly CMOS structure is divided into two parts to make, wherein, a part is formed on the first substrate, another part is then formed on the second substrate, finally again in conjunction with MEMS structure, and then obtains MEMS and CMOS integrated chip.By CMOS structure is divided into two parts, and the method formed on different substrates, can by single large-area CMOS structure, be divided into the CMOS structure of two small sizes, and the CMOS structure of a small size is formed on another substrate of integrated chip, effectively reduce the area of MEMS and CMOS integrated chip, and then reduce the area of MEMS sensor.
It should be noted that, in the embodiment of the present application, shape for the first substrate and the second substrate is not specifically limited, and, first CMOS structure can be formed at any one side of the first substrate, the second same CMOS structure can be formed at any one side of the second substrate, carries out concrete design to these needs according to the scene of practical application.But; general; in most practical application scene, in order to protect CMOS structure not to be worn, improve the security performance of MEMS and CMOS integrated chip; and; improve the service life etc. of MEMS and CMOS integrated chip, shown in figure 1, in the embodiment of the present application provides; described first CMOS structure 100 is formed at the surface of described first substrate 1 towards described frame for movement layer 3 side, and described first CMOS structure 100 and described first MEMS structure 300 bonding.And described second CMOS structure 200 is formed at the surface of described second substrate 2 towards described frame for movement layer 3 side, and described second CMOS structure 200 and described first MEMS structure 300 bonding.
Based on MEMS and the CMOS integrated chip that the embodiment corresponding to Fig. 1 provides, in order to improve the unfailing performance of MEMS and CMOS integrated chip, the embodiment of the present application additionally provides another kind of MEMS and CMOS integrated chip, shown in concrete reference diagram 2, for the structural representation of another kind of MEMS and the CMOS integrated chip that the embodiment of the present application provides, wherein, MEMS and CMOS integrated chip comprises:
First substrate 1, second substrate 2,
And, the frame for movement layer 3 between described first substrate 1 and the second substrate 2;
Wherein,
Described first substrate 1 is formed with the first CMOS structure 100, described second substrate 2 is formed with the second CMOS structure 200, described frame for movement layer 3 is formed with the first MEMS structure 300, and is electrically connected between described first CMOS structure 100, second CMOS structure 200 and MEMS structure 300.
And described first substrate 1 is formed with the first groove 4 towards the side of described frame for movement layer 3;
Wherein, in the annular seal space that described first MEMS structure 100 surrounds between described first groove 4 and the second substrate 2.
For MEMS and the CMOS integrated chip corresponding to above-mentioned Fig. 2, the MEMS structure that its MEMS structure is preferably movable, namely by mechanical movement to realize Sensor section function, in addition, for the frame for movement that this MEMS structure can be arranged for any direction, namely the embodiment of the present application does not do concrete restriction to the direction of motion of movable MEMS structure, needs to carry out specific design according to practical application.By designing the first groove, and by forming an annular seal space between the first groove and the second substrate, and MEMS structure being arranged in annular seal space, ensure that the isolation of MEMS structure and external environment, avoid external environment on the impact of MEMS structure.Such as, in MEMS capacitor resonance formula gyro sensor, by the annular seal space of vacuum, the frame for movement of gyro sensor is sealed, the frame for movement of gyro sensor and external environment are isolated, and then avoid extraneous steam or dust etc. frame for movement is impacted, improve the reliability of MEMS capacitor resonance formula gyro sensor, simultaneously, the working environment of vacuum improves the quality factor of the vibration of MEMS structure, improves the combination property of MEMS capacitor resonance formula.
MEMS and CMOS integrated chip shown in Fig. 2 that the application provides, shape for the first substrate and the second substrate is not specifically limited, and, first CMOS structure can be formed at any one side of the first substrate, the second same CMOS structure can be formed at any one side of the second substrate, carries out concrete design to these needs according to the scene of practical application.Same, in the scene of most of practical application, the first CMOS structure described in described first CMOS structure is formed at described first substrate towards described frame for movement layer side and around the surface of described first groove.
It should be noted that, for the specific features of the first CMOS structure around the first groove, the embodiment of the present application does not do concrete restriction to this, is ensureing, under the prerequisite that the area of MEMS and CMOS integrated chip narrows down to a certain degree, can preferably the first CMOS structure be made around the first groove; And in other cases, such as, after first substrate is determined around the area on the surface of the first groove, and the area of the first CMOS structure is greater than the area of the first substrate around the surface of the first groove, can by certain manufacture craft, first CMOS structure is produced on the surface of the first groove and the first substrate surface around the first groove simultaneously, and then ensures that the area of MEMS and CMOS integrated chip narrows down to a certain degree.
In addition, MEMS and the CMOS integrated chip provided based on the embodiment corresponding to Fig. 2, namely under the prerequisite of the isolation of the MEMS structure and external environment that ensure MEMS and CMOS integrated chip, further, the situation increasing the volume of the first substrate in order to avoid the setting due to the first groove occurs, MEMS and the CMOS integrated chip that the embodiment of the present application provides is preferred, is positioned at described second substrate and also comprises the second groove towards described frame for movement layer side;
Wherein, in the annular seal space that described first MEMS structure surrounds between described first groove and the second groove.
Based on MEMS and the CMOS integrated chip that the embodiment corresponding to Fig. 2 provides, form the first groove on the first substrate, wherein, may affect to some extent the mechanical strength of the first substrate, the complexity that makes the first CMOS structure, thus may occur that the thickness of increase by first substrate occurs with the situation eliminating these impacts, the volume reducing integrated chip is impacted.Therefore, MEMS and the CMOS integrated chip that the embodiment of the present application provides, also comprise the second groove be formed on the second substrate, wherein, the setting of the second groove can be passed through, under ensureing the impregnable situation of MEMS structure, the degree of depth of the first groove can be reduced, by the first groove and the second groove acting in conjunction, provide the annular seal space of vacuum, avoid the situation occurring increasing integrated chip volume.
Same, for the embodiment including the second groove that the application provides, shape for the first substrate and the second substrate is not specifically limited, and, first CMOS structure can be formed at any one side of the first substrate, the second same CMOS structure can be formed at any one side of the second substrate, carries out concrete design to these needs according to the scene of practical application.And in the scene of most of practical application, described first CMOS structure is formed at described first substrate towards described frame for movement layer side and around the surface of described first groove.And described second CMOS structure is formed at described second substrate towards described frame for movement layer side and around the surface of described second groove.
Optionally, in above-mentioned all embodiments that the application provides, described frame for movement layer also comprises the second MEMS structure to the n-th MEMS structure, and described second MEMS structure to the n-th MEMS structure, is electrically connected between the first CMOS structure and the second CMOS structure, wherein, n is at least 2.By arranging multiple identical MEMS structure, MEMS and the CMOS integrated chip that unfailing performance is higher can be obtained; Or, by arranging multiple different MEMS structure, multiple functional MEMS and CMOS integrated chip can be obtained, according to practical application, concrete design is carried out to these needs.
And, in above-mentioned all embodiments that the application provides, concrete restriction is not done to the setting externally realizing the splicing ear that point is connected in MEMS with CMOS integrated chip; Further, for material and the size of each structure of MEMS and CMOS integrated chip, and the manufacture craft of each structure does not do concrete restriction, and same needs carries out concrete choosing and designing according to practical application.
Finally, the embodiment of the present application additionally provides a kind of sensor, described sensor comprise that above-mentioned any embodiment provides MEMS and CMOS integrated chip.
Optionally, described sensor is one or more the set in Magnetic Sensor, pressure sensor, acceleration transducer, gyro sensor.
A kind of MEMS and CMOS integrated chip that the embodiment of the present application provides and sensor, comprising: the first substrate, the second substrate, and, the frame for movement layer between the first substrate and the second substrate; Wherein, the first substrate is formed with the first CMOS structure, and the second substrate is formed with the second CMOS structure, and frame for movement layer is formed with the first MEMS structure, and the first CMOS structure, is electrically connected between the second CMOS structure and MEMS structure.
As shown in the above, CMOS structure is divided into two parts by the technical scheme that the embodiment of the present application provides, be formed on the first substrate and the second substrate respectively, then by micro mechanical structure layer, two-part CMOS structure is electrically connected, effectively reduce the area that CMOS structure takies integrated chip, and then reduce the area of MEMS and CMOS integrated chip.
Claims (10)
1. a MEMS and CMOS integrated chip, is characterized in that, comprising: the first substrate, the second substrate, and, the frame for movement layer between described first substrate and the second substrate; Wherein,
Described first substrate is formed with the first CMOS structure, and described second substrate is formed with the second CMOS structure, and described frame for movement layer is formed with the first MEMS structure, and described first CMOS structure, is electrically connected between the second CMOS structure and MEMS structure.
2. MEMS and CMOS integrated chip according to claim 1, is characterized in that, described first CMOS structure is formed at the surface of described first substrate towards described frame for movement layer side, and described first CMOS structure and described first MEMS structure bonding.
3. MEMS and CMOS integrated chip according to claim 1, is characterized in that, described second CMOS structure is formed at the surface of described second substrate towards described frame for movement layer side, and described second CMOS structure and described first MEMS structure bonding.
4. MEMS and CMOS integrated chip according to claim 1, is characterized in that, is positioned at described first substrate and is formed with the first groove towards the side of described frame for movement layer;
Wherein, in the annular seal space that described first MEMS structure surrounds between described first groove and the second substrate.
5. MEMS and CMOS integrated chip according to claim 4, is characterized in that, described first CMOS structure is formed at described first substrate towards described frame for movement layer side and around the surface of described first groove.
6. MEMS and CMOS integrated chip according to claim 4, is characterized in that, is positioned at described second substrate and also comprises the second groove towards described frame for movement layer side;
Wherein, in the annular seal space that described first MEMS structure surrounds between described first groove and the second groove.
7. MEMS and CMOS integrated chip according to claim 6, is characterized in that, described second CMOS structure is formed at described second substrate towards described frame for movement layer side and around the surface of described second groove.
8. MEMS and the CMOS integrated chip according to claim 1 ~ 7 any one, it is characterized in that, described frame for movement layer also comprises the second MEMS structure to the n-th MEMS structure, and described second MEMS structure to the n-th MEMS structure, to be electrically connected between the first CMOS structure and the second CMOS structure, wherein, n is at least 2.
9. a sensor, is characterized in that, described sensor comprises MEMS and the CMOS integrated chip described in claim 1 ~ 8 any one.
10. sensor according to claim 9, is characterized in that, described sensor is one or more the set in Magnetic Sensor, pressure sensor, acceleration transducer, gyro sensor.
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Cited By (1)
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| CN111495448A (en) * | 2020-04-08 | 2020-08-07 | 中国科学院微电子研究所 | Micro-channel chip, photonic integrated chip and photonic integrated sensor |
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Application publication date: 20160511 |