CN105553455B - A kind of block isolating circuit and a kind of switching circuit - Google Patents
A kind of block isolating circuit and a kind of switching circuit Download PDFInfo
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- CN105553455B CN105553455B CN201511025143.9A CN201511025143A CN105553455B CN 105553455 B CN105553455 B CN 105553455B CN 201511025143 A CN201511025143 A CN 201511025143A CN 105553455 B CN105553455 B CN 105553455B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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Abstract
The present invention relates to a kind of block isolating circuits and a kind of switching circuit.The block isolating circuit is used for blocking direct current biasing, the block isolating circuit includes: concatenated first metal-oxide-semiconductor, first resistor and second resistance, and the first capacitor in parallel with first metal-oxide-semiconductor, the grid of first metal-oxide-semiconductor and the first end of the first resistor couple, the input terminal of source electrode and the block isolating circuit, the first end of the first capacitor couples, the second end of drain electrode and the first capacitor is coupled to the output end of the block isolating circuit, the first end of the second resistance and the substrate terminal of first metal-oxide-semiconductor couple, second end ground connection, the second end of the first resistor is coupled to first control signal, when the first control signal is power supply signal, first metal-oxide-semiconductor is in the conductive state.The present invention reduces circuit area, reduces the degree of degeneration of insertion loss on the basis of keeping the high power linearity not degenerate simple with structure.
Description
Technical field
The present invention relates to technical field of integrated circuits more particularly to a kind of block isolating circuits and a kind of switching circuit.
Background technique
Traditional switching circuit, such as antenna switch circuit, using negative and positive dual power voltage come drive control switch, thus
Obtain the preferable high power linearity.However, the generation circuit structure of negative supply voltage is complex, power consumption is larger, produce simultaneously
The performance of the interference effects switch such as raw noise.
With the development of circuit engineering, switching circuit can carry out drive control switch only with positive voltage.Fig. 1 is shown
In the prior art only with the structural schematic diagram of the switching circuit of positive voltage.Its driving method with utilize negative and positive dual power
The switching circuit of voltage is similar, i.e. the high power linearity remains unchanged, and structure is relatively easy, power consumption is lower.Such as Fig. 1 institute
Show, which is made by introduction capacitance still can be with driving switch under conditions of only positive voltage.However, every
Straight capacitor can bring largely insertion loss degeneration.If thinking the degree of degeneration of reduction insertion loss, capacitance needs to have
There is biggish capacitance.Fig. 2 shows insertion loss in the switching circuit of traditional dual-supply voltage and introduce capacitance
The contrast curve chart of insertion loss in the switching circuit of single-power voltage.It is inserted into it can be seen that being introduced into the circuit of capacitance
There are degradation phenomenas for loss, also, capacitance value is smaller, and insertion loss degree of degeneration is more serious.In the prior art, in order to keep away
Exempt from largely insertion loss, needs the area by increasing capacitance to increase capacitance, so as to cause circuit area
Become larger, increased costs.
Summary of the invention
The technical issues of technical solution of the present invention is solved are as follows: how the high power linearity to be kept not degenerate and structure letter
On the basis of list, reduce circuit area, and reduce the degree of degeneration of insertion loss.
In order to solve the above-mentioned technical problem, technical solution of the present invention provides a kind of block isolating circuit, inclined for blocking direct current
It sets, the block isolating circuit includes concatenated first metal-oxide-semiconductor, first resistor and second resistance, and in parallel with first metal-oxide-semiconductor
Capacitor, the first end of the grid of first metal-oxide-semiconductor and the first resistor couples, the input of source electrode and the block isolating circuit
The second end of the first end coupling at end, the capacitor, drain electrode and the capacitor is coupled to the output end of the block isolating circuit, described
The first end of second resistance and the substrate terminal of first metal-oxide-semiconductor couple, second end ground connection, the second end coupling of the first resistor
It is connected to first control signal, when the first control signal is power supply signal, first metal-oxide-semiconductor is in the conductive state.
Optionally, when the first control signal is ground signalling, first metal-oxide-semiconductor is in an off state.
Optionally, the block isolating circuit further include: 3rd resistor and concatenated second metal-oxide-semiconductor, the 4th resistance and the 5th
The first end of resistance, the grid of second metal-oxide-semiconductor and the 4th resistance couples, the drain electrode of source electrode and first metal-oxide-semiconductor
Coupling, drain electrode and the output end of the block isolating circuit couple, the first end of the 5th resistance and the substrate of second metal-oxide-semiconductor
End coupling, second end ground connection, the second end of the 4th resistance are coupled to the first control signal, and the of the 3rd resistor
One end is coupled to the source electrode of second metal-oxide-semiconductor, and second end is coupled to second control signal, when first metal-oxide-semiconductor and described
When second metal-oxide-semiconductor is in the conductive state, the second control signal is ground signalling.
Optionally, described when the first control signal is ground signalling, the second control signal is power supply signal
First metal-oxide-semiconductor and second metal-oxide-semiconductor are in an off state.
Optionally, the ratio of the capacitance of the capacitor and the shutdown capacitance of first metal-oxide-semiconductor is greater than 8.
Optionally, the ratio of the capacitance of the capacitor and the shutdown capacitance of second metal-oxide-semiconductor is greater than 8.
Optionally, the metal-oxide-semiconductor is NMOS tube.
Technical solution of the present invention additionally provides a kind of switching circuit, comprising: two block isolating circuits；And switching device
The output end of circuit, the input terminal of the switch device circuit and the first block isolating circuit couples, the switch device circuit
Output end and the second block isolating circuit output end couple.
Optionally, the switch device circuit includes at least one switch unit, the switch unit include the 6th resistance,
7th resistance and concatenated third metal-oxide-semiconductor, the 8th resistance and the 9th resistance, the grid of the third metal-oxide-semiconductor and the described 8th
The first end of resistance couples, and the first end of source electrode and the 6th resistance couples, the first end coupling of drain electrode and the 7th resistance
It connecing, the first end of substrate terminal and the 9th resistance couples, and the second of the second end of the 6th resistance and the 7th resistance
End is coupled to second control signal, and the second end of the 8th resistance is coupled to the first control signal, the 9th resistance
Second end ground connection, wherein the first end of the 6th resistance in the switch unit adjacent with the first block isolating circuit is also
It is coupled with the input terminal of the switch device circuit, the 7th electricity in the switch unit adjacent with the second block isolating circuit
The first end of resistance is also coupled with the output end of the switch device circuit.
Optionally, the switch device circuit includes multiple switch unit, previous to open in two adjacent switch units
6th resistance of the 7th resistance and the latter switch unit that close unit shares a resistance.
Optionally, the block isolating circuit further include: 3rd resistor and concatenated second metal-oxide-semiconductor, the 4th resistance and the 5th
The first end of resistance, the grid of second metal-oxide-semiconductor and the 4th resistance couples, the drain electrode of source electrode and first metal-oxide-semiconductor
Coupling, drain electrode and the output end of the block isolating circuit couple, the first end of the 5th resistance and the substrate of second metal-oxide-semiconductor
End coupling, second end ground connection, the second end of the 4th resistance are coupled to the first control signal, and the of the 3rd resistor
One end is coupled to the source electrode of second metal-oxide-semiconductor, and second end is coupled to second control signal, when first metal-oxide-semiconductor and described
When second metal-oxide-semiconductor is in the conductive state, the second control signal is ground signalling.
Optionally, described when the first control signal is ground signalling, the second control signal is power supply signal
First metal-oxide-semiconductor and second metal-oxide-semiconductor are in an off state.
Technical solution of the present invention includes at least following technical effect.
Block isolating circuit provided in an embodiment of the present invention, by the way that the first metal-oxide-semiconductor is in parallel with capacitor, reduction block isolating circuit conducting
Impedance reduces the degree of degeneration of circuit insertion loss.And the capacitor does not need have biggish capacitance, to reduce
Capacity area, has correspondingly reduced the area of block isolating circuit.
Further, the block isolating circuit will be in parallel with the capacitor again after the series connection of at least two metal-oxide-semiconductors, increases disconnection
The shutdown resistance value of metal-oxide-semiconductor when state, and shutdown capacitance is reduced, so as to improve the source-drain voltage of metal-oxide-semiconductor, improve metal-oxide-semiconductor
The linearity.
Correspondingly, switching circuit provided in an embodiment of the present invention also has above-mentioned advantage.Low in energy consumption, structure is simply basic
On, the degree of degeneration of insertion loss is reduced, capacity area is reduced, has correspondingly reduced the area of block isolating circuit, and humorous
The wave linearity is almost without degeneration.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram for switching circuit that the prior art provides；
Fig. 2 is the insertion loss of the switching circuit of existing dual-supply voltage and the switching circuit of existing single-power voltage
Insertion loss contrast schematic diagram；
Fig. 3 is a kind of structural schematic diagram for block isolating circuit that one embodiment of the invention provides；
Fig. 4 is a kind of structural schematic diagram for switching circuit that one embodiment of the invention provides；
Fig. 5 be another embodiment of the present invention provides a kind of block isolating circuit structural schematic diagram；
Fig. 6 be another embodiment of the present invention provides a kind of switching circuit structural schematic diagram；
Fig. 7 is the insertion loss of existing dual-supply voltage switching circuit and the insertion loss of switching circuit shown in fig. 6
Contrast schematic diagram；
Fig. 8 is the harmonic power of existing dual-supply voltage switching circuit and the harmonic power of switching circuit shown in fig. 6
Contrast schematic diagram.
Specific embodiment
It can be seen from background technology that, insertion loss degree of degeneration is more serious in the single-power voltage switching circuit of the prior art,
Circuit area is larger.
The present inventor has studied the single-power voltage switching circuit of the prior art, finds capacitance meeting therein
Largely insertion loss degeneration is brought, in order to reduce the degree of degeneration of insertion loss, the area of capacitance need to be increased, from
And circuit area is caused to increase.
The embodiment of the present invention proposes a kind of block isolating circuit, in parallel with capacitor come blocking direct current biasing using metal-oxide-semiconductor, and only
It is compared using the scheme of capacitor, reduces the capacitance and area of capacitance.
In order to keep the purpose of the present invention, feature and effect more obvious and easy to understand, with reference to the accompanying drawing to of the invention
Specific embodiment elaborates.
It should be noted that the purpose for providing these attached drawings contributes to understand the embodiment of the present invention, without that should explain
For to improperly limitation of the invention.For the sake of becoming apparent from, size as shown in the figure is not necessarily to scale, and may be put
Greatly, it reduces or other changes.In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but originally
Invention can also be implemented using other than the one described here other modes, therefore the present invention is not by following public specific
The limitation of embodiment.
One embodiment of the invention provides a kind of block isolating circuit.Referring to FIG. 3, block isolating circuit 100 is inclined for blocking direct current
It sets.The block isolating circuit 100 includes input terminal IN1, output end OUT1, concatenated first metal-oxide-semiconductor M1, first resistor R1 and second
Resistance R2, and the first capacitor C1 in parallel with the first metal-oxide-semiconductor M1.The signal of input terminal IN1 input and described
The signal of output end OUT1 output is radiofrequency signal, communication protocol in the information and practical application of specific radiofrequency signal and
Modulation system is related.
Specifically, the first end of the grid G 1 of the first metal-oxide-semiconductor M1 and the first resistor R1 couple, source S 11 with
The second end of the first end coupling of the input terminal IN1, the first capacitor C1, drain D 1 and the first capacitor C1 are coupled to
The output end OUT1 of the block isolating circuit 100, the substrate terminal of the first end of the second resistance R2 and the first metal-oxide-semiconductor M1
S12 coupling, second end ground terminal GND, the second end of the first resistor R1 are coupled to first control signal S01.
When the first control signal S01 is power supply signal, the first metal-oxide-semiconductor M1 is in the conductive state.At this point, institute
The conducting resistance for stating the first metal-oxide-semiconductor M1 is in parallel with the low-frequency high-impedance of the first capacitor C1, with the side only with capacitance
Case is compared, and impedance is reduced, and reduces the insertion loss degree of degeneration of circuit.Also, the first capacitor C1 does not need to have
Biggish capacitance, reduces capacity area, has correspondingly reduced the area of block isolating circuit.
In some embodiments, the ratio of the shutdown capacitance of the capacitance of the first capacitor C1 and the first metal-oxide-semiconductor M1
Value is greater than 8.When the first control signal S01 is ground signalling, the first metal-oxide-semiconductor M1 is in an off state.At this point, by
It is much larger than the shutdown capacitance of the first metal-oxide-semiconductor M1 in the capacitance of the first capacitor C1, reduces first metal-oxide-semiconductor
It is non-linear caused by the low-voltage of the source S11 of M1.
In some embodiments, the metal-oxide-semiconductor is NMOS tube.
One embodiment of the invention additionally provides a kind of switching circuit, including two above-mentioned block isolating circuits and switching device electricity
Road.Referring to FIG. 4, switching circuit 200 includes the first block isolating circuit 201, the second block isolating circuit 202 and switch device circuit
203.The switching circuit 200 is equivalent to a RF switch, when metal-oxide-semiconductor is in the conductive state, for passing input signal
Output is gone, and when metal-oxide-semiconductor is in an off state, is used for isolation input signal, is prevented input signal from leaking out.
Block isolating circuit in the present embodiment, in first block isolating circuit 201 and second block isolating circuit 202 and Fig. 3
100 structures are identical.The detailed description of first block isolating circuit 201 and 202 structure of the second block isolating circuit can be referred to
Above to the description of the block isolating circuit 100 in Fig. 3, details are not described herein.
The switch device circuit 203 mainly includes switching device and driving resistance, is coupled to the first blocking electricity
Between road 201 and second block isolating circuit 202, wherein the input terminal IN2 of the switch device circuit 203 and described first
The output end OUT1 of block isolating circuit 201 is coupled, the output end OUT2 of the switch device circuit 203 and second block isolating circuit
202 output end OUT1 ' coupling.
In some embodiments, the switch device circuit includes at least one switch unit.
Referring to FIG. 4, the switch device circuit 203 includes multiple switch unit 2031 in the present embodiment.Each switch
Unit 2031 includes 3rd resistor R3, the 4th resistance R4 and concatenated second metal-oxide-semiconductor M2, the 5th resistance R5 and the 6th resistance
The grid G 2 of R6, the second metal-oxide-semiconductor M2 and the first end of the 5th resistance R5 couple, source S 21 and the 3rd resistor
The first end of R3 couples, and the first end of drain D 2 and the 4th resistance R4 couple, substrate terminal S22 and the 6th resistance R6's
The second end of first end coupling, the second end of the 3rd resistor R3 and the 4th resistance R4 are coupled to second control signal
S02, the second end of the 5th resistance R5 are coupled to the first control signal S01, the second termination of the 6th resistance R6
Ground terminal GND.The first end of the 3rd resistor R3 in the switch unit 2031 adjacent with first block isolating circuit 201 also with
The input terminal IN2 of the switch device circuit 203 is coupled, in the switch unit 2031 adjacent with second block isolating circuit 202
The 4th resistance R4 first end also with the output end OUT2 of the switch device circuit 203 couple.
With continued reference to Fig. 4, in some embodiments, two adjacent switch units share a resistance.Specifically, adjacent
In two switch units 2031, the 4th resistance R4 of previous switch unit 2031 and the third electricity of the latter switch unit 2031
It hinders R3 and shares a resistance.
When the first control signal S01 is power supply signal, the second control signal S02 is ground signalling, circuit
In metal-oxide-semiconductor it is in the conductive state, the switching circuit 200 is opened.When the first control signal S01 is ground signalling, institute
When to state second control signal S02 be power supply signal, the metal-oxide-semiconductor in circuit is in an off state, and the switching circuit 200 is closed.
In some embodiments, the switching circuit 300 is equivalent to high power RF switch, may be used as duplexer.
The switching circuit 200 is moved back due to using the blocking unit 201 and 202, the insertion loss for reducing circuit
Change degree, reduces the area of capacitance, to reduce the area of entire switching circuit, and reduces the non-of metal-oxide-semiconductor
The linearity.
Capacitance, another implementation of the present invention are turned off in order to increase the shutdown resistance value of metal-oxide-semiconductor in block isolating circuit and reduce it
Example also provides a kind of block isolating circuit.Referring to FIG. 5, in block isolating circuit 300 shown in Fig. 5, two metal-oxide-semiconductor M1 and M3 series connection
It is in parallel with capacitor C1 again afterwards.The something in common of the block isolating circuit 300 and block isolating circuit 100 shown in Fig. 3 can refer to aforementioned
Content is not describing herein.
The difference of the block isolating circuit 300 and aforementioned block isolating circuit 100 is: the block isolating circuit 300 further includes the 7th
Resistance R7 and concatenated third metal-oxide-semiconductor M3, the 8th resistance R8 and the 9th resistance R9, the grid G 3 of the third metal-oxide-semiconductor and institute
State the first end coupling of the 8th resistance R8, the drain D 1 of source S 31 and the first metal-oxide-semiconductor M1 couple, drain D 3 and it is described every
The output end OUT1 coupling of straight circuit 100, the substrate terminal S32 of the first end of the 9th resistance R9 and the third metal-oxide-semiconductor M3
Coupling, second end ground connection, the second end of the 8th resistance R8 are coupled to the first control signal S01, the 7th resistance
The first end of R7 is coupled to the source S 31 of the third metal-oxide-semiconductor M3, and second end is coupled to second control signal S02.
In some embodiments, the first metal-oxide-semiconductor M1 and third metal-oxide-semiconductor M3 is NMOS tube.The first capacitor
The ratio of the capacitance of C1 and the shutdown capacitance of the first metal-oxide-semiconductor M1 or third metal-oxide-semiconductor M3 is greater than 8.
When the first control signal S01 is power supply signal, the first metal-oxide-semiconductor M1 is in the conductive state, and described the
Two control signal S02 are ground signalling.When the first control signal S01 is ground signalling, the first metal-oxide-semiconductor M1 and institute
It states third metal-oxide-semiconductor M3 to be in an off state, the second control signal S02 is power supply signal.
The block isolating circuit 300 not only has the advantages that above-mentioned block isolating circuit 100, also passes through first metal-oxide-semiconductor of connecting
The M1 and third metal-oxide-semiconductor M3, the shutdown resistance value of metal-oxide-semiconductor when increasing off-state, and shutdown capacitance is reduced, thus
The source-drain voltage for improving metal-oxide-semiconductor, improves the linearity of metal-oxide-semiconductor.
It should be noted that the present embodiment is illustrated so that block isolating circuit includes two metal-oxide-semiconductors as an example, other embodiments
In, the block isolating circuit can also include more than two metal-oxide-semiconductors.
Fig. 6 be another embodiment of the present invention provides a kind of switching circuit structural schematic diagram.Referring to FIG. 6, switch electricity
Road 400 includes two above-mentioned block isolating circuits and switch device circuit.Referring to FIG. 6, switching circuit 400 includes the first blocking electricity
Road 401, the second block isolating circuit 402 and switch device circuit 403.The switching circuit 400 is equivalent to a RF switch, when
When metal-oxide-semiconductor is in the conductive state, for transferring out input signal, when metal-oxide-semiconductor is in an off state, it to be used for isolation input
Signal prevents input signal from leaking out.
Block isolating circuit in the present embodiment, in first block isolating circuit 401 and second block isolating circuit 402 and Fig. 5
300 structures are identical.The detailed description of first block isolating circuit 401 and 402 structure of the second block isolating circuit can be referred to
Above to the description of the block isolating circuit 300 in Fig. 5, details are not described herein.
The switch device circuit 403 mainly includes switching device and driving resistance, is coupled to the first blocking electricity
Between road 401 and second block isolating circuit 402, wherein the input terminal IN2 of the switch device circuit 403 and described first
The output end OUT1 of block isolating circuit 401 is coupled, the output end OUT2 of the switch device circuit 403 and second block isolating circuit
402 output end OUT1 ' coupling.
In some embodiments, the switch device circuit includes at least one switch unit.
Referring to FIG. 6, the switch device circuit 403 includes multiple switch unit 4031 in the present embodiment.Each switch
Unit 4031 includes 3rd resistor R3, the 4th resistance R4 and concatenated second metal-oxide-semiconductor M2, the 5th resistance R5 and the 6th resistance
The grid G 2 of R6, the second metal-oxide-semiconductor M2 and the first end of the 5th resistance R5 couple, source S 21 and the 3rd resistor
The first end of R3 couples, and the first end of drain D 2 and the 4th resistance R4 couple, substrate terminal S22 and the 6th resistance R6's
The second end of first end coupling, the second end of the 3rd resistor R3 and the 4th resistance R4 are coupled to second control signal
S02, the second end of the 5th resistance R5 are coupled to the first control signal S01, the second termination of the 6th resistance R6
Ground terminal GND.The first end of the 3rd resistor R3 in the switch unit 4031 adjacent with first block isolating circuit 401 also with
The input terminal IN2 of the switch device circuit 403 is coupled, in the switch unit 4031 adjacent with second block isolating circuit 402
The 4th resistance R4 first end also with the output end OUT2 of the switch device circuit 403 couple.
With continued reference to Fig. 6, in some embodiments, two adjacent switch units share a resistance.Specifically, adjacent
In two switch units 4031, the 4th resistance R4 of previous switch unit 4031 and the third electricity of the latter switch unit 4031
It hinders R3 and shares a resistance.
When the first control signal S01 is power supply signal, the second control signal S02 is ground signalling, circuit
In metal-oxide-semiconductor it is in the conductive state, the switching circuit 400 is opened.When the first control signal S01 is ground signalling, institute
When to state second control signal S02 be power supply signal, the metal-oxide-semiconductor in circuit is in an off state, and the switching circuit 400 is closed.
In some embodiments, the switching circuit 300 may be used as duplexer.
Referring to FIG. 4, switching circuit 200 in off position when, the shutdown finite resistance of metal-oxide-semiconductor, due to the partial pressure of resistance,
The voltage of the input terminal IN2 and output end OUT2 of switch unit have certain reduction, so that the linearity of metal-oxide-semiconductor can be reduced,
Increase the harmonic power of circuit.
In the present embodiment, switching circuit 400 shown in fig. 6 not only has the advantages that aforementioned switches circuit 200, also by
First metal-oxide-semiconductor M1 and third metal-oxide-semiconductor M3 is connected in first block isolating circuit 401, by the first MOS in the second block isolating circuit 402
Pipe M1 ' and third metal-oxide-semiconductor M3 ' series connection, increases the shutdown resistance value of the metal-oxide-semiconductor in 400 closed state of switching circuit, and reduce
Shutdown capacitance so as to improve the source-drain voltage of metal-oxide-semiconductor improves the linearity of metal-oxide-semiconductor, reduces the harmonic power of circuit.
Fig. 7 is the insertion loss of switching circuit 400 shown in the insertion loss and Fig. 6 of existing dual-supply voltage switching circuit
Contrast schematic diagram.Fig. 8 be existing dual-supply voltage switching circuit harmonic power and Fig. 6 shown in switching circuit 400 it is humorous
The contrast schematic diagram of wave power.
From figure 7 it can be seen that the insertion loss of switching circuit provided in an embodiment of the present invention is than existing dual-supply voltage
The insertion loss of switching circuit only have dropped 0.1dB, i.e. degree of degeneration is smaller.It is found that institute of the embodiment of the present invention compared with Fig. 2
Degree of degeneration of the degree of degeneration of the switching circuit insertion loss of offer than existing single-power voltage switching circuit insertion loss
Much smaller, i.e., switching circuit provided in an embodiment of the present invention reduces insertion loss on the basis of low in energy consumption, structure is simple
Degree of degeneration.
From figure 8, it is seen that the second-harmonic power and triple-frequency harmonics power of switching circuit provided in an embodiment of the present invention
Suitable with the second-harmonic power of the switching circuit of existing dual-supply voltage and triple-frequency harmonics power, i.e., harmonic linear degree is almost
Do not degenerate.
Although the invention has been described by way of example and in terms of the preferred embodiments, but it is not for limiting the present invention, any this field
Technical staff without departing from the spirit and scope of the present invention, may be by the methods and technical content of the disclosure above to this hair
Bright technical solution makes possible variation and modification, therefore, anything that does not depart from the technical scheme of the invention, and according to the present invention
Technical spirit any simple modifications, equivalents, and modifications to the above embodiments, belong to technical solution of the present invention
Protection scope.
Claims (8)
1. a kind of block isolating circuit is used for blocking direct current biasing, which is characterized in that the block isolating circuit includes concatenated first MOS
Pipe, first resistor and second resistance, 3rd resistor, concatenated second metal-oxide-semiconductor, the 4th resistance and the 5th resistance, and be parallel to
The capacitor of the drain electrode of the source electrode of first metal-oxide-semiconductor and second metal-oxide-semiconductor,
The grid of first metal-oxide-semiconductor and the first end of the first resistor couple, the input terminal of source electrode and the block isolating circuit,
The first end of the capacitor couples, and the substrate terminal of the first end of the second resistance and first metal-oxide-semiconductor couples, the second termination
The second end on ground, the first resistor is coupled to first control signal, described when the first control signal is power supply signal
First metal-oxide-semiconductor is in the conductive state,
The first end of the grid of second metal-oxide-semiconductor and the 4th resistance couples, the drain electrode coupling of source electrode and first metal-oxide-semiconductor
Connect, drain electrode and the second end of the output end of the block isolating circuit, the capacitor couple, the first end of the 5th resistance with it is described
The substrate terminal of second metal-oxide-semiconductor couples, and second end ground connection, the second end of the 4th resistance is coupled to the first control signal,
The first end of the 3rd resistor is coupled to the source electrode of second metal-oxide-semiconductor, and second end is coupled to second control signal, when described
When the first metal-oxide-semiconductor and second metal-oxide-semiconductor in the conductive state, the second control signal is ground signalling.
2. block isolating circuit as described in claim 1, which is characterized in that when the first control signal is ground signalling, institute
The first metal-oxide-semiconductor is stated to be in an off state.
3. block isolating circuit as described in claim 1, which is characterized in that when the first control signal is ground signalling, institute
It states the first metal-oxide-semiconductor and second metal-oxide-semiconductor is in an off state, the second control signal is power supply signal.
4. block isolating circuit as described in claim 1, which is characterized in that the capacitance of the capacitor and first metal-oxide-semiconductor
The ratio for turning off capacitance is greater than 8.
5. block isolating circuit as described in claim 1, which is characterized in that the capacitance of the capacitor and second metal-oxide-semiconductor
The ratio for turning off capacitance is greater than 8.
6. a kind of switching circuit characterized by comprising
Two block isolating circuits as described in claim 1；And
The output end of switch device circuit, the input terminal of the switch device circuit and the first block isolating circuit couples, described
The coupling of the output end of the output end of switch device circuit and the second block isolating circuit.
7. switching circuit as claimed in claim 6, which is characterized in that the switch device circuit includes that at least one switch is single
Member, the switch unit include the 6th resistance, the 7th resistance and concatenated third metal-oxide-semiconductor, the 8th resistance and the 9th resistance, institute
The first end of the grid and the 8th resistance of stating third metal-oxide-semiconductor couples, and the first end of source electrode and the 6th resistance couples, leakage
The first end of pole and the 7th resistance couples, and the first end of substrate terminal and the 9th resistance couples, the 6th resistance
Second end and the second end of the 7th resistance are coupled to the second control signal, and the second end of the 8th resistance is coupled to
The first control signal, the second end ground connection of the 9th resistance, wherein the switch list adjacent with the first block isolating circuit
The first end of the 6th resistance in member is also coupled with the input terminal of the switch device circuit, with the second block isolating circuit
The first end of the 7th resistance in adjacent switch unit is also coupled with the output end of the switch device circuit.
8. switching circuit as claimed in claim 7, which is characterized in that the switch device circuit includes multiple switch unit,
In two adjacent switch units, the 7th resistance of previous switch unit and the 6th resistance of the latter switch unit share one
A resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511025143.9A CN105553455B (en) | 2015-12-30 | 2015-12-30 | A kind of block isolating circuit and a kind of switching circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511025143.9A CN105553455B (en) | 2015-12-30 | 2015-12-30 | A kind of block isolating circuit and a kind of switching circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105553455A CN105553455A (en) | 2016-05-04 |
| CN105553455B true CN105553455B (en) | 2019-03-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201511025143.9A Active CN105553455B (en) | 2015-12-30 | 2015-12-30 | A kind of block isolating circuit and a kind of switching circuit |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1870433A (en) * | 2005-05-23 | 2006-11-29 | 松下电器产业株式会社 | Radio frequency switching circuit and semiconductor device including the same |
| CN102474251A (en) * | 2009-07-30 | 2012-05-23 | 高通股份有限公司 | Switches with bias resistors for even voltage distribution |
| CN103812481A (en) * | 2012-11-09 | 2014-05-21 | 台湾积体电路制造股份有限公司 | Switch circuit and method of operating the switch circuit |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007096609A (en) * | 2005-09-28 | 2007-04-12 | Nec Electronics Corp | Semiconductor switch circuit device |
| US7848712B2 (en) * | 2007-05-03 | 2010-12-07 | Intel Corporation | CMOS RF switch for high-performance radio systems |
| US9124265B2 (en) * | 2011-07-13 | 2015-09-01 | Peregrine Semiconductor Corporation | Method and apparatus for transistor switch isolation |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1870433A (en) * | 2005-05-23 | 2006-11-29 | 松下电器产业株式会社 | Radio frequency switching circuit and semiconductor device including the same |
| CN102474251A (en) * | 2009-07-30 | 2012-05-23 | 高通股份有限公司 | Switches with bias resistors for even voltage distribution |
| CN103812481A (en) * | 2012-11-09 | 2014-05-21 | 台湾积体电路制造股份有限公司 | Switch circuit and method of operating the switch circuit |
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| CN105553455A (en) | 2016-05-04 |
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