CN105553455A - Direct current blocking circuit and switching circuit - Google Patents
Direct current blocking circuit and switching circuit Download PDFInfo
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- CN105553455A CN105553455A CN201511025143.9A CN201511025143A CN105553455A CN 105553455 A CN105553455 A CN 105553455A CN 201511025143 A CN201511025143 A CN 201511025143A CN 105553455 A CN105553455 A CN 105553455A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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Abstract
The invention relates to a direct current blocking circuit and a switching circuit; the direct current blocking circuit is used for blocking a direct current bias; the direct current blocking circuit comprises a first MOS (Metal Oxide Semiconductor) tube, a first resistor, a second resistor and a first capacitor, wherein the first MOS tube, the first resistor and the second resistor are in serial connection; the first capacitor is in parallel connection with the first MOS tube; the grid electrode of the first MOS tube is coupled to the first end of the first resistor, the source electrode of the first MOS tube is coupled to the input end of the direct current blocking circuit and the first end of the first capacitor, and the drain electrode of the first MOS tube and the second end of the first capacitor are coupled to the output end of the direct current blocking circuit; the first end of the second resistor is coupled to the substrate end of the first MOS tube, and the second end of the second resistor is grounded; the second end of the first resistor is coupled to a first control signal; and when the first control signal is a power signal, the first MOS tube is in a conducting state. According to the direct current blocking circuit and the switching circuit disclosed by the invention, on the basis of keeping no degradation of the high-power linearity and the simple structure, the circuit area is decreased, and the degradation degree of insertion loss is reduced.
Description
Technical field
The present invention relates to technical field of integrated circuits, particularly relate to a kind of block isolating circuit and a kind of switching circuit.
Background technology
Traditional switching circuit, such as antenna switch circuit, adopt negative and positive dual power voltage to carry out drived control switch, thus obtain the good high power linearity.But the generation circuit structure of negative supply voltage is comparatively complicated, power consumption is comparatively large, produces the performance of the interference effect switches such as noise simultaneously.
Along with the development of circuit engineering, switching circuit can only adopt positive voltage to carry out drived control switch.Fig. 1 shows the structural representation of the switching circuit only adopting positive voltage in prior art.Its type of drive with utilize the switching circuit of negative and positive dual power voltage similar, namely the high power linearity remains unchanged, and structure is relatively simple, power consumption is lower.As shown in Figure 1, make still can driving switch under the condition only having positive voltage by introducing capacitance for this circuit.But capacitance can bring insertion loss largely to degenerate.Reduce the degree of degeneration of insertion loss if want, capacitance needs to have larger capacitance.Fig. 2 shows the correlation curve figure of insertion loss in the switching circuit of the single-power voltage of insertion loss and introducing capacitance in the switching circuit of traditional dual-supply voltage.Can see, introduce insertion loss in the circuit of capacitance and there is degradation phenomena, and capacitance value is less, insertion loss degree of degeneration is more serious.In prior art, in order to avoid insertion loss largely, need the area by increasing capacitance to increase capacitance, thus cause circuit area to become large, cost increases.
Summary of the invention
The technical problem that technical solution of the present invention solves is: how not degenerate in the maintenance high power linearity and on the simple basis of structure, to reduce circuit area, and reduce the degree of degeneration of insertion loss.
In order to solve the problems of the technologies described above, technical solution of the present invention provides a kind of block isolating circuit, for every straight direct current biasing, described block isolating circuit comprises the first metal-oxide-semiconductor of series connection, first resistance and the second resistance, and the electric capacity in parallel with described first metal-oxide-semiconductor, the grid of described first metal-oxide-semiconductor and the first end of described first resistance couple, the input of source electrode and described block isolating circuit, the first end of described electric capacity couples, second end of drain electrode and described electric capacity is coupled to the output of described block isolating circuit, the first end of described second resistance and the substrate terminal of described first metal-oxide-semiconductor couple, second end ground connection, second end of described first resistance is coupled to the first control signal, when described first control signal is power supply signal, described first metal-oxide-semiconductor is in conducting state.
Alternatively, when described first control signal is ground signalling, described first metal-oxide-semiconductor is in off-state.
Alternatively, described block isolating circuit also comprises: the second metal-oxide-semiconductor of the 3rd resistance and series connection, 4th resistance and the 5th resistance, the grid of described second metal-oxide-semiconductor and the first end of described 4th resistance couple, the drain electrode of source electrode and described first metal-oxide-semiconductor couples, drain electrode couples with the output of described block isolating circuit, the first end of described 5th resistance and the substrate terminal of described second metal-oxide-semiconductor couple, second end ground connection, second end of described 4th resistance is coupled to described first control signal, the first end of described 3rd resistance is coupled to the source electrode of described second metal-oxide-semiconductor, second end is coupled to the second control signal, when described first metal-oxide-semiconductor and described second metal-oxide-semiconductor are in conducting state, described second control signal is ground signalling.
Alternatively, when described first control signal be ground signalling, described second control signal be power supply signal time, described first metal-oxide-semiconductor and described second metal-oxide-semiconductor are in off-state.
Alternatively, the ratio of the capacitance of described electric capacity and the shutoff capacitance of described first metal-oxide-semiconductor is greater than 8.
Alternatively, the ratio of the capacitance of described electric capacity and the shutoff capacitance of described second metal-oxide-semiconductor is greater than 8.
Alternatively, described metal-oxide-semiconductor is NMOS tube.
Technical solution of the present invention additionally provides a kind of switching circuit, comprising: two described block isolating circuits; And switch device circuit, described in the input of described switch device circuit and first, the output of block isolating circuit couples, and described in the output of described switch device circuit and second, the output of block isolating circuit couples.
Alternatively, described switch device circuit comprises at least one switch element, described switch element comprises the 6th resistance, 3rd metal-oxide-semiconductor of the 7th resistance and series connection, 8th resistance and the 9th resistance, the grid of described 3rd metal-oxide-semiconductor and the first end of described 8th resistance couple, the first end of source electrode and described 6th resistance couples, drain electrode couples with the first end of described 7th resistance, the first end of substrate terminal and described 9th resistance couples, second end of described 6th resistance and the second end of described 7th resistance are coupled to the second control signal, second end of described 8th resistance is coupled to described first control signal, second end ground connection of described 9th resistance, wherein, the first end of described 6th resistance in the switch element adjacent with block isolating circuit described in first also couples with the input of described switch device circuit, the first end of described 7th resistance in the switch element adjacent with block isolating circuit described in second also couples with the output of described switch device circuit.
Alternatively, described switch device circuit comprises multiple switch element, and in two adjacent switch elements, the 7th resistance of previous switch element and the 6th resistance of a rear switch element share a resistance.
Alternatively, described block isolating circuit also comprises: the second metal-oxide-semiconductor of the 3rd resistance and series connection, 4th resistance and the 5th resistance, the grid of described second metal-oxide-semiconductor and the first end of described 4th resistance couple, the drain electrode of source electrode and described first metal-oxide-semiconductor couples, drain electrode couples with the output of described block isolating circuit, the first end of described 5th resistance and the substrate terminal of described second metal-oxide-semiconductor couple, second end ground connection, second end of described 4th resistance is coupled to described first control signal, the first end of described 3rd resistance is coupled to the source electrode of described second metal-oxide-semiconductor, second end is coupled to the second control signal, when described first metal-oxide-semiconductor and described second metal-oxide-semiconductor are in conducting state, described second control signal is ground signalling.
Alternatively, when described first control signal be ground signalling, described second control signal be power supply signal time, described first metal-oxide-semiconductor and described second metal-oxide-semiconductor are in off-state.
Technical solution of the present invention at least comprises following technique effect.
The block isolating circuit that the embodiment of the present invention provides, by by the first metal-oxide-semiconductor and Capacitance parallel connection, reduces block isolating circuit conduction impedance, reduces the degree of degeneration of circuit insertion loss.And described electric capacity does not need to have larger capacitance, thus reduces capacity area, correspondingly reduces the area of block isolating circuit.
Further, described block isolating circuit will after at least two metal-oxide-semiconductors series connection again with described Capacitance parallel connection, add the shutoff resistance value of metal-oxide-semiconductor during off-state, and reduce shutoff capacitance, thus improve the source-drain voltage of metal-oxide-semiconductor, improve the linearity of metal-oxide-semiconductor.
Correspondingly, the switching circuit that the embodiment of the present invention provides also has above-mentioned advantage.On low in energy consumption, the simple basis of structure, reduce the degree of degeneration of insertion loss, reduce capacity area, correspondingly reduce the area of block isolating circuit, and harmonic linear degree is not almost degenerated.
Accompanying drawing explanation
The structural representation of a kind of switching circuit that Fig. 1 provides for prior art;
Fig. 2 is the contrast schematic diagram of the insertion loss of the insertion loss of the switching circuit of existing dual-supply voltage and the switching circuit of existing single-power voltage;
The structural representation of a kind of block isolating circuit that Fig. 3 provides for one embodiment of the invention;
The structural representation of a kind of switching circuit that Fig. 4 provides for one embodiment of the invention;
The structural representation of a kind of block isolating circuit that Fig. 5 provides for another embodiment of the present invention;
The structural representation of a kind of switching circuit that Fig. 6 provides for another embodiment of the present invention;
The contrast schematic diagram of the insertion loss of the switching circuit shown in the insertion loss that Fig. 7 is existing dual-supply voltage switching circuit and Fig. 6;
The contrast schematic diagram of the harmonic power of the switching circuit shown in the harmonic power that Fig. 8 is existing dual-supply voltage switching circuit and Fig. 6.
Embodiment
From background technology, in the single-power voltage switching circuit of prior art, insertion loss degree of degeneration is comparatively serious, and circuit area is larger.
The present inventor have studied the single-power voltage switching circuit of prior art, find that capacitance wherein can bring insertion loss largely to degenerate, in order to reduce the degree of degeneration of insertion loss, the area of capacitance need be increased, thus cause circuit area to increase.
The embodiment of the present invention proposes a kind of block isolating circuit, adopts metal-oxide-semiconductor and Capacitance parallel connection to come every straight direct current biasing, compared with only adopting the scheme of electric capacity, reduces capacitance and the area of capacitance.
In order to enable object of the present invention, characteristic sum effect becomes apparent more, elaborates to the specific embodiment of the present invention below in conjunction with accompanying drawing.
It should be noted that, provide the object of these accompanying drawings to be contribute to understanding embodiments of the invention, and should not be construed as and limit improperly of the present invention.For the purpose of clearer, size shown in figure not drawn on scale, may make and amplify, to reduce or other change.Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from other modes described here to be implemented, therefore the present invention is not by the restriction of following public specific embodiment.
One embodiment of the invention provides a kind of block isolating circuit.Please refer to Fig. 3, block isolating circuit 100 is for every straight direct current biasing.Described block isolating circuit 100 comprises input IN1, output OUT1, the first metal-oxide-semiconductor M1, the first resistance R1 of series connection and the second resistance R2, and the first electric capacity C1 in parallel with described first metal-oxide-semiconductor M1.The signal that described input IN1 inputs and the signal that described output OUT1 exports are radiofrequency signal, and the information of concrete radiofrequency signal is relevant with the communication protocol in practical application and modulation system.
Particularly, the grid G 1 of described first metal-oxide-semiconductor M1 couples with the first end of described first resistance R1, source S 11 couples with the first end of described input IN1, described first electric capacity C1, second end of drain D 1 and described first electric capacity C1 is coupled to the output OUT1 of described block isolating circuit 100, the first end of described second resistance R2 and the substrate terminal S12 of described first metal-oxide-semiconductor M1 couple, second end earth terminal GND, second end of described first resistance R1 is coupled to the first control signal S01.
When described first control signal S01 is power supply signal, described first metal-oxide-semiconductor M1 is in conducting state.Now, the conducting resistance of described first metal-oxide-semiconductor M1 is in parallel with the low-frequency high-impedance of described first electric capacity C1, compared with only adopting the scheme of capacitance, reduces impedance, reduces the insertion loss degree of degeneration of circuit.Further, described first electric capacity C1 does not need to have larger capacitance, reduces capacity area, correspondingly reduces the area of block isolating circuit.
In some embodiment, the ratio of the capacitance of described first electric capacity C1 and the shutoff capacitance of described first metal-oxide-semiconductor M1 is greater than 8.When described first control signal S01 is ground signalling, described first metal-oxide-semiconductor M1 is in off-state.Now, because the capacitance of described first electric capacity C1 is much larger than the shutoff capacitance of described first metal-oxide-semiconductor M1, it is non-linear that the low-voltage reducing the source S11 of described first metal-oxide-semiconductor M1 causes.
In some embodiments, described metal-oxide-semiconductor is NMOS tube.
One embodiment of the invention additionally provides a kind of switching circuit, comprises two above-mentioned block isolating circuits and switch device circuit.Please refer to Fig. 4, switching circuit 200 comprises the first block isolating circuit 201, second block isolating circuit 202 and switch device circuit 203.Described switching circuit 200 is equivalent to a radio-frequency (RF) switch, when metal-oxide-semiconductor is in conducting state, for being transferred out by input signal, when metal-oxide-semiconductor is in off-state, for Isolation input signal, prevents input signal from leaking out.
In the present embodiment, described first block isolating circuit 201 is identical with block isolating circuit 100 structure in Fig. 3 with described second block isolating circuit 202.The detailed description of described first block isolating circuit 201 and described second block isolating circuit 202 structure with reference to above to the description of the block isolating circuit 100 in Fig. 3, can not repeated them here.
Described switch device circuit 203 mainly comprises switching device and drives resistance, it is coupled between described first block isolating circuit 201 and described second block isolating circuit 202, wherein, the input IN2 of described the switch device circuit 203 and output OUT1 of described first block isolating circuit 201 couples, and the output OUT2 of described the switch device circuit 203 and output OUT1 ' of described second block isolating circuit 202 couples.
In some embodiment, described switch device circuit comprises at least one switch element.
Please refer to Fig. 4, in the present embodiment, described switch device circuit 203 comprises multiple switch element 2031.Each switch element 2031 comprises the 3rd resistance R3, second metal-oxide-semiconductor M2 of the 4th resistance R4 and series connection, 5th resistance R5 and the 6th resistance R6, the grid G 2 of described second metal-oxide-semiconductor M2 couples with the first end of described 5th resistance R5, source S 21 couples with the first end of described 3rd resistance R3, drain D 2 couples with the first end of described 4th resistance R4, the first end of substrate terminal S22 and described 6th resistance R6 couples, second end of described 3rd resistance R3 and second end of described 4th resistance R4 are coupled to the second control signal S02, second end of described 5th resistance R5 is coupled to described first control signal S01, the second end earth terminal GND of described 6th resistance R6.The first end of the described 3rd resistance R3 in the switch element 2031 adjacent with described first block isolating circuit 201 also couples with the input IN2 of described switch device circuit 203, and the first end of the described 4th resistance R4 in the switch element 2031 adjacent with described second block isolating circuit 202 also couples with the output OUT2 of described switch device circuit 203.
Continue with reference to figure 4, in some embodiment, two adjacent switch elements share a resistance.Particularly, in two adjacent switch elements 2031, the 4th resistance R4 of previous switch element 2031 and the 3rd resistance R3 of a rear switch element 2031 shares a resistance.
When described first control signal S01 be power supply signal, described second control signal S02 be ground signalling time, the metal-oxide-semiconductor in circuit is in conducting state, and described switching circuit 200 is opened.When described first control signal S01 be ground signalling, described second control signal S02 be power supply signal time, the metal-oxide-semiconductor in circuit is in off-state, and described switching circuit 200 cuts out.
In some embodiments, described switching circuit 300 is equivalent to high power RF switch, can be used as duplexer.
Described switching circuit 200 is described every straight unit 201 and 202 owing to have employed, and reduces the insertion loss degree of degeneration of circuit, reduces the area of capacitance, thus reduce the area of whole switching circuit, and reduce the nonlinearity of metal-oxide-semiconductor.
In order to increase the shutoff resistance value of metal-oxide-semiconductor in block isolating circuit and reduce its shutoff capacitance, another embodiment of the present invention also provides a kind of block isolating circuit.Please refer to Fig. 5, in the block isolating circuit 300 shown in Fig. 5, in parallel with electric capacity C1 again after two metal-oxide-semiconductor M1 and M3 connect.Described block isolating circuit 300 with reference to foregoing teachings, can not describe at this with the something in common of the block isolating circuit 100 shown in Fig. 3.
Described block isolating circuit 300 is with the difference of aforementioned block isolating circuit 100: the 3rd metal-oxide-semiconductor M3 that described block isolating circuit 300 also comprises the 7th resistance R7 and connects, 8th resistance R8 and the 9th resistance R9, the grid G 3 of described 3rd metal-oxide-semiconductor couples with the first end of described 8th resistance R8, source S 31 couples with the drain D 1 of described first metal-oxide-semiconductor M1, drain D 3 couples with the output OUT1 of described block isolating circuit 100, the first end of described 9th resistance R9 and the substrate terminal S32 of described 3rd metal-oxide-semiconductor M3 couple, second end ground connection, second end of described 8th resistance R8 is coupled to described first control signal S01, the first end of described 7th resistance R7 is coupled to the source S 31 of described 3rd metal-oxide-semiconductor M3, second end is coupled to the second control signal S02.
In some embodiments, described first metal-oxide-semiconductor M1 and described 3rd metal-oxide-semiconductor M3 is NMOS tube.The ratio of the capacitance of described first electric capacity C1 and the shutoff capacitance of described first metal-oxide-semiconductor M1 or described 3rd metal-oxide-semiconductor M3 is greater than 8.
When described first control signal S01 is power supply signal, described first metal-oxide-semiconductor M1 is in conducting state, and described second control signal S02 is ground signalling.When described first control signal S01 is ground signalling, described first metal-oxide-semiconductor M1 and described 3rd metal-oxide-semiconductor M3 is in off-state, and described second control signal S02 is power supply signal.
Described block isolating circuit 300 not only has the advantage of above-mentioned block isolating circuit 100, also by series connection described first metal-oxide-semiconductor M1 and described 3rd metal-oxide-semiconductor M3, add the shutoff resistance value of metal-oxide-semiconductor during off-state, and reduce shutoff capacitance, thus improve the source-drain voltage of metal-oxide-semiconductor, improve the linearity of metal-oxide-semiconductor.
It should be noted that the present embodiment comprises two metal-oxide-semiconductors for block isolating circuit and is illustrated, in other embodiments, described block isolating circuit can also comprise plural metal-oxide-semiconductor.
The structural representation of a kind of switching circuit that Fig. 6 provides for another embodiment of the present invention.Please refer to Fig. 6, switching circuit 400 comprises two above-mentioned block isolating circuits and switch device circuit.Please refer to Fig. 6, switching circuit 400 comprises the first block isolating circuit 401, second block isolating circuit 402 and switch device circuit 403.Described switching circuit 400 is equivalent to a radio-frequency (RF) switch, when metal-oxide-semiconductor is in conducting state, for being transferred out by input signal, when metal-oxide-semiconductor is in off-state, for Isolation input signal, prevents input signal from leaking out.
In the present embodiment, described first block isolating circuit 401 is identical with block isolating circuit 300 structure in Fig. 5 with described second block isolating circuit 402.The detailed description of described first block isolating circuit 401 and described second block isolating circuit 402 structure with reference to above to the description of the block isolating circuit 300 in Fig. 5, can not repeated them here.
Described switch device circuit 403 mainly comprises switching device and drives resistance, it is coupled between described first block isolating circuit 401 and described second block isolating circuit 402, wherein, the input IN2 of described the switch device circuit 403 and output OUT1 of described first block isolating circuit 401 couples, and the output OUT2 of described the switch device circuit 403 and output OUT1 ' of described second block isolating circuit 402 couples.
In some embodiment, described switch device circuit comprises at least one switch element.
Please refer to Fig. 6, in the present embodiment, described switch device circuit 403 comprises multiple switch element 4031.Each switch element 4031 comprises the 3rd resistance R3, second metal-oxide-semiconductor M2 of the 4th resistance R4 and series connection, 5th resistance R5 and the 6th resistance R6, the grid G 2 of described second metal-oxide-semiconductor M2 couples with the first end of described 5th resistance R5, source S 21 couples with the first end of described 3rd resistance R3, drain D 2 couples with the first end of described 4th resistance R4, the first end of substrate terminal S22 and described 6th resistance R6 couples, second end of described 3rd resistance R3 and second end of described 4th resistance R4 are coupled to the second control signal S02, second end of described 5th resistance R5 is coupled to described first control signal S01, the second end earth terminal GND of described 6th resistance R6.The first end of the described 3rd resistance R3 in the switch element 4031 adjacent with described first block isolating circuit 401 also couples with the input IN2 of described switch device circuit 403, and the first end of the described 4th resistance R4 in the switch element 4031 adjacent with described second block isolating circuit 402 also couples with the output OUT2 of described switch device circuit 403.
Continue with reference to figure 6, in some embodiment, two adjacent switch elements share a resistance.Particularly, in two adjacent switch elements 4031, the 4th resistance R4 of previous switch element 4031 and the 3rd resistance R3 of a rear switch element 4031 shares a resistance.
When described first control signal S01 be power supply signal, described second control signal S02 be ground signalling time, the metal-oxide-semiconductor in circuit is in conducting state, and described switching circuit 400 is opened.When described first control signal S01 be ground signalling, described second control signal S02 be power supply signal time, the metal-oxide-semiconductor in circuit is in off-state, and described switching circuit 400 cuts out.In some embodiment, described switching circuit 300 can be used as duplexer.
Please refer to Fig. 4, switching circuit 200 in off position time, the shutoff finite resistance of metal-oxide-semiconductor, due to the dividing potential drop of resistance, the input IN2 of switch element and the voltage of output OUT2 have certain reduction, thus can reduce the linearity of metal-oxide-semiconductor, increase the harmonic power of circuit.
In the present embodiment, switching circuit 400 shown in Fig. 6 not only has the advantage of aforementioned switches circuit 200, also by first metal-oxide-semiconductor M1 and the 3rd metal-oxide-semiconductor M3 being connected in the first block isolating circuit 401, in the second block isolating circuit 402, first metal-oxide-semiconductor M1 ' and the 3rd metal-oxide-semiconductor M3 ' is connected, add the shutoff resistance value of the metal-oxide-semiconductor when switching circuit 400 closed condition, and reduce shutoff capacitance, thus improve the source-drain voltage of metal-oxide-semiconductor, improve the linearity of metal-oxide-semiconductor, reduce the harmonic power of circuit.
The contrast schematic diagram of the insertion loss of switching circuit 400 shown in the insertion loss that Fig. 7 is existing dual-supply voltage switching circuit and Fig. 6.The contrast schematic diagram of the harmonic power of switching circuit 400 shown in the harmonic power that Fig. 8 is existing dual-supply voltage switching circuit and Fig. 6.
As can be seen from Figure 7, the insertion loss of the switching circuit that the embodiment of the present invention provides only have dropped 0.1dB than the insertion loss of the switching circuit of existing dual-supply voltage, and namely degree of degeneration is less.Known compared with Fig. 2, the degree of degeneration of the switching circuit insertion loss that the embodiment of the present invention provides is more much smaller than the degree of degeneration of existing single-power voltage switching circuit insertion loss, namely the switching circuit that provides of the embodiment of the present invention is on low in energy consumption, the simple basis of structure, reduces the degree of degeneration of insertion loss.
As can be seen from Figure 8, quite, namely harmonic linear degree is not almost degenerated for the second-harmonic power of the second-harmonic power of the switching circuit that the embodiment of the present invention provides and the switching circuit of triple-frequency harmonics power and existing dual-supply voltage and triple-frequency harmonics power.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; the Method and Technology content of above-mentioned announcement can be utilized to make possible variation and amendment to technical solution of the present invention; therefore; every content not departing from technical solution of the present invention; the any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all belong to the protection range of technical solution of the present invention.
Claims (10)
1. a block isolating circuit, for every straight direct current biasing, is characterized in that, described block isolating circuit comprises the first metal-oxide-semiconductor of series connection, the first resistance and the second resistance, and the electric capacity in parallel with described first metal-oxide-semiconductor,
The grid of described first metal-oxide-semiconductor and the first end of described first resistance couple, the input of source electrode and described block isolating circuit, the first end of described electric capacity couple, second end of drain electrode and described electric capacity is coupled to the output of described block isolating circuit, the first end of described second resistance and the substrate terminal of described first metal-oxide-semiconductor couple, second end ground connection, second end of described first resistance is coupled to the first control signal, when described first control signal is power supply signal, described first metal-oxide-semiconductor is in conducting state.
2. block isolating circuit as claimed in claim 1, it is characterized in that, when described first control signal is ground signalling, described first metal-oxide-semiconductor is in off-state.
3. block isolating circuit as claimed in claim 1, it is characterized in that, described block isolating circuit also comprises: the second metal-oxide-semiconductor of the 3rd resistance and series connection, the 4th resistance and the 5th resistance,
The grid of described second metal-oxide-semiconductor and the first end of described 4th resistance couple, the drain electrode of source electrode and described first metal-oxide-semiconductor couples, drain electrode couples with the output of described block isolating circuit, the first end of described 5th resistance and the substrate terminal of described second metal-oxide-semiconductor couple, second end ground connection, second end of described 4th resistance is coupled to described first control signal, the first end of described 3rd resistance is coupled to the source electrode of described second metal-oxide-semiconductor, second end is coupled to the second control signal, when described first metal-oxide-semiconductor and described second metal-oxide-semiconductor are in conducting state, described second control signal is ground signalling.
4. block isolating circuit as claimed in claim 3, it is characterized in that, when described first control signal is ground signalling, described first metal-oxide-semiconductor and described second metal-oxide-semiconductor are in off-state, and described second control signal is power supply signal.
5. block isolating circuit as claimed in claim 1, it is characterized in that, the ratio of the capacitance of described electric capacity and the shutoff capacitance of described first metal-oxide-semiconductor is greater than 8.
6. block isolating circuit as claimed in claim 3, it is characterized in that, the ratio of the capacitance of described electric capacity and the shutoff capacitance of described second metal-oxide-semiconductor is greater than 8.
7. a switching circuit, is characterized in that, comprising:
Two block isolating circuits as claimed in claim 1; And
Switch device circuit, described in the input of described switch device circuit and first, the output of block isolating circuit couples, and described in the output of described switch device circuit and second, the output of block isolating circuit couples.
8. switching circuit as claimed in claim 7, it is characterized in that, described switch device circuit comprises at least one switch element, described switch element comprises the 6th resistance, 3rd metal-oxide-semiconductor of the 7th resistance and series connection, 8th resistance and the 9th resistance, the grid of described 3rd metal-oxide-semiconductor and the first end of described 8th resistance couple, the first end of source electrode and described 6th resistance couples, drain electrode couples with the first end of described 7th resistance, the first end of substrate terminal and described 9th resistance couples, second end of described 6th resistance and the second end of described 7th resistance are coupled to the second control signal, second end of described 8th resistance is coupled to described first control signal, second end ground connection of described 9th resistance, wherein, the first end of described 6th resistance in the switch element adjacent with block isolating circuit described in first also couples with the input of described switch device circuit, the first end of described 7th resistance in the switch element adjacent with block isolating circuit described in second also couples with the output of described switch device circuit.
9. switching circuit as claimed in claim 8, it is characterized in that, described switch device circuit comprises multiple switch element, and in two adjacent switch elements, the 7th resistance of previous switch element and the 6th resistance of a rear switch element share a resistance.
10. switching circuit as claimed in claim 7, it is characterized in that, described block isolating circuit also comprises: the second metal-oxide-semiconductor of the 3rd resistance and series connection, 4th resistance and the 5th resistance, the grid of described second metal-oxide-semiconductor and the first end of described 4th resistance couple, the drain electrode of source electrode and described first metal-oxide-semiconductor couples, drain electrode couples with the output of described block isolating circuit, the first end of described 5th resistance and the substrate terminal of described second metal-oxide-semiconductor couple, second end ground connection, second end of described 4th resistance is coupled to described first control signal, the first end of described 3rd resistance is coupled to the source electrode of described second metal-oxide-semiconductor, second end is coupled to the second control signal, when described first metal-oxide-semiconductor and described second metal-oxide-semiconductor are in conducting state, described second control signal is ground signalling.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511025143.9A CN105553455B (en) | 2015-12-30 | 2015-12-30 | A kind of block isolating circuit and a kind of switching circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511025143.9A CN105553455B (en) | 2015-12-30 | 2015-12-30 | A kind of block isolating circuit and a kind of switching circuit |
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| Publication Number | Publication Date |
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| CN105553455A true CN105553455A (en) | 2016-05-04 |
| CN105553455B CN105553455B (en) | 2019-03-19 |
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| CN201511025143.9A Active CN105553455B (en) | 2015-12-30 | 2015-12-30 | A kind of block isolating circuit and a kind of switching circuit |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1870433A (en) * | 2005-05-23 | 2006-11-29 | 松下电器产业株式会社 | Radio frequency switching circuit and semiconductor device including the same |
| US20070069798A1 (en) * | 2005-09-28 | 2007-03-29 | Nec Electronics Corporation | Switch circuit for high-frequency-signal switching |
| US20080272824A1 (en) * | 2007-05-03 | 2008-11-06 | Chang-Tsung Fu | CMOS RF switch for high-performance radio systems |
| CN102474251A (en) * | 2009-07-30 | 2012-05-23 | 高通股份有限公司 | Switches with bias resistors for even voltage distribution |
| US20130015717A1 (en) * | 2011-07-13 | 2013-01-17 | Dykstra Jeffrey A | Method and Apparatus for Transistor Switch Isolation |
| CN103812481A (en) * | 2012-11-09 | 2014-05-21 | 台湾积体电路制造股份有限公司 | Switch circuit and method of operating the switch circuit |
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2015
- 2015-12-30 CN CN201511025143.9A patent/CN105553455B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1870433A (en) * | 2005-05-23 | 2006-11-29 | 松下电器产业株式会社 | Radio frequency switching circuit and semiconductor device including the same |
| US20070069798A1 (en) * | 2005-09-28 | 2007-03-29 | Nec Electronics Corporation | Switch circuit for high-frequency-signal switching |
| US20080272824A1 (en) * | 2007-05-03 | 2008-11-06 | Chang-Tsung Fu | CMOS RF switch for high-performance radio systems |
| CN102474251A (en) * | 2009-07-30 | 2012-05-23 | 高通股份有限公司 | Switches with bias resistors for even voltage distribution |
| US20130015717A1 (en) * | 2011-07-13 | 2013-01-17 | Dykstra Jeffrey A | Method and Apparatus for Transistor Switch Isolation |
| CN103812481A (en) * | 2012-11-09 | 2014-05-21 | 台湾积体电路制造股份有限公司 | Switch circuit and method of operating the switch circuit |
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| CN105553455B (en) | 2019-03-19 |
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