CN105552138A - Electrode lead-out method for accurately processing back-contact solar cell to cell chip - Google Patents
Electrode lead-out method for accurately processing back-contact solar cell to cell chip Download PDFInfo
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- CN105552138A CN105552138A CN201610098148.2A CN201610098148A CN105552138A CN 105552138 A CN105552138 A CN 105552138A CN 201610098148 A CN201610098148 A CN 201610098148A CN 105552138 A CN105552138 A CN 105552138A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses an electrode lead-out method for accurately processing a back-contact solar cell to a cell chip, belonging to the technical of a solar cell. The invention aims to provide a fabrication method for leading out an electrode by accurately processing the high-efficiency back-contact cell into various small-sized chips, and short circuit caused by dislocation between adjacent gate lines is prevented. The main technical feature lies that on a backlight surface of the back-contact cell, gate line collection conductive layers of insulation layers and current collection layers cover different-polarity gates lines of a positive electrode lead-out end and a negative electrode lead-out end of each chip which is cut, and the back contact solar cell is fabricated by a mask silk-screen printing process. With the implementation of the electrode lead-out method, the qualified rate of high-voltage output chips reaches over 99%, the short circuit between adjacent gate lines caused by a position error of an electrode gate line collection sleeve is eliminated, and the production cost is remarkably reduced.
Description
Technical field
The invention discloses the electrode lead-out method that a kind of high-effect back contact solar battery is processed into various high-effect miniaturized battery chip, belong to technical field of solar batteries.
Background technology
At present, back contact solar battery is widely used because generating efficiency is high, and researcher constantly researchs and develops the different back contact solar battery of many structures (hereinafter referred to as back contact battery or battery).Back-contact battery refers to that the electrode of emitter region n+ and the electrode of base p+ are all positioned at a kind of silicon chip solar cell in silicon solar cell back face, back contact battery eliminates the shading loss of battery front side gate line electrode, effectively improves battery utilance and transformation efficiency; Easy assembling, all overleaf, the coplanar connection of component package, cell piece interval reduces both positive and negative polarity, and packaging density is improved, and difficulty reduces.The front of battery does not have Tu tin band, and sensitive surface is homogeneous, attractive in appearance.The patented technology US7339110B1 of u s company SUNPOWER gives a kind of typical back-contact battery, and the both positive and negative polarity of battery is all positioned at the back side of battery, and both positive and negative polarity grid line is interlaced arrangement, and both positive and negative polarity is distributed in distance.The photovoltaic module for large-scale power station is not only by back-contact battery, and back-contact battery is cut into the battery chip (hereinafter referred to as chip) of the less back-contact of size simultaneously, is widely used in consumer electronics product and small-sized electronic product.Prior art, chip is made with back-contact battery, adopt the electrode of high-accuracy PCB contraposition to draw technique, as Chinese Patent Application No. be 201410283104.8 and application number be 201380017058.1, be substrate by high accuracy PCB version, complete the cutting of back-contact battery and gate electrode line is connected in series with the circuit of pcb board and draws, this material cost and plant equipment with high costs.
Summary of the invention
The present invention is directed to above-mentioned prior art existing problems, particularly back-contact battery is become various sizes chip by retrofit, its electrode lead-out method, has become the key technology that those skilled in the art are urgently to be resolved hurrily.
Given this, primary and foremost purpose of the present invention reduces chip manufacture cost, avoids electrode in back contact battery secondary operations cutting process to draw grid line deviation.
Another object of the present invention is the electrode leads to client method problem that back contact battery is processed to chip.
Technical solution of the present invention is: a kind of back contact solar battery Precision Machining becomes the electrode lead-out method of battery chip, comprise be positioned at the former substrate of silicon shady face on the positive and negative electrode in n+ district and p+ district, and spaced phase heteropole grid, its technical characteristic is the back electrode face in back contact battery, adopt grid line insulating coating half tone, adopt mask silk-screen printing technique, the relevant position of insulating barrier slurry silk-screen to substrate, form the insulating barrier of the positive and negative electrode exit dissimilar polarities grid line intending each battery chip cut out;
Preferably, adopt grid line to conflux conductive layer half tone, adopt mask silk-screen printing technique, the insulating barrier of conductive layer slurry silk-screen to insulating layer region, back electrode face, the conductive layer that the positive and negative electrode exit grid line forming each battery chip that plan cuts out confluxes.
Preferably, intend the insulating barrier of each battery chip cut out, the insulating barrier slurry used is UV ultraviolet-setting or thermosetting epoxy resin dielectric ink.
Adopt grid line insulating coating half tone, adopt mask silk-screen printing technique, the relevant position of insulating barrier slurry silk-screen to substrate, form the insulating barrier of the positive and negative electrode exit dissimilar polarities grid line intending each battery chip cut out;
Adopt grid line to conflux conductive layer half tone, use mask silk-screen printing technique, the insulating barrier of conductive layer slurry silk-screen to insulating layer region, back electrode face, the conductive layer that the positive and negative electrode exit grid line forming each battery chip that plan cuts out confluxes.
Preferably, the insulating barrier of dissimilar polarities grid line covers respectively conductive layer be cover do not cover insulating barrier dissimilar polarities grid line on realize collecting current lead-through.
Preferably, the conductive layer of the positive and negative electrode exit of described chip covers dissimilar polarities grid line to conflux on the dielectric film of layer, comprise a kind of can the conductive layer of welding electrode lead-out wire, or adopt conductive profile comprise the copper strips of band conductive adhesive layer, aluminium strip, tin-coated copper strip conducting metal band form conductive layer.
Comprise the substrate preparing insulating barrier, on the back electrode face of back contact battery, adopt grid line insulating coating half tone, mask silk-screen printing technique, insulating barrier slurry is comprised UV ultraviolet-setting or the thermosetting epoxy resin dielectric ink silk-screen relevant position to substrate, forms the insulating barrier of the positive and negative electrode exit dissimilar polarities grid line intending each chip cut out; The photocuring temperature of UV ultraviolet-setting is set to 45 ~ 80 ° of C, and use thermosetting epoxy resin dielectric ink, curing temperature is set to 100 ~ 160 ° of C.
On the substrate preparing insulating barrier, grid line is adopted to conflux conductive layer half tone, adopt mask silk-screen printing technique, conductive layer with comprise copper slurry, silver slurry, tin cream slurry optional wherein a kind of electrocondution slurry silk-screen to the relevant position of insulating layer region, back electrode face, the positive and negative electrode forming each battery chip that plan cuts out confluxes conductive layer; Or adopt conductive profile to comprise the conducting metal band of the band copper strips of conductive adhesive layer, aluminium strip, tin-coated copper strip, optional wherein a kind of conductive profile confluxes and forms the conductive layer of extraction electrode, then adopt hot pressing or static pressure equipment, electric conducting material is fitted to the positive and negative electrode lead-out area relevant position of the substrate preparing insulating barrier being intended each battery chip cut out, conflux and extraction electrode end with the positive and negative electrode forming each battery chip.As used copper to starch as conductive layer slurry, adopt the expanded metal lath silk-screen that 0.06 ~ 0.15mm is thick, curing temperature is set to 130 ~ 170 ° of C; As used silver slurry as conductive layer slurry, adopt the expanded metal lath silk-screen that 0.06 ~ 0.15mm is thick, curing temperature is set to 120 ~ 150 ° of C; As used low temperature tin cream as conductive layer slurry, adopt the expanded metal lath silk-screen that 0.1 ~ 0.2mm is thick, with reflow ovens solidification, curing temperature is set to 130 ~ 170 ° of C, and line speed is set to 0.6 ~ 1.2m/min.
Said electrode converging conductive layer is not weldable material, then need on its surface by the positive and negative extraction electrode position of each battery chip and pad size demand, again silk-screen can welding electrode layer (as can bit copper slurry, silver slurry, tin cream etc.), to make the welding electrode of electrode outlet line.Can starch as pad slurry by bit copper as used, adopt the expanded metal lath silk-screen that 0.04 ~ 0.08mm is thick, curing temperature is set to 130 ~ 170 ° of C; Can weld silver slurry as used as pad slurry, adopt the expanded metal lath silk-screen that 0.04 ~ 0.08mm is thick, curing temperature is set to 120 ~ 150 ° of C; As used low temperature tin cream as pad slurry, adopt the expanded metal lath silk-screen that 0.1 ~ 0.2mm is thick, adopt reflow ovens solidification, center curing temperature is set to 130 ~ 170 ° of C.
Adopt high-precision laser silicon chip cutter or emery wheel silicon chip cutter, intend the cutting position design drawing of each baby battery chip cut out by back electrode silicon solar cell chip, back electrode silicon solar cell chip cutting is become the baby battery chip of the independent both positive and negative polarity output electrode of band.
The good effect that the present invention produces:
Back electrode silicon solar cell can be cut into the baby battery chip of appointing geomery by power demand, form the miniaturization of solar module and the chip of high voltage output.
Chip yield reaches more than 99%, by chip mask silk printing screen domain shape and the particular design of overlapping bit flag, and the high accuracy of manufacturing process controls, the short circuit problem between the adjoining both positive and negative polarity grid line caused because of cover position error when the gate electrode line eliminating battery chip confluxes.
Without the need to pre-determined bit, compared with existing SMT technology machining back electrode silicon solar cell chip technology after baby battery chip cutting, being concatenated into assembly by welding method, without the need to doing accurate pre-determined bit to realize the serial connection of assembly to each baby battery, greatly improving production efficiency.
Save processing cost, adopt this chip serial connection technology, material only needs plain conductor or general painting tin band, just can complete assembly serial connection, save the processing cost of solar module with common flatiron.Existing SMT machining back electrode silicon solar cell chip technology, employing high-accuracy PCB is substrate, with SMT machine and reflow machine complete solar module serial connection, material cost and plant equipment cost very high.
The particularly making of insulating barrier making, has made good place mat for making the conductive layer that confluxes, positive and negative gate-shaped electrode short circuit when effectively preventing cell backside from confluxing conductive layer for making.Do not exist because offseting the short circuit caused after insulation paste solidification.
Accompanying drawing explanation
Fig. 1. be the cross-sectional view of the back contact battery of US Patent No. 7339110B1, in figure, positive pole grid line 50 and the negative pole grid line 52 of back contact battery 10 are spaced.
Fig. 2. be the shady face structural representation of the back contact battery of US Patent No. 7339110B1.
Fig. 3. be the shady face electrode lead-out structure schematic diagram of the battery chip after back contact battery 10 of the present invention cutting, insulating barrier 1 in figure covers positive pole grid line 50 and negative pole grid line 52 respectively at two ends, insulating barrier 1 covers conductive layer 2, and the negative pole grid line 52 and positive pole grid line 50 that do not cover insulating barrier 1 conflux at two ends conducting by conductive layer 2 respectively.
Fig. 4. be A-A cross-sectional view in Fig. 3, insulating barrier 1 covers negative pole grid line 52, and positive pole grid line 50 confluxes conducting by conductive layer 2.
Fig. 5. be B-B cross-sectional view in Fig. 3, insulating barrier 1 covers positive pole grid line 50, and negative pole grid line 52 confluxes conducting by conductive layer 2.
Fig. 6. be the embodiment of the present invention 1 back contact battery cutting before shady face electrode lead-out structure schematic diagram, back contact battery 10 shady face cutting before corresponding battery chip position on silk-screen insulating barrier 1 and conductive layer 2.
Fig. 7. be the electrode lead-out structure schematic diagram that back contact battery 10 in Fig. 6 cuts the battery chip of rear upper position, positive pole exit is the positive terminal 5 of back contact battery 10 itself, negative pole exit is first covered with insulating barrier 1 by the positive pole grid line 50 of back contact battery 10, then to be confluxed by negative pole grid line 52 conducting with conductive layer 2.
Fig. 8. be the electrode lead-out structure schematic diagram that back contact battery 10 in Fig. 6 cuts the battery chip in rear centre position, positive pole exit is first covered with insulating barrier 1 by the negative pole grid line 52 of back contact battery 10, positive pole grid line 50 to be confluxed conducting with conductive layer 2 again, negative pole exit is first covered with insulating barrier 1 by the positive pole grid line 50 of back contact battery 10, then to be confluxed by negative pole grid line 52 conducting with conductive layer 2.
Fig. 9. be the electrode lead-out structure schematic diagram that back contact battery 10 in Fig. 6 cuts the battery chip of rear lower position, positive pole exit is first covered with insulating barrier 1 by the negative pole grid line 52 of back contact battery 10, to be confluxed by positive pole grid line 50 conducting with conductive layer 2, negative pole exit is the negative pole end 6 of of back contact battery 10 itself again.
Figure 10. be the Facad structure schematic diagram of the embodiment of the present invention 2, when conductive layer 2 be not weldable material time, on conductive layer 2, silk-screen can layer 3.
Figure 11. be the C-C cross-sectional view in Figure 10.
Figure 12. be the cross-sectional view of the embodiment of the present invention 3, conductive layer 2 adopts the copper strips 8 of band conductive adhesive layer 7, conductive adhesive layer 7 be bonded in negative pole grid line 52(or positive pole grid line 50) and insulating barrier 1 on.
Figure 13. be the copper strips 8 of the band conductive adhesive layer 7 in Figure 12, below copper strips 8, have one deck conductive adhesive layer 7.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.
Embodiment 1
As shown in Figure 6, the back contact solar cell 10 of this enforcement is the specification of the 125X125mm that SUNPOWER company of the U.S. produces, the position as shown in line of cut 4 is needed to cut out the battery chip that 18 block specifications are 32.4X20.9mm, left and right arrangement is laterally 3 pieces, longitudinal 6 pieces up and down, left and right edges reserves silicon chip and can be used in other size and use, on top the positive pole of 3 pieces of edge is drawn, the positive pole exit 5 of back contact battery 10 itself can be utilized as shown in Figure 7, negative pole exit is after being covered by insulating barrier 1 by positive pole grid line 50, the negative pole grid line 52 do not covered by insulating barrier 1 to be confluxed conducting by conductive layer 2 by insulating barrier 1, draw at the negative poles of following 3 pieces, the negative pole exit 6 of back contact battery 10 itself can be utilized as shown in Figure 9, after positive electrode exit is covered with insulating barrier 1 by negative pole grid line 52, on insulating barrier 1, with conductive layer 2, the positive pole grid line 50 do not covered by insulating barrier 1 is collected conducting again, at 12 pieces of battery chips in centre position, top is positive pole exit as shown in Figure 8, be negative pole exit below, negative pole grid line 52 insulating barrier 1 first covers by positive pole exit on top, conductive layer 2 is covered again on insulating barrier 1, the positive pole grid line 50 do not covered by insulating barrier 1 is collected current lead-through by conductive layer 2, form positive pole exit, first positive pole grid line 50 is covered by insulating barrier 1 at following negative pole exit, conductive layer 2 is covered again on insulating barrier 1, the negative pole grid line 52 do not covered by insulating barrier 1 confluxes conducting by conductive layer 2, form negative pole exit.
Manufacturing process is as follows:
First the shady face of back contact battery 10 is placed on silk-screen platform upward, the loci of grid line insulating coating half tone and back contact battery 10 is accurately overlapped position, then mask silk-screen printing technique is adopted, the relevant position of insulating barrier 1 ink slurry silk-screen to the shady face of back contact battery 10, form the insulating barrier 1 of the positive and negative electrode exit dissimilar polarities grid line intending each battery chip cut out, namely at the positive pole exit of battery chip, negative pole grid line 52 is covered insulating barrier 1, at negative pole exit, positive pole grid line 50 is covered insulating barrier 1.Insulating barrier 1 slurry used can be UV ultraviolet-setting or thermosetting epoxy resin dielectric ink, adopts the expanded metal lath silk-screen that 0.06mm is thick; As used UV ultraviolet-setting dielectric ink, UV UV-curing machine solidifies, and curing temperature is set to 65 ° of C; As used thermosetting epoxy resin dielectric ink, adopt Electric heat oven solidification, curing temperature is set to 120 ° of C.
On the shady face of back contact battery 10 preparing insulating barrier 1, grid line is adopted to conflux conductive layer 2 half tone, adopt mask silk-screen printing technique, the electrocondution slurry of conductive layer 2 (as copper slurry, silver slurry, tin cream etc.) silk-screen to relevant position, form the positive and negative electrode of each battery chip intending cutting out to conflux conductive layer 2, namely the positive pole grid line 50 do not covered by insulating barrier 1 to be confluxed conducting at positive pole exit conductive layer 2, the negative pole grid line 52 do not covered by insulating barrier 1 to be confluxed conducting at negative pole exit conductive layer 2.As starched as conductive layer slurry with copper, adopt the expanded metal lath silk-screen that 0.15mm is thick, curing temperature is set to 150 ° of C; As starched as conductive layer slurry with silver, adopt the expanded metal lath silk-screen that 0.15mm is thick, curing temperature is set to 130 ° of C; As used low temperature tin cream as conductive layer slurry, adopt the expanded metal lath silk-screen that 0.2mm is thick, adopt reflow ovens solidification, center curing temperature is set to 160 ° of C.
By size line of cut 4, back contact battery 10 is cut into battery chip, first left and right edges part is cut, and then other is cut, can use after cutting.
Embodiment 2
In embodiment 1, if conductive layer 2 is not weldable material, then can as shown in Figure 10 and Figure 11, the pad silk-screened conductive on conductive layer 2 can layer 3, can welding electrode lead-out wire on layer 3.As use can bit copper slurry as can layer 3 pad slurry, adopt the expanded metal lath silk-screen that 0.06mm is thick, curing temperature is set to 140 ° of C; Can weld silver slurry as used as can layer 3 pad slurry, adopt the expanded metal lath silk-screen that 0.06mm is thick, curing temperature is set to 120 ° of C; As used low temperature tin cream as can layer pad slurry, adopt the expanded metal lath silk-screen that 0.1mm is thick, adopt reflow ovens solidification, center curing temperature is set to 160 ° of C.
Embodiment 3
As shown in Figure 12 and Figure 13, the conductive profile of the copper strips 8 of the wide band conductive adhesive layer 7 of 2mm is adopted to replace conductive layer 2 in embodiment 1, adopt heat pressing process, the copper strips 8 of band conductive adhesive layer 7 is fitted to the positive and negative electrode lead-out area relevant position of the back contact battery 10 preparing insulating barrier 1 being intended each battery chip cut out, conflux and extraction electrode end with the positive and negative electrode forming each battery chip.
Manufacturing process is as follows:
First the shady face of back contact battery 10 is placed on silk-screen platform upward, the loci of grid line insulating coating half tone and back contact battery 10 is accurately overlapped position, then mask silk-screen printing technique is adopted, the relevant position of insulating barrier 1 ink slurry silk-screen to the shady face of back contact battery 10, form the insulating barrier 1 of the positive and negative electrode exit dissimilar polarities grid line intending each battery chip cut out, namely at the positive pole exit of battery chip, negative pole grid line 52 is covered insulating barrier 1, at negative pole exit, positive pole grid line 50 is covered insulating barrier 1.
To prepare on the shady face of back contact battery 10 of insulating barrier 1, be placed on hot press work top by hot press positioner, start hot press switch, hot press the copper strips 8 of the band conductive adhesive layer 7 cut by design size requirement is fitted to prepare insulating barrier 1 back contact battery 10 on intend the positive and negative electrode lead-out area relevant position of each battery chip cut out, the positive and negative electrode forming each battery chip confluxes and extraction electrode end.
By line of cut 4, back contact battery 10 is cut into battery chip, can use.
Claims (12)
1. a back contact solar battery Precision Machining becomes the electrode lead-out method of battery chip, comprise be positioned at the former substrate of silicon shady face on the positive and negative electrode in n+ district and p+ district, and spaced phase heteropole grid, its technical characteristic is the back electrode face in back contact battery, adopt grid line insulating coating half tone, adopt mask silk-screen printing technique, the relevant position of insulating barrier slurry silk-screen to substrate, form the insulating barrier of the positive and negative electrode exit dissimilar polarities grid line intending each battery chip cut out;
Adopt grid line to conflux conductive layer half tone, adopt mask silk-screen printing technique, the insulating barrier of conductive layer slurry silk-screen to insulating layer region, back electrode face, the conductive layer that the positive and negative electrode exit grid line forming each battery chip that plan cuts out confluxes.
2. a kind of back contact solar battery Precision Machining according to claim 1 becomes the electrode lead-out method of battery chip, its technical characteristic is the insulating barrier of each battery chip cut out in above said plan, and the insulating barrier slurry used is UV ultraviolet-setting or thermosetting epoxy resin dielectric ink.
3. a kind of back contact solar battery Precision Machining according to claim 1 becomes the electrode lead-out method of battery chip, its technical characteristic is it is the expanded metal lath silk-screen UV ultraviolet-setting dielectric ink of employing 0.04 ~ 0.10mm thickness at above said insulating barrier, and curing temperature is set to 45 ~ 80 ° of C.
4. a kind of back contact solar battery Precision Machining according to claim 1 becomes the electrode lead-out method of battery chip, its technical characteristic is the insulating barrier of each battery chip cut out in above said plan, with the exhausted silk-screen of expanded metal lath silk-screen thermosetting epoxy resin of 0.04 ~ 0.10mm thickness, curing temperature is set to 100 ~ 160 ° of C.
5. a kind of back contact solar battery Precision Machining according to claim 1 becomes the electrode lead-out method of battery chip, its technical characteristic is that the grid line of the positive and negative electrode exit of each battery chip that said plan cuts out confluxes conductive layer, also comprise employing electrocondution slurry, wherein copper slurry is as conductive layer, adopt the expanded metal lath silk-screen that 0.06 ~ 0.15mm is thick, curing temperature is set to 130 ~ 170 ° of C.
6. a kind of back contact solar battery Precision Machining according to claim 5 becomes the electrode lead-out method of battery chip, its technical characteristic is said conductive layer, also comprise with silver slurry as conductive layer, adopt the expanded metal lath silk-screen that 0.06 ~ 0.15mm is thick, curing temperature is set to 120 ~ 150 ° of C.
7. a kind of back contact solar battery Precision Machining according to claim 5 becomes the electrode lead-out method of battery chip, its technical characteristic is said conductive layer, also comprise with low temperature tin cream as conductive layer slurry, adopt the expanded metal lath silk-screen that 0.1 ~ 0.2mm is thick, with reflow ovens solidification, center curing temperature is set to 130 ~ 170 ° of C.
8. a kind of back contact solar battery Precision Machining according to claim 1 becomes the electrode lead-out method of battery chip, its technical characteristic is said conductive layer, comprise the conducting metal conductive profile of the copper strips of band conductive adhesive layer, aluminium strip, tin-coated copper strip, then adopt hot pressing or static pressure equipment, electric conducting material is fitted to and prepares on the substrate of insulating barrier.
9. a kind of back contact solar battery Precision Machining according to claim 1 becomes the electrode lead-out method of battery chip, its technical characteristic is that said conductive layer is for exempting from welding material, on its surface by the positive and negative extraction electrode position of each battery chip and pad size demand, silk-screen can welding electrode layer again, comprise can bit copper slurry, silver slurry, tin cream, make the welding electrode of electrode outlet line.
10. a kind of back contact solar battery Precision Machining according to claim 1 becomes the electrode lead-out method of battery chip, its technical characteristic is each battery chip that said plan cuts out, and adopts high-precision laser silicon chip cutter or emery wheel silicon chip cutter.
11. a kind of back contact solar battery Precision Machining according to claim 10 become the electrode lead-out method of battery chip, its technical characteristic is each battery chip that said plan cuts out, and back electrode silion cell is cut into the little chip being with independent both positive and negative polarity output electrode.
12. a kind of back contact solar battery Precision Machining according to claim 1 become the electrode lead-out method of battery chip, and its technical characteristic is that the said each chip cut out is connected into battery chip assembly or connection in series-parallel assembly at its electrode leads to client electric iron sealing wire.
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| US7339110B1 (en) * | 2003-04-10 | 2008-03-04 | Sunpower Corporation | Solar cell and method of manufacture |
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