CN105551941B - A method of improving metal germanide thermal stability - Google Patents
A method of improving metal germanide thermal stability Download PDFInfo
- Publication number
- CN105551941B CN105551941B CN201610017832.3A CN201610017832A CN105551941B CN 105551941 B CN105551941 B CN 105551941B CN 201610017832 A CN201610017832 A CN 201610017832A CN 105551941 B CN105551941 B CN 105551941B
- Authority
- CN
- China
- Prior art keywords
- germanium
- metal germanide
- metal
- base substrate
- nitrogen plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a kind of methods for improving metal germanide thermal stability, belong to field of microelectronic devices.Before this method is by preparing metal germanide film on germanium base substrate, surface is handled using nitrogen plasma, the thermal stability of metal germanide film on germanium base substrate can be improved, improve its surface topography, and compatible with prior art, the technique for being conducive to germanium base MOS device is integrated.
Description
Technical field
The present invention relates to a kind of methods for improving metal germanide thermal stability, belong to field of semiconductor fabrication processes.
Background technique
With the development of integrated circuit, the characteristic size of semiconductor devices constantly reduces, mobil-ity degradation in silicon-based devices
The problems such as seriously affected the promotion of device performance.Further increasing for MOS device performance needs to propose new device architecture, work
Skill and material.Germanium material is due to having higher than silicon materials and symmetrical carrier mobility, excellent with traditional silicon process compatible etc.
Point becomes the very promising candidate material of high-performance MOS devices.As device size enters nanoscale, source-drain series resistance
Influence to device performance is more and more significant, it is therefore desirable to reduce source-drain series resistance using source and drain metal germanide.
But the thermal stability of metal germanide film is poor, agglomeration effect can occur for metal germanide film, be formed empty
Hole, film quality are deteriorated.With device dimensions shrink, metal germanide film thickness constantly reduces, and thermal stability problems are more aobvious
It writes.
Summary of the invention
In order to solve problem above, the invention proposes a kind of method for improving metal germanide thermal stability, this method
Before preparing metal germanide film on germanium base substrate, surface is handled using nitrogen plasma, germanium can be improved
The thermal stability of metal germanide film on base substrate improves its surface topography, and compatible with prior art, is conducive to germanium base
The technique of MOS device is integrated.
The specific technical solution of the present invention is as follows:
A method of metal germanide thermal stability being improved, specific steps include:
1) pickup and natural oxidizing layer of germanium base substrate surface are removed；
2) surface is handled using nitrogen plasma, the nitrogen plasma treatment time is 5s~10min；
3) metal is deposited, annealing forms metal germanide film, then removes unreacted metal.
Germanium base substrate includes that germanium substrate, silicon substrate extension germanium substrate or germanium cover insulating substrate etc. in the step 1), but not office
It is limited to above-mentioned substrate material, is also possible to the substrate that epitaxial germanium layer is contained on any surface.
The method of removal surface pickup and natural oxidizing layer can be organic washing, hydrochloric acid cleaning, hydrogen in the step 1)
Hydrofluoric acid cleaning etc., but it is not limited to the above method.
The gas that nitrogen plasma is generated in the step 2) can be N2、NH3One of equal nitrogenous gas are a variety of,
But it is not limited to above-mentioned gas.
The equipment that nitrogen plasma is generated in the step 2) can be atomic layer deposition (ALD) equipment, be also possible to it
His any equipment that can produce nitrogen plasma.
Metal can be nickel, platinum or cobalt etc. in the step 3).Annealing temperature and annealing time should be according to required germanium metals
Compound film thickness determines.
Advantage of the present invention is as follows:
Before the present invention is by preparing metal germanide film on germanium base substrate, using nitrogen plasma to germanium base substrate table
Face is pre-processed, and metal germanide film heat stability can be improved, and improves its surface topography, is conducive to extend germanium base MOS
The technological temperature window that device source and drain metal germanide is formed.This method is compatible with prior art, is conducive to germanium base MOS device
Technique is integrated.Fig. 1 (a) and Fig. 1 (b) is set forth not using nitrogen plasma treatment and is formed using nitrogen plasma treatment
Nickel germanium film SEM figure, growth temperature is 450 DEG C.It can be seen that the nickel germanium film formed using nitrogen plasma treatment
Surface more smooth can effectively improve nickel germanium film thermal stability without apparent block-shaped protrusion and hole, improve its surface shape
Looks.
Detailed description of the invention
Fig. 1 (a) is the SEM figure for the nickel germanium film not formed using nitrogen plasma treatment；Fig. 1 (b) be using nitrogen etc. from
The SEM figure for the nickel germanium film that daughter processing is formed.
Fig. 2 (a)~(c) is the flow chart using nitrogen plasma treatment method specific embodiment proposed by the present invention.
In Fig. 2: 1- germanium substrate；2- metal germanide.
Specific embodiment
Before this method is by preparing metal germanide film on germanium base substrate, using nitrogen plasma to germanium base substrate table
Face is pre-processed.The thermal stability of metal germanide film can be improved in the present invention, improves its surface topography, and with it is existing
Process compatible.
By taking germanium substrate as an example, the method proposed by the present invention for improving metal germanide thermal stability is as follows:
Step 1. provides germanium substrate, as shown in Fig. 2 (a).
Step 2. cleans germanium substrate surface, removes germanium base substrate surface pickup and natural oxidizing layer.
Germanium substrate is placed in atomic layer deposition (ALD) equipment cavity by step 3., is carried out at nitrogen plasma to germanium substrate
Reason, as shown in Fig. 2 (b).The nitrogen plasma treatment time is 120s.
Step 4. deposits one layer of metallic film, film thickness 10nm in germanium substrate.To the germanium substrate for being deposited with metal
Rapid thermal annealing is carried out, reacts metal with germanium substrate, forms metal germanide.Annealing temperature is 400 DEG C, and annealing time is
120s.Then, unreacted metal is removed, as shown in Fig. 2 (c).
The present invention is described in detail above by specific embodiment.Anyone skilled in the art is not departing from
Under technical solution of the present invention ambit, all technical solution of the present invention is made using the methods and technical content of the disclosure above
Many possible changes and modifications or equivalent example modified to equivalent change.Therefore, all without departing from the technology of the present invention side
The content of case, according to the technical essence of the invention any equivalent variations made to the above embodiment or modification still fall within this
The covering scope of inventive technique scheme.
Claims (5)
1. a kind of metal germanide method for manufacturing thin film is used to improve the application of the thermal stability of metal germanide on germanium base substrate,
The metal germanide prepare the step of include:
1) pickup and natural oxidizing layer of germanium base substrate surface are removed；
2) germanium base substrate surface is handled using nitrogen plasma, the nitrogen plasma treatment time is 5s~10min；
3) metal is deposited, metal is nickel, platinum or cobalt, and annealing forms metal germanide film, then removes unreacted metal.
2. application as described in claim 1, which is characterized in that germanium base substrate includes germanium substrate, outside silicon substrate in the step 1)
Prolong germanium substrate or germanium covers insulating substrate.
3. application as described in claim 1, which is characterized in that removal germanium base substrate surface pickup and nature in the step 1)
The method of oxide layer is organic washing, hydrochloric acid cleaning or hydrofluoric acid clean.
4. application as described in claim 1, which is characterized in that the equipment for generating nitrogen plasma in the step 2) is atom
Layer deposit ALD equipment.
5. application as described in claim 1, which is characterized in that the gas for generating nitrogen plasma in the step 2) is N2Or
NH3One of or it is a variety of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610017832.3A CN105551941B (en) | 2016-01-12 | 2016-01-12 | A method of improving metal germanide thermal stability |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610017832.3A CN105551941B (en) | 2016-01-12 | 2016-01-12 | A method of improving metal germanide thermal stability |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105551941A CN105551941A (en) | 2016-05-04 |
| CN105551941B true CN105551941B (en) | 2019-01-15 |
Family
ID=55831056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610017832.3A Active CN105551941B (en) | 2016-01-12 | 2016-01-12 | A method of improving metal germanide thermal stability |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105551941B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101635262A (en) * | 2009-08-07 | 2010-01-27 | 北京大学 | Preparation method of germanium-base schottky transistor |
| US20100065886A1 (en) * | 2008-09-12 | 2010-03-18 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing method thereof |
| CN102339736A (en) * | 2010-07-16 | 2012-02-01 | 中国科学院微电子研究所 | Interface optimized germanium-based semiconductor device and manufacturing method thereof |
| US20120282769A1 (en) * | 2008-08-07 | 2012-11-08 | Samsung Electronics Co., Ltd. | Methods of forming integrated circuit devices having electrically conductive layers therein with partially nitridated sidewalls |
| CN102881562A (en) * | 2012-10-11 | 2013-01-16 | 北京大学 | Surface passivation method of germanium-based substrate |
-
2016
- 2016-01-12 CN CN201610017832.3A patent/CN105551941B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120282769A1 (en) * | 2008-08-07 | 2012-11-08 | Samsung Electronics Co., Ltd. | Methods of forming integrated circuit devices having electrically conductive layers therein with partially nitridated sidewalls |
| US20100065886A1 (en) * | 2008-09-12 | 2010-03-18 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing method thereof |
| CN101635262A (en) * | 2009-08-07 | 2010-01-27 | 北京大学 | Preparation method of germanium-base schottky transistor |
| CN102339736A (en) * | 2010-07-16 | 2012-02-01 | 中国科学院微电子研究所 | Interface optimized germanium-based semiconductor device and manufacturing method thereof |
| CN102881562A (en) * | 2012-10-11 | 2013-01-16 | 北京大学 | Surface passivation method of germanium-based substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105551941A (en) | 2016-05-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6811448B1 (en) | Pre-cleaning for silicidation in an SMOS process | |
| CN103459137B (en) | For the nitride grid dielectric of graphene MOS FET | |
| CN101819928B (en) | Method for manufacturing replacement metal gate transistors with reduced gate oxide leakage | |
| US6448127B1 (en) | Process for formation of ultra-thin base oxide in high k/oxide stack gate dielectrics of mosfets | |
| CN108573866A (en) | Oxidation film minimizing technology and device and contact site forming method and system | |
| CN103681269A (en) | Method for selectively forming high-K dielectric layer | |
| US20210272814A1 (en) | Selectively etching for nanowires | |
| CN103943512A (en) | Method for reducing graphene and electrode contact resistance | |
| TW200618298A (en) | Fabrication method of thin film transistor | |
| US8785303B2 (en) | Methods for depositing amorphous silicon | |
| CN101800178B (en) | Preparation method of hafnium silicon aluminum oxygen nitrogen high dielectric constant gate dielectric | |
| CN105551941B (en) | A method of improving metal germanide thermal stability | |
| CN109686667A (en) | A kind of SiC base MOS device and its preparation method and application | |
| TWI748423B (en) | Treatments to enhance material structures | |
| CN102381718B (en) | Passivant and method for adopting passivant to realize surface pretreatment for germanium-base devices | |
| CN109494150B (en) | Manufacturing method of silicon carbide high-temperature annealing surface protection and silicon carbide power device | |
| CN104716191B (en) | Bipolar graphene field effect transistor of double grid and preparation method thereof | |
| CN113725076B (en) | Preparation method of hydrogen terminal diamond tunneling ohmic contact resistor | |
| CN105244267B (en) | A kind of Ohmic contact method of silicon carbide PiN device | |
| CN102492932B (en) | In-situ surface passivation method in ALD (atomic layer deposition) production of GaAs-based MOS (Metal Oxide Semiconductor) devices | |
| CN205177850U (en) | Germanium base MOS device | |
| CN109166797A (en) | TiAlN thin film lithographic method | |
| CN103556127A (en) | Cleaning method of vapor deposition film-forming equipment | |
| CN105374689A (en) | A surface passivation method for a germanium-base MOS device and an obtained germanium-base MOS device | |
| CN110379709A (en) | The manufacturing method of hafnia film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |