CN105551938B - A method of making NiGeSn material - Google Patents
A method of making NiGeSn material Download PDFInfo
- Publication number
- CN105551938B CN105551938B CN201510977256.2A CN201510977256A CN105551938B CN 105551938 B CN105551938 B CN 105551938B CN 201510977256 A CN201510977256 A CN 201510977256A CN 105551938 B CN105551938 B CN 105551938B
- Authority
- CN
- China
- Prior art keywords
- layer
- metal
- nigesn
- layer surface
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title description 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 35
- 238000000137 annealing Methods 0.000 claims abstract description 12
- 238000012545 processing Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 238000010792 warming Methods 0.000 claims abstract description 5
- 238000004321 preservation Methods 0.000 claims abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims description 3
- 230000037431 insertion Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract description 2
- 230000007797 corrosion Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 44
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- 229910005898 GeSn Inorganic materials 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910001128 Sn alloy Inorganic materials 0.000 description 3
- JBTQADVJTXNKDU-UHFFFAOYSA-N [Ge].[Ni].[Sn] Chemical compound [Ge].[Ni].[Sn] JBTQADVJTXNKDU-UHFFFAOYSA-N 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- IWTIUUVUEKAHRM-UHFFFAOYSA-N germanium tin Chemical compound [Ge].[Sn] IWTIUUVUEKAHRM-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910001868 water Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000958 atom scattering Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02535—Group 14 semiconducting materials including tin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a kind of method for making NiGeSn material, the method is offer Ge first1‑xSnxLayer material is as initial substrate, then in Ge1‑xSnxLayer surface grows metal inserting layer, then grows Ni metal layer on metal inserting layer surface；Then short annealing processing is carried out：It after being warming up to 300~600 DEG C, heat preservation 20~120 seconds with 25~75 DEG C/sec of heating rate, was cooled to room temperature within 100~200 second time, metal inserting layer and unreacted W metal is finally removed using chemical corrosion method to get NiGeSn material is arrived.The method of the present invention has many advantages, such as simple process, is easy to industrializing implementation；NiGeSn material generated is continuous, uniform, smooth, can meet the application requirement as transistor device contact material, and is conducive to improve the electrical property of transistor device.
Description
Technical field
The present invention is to be related to a kind of method for making NiGeSn material, belongs to technical field of material.
Background technique
In recent years, and traditional silicon materials belong to the germanium tin alloy (GeSn) of column IV element, because of its unique attribute, by
Researcher greatly pays close attention to.In transistor channel region, GeSn becomes high migration because it is with high carrier mobility
The hot spot of rate MOSFET element research, such as：Hole mobility, germanium tin are improved by introducing large compressive strain in GeSn channel
Quantum well devices present excellent electric property；In addition, GeSn is greater than germanium because of its lattice constant in source transistor drain region
(Ge), pressure source of the GeSn as Ge channel transistor uniaxial compressive can be introduced, further to promote Ge channel crystal
The carrier mobility of pipe.
Nickel germanium tin alloy (NiGeSn) is another the novel height developed on the basis of germanium tin alloy (GeSn)
Mobility material is the transistor material of future ideality.Currently, property of the researcher of various countries to nickel germanium tin material, such as：
Ni and Sn atom scattering nature, the electrical properties of NiGeSn etc. in GeSn alloy reaction conduct extensive research.
At present be usually that Ni metal film layer is directly grown on GeSn sample about the preparation of NiGeSn, then into
Row annealing is to be made NiGeSn.But during preparing NiGeSn in this way, reacted in Ni with GeSn
When, since Ni and Ge reaction speed is too fast, and the thermal stability of Sn atom is poor, it is not easy to form continuous NiGeSn film；This
Outside, due to the diffusion of Sn, keep the NiGeSn film quality to be formed bad, largely affect NiGeSn film as source and drain
The application of contact material.
Summary of the invention
In view of the above-mentioned problems existing in the prior art, the object of the present invention is to provide a kind of sides for making NiGeSn material
Method meets it as transistor device contact material to generate continuous, uniform, smooth nickel germanium tin (NiGeSn) material
Application requirement.
To achieve the above object, the present invention adopts the following technical scheme that：
A method of NiGeSn material is made, is offer Ge first1-xSnxLayer material as initial substrate, wherein：
0.01≤x≤0.12；Again in Ge1-xSnxLayer surface grows metal inserting layer；Then Ni metal is grown on metal inserting layer surface
Layer；Then short annealing processing is carried out：300~600 DEG C are warming up to 25~75 DEG C/sec of heating rate, keeps the temperature 20~120 seconds
Afterwards, it was cooled to room temperature within 100~200 second time, Ni metal is made to pass through metal inserting layer and Ge1-xSnxLayer reacts generation
NiGe1-xSnxLayer, wherein：0.01≤x≤0.12；Finally using chemical corrosion method removal metal inserting layer and unreacted metal
Ni to get arrive NiGeSn material.
Preferably, the Ge1-xSnxLayer material is to use molecular beam epitaxy (i.e.：MBE method) preparation Ge lining
The Ge at bottom1-xSnxLayer material.
As further preferred scheme, Ge that molecular beam epitaxy is prepared1-xSnxLayer material passes through surface clean (example
As RCA clean) processing after be used as initial substrate.
Preferably, the metal inserting layer is grown using physical vaporous deposition (PVD).
As further preferred scheme, the metal inserting layer is grown using magnetron sputtering method.
Preferably, the metal inserting layer with a thickness of 1~10nm.
As further preferred scheme, above-mentioned metal inserting layer selects titanium (Ti) or aluminum metal (Al).
Preferably, the Ni metal layer with a thickness of 5~100nm.
As further preferred scheme, the Ni metal layer is using magnetron sputtering technique or electron beam evaporation process in metal
Insertion layer surface is grown.
Preferably, short annealing processing is to carry out in a vacuum or inert atmosphere.
Preferably, the chemical attack uses the hydrochloric acid solution of 5~15wt%.
The present invention passes through in Ge1-xSnxLayer surface grows metal inserting layer, then grows Ni on the surface of metal inserting layer
Metal layer can inhibit Ni and Ge due to the presence of metal inserting layer1-xSnxReaction rate makes Ni and Ge1-xSnxReaction
With the progress of more slow speed, hence for Ge1-xSnxStrain play the role of certain holding, ensure that generated
The flatness and continuity of NiGeSn material.The present invention makes specific temperature ensure that Ni in combination with specific annealing process
With Ge1-xSnxThermal activation energy needed for alloying reaction.
Compared with prior art, the present invention has the advantages that：
1) the method for the present invention simple process is easy to industrializing implementation；
2) NiGeSn material generated is continuous, uniform, smooth, can meet the application as transistor device contact material
It is required that and be conducive to improve transistor device electrical property.
Detailed description of the invention
Fig. 1 is the method for the present invention implementation process diagram；
Fig. 2 is the AFM test chart of NiGeSn material prepared by embodiment；
Fig. 3 is the AFM test chart of NiGeSn material prepared by comparative example.
Specific embodiment
Combined with specific embodiments below and attached drawing, the present invention is further explained.
Embodiment
As shown in Figure 1：The Ge that will be prepared by MBE method1-xSnxLayer material passes through diluted hydrofluoric acid (HF：H2O=1:50, volume
Than) and the surface clean of deionized water after be used as initial substrate, wherein 0.01≤x≤0.12；Again in Ge1-xSnxLayer surface is adopted
With physical vaporous deposition (such as：Magnetron sputtering method) growth thickness be 3nm Al metal inserting layer；Then it is inserted into Al metal
Layer uses magnetron sputtering technique or electron beam evaporation process growth thickness for the Ni metal layer of 10nm；Then it carries out at short annealing
Reason：After being warming up to 500 DEG C, heat preservation 30 seconds with 40 DEG C/sec of heating rate, it was cooled to room temperature within 120 second time, annealing atmosphere
For nitrogen, Ni metal is made to pass through metal inserting layer and Ge1-xSnxLayer, which reacts, generates NiGe1-xSnxLayer, wherein：0.01≤x≤
0.12；Finally using the hydrochloric acid solution removal metal inserting layer of 10wt% and unreacted W metal to get to positioned at Ge1-xSnx
The NiGeSn material of layer surface.
Fig. 2 is the AFM test chart of the NiGeSn material of the present embodiment, as seen from Figure 2：Company is generated using the method for the present invention
Continuous, uniform, smooth NiGeSn material layer, and the roughness (Rq) of gained NiGeSn material only has 2.22nm, this also anticipates simultaneously
Taste the NiGeSn material of the present embodiment thermal stability it is higher.
In addition, when due to using metal Ti as insert layer metal, the surface condition and sheet of obtained NiGeSn material
NiGeSn material proximate obtained by embodiment is just no longer carefully chatted one by one in present specification.
Comparative example
The Ge that will be prepared by MBE method1-xSnxLayer material passes through diluted hydrofluoric acid (HF：H2O=1:50, volume ratio) and go from
Initial substrate is used as after the surface clean of sub- water, wherein：0.01≤x≤0.12；Then directly in Ge1-xSnxLayer surface uses magnetic
Sputtering technology or electron beam evaporation process growth thickness are controlled as the Ni metal layer of 10nm；Then short annealing processing is carried out：With 40
DEG C/sec heating rate be warming up to 400 DEG C, after heat preservation 30 seconds, be cooled to room temperature within 120 second time, annealing atmosphere is nitrogen；
Unreacted W metal is finally removed using the hydrochloric acid solution of 10wt%, obtains NiGeSn material.
Fig. 3 is the AFM test chart of the NiGeSn material of this comparative example, as seen from Figure 3：It is generated using comparative example method
The rough surface of NiGeSn material layer, agglomerates at out-of-flatness, and the roughness (Rq) of resulting materials is up to 17nm, this is simultaneously
Also imply that the thermal stability of the NiGeSn material of this comparative example is lower.
It to sum up tests visible：The present invention passes through in Ge1-xSnxLayer surface first deposited metal insertion before depositing Ni metal layer
Layer, in combination with specific annealing process, improve the flatness of the surface film of NiGeSn material, produce it is continuous, uniform,
Smooth NiGeSn material layer, while improving the temperature that NiGeSn reunites, hence it is evident that the thermal stability for improving material makes
Obtained NiGeSn material can meet the application requirement as transistor device contact material, and be conducive to improve transistors
The electrical property of part has conspicuousness progress and industrial application value.
It is it is necessary to described herein finally, the foregoing is merely the preferable specific embodiment of the present invention, but the present invention
Protection scope be not limited thereto, anyone skilled in the art in the technical scope disclosed by the present invention,
Any changes or substitutions that can be easily thought of, should be covered by the protection scope of the present invention.
Claims (5)
1. a kind of method for making NiGeSn material, it is characterised in that：The method is offer Ge first1-xSnxLayer material as
Initial substrate, wherein：0.01≤x≤0.12；Again in Ge1-xSnxLayer surface growth thickness is the aluminum metal insert layer of 1~10nm；
Then Ni metal layer is grown in aluminum metal insertion layer surface；Then short annealing processing is carried out：With 25~75 DEG C/sec of heating speed
After rate is warming up to 300~600 DEG C, heat preservation 20~120 seconds, it was cooled to room temperature within 100~200 second time, passes through Ni metal
Aluminum metal insert layer and Ge1-xSnxLayer, which reacts, generates NiGe1-xSnxLayer, wherein：0.01≤x≤0.12；Finally using chemistry
Etch removes aluminum metal insert layer and unreacted W metal to get NiGeSn material is arrived.
2. according to the method described in claim 1, it is characterized in that：The metal inserting layer is carried out using physical vaporous deposition
Growth.
3. according to the method described in claim 1, it is characterized in that：The Ni metal layer with a thickness of 5~100nm.
4. method according to claim 1 or 3, it is characterised in that：The Ni metal layer uses magnetron sputtering technique or electricity
Beamlet evaporation technology is grown on metal inserting layer surface.
5. according to the method described in claim 1, it is characterized in that：The short annealing processing is in a vacuum or inert atmosphere
It carries out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510977256.2A CN105551938B (en) | 2015-12-22 | 2015-12-22 | A method of making NiGeSn material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510977256.2A CN105551938B (en) | 2015-12-22 | 2015-12-22 | A method of making NiGeSn material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105551938A CN105551938A (en) | 2016-05-04 |
| CN105551938B true CN105551938B (en) | 2018-11-27 |
Family
ID=55831053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510977256.2A Expired - Fee Related CN105551938B (en) | 2015-12-22 | 2015-12-22 | A method of making NiGeSn material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105551938B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752182A (en) * | 2013-12-30 | 2015-07-01 | 中国科学院上海微系统与信息技术研究所 | Method for manufacturing NiSiGe material through Ti inserting layer |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104409321B (en) * | 2014-10-30 | 2017-05-10 | 上海工程技术大学 | Method utilizing NiTi alloy for epitaxial growth NiSiGe material |
-
2015
- 2015-12-22 CN CN201510977256.2A patent/CN105551938B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752182A (en) * | 2013-12-30 | 2015-07-01 | 中国科学院上海微系统与信息技术研究所 | Method for manufacturing NiSiGe material through Ti inserting layer |
Non-Patent Citations (1)
| Title |
|---|
| Formation and characterization of Ni/Al ohmic cntact on n+-type GeSn;Xu Zhang etc.;《Sollid-State Electronics》;20151017(第114期);178-181 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105551938A (en) | 2016-05-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6116705B2 (en) | Ge quantum dot growth method, Ge quantum dot composite material and application thereof | |
| CN108431925A (en) | Lossless reinforcing to the dopant diffusion of substrate | |
| CN108689432B (en) | Method for growing rhenium disulfide nanosheet on silicon substrate without oxidation layer | |
| CN103187283B (en) | Graphene field effect transistor and preparation method thereof | |
| CN103924213A (en) | Method for preparing molybdenum disulfide film for field emission device | |
| KR20070090849A (en) | Method for crystallization of amorphous silicon by joule heating | |
| CN108950683B (en) | High-mobility nitrogen-doped large single crystal graphene film and preparation method thereof | |
| CN109449308A (en) | A kind of graphene isolation gear film and preparation method | |
| CN102243991A (en) | Method for inducing amorphous silicon film with tin to be crystallized into polycrystalline silicon film | |
| CN105551938B (en) | A method of making NiGeSn material | |
| CN106711019B (en) | The method for preparing metal-semiconductor alloy using controlled imperfections graphene insert layer | |
| CN105977135B (en) | Growing method of gallium nitride based on stannic disulfide and magnetron sputtering aluminium nitride | |
| KR101084759B1 (en) | Method of forming graphene | |
| CN102689897B (en) | Method for preparing atomic scale graphene groove | |
| CN104409321B (en) | Method utilizing NiTi alloy for epitaxial growth NiSiGe material | |
| CN105244267B (en) | A kind of Ohmic contact method of silicon carbide PiN device | |
| CN103915348A (en) | Method for manufacturing graphene nanowire device | |
| CN103915326B (en) | The forming method and semiconductor devices of self-aligned metal silicate | |
| CN109994376A (en) | Ohmic contact structure formed in silicon carbide substrates and forming method thereof | |
| CN106702327B (en) | A kind of optimization method of ultra-thin lanthanum nickelate thin film electronic transport performance | |
| CN109830413B (en) | Preparation method of GaN micron rod array/graphene field emission cathode composite material | |
| CN100459046C (en) | Production of high-quality magnesium silicide thin-film on silicon wafer | |
| JP5943341B2 (en) | Method for producing single crystal GeSn-containing material | |
| TWI545217B (en) | Method of forming double-layer of carbon/metal and triple-layer of carbon/metal/carbon on a substrate and structure thereof | |
| CN104392915B (en) | Method for epitaxial growth of NiGe material by using NiTi alloy |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181127 |